WO2007129376A1 - Lentille électronique - Google Patents

Lentille électronique Download PDF

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Publication number
WO2007129376A1
WO2007129376A1 PCT/JP2006/308728 JP2006308728W WO2007129376A1 WO 2007129376 A1 WO2007129376 A1 WO 2007129376A1 JP 2006308728 W JP2006308728 W JP 2006308728W WO 2007129376 A1 WO2007129376 A1 WO 2007129376A1
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WO
WIPO (PCT)
Prior art keywords
lens
electron
electrode
correction
lens according
Prior art date
Application number
PCT/JP2006/308728
Other languages
English (en)
Japanese (ja)
Inventor
Keizo Yamada
Minoru Matsuzawa
Original Assignee
Topcon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topcon Corporation filed Critical Topcon Corporation
Priority to PCT/JP2006/308728 priority Critical patent/WO2007129376A1/fr
Publication of WO2007129376A1 publication Critical patent/WO2007129376A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/143—Permanent magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape

Definitions

  • the present invention relates to an electron lens used in a microscope or an evaluation apparatus using an electron beam.
  • an electron beam has a wavelength shorter than that of visible light
  • an electron microscope using an electron beam can observe and measure a finer object than when an optical microscope is used.
  • the resolution of an actual electron microscope can only reach a very rough resolution compared to the wavelength of the electron beam used. For example, even if an electron beam with a wavelength of 0.1 A or less is used, a resolution of about 20 A can be obtained.
  • the electron lens for controlling the electron beam to converge to a desired spot diameter has various large aberrations. For this reason, even if the electron beam is converged, it has a wide force ⁇ corresponding to the magnitude of the aberration, and the resolution becomes rougher than the value that the diffraction limit force is calculated.
  • an electrostatic lens cannot converge an electron beam having a very large spherical aberration compared to an electromagnetic lens to a diameter of several nanometers
  • an electromagnetic lens is generally used as an objective lens of an electron microscope. Have been used.
  • the operation of the conventional electrostatic lens will be described with reference to the sectional view of the conventional electrostatic lens shown in FIG. 19A and the plan view shown in FIG. 19B.
  • the electron beam EB19 is incident on the objective lens 190 with a large diameter.
  • the electron beam EB19 incident on the objective lens 190 is subjected to a force by an electric field formed by the electrode 192 applied with the voltage 195a and the electrode 193 applied with the voltage 195b, and is perpendicular to the equipotential surface 196. It passes through the electrostatic lens while changing the traveling direction, converges to the electron beam diameter 199, and reaches the sample surface (not shown).
  • the equipotential surface 196 has a spherical shape, it acts as a spherical electron lens. As a result, the spherical aberration of the electron lens increases, and the converged electron beam diameter 199 is large. Diameter.
  • One of the methods is a method using a multipole, which is a technique for correcting aberrations of an electron lens using a correction device having 12 poles (see, for example, Patent Document 1).
  • Another method is a technique for reducing chromatic aberration, and a method using a spectroscope is known. This is a method of reducing the energy dispersion of the electron beam and eliminating the chromatic aberration by separating the electron beam separately from each other.
  • the substrate current generated when an electron beam is irradiated onto a sample is measured, the fine structure of the sample is evaluated, and the semiconductor device manufacturing process is performed.
  • a semiconductor device measuring apparatus (EBSCOPE) to be managed is used (for example, see Patent Document 2).
  • EBSCOPE semiconductor device measuring apparatus
  • this apparatus unlike a conventional electron microscope, it is necessary to irradiate a sample with an electron beam having various beam shapes in which the electron beam is converged to the extreme or is forced.
  • it is necessary to measure the acceleration voltage of the electron beam in various ways.
  • an electromagnetic lens is used as the objective lens.
  • Patent Document 1 Japanese Patent Laid-Open No. 2005-302359
  • Patent Document 2 JP 2006-19761
  • the semiconductor device measuring apparatus as described above has recently been used in the mass production process in a semiconductor device manufacturing factory, and is used for fine structure inspection of semiconductor devices. It is increasingly used to determine process conditions. When considering such an application, the problem that the operation of the correction device is complicated and expensive is a very large practical obstacle.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a small electron lens having a small aberration and capable of changing characteristics without using a complicated correction device in a short time.
  • an electron lens according to the present invention includes a correction mechanism that corrects the aberration of an electrostatic lens.
  • the electron lens according to the present invention is characterized in that the correction mechanism is a correction electrode disposed in the vicinity of the objective lens.
  • the electron lens according to the present invention is characterized in that the correction electrode has a circular hole.
  • the electron lens according to the present invention is characterized in that the correction electrode has a hole having a shape other than a circle.
  • the electron lens according to the present invention is characterized in that the shape of the hole of the correction electrode is different from the shape of the objective lens.
  • the electron lens according to the present invention is characterized in that the correction mechanism is an electrode through which an electron formed of a conductive material can pass.
  • the electrode deforms the shape of the conductive material. It is characterized by being formed.
  • the electron lens according to the present invention is characterized in that the electrode has a Fresnel lens shape.
  • the electron lens according to the present invention is characterized in that a plurality of the electrodes in the shape of a Fresnel lens are arranged in the incident direction of the electron beam.
  • the electron beam scanning apparatus is characterized in that the electron beam scanning range is expanded using an electron lens.
  • the correction mechanism includes a correction electrode having a set of electrode forces facing a direction substantially perpendicular to the incident direction of the electron beam in the incident direction of the electron beam. It is a multistage lens arranged in a plurality of sets, and is characterized by comprising voltage application means for applying independent voltages to the correction electrodes.
  • the electron lens according to the present invention is characterized in that the arrangement angles of the correction electrodes of each set constituting the multistage lens are different.
  • the correction mechanism includes a plurality of correction electrodes having a circular hole and having a concave portion or a convex portion on the circumference of the hole in the incident direction of the electron beam.
  • This is a multi-stage lens superposed on each other, characterized in that it comprises voltage application means for applying independent voltages to the correction electrodes, and the correction electrodes are rotatable.
  • the electron lens according to the present invention has a plurality of focal points.
  • the electron lens according to the present invention is characterized in that the plurality of focal points exist at different positions.
  • the electron lens according to the present invention is characterized in that the plurality of focal points have a long focal length and a short focal length, respectively.
  • the electronic lens according to the present invention includes a correction mechanism that corrects the aberration of the magnetic lens.
  • the electronic lens according to the present invention includes a plurality of ring-shaped fixed magnets having different sizes. It is characterized by being arranged concentrically.
  • the electron lens according to the present invention is characterized in that the correction mechanism has a plurality of small magnets arranged in a plane.
  • the electronic lens according to the present invention further includes an electrostatic lens, and the magnetic lens and the electrostatic lens are arranged so that the incident directions of the electron beams are the same.
  • the electron lens according to the present invention is characterized in that the correction mechanism includes a plurality of holes formed in a support substrate and magnets in one or more of the holes.
  • the electron lens according to the present invention is characterized in that the correction mechanism is constituted by a magnet that can rewrite polarity, strength, or both.
  • the electron lens according to the present invention is characterized in that the polarity and / or strength of the magnet is rewritten using a magnetic head.
  • the electron lens according to the present invention is characterized in that the magnetic lens is configured by discretely changing the strength of the magnet.
  • the electron lens according to the present invention is characterized in that the magnetic lens is configured by continuously changing the strength of the magnet.
  • the electron beam apparatus according to the present invention is characterized by using the electron lens.
  • FIG. 1 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a first embodiment of the present invention.
  • FIG. 2 is a sectional view (A) and a plan view (B) of an electron lens according to a first modification of the first embodiment of the present invention.
  • FIG. 3 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a second modification of the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a third modification of the first embodiment of the present invention.
  • FIG. 5 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a fourth modification of the first embodiment of the present invention.
  • FIG. 6 is a cross-sectional view (A) and a plan view of an electron lens according to a fifth modification of the first embodiment of the present invention. It is a surface view (B).
  • FIG. 7 is a sectional view (A) and a plan view (B) of an electron lens according to a sixth modification of the first embodiment of the present invention.
  • FIG. 8 is a plan view (A) and a plan view separately displayed for each correction electrode in order to show the arrangement angle of each correction electrode of the electron lens according to the seventh modification of the first embodiment of the present invention. (B) and sectional view (C).
  • FIG. 9 is a cross-sectional view (A) and a plan view (B) of an electron lens according to an eighth modification of the first embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of an electron lens in which two electron Fresnel lenses of the present invention are stacked.
  • FIG. 11 is a cross-sectional view of an electron beam scanning device of an electron microscope using the electron lens shown in FIG.
  • FIG. 12 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a second embodiment of the present invention.
  • FIG. 13 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a first modification of the second embodiment of the present invention.
  • FIG. 14 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a second modification of the second embodiment of the present invention.
  • FIG. 15 is a plan view of an electron lens and a writing device according to a third modification of the second embodiment of the present invention.
  • FIG. 16 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a third embodiment of the present invention.
  • FIG. 17 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a first modification of the third embodiment of the present invention.
  • FIG. 18 is a cross-sectional view (A) and a plan view (B) of an electron lens according to a second modification of the third embodiment of the present invention.
  • FIG. 19 is a cross-sectional view (A) and a plan view (B) of a conventional electrostatic lens.
  • FIG. 1A shows a cross-sectional view of the electron lens according to the first embodiment of the present invention
  • FIG. 1B shows a plan view.
  • this electron lens is composed of an objective lens (main lens) 10, a correction electrode 11, an electrode 12, an electrode 13, an insulator 14, and a hole 18. Operates as an electric lens.
  • the electrode 12 is formed with an objective lens (main lens) 10 formed of a circular cavity.
  • a correction electrode 11 having a hole 18 made of a circular cavity smaller than the size of the objective lens (main lens) 10 is provided at the center of the electrode 13 so as to be electrically insulated from the electrode 13.
  • the correction electrode 11 can locally apply a potential in the vicinity of the objective lens (main lens) 10.
  • the objective lens (main lens) 10 and the correction electrode 11 are arranged in this order from the incident direction of the electron beam EB1.
  • An insulator 14 is sandwiched between the electrode 12 and the electrode 13, and the distance between the electrode 12 and the electrode 13 can be changed by changing the thickness of the insulator 14.
  • a correction electrode 11 is installed at the center of the objective lens (main lens) 10 and a hole 18 is formed at the center of the correction electrode 11.
  • the correction electrode 11 has a voltage 15a force electrode 12 has a voltage 15b force electrode 13 has a voltage 15 c is applied to each.
  • Each voltage may be any voltage.
  • the voltage of the correction electrode 11 (voltage 15a) and the voltage of the electrode 13 (voltage 15c) may be the same voltage as the electrode 12, the ground potential, or a floating state. .
  • a correction electrode 11 having a predetermined potential is disposed in the vicinity of the objective lens (main lens) 10. Therefore, the shape of the equipotential surface 16 near the objective lens (main lens) 10 is different from the equipotential surface shape of the objective lens (main lens) 10 alone due to the influence of the potential of the correction electrode 11. It becomes. That is, the potential of the correction electrode 11 affects the conventional equipotential surface formed by the electrodes 12 and 13 to which a voltage is applied, and changes the shape of the equipotential surface.
  • the shape of the equipotential surface 16 can be freely changed by adjusting the size, shape, position or potential of the correction electrode 11.
  • the shape of the equipotential surface 16 in this electron lens is deformed by the presence of the correction electrode 11, and the curvature of each part becomes smaller. ing.
  • the spherical aberration is smaller than that of the conventional electrostatic lens.
  • an electron lens in which the shape of the electron lens (that is, the equipotential surface shape) is changed to an aspheric shape other than the spherical shape can be realized.
  • the degree of the aspherical surface of the electron lens shape (equipotential surface shape) can be changed.
  • the shape of the electron lens (equipotential surface shape) is the spherical shape that the objective lens (main lens) 10 has alone, but the electrode distance is reduced from there.
  • an electron lens is obtained in which the potential of the correction electrode 11 is changed from an equipotential surface shape near the objective lens (main lens) 10 to an aspherical shape.
  • the electron beam EB1 incident on the electron lens is affected by the electric field generated by the correction electrode 11, the electrode 12, and the electrode 13, and changes the traveling direction perpendicular to the equipotential surface 16. While converging the beam diameter, the beam heads toward the hole 18 provided in the correction electrode 11. Only the electron beam EB1 passing through the hole 18 passes through the electron lens and reaches the surface of the sample (not shown).
  • the electron beam EB1 has smaller spherical aberration than the conventional equipotential surface 17. Since it converges under the influence of the aspheric equipotential surface 16, it converges to a smaller spot diameter than before.
  • this electron lens does not require a large current to flow unlike conventional electromagnetic lenses, it does not generate heat, and the electron lens characteristics can be changed instantaneously simply by changing the voltage applied to each electrode.
  • the force using the correction electrode 11 having the hole 18 at the center part is not necessarily required to have a hole. What is necessary is just to be able to arrange the electrode which can do things.
  • the position where the correction electrode 11 is provided may be on the objective lens (main lens) 10 or on both the bottom and top and bottom as described in the present embodiment.
  • the electron beam EB1 first passes through the hole 18 provided at the center of the correction electrode 11, so that The beam diameter is equal to or smaller than the diameter of the hole 18 and enters the objective lens (main lens) 10. Therefore, the electron beam EB1 passes only through the central region where the spherical aberration is small, among the equipotential surfaces 16 where the spherical aberration is small due to the aspherical shape, and the diameter of the electron beam EB1 is small. Can be converged more effectively and smaller.
  • the correction electrode 11 is easily contaminated because it is irradiated with the electron beam EB1. Therefore, a heating means such as a heater may be built in to heat the correction electrode 11.
  • FIG. 2A shows a cross-sectional view of an electron lens according to a first modification of the first embodiment of the present invention
  • FIG. 2B shows a plan view.
  • EBSCOPE semiconductor device measurement system
  • SEM general scanning electron microscopes
  • the aberration component is different from that of the circular cross-sectional shape. Therefore, it is necessary to correct the aberration in accordance with the cross-sectional shape of the electron beam.
  • the required electron beam cross-sectional shape is a star shape as an example. I will explain.
  • the present electron lens is an electrostatic lens having a structure in which the correction electrode 21 and the hole 28 are changed from the first embodiment.
  • a correction electrode 21 having a star-shaped hole 28 smaller than the size of the objective lens (main lens) 10 is provided in the center of the electrode 13 so as to be electrically insulated from the electrode 13.
  • the correction electrode 21 can locally apply a potential in the vicinity of the objective lens (main lens) 10.
  • the objective lens (main lens) 10 and the correction electrode 21 are arranged in this order from the incident direction of the electron beam EB2.
  • a correction electrode 21 is installed at the center of the objective lens (main lens) 10, and a star-shaped hole 28 is formed at the center.
  • a voltage is applied to each electrode as in the first embodiment.
  • This modification is characterized in that the shape of the hole 28 formed in the correction electrode 21 is a star shape.
  • the equipotential surface 26 forming the electron lens is affected by the star shape and is different from the conventional equipotential surface 17.
  • the electron beam EB2 that passes through the star-shaped tip of the hole 28 and the electron beam EB2 that passes through the central part differ in the strength of the electric field received by the electrons, and receive an aspheric lens action.
  • the trajectory of the electron beam EB2 changes. Therefore, the aberration of the electron lens can be controlled by controlling the hole size of the correction electrode 21, the size of the correction electrode, the distance between the correction electrode and the objective lens, the potential of the correction electrode, and the like.
  • the characteristics of the electron lens can be corrected accordingly.
  • a correction electrode in which a star-shaped hole is formed is shown as an example, but a correction electrode in which a V-shaped non-circular hole is formed can be used.
  • FIG. 3A shows a cross-sectional view of an electron lens according to a second modification of the first embodiment of the present invention
  • FIG. 3B shows a plan view.
  • a conventional electron microscope uses an electron beam having a circular cross-sectional shape.
  • the child lens also had a circular shape.
  • the semiconductor device measuring apparatus (EBSCOPE) described above uses electron beams having various cross-sectional shapes, a circular electron lens is not always appropriate.
  • This modification is characterized in that the shape of the objective lens is changed to a non-circular shape.
  • the shape of the correction electrode is also changed to a star shape similar to the first modification described above.
  • the present electron lens includes an objective lens (main lens) 30, a correction electrode 31, an electrode 32, an electrode 33, and a hole 38 from the first embodiment. It is an electrostatic lens with a modified structure.
  • An objective lens (main lens) 30 consisting of a star-shaped cavity is formed on the electrode 32, and the center of the electrode 33 is provided with a star-shaped hole 38 that is smaller than the size of the objective lens (main lens) 30
  • the electrode 31 is provided so as to be electrically insulated from the electrode 33.
  • the correction electrode 31 can locally apply a potential in the vicinity of the objective lens (main lens) 30.
  • the objective lens (main lens) 30 and the correction electrode 31 are arranged in this order from the incident direction of the electron beam EB3. Looking at the surface force of this electron lens, as shown in Fig. 3B, a correction electrode 31 is installed at the center of the star-shaped objective lens (main lens) 30, and a star-shaped hole 38 is formed at the center. !
  • a voltage is applied to each electrode as in the first embodiment.
  • an objective lens having a star shape or other shapes By using an objective lens having a star shape or other shapes in this way, it becomes possible to obtain an electron lens shape (shape of equipotential surface 36) different from a conventional circular objective lens.
  • the aberration of the electron lens can be corrected.
  • Only the objective lens may have a non-circular shape such as a star shape.
  • FIG. 4A shows a cross-sectional view of an electron lens according to a third modification of the first embodiment of the present invention
  • FIG. 4B shows a plan view.
  • This modification uses isoelectric to determine the lens characteristics of an electrostatic lens by using mesh electrodes.
  • the feature is that the shape of potential plane (potential surface) can be designed freely.
  • this electron lens is composed of an objective lens (main lens) 40, a mesh electrode 41, an electrode 42, and an electrode 43, and operates as an electrostatic lens.
  • An objective lens (main lens) 40 having a rectangular cavity force is formed on the electrode 42, and a mesh electrode 41 is electrically insulated from the electrode 42 inside the objective lens (main lens) 40. It is prepared.
  • the electrode 43 is also provided with a rectangular cavity having the same size as the objective lens (main lens) 40.
  • the mesh electrode 41 is formed of a conductive metal or a material in which nickel, copper, silver, gold, or the like is attached or coated on a fiber, and an externally applied voltage is generated on the surface of the mesh electrode 41. It can be made.
  • the mesh electrode 41 has a mesh structure and is an electrode that allows electrons to pass through the gaps between the electrodes.
  • the mesh electrode 41, the objective lens (main lens) 40, and the electrode 43 are arranged in this order from the incident direction of the electron beam EB4.
  • a mesh electrode 41 is placed inside a rectangular objective lens (main lens) 40, and the mesh electrode 41 is connected to the pad electrode 47 by a lead wire 48. Electrically connected. By applying a voltage through the pad electrode 47 and changing the applied voltage, the surface potential of the mesh electrode 41 can be changed.
  • each voltage is applied to the mesh electrode 41, and the voltage 45b is applied to the electrode 42 and the voltage 45a is applied to the electrode 43.
  • Each voltage may be an arbitrary voltage.
  • a conventional electrostatic lens is made of a circular planar electrode or cylinder having a space for allowing an electron beam to pass therethrough, and an electrostatic lens is formed by applying a voltage thereto. For this reason, the equipotential surface that the electrostatic lens can produce is a function only of the distance from the circular electrode, which causes aberrations in the electrostatic lens.
  • the shape of the equipotential surface 46 that functions as an electrostatic lens can be freely controlled by changing the shape of the mesh electrode 41, so that an electronic lens having an arbitrary characteristic that does not cause various aberrations is manufactured. It is possible to do.
  • the electron beam incident on the electron lens passes through the hole of the mesh and is converged while being influenced by the equipotential surface formed by the mesh electrode 41.
  • a voltage is applied only to the force mesh electrode 41, which shows an example in which a voltage is also applied to the electrode 42 and the electrode 43, and it can be operated as an electrostatic lens with corrected aberration.
  • the shape of the mesh electrode 41 is optimally designed to have the required electrostatic lens characteristics using electron beam simulation or the like.
  • the kamaboko type electrostatic lens shown in this modification forms a curved lens surface in the uniaxial direction (long side direction of the electrode 42), and can be used when the electron beam shape is changed only in the uniaxial direction. .
  • this is effective when the cross-sectional shape of the incident electron beam is distorted into an ellipse and converted into a true circle.
  • FIG. 5A shows a cross-sectional view of an electron lens according to a fourth modification of the first embodiment of the present invention
  • FIG. 5B shows a plan view.
  • the same reference numerals are given to the same elements as those shown in FIGS. 1 to 4 and the description thereof is omitted.
  • the mesh electrode is curved with respect to two XY axes orthogonal to each other.
  • the present electron lens includes an objective lens (main lens) 50, a mesh electrode 51, an electrode 52, and an electrode from the third modification of the first embodiment.
  • This is an electrostatic lens having a structure modified from 53.
  • the electrode 52 is formed with an objective lens (main lens) 50 formed of a circular cavity. Inside the objective lens (main lens) 50, a mesh electrode 51 is electrically insulated from the electrode 52. Is provided.
  • the electrode 53 is also provided with a circular cavity having the same size as the objective lens (main lens) 50.
  • the mesh electrode 51 is formed of the same material as that of the third modification of the first embodiment.
  • the mesh electrode 51 has a mesh structure and is an electrode through which electrons can pass through the gaps between the electrodes.
  • a mesh electrode 51 is installed on the top of a circular objective lens (main lens) 50, and the mesh electrode 51 is filtered by a lead wire 58.
  • the lead electrode 47 is electrically connected.
  • the large and small circular electrodes constituting the mesh electrode 51 are supported by the lead wires 58 to form a three-dimensional shape.
  • the shape of the equipotential surface 56 can be changed.
  • the mesh electrode 51 is obtained by performing a simulation or the like to obtain a shape that minimizes aberrations such as spherical aberration, and is manufactured according to the shape.
  • one mesh electrode may be sufficient for correction, or several mesh electrodes for correction with other shapes are stacked in the vertical direction. In some cases, it can be corrected.
  • it is necessary to obtain the optimum values by simulation and use them in combination with respect to the spacing between mesh electrodes, the size of the mesh electrodes, the curvature, the applied voltage, etc.
  • FIG. 6A shows a sectional view of an electron lens according to a fifth modification of the first embodiment of the present invention
  • FIG. 6B shows a plan view.
  • elements common to the components shown in FIGS. 1, 4, and 5 are given the same reference numerals, and descriptions thereof are omitted.
  • This embodiment is characterized in that an electron Fresnel lens is formed by bending a lens surface and planarizing the lens surface as is generally known for optical lenses.
  • a Fresnel lens has a structure in which a normal lens is disassembled into minute parts, and only the curved surface part of the lens is taken out, and the position is shifted and flattened so that the lens height is almost constant.
  • the present electronic lens is an electrostatic lens having a structure in which the mesh electrode 61 is changed from the fourth modification of the first embodiment.
  • the objective lens (main lens) 50 is provided inside the mesh electrode 611S electrode 52 and is electrically insulated! /
  • the mesh electrode 61 is formed of the same material as that of the third modification of the first embodiment.
  • the mesh electrode 61 has a mesh structure, and is an electrode through which electrons can pass through the gaps between the electrodes.
  • a mesh electrode 61 is installed inside a circular objective lens (main lens) 50, and the mesh electrode 61 is filtered by a lead wire 68.
  • the lead electrode 47 is electrically connected.
  • the large and small electrodes constituting the mesh electrode 61 are supported by lead wires 68.
  • the shape of the equipotential surface 66 can be changed.
  • the surface of the electron lens can be planarized in the same manner as the optical Fresnel lens, and spherical aberration can be reduced by adjusting the angle of each electrode.
  • the recent electron beam exposure technology it is possible to add an order of several nanometers, so that it is possible to manufacture an electron Fresnel lens that has such a lens step size and can be regarded as almost flat.
  • FIG. 7A is a cross-sectional view of an electron lens according to a sixth modification of the first embodiment of the present invention
  • FIG. 7B is a plan view.
  • elements common to the components shown in FIGS. 1, 4, and 5 are given the same reference numerals, and descriptions thereof are omitted.
  • This modification is characterized in that an independent voltage is applied to each electrode forming the electron lens.
  • this electron lens is an electrostatic lens having a structure in which the electrodes 71a, 71b, 71c, and 7 Id are changed from the fourth modification of the first embodiment. is there.
  • the objective lens (main lens) 50 circular electrodes 71a, 71b, 71c, 71d 1S electrodes 52 of different sizes are formed so as to be electrically insulated.
  • the electrodes 71a, 71b, 71c, 71d are made of the same material as in the third modification, and a voltage applied from the outside can be generated on the surfaces of the electrodes 71a, 71b, 71c, 71d.
  • circular electrodes 71a, 71b, 71c, 71d with different diameters are installed on the upper part of a circular objective lens (main lens) 50 as shown in FIG. 7B.
  • the lead electrodes are electrically connected to the pad electrodes 77a, 77b, 77c, and 77d, respectively.
  • the electrodes 71a, 71b, 71c, 71d are supported by an insulating support member 79 to form a three-dimensional shape.
  • the electrodes 71a, 71b, 71c, and 71d are respectively subjected to voltages 78a, 78b, 78c, and 78d with a force S.
  • Each voltage may be an arbitrary voltage.
  • the shape of the equipotential surface 76 is obtained.
  • the desired equipotential surface shape can be obtained by freely changing the shape, and as a result, the aberration can be reduced.
  • the equipotential surface shape can be changed instantaneously by changing the applied voltage. For example, when the acceleration voltage of the electron beam is changed, the aberration component changes. By changing the equipotential surface shape, aberration correction can be optimized dynamically.
  • various shapes such as a lattice shape and a dot shape can be used as the shape of the force electrode, which shows concentric electrodes as an example.
  • FIG. 8A is a plan view that is displayed separately for each correction electrode in order to show the arrangement angle of each correction electrode of the electron lens according to the seventh modification of the first embodiment of the present invention.
  • 8B is a plan view
  • Fig. 8C is a cross-sectional view.
  • correction electrode has a multi-stage configuration, and the arrangement angle of each correction electrode is changed little by little at each stage so that the voltage applied to each correction electrode can be freely changed.
  • FIG. 8A is a plan view that is displayed separately for each correction electrode in order to show the arrangement angle of each correction electrode.
  • the correction electrode 80b is offset by an angle of 8 lb
  • the correction electrode 80c is offset by an angle of 81c
  • the correction electrode 80d is relative to the position of the correction electrode 80a consisting of a pair of opposing metal electrode forces. Is shifted by an angle of 8 Id
  • the correction electrode 80e is shifted by an angle of 81 e
  • these five correction electrodes are sandwiched by insulators 82 as shown in the sectional view of FIG. .
  • the shape shown in the plan view of FIG. 8B is obtained.
  • Voltages 83a, 83b, 83c, 83d, and 83e are applied to the correction electrodes 80a, 80b, 80c, 80d, and 80e, respectively, and these voltages can be changed arbitrarily.
  • the voltage applied to the correction electrode at each stage is changed according to the magnitude of the asymmetric component of the electron lens, and control is performed so as to cancel the asymmetric component.
  • the axis of the ellipse has various rotation axes, but if the correction electrode shown in this modification is used, correction is performed in the direction along the axis of the ellipse.
  • the oval shape is true It can be converted to a circular shape.
  • the aberration can be corrected by applying another independent voltage to each set of the two correction electrodes shown in FIG.
  • a voltage is applied to only one of the five correction electrodes (correction electrode 80b)
  • only electrons near the correction electrode are affected, and the electron beam EB8 is slightly bent.
  • the energy of a part of the electron beam component finally converged to one point can be changed and the electron beam trajectory can be changed, so that aberration can be corrected.
  • FIG. 9A shows a cross-sectional view of an electron lens according to an eighth modification of the first embodiment of the present invention
  • FIG. 9B shows a plan view.
  • This modification is characterized in that an asymmetric shape is preliminarily arranged on the multistage correction electrodes constituting the electron lens.
  • this electron lens is provided with a correction electrode 91, a correction electrode 92, and a correction electrode 93 in this order also in the incident direction force of the electron beam EB9.
  • Each is a multistage lens provided with an insulator 94.
  • Each correction electrode can rotate independently and can be fixed at a desired position.
  • Each correction electrode is provided with an objective lens 90 formed of a circular cavity at the center, and the electron beam EB9 is converged under the influence of an electric field when passing through the cavity. An independent voltage is applied to each correction electrode 91, 92, 93 (not shown).
  • the correction electrode 91 has an asymmetric shape 95 in the vicinity of the objective lens 90.
  • the other correction electrodes 92 and 93 have a similar asymmetric shape (not shown).
  • the asymmetric shape 95 has a structure in which a part of the correction electrode is concave. Alternatively, a part of the correction electrode may be convex.
  • the equipotential surface generated in the electron lens becomes an aspheric surface due to the asymmetric shape 95 in each correction electrode, and the shape of the equipotential surface can be changed by rotating each correction electrode.
  • each of the correction electrodes 91, 92, and 93 is independently rotated little by little, and while measuring the aberration of the electron lens, the aberration is measured. Find the position of the correction electrode that minimizes. Since each correction electrode has an asymmetric component, the aberration of the electron lens can be set to the minimum depending on its rotation angle and combination. After the position where the aberration is minimum is determined, each correction electrode is fixed at a fixed position by using a not-shown cuff mechanism (position stop) attached to the electron lens.
  • Fig. 10 shows a cross-sectional view of an electron lens in which two electron Fresnel lenses are stacked.
  • the electron lens includes a first electron Fresnel lens 100, a second electron Fresnel lens 101, an electrode 102, an electrode 103, and an insulator 104.
  • a voltage 105a is applied to the electrode 102 and a voltage 105b is applied to the electrode 103, and each voltage can be arbitrarily changed.
  • Electron beam source 106 force The emitted electron beam EB10 is first incident on the first electron Fresnel lens 100 and converged, and then incident on the second electron Fresnel lens 101 and converged to the required spot diameter.
  • the characteristics of the electron lens can be changed by changing the voltage applied to the electrodes 102 and 103.
  • the angle of each electrode of the electron Fresnel lens can be freely changed as necessary.
  • An electronic Fresnel lens can reduce spherical aberration, but a single electronic Fresnel lens may not be able to correct all aberrations.
  • aberration correction can be performed more accurately by using a plurality of electron Fresnel lenses like the present electron lens.
  • aberration correction along the X axis of the electron beam can be performed by the first electron Fresnel lens 100
  • aberration correction along the Y axis of the electron beam can be performed by the second electron Fresnel lens 101.
  • the cross-sectional shape of the electron beam is not necessarily circular, so it is necessary to correct different aberrations for the X and Y axes. It is effective in such a case.
  • FIG. 11 shows a cross-sectional view of an electron beam scanning device of an electron microscope using the electron lens shown in FIG.
  • elements common to the components shown in FIG. 10 described above are assigned the same reference numerals, and descriptions thereof are omitted.
  • This electron beam scanning apparatus also includes an electron beam source 116, an extraction electrode 117, an aperture 118, a deflection electrode 119a, a deflection electrode 119b, and the electron lens and force shown in FIG.
  • the electron beam EB11 emitted from the electron beam source 116 is accelerated by the high voltage applied to the extraction electrode 117, the electron beam width is limited by the aperture 118, and the parallel beam is applied to the deflecting electrode. Led.
  • the deflection electrode 119a deflects the electron beam E Bl1 so as to move back and forth, and the deflection electrode 119b deflects the electron beam so as to move left and right.
  • the deflected electron beam EB11 is incident on an electron lens composed of the first Fresnel lens 100 and the second Fresnel lens 101.
  • the incident electron beam EB11 is focused on the surface of a sample (not shown) or a necessary place by an electron lens.
  • the strength of the electron lens is determined by the voltage applied to the electrodes 102 and 103. Electron Fresnel lenses have very small spherical aberration, so the electron beam maintains a constant focal length even when the electron beam is scanned over a wide area and converged using all regions of the electron Fresnel lens. Then, it is converged to exactly one point and translated on the sample surface. Therefore, in the SEM using the conventional electromagnetic lens, if the position of the sample was fixed, high-resolution observation was possible only in the range of a few microns. It becomes possible to observe a wide range with high resolution.
  • FIG. 12A shows a sectional view of an electron lens according to the second embodiment of the present invention
  • FIG. 12B shows a plan view.
  • the same reference numerals are given to the same elements as those shown in FIGS. 1, 4, and 5, and the description thereof is omitted.
  • This embodiment includes a plurality of spatially arranged permanent magnets or rewritable magnets, Alternatively, the magnetic lens is formed of an electromagnet.
  • this electron lens is a magnetic lens having a structure in which local magnets 121 are arranged instead of the mesh electrodes 51 of the fourth modification of the first embodiment.
  • the magnet 121 can be made of a material that can be easily magnetized by an external magnetic field to become a permanent magnet, such as rare earth magnets such as ferrite and neodymium samarium, as well as cobalt and nickel.
  • rare earth magnets such as ferrite and neodymium samarium
  • cobalt and nickel cobalt and nickel.
  • several very small electromagnets with a size of several microns or less may be created instead of permanent magnets.
  • a concentric local magnet 121 is installed inside a circular objective lens (main lens) 50, and each local magnet is supported by a support line 12. Supported by 9.
  • the present embodiment is characterized in that the magnetic lens is composed of a plurality of concentric magnets to correct aberrations that occur in the conventional magnetic lens.
  • the interaction between the magnetic field generated from the coil and the electron beam is determined by the distance from the coil. For this reason, only an electron lens having a magnetic field strength distribution that is uniquely determined by the distance from the coil and the shape of the magnetic circuit can be formed, and this is the cause of various aberrations due to spherical aberration. .
  • an electron lens having a magnetic field distribution 126 that is the sum of magnetic fields created by a plurality of magnets can be obtained.
  • FIG. 13A is a sectional view of an electron lens according to a first modification of the second embodiment of the present invention
  • FIG. 13B is a plan view.
  • elements common to the constituent elements shown in FIGS. 1, 4, and 5 are given the same reference numerals, and descriptions thereof are omitted.
  • This modification is characterized in that the electron lens is configured by spatially arranging magnets concentrically.
  • the present electronic lens is a magnetic lens having a structure in which the local magnet 131 is changed from the second embodiment.
  • a plurality of local magnets 131 are installed inside a circular objective lens (main lens) 50, and each is supported by a support line 139. ing.
  • the local magnet 131 may be a small fixed magnet, or may be manufactured using a magnetic film formed on a plastic film such as a magnetic tape. If such a material is used, a magnet can be formed at an arbitrary location.
  • the magnetic force, size, arrangement position, and polarity of the local magnet 131 are determined so as to realize an ideal magnetic field distribution using simulation or the like. In this modification, a magnetic field distribution having an arbitrary intensity and polarity can be realized, so that other aberrations than just spherical aberration can be corrected.
  • Each local magnet 131 may have a different magnetic force depending on an arrangement position where the same magnetic force may be sufficient.
  • a voltage may be applied to the electrodes 52 and 53.
  • the electron beam is affected by both the magnetic field and the electric field, and more advanced correction can be performed.
  • FIG. 14A is a sectional view of an electron lens according to a second modification of the second embodiment of the present invention
  • FIG. 14B is a plan view.
  • a magnetic lens in which magnets are spatially arranged is shown.
  • the lens acts as a result of the generated magnetic field and converges or diverges.
  • the aberration can be corrected by changing the arrangement position, strength, and polarity of the magnet 142.
  • various materials such as metal, ceramic, or organic material can be used as the support substrate 140.
  • the shape of the hole 141 shown in FIG. 14 may be a circular force square, a polyhedron, or a mesh.
  • FIG. 15 shows a plan view of an electron lens and a writing device according to a third modification of the second embodiment of the present invention.
  • This modification shows a magnetic lens in which micro magnets are locally arranged.
  • this electron lens is composed of a circular magnet 151, and a cavity provided in the center serves as the objective lens 150.
  • the circular magnet 151 includes a plurality of micro magnets 152 that are locally magnetized to n poles and a plurality of micro magnets 153 that are magnetized to s poles.
  • a writing control device 156 and a magnetic head 157 used for writing the magnet are provided, and writing is performed based on the digital signal 155.
  • the signal 154 is used as an example of the digital signal 155
  • the n pole and the s pole are alternately written to the same magnitude with the same intensity, and the magnet 151 shown in the figure is obtained.
  • the micromagnet When the size is in millimeters, the micromagnet can be mechanically arranged using a robot such as a chip mounter. However, if the size is smaller than that, it is difficult to mechanically arrange the micromagnet. Therefore, in order to place a magnet with a size of a micron or smaller, prepare a material in which a magnetic material is formed in a thin film as described above, and use a magnetic head 157 for the material. Write the information.
  • the technology used for the magnetic disk can be applied to the magnetic head 157, and an electromagnetic magnetic head or a phase change magnetic writing method using a laser may be used.
  • a write current corresponding to magnet arrangement information that realizes a magnetic field distribution necessary to realize desired electron lens characteristics is magnetically generated. This is done by flowing through the head 157.
  • a magnetic material that can be used for writing a magnetic material generally used in a magnetic disk or a magnetic tape can be used, and a magnet having a size of a submicron unit is provided at an arbitrary interval. It becomes possible to arrange.
  • the direction of magnetizing can be selected from an in-plane direction or an arbitrary direction.
  • As a method of changing the strength of the magnetic force it can be performed discretely (digitally) by changing the ratio of magnets having a certain polarity or magnetic force arranged in a unit area.
  • the magnetic force of each magnet is made equal, and a magnetic lens that adjusts the strength of the magnetic field discretely (digitally) according to the number of magnets or the surface density Hope to do.
  • FIG. 15 only an example of forming a magnet on a circular material such as a magnetic disk is shown, but a magnet may be written on a two-dimensional plane.
  • an electron microscope device or a semiconductor measurement device (EBSCOPE)
  • FIG. 16A shows a cross-sectional view of an electron lens according to the third embodiment of the present invention
  • FIG. 16B shows a plan view.
  • the same reference numerals are given to the same elements as those shown in FIGS. 1, 4, and 5, and the description thereof is omitted.
  • an example is shown in which an equipotential surface is arbitrarily designed by devising the shape of the mesh electrode to constitute an electron lens having two focal points.
  • the conventional electron lens has only one focal point, but in this embodiment, two or more focal points can be freely obtained.
  • an electronic lens having a compound eye structure simulating the eyes of a dragonfly can be constructed.
  • the present electron lens is a fourth modification of the first embodiment.
  • the electrostatic lens has a structure in which the mesh electrode 161 is changed.
  • a mesh electrode 161 is formed in the objective lens (main lens) 50 so as to be electrically insulated from the electrode 52.
  • the mesh electrode 161 has two convex portions.
  • the mesh electrode 161 is formed of the same material as that of the third modification of the first embodiment, and a voltage to which an external force is applied can be generated on the surface of the mesh electrode 161.
  • a mesh electrode 161 is installed inside a circular objective lens (main lens) 50, and the mesh electrode 161 is padded by a lead wire 168.
  • the electrode 47 is electrically connected.
  • the large and small circular electrodes constituting the mesh electrode 161 are supported by the lead wires 168 to form a three-dimensional shape.
  • a measuring apparatus using an electron beam such as SEM has one electron beam source as shown in Fig. 8, and the generated electron beam is converged to a diameter of several nm. SEM images are obtained by irradiating the sample surface and scanning it two-dimensionally in the XY direction.
  • the electron beam measuring device since the electron beam source has a lifetime, and it is often necessary to replace the electron beam source, the electron beam measuring device must be brought down during the replacement, and measurement cannot be performed.
  • the electron beams EB16a and EB16b have the same Cf standing at the position where the force incident on the electron lens from different positions converges. Furthermore, by changing the shape of the convex portion of the mesh electrode 161, it is possible to change the shape of the equipotential surface and correct the aberration.
  • a separate electron beam source is installed at the focal point position, operated one by one, and when the operating electron beam source is broken, it is switched to the next electron beam source and used in order. This makes it possible to always use the measuring device regardless of the lifetime of the electron beam source.
  • FIG. 17A is a sectional view of an electron lens according to a first modification of the third embodiment of the present invention
  • FIG. 17B is a plan view.
  • elements common to the constituent elements shown in FIGS. 1, 4, and 5 are given the same reference numerals, and descriptions thereof are omitted.
  • This modification is characterized in that an electron lens having a plurality of focal lengths is realized in one electron lens.
  • this electron lens is an electrostatic lens having a structure in which the mesh electrode 171 is changed from the third embodiment.
  • a mesh electrode 171 is formed in the objective lens (main lens) 50 so as to be electrically insulated from the electrode 52.
  • the mesh electrode 171 has three convex portions.
  • the mesh electrode 171 is formed of the same material as that of the third modification of the first embodiment, and a voltage to which an external force is applied can be generated on the surface of the mesh electrode 171.
  • a mesh electrode 171 is installed inside a circular objective lens (main lens) 50, and the mesh electrode 171 is padded by a lead wire 178.
  • the electrode 47 is electrically connected.
  • the large and small circular electrodes constituting the mesh electrode 171 are supported by the lead wires 178 to form a three-dimensional shape.
  • the electron beam EB 17a incident on the center of the electron lens has a focal length that converges on the sample surface, not shown.
  • the electron beams EB17b and EB17c incident on the outer periphery of the electron lens have a longer focal length than the focal length of the electron beam EB17a.
  • the electron beam is controlled so as to be focused and converged at the central portion of the sample, and is controlled so as not to be converged by shifting the focus at the peripheral portion.
  • the shape of the convex portion at the center of the mesh electrode 171 the shape of the equipotential surface can be changed, and the aberration of the electron beam converged on the center of the sample can be corrected.
  • FIG. 18A is a cross-sectional view of an electron lens according to a second modification of the third embodiment of the present invention
  • FIG. 18B is a plan view.
  • this electron lens has the same structure as that of the first modification of the third embodiment shown in FIG. The difference is that the size of the outer shape is smaller than the size of the outer shape of the electrode 183.
  • a pad electrode 187a is provided above the electrode 182 and a pad electrode 187b is provided above the electrode 183 so as to be electrically connected to each electrode.
  • a pad electrode 187c electrically connected to the mesh electrode 181 is provided on the electrode 182 so as to be electrically insulated from the electrode 182.
  • an electron lens having characteristics required for an evaluation apparatus using an electron beam such as a semiconductor device measurement apparatus (EBSCOPE) can be obtained.
  • EBSCOPE semiconductor device measurement apparatus
  • the electrostatic lens is small, but the aberration is large! /. Therefore, the electrostatic lens according to the present invention has a small aberration because the electrostatic lens of the present invention has a small aberration. It can be used as an objective lens for such applications. Therefore, it is possible to produce SEMs and process evaluation devices that are smaller and have higher resolution observation than before.
  • the electron beam column can also be reduced in size, and it is a very strong electron beam column that is not affected by external noise (especially vibration, electromagnetic waves, geomagnetism). Can be obtained.
  • an electron lens with negative aberrations that not only yields an electron lens with no aberrations, or an electron lens that can change aberrations and lens characteristics with respect to the time axis. It is possible to get.
  • the method of the present invention can be applied to all electron lenses regardless of the power use described as an example of the objective lens that needs to consider the aberration most.
  • various electrode and magnet arrangement methods other than those described in the embodiment and changes in the polarity of the magnets also have the effect of controlling aberrations. It is also effective to use a combination of each electrostatic lens and magnetic lens described in the present embodiment. In manufacturing lenses, it is important to use the latest micromachining technology to further reduce aberrations.
  • the present invention is applied to an electron lens used in a microscope or an evaluation apparatus using an electron beam. It is preferable.

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Abstract

L'invention concerne une lentille électronique de petite taille, ayant une petite aberration, destinée à être utilisée dans un microscope et un dispositif d'évaluation utilisant un faisceau électronique. La lentille électronique est caractérisée en ce que sa caractéristique peut être modifiée dans un bref laps de temps sans employer un dispositif de correction compliqué. Dans la lentille électronique, une électrode de correction (11) est placée à proximité des lentilles d'objectif (12, 13), en tant que lentilles électrostatiques, pour corriger l'aberration. Dans une variante, un mécanisme de correction, formé par un aimant, est placé à proximité des lentilles d'objectif, en tant que lentilles magnétiques, pour corriger l'aberration.
PCT/JP2006/308728 2006-04-26 2006-04-26 Lentille électronique WO2007129376A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009020208A1 (fr) * 2007-08-09 2009-02-12 Kyoto University Lentille d'agencement de type multipolaire radiale, et dispositif de système optique à particules chargées utilisant la lentille
EP2124243A2 (fr) 2008-05-20 2009-11-25 Samsung Electronics Co., Ltd. Électrode de mise au point d'un faisceau à électrons et pistolet à électrons utilisant une telle électrode
WO2014191370A1 (fr) * 2013-05-31 2014-12-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Lentille electrostatique a membrane semiconductrice dielectrique
US20160189916A1 (en) * 2014-12-17 2016-06-30 Applied Materials Israel Ltd. Scanning charged particle beam device having an aberration correction aperture and method of operating thereof
EP3267464A4 (fr) * 2015-04-27 2018-12-26 National University Corporation Nagoya University Dispositif de correction d'aberration sphérique pour lentille électromagnétique de faisceau de particules chargées

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JP2001052998A (ja) * 1999-06-03 2001-02-23 Advantest Corp 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001052998A (ja) * 1999-06-03 2001-02-23 Advantest Corp 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009020208A1 (fr) * 2007-08-09 2009-02-12 Kyoto University Lentille d'agencement de type multipolaire radiale, et dispositif de système optique à particules chargées utilisant la lentille
EP2124243A2 (fr) 2008-05-20 2009-11-25 Samsung Electronics Co., Ltd. Électrode de mise au point d'un faisceau à électrons et pistolet à électrons utilisant une telle électrode
JP2009283434A (ja) * 2008-05-20 2009-12-03 Samsung Electronics Co Ltd 電子ビーム集束電極及びこれを用いた電子銃、並びに四角形の断面を有する電子ビームの拡散現象を低減させる方法
EP2124243A3 (fr) * 2008-05-20 2012-09-26 Samsung Electronics Co., Ltd. Électrode de mise au point d'un faisceau à électrons et pistolet à électrons utilisant une telle électrode
KR101420244B1 (ko) * 2008-05-20 2014-07-21 재단법인서울대학교산학협력재단 전자빔 집속 전극 및 이를 이용한 전자총
US8912505B2 (en) 2008-05-20 2014-12-16 Samsung Electronics Co., Ltd. Electron beam focusing electrode and electron gun using the same
WO2014191370A1 (fr) * 2013-05-31 2014-12-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Lentille electrostatique a membrane semiconductrice dielectrique
FR3006499A1 (fr) * 2013-05-31 2014-12-05 Commissariat Energie Atomique Lentille electrostatique a membrane isolante ou semiconductrice
US9934934B2 (en) 2013-05-31 2018-04-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electrostatic lens having a dielectric semiconducting membrane
US20160189916A1 (en) * 2014-12-17 2016-06-30 Applied Materials Israel Ltd. Scanning charged particle beam device having an aberration correction aperture and method of operating thereof
EP3267464A4 (fr) * 2015-04-27 2018-12-26 National University Corporation Nagoya University Dispositif de correction d'aberration sphérique pour lentille électromagnétique de faisceau de particules chargées

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