Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
  • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
  • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
  • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
  • B06B1/0292—Electrostatic transducers, e.g. electret-type
• • A—HUMAN NECESSITIES
  • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
  • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
  • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
  • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
  • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
• • A—HUMAN NECESSITIES
  • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
  • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
  • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
  • A61B8/12—Diagnosis using ultrasonic, sonic or infrasonic waves in body cavities or body tracts, e.g. by using catheters
• • A—HUMAN NECESSITIES
  • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
  • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
  • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
  • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
  • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
  • A61B8/4488—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer the transducer being a phased array

Definitions

• the present invention relates to a cMUT (Mic croma nd uid ita r a s n ic tran s d c cer: an ultrasonic wave transducer using a micromachine process).
• An ultrasonic diagnostic method in which an ultrasonic wave is irradiated toward the inner wall of a body cavity and a state inside the body is imaged and diagnosed from the echo signal is widely used.
• One of the equipment used for this ultrasonic diagnostic method is an ultrasonic endoscope scope.
• An ultrasonic endoscope scope has an ultrasonic probe attached to the distal end of a insertion portion to be inserted into a body cavity, and this ultrasonic probe converts an electrical signal into an ultrasonic wave and irradiates it into the body cavity. It also receives ultrasonic waves reflected in the body cavity and converts them into electrical signals.
• FIG. 1A shows a cross-sectional view of a portion of a conventional cMU T array.
• Figure 1 A shows a cross-sectional view of a portion of a conventional cMU T array.
• the cMUT array is composed of two vibrator elements 210 with a groove (trench) 209 therebetween.
• the transducer element is the smallest unit for inputting and outputting drive control signals.
• This vibrator element is composed of a plurality of vibrator cells 208.
• the vibrator element 210 includes a silicon substrate 201, a lower electrode 202, a membrane support 203, a cavity (cavity) 204, and a membrane 206.
• a unit including one cavity 204 is called a resonator cell 208.
• FIG. 1B is an enlarged view of the transducer cell 208.
• a lower electrode 202 is formed on a silicon substrate 201, and a membrane 206 is supported by a membrane support 203.
• An upper electrode 205 is formed on the membrane 206.
• the periphery of the membrane 206 is supported by the membrane support 203.
• a groove 209 is provided to suppress crosstalk between transducer elements in which a plurality of cMUT transducer cells are connected. Further, an ultrasonic attenuator is formed in the groove 209. In addition, the sacrificial layer removal hole is shielded after the sacrificial layer is removed and the cavity is formed.
• Patent Document 1 Patent Document 10
• Non-Patent Document 1 techniques related to the present invention.
• FIG 2 shows the bending vibration of a conventional cMUT membrane.
• the membrane 206 of each transducer cell 208 is continuously arranged in the plane direction (two-dimensional direction).
• the maximum bending displacement 194 immediately after the occurrence of the dense wave and the sparse wave
• the bending vibration represented by the maximum bending displacement 21 5 later is performed.
• the membrane 206 is fixed and supported at the periphery of the membrane by the membrane support portion 203. Therefore, a part of the bending vibration of the membrane 206 is converted into a longitudinal wave, propagates as a longitudinal wave to the semiconductor substrate 201 through the membrane support part 203, and a part of the ultrasonic vibration is dissipated (in FIG. 2, the support part Propagation leakage Longitudinal wave 21 3) This reduces the output sound pressure of ultrasonic waves.
• Patent Document 1 JP-A-7_274287
• Patent document 2 JP-A-8_274573
• Patent Document 3 Japanese Patent Application Laid-Open No. 2004_274756
• Patent Document 4 US Pat. No. 6,262,946
• Patent Document 5 US Pat. No. 6,328,696
• Patent Document 6 US Pat. No. 6328697
• Patent Document 7 Special Publication 2004- 50331 3
• Patent Document 8 Japanese Unexamined Patent Application Publication No. 2004_350705
• Patent Document 9 Japanese Unexamined Patent Application Publication No. 2004_350704
• Patent Document 10 Japanese Unexamined Patent Application Publication No. 2004-350705
• Non-Patent Document 1 Satoshi Ito, “Sound of Acoustical Engineering (Volume 1)”, 1st 2nd edition, Corona Inc., 1 February 1980, P 1 49—P 1 52
• An ultrasonic transducer includes a plurality of ultrasonic transducer cells each including a substrate on which a lower electrode is formed, and a membrane that is provided at a distance from the substrate and on which an upper electrode is formed. And when a voltage is applied between the lower electrode and the upper electrode, the membrane vibrates to generate ultrasonic waves.
• a plurality of cells each including a substrate on which a lower electrode is formed and a membrane provided on a position separated from the substrate and on which an upper electrode is formed, the lower electrode and the upper electrode
• the method of manufacturing an ultrasonic transducer using a micromachine process in which a membrane is vibrated to generate ultrasonic waves when a voltage is applied between them is a basic vibration obtained when the membrane is freely vibrated.
• a support portion for supporting the membrane is provided along the node.
• FIG. 1A shows a cross-sectional view of a conventional cMUT array.
• FIG. 1B A cross-sectional view of a conventional cMUT transducer cell.
• FIG. 3 is a conceptual diagram of a cMUT transducer cell according to the present invention.
• FIG. 4 is a cross-sectional view of the capacitive ultrasonic transducer in the first embodiment.
• FIG. 5 is a sectional view of a capacitive ultrasonic transducer in a second embodiment.
• FIG. 6 is a top view of the capacitive ultrasonic transducer 11 in FIG.
• FIG. 7 is a cross-sectional view of the A a _A b portion of FIG.
• FIG. 8 is a cross-sectional view of B a _B b portion of FIG.
• FIG. 9 shows a top view (modified example) of the capacitive ultrasonic transducer in the second embodiment.
• FIG. 10 is a cross-sectional view of a capacitive ultrasonic transducer in a third embodiment.
• FIG. 11 shows a cross-sectional view of a capacitive ultrasonic transducer in the fourth embodiment.
• FIG. 12 is a cross-sectional view (modified example) of the capacitive ultrasonic transducer in the fourth embodiment.
• FIG. 13 shows a cross-sectional view of a capacitive ultrasonic transducer in a fifth embodiment.
• FIG. 14 is a cross-sectional view of a capacitive ultrasonic transducer in the fifth embodiment (modified example) It is.
• FIG. 15 is a sectional view of a capacitive ultrasonic transducer in a sixth embodiment.
• FIG. 16A is a top view of a lower electrode in a sixth embodiment.
• FIG. 16B shows the state of displacement of the membrane 15 that vibrates when a voltage is applied to the lower electrode 80 in the sixth embodiment.
• FIG. 17A is a top view of a conventional lower electrode for comparison with the lower electrode in the sixth embodiment.
• FIG. 17B shows a state of displacement of the upper electrode 15 that vibrates when a voltage is applied to the lower electrode 90 in the past for comparison with the lower electrode in the sixth embodiment.
• FIG. 18A shows a manufacturing process (No. 1) of a capacitive ultrasonic transducer in the seventh embodiment.
• FIG. 18B shows a manufacturing process (No. 2) of the capacitive ultrasonic transducer in the seventh embodiment.
• the dissipated vibration waves 2 1 2 and 2 1 3 may act as crosstalk with respect to the ultrasonic waves transmitted and received from adjacent resonator cells.
• Crosstalk between transducer cells that make up such transducer elements causes variations in sound source sound pressure and vibration phase between transducer elements, so when performing phased array scanning, ultrasonic diagnosis is performed. Noise is generated in the image, causing deterioration of the ultrasound diagnostic image.
• Resonance sharpness Q corresponds to the high Q vibration state when vibration is not lost and vibration is generated efficiently and continuously in a specific region (time axis). In other words, when the dissipation of vibration is reduced, Q increases accordingly. Vibration amplitude at this resonance frequency The vibration amplitude at the non-resonant frequency is Q times, the membrane's vibration aperture is reduced, and Q is increased to increase the vibration amplitude, resulting in a large ultrasonic transmission sound pressure. Become.
• the present invention provides an ultrasonic transducer with improved membrane vibration efficiency and improved ultrasonic transmission efficiency.
• the cMUT according to the present invention is formed on a semiconductor substrate.
• a unit in which a lower electrode for applying a drive control signal and a membrane including an upper electrode serving as a ground electrode are opposed to each other with a cavity therebetween is referred to as a cMUT vibrator cell.
• An array group in which a large number of cMUT transducer cells are arranged and used as a minimum unit for inputting and outputting drive control signals is called a cMUT transducer element.
• An array-type transducer is an array of many cM U T transducer elements.
• the membrane composing the cMUT resonator cell has a structure in which the membrane of each cell is divided around the entire circumference between adjacent cMUT resonator cells and is independent from the membrane of the adjacent cell. . Furthermore, the support position of the membrane support section that supports the membrane is provided along the position that becomes the node when the membrane vibrates freely.
• FIG. 3 is a conceptual diagram of a cMUT transducer cell according to the present invention.
• Fig. 3 (A) shows a cross-sectional view and Fig. 3 (A) shows a perspective view.
• the cMUT transducer cell 1 is composed of a membrane 3 and a membrane support 2 in the figure.
• the length of the membrane 3 having a diameter 8 is represented by L 2 and the distance between the membrane support parts (nodal diameter 8).
• the peripheral edge of the membrane 3 indicates a donut-shaped region excluding the circle specified by the space between the membrane 3 and the membrane support (nodal circle diameter 8) (hereinafter referred to as the membrane node outer portion 7).
• the membrane support 2 is supported in a concentric shape smaller than the diameter of the membrane 3 (a circle whose diameter is the nodal circle size 8). This support position is not restricted by bending vibration of the membrane 3, but when it is vibrated only by the membrane 3, that is, when it is vibrated freely without fixing the end of the membrane, the membrane 3 Bending vibration occurs as shown by the maximum bending displacement 5 immediately after birth and the maximum bending displacement 6 immediately after the occurrence of sparse waves, resulting in node 4 that does not vibrate at all times.
• Section 4 is a portion that is not displaced by the fundamental vibration of the membrane 3.
• Membrane support 2 is provided along the position where this section 4 occurs.
• this membrane support portion 2 is provided along the position of 0.6 78 8 a from the center of the circle of the membrane 3 in the case of fundamental vibration (Non-patent Document 1).
• Non-Patent Document 1 when the edge of a circular plate is in a free state, a diameter nodal line arranged at equal intervals with a concentric circular nodal line is generated upon vibration.
• POISSON was solved in 1 8 2 9, and its lowest order vibration produced a nodal line at 0.6 7 8 a (a: disk radius). Produces nodal lines at 0.39 2 3 and 0.84 2a.
• FIG. 4 shows a cross-sectional view of the capacitive ultrasonic transducer in the present embodiment.
• Capacitive ultrasonic transducer 1 1 consists of a surface oxidized silicon (Si) substrate 1 2, membrane support 1 3, lower electrode 1 4, upper electrode 1 5, membrane 1 6, cavity (gap) ) 1 7, Ground wire wiring 1 8, Signal line wiring hole 19, Signal line substrate through wiring 20, Signal line electrode pad 2 1, Ground electrode pad 2 2
• each capacitive ultrasonic transducer cell is composed of units surrounded by a broken line 25.
• the capacitive ultrasonic transducer 11 is composed of a plurality of capacitive ultrasonic transducer cells 25. Note that this unit of capacitive supersonic Although not shown in the figure, the wave transducer cell 25 is also provided with ground line wiring 1 8, signal line wiring hole 1 9, signal line substrate through wiring 2 0, and signal line electrode pad 2 1.
• the membrane 16 is fixed at the position where the section 4 occurs by the membrane support portion 13.
• the supporting position is set at a position 0.66 8 a from the center of the circle of the membrane 16 when the radius of the membrane 16 is a (a: arbitrary numerical value).
• An upper electrode 15 is disposed on the upper surface of the membrane 16.
• the membrane support portion 13 is provided on the upper surface of the silicon substrate 12.
• a lower electrode 14 is disposed on the surface of the surface-oxidized silicon substrate 12 between the membrane support portions 13.
• the silicon substrate 12 is provided with a signal line wiring hole 19, and a signal line substrate through wiring 20 whose inner wall surface is insulated is provided therein.
• the signal line substrate through wiring 20 and the lower electrode 14 are electrically connected.
• the other end of the signal line substrate through wiring 20 is electrically connected to the signal line electrode pad 21 provided on the silicon substrate 12 whose surface is coated with an insulating film.
• the signal line electrode pad 21 becomes a terminal on the lower surface side of the semiconductor substrate 12 with respect to the lower electrode 14.
• the ground electrode pad 2 2 is an electrode pad for connecting the upper electrode 15 to GND, and electrically connects the upper electrode 15 to the bottom surface of the silicon substrate 16 .
• the cavity (void portion) 17 is a space surrounded by the membrane 16 (including the membrane support portion 13) and the silicon substrate 12 (lower electrode 14).
• the resistance between the upper electrode 15 and the ground electrode pad 22 can be reduced as much as possible.
• the membranes 16 of the adjacent cells 25 are not connected to each other, and a gap (gap) 23 is provided.
• the membrane support 1 3 and the collar of the membrane men There is a space (space between adjacent cells 2 4) surrounded by the outer side of the plain node 7).
• the membrane of each cell is not connected to the membrane of the adjacent cell, the dissipation of vibration in the surface direction (adjacent membrane direction) is eliminated.
• the membrane is supported at the position of node 4 where displacement due to fundamental vibration does not occur, the vibration can be prevented from leaking as a longitudinal wave to the semiconductor substrate.
• FIG. 5 shows a cross-sectional view of the capacitive ultrasonic transducer in the present embodiment.
• the portion different from Fig. 4 is not provided with a gap between the membranes of each cell, but is composed of a continuous membrane 16 and a plurality of grooves (groove row 3 in the portion corresponding to the gap in Fig. 4). 0) is provided.
• the ground line wiring 18, the signal line wiring hole 19, the signal line substrate through wiring 20, the signal line electrode pad 21, and the ground electrode pad 22 are omitted.
• the membrane 16 has a thickness of 0.6 7 8 a from the center of the circle of the membrane 16 when the radius of the membrane 16 is a. Supported in position. However, the position of the knot may move according to the number and depth of the grooves. At this time, it is necessary to determine the position of the knot experimentally.
• FIG. 6 shows a top view of the capacitive ultrasonic transducer 11 of FIG. In the capacitive ultrasonic transducer 11, a plurality of membranes 16 that are identified by providing the groove array 30 in a circular shape (annular groove group) are arranged.
• the portion indicated by reference numeral 31 is the groove row of the portion closest to the adjacent cell (hereinafter referred to as the adjacent cell nearest groove portion 31).
• the part indicated by reference numeral 32 is an area sandwiched between three adjacent cells. As explained in Fig. 7, this region is a part where the thickness of the membrane has changed discontinuously, so the acoustic impedance becomes discontinuous. Hereinafter, this region is referred to as an acoustic impedance non-achievable region 32 between adjacent cells.
• a circle 34 shown by a dotted line is a portion corresponding to the portion supported by the membrane support portion 13 and is shown for convenience of explanation, but is originally provided on the lower surface of the membrane. It cannot be seen from above.
• FIG. 7 is a cross-sectional view of the A a _A b portion of FIG.
• the gap formed between adjacent cells is referred to as the gap 41 1 between the adjacent acoustic impedance discontinuous regions.
• the adjacent cell nearest node groove row portion 31 corresponding to the portion 4 1 is composed of a combination of a flat surface and a plurality of groove row portions 30. The thickness changes discontinuously. Therefore, the membrane 16 corresponding to this part has a discontinuous acoustic impedance.
• FIG. 8 is a cross-sectional view of the portion B a _B b in FIG.
• the thickness of the membrane is thinner than the other portions (thin layer portion 3 3).
• a through hole 42 is provided in a portion corresponding to the position of the thin layer portion 33.
• the through hole 42 is provided for air circulation. Without this through hole 42, the gap 41 under the acoustic impedance discontinuity region between adjacent cells has a sealed structure, has a damping effect, and reduces the resonance sharpness Q.
• the thin layer portion 3 3 vibrates in synchronization with the vibration of the membrane 16; When the gap 4 1 has a sealed structure, damping occurs for the vibration of the thin layer 3 3. This damping causes a decrease in membrane vibration efficiency.
• FIG. 9 shows a modification of FIG.
• the shape seen from the upper surface formed by the groove array 30 in FIG. 6 is changed from a circular shape to a hexagonal shape, and a hole 43 having a hole in the middle of the membrane film is formed at the apex portion.
• the provided structure is shown.
• This hole 43 is a hole that opens to the middle of the thickness of the membrane 16.
• the holes 43 are provided to alleviate stress concentration.
• the shape of the groove is not limited to a hexagonal shape, and may be another polygonal shape.
• the annular groove group between the ultrasonic transducer cells as the acoustic isolation means, the bending (plate wave) excited by the membrane is confined in the cell, Since it becomes difficult to propagate to the membrane of the adjacent cell, the dissipation of vibration in the surface direction can be suppressed. In addition, since there is no gap between the membranes, it is possible to suppress variations in ultrasonic output caused by liquid intrusion from the ultrasonic transmission / reception surface side.
• FIG. 10 shows a cross-sectional view of the capacitive ultrasonic transducer in this embodiment.
• FIG. 10 is a diagram in which the upper surface of the membrane 16 and the upper electrode 15 of the capacitive ultrasonic transducer of FIG. 4 is coated with a protective film 50.
• protective film 50 for example, parylene, polyimide, Teflon (registered trademark), or Cytop can be used.
• This protective film may be a film composed of nanometer-size particles (nano-coating film).
• protective film NANO-X, product name:
• X-protect DS 3 0 1 0 is composed of silicon (S i), zirconium (Z r), titanium (T i) inorganic components, oxygen (O), and other organic components (polymer compounds) It has a mesh structure.
• This structure can be obtained by hydrolyzing a metal alkoxide compound such as silicon (S i), zirconium (Z r), and titanium (T i).
• the organic component of a base material exists so that it may get involved in the network structure of an inorganic component. Although this structure is formed in a network form throughout the film, a region where the organic component is not entangled with the network structure of the inorganic component can also be manufactured.
• the structure of the nano-coating film can be controlled by assigning manufacturing conditions such as.
• the nanometer-sized inorganic compound component may be one or a plurality of components of silicon, titanium, or zirconium. Further, one or more components of silicon oxide, titanium oxide, and zirconium oxide may be used.
• the protective film containing these inorganic compounds as a component has corrosion resistance and moisture resistance.
• FIG. 11 shows a cross-sectional view of the capacitive ultrasonic transducer in the present embodiment.
• the lower electrode 14 is formed on the upper surface of the silicon substrate (S i 0 2 ZS i) 1 2 that has been surface-insulated, and the insulating film 61 is formed thereon. ing.
• the gap between the adjacent cells 24 and the gap 23 are filled with the filler 60 so that the entire membrane of the capacitive ultrasonic transducer 11 is flat.
• insulating film 61 is, for example, S r T i 0 3, the barium titanate B a T i 0 3, titanium phosphate barium ⁇ strontium, tantalum pentoxide, niobium oxide stabilized tantalum pentoxide, aluminum oxide, Alternatively, a material having a high dielectric constant such as titanium oxide T i 0 2 can be used.
• the filler 60 is flexible in order to improve the SZN ratio of vibration of the membrane 16 to reduce vibration loss, and has a large difference from the acoustic impedance of the membrane material.
• Use materials for the filler 60, for example, a foamed resin can be used.
• the foamed resin should have a large acoustic impedance difference with respect to the membrane material.
• foam resin for example, can be used one obtained by porous the S i 0 2 and S i OF film, L ow _ k (low dielectric constant interlayer insulating film) that is used in the coating film material.
• L ow _ k low dielectric constant interlayer insulating film
• an organic film is used as the foamed resin, a polyimide, parylene, or Teflon (registered trademark) plasma CVD film can be used.
• the elastic modulus is 1 Z 10 or less.
• porous silicon may be used for the filler 60.
• Porous silicon is an innumerable number of nanoscale micro tubes in the thickness direction of silicon. Since the inside of the micropipe is a gas such as air, the acoustic impedance is very small.
• FIG. 12 is a modification of FIG. In FIG. 12, only the space 24 between the adjacent cells is filled with the filler 60, and the gap 23 is not filled. Thereby, since the membrane 16 is not restrained, the sensitivity of ultrasonic transmission / reception can be improved.
• the acoustic impedance of the filling material 60 in the gap 23 is preferably 20% or less, more preferably 10% or less, of the acoustic impedance of the membrane 16. If it exceeds 10%, the vibration efficiency of the membrane will decrease by 3 dB, affecting the sensitivity (brightness) of the image, and at the same time increasing the crosstalk by 3 dB, affecting the image contrast.
• the periphery of the membrane edge between the ultrasonic transducer cells By filling the gap with a filler, it is possible to suppress variations in the ultrasonic output generated by the intrusion of liquid. Moreover, this embodiment can be used in combination with any of the first to third embodiments.
• FIG. 13 shows a cross-sectional view of the capacitive ultrasonic transducer in the present embodiment.
• FIG. 13 is a diagram in which a mass adding portion 70 is provided at the peripheral portion (the outer side portion 7 of the membrane node) of the membrane 16 in FIG. Since the mass adding portion 70 is disposed on the membrane node outer portion 7, the node moves to the mass adding portion 70 side. As a result, the width of the outer portion 7 of the membrane node is reduced, and the nodal diameter 8 is increased.
• FIG. 14 is a modification of FIG. Fig. 14 shows a mass adding portion 70 provided on the membrane node outer portion 7 of Fig. 5.
• the node moves to the mass adding portion 70 side, so that the width of the membrane node outer portion 7 is reduced.
• the nodal circle dimension 8 is larger.
• the area ratio of the area of the inner portion (circle represented by the nodal circle diameter 8) to the area of the membrane node outer portion 7 (the donut shape) increases.
• FIG. 15 shows a cross-sectional view of the capacitive ultrasonic transducer in the present embodiment.
• a lower electrode 80 is formed on the upper surface of a silicon substrate (S i 0 2 ZS i), and an insulating film 61 is formed thereon.
• FIG. 16A shows a top view of the lower electrode 80 in the present embodiment.
• 80 When viewed from the top, 80 is formed in a donut shape, and wiring portions 81 for connecting to adjacent electrodes are provided on all four sides thereof.
• a reference numeral 8 2 in FIG. 16B shows a state of displacement of the upper electrode 15 that vibrates when a voltage is applied to the lower electrode 80. Since at least one of the upper electrode and the lower electrode may have a donut shape, the lower electrode is a donut shape, and the upper electrode 15 is a circular shape. Since the upper electrode on the GND side also has the effect of reducing external noise, the lower electrode on the Signa I side is preferably a donut electrode.
• the conventional lower electrode 90 When the conventional lower electrode 90 is viewed from the top, it is formed in a circular shape, and wiring portions 9 1 for connection to adjacent electrodes are provided on all four sides (FIG. 17A). Thus, the conventional lower electrode 90 is a full surface electrode.
• This embodiment can be used in combination with any of the first to fifth embodiments. According to the present embodiment, since the central portion of the upper electrode corresponding to the portion without the lower electrode maintains a substantially flat surface and hardly deforms, the applied voltage can be increased and the generated force can be increased.
• a method for manufacturing cMUT using a micromachine process will be described.
• Fabrication of cMUT with a structure in which the support part is placed inside the peripheral edge of the membrane and the inside of the support part is kept airtight to increase the amount of displacement of the membrane can be roughly classified into the joining method (bulk machining method) and the surface micromachining method.
• the joining method bulk machining method
• the surface micromachining method There are two types of manufacturing methods.
• a manufacturing process of cMUT using the joining method (bulk machining method) will be described.
• FIGS. 18A and 18B illustrate a manufacturing process of the capacitive ultrasonic transducer according to the present embodiment.
• an N-type silicon substrate 101 (thickness: about 100 to 500 m) is masked with an oxide film (S i 0 2 ) 102.
• the mask is formed by wet oxidation to form an oxide film having a thickness of about 3000 to 4000 A.
• patterning for forming the lower electrode through-hole electrode portion 104 is performed in the photolithography process, and the oxide film patterned in the etching process is removed.
• I CP—RIE Inductively Coupled PI asma Reactive I on Etchin: Inductive “Phfzma Reactive Ion Etching” is used to form holes in the unmasked portion. Opens.
• an electrode film (P tZT i) is formed on the upper and lower surfaces of the silicon substrate 101 on which the oxide film is formed and on the inner wall surface of the hole 103.
• the electrode film is subjected to a patterning process and an etching process to form a lower electrode 105, a wiring electrode 106, and an electrode pad 107 (step 1 process, hereinafter, step is referred to as “S”).
• the electrode material is not limited to PtZTi, but may be AuZCr, Mo, W, phosphor bronze, AI, or the like.
• the structure fabricated in this S1 step is called wafer A.
• another Si substrate 1 1 1 is prepared, and one surface thereof is oxidized to form an oxide film S i 0 2 (1 1 2).
• a part of the oxide film 112 is etched (for example, etching by a CVD method) so as to have a tapered shape by ICP—RIE (S 2).
• the part formed by this etching is called recess
• the membrane support portion 1 1 4 is formed. Similar to S 2, the oxide film 1 1 2 other than the portion to be the membrane support portion is etched by I CP—R I E (S 3). At this time, etching is performed so as to leave the oxide film 1 1 2 having a thickness as a membrane. In addition, since the oxide film 1 1 2 portion sandwiched between the two recesses 1 1 3 is the portion that will later become the membrane, the membrane support portion 1 1 4 has a distance of 0.678 a (a : Patterned to be etched along the position of the radius of the membrane).
• an electrode film 1 15 is formed on the oxide film surface (S 4). Thereafter, patterning is performed and the electrode film other than the portion indicated by reference numeral 116 is etched and removed (S5). As a result, wiring electrodes 1 1 7 are formed.
• the structure produced in S4 is called wafer B.
• wafer A and wafer B are bonded (S 6). Thereafter, the silicon substrate 1 1 1 is removed by etching, and the oxide film 1 1 2 (S i 0 2 ) is exposed (S 7). Etching here can be completed by using, for example, TMAH (Tetra Methy I Ammoniumhydroxide) 1 ⁇ 23 ⁇ 4r.
• TMAH Tetra Methy I Ammoniumhydroxide
• an electrode film 1 1 8 is formed on the exposed oxide film 1 1 2, and a protective film (S i N) 1 1 9 is formed thereon (S 8).
• the method for manufacturing the cMUT of the first embodiment has been described as an example.
• the cMUT of other embodiments can be manufactured using a micromachine process in the same manner.
• the present invention is not limited to the embodiments described above, and can take various configurations or shapes without departing from the gist of the present invention.
• the first to seventh embodiments can be combined with each other.
• the ultrasonic transducer according to the present invention is mounted on an intra-body ultrasonic diagnostic apparatus as an ultrasonic endoscope, a miniature ultrasonic probe, an intravascular ultrasonic probe, or an ultrasonic capsule endoscope. can do.
• the membrane of each cell is independent of the membrane of the adjacent cell, so that it is possible to prevent the dissipation of vibration in the surface direction.
• the membrane is supported by the node portion of the membrane that does not originally vibrate, so that the vibration of the membrane does not leak through the support portion (that is, there is no vibration loss of the membrane).
• high vibration efficiency (High Q) of the membrane can be obtained. As a result, the ultrasonic transmission efficiency is improved.
• the vibration leaking through the support portion which has occurred in the past, becomes a longitudinal wave on the back surface of the silicon substrate. It is possible to improve the crosstalk phenomenon in which the reflected wave is reflected and converted to the membrane vibration of the adjacent cell through the support part of the adjacent cell.

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