WO2007098730A3 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung Download PDF

Info

Publication number
WO2007098730A3
WO2007098730A3 PCT/DE2007/000244 DE2007000244W WO2007098730A3 WO 2007098730 A3 WO2007098730 A3 WO 2007098730A3 DE 2007000244 W DE2007000244 W DE 2007000244W WO 2007098730 A3 WO2007098730 A3 WO 2007098730A3
Authority
WO
WIPO (PCT)
Prior art keywords
pumping radiation
vertical
semiconductor laser
laser device
pumping
Prior art date
Application number
PCT/DE2007/000244
Other languages
English (en)
French (fr)
Other versions
WO2007098730A2 (de
Inventor
Wolfgang Schmid
Martin Mueller
Original Assignee
Osram Opto Semiconductors Gmbh
Wolfgang Schmid
Martin Mueller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Wolfgang Schmid, Martin Mueller filed Critical Osram Opto Semiconductors Gmbh
Priority to US12/224,572 priority Critical patent/US8526480B2/en
Priority to JP2008556649A priority patent/JP5254045B2/ja
Priority to EP07711169A priority patent/EP1989765A2/de
Priority to KR1020087023622A priority patent/KR101339634B1/ko
Priority to CN2007800067334A priority patent/CN101390263B/zh
Publication of WO2007098730A2 publication Critical patent/WO2007098730A2/de
Publication of WO2007098730A3 publication Critical patent/WO2007098730A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Die Erfindung betrifft eine Halbleiterlaservorrichtung mit einem optisch gepumpten oberflächenemittierenden Vertikalemitter (1), der in einer Vertikalhauptstrahlungsrichtung emittiert, und mindestens einer monolithisch integrierten Pumpstrahlungsquelle (2) zum optischen Pumpen des Vertikalemitters (1), wobei die Pumpstrahlungsquelle in einer Pumphauptstrahlungsrichtung, die quer zur Vertikalhauptstrahlungsrichtung verläuft, Pumpstrahlung emittiert. Die Halbleiterlaservorrichtung zeichnet sich gemäß einer ersten Ausführung dadurch aus, dass zumindest ein vertikaler Abschnitt der Pumpstrahlungsquelle (2) in einer Lateralrichtung quer zur Pumphauptstrahlungsrichtung und quer zur Vertikalhauptstrahlungsrichtung indexführend für Pumpstrahlung ausgeführt ist. In einer zweiten Ausführung ist die Halbleiterlaservorrichtung dadurch gekennzeichnet, dass die Pumpstrahlungsquelle (2) in zumindest einem vertikalen Abschnitt in einer Lateralrichtung quer zur Pumphauptstrahlungsrichtung eine geringere Breite aufweist als in einem weiteren vertikalen Abschnitt. Es wird auf diese Weise bei geeigneter Dimensionierung erreicht, dass Moden der Pumpstrahlung ganz oder zumindest teilweise in vertikaler Richtung aus diesem Abschnitt gedrängt wird, wodurch Absorptionsverluste der Pumpstrahlung an leitenden Schichten verringert werden können.
PCT/DE2007/000244 2006-02-28 2007-02-08 Halbleiterlaservorrichtung WO2007098730A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/224,572 US8526480B2 (en) 2006-02-28 2007-02-08 Semiconductor laser device
JP2008556649A JP5254045B2 (ja) 2006-02-28 2007-02-08 半導体レーザ装置
EP07711169A EP1989765A2 (de) 2006-02-28 2007-02-08 Halbleiterlaservorrichtung
KR1020087023622A KR101339634B1 (ko) 2006-02-28 2007-02-08 반도체 레이저 장치
CN2007800067334A CN101390263B (zh) 2006-02-28 2007-02-08 半导体激光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102006009237 2006-02-28
DE102006009237.6 2006-02-28
DE102006011284A DE102006011284A1 (de) 2006-02-28 2006-03-10 Halbleiterlaservorrichtung
DE102006011284.9 2006-03-10

Publications (2)

Publication Number Publication Date
WO2007098730A2 WO2007098730A2 (de) 2007-09-07
WO2007098730A3 true WO2007098730A3 (de) 2008-05-22

Family

ID=38319950

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2007/000244 WO2007098730A2 (de) 2006-02-28 2007-02-08 Halbleiterlaservorrichtung

Country Status (8)

Country Link
US (1) US8526480B2 (de)
EP (1) EP1989765A2 (de)
JP (1) JP5254045B2 (de)
KR (1) KR101339634B1 (de)
CN (1) CN101390263B (de)
DE (1) DE102006011284A1 (de)
TW (1) TWI357699B (de)
WO (1) WO2007098730A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008048903B4 (de) 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
EP2337168B1 (de) * 2009-12-17 2019-12-25 Forschungsverbund Berlin e.V. Oberflächenemittierende Laserstrahlquelle mit zwei Kavitäten
US20110187878A1 (en) * 2010-02-02 2011-08-04 Primesense Ltd. Synchronization of projected illumination with rolling shutter of image sensor
JP2012019086A (ja) * 2010-07-08 2012-01-26 Sony Corp ヒートシンクおよびその製造方法並びに半導体レーザ装置
US9329080B2 (en) 2012-02-15 2016-05-03 Aplle Inc. Modular optics for scanning engine having beam combining optics with a prism intercepted by both beam axis and collection axis
AU2013219966B2 (en) 2012-02-15 2015-04-02 Apple Inc. Scanning depth engine
KR101637891B1 (ko) 2013-09-05 2016-07-08 주식회사 엘지화학 둘 이상의 부재들로 이루어진 전지케이스를 포함하는 각형 전지셀
KR102384228B1 (ko) 2015-09-30 2022-04-07 삼성전자주식회사 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자
DE102016103332A1 (de) * 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249824A (ja) * 1994-03-10 1995-09-26 Hitachi Ltd 半導体レーザ素子及びその製造方法
US5748653A (en) * 1996-03-18 1998-05-05 The United States Of America As Represented By The Secretary Of The Air Force Vertical cavity surface emitting lasers with optical gain control (V-logic)
DE10214120A1 (de) * 2002-03-28 2003-10-23 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
WO2005048424A1 (de) * 2003-11-13 2005-05-26 Osram Opto Semiconductors Gmbh Monolithischer optisch gepumpter vcsel mit seitlich angebrachtem kantenemitter
WO2005101599A1 (en) * 2004-04-14 2005-10-27 Ricoh Company, Ltd. Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子
JP3111957B2 (ja) 1997-12-24 2000-11-27 日本電気株式会社 面発光素子
US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
DE10108079A1 (de) 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10026734A1 (de) * 2000-05-30 2001-12-13 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
CA2328637A1 (en) 2000-12-15 2002-06-15 Richard D. Clayton Lateral optical pumping of vertical cavity surface emitting laser
US6798815B2 (en) * 2002-04-24 2004-09-28 Bookham Technology Plc High power semiconductor laser diode and method for making such a diode
DE10241192A1 (de) 2002-09-05 2004-03-11 Osram Opto Semiconductors Gmbh Optisch gepumpte strahlungsemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung
DE502004008051D1 (de) * 2003-11-13 2008-10-23 Osram Opto Semiconductors Gmbh Optisch gepumpte halbleiterlaservorrichtung
DE102004011456A1 (de) 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter
EP1560306B1 (de) 2004-01-30 2014-11-19 OSRAM Opto Semiconductors GmbH Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249824A (ja) * 1994-03-10 1995-09-26 Hitachi Ltd 半導体レーザ素子及びその製造方法
US5748653A (en) * 1996-03-18 1998-05-05 The United States Of America As Represented By The Secretary Of The Air Force Vertical cavity surface emitting lasers with optical gain control (V-logic)
DE10214120A1 (de) * 2002-03-28 2003-10-23 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
WO2005048424A1 (de) * 2003-11-13 2005-05-26 Osram Opto Semiconductors Gmbh Monolithischer optisch gepumpter vcsel mit seitlich angebrachtem kantenemitter
WO2005101599A1 (en) * 2004-04-14 2005-10-27 Ricoh Company, Ltd. Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system

Also Published As

Publication number Publication date
JP5254045B2 (ja) 2013-08-07
CN101390263B (zh) 2010-09-22
WO2007098730A2 (de) 2007-09-07
KR101339634B1 (ko) 2013-12-09
CN101390263A (zh) 2009-03-18
TW200803091A (en) 2008-01-01
KR20080102249A (ko) 2008-11-24
DE102006011284A1 (de) 2007-08-30
US20090304038A1 (en) 2009-12-10
EP1989765A2 (de) 2008-11-12
JP2009528683A (ja) 2009-08-06
TWI357699B (en) 2012-02-01
US8526480B2 (en) 2013-09-03

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