WO2007096949A1 - Systeme et procede de lithographie photo et procede de fabrication de dispositif electronique - Google Patents

Systeme et procede de lithographie photo et procede de fabrication de dispositif electronique Download PDF

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Publication number
WO2007096949A1
WO2007096949A1 PCT/JP2006/303064 JP2006303064W WO2007096949A1 WO 2007096949 A1 WO2007096949 A1 WO 2007096949A1 JP 2006303064 W JP2006303064 W JP 2006303064W WO 2007096949 A1 WO2007096949 A1 WO 2007096949A1
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WIPO (PCT)
Prior art keywords
atmospheric pressure
amount
stage
pressure
adjustment
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Application number
PCT/JP2006/303064
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English (en)
Japanese (ja)
Inventor
Hitoshi Kikuchi
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Fujitsu Limited
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Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to JP2008501509A priority Critical patent/JPWO2007096949A1/ja
Priority to PCT/JP2006/303064 priority patent/WO2007096949A1/fr
Publication of WO2007096949A1 publication Critical patent/WO2007096949A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow

Definitions

  • the present invention relates to an exposure apparatus, an exposure method, and a method for manufacturing a semi-electronic device.
  • an exposure process of exposing a pattern to a photoresist is performed using an exposure apparatus such as a stepper scanner.
  • the exposure system has a lens system consisting of a plurality of lenses in the lens barrel, but the magnification of each lens can be changed by changing the relative distance of each lens or the air density due to changes in atmospheric pressure.
  • the optical characteristics of the lens system such as the focal length and the focal length, vary from the reference value. Therefore, in the exposure apparatus, it is necessary to return the magnification to the reference value by correcting the magnification change and the defocus, and to make the defocus zero.
  • Patent Documents 1 to 3 such correction is performed based on the value of atmospheric pressure.
  • the atmospheric pressure measured by a barometer is also used to estimate the atmospheric pressure in the lens barrel and perform the above correction using the estimated value.
  • Patent Document 1 Japanese Utility Model Publication No. 63-178320
  • Patent Document 2 Japanese Utility Model Publication 8-21531
  • Patent Document 3 Japanese Patent Laid-Open No. 2003-59807
  • Patent Document 4 Japanese Patent No. 3387861
  • An object of the present invention is to provide an exposure apparatus, a correction method therefor, and a method for manufacturing an electronic apparatus, which have good follow-up of correction with respect to fluctuations in atmospheric pressure.
  • a barometer for measuring atmospheric pressure a lens barrel sealed inside, a lens system housed in the lens barrel, and a pressure in the lens barrel are adjusted.
  • a pressure adjustment unit that can be moved up and down, and a stage on which the substrate can be moved up and down, and an output value of the barometer The atmospheric pressure fluctuation amount per unit time is calculated by taking in the cyclic period, and the pressure adjustment unit is controlled based on the calculated atmospheric pressure fluctuation amount and the taken atmospheric pressure to accompany the atmospheric pressure fluctuation.
  • an exposure apparatus including a control unit that corrects the magnification of the lens system or moves the stage up and down to correct a defocus of the lens system due to atmospheric pressure fluctuation.
  • the magnification correction and defocus correction are performed based not only on the atmospheric pressure but also on the atmospheric pressure fluctuation amount, the correction result follows the atmospheric pressure fluctuation satisfactorily. Even when the atmospheric pressure fluctuation is large, it is possible to sufficiently reduce the magnification fluctuation and the defocus.
  • a step of taking an output value of a barometer at a predetermined sampling period and calculating an atmospheric pressure fluctuation amount per unit time, and a lens system associated with the atmospheric pressure fluctuation A correction step for correcting a change in optical characteristics, and the correction step calculates the pressure in the lens barrel with the inside sealed based on the calculated atmospheric pressure fluctuation amount and the taken-in atmospheric pressure. Adjusting to correct the magnification of the lens system contained in the lens barrel, or based on the calculated atmospheric pressure fluctuation amount and the taken-in atmospheric pressure!
  • a correction method for an exposure apparatus including one of the steps of correcting a defocus of the lens system by moving a stage placed up and down.
  • a step of forming a film on the substrate, a step of applying a photoresist on the film, and an optical characteristic of the exposure apparatus accompanying atmospheric pressure fluctuations A step of correcting the change, a step of exposing the photoresist using the exposure apparatus after the correction, a step of developing the photoresist to form a resist pattern after the exposure, and the resist Etching the film using a pattern as a mask, and using the film left unetched as a device pattern and removing the resist pattern, and correcting the change in the optical characteristics of the exposure apparatus
  • the step of calculating the atmospheric pressure fluctuation amount per unit time by taking in the output value of the barometer at a predetermined sampling period, and calculating the calculated atmospheric pressure fluctuation amount and the taken-in air Based on the above, the pressure in the lens barrel with the inside sealed is adjusted to correct the magnification of the lens system housed in the lens barrel, or the calculated atmospheric pressure fluctuation amount and the capture Based on the atmospheric pressure, the stage on which the substrate
  • the correction is performed based on not only the atmospheric pressure but also the atmospheric pressure fluctuation amount. For this reason, the correction result follows the atmospheric pressure fluctuation well, and even when the atmospheric pressure fluctuation is large, the line width of the device pattern can be easily kept within the standard value.
  • FIG. 1 is a block diagram of an exposure apparatus used in an embodiment of the present invention.
  • FIG. 2 is a diagram schematically showing a first pressure adjustment table used in the embodiment of the present invention.
  • FIG. 3 is a diagram schematically showing a second pressure adjustment table used in the embodiment of the present invention.
  • FIG. 4 is a diagram schematically showing a first stage adjustment table used in the embodiment of the present invention.
  • FIG. 5 is a diagram schematically showing a second stage adjustment table used in the embodiment of the present invention.
  • FIG. 6 is a flowchart showing a correction method for an exposure apparatus according to an embodiment of the present invention.
  • FIG. 7 is a flowchart showing details of a step of correcting the magnification of the lens system in the embodiment of the present invention.
  • FIG. 8 is a flowchart showing details of a step for correcting the defocus of the lens system in the embodiment of the present invention.
  • FIG. 9 shows that when the atmospheric pressure changes with time, the correction term K ( ⁇ ⁇ / t) is not used.
  • FIG. 10 shows the case where the correction term K ( ⁇ / t) is used as in the embodiment of the present invention.
  • FIG. 11 is a diagram showing the value of the correction term K ( ⁇ / t) used in the investigation of FIG.
  • FIG. 12 is a diagram showing the value of the correction term K ( ⁇ / t) that can be used in the embodiment of the present invention. is there.
  • 13 (a) and 13 (b) are cross-sectional views (part 1) of the electronic device according to the embodiment of the present invention in the middle of manufacture.
  • 14 (a) and 14 (b) are cross-sectional views (part 2) of the electronic device according to the embodiment of the present invention in the middle of manufacture.
  • 15 (a) and 15 (b) are cross-sectional views (part 3) of the electronic device according to the embodiment of the present invention in the middle of manufacture.
  • FIG. 16 is a cross-sectional view (part 4) of the electronic device according to the embodiment of the present invention in the middle of manufacture.
  • FIG. 1 is a block diagram of an exposure apparatus used in this embodiment.
  • the exposure apparatus is a stepper and includes a housing 11, a control unit 21, and a barometer 22.
  • a light source 12, a reticle 13, a lens barrel 14, and a stage 18 are arranged in the housing 11.
  • the lens barrel 14 is sealed inside, and a lens system 15 including a plurality of lenses 15a is accommodated in the lens barrel 14. Further, the lens barrel 14 is provided with a pressure adjusting unit 16 for adjusting the internal pressure and a pressure measuring unit 17 for measuring the pressure.
  • the stage 18 has an elevating mechanism 19 that elevates the substrate 100 in the direction shown in the drawing toward the lens barrel 14, and further includes a distance measuring unit 20 for measuring the elevating distance.
  • control unit 21 includes a pressure controller 23, a storage unit 25, and a focus controller 24.
  • the pressure controller 23 captures the atmospheric pressure value (P) output from the barometer 22 at a predetermined sampling period, for example, a period of 30 minutes, and the atmospheric pressure fluctuation amount per unit time ( ⁇ / t) It has a function to calculate. And a pressure adjusting tape described later stored in the storage unit 25 , The atmospheric pressure value (P), and the atmospheric pressure fluctuation amount ( ⁇ / t), the pressure controller 23 instructs the pressure adjustment unit 16 on the pressure adjustment amount.
  • the pressure in the lens barrel 14 after adjustment is measured by the pressure measurement unit 17, and the measurement result is fed back to the pressure controller 23.
  • the pressure in the lens barrel 14 is controlled by a closed loop system.
  • the focus controller 24 also sets the atmospheric pressure value (P).
  • Atmospheric pressure fluctuation per unit time (taken at a predetermined sampling period of about 30 minutes)
  • the focus controller 24 then moves the moving mechanism 19 up and down based on a stage adjustment table (described later) stored in the storage unit 25, the atmospheric pressure value (P), and the atmospheric pressure fluctuation amount ( ⁇ / t). Instruct.
  • the above lifting amount is measured by the distance measuring unit 20 and the measured value is fed back to the focus controller 24. Thereby, the raising / lowering amount of the stage 18 is controlled by a closed loop system.
  • the exposure light emitted from the light source 12 passes through the reticle 13 and the lens system 15, and an exposure pattern (not shown) formed on the reticle 13 is reduced and projected onto the substrate 100. Become.
  • the optical characteristics of the lens system 15 such as the magnification and the focal length vary depending on the atmospheric pressure, it is necessary to correct the optical characteristics according to the atmospheric pressure.
  • the variation in magnification is caused by a change in air density or a change in the relative distance between the lenses 15a. Therefore, it can be corrected by adjusting the pressure in the lens barrel 14.
  • the defocus due to the variation in the focal length can be corrected by moving the stage 18 up and down so that the focal point of the optical system 15 is on the surface of the substrate 100.
  • FIG. 2 to FIG. 5 are diagrams schematically showing tables used for the above correction.
  • FIG. 2 is a diagram schematically showing the first pressure adjustment table 31.
  • the first pressure adjustment table 31 is composed of a pair of the first pressure adjustment amount K and the atmospheric pressure P (hPa).
  • the first pressure adjustment amount K is a value under the condition that the atmospheric pressure fluctuation amount ⁇ / t is zero. This is the amount of pressure adjustment in the lens barrel 14 necessary to make the magnification of the glass system 15 equal to the magnification at the reference atmospheric pressure (for example, lOOOhPa). For example, in the example shown in the figure, when the atmospheric pressure fluctuation ⁇ ⁇ / t is zero and the atmospheric pressure P is lOlOhPa, the pressure adjustment amount in the lens barrel 14 is set to +1 so that the reference atmospheric pressure (lOOOhPa) is Can be the same magnification.
  • the reference atmospheric pressure for example, lOOOhPa
  • the pressure adjustment amount is measured in a control unit, and the pressure unit (hPa) may not be adopted as the unit.
  • FIG. 3 is a diagram schematically showing the second pressure adjustment table 32.
  • the second pressure adjustment table 32 includes the second pressure adjustment amount K and the atmospheric pressure fluctuation amount ⁇ ⁇ / t per unit time.
  • the second pressure adjustment amount K is the atmospheric pressure fluctuation amount when the atmospheric pressure fluctuation amount ⁇ P / t is not zero.
  • FIG. 4 is a diagram schematically showing the first stage adjustment table 41. As shown in this figure, the first stage adjustment table 41 includes the first stage movement amount K and the atmospheric pressure P.
  • the first stage moving amount K is the lens under the condition that the atmospheric pressure fluctuation amount ⁇ / t is zero.
  • defocusing can be made zero by setting the lift of the stage 18 to +2.
  • the stage movement amount is measured in a control unit, and the unit of length may not be adopted as the unit.
  • FIG. 5 is a diagram schematically showing the second stage adjustment table 42.
  • the second stage adjustment table 42 includes the second stage movement amount K and the atmospheric pressure per unit time.
  • the second stage movement amount K is the amount of defocus when the atmospheric pressure fluctuation amount ⁇ P / t is not zero.
  • each table shown in FIGS. 2 to 5 the operator can change the atmospheric pressure P and the atmospheric pressure fluctuation amount ⁇ ⁇ / t.
  • each exposure apparatus is manufactured individually.
  • the exposure apparatus is corrected as follows.
  • FIG. 6 is a flowchart showing a correction method of the exposure apparatus.
  • the control unit 21 captures the atmospheric pressure value P output from the barometer 22 at a predetermined sampling period, for example, a period of 30 minutes, and the atmospheric pressure fluctuation amount per unit time ⁇ / t is calculated.
  • the pressure controller 23 or the focus controller 24 calculates the atmospheric pressure fluctuation amount ⁇ ⁇ ⁇ / t.
  • the atmospheric pressure fluctuation amount ⁇ P / t exceeds an upper limit value, for example, 5 hPa / hour.
  • an upper limit value for example, 5 hPa / hour.
  • step S6 the acceptance of the substrate 10 to be exposed is stopped.
  • the above-described interlock is applied after the exposure is completed.
  • step S7 an alarm such as a warning sound or a warning lamp is issued to notify the operator that the atmospheric pressure fluctuation amount ⁇ P / t has exceeded the upper limit value.
  • an alarm such as a warning sound or a warning lamp is issued to notify the operator that the atmospheric pressure fluctuation amount ⁇ P / t has exceeded the upper limit value.
  • the correction step S3 includes a step S4 for correcting the magnification of the lens system 15 and a step S5 for correcting a defocus of the lens system 15.
  • step S4 by adjusting the pressure in the lens barrel 14, the same magnification as when the atmospheric pressure P is the standard atmospheric pressure (for example, lOOOhPa) and the atmospheric pressure fluctuation amount ⁇ P / t is zero is obtained. Get. [0050] On the other hand, in step S5, the defocus is set to zero by adjusting the lift of the stage 18.
  • the standard atmospheric pressure for example, lOOOhPa
  • FIG. 7 is a flowchart showing details of step S 4 for correcting the magnification of the lens system 15.
  • the pressure controller 23 refers to the first pressure adjustment table 31 (FIG. 2), and the first pressure adjustment amount K ( P)
  • step S 11 the pressure controller 23 moves the second pressure adjustment table 32.
  • a second pressure adjustment amount ⁇ ( ⁇ ⁇ ) corresponding to the atmospheric pressure fluctuation amount ⁇ P / t obtained in step S1 is obtained.
  • step S12 the pressure LP to be applied in the lens barrel 14 is expressed by the following equation (1).
  • LP ⁇ + ⁇ ( ⁇ ) + ⁇ ( ⁇ ⁇ ) ⁇ ⁇ ⁇ ⁇ (1)
  • the pressure controller 23 adjusts the pressure in the lens barrel 14 by this pressure adjustment amount ⁇ ( ⁇ ) + ⁇ ( ⁇ ⁇ / t).
  • the pressure adjustment unit 16 is controlled so as to be adjusted, and thereby the magnification correction according to the atmospheric pressure fluctuation is performed.
  • FIG. 8 is a flowchart showing details of step S 5 for correcting the defocus of the lens system 15.
  • the focus controller 24 refers to the first stage adjustment table 41 (FIG. 4), and the first stage movement amount ⁇ ( ⁇ )
  • step S16 the focus controller 24 refers to the second stage adjustment table 42 (Fig. 5) and corresponds to the atmospheric pressure fluctuation amount ⁇ P / t obtained in step S1. Obtain the second stage travel ⁇ ( ⁇ P / t).
  • the focus controller 24 is a lifting mechanism 1 so that the stage 18 moves up and down by this FO 1
  • Fig. 9 shows that when the atmospheric pressure changes with time, the correction term ⁇ ( ⁇
  • the amount of defocus that is, the amount of deviation between the focal point of the lens system 14 and the substrate 100 will be 0.05 m or less. This value is not a problem because it is within the range of defocus that can be controlled by the exposure system.
  • the followability deteriorates as the atmospheric pressure fluctuation amount ⁇ P / t increases.
  • the atmospheric pressure fluctuation amount ⁇ t / t force may reach 5hPa / hour, and in this case, the error of defocus correction becomes large.
  • the atmospheric pressure fluctuation amount ⁇ P / t is reduced to about 3 hPa / hour with the correction term K ( ⁇ P / t) reduced.
  • the magnification fluctuation is about 2 ppm, and the alignment margin between the substrate 100 and the exposure apparatus is severe.
  • the atmospheric pressure fluctuation ⁇ / t is 4 hPa / hour or more, the magnification fluctuation is 2 to 3 ppm, which may cause a considerable defect.
  • correction terms K ( ⁇ P / t) and K ( ⁇ P / t) are added to equations (1) and (2).
  • FIG. 10 shows a large case when the correction term ⁇ ( ⁇ P / t) is added to the equation (2) as in this embodiment.
  • the tape as shown in FIG. 11 is used as the second stage movement amount K.
  • K is a constant value in the range where ⁇ P / t is 5 or more and 6 or less is large in these ranges.
  • this embodiment has a large defocus of 0.15 / zm when the atmospheric pressure fluctuation amount ⁇ / t is 4hPa / hour.
  • the defocus can be suppressed to within ⁇ 0.05 m even when the atmospheric pressure fluctuation ⁇ ⁇ / t is 3-4 hPa / hour.
  • the accuracy of defocus correction can be improved compared to the case where only the stage adjustment table 41 (see FIG. 4) that considers only the atmospheric pressure P is used, and a large atmospheric pressure change is achieved.
  • a stable focus margin can be obtained.
  • the movement amount K in the second stage adjustment table 42 described in FIG. 5 may be used.
  • the value of K between 0 and +2 is 0, and the atmospheric pressure fluctuation ⁇ ⁇ / t is in the range of 5 or more.
  • K is kept constant within the range of 6 or less.
  • the atmospheric pressure fluctuation amount ⁇ P / t is large, and the follow-up performance of magnification correction in this case is improved.
  • a stable exposure margin can be obtained even with a large change in atmospheric pressure.
  • the timing of the above-described exposure apparatus correction that is, the timing for executing the flowchart of FIG. 6 is not particularly limited.
  • the timing may be the same as the sampling period at which the output value of the barometer 22 is captured, or may be more powerful than that.
  • the timing can be arbitrarily set.
  • the force described for the correction method for one exposure apparatus When there are a plurality of exposure apparatuses in a semiconductor factory or the like, correction is performed for each exposure apparatus by the above method.
  • the first pressure adjustment table 31 and the second pressure adjustment table 32 are individually provided in each exposure apparatus based on the length of each apparatus that does not need to be common to each exposure apparatus. Is preferred.
  • first stage adjustment table 41 and the second stage adjustment table 42 are also individually provided in each exposure apparatus.
  • FIGS. 13 to 16 are cross-sectional views of the electronic device according to this embodiment in the middle of manufacture.
  • a MOS transistor is formed as the electronic device.
  • an element isolation trench is formed in an n-type or p-type silicon (semiconductor) substrate 50, and an oxide silicon film is formed as an element isolation insulating film 51 in the trench.
  • an element isolation structure is S
  • the isolation structure can be obtained by the silicon method.
  • a p-type impurity such as boron is introduced into the active region of the silicon substrate 50 to form p-well.
  • the surface of the active region is subjected to thermal oxidation to form a thermal oxide film having a thickness of about 67 nm as the gate insulating film 52.
  • an amorphous silicon film 53a having a thickness of about 50 nm and a tungsten silicide film 53b having a thickness of about 150 are sequentially formed on the gate insulating film 52.
  • a conductive film 53 composed of these films is formed.
  • a polycrystalline silicon film may be formed instead of the amorphous silicon film 53a.
  • a positive photoresist 54 is applied on the conductive film 53 by spin coating, and the photoresist 54 is cured (cured) by heat treatment.
  • step S6 the flow shown in FIG. 6 is performed by the exposure apparatus described in FIG.
  • the atmospheric pressure fluctuation amount does not exceed the upper limit value in step S2 in FIG. 6, and lens magnification correction and defocus correction are performed in step S3.
  • the correction method is as described in detail with reference to FIGS.
  • the photo register 54 is exposed using an exposure apparatus as shown in FIG. 14 (a).
  • a photosensitive portion 54 a is formed in the photoresist 54 exposed by this exposure.
  • the conductive film 54 is etched using the resist pattern 54b as a mask, and the conductive film 54 remaining without being etched is turned into a gate electrode (device pattern) 53c. And In this etching, the portion of the gate insulating film 52 not covered with the gate electrode 53c is also etched away.
  • phosphorus is introduced as an n-type impurity into the silicon substrate 50 beside the gate electrode 53c by ion implantation using the gate electrode 53c as a mask. Drain extension 55 is formed.
  • an insulating film is formed on the entire upper surface of the silicon substrate 50, and the insulating film is etched back to leave an insulating spacer 57 beside the gate electrode 53c.
  • a silicon oxide film is formed by, for example, a CVD (Chemical Vapor Deposition) method.
  • a source Z drain region 56 is formed in the silicon substrate 50 on the side of the gate electrode 53c.
  • the process proceeds to a step of forming a cobalt silicide layer on the source Z / drain region 56 and forming an inter-layer insulating film or the like on the cobalt silicide layer, but details thereof are omitted.
  • the gate insulating film 52, the gate electrode are formed in the active region of the silicon substrate 50.
  • a MOS transistor constituted by 53c, the source Z drain region 56, and the like is formed.
  • the exposure apparatus magnification correction and defocus correction were performed in accordance with the flow of FIG. 6 before exposure was performed in the step of FIG. 14 (a).
  • the correction is performed by the correction terms ⁇ ( ⁇ ⁇ ), ⁇ ( ⁇ ( ⁇ ) corresponding to the atmospheric pressure fluctuation amount ⁇ P / t as in the equations (1) and (2).
  • the accuracy of the correction can be increased and the line width of the resist pattern 54b can be kept within the standard value.
  • the power of forming a MOS transistor as an electronic device is not limited to this.
  • the present invention can also be applied to an exposure process in a TFT (Thin Film Transistor) manufacturing process of a liquid crystal panel.

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Abstract

Le problème à résoudre dans le cadre de l'invention est de fournir un système de lithographie photo montrant de bonnes performances de suivi de correction en cas de variation de la pression atmosphérique et de fournir son procédé de correction et un procédé pour fabriquer un dispositif électronique. Le moyen de résoudre le problème consiste à créer un système de lithographie optique comprenant un baromètre (22) pour mesurer la pression atmosphérique (P), un tube de corps (14) ayant un intérieur fermé, un système de lentille (15) contenu dans le tube de corps (14), une section de régulation de pression (16) pour réguler la pression dans le tube de corps (14), une plate-forme (18) qui peut s'élever/s'abaisser avec un substrat (100) fixé et une section de commande (21) pour relever la pression atmosphérique (P) mesurée par le baromètre (22) à une période d'échantillonnage prédéterminée, pour calculer la variation de pression atmosphérique par unité de temps (ΔP/t), pour contrôler la section de régulation de pression (16) en fonction des variations de la pression atmosphérique (ΔP/t) ainsi calculée et la pression atmosphérique (P) ainsi relevée afin de corriger l'agrandissement du système de lentille (15) incident à la variation de la pression atmosphérique ou de corriger la défocalisation du système de lentille (15) incidente à la variation de la pression atmosphérique en élevant/abaissant la plate-forme (18).
PCT/JP2006/303064 2006-02-21 2006-02-21 Systeme et procede de lithographie photo et procede de fabrication de dispositif electronique WO2007096949A1 (fr)

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JP2008501509A JPWO2007096949A1 (ja) 2006-02-21 2006-02-21 露光装置、露光方法、及び電子装置の製造方法
PCT/JP2006/303064 WO2007096949A1 (fr) 2006-02-21 2006-02-21 Systeme et procede de lithographie photo et procede de fabrication de dispositif electronique

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN104169797A (zh) * 2012-02-04 2014-11-26 卡尔蔡司Smt有限责任公司 操作微光刻投射曝光设备的方法及该设备的投射物镜
CN114384762A (zh) * 2020-10-19 2022-04-22 上海微电子装备（集团）股份有限公司 投影物镜

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CN114384762A (zh) * 2020-10-19 2022-04-22 上海微电子装备（集团）股份有限公司 投影物镜
CN114384762B (zh) * 2020-10-19 2023-06-30 上海微电子装备（集团）股份有限公司 投影物镜

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