WO2007066225A3 - Mikrolithographische projektionsbelichtungsanlage sowie verfahren zur herstellung mikrostrukturierter bauelemente - Google Patents

Mikrolithographische projektionsbelichtungsanlage sowie verfahren zur herstellung mikrostrukturierter bauelemente Download PDF

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Publication number
WO2007066225A3
WO2007066225A3 PCT/IB2006/003878 IB2006003878W WO2007066225A3 WO 2007066225 A3 WO2007066225 A3 WO 2007066225A3 IB 2006003878 W IB2006003878 W IB 2006003878W WO 2007066225 A3 WO2007066225 A3 WO 2007066225A3
Authority
WO
WIPO (PCT)
Prior art keywords
illumination system
microlithographic projection
microstructured components
projection illumination
producing microstructured
Prior art date
Application number
PCT/IB2006/003878
Other languages
English (en)
French (fr)
Other versions
WO2007066225A2 (de
Inventor
Toralf Gruner
Bernd Geh
Original Assignee
Zeiss Carl Smt Ag
Toralf Gruner
Bernd Geh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Ag, Toralf Gruner, Bernd Geh filed Critical Zeiss Carl Smt Ag
Priority to JP2008539538A priority Critical patent/JP2009516367A/ja
Priority to KR1020087010757A priority patent/KR101369132B1/ko
Publication of WO2007066225A2 publication Critical patent/WO2007066225A2/de
Publication of WO2007066225A3 publication Critical patent/WO2007066225A3/de
Priority to US12/054,991 priority patent/US20080204692A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

Bei einem Verfahren zur Herstellung mikrostrukturierter Bauelemente wird in einer mikrolithographischen Projekti- onsbelichtungsanlage (PEA) ein Muster (M) aus Strukturen (STl bis ST6) in eine Bildebene eines Projektionsobjektivs (PL) abgebildet. Erfindungsgemäß wird derart auf die Dosisverteilung von Projektionslicht in der Bildebene eingewirkt, daß das Abbild einer Struktur zumindest im wesentlichen unabhängig von der Topographie von Strukturen ist, die sich innerhalb eines die Struktur umgebenden Bereichs befinden.
PCT/IB2006/003878 2005-11-10 2006-11-08 Mikrolithographische projektionsbelichtungsanlage sowie verfahren zur herstellung mikrostrukturierter bauelemente WO2007066225A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008539538A JP2009516367A (ja) 2005-11-10 2006-11-08 微細構造化部品を製造するためのマイクロリソグラフィ投影露光装置及び方法
KR1020087010757A KR101369132B1 (ko) 2005-11-10 2006-11-08 마이크로구조화된 구성요소들을 제조하기 위한 마이크로리소그래픽 투사 조명 시스템, 및 방법
US12/054,991 US20080204692A1 (en) 2005-11-10 2008-03-25 Microlithographic projection exposure apparatus and method for producing microstructured components

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005053651.4 2005-11-10
DE102005053651A DE102005053651A1 (de) 2005-11-10 2005-11-10 Mikrolithographische Projektionsbelichtungsanlage sowie Verfahren zur Herstellung mikrostrukturierter Bauelemente

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/054,991 Continuation US20080204692A1 (en) 2005-11-10 2008-03-25 Microlithographic projection exposure apparatus and method for producing microstructured components

Publications (2)

Publication Number Publication Date
WO2007066225A2 WO2007066225A2 (de) 2007-06-14
WO2007066225A3 true WO2007066225A3 (de) 2007-10-25

Family

ID=37982584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2006/003878 WO2007066225A2 (de) 2005-11-10 2006-11-08 Mikrolithographische projektionsbelichtungsanlage sowie verfahren zur herstellung mikrostrukturierter bauelemente

Country Status (5)

Country Link
US (1) US20080204692A1 (de)
JP (1) JP2009516367A (de)
KR (1) KR101369132B1 (de)
DE (1) DE102005053651A1 (de)
WO (1) WO2007066225A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5438848B2 (ja) * 2010-02-23 2014-03-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びデバイス製造方法
EP2369413B1 (de) 2010-03-22 2021-04-07 ASML Netherlands BV Beleuchtungssystem und Lithographievorrichtung
DE102013213545A1 (de) * 2013-07-10 2015-01-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie

Citations (5)

* Cited by examiner, † Cited by third party
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EP1020770A2 (de) * 1999-01-15 2000-07-19 Svg Lithography Systems, Inc. Dosissteuerung zur Korrektur der Linienbreitenänderung längs der Abtastrichtung
EP1139173A2 (de) * 2000-03-31 2001-10-04 Carl Zeiss Mikrolithographisches Beleuchtungssystem und damit versehene mikrolithographische Projektionsbelichtungsanlage
WO2004006021A2 (de) * 2002-07-08 2004-01-15 Carl Zeiss Smt Ag Optische vorrichtung mit einer beleuchtungsquelle
WO2005040927A2 (en) * 2003-10-18 2005-05-06 Carl Zeiss Smt Ag Device and method for illumination dose adjustments in microlithography
US20050146704A1 (en) * 2003-09-26 2005-07-07 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method

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JP3267414B2 (ja) * 1993-11-11 2002-03-18 キヤノン株式会社 走査型露光装置及び該走査型露光装置を用いるデバイス製造方法
JPH08250402A (ja) * 1995-03-15 1996-09-27 Nikon Corp 走査型露光方法及び装置
JPH1027743A (ja) * 1996-07-11 1998-01-27 Canon Inc 投影露光装置、デバイス製造方法及び収差補正光学系
US6628370B1 (en) * 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
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JP3817365B2 (ja) * 1998-04-30 2006-09-06 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
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EP1020770A2 (de) * 1999-01-15 2000-07-19 Svg Lithography Systems, Inc. Dosissteuerung zur Korrektur der Linienbreitenänderung längs der Abtastrichtung
EP1139173A2 (de) * 2000-03-31 2001-10-04 Carl Zeiss Mikrolithographisches Beleuchtungssystem und damit versehene mikrolithographische Projektionsbelichtungsanlage
WO2004006021A2 (de) * 2002-07-08 2004-01-15 Carl Zeiss Smt Ag Optische vorrichtung mit einer beleuchtungsquelle
US20050146704A1 (en) * 2003-09-26 2005-07-07 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
WO2005040927A2 (en) * 2003-10-18 2005-05-06 Carl Zeiss Smt Ag Device and method for illumination dose adjustments in microlithography

Also Published As

Publication number Publication date
KR101369132B1 (ko) 2014-03-04
KR20080066935A (ko) 2008-07-17
JP2009516367A (ja) 2009-04-16
WO2007066225A2 (de) 2007-06-14
DE102005053651A1 (de) 2007-05-16
US20080204692A1 (en) 2008-08-28

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