WO2007066098A1 - Cellule solaire organique - Google Patents
Cellule solaire organique Download PDFInfo
- Publication number
- WO2007066098A1 WO2007066098A1 PCT/GB2006/004547 GB2006004547W WO2007066098A1 WO 2007066098 A1 WO2007066098 A1 WO 2007066098A1 GB 2006004547 W GB2006004547 W GB 2006004547W WO 2007066098 A1 WO2007066098 A1 WO 2007066098A1
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- WIPO (PCT)
- Prior art keywords
- solar cell
- cell according
- group
- organic
- electrode
- Prior art date
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
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- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
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- 230000001443 photoexcitation Effects 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
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- 125000003367 polycyclic group Chemical group 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B17/00—Azine dyes
- C09B17/06—Fluorindine or its derivatives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/731—Liquid crystalline materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to an organic solar cell based on an organic ionic-crystalline photoelectric layer.
- Photovoltaic devices are intended for converting electromagnetic radiation into electricity. Such devices are used to drive power consuming loads so as to provide, for example, lighting or heating, or to operate electronic equipment. Thereby, an electronic device (e.g., a computer monitor, display, exposure meter, etc.) connected as the external resistive load to a photovoltaic source can operate using converted solar energy. Such power generation applications often involve the charging of batteries or other energy storage devices, so that equipment operation may continue when direct illumination from the sun or other ambient light source is no longer available.
- the term "resistive load” refers to any power consuming or storing device, equipment, or system.
- Photovoltaic devices produce a photogenerated built-in voltage when they are connected to a resistive load and are irradiated by light. When irradiated without any external resistive load, a photovoltaic device generates its maximum possible built-in voltage V called open-circuit voltage (Voc). If a photovoltaic device is irradiated with its electrical contacts shorted, a maximum current, the short-circuit current (Isc), is produced. When actually used to generate power, a photovoltaic device is connected to a finite resistive load and the output power is given as the product of the current and voltage, I x V. The maximum total power generated by a photovoltaic device is inherently incapable of exceeding the product Isc x Voc. When a load value is optimized for maximum power extraction, the current and voltage have values Imax and Vmax, respectively.
- Other criteria of the efficiency of a photovoltaic device can be used as well.
- the external quantum efficiency characterizes the number of electrons generated per one incident radiation quantum (photon) and the internal quantum efficiency is the number of electrons produced per one photon absorbed by the given photovoltaic device.
- inorganic semiconductors such as crystalline, polycrystalline, and amorphous silicon, gallium arsenide, and cadmium telluride
- semiconductor refers to a material capable of conducting electric current, in which the free carriers of the electric charge (electrons and holes) are generated by means of thermal or electromagnetic excitation.
- photovoltaic devices or photovoltaic elements typically comprise a p— n junction formed in a single crystal semiconductor (e.g., silicon) substrate.
- a single crystal semiconductor e.g., silicon
- an n-type surface region is diffused into a p-type silicon substrate and ohmic contacts are applied.
- photons incident upon the n-type surface travel to the junction and the p-type region where they are absorbed in the production of electron— hole pairs.
- the conversion efficiency of conventional photovoltaic devices is limited by a number of factors.
- the built-in voltage is limited by a relatively narrow bandgap of silicon and by the limited extent to which both p- and n-type layers of silicon can be doped. While the built-in voltage of the device can be increased through increased doping of both layers forming the junction, such excess doping tends to reduce the conversion efficiency by reducing the lifetime of charge carriers and thereby the collection efficiency of the device.
- the open- circuit voltage of a typical silicon photovoltaic device is only about 50% of the silicon bandgap value.
- silicon tends to absorb high-energy photons, that is, blue and ultraviolet light, very close to the surface (typically within a micron thick layer).
- photovoltaic devices are characterized by the efficiency of converting solar energy into useful electricity.
- Silicon-based photovoltaic devices reach relatively high conversion efficiencies, on a level of 12— 15%.
- the conversion efficiency of a particular photovoltaic device depends significantly on the quality of materials employed.
- important limiting factor in real devices are leak currents caused by the recombination of photoproduced charge carriers.
- undesired electron— hole interactions cause a portion of electrons to return to the valence band of the semiconductor or to localize in allowed energy levels in the forbidden band of the semiconductor.
- the leak currents are usually caused by the presence of so-called point defects and/or other deviations from the ideal crystalline structure of a semiconductor, which lead to the appearance of such allowed energy states in the forbidden band.
- the electron— hole interactions proceed by a mechanism called 'radiative recombination'.
- the radiative recombination is a "slow" process.
- the process of the radiative recombination offers the only channel for decay of the electron— hole pairs. This process involves no local energy levels and the radiative recombination can proceed directly from a conduction to a valence band.
- a high efficiency of converting the solar energy into electricity is indirect evidence of the absence of more rapid (i.e., more effective) channels of the nonradiative recombination in a given material.
- Materials with molecular stacks oriented perpendicularly to the substrate surface are obtained by epitaxy of planar polycyclic molecules.
- a quasi-epitaxial optoelectronic device structure comprises a substrate, the first layer deposited on said substrate, and the second layer deposited above the first layer.
- Said first layer represents a planar crystalline film of an organic aromatic semiconductor compound and is selected from a group of organic compounds including polyacenes, porphyrins, and their derivatives.
- Said second layer also represents a planar crystalline film of an organic aromatic semiconductor, whose chemical composition (generally, different from that of the first layer) is also selected from a group of organic compounds including polyacenes, prophyrins, and their derivatives.
- the first and second layers have crystalline structures, which are in a certain relationship with each other.
- the first and second layers can be independently selected from a group including 3,4,9, 10-perylenetetracarboxylic dianhydride (PTCDA), 3,4,7,8- naphthalenetetracarboxylic dianhydride (NTCDA), copper phthalocyanine, 3,4,9,10- perylenetetracarboxylic acid bis-benzimidazole, and -oxadiazole derivatives.
- PTCDA 3,4,9, 10-perylenetetracarboxylic dianhydride
- NTCDA 3,4,7,8- naphthalenetetracarboxylic dianhydride
- copper phthalocyanine 3,4,9,10- perylenetetracarboxylic acid bis-benzimidazole, and -oxadiazole derivatives.
- optoelectronic devices have been grown by organic molecular beam deposition.
- the organic substances have been deposited as ultrathin layers only 10 Angstrom (A) thick using organic molecular beam deposition methods.
- PTCDA and NTCDA have been identified as excellent materials for the manufacture of organic optoelectronic IC devices, but any planar organic aromatic semiconductor capable of readily forming a crystalline structure may be used.
- the preferred method of the prior art employs a chamber, comprising an inorganic substrate made of an appropriate material for making electrical contact to the organic structures, and sources of PTCDA and NTCDA.
- the chamber is maintained at a pressure generally below 10 '6 Torr.
- the substrate is spaced from the source of film materials by a minimum distance of 10 cm. During deposition, the substrate is kept at a temperature below 150K, while the PTCDA and NTCDA sources are alternatively heated.
- the reactor chamber must hold an ultrahigh vacuum (down to 10 "6 - 10 ⁇ 10 Torr) and must withstand considerable temperature gradients between closely spaced zones.
- the equipment must include the means of heating sources and cooling substrates, a complicated pumping stage, and facilities for gas admission, temperature and pressure monitoring, and technological process control.
- the high vacuum requirements make the process expensive and limit the substrate dimensions.
- One more disadvantage of said known method is limitation on the substrate materials: only substances retaining their physical, mechanical, optical, and other properties under the conditions of large pressure differences, high vacuum, and considerable temperature gradients can be employed.
- F16CoPc Fully fluorinated cobalt phthalocyanine
- RAIRS reflection-absorption infrared spectroscopy
- XPS and UPS X-ray and ultraviolet photoelectron spectroscopy
- STM scanning tunnelling microscopy
- the UPS spectra of thin films of CoPc, F16CoPc, and nickel tetraphenylporphyrin (NiTPP) on gold were measured and their relative surface charges were compared.
- STM images of single molecular layers of F16CoPc, NiTPP, and NiTPP-FI 6CoPc and NiTPP-CoPc mixtures were obtained.
- NiTPP-FI 6CoPc spontaneously formed a well-ordered 1 :1 structure
- NiTPP-CoPc formed a two-dimensional solid solution.
- Ultrathin films prepared from inorganic and organic materials are of increasing interest as hybrid nanocomposite materials.
- the formation of nanostructured ultrathin films of montmorillonite clay (MONT) and a bicationic sexithiophene derivative (6TN) was investigated using the layer-by- layer self-assembly approach (see X. Fan, J. Locklin, J. Ho Youk, et al., Nanostructured
- the available literature presents no examples of the films with the vertical orientation of stacks prepared by a low-cost and effective way of solution application on the substrate.
- the films with the horizontal orientation of stacks are usually obtained using the lyotropic liquid crystal (LLC) solutions of sulfoderivatives (see: U.S. Patent Nos. 5,739,296 and 6,049,428 and the following publications: P. Lazarev et al., X-ray Diffraction by Large Area Organic Crystalline Nanofilms, Molecular Materials, 14(4), 303-311 (2001), and Y. Bobrov, Spectral Properties of Thin Crystal Film Polarizers, Molecular Materials, 14(3), 191-203 (2001 )).
- LLC lyotropic liquid crystal
- This network controls and templates new surface phases formed by subsequently deposited fullerene molecules. It was found that the open network acts as a 2D array of large pores of sufficient capacity to accommodate several large guest molecules and serves as a template for the formation of an ordered fullerene layer.
- TMA trimesic acid
- TMA trimer [(TMA) 3 ] solution phase nucleation species which is a likely precursor to the flower form of TMA; however, an explanation based on differential solvent stabilization of the surface monolayer of flower and chickenwire structures cannot be ruled out.
- the acid- amide H-bonding is sufficiently strengthened by donor acidity and acceptor basicity in 3, so that the role of the Ph-PhF synthon is weaker because the aromatic rings stack with lateral offset.
- the complex C 6 H 5 COOH 1 C 6 F 5 CONH 2 (4) could not be obtained under similar crystallization conditions.
- the crystal structure of C 6 F 5 CONH 2 was also determined to compare the molecular conformation and H-bonding with motifs in the cocrystals.
- 4-hydroxybenzoic acid (1) crystallizes into three crystalline forms: (i) monoclinic from a DMSO solution (1A), (ii) triclinic from a solution in 1 :1 DMSO/hot ethyl acetate (1 B), and (iii) triclinic from a pyridine solution (1 C) (see Jayaraman et al., Crystal Growth & Design, 4, 1403-1409 (2004)).
- the formation of these pseudopolymorphs and the structural similarity of their packing motifs can be rationalized in terms of few-multipoint solute-solvent interactions.
- the crystallographic aspects pertaining to the influence of solvent molecules towards the formation of H-bonded network structures are described. In addition to the strong H- bonds, intermolecular C-H--O, C-H- ⁇ , and ⁇ - ⁇ interactions were found to stabilize the crystal structures.
- the structures had increasing degree of complexity in the overall H-bonded network.
- the structure of 1 comprises polymeric H-bonded chains of associated 4,4-DP and ICA molecules that propagate through complementary sites on the ICA molecules.
- the structure of 2 consisted of two parallel polymeric H-bonded chains, each involving associated 4,4-DP and 3-ABA molecules cross-linked through complementary 3-ABA sites.
- the structure of 3 was an extensive 3-dimensional H-bonded network involving all H-bonded donor and acceptor sites on the constituent molecules. In each case, the positions and directions of the N-H groups were important in determining the final lattice network.
- Crystalline silicon solar cells have been well known and widely utilized as devices for directly converting light into electric energy in the field of weak power consumption and as independent power sources.
- Crystalline silicon solar cells are made predominantly of single- crystalline or amorphous silicon.
- the production of silicon single crystals and amorphous silicon requires enormous amounts of energy and, in order to recover energy consumed for manufacturing silicon-based cells, electric power generation needs to be carried out continuously for nearly a ten-year long period.
- solar cells utilizing dye sensitizers have received much attention (see B. O'Regan and M. Gratzel, A Low-Cost, High-Efficiency Solar Cell Based on Dye-Sensitized Colloidal TiO 2 Film, Nature, 353, 737 - 740 (1991); M.
- Figure 1 shows the cross section of a prior art dye-sensitized solar cell
- Figure 2 shows the cross section of a solar cell according to one embodiment of the present invention.
- Figure 3 shows the cross section of a solar cell according to another embodiment of the present invention.
- Dye-sensitized solar cells differ from the conventional semiconductor devices in that they separate the functions of light absorption and charge carrier transport.
- n-type semiconductor materials such as TiO 2
- current is generated when the absorption of photons by dye molecules leads to the injection of electrons into the conduction band of the semiconductor (see Figure 1).
- the dye In order to close the circuit, the dye must be regenerated at the expense of the electron transfer from redox species in solution, which are subsequently reduced at the counter electrode.
- a dye-sensitized solar cell consists of two transparent substrates 1 and 2 (e.g., glass plates) with transparent conducting layers 3 and 4 (e.g., tin oxide (SnO 2 ) films).
- Said substrates and conducting layers form the first electrode (photoelectrode) 5 and the second electrode (counter electrode) 6.
- One side of the photoelectrode is coated with a porous layer 7 of a wide-bandgap semiconductor, usually TiO 2 , which is sensitized for visible light by an adsorbed dye film.
- the semiconductor layer 7 is deposited onto conducting layer 3 from a colloidal solution and has a large specific surface.
- This semiconductor layer typically with a thickness of 10 ⁇ m and a porosity of about 50%, has a surface area (available for dye chemisorption) more than a thousand times that of a flat layer of the same size.
- Short-term sintering at 45O 0 C leads to the formation of electrical contacts between particles in the semiconductor layer, which are depicted by open circles 8 in Figure 1.
- the dimensions of particles and pores making up the porous semiconductor layer 7 are determined by the size of particles in the colloidal solution.
- the internal surface area of the porous semiconductor layer 7 depends on the particle size and the layer thickness. These parameters should be optimized so as to provide for the effective light collection, while maintaining the pore size large enough to allow the redox electrolyte 9 to diffuse easily.
- Alternative wide- bandgap oxides such as ZnO and Nb 2 O 5 can be used as well.
- the space between the two electrodes is filled with electrolyte 9, which contains redox couples such as iodide (Q/triiodide (I 3 " ).
- the dye molecules 10 which are depicted in Figure 1 by dark contours surrounding the white circles, are adsorbed on TiO 2 particles. Upon the absorption of incident photons 11 , the dye molecules inject electrons into TiO 2 particles on which they are adsorbed. The electrons are transported via TiO 2 particles (which are sintered together at their contact points) until they reach the conducting layer 3.
- the oxidized dye species resulting from the photoinduced electron transfer are reduced by iodide (l ⁇ ) species in the electrolyte that fills pores in the semiconductor layer 7.
- the remaining triiodide (I 3 " ) species diffuse to the counter electrode, where they are converted back to iodide (f) by electrons arriving via an external chain with load 12.
- Dye-sensitized solar cells are expected to serve as solar cells for the next generation because of simplicity and efficiency of fabrication technology, reduced material costs, and the like.
- One approach to manufacturing dye-sensitized solar cells has been described in J. Am Ceram. Soc, 80(12), 3157-3171 (1997), according to which a dye sensitizer (such as a transition metal complex) is adsorbed on the surface of a titanium oxide layer representing a porous
- a dye-sensitized solar cell is manufactured as follows: a transparent substrate, on which a transparent conducting layer and a semiconductor layer of titanium oxide are formed, is immersed in a solution containing a dye sensitizer, so that the dye sensitizer is adsorbed on the semiconductor surface. Then, an electrolyte solution containing redox species is applied dropwise onto the semiconductor layer. Finally, a counter electrode is stacked above the resulting semiconductor layer.
- the solar cell thus obtained is irradiated with visible light from the side of the semiconductor layer, the dye sensitizer supported on the semiconductor layer absorbs the light so that electrons in the dye sensitizer molecules are excited.
- solar cells have to be optimized so as to increase the generated current (short-circuit current), the open- circuit voltage, and the durability.
- the open-circuit voltage it is necessary to decrease a reverse current passing from the semiconductor layer to the dye sensitizer and/or to the electrolyte layer.
- the dyes used as sensitizers in prior art possessed high resistivities. Accordingly, these dyes were used as thin monolayers adsorbed on the surface of the semiconductor layer. However, a thin dye layer does not provide for the absorption of all or a substantial part of the incident light. Therefore, it is necessary to increase the thickness of the dye layer so as to increase the absorbed light fraction. Unfortunately, thick sensitizer layers lead to a considerable increase in the serial resistance of a solar cell, which, in turn, results in a decrease in the photovoltaic conversion efficiency of the cell.
- porous semiconductor layers have been used in prior art.
- semiconductor layer typically having a thickness of 10 ⁇ m and a porosity of about 50%, has a surface area (available for dye adsorption) more than a thousand times that of a flat, simple nonporous electrode of the same size. Then, even if the dye is adsorbed as a monomolecular layer, a sufficient amount of it can be retained on a given electrode area so as to provide the absorption of almost all of the incident light.
- Another drawback of the dye-sensitised solar cell known in prior art is that the dye may completely block pores in the semiconductor layer, thus hindering the penetration of electrolyte into these pores.
- the present invention provides an organic acid of general structure
- Het is a planar conjugated heterocyclic molecular system
- X is an acid group
- n 1 , 2, 3, 4, 5, 6, 7 or 8,
- Y is an amide of acid group
- n 1 , 2, 3 or 4,
- R is a substituent selected from the list comprising -CH 3 , -C 2 H 5 , -NO 2 , -Cl, -Br, -F, -
- the present invention provides an organic solar cell comprising: a first electrode and a second electrode spaced from each other; an organic ionic-crystalline photoelectric layer situated between the first electrode and the second electrode and contacting with the first electrode; and an electrolyte which is situated between the organic ionic-crystalline photoelectric layer and the second electrode and impregnates the organic ionic-crystalline photoelectric layer.
- the organic ionic-crystalline photoelectric layer is capable of absorbing electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm.
- This layer consists of rodlike supramolecules, which are comprised of the molecules of at least one organic compound of the general structural formula where Het is a planar conjugated heterocyclic system; X is an acid group; m is 1 , 2, 3, 4, 5, 6, 7 or 8; Y is an acid amide group; n is 0, 1 , 2, 3 or 4; R is a substituent selected from the list including - CH3, -C2H5, -NO2, -Cl, -Br, -F, -CF3, -CN, -OH, OCH3, -OC2H5, -OCH3, -OCN, -SCN -NH2, - NHCOCH3, and -CONH2; z is 0, 1 ,2, 3 or 4, K is a counterion selected from the list comprising H + , NH +
- the present invention provides an organic solar cell based on a new organic ionic- crystalline photoelectric layer with a resistivity approximately equal to the resistivity of crystalline or amorphous silicon (see Figure 2 and Figure 3). Therefore, the disclosed solar cell may contain a thick photoelectric ionic-crystalline layer 13 having at least one thousand monolayers. The use of thick photosensitive layers considerably increases the fraction of absorbed incident light at an insignificant increase in the serial resistance of the cell. Thus, the disclosed organic solar cell employs the ionic-crystalline layer as an active photosensitive element.
- the organic ionic- crystalline photoelectric layer is situated between the first electrode 5 and the second electrode 6 and contacts with the first electrode and the electrolyte.
- the organic ionic-crystalline photoelectric layer 13 consists of rodlike supramolecules 14, which are oriented both predominantly
- the organic ionic-crystalline photoelectric layer is impregnated with electrolyte 9 containing redox couples. This electrolyte provides electric contact with the second electrode 6.
- the disclosed organic solar cell operates as follows.
- the thick organic ionic-crystalline photoelectric layer which is made of disclosed organic dye compound, is formed on the surface of the first electrode. Photoexcitation of the dye results in the injection and passage of electrons or holes along the rodlike supramolecules and their subsequent injection into the first electrode. The initial state of the dye is subsequently restored by electron (or hole) donation from the electrolyte that permeates into the organic ionic-crystalline photoelectric layer.
- the electrolyte is usually an organic solvent containing a redox system such as the iodide/triiodide couple. Regeneration of the organic dye compound by iodide eliminates recapture of the conduction band electrons by the oxidized dye. The iodide species are regenerated, in turn, by the reduction of triiodide at the second electrode, the circuit being closed due to electron migration via an external chain with load.
- the organic ionic-crystalline photoelectric layer is made of a conducting organic compound.
- at least one of said electrodes is transparent.
- at least one acid group is carboxy group (COOH).
- at least one acid group is sulfonic group (SO3H).
- at least one acid amide group is an amide of carboxylic acid (CONH2).
- at least one acid amide group is an amide of sulfonic acid (SO2NH2).
- the organic compound comprises carboxylic group COOH and group of carboxylic acid amide CONH2 and the rodlike supramolecules are oriented predominantly perpendicularly to the surface of the first electrode.
- the organic compound comprises sulfonic group SO3H and the rodlike supramolecules are oriented predominantly parallel to the surface of the first electrode.
- the planar conjugated heterocyclic system is a vat dye comprising anthraquinone fragments.
- Table 1 shows some examples of vat dyes comprising anthraquinone fragments of the general structural formula corresponding to structures 1-11.
- the planar conjugated heterocyclic system is a vat dye comprising perylene fragments.
- Table 2 shows some examples of vat dyes comprising perylene fragments of the general structural formula corresponding to structures 12-41
- the planar conjugated heterocyclic system is a vat dye comprising anthanthrone fragments.
- Table 3 shows some examples of vat dyes comprising such anthanthrone fragments of the general structural formula corresponding to structures 42 and 43.
- the planar conjugated heterocyclic system is a dye comprising quinoxaline fragments.
- Table 4 shows some examples of dyes comprising such quinoxaline fragments of the general structural formula corresponding to structures 44-55.
- the planar conjugated heterocyclic system comprises a dioxazine fragment.
- Table 5 shows some examples of dyes comprising such dioxazine fragments of the general structural formula corresponding to structures 56-57.
- the planar conjugated heterocyclic system comprises a quinacridone fragment.
- Table 6 shows some examples of dyes comprising such quinacridone fragments of the general structural formula corresponding to structures 58-59. Table 6. Examples of dyes comprising planar conjugated quinacridone fragments
- the planar conjugated heterocyclic system comprises naphthoylenebenzimidazole fragments.
- Table 7 shows some examples of such systems of the general structural formula corresponding to structures 60-61. Table 7. Examples of dyes comprising planar conjugated
- planar conjugated heterocyclic system comprises phthalocyanine of the general structural formula 62:
- the organic ionic-crystalline photoelectric layer is substantially insoluble in the electrolyte.
- the first electrode comprises a transparent substrate and a conducting film that is formed on the surface of the transparent substrate and is in contact with the organic ionic-crystalline photoelectric layer.
- the transparent substrate is a polymer film.
- said polymer film is made of a material selected from the group comprising poly(ethylene terephthalate) (PET), poly(ethylene naphthalate) (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAC).
- said conducting film is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga 2 O 3 , ZnO-AI 2 O 3 , and SnO 2 -Sb 2 O 3 .
- ITO indium tin oxide
- FTO fluorine tin oxide
- ZnO-Ga 2 O 3 ZnO-AI 2 O 3
- SnO 2 -Sb 2 O 3 SnO 2 -Sb 2 O 3
- the second electrode also carries the photocurrent over the width of each solar cell.
- the second electrode must be well conducting and possessing low overvoltage for the reduction of redox couples.
- the second electrode comprises a transparent substrate and a two-layer conducting film, with the first and second conducting layers formed on the inner surface of the substrate facing electrolyte.
- the transparent substrate of the second electrode is a polymer film.
- said polymer film is made of a material selected from the group comprising polyethylene terephthalate (PET), polyethylene naphthalate) (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAC).
- the first conducting layer of the two-layer conducting film is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga 2 O 3 , ZnO-AI 2 O 3 and SnO 2 - Sb 2 O 3 .
- the second conducting layer of the two- layer conducting film is made of a precious metal.
- the second conducting layer is made of a porous material. Any convenient conducting material can be used in the second conducting layer. The use of a porous conducting layer substantially increases conversion efficiency of a solar cell due to extension of the effective interaction area of said porous conducting layer with the electrolyte.
- the organic solar cell further comprises an anti-reflection film formed on the surface of the first electrode opposite to the surface facing the second electrode.
- the organic solar cell further comprises an ultraviolet absorbing film formed on the surface of the first electrode opposite to the surface facing the second electrode.
- the ultraviolet absorbing film is made of a polymer.
- the organic ionic-crystalline photoelectric layer comprises light-scattering particles.
- the surface of the second electrode facing the first electrode is further coated with a thin layer of an electrocatalyst facing the electrolyte.
- the electrocatalyst is platinum. Platinum is the preferred material for the use as electro-catalyst, since it is an excellent catalyst for triiodide reduction.
- liquid electrolyte leakage and the possible corrosion of the platinum second electrode as a result of its interaction with the triiodide/iodide couple may be critical factors limiting the long- term performance of a dye-sensitized solar cell, especially at elevated temperatures.
- the liquid electrolyte is replaced by a polymer gel electrolyte.
- said electrolyte is a gel electrolyte containing a redox system.
- said gel electrolyte is made of 3-methoxypropionitrile (MPN)-based liquid electrolyte solidified by poly(vinylidene fluoride)-hexafluoropropylene (PVDF-HFP) copolymer.
- MPN 3-methoxypropionitrile
- PVDF-HFP poly(vinylidene fluoride)-hexafluoropropylene
- said electrolyte is a liquid electrolyte selected from the group of electrolytes comprising the redox couple of cerium(lll) sulfate and cerium(IV), redox couple of iodide (Q and triiodide (I 3 " ), redox couple of sodium bromide and bromine, and redox couple of lithium iodide and iodine in solution in one or more solvents selected from the group including water, N-methyloxazolidinone, nitromethane, propylene carbonate, ethylene carbonate, butyrolactone, dimethyl imidazolidine, N- methylpyrrolidine, and mixtures of said solvents.
- the organic solar cell further comprises an insulating porous layer situated between the organic ionic- crystalline photoelectric layer and the second electrode, wherein the electrolyte fills the pores of said insulating porous layer.
- Said insulating porous layer is required to prevent short circuit between the organic ionic-crystalline photoelectric layer and the second electrode.
- the insulating layer may, at the same time, act as a diffuse reflector that reflects light that has not yet been absorbed back into the organic ionic-crystalline photoelectric layer.
- the present invention provides an inexpensive and relatively simple fabrication technology of organic ionic-crystalline photoelectric layers.
- This example describes the preparation of an organic ionic-crystalline photoelectric layer from a solution of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid (carboxylic acid of base structure 48 in Table 4)
- Synthesis is performed via condensation of 2,5-dihydroxy-p-benzoquinone with o- phenylenediamine and 3,4-diaminobenzoic acid.
- a mixture of 1.40 g (0.01 mole) of 2,5-dihydroxy-p- benzoquinone and 1.08 g (0.01 mole) of o-phenylenediamine in 50 ml of acetic acid is stirred on boiling for 30 min. Then 1.52 g (0.01 mole) of 3,4-diaminobenzoic acid is added to the boiling mixture during 16 hours.
- the precipitate of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid is separated by filtration and washed with acetic acid.
- the isolated product is purified by crystallization from a mixture of acetic acid and DMF.
- the final product yield is 2.54 g.
- a solution of 1.0 g of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid in 35.0 g of deionized water is stirred for 5 min at a temperature of 2O 0 C. Then, 1.3 ml of a 10% aqueous ammonia solution is added and the mixture is stirred until complete dissolution.
- An appropriate substrate is sequentially washed with surfactants and with deionized water and then dried with airflow from a compressor.
- the pretreated substrate is coated with the above solution using Mayer rod #2.5 moved at a linear rate of 15 mm/s, a temperature of 20 0 C, and a relative humidity of 65%.
- the film is dried at the same humidity and temperature.
- the duration, humidity, and temperature of drying are selected so as to ensure 95% removal of solvent from the solution while retaining the porous structure of the dye-sensitizer layer after termination of the drying.
- the obtained film is characterized by measuring the specific resistance in the direction of rodlike supramolecules, which are approximately perpendicular to the substrate surface. The measured value of said specific resistance is in the range from 190 to 200 ohm-cm.
- the example describes the preparation of an organic ionic-crystalline photoelectric layer, which is similar to the procedure described in Example 1 B.
- the drying stage is replaced by an annealing.
- a solution of 1.0 g of 5a,6,13,13a-tetrahydroquinoxalino[2,3- b]phenazine-2 carboxylic acid in 35.0 g of deionized water is stirred for 5 min at a temperature of 20 0 C.
- 1.3 ml of a 10% aqueous ammonia solution is added and the mixture is stirred until complete dissolution.
- An appropriate substrate is sequentially washed with surfactants and with deionized water and then dried with airflow from a compressor.
- the pretreated substrate is coated with the above solution using Mayer rod #2.5 moved at a linear rate of 15 mm/s, a temperature of 20 0 C, and a relative humidity of 65%.
- the film is annealed at a temperature up to 370 0 C.
- the duration, humidity, and temperature of annealing are selected so as to ensure 95% removal of carboxylic groups from the organic ionic-crystalline photoelectric layer, while retaining the porous structure after termination of the annealing.
- the obtained film is characterized by measuring the specific resistance in the direction of rodlike supramolecules, which are approximately perpendicular to the substrate surface. The measured value of said specific resistance is in the range from 190 to 200 ohm-cm.
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Abstract
La présente invention concerne une cellule solaire organique sur la base d'une couche photoélectrique organique de cristal ionique. Dans un mode de réalisation préféré, la présente invention concerne un acide organique qui a comme structure générale la formule (I) et qui absorbe les rayons électromagnétiques d'au moins un sous-domaine spectral prédéterminé dans les limites d'une gamme de longueur d'ondes 400 à 3000 nm, et une solution aqueuse de son sel soluble dans l'eau est capable de former une couche photoélectrique de supramolécules de type « bâtonnet » sur un substrat. Selon un autre mode de réalisation préféré, la présente invention concerne une cellule solaire organique comprenant deux électrodes se faisant face, une couche photoélectrique organique de cristal ionique située entre les deux électrodes et en contact avec la première électrode, et un électrolyte qui est situé entre la couche photoélectrique organique de cristal ionique et la deuxième électrode et imprègne la couche photoélectrique organique de cristal ionique. La couche photoélectrique organique de cristal ionique absorbe les rayons électromagnétiques d'au moins un sous-domaine spectral prédéterminé dans les limites d'une gamme de longueur d'ondes de 400 à 3000 nm, et est constituée de supramolécules de type « bâtonnet » contenant des molécules d'au moins un composé organique de la formule structurelle générale (II)
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GB0524799A GB2433071A (en) | 2005-12-05 | 2005-12-05 | Organic acids comprising planar conjugated heterocyclic molecular system, & photoelectric layer thereof with rodlike supramolecules for use in solar cell |
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WO2009083532A2 (fr) * | 2007-12-28 | 2009-07-09 | Universite De La Mediterranee Aix-Marseille Ii | Nouveau procédé de préparation de dérivés de dihydro-tétraaza-pentacènes, les produits ainsi obtenus, et leurs utilisations |
CN103556176A (zh) * | 2013-10-30 | 2014-02-05 | 北京师范大学 | 对氮硫氧杂环化合物具有高活性的电催化阳极板及制备工艺 |
US9120803B2 (en) | 2012-06-07 | 2015-09-01 | Signa S.A. De C.V. | Processes for the preparation of sodium 5,14-dihydrotetraazapentacene polysulfonate, and intermediates thereof |
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CN110783463A (zh) * | 2018-07-30 | 2020-02-11 | 咸阳彩虹光电科技有限公司 | 一种用于太阳能电池的主动层结构及太阳能电池 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0887817A2 (fr) * | 1997-06-23 | 1998-12-30 | SHARP Corporation | Matériau photoélectrique utilisant un colorant organique photosensibilisant et son procédé de fabrication |
JP2000100484A (ja) * | 1998-09-24 | 2000-04-07 | Fuji Xerox Co Ltd | 光半導体電極、光電変換装置及び光電変換方法 |
US6150605A (en) * | 1998-09-22 | 2000-11-21 | Sharp Kabushiki Kaisha | Photovoltaic cell and manufacturing method thereof |
WO2002009197A1 (fr) * | 2000-07-21 | 2002-01-31 | North Carolina State University | Cellules solaires comportant des reseaux collecteurs de lumiere |
US20030232153A1 (en) * | 2002-06-07 | 2003-12-18 | Nazarov Victor V. | Sulfoderivatives of indanthrone, lyotropic liquid crystal system and anisotropic film on their base |
EP1564827A1 (fr) * | 2004-02-10 | 2005-08-17 | Université Libre De Bruxelles | Procédé pour la fabrication d'un objet multicouche mésogène |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2746441A1 (de) * | 1977-10-15 | 1979-04-19 | Cassella Ag | Faserreaktive phthalocyaninazofarbstoffe |
JPH0291164A (ja) * | 1988-09-29 | 1990-03-30 | Japan Carlit Co Ltd:The | 近赤外線を吸収する水性インキ |
ES2070937T3 (es) * | 1989-02-01 | 1995-06-16 | Sumitomo Chemical Co | Compuestos de dioxazina asimetricos reactivos con las fibras y su uso como tintes reactivos con las fibras. |
WO1994005025A1 (fr) * | 1992-08-17 | 1994-03-03 | Sandoz Ltd. | Utilisation d'azurants optiques et de phtalocyanines comme photosensibilisateurs |
DE19541985A1 (de) * | 1995-11-10 | 1997-05-15 | Dystar Textilfarben Gmbh & Co | Verfahren zur Herstellung von beidseitig amidierten Triphendioxazinfarbstoffen und neue Triphendioxazinfarbstoffe |
JP4236715B2 (ja) * | 1997-09-29 | 2009-03-11 | シャープ株式会社 | 光電変換材料用半導体の製造方法 |
GB9928542D0 (en) * | 1999-12-02 | 2000-02-02 | Xenova Ltd | Pharmaceutical compounds |
CN1366519A (zh) * | 2001-06-13 | 2002-08-28 | 陆鑑青 | 吩噁嗪类化合物及其药物组合物和其医药应用 |
GB0516800D0 (en) * | 2005-08-16 | 2005-09-21 | Kontrakt Technologies Ltd | Organic compound, semiconductor crystal film and method of producing thereof |
-
2005
- 2005-12-05 GB GB0524799A patent/GB2433071A/en not_active Withdrawn
-
2006
- 2006-12-05 WO PCT/GB2006/004547 patent/WO2007066098A1/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0887817A2 (fr) * | 1997-06-23 | 1998-12-30 | SHARP Corporation | Matériau photoélectrique utilisant un colorant organique photosensibilisant et son procédé de fabrication |
US6150605A (en) * | 1998-09-22 | 2000-11-21 | Sharp Kabushiki Kaisha | Photovoltaic cell and manufacturing method thereof |
JP2000100484A (ja) * | 1998-09-24 | 2000-04-07 | Fuji Xerox Co Ltd | 光半導体電極、光電変換装置及び光電変換方法 |
WO2002009197A1 (fr) * | 2000-07-21 | 2002-01-31 | North Carolina State University | Cellules solaires comportant des reseaux collecteurs de lumiere |
US20030232153A1 (en) * | 2002-06-07 | 2003-12-18 | Nazarov Victor V. | Sulfoderivatives of indanthrone, lyotropic liquid crystal system and anisotropic film on their base |
EP1564827A1 (fr) * | 2004-02-10 | 2005-08-17 | Université Libre De Bruxelles | Procédé pour la fabrication d'un objet multicouche mésogène |
Non-Patent Citations (4)
Title |
---|
ABE ET AL: "Novel photocathodic characteristics of organic bilayer composed of a phthalocyanine and a perylene derivative in a water phase containing a redox molecule", JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIAL ELECTROCHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 583, no. 2, 15 September 2005 (2005-09-15), pages 327 - 332, XP005051687, ISSN: 0022-0728 * |
G. TAMIZHAMI, J. P. DODELET, R. CÔTÉ, D. GRAVEL: "Photoelectrochemical Characterization of Thin Films of Perylenetetracarboxylic Acid Derivatives", CHEM. MATER., vol. 3, 1991, pages 1046 - 1053, XP002419868 * |
GUO M ET AL: "Photoelectrochemical studies of nanocrystalline TiO2 co-sensitized by novel cyanine dyes", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 88, no. 1, 15 June 2005 (2005-06-15), pages 23 - 35, XP004910570, ISSN: 0927-0248 * |
NOBUTSUGU MINAMI ET AL: "PHOTOELECTROCHEMICAL STUDY ON COPPER PHTHALOCYANINE FILMS", BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, VERLAG CHEMIE. WEINHEIM, DE, vol. 83, no. 5, May 1979 (1979-05-01), pages 476 - 481, XP000984102, ISSN: 0005-9021 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009083532A2 (fr) * | 2007-12-28 | 2009-07-09 | Universite De La Mediterranee Aix-Marseille Ii | Nouveau procédé de préparation de dérivés de dihydro-tétraaza-pentacènes, les produits ainsi obtenus, et leurs utilisations |
EP2078720A1 (fr) | 2007-12-28 | 2009-07-15 | Université de la Méditerranée - Aix-Marseille II | Nouveau procédé pour la préparation de dérivés de dihydrotétraazapentacènes, produits ainsi obtenus et leurs utilisations |
WO2009083532A3 (fr) * | 2007-12-28 | 2009-11-12 | Universite De La Mediterranee Aix-Marseille Ii | Nouveau procédé de préparation de dérivés de dihydro-tétraaza-pentacènes, les produits ainsi obtenus, et leurs utilisations |
US9120803B2 (en) | 2012-06-07 | 2015-09-01 | Signa S.A. De C.V. | Processes for the preparation of sodium 5,14-dihydrotetraazapentacene polysulfonate, and intermediates thereof |
CN103556176A (zh) * | 2013-10-30 | 2014-02-05 | 北京师范大学 | 对氮硫氧杂环化合物具有高活性的电催化阳极板及制备工艺 |
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