WO2007048313A1 - Pate d'abrasion chimique-mecanique pour couche barriere - Google Patents

Pate d'abrasion chimique-mecanique pour couche barriere Download PDF

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Publication number
WO2007048313A1
WO2007048313A1 PCT/CN2006/002617 CN2006002617W WO2007048313A1 WO 2007048313 A1 WO2007048313 A1 WO 2007048313A1 CN 2006002617 W CN2006002617 W CN 2006002617W WO 2007048313 A1 WO2007048313 A1 WO 2007048313A1
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Prior art keywords
chemical mechanical
mechanical polishing
acid
polishing slurry
polyacrylic
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PCT/CN2006/002617
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English (en)
French (fr)
Inventor
Peter Weihong Song
Judy Jianfen Jing
Yuan Gu
Sunny Chun Xu
Michael Ying Song
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Anji Microelectronics (Shanghai) Co., Ltd
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Publication of WO2007048313A1 publication Critical patent/WO2007048313A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing slurry, and more particularly to a chemical mechanical polishing slurry for a barrier layer.
  • the multilayer copper wiring in the current large scale integrated circuit chip also uses Ta or TaN as a barrier layer, so that chemical mechanical polishing (CMP) slurry for polishing the Ta or TaN barrier layer has appeared one after another.
  • CMP chemical mechanical polishing
  • Materials such as: US 6,719,920 discloses a polishing slurry for a barrier layer; 118 6,503, 4 ⁇ discloses a polishing layer of a barrier layer containing an organic additive; US 6,638,326 discloses a A chemical mechanical planarization composition for Ta and TaN, CN 02116761.3 discloses a chemical mechanical global planarization polishing solution of copper and tantalum in a multi-scale integrated circuit multilayer copper wiring.
  • these polishing paddles have local and overall corrosion, high defect rate, and unreasonable polishing selectivity of different substrates. Therefore, there is an urgent need to develop a new chemical mechanical polishing slurry for a barrier layer. Summary of invention
  • An object of the present invention is to provide a chemical mechanical polishing slurry for a barrier layer in order to solve the above problems in the prior art.
  • the above object of the present invention is achieved by the following technical solutions:
  • the chemical mechanical polishing slurry for a barrier layer of the present invention comprises abrasive particles, an organic phosphonic acid, a polyacrylic acid and/or a salt thereof and/or a polyacrylic acid. Copolymers, oxidizing agents and carriers.
  • the concentration of the abrasive particles is 1 to 10%
  • the concentration of the organic phosphonic acid is 0.01 to 1%
  • the polyacrylic acid and/or a salt thereof and/or a polyacrylic acid is 0.01 to 0.5%
  • the concentration of the oxidizing agent is 0.001 to 1%
  • the carrier is the balance, and the above % means the weight percentage of the entire chemical mechanical polishing slurry.
  • the size of the abrasive particles is preferably from 20 to 200 nm, more preferably from 30 to 100 nm, most preferably from 70 nm; the abrasive particles may be various abrasive particles of the prior art, preferably silica, alumina, oxidation Niobium and/or polymer particles (e.g., polyethylene, polytetrafluoroethylene), more preferably silica.
  • the organic phosphonic acid is preferably 2-phosphonic acid butane-1,2,4-tricarboxylic acid, ethylenediaminetetramethylenephosphonic acid and/or diethylenetriamine pentamethylphosphonic acid.
  • the polyacrylic acid preferably has a molecular weight of 1,000 to 20,000, more preferably 2,000 to 5,000; and the polyacrylic copolymer preferably has a molecular weight of 1,000 to 20,000, more preferably 2,000 ⁇ 5,000.
  • the polyacrylic acid may be various polyacrylic substances, preferably polyacrylic acid and/or polymaleic acid and other polyacrylic substances, and the salts are potassium salts, ammonium salts and/or sodium.
  • the polyacrylic acid copolymer is a polyacrylic acid-polyacrylate copolymer and/or a polyacrylic acid-polymaleic acid copolymer and other polyacrylic acid copolymers; more preferably ammonium polyacrylate.
  • the oxidizing agent may be various oxidizing agents in the prior art, preferably hydrogen peroxide, urea hydrogen peroxide, peroxyacetic acid, benzoyl peroxide, potassium persulfate and/or ammonium persulfate, more It is hydrogen peroxide.
  • the pH of the chemical mechanical polishing slurry can be 2.0 ⁇ 4.0, 'preferably 3.0, the pH adjusting agent used may be potassium hydroxide, nitric acid, ethanolamine and/or triethanolamine or the like.
  • the carrier is preferably water.
  • the chemical mechanical polishing slurry of the present invention may further comprise other additives such as surfactants, stabilizers, bactericides, complexing agents and/or inhibitors, etc., all of which may be referred to the prior art.
  • the positive progress of the present invention is as follows:
  • the chemical mechanical polishing slurry of the present invention 1) can reduce the amount of abrasive particles and significantly reduce the defects; 2) can increase the removal rate of the ruthenium, reduce the removal rate of copper, and thereby obtain different substrates. Polishing selectivity; 3) It can prevent local and overall corrosion during metal polishing, reduce surface contamination of the substrate, and improve product yield.
  • Figure 1 is a micrograph of the surface of a blank germanium wafer before polishing
  • Figure 2 is a micrograph of the surface of a blank ruthenium wafer after polishing
  • Figure 3 is a micrograph of the copper wire on the surface of the test wafer after polishing (TEOS in the figure refers to Si0 2 );
  • Figure 4 is a micrograph of the copper region on the surface of the test wafer after polishing (TEOS in the figure means Si0 2 );
  • Figure 5 is an SEM image of the surface of the test wafer after polishing;
  • Figure 6 is an SEM image of the cross section of the test wafer after polishing.
  • PBTCA 2-phosphonium butyrate-1,2,4-tricarboxylic acid
  • EDTMP ethylenediaminetetramethylenephosphonic acid
  • DTPMP diethylenetriamine pentamethylphosphonic acid
  • PAN ammonium polyacrylate
  • the remaining component of the above chemical mechanical polishing slurry is water; 1 ( refer to Comparative Example 1 ⁇ .
  • the materials are placed in the following order: abrasive particles, half of the amount of deionized water, organic phosphonic acid, polyacrylic acid and/or its copolymer, ⁇ 2 2 2 are sequentially added to the reactor and stirred evenly, and deionized water is added. Finally, adjust the pH to the desired pH with a pH adjuster (20% hydrazine or dilute HN0 3 according to the pH value), continue stirring to a uniform fluid, and obtain chemistry for 10 minutes. Mechanical polishing slurry.
  • a pH adjuster (20% hydrazine or dilute HN0 3 according to the pH value
  • the chemical mechanical polishing slurry of the present invention can be At lower abrasive particle concentrations, the removal rate of ruthenium is increased by the addition of organic phosphonic acid, the removal rate of copper is changed by adjusting the concentration of oxidant, the amount of contaminants on the surface can be reduced by the addition of polymeric surfactants, and the grinding can be adjusted.
  • the particle concentration and the change of the concentration of the polymer adjust the removal rate of SiO 2 to control the polishing selection ratio of different substrates to a certain extent to meet the needs of different processes.
  • Lower abrasive particle concentrations can significantly reduce defects and prevent local and overall corrosion during metal polishing, reduce substrate surface contamination, and increase product yield. Blank before and after polishing
  • Figs. 1 and 2 The surface micrograph of the Ta wafer is shown in Figs. 1 and 2 (Fig. 2 is a surface micrograph of the blank Ta wafer after polishing the chemical mechanical polishing slurry of Example 1), from which it can be seen that the chemical mechanical polishing slurry of the present invention is used.
  • the pitting on the surface of the Ta wafer can be significantly less.
  • Def. indicates surface corrosion or other contaminants and their residues.
  • 3 to 6 are the surface conditions of the wafer after the test wafer polishing (they are the surface condition diagrams of the test wafer after polishing the chemical mechanical polishing slurry of Examples 2 to 4, respectively), as can be seen from the use of the present invention.
  • the copper wire, copper area and substrate surface of the test wafer surface are free from contamination, corrosion and other residues, which can significantly improve the yield of the product; the SEM image of the test wafer surface also shows that the wafer surface is free of contamination; The cross-sectional SEM image shows that the copper wire has no obvious defects.
  • the chemical mechanical polishing slurry 1) of the invention can reduce the amount of abrasive particles and significantly reduce the defects; 2) can improve the removal rate of the ruthenium, reduce the removal rate of copper, and thereby obtain the polishing selectivity of different substrates; 3) It can prevent local and overall corrosion during metal polishing, reduce surface contamination of the substrate, and improve product yield.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

用于阻挡层的化孥机械抛光浆料 技术领域
本发明涉及一种化学机械抛光浆料，尤其涉及一种用于阻挡层的化学机 械抛光浆料。 技术背景
随着微电子技术的发展，甚大规模集成电路芯片集成度 β达几十亿个元 器件， 特征尺寸已经进入纳米级， 这就要求微电子工艺中的几百道工序， 尤 其是多层布线、衬底、介质必须要经过化学机械平坦化。甚大规模集成布线 正由传统的 A1向 Cu转化。与 A1相比， Cu布线具有电阻率低， 抗电迁移能 率高， RC延迟时间短， 可使布层数减少一半， 成本降低 30%， 加工时间缩 短 40%的优点。 Cu布线的优势已经引 ¾^全世界广泛的关注。
为了保证 Cu布线与介质的特性， 目前甚大规模集成电路芯片中多层铜 布线还用到 Ta或 TaN作阻挡层， 因此相继出现了用来抛光 Ta或 TaN阻挡 层的化学机械抛光（CMP)浆料， 如： US 6,719,920专利公开了一种用于阻 挡层的抛光浆料； 118 6,503，4^专利公开了一种 阻挡层的抛光 料，该抛 光浆料中含有有机添加剂； US 6,638,326公开了一种用于 Ta和 TaN的化学 机械平坦化组合物， CN 02116761.3 公幵了一种超大规模集成电路多层铜布 线中铜与钽的化学机械全局平面化抛光液。但这些抛光桨料存在着局部和整 体腐蚀， 缺陷率较高， 不同基底的抛光选择性不合理等缺陷。 因此迫切需要 开发出新的用于阻挡层的化学机械抛光浆料。 发明概要
本发明的目的是为了上述现有技术中的问题，提供一种用于阻挡层的化 学机械抛光浆料。
本发明的上述目的是通过下列技术方案来实现的：本发明的用于阻挡层 的化学机械抛光浆料包括研磨颗粒、 有机膦酸、 聚丙烯酸类和 /或其盐类和 /、 或聚丙烯酸类共聚物、 氧化剂和载体。
在本发明的一较佳实施例中， 该研磨颗粒的浓度为 1〜10%, 该有机膦 酸的浓度为 0.01〜1%， 该聚丙烯酸类和 /或其盐类和 /或聚丙烯酸类共聚物的 浓度为 0.01〜0.5%， 该氧化剂的浓度为 0.001〜1%， 该载体为余量， 以上％ 均指占整个化学机械抛光浆料的重量百分比。
该研磨颗粒的尺寸较佳地为 20〜200nm， 更佳地为 30〜100nm， 最佳地 为 70nm; 该研磨颗粒可为现有技术中的各种研磨颗粒， 优选氧化硅、 氧化 铝、 氧化铈和 /或聚合物颗粒（如： 聚乙烯、 聚四氟乙烯）， 更优选氧化硅。
所述的有机膦酸较佳地为 2-膦酸丁烷基 -1,2，4-三羧酸， 乙二胺四甲叉膦 酸和 /或二乙烯三胺五甲叉膦酸。
所述的聚丙烯酸类的分子量较佳地为 1,000〜20,000， 更佳地为 2,000〜 5,000； 所述的聚丙烯酸类共聚物的分子量较佳地为 1，000〜20，000， 更佳地 为 2,000〜5,000。 所述的聚丙烯酸类可为各种聚丙烯酸类物质， 较佳地为聚 丙烯酸和 /或聚马来酸及其它聚丙烯酸类物质， 所述的盐类为钾盐、 铵盐和 / 或钠盐， 所述的聚丙烯酸类共聚物为聚丙烯酸-聚丙烯酸酯共聚物和 /或聚丙 烯酸-聚马来酸共聚物及其它聚丙烯酸类共聚物； 更佳地为聚丙烯酸铵。
所述的氧化剂可为现有技术中的各种氧化剂， 较佳地为过氧化氢、过氧 化氢脲、过氧乙酸、过氧化苯甲酰、过硫酸钾和 /或过硫酸铵， 更加地为过氧 化氢。
在本发明的一较佳实施例中， 该化学机械抛光浆料的 pH值可为 2.0〜 4.0， '优选 3.0， 所用的 pH调节剂可为氢氧化钾、 硝酸、 乙醇胺和 /或三乙醇 胺等等。
在本发明中， 所述的载体较佳地为水。
本发明的化学机械抛光浆料还可以包括其他添加剂， 如表面活性剂、稳 定剂、 杀菌剂、 络合剂和 /或抑制剂等等， 这些添加剂均可参照现有技术。
本发明的积极进步效果在于： 本发明的化学机械抛光浆料 1 ) 可以降低 研磨颗粒的用量， 使缺陷明显下降； 2)可以提高钽的去除速率， 降低铜的 去除速率， 从而获得不同基底的抛光选择性； 3 ) 可以防止金属抛光过程中 产生的局部和整体腐蚀， 减少衬底表面污染物， 提高产品良率。
附图说明
图 1为抛光前空白钽晶片的表面的显微镜图；
图 2为抛光后空白钽晶片的表面的显微镜图；
图 3为抛光后测试晶片表面的铜线的显微镜图 （图中的 TEOS是指 Si02); 图 4为抛光后测试晶片表面的铜区的显微镜图 （图中的 TEOS是指 Si02); 图 5为抛光后测试晶片表面的 SEM图； ' 图 6为抛光后测试晶片剖面的 SEM图。
发明内容
下面使用非限制性实施例来详细说明本发明。
实施例 1〜15以及对比实施例 1G 表 1
Figure imgf000006_0001
备注： PBTCA: 2-膦酸丁垸基 -1,2,4-三羧酸， EDTMP: 乙二胺四甲叉膦酸， DTPMP:二乙烯三胺五甲叉膦酸； PAN:聚丙烯酸铵， PAA:聚丙烯酸， PAE: 聚丙烯酸-聚丙烯酸酯共聚物； 上述化学机械抛光浆料的其余成分为水； 1( 是指对比实施例 1ΰ。
将各物料按下列顺序： 研磨颗粒、一半用量的去离子水、有机膦酸、 聚 丙烯酸类和 /或其共聚物、 Η202的顺序依次加入反应器中并搅拌均匀， 补充 去离子水， 最后用 pH调节剂 （20%ΚΟΗ或稀 HN03， 根据 pH值的需要进 行选择）调节到所需 pH值继续搅拌至均匀流体，静止 10分钟即可得到化学 机械抛光浆料。
效果实施例 1
对空白 Ta、 Cu及 Si(¾晶片分别用上述实施例 1〜15以及对比实施例 1Q 的化学机械抛光浆料进行抛光，抛光条件相同，抛光参数如下： Logitech. PM5 抛光垫， 向下压力 2psi， 转盘转速 /抛光头转速 =60/80rpm， 抛光时间 120s， 化学机械抛光桨料流速 100mL/min。 抛光结果见表 2。
表 2
Figure imgf000007_0001
备注： Surf.表示基底表面的污染物情况。
结果表明: 与对比实施例 1Q相比， 本发明的化学机械抛光浆料可以在 较低的研磨颗粒浓度下， 通过加入有机膦酸提高钽的去除速率， 通过调节氧 化剂的浓度改变铜的去除速率，通过加入聚合物表面活性物质可以降低表面 的污染物的数量， 也可以调节研磨颗粒浓度和改变聚合物的浓度调节 Si02 的去除速率， 从而在一定程度上控制不同基底的抛光选择比， 满足不同制程 的需要。较低的研磨颗粒浓度可使缺陷明显下降并能防止金属抛光过程中产 生的局部和整体腐蚀， 减少衬底表面污染物， 提高产品良率。 抛光前后空白
Ta晶片表面显微镜图见图 1和 2 (图 2为实施例 1的化学机械抛光浆料抛光 后的空白 Ta晶片表面显微镜图）， 从中可以看出， 使用本发明的化学机械抛 光浆料后的 Ta晶片表面的点蚀可以明显较少。
效果实施例 2
对已溅射 Ta阻挡层 /电镀铜的二氧化硅测试晶片， 抛光铜后， 再分别用 上述实施例 2〜4、 6的化学机械抛光浆料进行抛光， 抛光条件相同， 抛光参 数如下： Logitech. PM5 抛光垫， 向下压力 2psi， 转盘转速 /抛光头转速 =60/80rpm, 抛光时间 120s， 化学机械抛光浆料流速 100mL/min。 抛光结果 见表 3。
表 3
Figure imgf000008_0001
Def.表示表面腐蚀或其它污染物及其残留物等。
结果表明：本发明的化学机械抛光浆料可以明显地减小测试晶片表面的 凹陷的大小， 测试晶片表面无腐蚀、 污染物及其它残留物。 图 3〜6为测试 晶片抛光后的晶片表面情况（它们分别是实施例 2〜4、 6的化学机械抛光浆 料抛光后的测试晶片的表面情况图）， ：从中可以看出， 使用本发明的化学机 械抛光浆料后的测试晶片表面的铜线、铜区和基底表面均无污染、腐蚀和其 他残留物， 可以显著地提高产品良率; 测试晶片表面 SEM图也显示晶片表 面无污染； 测试晶片剖面 SEM图显示铜线无明显缺陷。
结论： 本发明的化学机械抛光浆料 1 )可以降低研磨颗粒的用量， 使缺 陷明显下降； 2)可以提高钽的去除速率， 降低铜的去除速率， 从而获得不 同基底的抛光选择性； 3)可以防止金属抛光过程中产生的局部和整体腐蚀， 减少衬底表面污染物， 提高产品良率。
上述实施例涉及到的原料均为市售。

Claims

权利要求
1、一种用于阻挡层的化学机械抛光浆料， 其包括研磨颗粒、 有机膦酸、 聚丙烯酸类和 /或其盐类和 /或聚丙烯酸类共聚物、 氧化剂和载体。
2、 根据权利要求 1所述的化学机械抛光桨料， 其特征在于该研磨颗粒 的浓度为 1〜10%，该有机膦酸的浓度为 0.01〜1%，该聚丙烯酸类和 /或其盐 类和 /或聚丙烯酸类共聚物的浓度为 0.01〜0.5%， 该氧化剂的浓度为 0.001〜 1%， 该载体为余量。
3、 根据权利要求 1所述的化学机械抛光浆料， 其特征在于该研磨颗粒 的尺寸为 20〜200nm。
4、 根据权利要求 3所述的化学机械抛光浆料， 其特征在于该研磨颗粒 的尺寸为 30〜； I00nm。
5、根据权利要求 1〜4任一项所述的化学机械抛光浆料， 其特征在于所 述的有机膦酸为 2-膦酸丁烷基 -1,2,4-三羧酸， 乙二胺四甲叉膦酸和 /或二乙烯 三胺五甲叉膦酸。
6、根据权利要求 1〜4任一项所述的化学机械抛光浆料， 其特征在于所 述的聚丙烯酸类的分子量为 1,000〜20';000，所述的聚丙烯酸类共聚物的分子 量为 1,000〜20,000。
7、 根据权利要求 6所述的化学机械抛光浆料， 其特征在于所述的聚丙 烯酸类的分子量为 2,000〜5,000， 所述的聚丙烯酸类共聚物的分子量为 2,000〜5，000。
' 8、根据权利要求 1〜4任一项所述的化学机械抛光浆料， 其特征在于所 述的聚丙烯酸类为聚丙烯酸和 /或聚马来酸， 所述的盐为钾盐、 铵盐和 /或钠 盐，所述的聚丙烯酸类共聚物为聚丙烯酸-聚丙烯酸酯共聚物和 /或聚丙烯酸- 聚马来酸共聚物。 '
9、根据权利要求 1〜4任一项所述的化学机械抛光浆料， 其特征在于所 述的氧化剂为过氧化氢、 过氧化氢脲、 过氧乙酸、 过氧化苯甲酰、过硫酸钾 和 /或过硫酸铵。
10、 根据权利要求 1〜4任一项所述的化学机械抛光柴料， 其特征在于 该研磨颗粒为氧化硅、 氧化铝、 氧化铈和 /或聚合物颗粒。
11、 根^权利要求 1〜4任一项所述的化学机械抛光浆料， 其特征在于 该化学机械抛光浆料的 pH值为 2.0〜4.0。
12、 根据权利要求 1〜4任一项所述的化学机械抛光浆料， 其特征在于 该化学机械抛光浆料还包括表面活性剂、 稳定剂和 /或杀菌剂。
PCT/CN2006/002617 2005-10-28 2006-10-08 Pate d'abrasion chimique-mecanique pour couche barriere WO2007048313A1 (fr)

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CN104745089A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种用于阻挡层平坦化的化学机械抛光液及其使用方法
CN105950021B (zh) * 2016-07-19 2018-08-17 苏州溶煋新材料科技有限公司 一种用于蓝宝石基板抛光的氧化铝基抛光液及其制备方法

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