WO2007034808A1 - Substrat et son procédé de fabrication - Google Patents

Substrat et son procédé de fabrication Download PDF

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Publication number
WO2007034808A1
WO2007034808A1 PCT/JP2006/318586 JP2006318586W WO2007034808A1 WO 2007034808 A1 WO2007034808 A1 WO 2007034808A1 JP 2006318586 W JP2006318586 W JP 2006318586W WO 2007034808 A1 WO2007034808 A1 WO 2007034808A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
ultrafine particles
diamond
growth substrate
manufacturing
Prior art date
Application number
PCT/JP2006/318586
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English (en)
Japanese (ja)
Inventor
Junji Watanabe
Mutsumi Touge
Masahiro Shimizu
Original Assignee
National University Corporation Kumamoto University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University Corporation Kumamoto University filed Critical National University Corporation Kumamoto University
Priority to JP2007536507A priority Critical patent/JPWO2007034808A1/ja
Publication of WO2007034808A1 publication Critical patent/WO2007034808A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • C23C24/045—Impact or kinetic deposition of particles by trembling using impacting inert media

Definitions

  • the present invention relates to a substrate having a film having a desired pattern made of a high hardness material such as diamond, and a method for manufacturing the same.
  • Diamond has material properties such as high mechanical strength and mechanical stability, and thus has been studied for application to a substrate of a semiconductor element and a part of a circuit of an optical communication component.
  • the In the micromachining field a diamond micromachine tool is required to perform mechanical force.
  • the diamond film When used in these applications, the diamond film must be formed in various micropattern shapes (fine shapes).
  • Patent Document 1 Japanese Patent Laid-Open No. 6-275575
  • the conventional method described above has the following problems.
  • the first method it is difficult to precisely pattern diamond because diamond has the above-mentioned material properties
  • the second method is still established as a caching technology. Have been! There is a problem of /, etc.
  • the third method the process was complicated and costly.
  • the present invention has been made in view of serious problems, and a first object thereof is to process a high-hardness material such as diamond into a desired pattern with high accuracy and low cost. It is to provide a method for manufacturing a substrate.
  • a second object of the present invention is to provide a high-density and high-quality substrate obtained by the above method.
  • a method of manufacturing a substrate according to the present invention includes a step of selectively embedding a large number of ultrafine particles in a desired pattern on the surface of a growth substrate, and a film obtained by growing the large number of ultrafine particles embedded in the growth substrate. Forming the step.
  • ultrafine particles such as diamond are selectively embedded in a desired pattern on the growth substrate, and then the ultrafine particles are grown using this as a nucleus to form the desired pattern.
  • a film having the following shape is formed.
  • a method of embedding ultrafine particles in a predetermined position of the substrate there is a method in which a large number of ultrafine particles (for example, diamond) are arranged on a growth substrate, and ultrasonic vibrations are applied by pressurizing the ultrafine particles. More specifically, as a first method, a pressurized sphere is placed on a number of ultrafine particles arranged on the growth substrate, and ultrasonic vibrations in the vertical direction are applied to the growth substrate. As a second method for embedding ultrafine particles, a pressurized sphere is placed on a number of ultrafine particles arranged on the growth substrate, and ultrasonic vibration is applied to the growth substrate in the in-plane direction. There is a method of embedding ultrafine particles in a linear pattern by moving the pressure ball linearly on the growth substrate.
  • a pressurized sphere is placed on a number of ultrafine particles arranged on the growth substrate, and ultrasonic vibrations are applied to the growth substrate in the in-plane direction.
  • the substrate in the form of dots, lines, or a desired pattern. It is also possible to embed ultrafine particles on the entire surface of the substrate by scanning the steel ball over the entire surface of the substrate.
  • the pressure sphere for example, stainless steel, Zr02, A12 03, or other metal spheres, glass spheres, ceramic spheres, or resin balls can be used.
  • a diamond film is formed as a film, it is preferable to use a plasma CVD method using hydrogen monomethane (H 2 —CH 4) -based gas.
  • H 2 —CH 4 hydrogen monomethane
  • diamond nuclei are always formed in the areas where ultrafine particles exist, and a substrate with an extremely high density and high quality diamond film must be produced at a faster growth rate than before. Can do.
  • a silicon (Si) substrate can be used as the growth substrate.
  • the growth substrate is removed and the film itself is used as a substrate, whereby a substrate made of, for example, diamond can be manufactured.
  • the substrate manufacturing method of the present invention after a large number of ultrafine particles are selectively embedded in a desired pattern in a growth substrate, the embedded ultrafine particles are grown to form a film. Therefore, a film such as diamond, which has heretofore been difficult to form, can be easily produced in a desired shape and with high density and high quality. Therefore, by using the substrate provided with this diamond film as, for example, an optical-electronic composite device substrate, its optical characteristics and semiconductor characteristics can be improved.
  • a film such as diamond is formed on the growth substrate, and then the growth substrate is removed and the remaining film is used as the substrate, a substrate having a desired shape that can be used with diamond or the like can be easily manufactured. be able to. Thus, for example, it is possible to produce a micromachine tool with excellent durability that is composed of only diamond.
  • FIG. 1 is a diagram showing a manufacturing process of a substrate having a diamond film according to an embodiment of the present invention.
  • FIG. 2 is a diagram for explaining an embedding process of ultrafine particles.
  • FIG. 3 is a perspective view for specifically explaining the process shown in FIG. 2.
  • FIG. 4 is a top view illustrating a process following FIG. 3.
  • FIG. 5 is a diagram for explaining a method of embedding ultrafine particles in an arbitrary pattern shape.
  • FIG. 1 shows a method for manufacturing a substrate having a diamond film according to an embodiment of the present invention.
  • the ultrafine particles 11 are selectively embedded in the substrate 10 in a desired pattern.
  • the growth substrate 10 for example, a 15 mm ⁇ 15 mm silicon (Si) substrate or the like is used. Can do.
  • the ultrafine particles 11 it is preferable to use those having a diameter of 5 nm to several tens of nm, for example. By using such nano-sized ultrafine particles 11, high-density embedding becomes possible, and the growth rate of diamond nuclei and the like described later is improved.
  • a large number of ultrafine particles embedded in the growth substrate 10 as described above are grown using a CVD method, for example, a plasma CVD method. Forming an oxide film.
  • a CVD method for example, a plasma CVD method.
  • the reactive gas G for example, hydrogen-methane (H2-CH4) gas can be used.
  • H2-CH4 gas can be used as the reactive gas G.
  • diamond nuclei 12 are first formed starting from ultrafine particles 11 (FIG. 1 (B)).
  • the nuclei 12 have a diameter of 10 nm to 100 nm.
  • diamond particles 13 are formed starting from these nuclei 12 (FIG. 1 (C)).
  • the particle 13 refers to a particle having a diameter of several tens of nm to several hundreds of nm.
  • a diamond crystal 14A grows from the particle 13 to form a film 14 (FIG. 1D).
  • the substrate 15 having the diamond film 14 on the surface is completed.
  • the embedding of the ultrafine particles 11 into the growth substrate 10 can be realized by, for example, the following method. That is, as shown in FIG. 2, a large number of ultrafine particles 11 are dispersed on the surface of the growth substrate 10, and then a pressure ball (steel ball 20) is placed on these ultrafine particles 11. Then, a vertical ultrasonic vibration VI is applied to the growth substrate 10 to vibrate the steel ball 20 in the same direction.
  • liquid L in which ultrafine particles 11 are suspended in ethanol may be used and applied to growth substrate 10.
  • the ultrafine particles 11 are dispersed without being scattered.
  • the material and size of the pressure ball are not particularly limited, but here, for example, a stainless steel material having a diameter of 0.2 mm to 3 mm is used.
  • the ultrasonic vibration VI for example, those having a low energy of 10 W ⁇ : LOOW ⁇ degree (frequency is 35 ⁇ ⁇ 1 ⁇ ) are preferable. As a result, the ultrafine particles 11 are embedded in the growth substrate 10 at a high density.
  • the L-shaped guides 21 and 21 shown in FIG. 3A are placed on the growth substrate 10 with a predetermined gap 21A therebetween (FIG. 3B). After that, a large number of ultrafine particles 11 were sprayed in the gap 21 A. After that, the steel ball 20 is placed, and the ultrasonic vibration VI is applied to the growth substrate 10 and, as shown in FIG. 4, the ultrasonic vibration V2 is also applied to the growth substrate 10 in the in-plane direction. Is moved linearly along the gap 21A. As a result, pressure is applied to the ultrafine particles 11 so that the ultrafine particles 11 are embedded linearly in the growth substrate 10.
  • the shape of the guides 21, 21 may be changed according to the embedding pattern.
  • the ultrafine particles 11 can be embedded in the shape of dots by moving the steel ball 20 up and down inside.
  • a frame-shaped guide is used. What is necessary is just to give the vibration of a direction.
  • the ultrafine particles 11 may be embedded using an apparatus 30 as shown in FIG. Specifically, a bath 32 containing a liquid L containing ultrafine particles 11 is placed on a stage 31 movable in the X and Y axis directions, and the growth substrate 10 is put into the bath 32. Thereafter, the steel ball 20 connected to the ultrasonic vibrator 34 through the thin wire spring 33 is ultrasonically vibrated, and the stage 31 is operated to move the steel ball 20 to a desired position on the growth substrate 10. . Also in this case, the diameter of the steel ball 20 is preferably in the above range (0.2 mm to 3 mm), for example.
  • the ultrafine particles 11 are embedded by directly vibrating the steel ball 20 itself.
  • an ultrasonic vibration is applied to the bathtub 32 side, so that the steel ball 20 vibrates as a result. Oh ,.
  • the ultrafine particles 11 are grown.
  • the substrate 15 having a desired shape and having a high-density and high-quality diamond film 14 can be formed easily and at high speed.
  • the ultrafine particles 11 are embedded in the growth substrate 10 by using the ultrasonic vibration VI of the steel ball 20, it can be easily realized. Therefore, when the substrate 15 provided with the diamond film 14 is used as an opto-electronic composite device substrate, its optical characteristics and semiconductor characteristics are improved.
  • the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment and can be variously modified.
  • the growth base The diamond film 14 was formed on the plate 10 and used as the substrate 15.However, after the diamond film 14 was formed, the growth substrate 10 was removed so that the remaining film 14 itself became the substrate (diamond substrate). You may make it do.
  • an etching method or the like can be used as a specific method for removing the growth substrate 10. Thereby, a diamond substrate having a desired shape and a high density and high quality can be obtained. Therefore, for example, if the diamond film 14 is formed in accordance with the shape of the micromachine tool, a micromachine tool having a diamond force can be easily manufactured.
  • optical windows in a wide wavelength range from X-rays to infrared rays, wear-resistant parts on sliding parts of machines, and some of high-end ornaments with diamonds with excellent durability.
  • Ultra fine particles are not limited to dunamond.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Cette invention concerne un substrat, qui possède une forme souhaitée et un film de diamant à haute densité et de grande qualité, un procédé de fabrication d’un tel substrat et un substrat diamanté. Une multitude de particules de diamant ultrafines (11) sont réparties sur un substrat de croissance (substrat de silicium) (10). Des billes d’acier de diamètre compris entre 1 et 3 mm sont, par exemple, disposées sur les particules ultrafines (11) puis, une vibration ultrasonore dans un sens vertical est appliquée au substrat de croissance (10). Les billes d’acier vibrent et les particules ultrafines (11) sont intégrées, par la pression appliquée, au substrat de croissance (10) dans un motif souhaité. Ensuite, la croissance des particules ultrafines (11) selon un procédé DCPV entraîne la formation d’un film de diamant (14). Le retrait du substrat de croissance (10) permet de n’obtenir que le film de diamant (14) (substrat diamanté).
PCT/JP2006/318586 2005-09-20 2006-09-20 Substrat et son procédé de fabrication WO2007034808A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007536507A JPWO2007034808A1 (ja) 2005-09-20 2006-09-20 基板およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-271920 2005-09-20
JP2005271920 2005-09-20

Publications (1)

Publication Number Publication Date
WO2007034808A1 true WO2007034808A1 (fr) 2007-03-29

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WO (1) WO2007034808A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009291911A (ja) * 2008-06-06 2009-12-17 Disco Abrasive Syst Ltd ラップ装置
JP2014009388A (ja) * 2012-06-29 2014-01-20 Toyota Motor Corp 表面処理方法
WO2023147255A1 (fr) * 2022-01-27 2023-08-03 Applied Materials, Inc. Nucléation in situ pour dépôt de film de diamant nanocristallin

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132691A (ja) * 1990-09-25 1992-05-06 Nec Corp ダイヤモンド微粉末を種結晶とする気相法ダイヤモンド薄膜の製造法
JPH1081586A (ja) * 1996-09-03 1998-03-31 Sumitomo Electric Ind Ltd 気相合成ダイヤモンドおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132691A (ja) * 1990-09-25 1992-05-06 Nec Corp ダイヤモンド微粉末を種結晶とする気相法ダイヤモンド薄膜の製造法
JPH1081586A (ja) * 1996-09-03 1998-03-31 Sumitomo Electric Ind Ltd 気相合成ダイヤモンドおよびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WATANABE J. ET AL.: "Silicon Kiban no Maeshori Gijutsu to CVD Diamond Usumaku no Tokusei no Kankei", 2004 NENDO SEIMITSU KOGAKUKAI MIYAZAKI CHIHO KOENKAI, 2004, pages 55 - 56 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009291911A (ja) * 2008-06-06 2009-12-17 Disco Abrasive Syst Ltd ラップ装置
JP2014009388A (ja) * 2012-06-29 2014-01-20 Toyota Motor Corp 表面処理方法
WO2023147255A1 (fr) * 2022-01-27 2023-08-03 Applied Materials, Inc. Nucléation in situ pour dépôt de film de diamant nanocristallin
US11946134B2 (en) 2022-01-27 2024-04-02 Applied Materials, Inc. In situ nucleation for nanocrystalline diamond film deposition

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Publication number Publication date
JPWO2007034808A1 (ja) 2009-03-26

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