WO2006128375A1 - Structure de conditionnement d'un composant electroluminescent a semiconducteur - Google Patents

Structure de conditionnement d'un composant electroluminescent a semiconducteur Download PDF

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Publication number
WO2006128375A1
WO2006128375A1 PCT/CN2006/001165 CN2006001165W WO2006128375A1 WO 2006128375 A1 WO2006128375 A1 WO 2006128375A1 CN 2006001165 W CN2006001165 W CN 2006001165W WO 2006128375 A1 WO2006128375 A1 WO 2006128375A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor light
package structure
light emitting
lower base
emitting device
Prior art date
Application number
PCT/CN2006/001165
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English (en)
French (fr)
Inventor
Jen-Shyan Chen
Original Assignee
Jen-Shyan Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jen-Shyan Chen filed Critical Jen-Shyan Chen
Priority to US11/921,176 priority Critical patent/US7777237B2/en
Priority to AU2006254610A priority patent/AU2006254610B2/en
Priority to JP2008513899A priority patent/JP5043832B2/ja
Priority to EP06742052.1A priority patent/EP1898473A4/en
Publication of WO2006128375A1 publication Critical patent/WO2006128375A1/zh
Priority to US12/834,082 priority patent/US7985973B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • the present invention relates to a semiconductor light emitting device package structure for packaging at least one semiconductor light emitting chip, and in particular, the package structure of the present invention has a substrate on which a bottom surface is defined, and the bottom surface forms a first a second recessed portion, and a sub-mount is embedded in the second recessed portion. Above the lower base, the at least one semiconductor light-emitting piece is fixed to the lower portion through a Bottom bond pad. The base, the at least one semiconductor light-emitting piece can simultaneously emit light sources of different colors, and is suitable for various display devices and lighting devices. Background technique
  • LEDs semiconductor light-emitting devices
  • the existing high-power semiconductor light-emitting elements have a problem of excessive temperature after a period of continuous illumination.
  • the current semiconductor light-emitting device package structure generally has a problem of excessive thermal resistance, so the heat sink cannot be efficiently used. The temperature of the semiconductor light emitting element is lowered.
  • a semiconductor light emitting device package structure comprising a substrate, a sub-mount, and at least one semiconductor light-emitting chip (Semiconductor light- a top surface and a bottom surface are defined on the substrate, a first recess is formed on the top surface of the substrate, and a second recess is formed on the bottom surface of the substrate The first recess penetrates the second recess and is connected to the second recess.
  • each of the semiconductor light-emitting pieces comprises a bottom portion and an inner electrode, and the at least one semiconductor light-emitting piece is fixed to the first surface of the lower base through a Bottom bond pad thereof A portion exposed to the inside of the first recess.
  • the encapsulation material is used to fill the interior of the protrusion to cover the at least one semiconductor light-emitting piece.
  • the problem of excessive thermal resistance of the prior art package structure can be solved, that is, a large amount of heat generated during the light emitting process of the high power semiconductor light emitting element can be compared.
  • the traditional package structure is more effective in heat dissipation.
  • Figure 1 is a top plan view of a semiconductor light emitting device package structure in accordance with a preferred embodiment of the present invention.
  • Figure 2 is a cross-sectional view showing a semiconductor light emitting element package structure in accordance with a preferred embodiment of the present invention.
  • Figure 3 is a cross-sectional view showing a semiconductor light emitting element package structure in accordance with a second preferred embodiment of the present invention.
  • Figure 4 is a cross-sectional view showing a semiconductor light emitting element package structure in accordance with a third preferred embodiment of the present invention.
  • Package structure 11 Substrate
  • Packaging material 15 Thermally conductive colloid
  • top surface 112 bottom surface
  • first surface 122 second surface
  • a primary object of the present invention is to provide a package structure for packaging at least half of a conductor light-emitting element suitable for use in various types of display devices and illumination devices. Preferred embodiments and embodiments thereof in accordance with the present invention are detailed below.
  • Figure 1 is a top plan view of a semiconductor light emitting element package structure 1 according to a preferred embodiment of the present invention.
  • the package structure 1 has a substrate 11, a lower base 12 and at least one semiconductor light-emitting piece 13, which defines a top surface 111 on which a plurality of external electrodes 17 are disposed.
  • the lower base 12 defines a first surface 121, and the at least one semiconductor light-emitting patch 13 is fixed to the first surface 121 of the lower base 12 through a bond pad of a Bottom 131 thereof.
  • FIG. 2 is a cross-sectional view of a semiconductor light emitting device package structure 1 in accordance with a preferred embodiment of the present invention.
  • the package structure 1 includes a substrate 11, a lower base 12, at least one semiconductor light-emitting chip 13, and a packaging material 14, wherein the same components as those shown in FIG. 1 have been previously described and will not be described again.
  • the top surface 111 of the substrate 11 defines a first recessed portion 1111.
  • the substrate 11 further defines a bottom surface 112.
  • the bottom surface 112 of the substrate 11 defines a second recessed portion 1121.
  • the second recessed portion 1121 The first recessed portion 1111 is connected to the second recessed portion 1121.
  • the lower base 12 further defines a second surface 122.
  • the first surface 121 of the lower base 12 is exposed to the first surface.
  • the inside of the recessed portion 1111, and the top surface 111 forms a convex portion 16 along the edge of the first recessed portion 1111.
  • the at least one semiconductor light-emitting piece 13 has a bottom portion 131 fixed to a portion of the lower surface 12 where the first surface 121 is exposed to the inside of the first recessed portion 1111.
  • the encapsulating material 14 is used to fill the inside of the convex portion 16 to cover the at least one semiconductor light emitting plate 13.
  • the at least one semiconductor light-emitting dice 13 has an internal electrode and is electrically coupled to the external electrode 17 at the top surface 111 through a line.
  • connection manner of the internal electrode and the external electrode 17 of the at least one semiconductor light-emitting chip 13 of the present embodiment is arranged in a series connection manner, but the connection manner of the electrodes may also be connected in parallel mode, and still The object of the invention is achieved.
  • a thermal conductive body 15 is disposed between the first surface 121 of the lower base 12 and the bottom of the first recess 1111 to join the first surface 121 of the lower base 12 and the bottom of the first recess 1111. That is, the substrate 11 and the lower base 12 are connected.
  • FIG. 3 is a semiconductor illuminator in accordance with a second preferred embodiment of the present invention
  • the second surface 122 of the lower base 12 and the bottom surface 112 of the substrate 11 form a parallel surface, and further a thermal adhesive 15 is applied under the second surface 122 of the lower base 12, so that The second surface 122 of the lower base 12 and the bottom surface 112 of the substrate 11 form a plane.
  • Figure 4 is a cross-sectional view showing a semiconductor light emitting element package structure 1 in accordance with a third preferred embodiment of the present invention.
  • the same components as those shown in Fig. 2 have been described in detail above and will not be described again.
  • the second surface 122 of the lower base 12 and the bottom surface 112 of the substrate 11 form a parallel surface, and further a thermal adhesive 15 is applied under the bottom surface 112 of the substrate 11 so that the lower base
  • the second surface 122 of the 12 forms a plane with the bottom surface 112 of the substrate 11.
  • the invention provides a package structure with high heat dissipation efficiency, which is used for packaging at least one semiconductor light emitting element, and can further effectively eliminate a large amount of heat generated by the high power semiconductor light emitting element by using a heat conducting device, so as to solve the traditional package structure and The thermal resistance of the interface between the heat dissipating modules is too high.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

半导体发光元件封装结构 技术领域
本发明涉及一半导体发光元件封装结构 (Package structure), 用以封装至 少一半导体发光小片， 而且特別地， 本发明的封装结构具有一基板， 该基板 上定义一底表面，该底表面形成一第二凹陷部， 且一下底座 (Sub-mount)嵌入 于该第二凹陷部， 于该下底座的上方， 该至少一半导体发光小片通过其底部 (Bottom)的内部电极 (bond pad)固定于该下底座，该至少一半导体发光小片可 以同时持续发出各种不同颜色的光源， 适用于各式显示设备和照明设备。 背景技术
由于半导体发光元件 (Light-emitting device, LED)具有省电、 使用寿命 长、反应快以及适合量产等许多优点， 因此目前以半导体发光元件为光源的 照明产品日益广泛。 然而， 现有的高功率的半导体发光元件在持续发亮一段 时间后， 会有温度过高的问题， 目前的半导体发光元件封装结构普遍具有热 阻过高的问题， 因此散热装置无法有效率地降低半导体发光元件的温度。 因 此， 提供一种能够良好散热的封装结构确有其必要性， 以解决封装结构与散 热模块两者间界面所具有的热阻过高的问题，有鉴于此，本发明人发挥创意， 经不断地精进研发， 遂有本发明的产生。 发明内容
本发明的一个目的在于提供一种半导体发光元件封装结构，该封装结构 用以封装至少一半导体发光元件， 并提供优选的散热效率， 以改善该半导体 发光元件封装结构热阻过高的问题。
根据本发明的一个优选具体实施例的半导体发光元件封装结构 (Package structure) , 该半导体发光元件封装结构包括一基板 (substrate)、 一下底座 (Sub-mount)、至少一半导体发光小片 (Semiconductor light-emitting die)及一封 装材料 (Package material) 该基板上定义一顶表面和一底表面， 该基板的该 顶表面上形成一第一凹陷部， 该基板的该底表面上形成一第二凹陷部， 该第 一凹陷部穿透该第二凹陷部， 并与该第二凹陷部相连接。 在该顶表面上沿着 该第一凹陷部的边缘形成一凸部， 该顶表面之上亦设有多个外部电极 (Outer electrode) 该下底座与该第二凹陷部相接合， 该下底座上定义一第一表面和 一第二表面， 该下底座嵌入于该第二凹陷部， 以至于该下底座的该第一表面 的一部分暴露于该第一凹陷部的内部。 该至少一半导体发光小片， 其中每一 半导体发光小片包括一底部和一内部电极， 该至少一半导体发光小片通过其 底部 (Bottom)的内部电极 (bond pad)固定于该下底座的该第一表面暴露于该 第一凹陷部内部的部分。 该封装材料用于填充该凸部内部， 以覆盖该至少一 半导体发光小片。
根据本发明的一优选具体实施例的半导体发光元件封装结构， 先前技术 的封装结构热阻过高的问题可获得解决， 即于高功率半导体发光元件发光过 程中所产生的大量热量， 亦可较传统封装结构更能有效地散热。
关于本发明的优点与精神可以通过以下的发明详述及所附图式得到进 一步的了解。 附图说明
图 1为根据本发明的一优选具体实施例的半导体发光元件封装结构的顶 视图。
图 2为根据本发明的一优选具体实施例的半导体发光元件封装结构的剖 面视图。
图 3为根据本发明的第二优选具体实施例的半导体发光元件封装结构的 剖面视图。
图 4为根据本发明的第三优选具体实施例的半导体发光元件封装结构的 剖面视图。
简单符号说明
1 : 封装结构 11 : 基板
12 下底座 13 : 半导体发光小片
14 封装材料 15: 导热胶体
16 凸部 17: 外部电极
111 顶表面 112: 底表面
1111 : 第一凹陷 1121 : 第二凹陷部
121 : 第一表面 122: 第二表面
131 : 小片底部 具体实施方式
本发明的主要目的在于提供一封装结构， 该封装结构用以封装至少一半 导体发光元件， 适用于各式益示设备和照明设备。 下文将详述根据本发明的 优选具体实施例及其实施方式。
请参阅图 1。 图 1为#>据本发明的一优选具体实施例的半导体发光元件 封装结构 1的顶视图。 该封装结构 1具有一基板 11、 一下底座 12和至少一 半导体发光小片 13 , 该基板 11定义一顶表面 111 , 该顶表面 111之上设有 多个外部电极 17。 该下底座 12定义一第一表面 121 , 该至少一半导体发光 小片. 13通过其底部 (Bottom)131的内部电极 (bond pad)固定于该下底座 12的 该第一表面 121。
请参阅图 2。 图 2为根据本发明的一优选具体实施例的半导体发光元件 封装结构 1的剖面视图。 该封装结构 1 包括一基板 11、 一下底座 12、 至少 一半导体发光小片 13 , 以及一封装材料 14, 其中与图 1所示的相同元件之 处，前已评叙，不再赘述。该基板 11的该顶表面 111形成一第一凹陷部 1111 , 该基板 11 上还定义一底表面 112， 该基板 11的该底表面 112形成一第二凹 陷部 1121 , 该第二凹陷部 1121与第一凹陷部 1111相连接， 而该下底座 12 嵌入于该第二凹陷部 1121中， 该下底座 12还定义一第二表面 122, 该下底 座 12的该第一表面 121暴露于该第一凹陷部 1111的内部， 且该顶表面 111 沿着第一凹陷部 1111的边缘形成一凸部 16。该至少一半导体发光小片 13具 有一底部 131 ,该底部 131固定于该下底座 12的该第一表面 121暴露于该第 一凹陷部 1111内部的部分。 该封装材料 14, 用于填充该凸部 16的内部， 用 以覆盖该至少一半导体发光小片 13。 该至少一半导体发光小片 13具有内部 电极， 并透过线路与位于该顶表面 111 的外部电极 17 导通 (Electrically coupled)。本实施例的该至少一半导体发光小片 13具有的内部电极与外部电 极 17的连接方式配设成串联的型态， 但该等电极的连接方式， 亦可采用并 联的型态配接， 仍可达到本发明的目的。
一导热胶体 15置于该下底座 12的该第一表面 121与该第一凹陷部 1111 的该底部之间， 以结合该下底座 12的该第一表面 121与该第一凹陷 1111的 该底部， 亦即用以连结该基板 11与该下底座 12。
请参阅图 3。 图 3为根据本发明的第二优选具体实施例的半导体发光元 件封装结构 1的剖面视图。 其中与图 2所示的相同元件之处， 前已详叙， 不 再资述。 该下底座 12的该第二表面 122与该基板 11的该底表面 112构成一 平行面， 并进一步于该下底座 12的该第二表面 122的下方涂上一层导热胶 体 15 ,以至于该下底座 12的该第二表面 122与该基板 11的该底表面 112构 成一平面。
请参阅图 4。 图 4为根据本发明的第三优选具体实施例的半导体发光元 件封装结构 1的剖面视图。 其中与图 2所示的相同元件之处， 前已详叙， 不 再赘述。 该下底座 12的该第二表面 122与该基板 11的该底表面 112构成一 平行面，并进一步于该基板 11的该底表面 112的下方涂上一层导热胶体 15, 以至于该下底座 12的该第二表面 122与该基板 11的该底表面 112构成一平 面。
本发明提供了一具高散热效率的封装结构，该封装结构用以封装至少一 半导体发光元件， 亦可配合导热装置进一步有效排除高功率半导体发光元件 所产生的大量热量， 以解决传统封装结构与散热模块两者间界面所具有的热 阻过高的问题。
通过以上优选具体实施例的详述，希望能更加清楚描述本发明的特征与 4青神 , 而并非以上述所揭露的优选具体实施例来对本发明的范畴加以限制。 相反地，其目的是希望能涵盖各种改变及具相等性的安排于本发明所欲申请 的权利要求的范畴内。

Claims

权利要求书
1. 一种半导体发光元件封装结构， 包括：
一基板， 该基板上定义一顶表面和一底表面， 该基板的该顶表面上形成 一笫一凹陷部， 该基板的该底表面上形成一第二凹陷部， 且该第二凹陷部与 该第一凹陷部相连接， 在该顶表面上沿着该第一凹陷部的边缘形成一凸部， 该頂表面之上设有多个外部电极；
一下底座与该第二凹陷部相接合，该下底座上定义一第一表面和一第二 表面， 该下底座嵌入于该第二凹陷部， 以至于该下底座的该第一表面的一部 分暴露于该第一凹陷部的内部。
至少一半导体发光小片，其中每一半导体发光小片包括一底部和一内部 电极，该至少一半导体发光小片通过该底部固定于该下底座的该第一表面暴 露于该第一凹陷部内部的部分； 以及
一封装材料， 该封装材料用于填充该凸部内部， 以覆盖该至少一半导体 发光小片。
2. 如权利要求 1所述的半导体发光元件封装结构， 其中该第一凹陷部的 大小小于该第二凹陷部的大小， 以至于该第一凹陷部具有一底部。
3. 如权利要求 2所述的半导体发光元件封装结构， 其中一导热胶体置于 该下底座的该第一表面与该第一凹陷部的该底部之间，以结合该下底座的该 第一表面与该第一凹陷部的该底部。
4. 如权利要求 1所述的半导体发光元件封装结构， 其中该基板由金属、 陶瓷、 软性印刷电路板及硬性印刷电路板其中一种所构成。
5. 如权利要求 1所述的半导体发光元件封装结构， 其中该下底座由半导 体所组成。
6. 如权利要求 1所述的半导体发光元件封装结构， 其中该下底座的该第 二表面与该基板的该底表面构成一平行面。
7. 如权利要求 6所述的半导体发光元件封装结构， 其中该下底座的该第 二表面与该基板的该底表面构成一平面。
8. 如权利要求 1所述的半导体发光元件封装结构， 其中该至少一半导体 发光小片为一白光二极管。
9. 如权利要求 6所述的半导体发光元件封装结构， 其中该至少一半导体 发光小片包括一蓝光二极管。
10. 如权利要求 1所述的半导体发光元件封装结构， 其中该至少一半导 体发光小片包括至少一红光二极管、至少一蓝光二极管以及至少一绿光二极 管。
PCT/CN2006/001165 2005-05-31 2006-05-31 Structure de conditionnement d'un composant electroluminescent a semiconducteur WO2006128375A1 (fr)

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US11/921,176 US7777237B2 (en) 2005-05-31 2006-05-31 Semiconductor light-emitting device and method of fabricating the same
AU2006254610A AU2006254610B2 (en) 2005-05-31 2006-05-31 Package structure of semiconductor light-emitting device
JP2008513899A JP5043832B2 (ja) 2005-05-31 2006-05-31 半導体発光装置およびその製造方法
EP06742052.1A EP1898473A4 (en) 2005-05-31 2006-05-31 CAPACITY STRUCTURE OF SEMICONDUCTOR ILLUMINATION ELEMENT
US12/834,082 US7985973B2 (en) 2005-05-31 2010-07-12 Semiconductor light-emitting device and method of fabricating the same

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CNB2005100747311A CN100435361C (zh) 2005-05-31 2005-05-31 半导体发光元件封装结构
CN200510074731.1 2010-05-31

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CN (1) CN100435361C (zh)
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US20090101932A1 (en) 2009-04-23
KR20080030584A (ko) 2008-04-04
US7985973B2 (en) 2011-07-26
AU2006254610A1 (en) 2006-12-07
CN100435361C (zh) 2008-11-19
EP1898473A1 (en) 2008-03-12
JP5043832B2 (ja) 2012-10-10
EP1898473A4 (en) 2013-11-20
JP2008543064A (ja) 2008-11-27
US7777237B2 (en) 2010-08-17
AU2006254610B2 (en) 2011-09-08
US20100270565A1 (en) 2010-10-28
CN1874014A (zh) 2006-12-06

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