WO2006127943A2 - Circuits durcis contre l'effet d'une particule isolee - Google Patents
Circuits durcis contre l'effet d'une particule isolee Download PDFInfo
- Publication number
- WO2006127943A2 WO2006127943A2 PCT/US2006/020318 US2006020318W WO2006127943A2 WO 2006127943 A2 WO2006127943 A2 WO 2006127943A2 US 2006020318 W US2006020318 W US 2006020318W WO 2006127943 A2 WO2006127943 A2 WO 2006127943A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- output
- signal
- logic circuit
- event
- state
- Prior art date
Links
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- -1 bipolarCMOS (BiCMOS) Chemical compound 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/037—Bistable circuits
- H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
Definitions
- Integrated circuits used in devices that operate in outer space, earth orbital space, and high atmospheric altitudes generally have to be highly reliable and operate using very low levels of power.
- these necessities, space, weight and cost limitations generally cause these integrated circuits to be very densely populated and highly complex.
- Figure 4 is a second block diagram illustrating a glitch filter for hardening a logic circuit against short duration single-event effect conditions
- FIG. 4 is a block diagram illustrating a circuit 200 that employs a glitch filter.
- the glitch filter conveniently provides hardening against short term SEE conditions, i.e., against SET and/or SEU conditions.
- transfer logic circuitry 208 of the first stage 104 is coupled in series with a feedback-controlled glitch filter 202.
- the feedback control may be provided by a feedback module 212.
- feedforward signal The effect of glitch-induced signal on a state of an output signal of the feedforward tri- state inverter 306 (“feedforward signal”) may then passed to the feedforward inverter 308.
- the feedforward inverter 308 inverts the feedforward signal and passes it to node 328. Without the glitch filter 102, the inverted version of the feedforward signal containing the glitch is passed immediately on to the second stage 106, resulting in a potential SEU condition.
- the CLK transitions to a LOW state causing the feedforward signal at node 320 to be initially latched in the undesired HIGH state, as shown in Curve 356. But because of the glitch filter 102, the slowed-output signal on node 328 does not quickly transition to a LOW state, but rather, continues to satisfy the HIGH-state threshold 360 and keep the node 328 at the proper HIGH state.
Landscapes
- Manipulation Of Pulses (AREA)
Abstract
L'invention concerne un appareil et un procédé de durcissement d'un circuit contre une condition d'effet d'une particule isolée. Un premier circuit logique émet un événement de signal de sortie présentant une pointe de tension imprimée dessus. Un filtre à pointes de tension (i) reçoit l'événement de signal de sortie, (ii) ralentit un taux de changement de l'événement de signal de sortie selon une quantité de temps donnée afin de produire un événement de signal de sortie ralenti, et (iii) fournit à un second circuit logique l'événement de signal de sortie ralenti. Lorsqu'une durée de l'événement de signal de sortie est inférieure à la quantité de temps donnée, le filtre à pointes de tension empêche l'événement de signal de sortie ralenti d'atteindre un seuil d'état non souhaité, qui à son tour empêche le second circuit logique de fonctionner dans un état non souhaité. Un module de rétroaction éventuel fournit un événement de signal de rétroaction sans pointe de tension au filtre à pointes de tension. Lorsque l'événement de signal de sortie ralenti ne satisfait pas le seuil d'état non souhaité, l'événement de signal de rétroaction neutralise la pointe de tension imprimée sur l'événement de signal de sortie.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06771225A EP1884017A2 (fr) | 2005-05-25 | 2006-05-24 | Circuits durcis contre l'effet d'une particule isolee |
JP2008513725A JP2008543179A (ja) | 2005-05-25 | 2006-05-24 | シングルイベント効果対策強化回路 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/136,920 | 2005-05-25 | ||
US11/136,920 US20060267653A1 (en) | 2005-05-25 | 2005-05-25 | Single-event-effect hardened circuitry |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006127943A2 true WO2006127943A2 (fr) | 2006-11-30 |
WO2006127943A3 WO2006127943A3 (fr) | 2007-02-08 |
Family
ID=37075924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/020318 WO2006127943A2 (fr) | 2005-05-25 | 2006-05-24 | Circuits durcis contre l'effet d'une particule isolee |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060267653A1 (fr) |
EP (1) | EP1884017A2 (fr) |
JP (1) | JP2008543179A (fr) |
WO (1) | WO2006127943A2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3811403A4 (fr) * | 2018-05-31 | 2022-03-16 | BAE SYSTEMS Information and Electronic Systems Integration, Inc. | Circuit de verrouillage protégé contre les rayonnements |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10343565B3 (de) * | 2003-09-19 | 2005-03-10 | Infineon Technologies Ag | Master-Latchschaltung mit Signalpegelverschiebung für ein dynamisches Flip-Flop |
FR2883998A1 (fr) * | 2005-04-05 | 2006-10-06 | St Microelectronics Sa | Coprocesseur securise comprenant un circuit de detection d'un evenement |
FR2884000A1 (fr) * | 2005-04-05 | 2006-10-06 | St Microelectronics Sa | Coprocesseur securise comprenant des moyens pour empecher l'acces a un organe du coprocesseur |
TW200828001A (en) * | 2006-12-25 | 2008-07-01 | Realtek Semiconductor Corp | Reset circuit and the associated method |
US7619455B2 (en) * | 2007-04-19 | 2009-11-17 | Honeywell International Inc. | Digital single event transient hardened register using adaptive hold |
US7411411B1 (en) | 2007-10-19 | 2008-08-12 | Honeywell International Inc. | Methods and systems for hardening a clocked latch against single event effects |
US20140157223A1 (en) * | 2008-01-17 | 2014-06-05 | Klas Olof Lilja | Circuit and layout design methods and logic cells for soft error hard integrated circuits |
US7772874B2 (en) * | 2008-01-28 | 2010-08-10 | Actel Corporation | Single event transient mitigation and measurement in integrated circuits |
US8191021B2 (en) * | 2008-01-28 | 2012-05-29 | Actel Corporation | Single event transient mitigation and measurement in integrated circuits |
US8255772B1 (en) | 2008-06-18 | 2012-08-28 | Cisco Technology, Inc. | Adaptive memory scrub rate |
US8254186B2 (en) | 2010-04-30 | 2012-08-28 | Freescale Semiconductor, Inc. | Circuit for verifying the write enable of a one time programmable memory |
CN102082568B (zh) * | 2010-11-17 | 2012-08-22 | 北京时代民芯科技有限公司 | 一种抗单粒子瞬态电路 |
US8378711B2 (en) * | 2011-03-01 | 2013-02-19 | Stmicroelectronics S.R.L. | Detection of single bit upset at dynamic logic due to soft error in real time |
US9013219B2 (en) | 2013-09-11 | 2015-04-21 | The Boeing Company | Filtered radiation hardened flip flop with reduced power consumption |
CN104360781B (zh) * | 2014-11-12 | 2017-10-03 | 京东方科技集团股份有限公司 | 触控电极的驱动单元、驱动电路、触控面板及驱动方法 |
US9997210B2 (en) | 2015-03-27 | 2018-06-12 | Honeywell International Inc. | Data register for radiation hard applications |
CN105574270B (zh) * | 2015-12-16 | 2018-09-11 | 北京时代民芯科技有限公司 | 一种抗单粒子加固电路单元布局布线方法 |
KR101939387B1 (ko) * | 2017-04-12 | 2019-04-11 | 한국과학기술원 | 암세포의 어트랙터 변화기작에 기반하여 실시간 회로전환 가능한 자가복구 디지털장치 |
EP3732788A4 (fr) * | 2017-12-29 | 2021-08-25 | BAE Systems | Circuit de bascule bistable d durci par rayonnement |
CN110752841A (zh) * | 2019-11-18 | 2020-02-04 | 南京航空航天大学 | 一种高可靠性可自恢复的锁存器结构 |
CN112737560B (zh) * | 2020-12-24 | 2022-09-13 | 中国人民解放军国防科技大学 | 一种无频率损耗的集成电路抗单粒子瞬态加固方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0135893A1 (fr) * | 1983-09-26 | 1985-04-03 | Siemens Aktiengesellschaft | Convertisseur de signal d'un processus de commande d'une machine outil |
US20010048341A1 (en) * | 2000-05-29 | 2001-12-06 | Stmicroelectronics Ltd. | Programmable glitch filter |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3359354B2 (ja) * | 1991-06-24 | 2002-12-24 | テキサス インスツルメンツ インコーポレイテツド | 向上されたダイナミック負フィードバッグを備えた電子ラッチ |
US5907254A (en) * | 1996-02-05 | 1999-05-25 | Chang; Theodore H. | Reshaping periodic waveforms to a selected duty cycle |
US6127864A (en) * | 1998-08-19 | 2000-10-03 | Mission Research Corporation | Temporally redundant latch for preventing single event disruptions in sequential integrated circuits |
US6356101B1 (en) * | 1999-12-28 | 2002-03-12 | Honeywell International Inc. | Glitch removal circuitry |
US6455392B2 (en) * | 2000-01-21 | 2002-09-24 | Bae Systems Information And Electrical Systems Integration, Inc. | Integrated resistor having aligned body and contact and method for forming the same |
JP4141767B2 (ja) * | 2002-08-27 | 2008-08-27 | 富士通株式会社 | 強誘電体キャパシタを使用した不揮発性データ記憶回路 |
JP2004253730A (ja) * | 2003-02-21 | 2004-09-09 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
US6876572B2 (en) * | 2003-05-21 | 2005-04-05 | Altera Corporation | Programmable logic devices with stabilized configuration cells for reduced soft error rates |
US7135730B2 (en) * | 2004-01-20 | 2006-11-14 | Broadcom Corporation | Bias-independent capacitor based on superposition of nonlinear capacitors for analog/RF circuit applications |
DE102004006254A1 (de) * | 2004-02-09 | 2005-09-01 | Infineon Technologies Ag | Schaltungsanordnung zur Erzeugung eines Rücksetzsignals nach einem Absinken und Wiederansteigen einer Versorgungsspannung |
US7792196B2 (en) * | 2004-12-28 | 2010-09-07 | Intel Corporation | Single conductor bidirectional communication link |
US7236919B2 (en) * | 2005-07-08 | 2007-06-26 | Honeywell International Inc. | Method for using layout regions to predict single-event effects |
-
2005
- 2005-05-25 US US11/136,920 patent/US20060267653A1/en not_active Abandoned
-
2006
- 2006-05-24 EP EP06771225A patent/EP1884017A2/fr not_active Withdrawn
- 2006-05-24 WO PCT/US2006/020318 patent/WO2006127943A2/fr active Application Filing
- 2006-05-24 JP JP2008513725A patent/JP2008543179A/ja not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0135893A1 (fr) * | 1983-09-26 | 1985-04-03 | Siemens Aktiengesellschaft | Convertisseur de signal d'un processus de commande d'une machine outil |
US20010048341A1 (en) * | 2000-05-29 | 2001-12-06 | Stmicroelectronics Ltd. | Programmable glitch filter |
Non-Patent Citations (1)
Title |
---|
WANG W: "RC hardened FPGA configuration SRAM cell design" ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 40, no. 9, 29 April 2004 (2004-04-29), pages 525-526, XP006021812 ISSN: 0013-5194 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3811403A4 (fr) * | 2018-05-31 | 2022-03-16 | BAE SYSTEMS Information and Electronic Systems Integration, Inc. | Circuit de verrouillage protégé contre les rayonnements |
Also Published As
Publication number | Publication date |
---|---|
EP1884017A2 (fr) | 2008-02-06 |
WO2006127943A3 (fr) | 2007-02-08 |
US20060267653A1 (en) | 2006-11-30 |
JP2008543179A (ja) | 2008-11-27 |
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