WO2006118454A1 - Procede et dispositif de separation de produits a l'aide d'un bord tranche commande et produit separe - Google Patents

Procede et dispositif de separation de produits a l'aide d'un bord tranche commande et produit separe Download PDF

Info

Publication number
WO2006118454A1
WO2006118454A1 PCT/NL2006/050061 NL2006050061W WO2006118454A1 WO 2006118454 A1 WO2006118454 A1 WO 2006118454A1 NL 2006050061 W NL2006050061 W NL 2006050061W WO 2006118454 A1 WO2006118454 A1 WO 2006118454A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser beam
product
laser
cut
cut edge
Prior art date
Application number
PCT/NL2006/050061
Other languages
English (en)
Inventor
Henri Joseph Van Egmond
Johannes Leonardus Jurrian Zijl
Original Assignee
Fico B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fico B.V. filed Critical Fico B.V.
Priority to EP06716694A priority Critical patent/EP1905067A1/fr
Priority to JP2008502936A priority patent/JP2008537511A/ja
Priority to CN2006800092257A priority patent/CN101147241B/zh
Publication of WO2006118454A1 publication Critical patent/WO2006118454A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/08—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for flash removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Definitions

  • the invention relates to a method for separating products, in particular semiconductor circuits, from a shared carrier by means of laser cutting, wherein a cut is made by means of a first laser beam.
  • the invention also relates to a device for separating products, in particular semiconductor circuits, from a shared carrier by means of laser cutting, comprising: a laser source and a product carrier displaceable relative to the laser source, wherein the laser source is adapted to generate a first laser beam for making a cut between the products.
  • the invention further also relates to a product, in particular a semiconductor mounted on a carrier, separated by means of a laser beam using such a method.
  • the laser cutting of products is a technique with which smaller products, such as for instance electronic components, can be separated.
  • An advantage of laser cutting over more traditional techniques for separating products, such as for instance sawing with a rotating saw blade, is that laser cutting requires no, or only very few, product-dependent machine parts and that the freedom in Tespect of the design of the products for separating is very great.
  • By modifying the control of a device for laser cutting, which can be a software operation it is already possible to change over the device in respect of the products for processing.
  • a drawback of laser cutting is however that the edge created by laser cutting (the cut edge) has a determined surface roughness which is not acceptable under all circumstances. Furthermore, the cut usually tapers to a greater or lesser extent so that the cut edge is not normally perpendicular to a top and bottom surface of the product; this is not desirable either.
  • the present invention has for its object to increase the options for separating products, in particular semiconductor circuits, from a shared carrier by means of laser cutting, wherein the surface roughness of the cut edges resulting from the laser cutting is controllable.
  • the invention provides for this purpose a method of the type stated in the preamble, wherein the surface roughness of a cut edge is reduced by means of a second laser beam.
  • the second laser beam is moved substantially parallel to a cut edge for smoothing.
  • the irregularities resulting from the laser cutting process with the first laser beam can thus be at least partly removed using the second laser beam.
  • the irregularities resulting from the laser cutting with the first laser beam are (partly) a consequence of the usually pulsating pattern of the first laser beam, as a result of which. the laser cutting is accompanied by successive shock waves. Deeper openings
  • the second laser beam can be optimized to remove only a limited amount of material, in particular those portions which are less deeply cut-away by the first laser beam. After removing these higher portions (or protruding portions) from the surface of the cut edge with the second laser beam there thus remains a smoother cut edge (with a roughness in the order of magnitude of 2 - 4 Ra, typically about 3.0 Ra).
  • the use of the second laser beam to smooth the cut edge is less obvious since it is precisely due to the application of a laser beam that the rough cut edge is created. It has nevertheless been found possible in practice to realize a much smoother cut edge in this unexpectedly simple manner, the product being after all already situated in the laser device.
  • Another important advantage is that the angle which the cut edge encloses with the top and/or bottom side of the product can also be influenced. This angle can now be made perpendicular, even if the cut edge resulting after processing with only the first laser beam enclosed a different angle with the top and/or bottom side. It is noted that the cut can be made by the first laser beam by means of multiple process runs, i.e. the first laser beam is moved several times through a groove becoming increasingly deeper until the actual desired cut is realized.
  • the distance from the centre line of the first laser beam to the cut edge is preferably greater than the distance from the second laser beam to the cut edge.
  • the second laser beam is thus moved slightly closer to the cut edge as seen from the position of the first laser beam. A sufficient contact of the second laser beam with at least the higher portions of the cut edge is thus obtained.
  • the second laser beam Since the second laser beam has to remove less material, it is possible for the first laser beam to pulsate at a lower frequency than the second laser beam. The reason for this is that a considerable amount of energy is required for the cutting, and that more energy can be transferred with longer pulses. It is moreover desirable during the smoothing (polishing) to have the pulses follow each other as closely as possible, and in this way approximate a straight line as well as possible. As alternative it is also possible to envisage the second laser beam having a substantially constant signal strength; a straight line is thus actually obtained. For the same reason it is also possible for the relative speed of displacement of the first laser beam relative to the products to be greater than the relative speed of displacement of the second laser beam relative to the products.
  • the second laser beam takes a multiple form.
  • the multiple second laser beams must herein have a mutual distance (this distance optionally being controllable) such that the second laser beams just make contact with the cut edges in the desired manner.
  • the first and second laser beams being joined together into a combined laser beam in a manner such that the second laser beam is placed behind the first laser beam in the direction of displacement of the combined laser beam. This means that the second laser beam "lags" behind the first laser beam. The process run of the first and second laser beams can thus even be combined.
  • the first laser beam For separating products it is usual for the first laser beam to be positioned substantially perpendicularly of a contact surface for processing of the products for separating. Power can thus be transferred in optimal manner.
  • the necessity for transferring power optimally is less pressing. There is therefore a less strict requirement in respect of positioning of the second laser beam; it is generally sufficient in practice if the second laser beam is substantially parallel to the cut edge for smoothing.
  • the invention also provides a device for separating products, in particular semiconductor circuits, from a shared carrier by means of laser cutting, comprising: a laser source and a product carrier displaceable relative to the laser source, wherein the laser source is adapted to generate a first laser beam for making a cut between the products and a second laser beam for reducing the surface roughness of a cut edge.
  • a possible option here is to give the laser source a single form for the purpose of successively generating the first and second laser beam.
  • the laser source takes a multiple form for the purpose of generating the first and second laser beam successively or simultaneously as desired.
  • a product carrier displaceable relative to the laser source is understood to mean a stationary laser source in combination with a displaceable product carrier, a combination of a stationary product carrier and a displaceable laser source (this can also be a laser source with a displaceable mirror), or it can be a combination of a displaceable laser source and a displaceable product carrier.
  • the present invention also provides a product, in particular a semiconductor mounted on a carrier, separated by means of a laser beam using the method as described above.
  • a product in particular a semiconductor mounted on a carrier, separated by means of a laser beam using the method as described above.
  • an optimal surface roughness of the cut edges can be chosen and the angle which the cut edges enclose with the top and/or bottom side of the product can be precisely controlled. It thus becomes possible for instance to embody the cut edge such that it encloses a right angle with the top and/or bottom side of the separated product.
  • a cut edge at least partly bounding the product has over only a part of the length a surface roughness reduced by means of a second laser beam.
  • a specific embodiment variant hereof forms a product which is provided with two opposing cut edges of different surface roughness.
  • a memory card such as a Transflash (a product of standardized dimensions developed especially for mobile telecommunication)
  • placing of the product in a holder can be facilitated and clamping of the product can also be readily controlled.
  • figure IA shows a perspective view of an assembled product to be divided into individual segments
  • figure IB shows a perspective view of the assembled product of figure IA in a situation where it has been divided into two segments by a first laser beam
  • figure 1C shows a perspective view of the assembled product of figures IA and IB in a situation where the cut edges have been smoothed by a second laser beam
  • figure 2A shows a schematic representation of a cross-section through a cut edge and a first laser beam
  • figure 2B shows a schematic representation of a cross-section through a cut edge and a second laser beam
  • figure 3 is a top view of a product separated by means of laser cutting
  • figure 4 is a schematic perspective representation of a laser cutting device according to the present invention.
  • Figure IA shows an assembled product 1 consisting of a carrier 2 on which are placed electronic components (not shown) which are encapsulated by a moulding 3.
  • Figure IB shows that a cut 4 has been arranged by a first laser beam (not shown), whereby two product parts 5, 6 result.
  • the cut 4 is bounded by cut edges 7, 8 having a relatively rough surface.
  • smoothed cut edges 9, 10 result (see figure 1C) having a lesser surface roughness than the surface roughness of the original cut edges 7, 8 made using the first laser beam.
  • Figure 2A shows a cut edge 20 of an only partly shown product 21 with a surface which is provided with irregularities 22.
  • a first laser beam 23 is situated at a distance ⁇ i from cut edge 20.
  • a second laser beam 24 is placed a shorter distance d ⁇ from product 21 during a subsequent process, as a result of which a smoothed cut edge 25 results.
  • FIG. 3 shows a top view of a product in the form of a memory card 30 (referred to more specifically as a Transflash) separated by means of laser cutting.
  • the periphery of memory card 30 is so complex that it is not suitable for separating with a traditional sawing process. Shown in exaggerated manner is that three sides 31, 32, 33 of the memory card are bounded by relatively rough cut edges, while a fourth side 34 is bounded by a smoother cut edge. This fourth side 34 has therefore been processed with the second laser beam.
  • Figure 4 shows a laser cutting device 40 with a C-frame 41.
  • Frame 41 supports a product carrier 42 which is displaceable in an X and Y direction.
  • a product 43 yet to be processed is placed on product carrier 42.
  • Two laser sources 44 and 45, with which a first and a second laser beam can be respectively generated, are placed above product carrier 42.

Abstract

L'invention concerne un procédé permettant de séparer des produits, en particulier des circuits de semi-conducteurs, d'un support commun par découpage au laser. L'invention concerne également un dispositif permettant de mettre en oeuvre ledit procédé. L'invention concerne également un produit, en particulier un semi-conducteur monté sur un support, séparé par faisceau laser au moyen dudit procédé.
PCT/NL2006/050061 2005-03-22 2006-03-21 Procede et dispositif de separation de produits a l'aide d'un bord tranche commande et produit separe WO2006118454A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06716694A EP1905067A1 (fr) 2005-03-22 2006-03-21 Procede et dispositif de separation de produits a l'aide d'un bord tranche commande et produit separe
JP2008502936A JP2008537511A (ja) 2005-03-22 2006-03-21 制御された切断端面（ｃｕｔｅｄｇｅ）で製品（ｐｒｏｄｕｃｔ）を分離する方法および装置、並びにこれにより分離された製品
CN2006800092257A CN101147241B (zh) 2005-03-22 2006-03-21 用于分离具有可控切割边产品的方法和设备及分离的产品

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1028588 2005-03-22
NL1028588A NL1028588C2 (nl) 2005-03-22 2005-03-22 Werkwijze en inrichting voor het separeren van producten met een gecontroleerde snederand en gesepareerd product.

Publications (1)

Publication Number Publication Date
WO2006118454A1 true WO2006118454A1 (fr) 2006-11-09

Family

ID=35453332

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2006/050061 WO2006118454A1 (fr) 2005-03-22 2006-03-21 Procede et dispositif de separation de produits a l'aide d'un bord tranche commande et produit separe

Country Status (7)

Country Link
EP (1) EP1905067A1 (fr)
JP (1) JP2008537511A (fr)
KR (1) KR20070121793A (fr)
CN (1) CN101147241B (fr)
NL (1) NL1028588C2 (fr)
TW (1) TWI465310B (fr)
WO (1) WO2006118454A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9087850B2 (en) 2009-07-06 2015-07-21 Renesas Electronics Corporation Method for manufacturing semiconductor device
WO2020117130A1 (fr) * 2018-12-07 2020-06-11 Intech-Les, Razvojni Center, D.O.O. Amélioration de la rugosité de surface au moyen d'un laser
EP3685954A1 (fr) * 2019-01-22 2020-07-29 Synova S.A. Procédé et appareil de découpe de pièce à l'aide d'un faisceau laser complex guidé par jet de fluide
WO2021018431A1 (fr) * 2019-07-29 2021-02-04 Wsoptics Technologies Gmbh Procédé d'usinage par faisceau d'une pièce de fabrication tabulaire ou tubulaire
CN113199149A (zh) * 2020-01-15 2021-08-03 大族激光科技产业集团股份有限公司 激光去除镀层的加工工艺

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016033477A1 (fr) * 2014-08-28 2016-03-03 Ipg Photonics Corporation Système et procédé à lasers multiples pour traitement de coupe et de post-coupe de matériaux diélectriques durs
CN106346143B (zh) * 2016-11-24 2018-05-25 武汉华星光电技术有限公司 一种激光切割机及其切割方法
CN113646124B (zh) * 2019-02-25 2022-09-27 Ws光学技术有限责任公司 用于射束加工板状或管状工件的方法
CN112404745A (zh) * 2020-11-02 2021-02-26 中国航空工业集团公司北京长城航空测控技术研究所 一种薄片晶体器件切割面的超快激光平整方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626143A (en) * 1969-04-02 1971-12-07 American Can Co Scoring of materials with laser energy
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US20020086544A1 (en) * 2000-12-15 2002-07-04 Adrian Boyle Laser machining of semiconductor materials
US6420678B1 (en) * 1998-12-01 2002-07-16 Brian L. Hoekstra Method for separating non-metallic substrates
US20020125232A1 (en) * 1998-08-26 2002-09-12 Choo Dae-Ho Laser cutting apparatus and method
US20030047545A1 (en) * 2000-04-11 2003-03-13 Mckee Terry Method for laser drilling

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5368900A (en) * 1991-11-04 1994-11-29 Motorola, Inc. Multistep laser ablation method for making optical waveguide reflector
JPH11503880A (ja) * 1996-02-09 1999-03-30 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体材料のウエファに形成された半導体素子のレーザ分割方法
WO2001010177A1 (fr) * 1999-08-03 2001-02-08 Xsil Technology Limited Systeme et procede de separation de circuits
KR100634750B1 (ko) * 1999-12-07 2006-10-16 삼성전자주식회사 레이저 커팅 장치
US6677552B1 (en) * 2001-11-30 2004-01-13 Positive Light, Inc. System and method for laser micro-machining

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626143A (en) * 1969-04-02 1971-12-07 American Can Co Scoring of materials with laser energy
US20020125232A1 (en) * 1998-08-26 2002-09-12 Choo Dae-Ho Laser cutting apparatus and method
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6420678B1 (en) * 1998-12-01 2002-07-16 Brian L. Hoekstra Method for separating non-metallic substrates
US20030047545A1 (en) * 2000-04-11 2003-03-13 Mckee Terry Method for laser drilling
US20020086544A1 (en) * 2000-12-15 2002-07-04 Adrian Boyle Laser machining of semiconductor materials

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9087850B2 (en) 2009-07-06 2015-07-21 Renesas Electronics Corporation Method for manufacturing semiconductor device
US9263274B2 (en) 2009-07-06 2016-02-16 Renesas Electronics Corporation Method for manufacturing semiconductor device
WO2020117130A1 (fr) * 2018-12-07 2020-06-11 Intech-Les, Razvojni Center, D.O.O. Amélioration de la rugosité de surface au moyen d'un laser
EP3685954A1 (fr) * 2019-01-22 2020-07-29 Synova S.A. Procédé et appareil de découpe de pièce à l'aide d'un faisceau laser complex guidé par jet de fluide
WO2020152136A1 (fr) * 2019-01-22 2020-07-30 Synova S.A. Procédé et appareil de découpe ou d'ablation d'une pièce à travailler avec un faisceau laser à jet de fluide guidé complexe
WO2021018431A1 (fr) * 2019-07-29 2021-02-04 Wsoptics Technologies Gmbh Procédé d'usinage par faisceau d'une pièce de fabrication tabulaire ou tubulaire
CN113199149A (zh) * 2020-01-15 2021-08-03 大族激光科技产业集团股份有限公司 激光去除镀层的加工工艺
CN113199149B (zh) * 2020-01-15 2023-08-11 大族激光科技产业集团股份有限公司 激光去除镀层的加工工艺

Also Published As

Publication number Publication date
TW200633809A (en) 2006-10-01
TWI465310B (zh) 2014-12-21
EP1905067A1 (fr) 2008-04-02
NL1028588C2 (nl) 2006-09-25
JP2008537511A (ja) 2008-09-18
CN101147241B (zh) 2011-01-12
CN101147241A (zh) 2008-03-19
KR20070121793A (ko) 2007-12-27

Similar Documents

Publication Publication Date Title
EP1905067A1 (fr) Procede et dispositif de separation de produits a l'aide d'un bord tranche commande et produit separe
CA2180412C (fr) Methode et appareil pour la fabrication de pieces en trois dimensions
JP2001071256A (ja) 研磨パッドの溝形成方法及び装置並びに研磨パッド
KR20080099471A (ko) 분단 및 모깍기 용 인서트
JP2006315170A (ja) 熱可塑性成形板の機械加工装置
CN110385607B (zh) 切削刀具的整形方法
JP2002192417A (ja) 溝加工装置およびこの溝加工装置を用いた溝加工方法
TWI397357B (zh) 用雷射以銳角切割電子元件之載具的方法與裝置
CN111107967B (zh) 用于工件加工的方法、计算机程序产品以及工件加工设备
JP4501502B2 (ja) セラミック回路基板の製造方法
KR100909117B1 (ko) 캐리어로부터 캐리어부분을 제거하기 위한 방법과 장치 및 캐리어로부터 제거된 제품
JP2017135270A (ja) ウエーハの加工方法
JP2018176399A (ja) 金属基板の溝形成方法
JP6160815B2 (ja) レーザ加工方法およびレーザ加工システム
WO2017199879A1 (fr) Système de traitement composite et procédé de découpe par laser
JP3713915B2 (ja) 板材加工装置
KR20040018315A (ko) 웨이퍼 커팅 머신
JP2004249387A (ja) 砂型製造用マスタ型の切削加工方法
JPH0592347A (ja) 輪郭形状の突き加工方法
CN114905329A (zh) 一种蜂窝芯曲面的超声切削方法
JPH11277323A (ja) ゲート部打ち抜き方法及び装置
JPH06216241A (ja) ウェーハ等の切削方法
JP2024034720A (ja) パッケージ基板の分割方法
KR20000032025A (ko) 레이저를 이용한 패턴 가공방법 및 그 장치
JP2003062624A (ja) プレス打抜き装置のスクラップ材排出構造

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200680009225.7

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2008502936

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2006716694

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: RU

WWE Wipo information: entry into national phase

Ref document number: 1020077024212

Country of ref document: KR