WO2006112344A1 - 光学情報記録媒体および光学情報記録媒体への記録方法 - Google Patents
光学情報記録媒体および光学情報記録媒体への記録方法 Download PDFInfo
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- WO2006112344A1 WO2006112344A1 PCT/JP2006/307815 JP2006307815W WO2006112344A1 WO 2006112344 A1 WO2006112344 A1 WO 2006112344A1 JP 2006307815 W JP2006307815 W JP 2006307815W WO 2006112344 A1 WO2006112344 A1 WO 2006112344A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24067—Combinations of two or more layers with specific interrelation
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
Definitions
- the present invention relates to an optical recording information medium capable of recording / reproducing or rewriting information at high density using optical means such as laser beam irradiation, and a recording method for the optical information recording medium. .
- Magneto-optical recording media, phase-change recording media, and the like are known as media capable of recording information in a large capacity and capable of being reproduced and rewritten at high speed.
- These optical information recording media are used for recording / reproducing and rewriting the difference in optical characteristics of the recording material caused by locally irradiating the laser beam.
- the magneto-optical recording medium uses the difference in the rotation angle of the polarization plane of the reflected light caused by the difference in the magnetized state.
- the phase change type recording medium utilizes the fact that the amount of reflected light with respect to light of a specific wavelength differs between the crystalline state and the amorphous state, and the recorded information is modulated by modulating the laser output power. New information can be overwritten at the same time as erasing. Therefore, there is an advantage that information signals can be rewritten at high speed.
- the conventional optical information recording medium (hereinafter referred to as recording medium) 200 has a layer structure as shown in FIG. 4.
- Phase-change recording medium widely used as DVD-RAM having a capacity of 4.7 GB on one side Show the body as an example.
- the recording medium 200 includes a light incident side protective layer 102, a light incident side diffusion prevention layer 103, a recording layer 104, a reflection side diffusion prevention layer 105, a reflection side protection layer 106, and a light absorption layer on a transparent substrate 101.
- a layer 107 and a reflective layer 108 are provided in this order. These layers are mainly formed by sputtering. Further, on the reflective layer 108, a resin layer 109, an adhesive layer 110, and a base material 111 for bonding are provided.
- the material of the light incident side protective layer 102 is, for example, a material mainly composed of ZnS and having a refractive index of 2.0 or more with respect to the wavelength of the laser light.
- the thickness of the protective layer 102 on the light incident side is reduced to about 130 nm. It was necessary to make it thicker. Therefore, there is a problem that the time for film formation becomes long and the production cost becomes high.
- the thickness of the light incident side protective layer 102 is 50 ⁇ m or less.
- the optical characteristics of the recording medium 200 can be satisfied.
- the transparent substrate 101 is damaged by the heat generated from the recording layer 104 and the quality of the recording signal is deteriorated. there were.
- ZnS, Zr oxide or Cr oxide is used as the main component of the reflective side protective layer 106
- A1 oxide, Si oxide is used as the main component of the light incident side protective layer 102.
- An optical information recording medium using other materials such as copper oxide, Mg oxide or fluoride has been proposed (for example, see Patent Document 1).
- Patent Document 1 Japanese Patent Laid-Open No. 2005-4950
- the optical information recording medium of the present invention has optical characteristics obtained by irradiation with a substrate having a guide groove, a reflective layer, a light absorbing layer, a reflective side protective layer, and laser light.
- a recording layer in which the film reversibly changes a light incident side protective layer having a film thickness of 50 nm or less, a resin layer, and a transparent substrate irradiated with laser light in this order.
- the light incident side material layer closest to the transparent substrate has the smallest internal stress among the plurality of material layers.
- an optical information recording medium having good corrosion resistance and good recording / reproduction characteristics capable of recording with practically sufficient recording sensitivity can be obtained.
- FIG. 1 is a diagram showing a layer structure of an optical information recording medium according to the present invention.
- FIG. 2 is a graph showing the laser wavelength dependence of the refractive index of the material layer in the optical information recording medium according to the present invention.
- FIG. 3 is a diagram showing a result of measuring internal stress of a material layer in an optical information recording medium according to the present invention.
- FIG. 4 is a diagram showing a layer structure of a conventional optical information recording medium.
- optical information recording medium (hereinafter referred to as recording medium) relating to the present invention will be described in detail below.
- the recording medium has at least a reflective layer, a light absorbing layer, a reflective side protective layer, a recording layer, a light incident side protective layer, a resin layer, and a transparent substrate in this order on a substrate.
- the substrate has a guide groove for guiding the laser beam.
- a resin such as PMMA or glass may be used.
- grooves and lands are alternately formed on the substrate.
- the film thickness of the substrate is not particularly limited, but is preferably 0.1 mm or more and 1.2 mm or less. If the thickness is 0.1 mm or more, thermal damage during the formation of the thin film can be easily suppressed. If the thickness is 2 mm or less, the portability of the recording medium can be ensured.
- the reflective layer is made of a material mainly containing Ag or A1.
- “mainly includes” means that it accounts for the largest proportion of the constituent elements in the material, and hereinafter the same meaning is used.
- the film thickness is preferably 80 nm or more and less than 300 nm. Furthermore, 1-20 nm or more and less than 200 nm are preferred.
- Ag or A1 which is a material with high thermal conductivity, is the main component, and by increasing the film thickness, the light absorption layer at the time of laser irradiation can be rapidly cooled, and the amorphous recorded in the recording layer Recrystallization of the mark can be suppressed. Furthermore, by using the film thickness of the present embodiment, it is possible to suppress a decrease in mass productivity due to a long film formation time and a decrease in recording mark quality while maintaining good recording sensitivity.
- the light absorption layer is made of a material mainly containing Si.
- the film thickness is preferably 20 nm or more and less than 50 nm.
- the light absorption layer is made of a mixed material of Si and Cr. This is because it is possible to further increase the ratio (absorption rate) between the crystal light absorption rate and the amorphous light absorption rate of the recording layer, and to further improve the erasing characteristics of the recording medium.
- the film thickness is preferably 25 nm or more and less than 40 nm.
- the reflective-side protective layer mainly contains Zn sulfide, and further contains at least one compound selected from Sn, Ta, or Bi oxides or Si nitrides.
- the film thickness is preferably 25 nm or more and less than 45 nm.
- the reflection-side protective layer is preferably a mixed material of ZnO and SiO. Thereby, thermal conductivity can be lowered.
- the film thickness is more preferably 30 nm or more and less than 40 nm. This prevents the recording sensitivity from deteriorating due to the short distance between the recording layer and the light absorption layer, and reduces the crystal of the recording medium. The difference in the amount of reflected light between the state and the amorphous state can be increased.
- the reflection-side protective layer may be composed of a plurality of material layers. In that case, the layer made of a mixed material of ZnS and SiO is preferably the thickest film.
- the recording layer mainly contains Ge or Te, and further contains at least one element selected from Sb, Bi, or In, and the film thickness is preferably 3 nm or more and less than 12 nm.
- the film thickness is more preferably 5 nm or more and less than 10 nm.
- the light incident side protective layer plays a role of suppressing thermal damage of the resin layer while being a thin layer having a film thickness of 50 nm or less.
- the light incident side protective layer of the present invention has a plurality of material layers, and constitutes a light incident side material layer (hereinafter referred to as material layer A) closest to the transparent substrate among the plurality of material layers.
- material layer A a light incident side material layer closest to the transparent substrate among the plurality of material layers.
- the resin layer is easily damaged by the heat absorbed by the recording layer during recording, and the signal mark quality deteriorates. It becomes easy to do.
- the resin layer is heated and easily contracts by heat, the resin layer absorbs moisture, and heat is applied to the resin layer to cause hydrolysis. It is conceivable that the interface between the layer and the light incident side protective layer easily peels off. Therefore, in this embodiment, by providing a water-impervious material layer having a film thickness of 50 nm or less and a small internal stress between the recording layer and the resin layer, water is supplied from the outside to the resin layer. Prevent ingress. As a result, thermal damage to the resin layer can be suppressed.
- a water-insulating material layer having a small internal stress may be provided between the transparent substrate and the resin layer. This prevents water from entering the resin layer from the outside through the transparent substrate. As a result, thermal damage to the resin layer can be suppressed.
- the magnitude of the internal stress of the layer constituting the material layer A is preferably _300 N / mm 2 or more and 300 N / mm 2 or less.
- internal stress is part of the recording medium. It is preferable to measure each material layer formed and compare the results to make the material layer having the smallest value the material layer having the smallest internal stress. However, such measurement is difficult because the internal stress of the material layer is affected by other layers in the recording medium. Therefore, the fact that material layer A has the smallest internal stress means that, as a result of comparing the measurement values obtained by creating each material layer on a substrate having a certain material and film thickness, material layer A The internal stress of is taken as being the smallest value. The calculation method of the internal stress of the thin film is shown below.
- a single layer of ZnS-SiO with various compositions is formed on a substrate (material: BK7) with a thickness of approximately 0.2 mm.
- the internal stress ⁇ can be obtained from the following equation.
- E is the Young's modulus of the substrate
- V is the Poisson's ratio of the substrate
- b is the substrate thickness
- 1 is the measurement length
- d is the thickness of the thin film
- 5 is the amount of deflection change.
- the heel is 79200 N / mm 2
- V is 0.214
- 1 is 10 mm
- b is 0.2 mm.
- the thin film was deposited by sputtering with the target of lOOnm. In this case, in order to compare the internal stress of each material layer, parameters other than ⁇ are set to constant values. Therefore, here, when the internal stress is small, the amount of change in deflection is small.
- Figure 3 shows the stress measurement results. In this case, it can be seen that the internal stress of the thin film is relatively small when X is 0.3 or more and 0.9 or less.
- the difference in the amount of reflected light between the crystalline state and the amorphous state of the recording medium can be increased as the refractive index is decreased.
- SiO as at least one layer of a plurality of material layers
- Figure 2 Materials whose main component is listed.
- the extinction coefficient of at least one material layer constituting the light incident side protective layer is preferably 0.05 or less. As a result, the material layer can be prevented from absorbing light, and the recording layer can be efficiently irradiated with light.
- the material layer A is preferably an organic material because a dense film with low internal stress and high water-blocking properties can be obtained. Any material that is transparent to incident light may be used.
- the material layer A mainly includes a sulfide of Zn, and further includes at least one compound selected from an oxide of Si, Ta, or Bi, or a nitride of Si. More preferably, it contains a sulfide of Zn and an oxide of Si, and is expressed as (ZnS) (SiO 2) (0.3 ⁇ x ⁇ 0.9). This
- the refractive index of the light incident side protective layer can be increased.
- the particle shape of the thin film can be made uniform, the cause of the noise of the recording medium can be eliminated.
- the thermal conductivity is lower than that of a general oxide material, so that it is easy to reduce the laser power during recording.
- the film thickness of the material layer A is preferably 2 nm or more and less than 20 nm, more preferably 5 nm or more and 15 nm or less. As a result, the deterioration of the corrosion resistance can be suppressed, and the difference in the amount of reflected light between the crystalline state and the amorphous state of the recording medium can be increased.
- At least one of the material layers other than material layer A is selected from oxides of Si, Zn, Zr, Al, or Mg, nitrides of Zr, Al, or B, or fluoride power of Ce, La, or Mg. Contains at least one compound. Furthermore, a silicon oxide material having the smallest extinction coefficient and refractive index is most preferable.
- the resin layer preferably has a film thickness of lxm or more and less than 30xm. Further, it is preferably less than 25 xm. Within this range, it is possible to apply the resin uniformly when forming the resin layer.
- a material for the resin layer it is preferable to add a compound having an acrylic ester compound as a main component and having water repellency.
- trimethylolpropane triarylate neopentylglycol ditalylate, p-dimethylaminobenzoic acid ethyl ester, tricyclodecane—
- solvents such as dioxane glycol ditalylate, neopentyl glycol ditalylate, and tetrahydrofurfuryl atallylate
- a compound having water repellency including alkoxysilane, tetraalkoxysilane, fluoroalkyltrimethoxysilane, and / or a fluorine-based surfactant.
- fluorine surfactant for example, Megafac F-142D, F-144D, F-150, F-171, F-177, F-183, and Defensor TR-220K manufactured by Dainippon Ink and Chemicals, Inc. are preferable.
- the thickness of the transparent substrate is preferably 570 ⁇ m or more and 600 ⁇ m or less. More specifically, in order to set the distance from the substrate surface on the light incident side to the recording layer to 600 ⁇ m ⁇ 30 im as in the conventional DVD-RAM configuration, the force is preferably 575 ⁇ m or more and 595 ⁇ m or less. ,.
- the substrate on which the layers are laminated needs to improve the transferability of the guide groove when forming the substrate, and the transparent substrate needs to have uniform birefringence over the entire surface of the substrate. It is. It is known that the amount of reflected light of incident light greatly changes due to the birefringence of the substrate on the light incident side. In order to obtain a uniform amount of reflected light over the entire surface of the recording medium, the birefringence distribution of the transparent substrate is possible. It was necessary to suppress as much as possible. In the configuration of the present invention, it is possible to optimize the substrate molding conditions only by making the birefringence uniform without considering the groove transferability of the substrate in the transparent substrate.
- the birefringence of the transparent substrate is preferably 0 nm ⁇ 30 nm over the entire surface of the substrate.
- a water-impervious layer may be formed in advance on the transparent substrate. This makes it easy to bond the transparent substrate and the substrate on which the layers are laminated.
- This layer is made of the same material as the material layer A, and vapor deposition methods such as sputtering, PVD, and CVD can be used.
- a resin layer with improved heat resistance As a method of suppressing thermal damage of the resin layer, in addition to providing the water-proof material layer A with small internal stress.
- a resin material a resin material having water resistance or water repellency can be applied.
- a resin layer having improved adhesion to the light incident side protective layer may be used in the composition of the present invention. In this case, the interface peeling between the resin layer and the light incident side protective layer is suppressed. Power S can be.
- an optical head having a semiconductor laser light source and an objective lens, a driving device for guiding the laser light to a position to be irradiated, and a position in a track direction and a direction perpendicular to the film surface are controlled.
- a recording / reproducing apparatus including at least a tracking and focusing control apparatus, a laser driving apparatus for modulating laser power, and a rotation control apparatus for rotating a recording medium is used.
- Recording and erasing of signals are performed by rotating a recording medium using a rotation control device, and squeezing and irradiating a laser beam to a minute spot.
- the EFM modulation method is used as the signal method.
- the power level of the laser light is divided into an amorphous state generation power level at which a part of the recording layer can reversibly change to an amorphous state, and a crystal state generation power level at which a part of the recording layer can reversibly change to a crystalline state.
- a recording mark or an erasure part is formed, and information is recorded, erased or overwritten.
- the portion that is irradiated with the power of the amorphous state generation power level is formed by a pulse IJ, so-called multi-pulse. It should be formed with pulses that are not multipulses.
- the laser wavelength, the optical pick numerical aperture, the laser output, the linear velocity of the recording medium with respect to the laser beam, and the like are appropriately adjusted, and the laser irradiation during recording Recording is performed under the condition that the heat generation of the constituent layers of the recording medium is suppressed and the resin layer does not discolor / deform or peel off between the resin layer and the light incident side protective layer.
- the recording conditions are set so that the heat generated by the heat generation of the recording layer is not easily transmitted to the resin layer and the resin layer does not cause thermal damage. When the resin layer is damaged by heat, the quality of the reproduced signal deteriorates.
- the cause is that the resin layer is deformed due to the heat damage. It is possible to make it.
- the resin layer deteriorates, the deterioration becomes noticeable when recording is repeated several hundred times. That is, just recording several times on the same track does not impair the quality of the playback signal because the resin layer is less degraded, but when recording several hundred times on the same track, the degradation of the resin layer proceeds.
- the quality of the playback signal gradually deteriorates.
- the amount of heat given to the recording layer at the time of laser irradiation increases with the area of the light spot, the light irradiation energy, and the irradiation time of the laser light, and this easily causes thermal damage to the resin layer.
- the laser wavelength and optical pick numerical aperture are adjusted to adjust the size of the light spot, the laser output is adjusted to adjust the light irradiation energy to the recording layer, and the line of the recording medium to the laser light Adjust the speed and adjust the laser beam irradiation time.
- the wavelength of the laser beam does not cause thermal damage to the resin layer due to the amount of heat applied to the recording layer by laser beam irradiation, preferably 600 nm to 700 nm.
- the spot size of the laser beam is generally prevented from increasing in proportion to the wavelength, and high-density recording can be performed.
- the wavelength of the laser beam is more preferably 640 nm or more and 680 nm or less.
- the numerical aperture of the optical pick is preferably not less than 0.55 and not more than 0.70. As a result, it is possible to perform recording at a high density, and it is possible to prevent thermal damage to the resin layer caused by excessively narrowing the laser spot.
- the linear velocity of the recording medium with respect to the laser beam is preferably 18 m / s or more and 80 m / s or less. Further, it is more preferably 22 m / s or more. This prevents heat from being accumulated in the resin layer and prevents thermal damage, and prevents the laser from becoming difficult to follow due to the large eccentricity of the recording medium due to increased vibration of the motor. it can.
- the resin layer can be made less susceptible to thermal damage, and good recording / reproducing characteristics can be obtained.
- the light incident side material layer (material layer A) closest to the transparent substrate has low internal stress, high water shielding, and low thermal conductivity. Corrosion resistance and recording sensitivity can be improved by using materials. Further, by using a low refractive index material for the other layers, the difference in the amount of reflected light between the crystalline state and the amorphous state of the recording medium can be increased. Therefore, increase the thickness of the reflective-side protective layer. Therefore, it is possible to improve the recording sensitivity. Therefore, the recording medium
- so-called land group recording in which information signals are recorded, reproduced, and erased in both the groove portion and the land portion of the guide groove, leads to an increase in capacity.
- the sum of the widths of the groove and land in the direction perpendicular to the groove direction is preferably 1.40 / im or less. 1. Force that allows recording even with grooves of 40 / im pitch or higher 1. Higher density recording with grooves of 40 / m or lower has the effect of suppressing thermal damage of the resin layer according to the present invention. This is because it appears more prominently.
- the recording medium 100 includes a reflective layer 102, a light absorbing layer 003, and a reflective side protective layer 0 on a substrate 001.
- reflection side diffusion prevention layer 005 recording layer 006, light incident side diffusion prevention layer 007, light incident side protection layer 012 (first material layer 008 and second material layer 009), and resin layer 010 And a transparent substrate 011 in this order.
- the substrate 001 a disk-shaped polycarbonate resin substrate having a thickness of 0.6 mm and a diameter of 120 mm was used.
- the reflective layer 002 has a thickness of 160 nm using an Ag Pd Cu (at%) alloy target.
- the light absorbing layer 003 is shaped to have a film thickness of 30 nm using a Si Cr (at%) alloy target.
- the reflection-side protective layer 004 uses a target in which 20 mol% of SiO is mixed with ZnS.
- the film thickness was such that the reflectivity Rc when the recording layer was in an amorphous state was 15% or more and the group and land signal amplitudes were equal. In this example, the film thickness was 32 nm.
- the reflection layer 002, the light absorption layer 003, and the reflection-side protection layer 004 were formed by sputtering using Ar gas in a vacuum film formation chamber.
- the reflection-side diffusion prevention layer 005 is formed by flowing a mixed gas of Ar and nitrogen gas into the vacuum film formation chamber so that the nitrogen partial pressure becomes 20%, and using a Ge Cr (at%) alloy target to obtain a film thickness of 2 nm. Formed.
- the recording layer 006 was formed to a thickness of 8 nm by flowing Ar gas into the vacuum film formation chamber and using a Ge Sb Bi Te (at%) target.
- the light incident side diffusion prevention layer 007 is made by flowing a mixed gas of Ar and nitrogen gas into the vacuum film formation chamber so that the nitrogen partial pressure becomes 20%, and using a Ge Cr (at%) alloy target, Formed to be.
- the light incident side protective layer 012 includes a first material layer 008 on the recording layer 006 side and a second material layer 009 on the transparent substrate 011 (described later) side.
- the first material layer 008 was formed so as to have a film thickness of 5 nm by RF sputtering using an Ar gas flowing in a vacuum film formation chamber and using a SiO target. At this time, in order to examine the refractive index, when the first material layer 008 single layer was separately formed on the glass piece, the refractive index at a wavelength of 660 nm was 1.48.
- the first material layer 008 may be made of BN, CeF, LaF, MgF, MgO, or MgSiO.
- the second material layer 009 is formed by flowing Ar gas into the vacuum film formation chamber and using a (ZnS) (SiO 2) (mol./ 0 ) mixed target so as to have a film thickness of 5 nm by RF sputtering. Formed.
- a second material layer 009 single layer is separately formed on a glass piece, the refractive index at a wavelength of 660 nm is 2.10, and the normal refractive index is 1.8 to 2. It was within the range of 4.
- the second material layer 009 may be made of ZnO, GaO, SnO, BiO.
- the resin layer 010 is formed by spin coating, and 56 parts of an acrylic ultraviolet curable resin (SD-715, manufactured by Dainippon Ink & Chemicals, Inc.) and a fluorine surface modifier (Dainippon Ink Chemical Co., Ltd.) A solvent in which 10 parts of Defenser TR_220K manufactured by Kogyo Co., Ltd. was mixed was formed by spin coating so that the film thickness was 20 ⁇ m.
- SD-715 acrylic ultraviolet curable resin
- a fluorine surface modifier Dainippon Ink Chemical Co., Ltd.
- the resin was cured by irradiating ultraviolet rays to prepare a recording medium.
- the transparent substrate 011 is a substrate formed by optimizing the formation conditions so that the birefringence is uniform.
- the birefringence of the transparent substrate 1 formed by optimizing the formation conditions so as to improve the transferability of the grooves when forming the recording medium was 0 nm ⁇ 50 nm over the entire surface of the recording medium.
- a layer having a water shielding property is formed in advance on the bonding surface of the transparent substrate 011. This layer was formed by RF sputtering using a (ZnS) (Si 0) (mol%) mixed target so as to have a film thickness of lOnm.
- the sputtering method is not limited to RF sputtering.
- a pulse DC method is used in an atmosphere in which Ar gas and oxygen gas are mixed using a target in which oxygen is lost and the target is made conductive. Sputtering may be used.
- a recording medium 100 was prepared in the same manner as in Example 1 except that the thickness of the first material layer 008 was 2 nm (Example 3).
- a recording medium was prepared in the same manner as in Example 1 except that the thickness of the first material layer 008 was lOnm. (Example 4)
- a recording medium was prepared in the same manner as in Example 1 except that the thickness of the second material layer 009 was 3 nm.
- a recording medium was prepared in the same manner as in Example 1 except that the second material layer 009 had a thickness of lOnm, and the reflective-side protective layer 004 had a thickness of 30 nm.
- the second material layer 009 was prepared using a (ZnS) (SiO 2) target, and the recording medium was prepared in the same manner as in Example 1.
- the first material layer 008 is formed using the same (ZnS) (SiO 2) target as the second material layer 009.
- the recording medium was prepared in the same manner as in Example 1 except that the thickness of the reflection-side protective layer 004 was 36 nm.
- Pl is the amorphous state generation power level at which a part of the recording layer 006 can be reversibly changed to an amorphous state by laser light irradiation, and the crystalline state generation power that can be reversibly changed to a crystalline state by laser light irradiation.
- the level was P2. Recording marks or erased portions were formed by modulating the laser power between P1 and P2, and information was recorded, erased, and overwritten.
- the signal system was the EFM modulation system, the bit length was 0.28 ⁇ , and the disc rotation speed was adjusted accordingly.
- the track pitch was 1.20 / im, that is, a substrate in which grooves and lands were alternately formed every 0.60 ⁇ .
- Substrates having different width ratios between the groove and the land may be used.
- the value of P1 at which the ratio of playback output to noise (C / ⁇ ratio) peaks was obtained.
- the linear velocity between the optical pick and the recording medium 100 is 24 m / s
- the case where the value of P1 is less than 22 mW is ⁇
- the case where it is 22 mW or more is ⁇ .
- the linear velocity was 64 m / s
- the case where the value of P1 was less than 33 mW was marked as ⁇
- the case where it was above 33 mW was marked as ⁇ .
- Table 1 shows the results of the evaluation experiment.
- Comparative Example 1 the recording sensitivity was not as good as that of the example. In Comparative Example 2, there was a problem with corrosivity.
- the present invention can also be applied when the light-incident side protective layer is made of three or more material layers.
- optical information recording medium and the recording method thereof according to the present invention are applicable to various recording media.
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Abstract
Description
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Priority Applications (2)
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JP2007521214A JPWO2006112344A1 (ja) | 2005-04-15 | 2006-04-13 | 光学情報記録媒体および光学情報記録媒体への記録方法 |
US11/630,519 US20080285417A1 (en) | 2005-04-15 | 2006-04-13 | Optical Information Recording Medium and Method for Recording to the Same |
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JP2005117966 | 2005-04-15 | ||
JP2005-117966 | 2005-04-15 |
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US (1) | US20080285417A1 (ja) |
JP (1) | JPWO2006112344A1 (ja) |
CN (1) | CN1977327A (ja) |
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WO (1) | WO2006112344A1 (ja) |
Cited By (2)
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JP2017151409A (ja) * | 2016-02-22 | 2017-08-31 | 株式会社タムロン | 赤外線透過膜、光学膜、反射防止膜、光学部品、光学系及び撮像装置 |
WO2023008432A1 (ja) * | 2021-07-29 | 2023-02-02 | 日本電気硝子株式会社 | 相変化材料 |
Citations (6)
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WO1998021718A1 (fr) * | 1996-11-14 | 1998-05-22 | Asahi Kasei Kogyo Kabushiki Kaisha | Moyen d'enregistrement optique d'informations et son procede de fabrication |
JP2001143319A (ja) * | 1999-11-16 | 2001-05-25 | Nec Corp | 光ディスク媒体 |
JP2002092950A (ja) * | 2000-09-12 | 2002-03-29 | Ricoh Co Ltd | 光情報記録媒体およびその製造方法 |
JP2004327016A (ja) * | 2003-04-08 | 2004-11-18 | Tdk Corp | 光記録ディスク |
JP2005063634A (ja) * | 2003-07-25 | 2005-03-10 | Matsushita Electric Ind Co Ltd | 情報記録媒体とその製造方法 |
JP2005093012A (ja) * | 2003-09-19 | 2005-04-07 | Ricoh Co Ltd | 相変化型光情報記録媒体 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040202097A1 (en) * | 2003-04-08 | 2004-10-14 | Tdk Corporation | Optical recording disk |
KR20040099155A (ko) * | 2003-05-16 | 2004-11-26 | 마츠시타 덴끼 산교 가부시키가이샤 | 광 정보 기록 매체 및 그 제조 방법 |
TWI370449B (en) * | 2003-07-25 | 2012-08-11 | Panasonic Corp | Information recording medium and method for producing the same |
-
2006
- 2006-04-13 WO PCT/JP2006/307815 patent/WO2006112344A1/ja active Application Filing
- 2006-04-13 US US11/630,519 patent/US20080285417A1/en not_active Abandoned
- 2006-04-13 JP JP2007521214A patent/JPWO2006112344A1/ja active Pending
- 2006-04-13 CN CNA2006800004260A patent/CN1977327A/zh active Pending
- 2006-04-14 TW TW095113355A patent/TW200639855A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998021718A1 (fr) * | 1996-11-14 | 1998-05-22 | Asahi Kasei Kogyo Kabushiki Kaisha | Moyen d'enregistrement optique d'informations et son procede de fabrication |
JP2001143319A (ja) * | 1999-11-16 | 2001-05-25 | Nec Corp | 光ディスク媒体 |
JP2002092950A (ja) * | 2000-09-12 | 2002-03-29 | Ricoh Co Ltd | 光情報記録媒体およびその製造方法 |
JP2004327016A (ja) * | 2003-04-08 | 2004-11-18 | Tdk Corp | 光記録ディスク |
JP2005063634A (ja) * | 2003-07-25 | 2005-03-10 | Matsushita Electric Ind Co Ltd | 情報記録媒体とその製造方法 |
JP2005093012A (ja) * | 2003-09-19 | 2005-04-07 | Ricoh Co Ltd | 相変化型光情報記録媒体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017151409A (ja) * | 2016-02-22 | 2017-08-31 | 株式会社タムロン | 赤外線透過膜、光学膜、反射防止膜、光学部品、光学系及び撮像装置 |
WO2023008432A1 (ja) * | 2021-07-29 | 2023-02-02 | 日本電気硝子株式会社 | 相変化材料 |
Also Published As
Publication number | Publication date |
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US20080285417A1 (en) | 2008-11-20 |
CN1977327A (zh) | 2007-06-06 |
JPWO2006112344A1 (ja) | 2008-12-11 |
TW200639855A (en) | 2006-11-16 |
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