WO2006094980A2 - Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial - Google Patents
Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial Download PDFInfo
- Publication number
- WO2006094980A2 WO2006094980A2 PCT/EP2006/060522 EP2006060522W WO2006094980A2 WO 2006094980 A2 WO2006094980 A2 WO 2006094980A2 EP 2006060522 W EP2006060522 W EP 2006060522W WO 2006094980 A2 WO2006094980 A2 WO 2006094980A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor material
- photovoltaic cell
- metal halide
- layer
- group
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 239000011149 active material Substances 0.000 title abstract description 5
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 11
- 229910007709 ZnTe Inorganic materials 0.000 claims abstract description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 150000002367 halogens Chemical class 0.000 claims abstract description 8
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 6
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 6
- 239000011737 fluorine Substances 0.000 claims abstract description 6
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 42
- 229910001507 metal halide Inorganic materials 0.000 claims description 28
- 150000005309 metal halides Chemical class 0.000 claims description 25
- -1 metal halide ions Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 8
- 239000006096 absorbing agent Substances 0.000 claims description 6
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 3
- 229910016509 CuF 2 Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 description 15
- 239000011572 manganese Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical group [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910017231 MnTe Inorganic materials 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/817,167 US20080163928A1 (en) | 2005-03-09 | 2006-03-07 | Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material |
JP2008500185A JP2008533712A (ja) | 2005-03-09 | 2006-03-07 | 光電活性半導体材料を含む光電池 |
CA002599412A CA2599412A1 (en) | 2005-03-09 | 2006-03-07 | Photovoltaic cell containing a semiconductor photovoltaically active material |
EP06708672A EP1859487A2 (de) | 2005-03-09 | 2006-03-07 | Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005010790.7 | 2005-03-09 | ||
DE102005010790A DE102005010790A1 (de) | 2005-03-09 | 2005-03-09 | Photovoltaische Zelle mit einem darin enthaltenen photovoltaisch aktiven Halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006094980A2 true WO2006094980A2 (de) | 2006-09-14 |
WO2006094980A3 WO2006094980A3 (de) | 2006-12-07 |
Family
ID=36677215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/060522 WO2006094980A2 (de) | 2005-03-09 | 2006-03-07 | Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080163928A1 (de) |
EP (1) | EP1859487A2 (de) |
JP (1) | JP2008533712A (de) |
CA (1) | CA2599412A1 (de) |
DE (1) | DE102005010790A1 (de) |
WO (1) | WO2006094980A2 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4241038B2 (ja) | 2000-10-30 | 2009-03-18 | ザ ジェネラル ホスピタル コーポレーション | 組織分析のための光学的な方法及びシステム |
CN100360721C (zh) * | 2001-04-04 | 2008-01-09 | 日矿金属株式会社 | ZnTe系化合物半导体单晶的制造方法和ZnTe系化合物半导体单晶及半导体器件 |
US7567349B2 (en) | 2003-03-31 | 2009-07-28 | The General Hospital Corporation | Speckle reduction in optical coherence tomography by path length encoded angular compounding |
US7447408B2 (en) | 2004-07-02 | 2008-11-04 | The General Hospital Corproation | Imaging system and related techniques |
EP1793731B1 (de) | 2004-08-24 | 2013-12-25 | The General Hospital Corporation | Bildgebungsgerät mit einer Fluidabgabevorrichtung und einer Pull-Back-Vorrichntung |
WO2006058346A1 (en) | 2004-11-29 | 2006-06-01 | The General Hospital Corporation | Arrangements, devices, endoscopes, catheters and methods for performing optical imaging by simultaneously illuminating and detecting multiple points on a sample |
ATE451669T1 (de) | 2005-04-28 | 2009-12-15 | Gen Hospital Corp | Bewertung von bildmerkmalen einer anatomischen struktur in optischen kohärenztomographiebildern |
EP1889037A2 (de) | 2005-06-01 | 2008-02-20 | The General Hospital Corporation | Vorrichtung, verfahren und system zur abbildung phasenaufgelöster optischer frequenzdomänen |
EP2267404B1 (de) | 2005-08-09 | 2016-10-05 | The General Hospital Corporation | Gerät und Verfahren zur Durchführung von polarisationsbasierter Quadraturdemulation bei optischer Kohärenztomographie |
US7872759B2 (en) | 2005-09-29 | 2011-01-18 | The General Hospital Corporation | Arrangements and methods for providing multimodality microscopic imaging of one or more biological structures |
US8145018B2 (en) | 2006-01-19 | 2012-03-27 | The General Hospital Corporation | Apparatus for obtaining information for a structure using spectrally-encoded endoscopy techniques and methods for producing one or more optical arrangements |
EP2289397A3 (de) | 2006-01-19 | 2011-04-06 | The General Hospital Corporation | Verfahren und Systeme zur optischen Bildgebung von epithelialen Luminalorganen durch Strahlenabtastung dieser |
EP1986545A2 (de) | 2006-02-01 | 2008-11-05 | The General Hospital Corporation | Vorrichtung zur anwendung mehrerer elektromagnetischer strahlungen auf einer probe |
US10426548B2 (en) | 2006-02-01 | 2019-10-01 | The General Hosppital Corporation | Methods and systems for providing electromagnetic radiation to at least one portion of a sample using conformal laser therapy procedures |
EP2306141A1 (de) | 2006-02-24 | 2011-04-06 | The General Hospital Corporation | Verfahren und Systeme zur Durchführung von winkelaufgelöster optischer Kohärenztomografie im Fourier-Bereich |
US8175685B2 (en) | 2006-05-10 | 2012-05-08 | The General Hospital Corporation | Process, arrangements and systems for providing frequency domain imaging of a sample |
WO2008049118A2 (en) | 2006-10-19 | 2008-04-24 | The General Hospital Corporation | Apparatus and method for obtaining and providing imaging information associated with at least one portion of a sample and effecting such portion(s) |
JP5607610B2 (ja) | 2008-05-07 | 2014-10-15 | ザ ジェネラル ホスピタル コーポレイション | 構造の特徴を決定する装置、装置の作動方法およびコンピュータアクセス可能な媒体 |
EP2309923B1 (de) | 2008-07-14 | 2020-11-25 | The General Hospital Corporation | Vorrichtung und verfahren für eine farbendoskopie |
JP2012515576A (ja) | 2009-01-20 | 2012-07-12 | ザ ジェネラル ホスピタル コーポレイション | 内視鏡生検装置、システム、及び方法 |
WO2010091190A2 (en) | 2009-02-04 | 2010-08-12 | The General Hospital Corporation | Apparatus and method for utilization of a high-speed optical wavelength tuning source |
JP5819823B2 (ja) | 2009-07-14 | 2015-11-24 | ザ ジェネラル ホスピタル コーポレイション | 血管の内部の流れおよび圧力を測定する装置および装置の作動方法 |
PT2542145T (pt) | 2010-03-05 | 2020-11-04 | Massachusetts Gen Hospital | Sistemas, métodos e meios acessíveis por computador que proporcionam imagens microscópicas de pelo menos uma estrutura anatómica numa resolução particular |
WO2011131801A1 (es) * | 2010-04-22 | 2011-10-27 | Bermudez Benito Veronica | Material semiconductor para utilizar como capa activa/absorbedor de dispositivos fotovoltaicos, metodo para formar dicha capa activa, asi como celula fotovoltaica que incorpora dicha capa |
US9069130B2 (en) | 2010-05-03 | 2015-06-30 | The General Hospital Corporation | Apparatus, method and system for generating optical radiation from biological gain media |
EP2575598A2 (de) | 2010-05-25 | 2013-04-10 | The General Hospital Corporation | Vorrichtungen, systeme, verfahren und computerlesbares medium zur spektralanalyse von bildern aus einer optischen kohärenz-tomographie |
US9557154B2 (en) | 2010-05-25 | 2017-01-31 | The General Hospital Corporation | Systems, devices, methods, apparatus and computer-accessible media for providing optical imaging of structures and compositions |
US10285568B2 (en) | 2010-06-03 | 2019-05-14 | The General Hospital Corporation | Apparatus and method for devices for imaging structures in or at one or more luminal organs |
WO2012058381A2 (en) | 2010-10-27 | 2012-05-03 | The General Hospital Corporation | Apparatus, systems and methods for measuring blood pressure within at least one vessel |
JP2014523536A (ja) | 2011-07-19 | 2014-09-11 | ザ ジェネラル ホスピタル コーポレイション | 光コヒーレンストモグラフィーにおいて偏波モード分散補償を提供するためのシステム、方法、装置およびコンピュータアクセス可能な媒体 |
WO2013066631A1 (en) | 2011-10-18 | 2013-05-10 | The General Hospital Corporation | Apparatus and methods for producing and/or providing recirculating optical delay(s) |
WO2013148306A1 (en) | 2012-03-30 | 2013-10-03 | The General Hospital Corporation | Imaging system, method and distal attachment for multidirectional field of view endoscopy |
EP2852315A4 (de) | 2012-05-21 | 2016-06-08 | Gen Hospital Corp | Einrichtung, vorrichtung und verfahren für kapselmikroskopie |
EP2888616A4 (de) | 2012-08-22 | 2016-04-27 | Gen Hospital Corp | System, verfahren, und über computer zugängliches medium zur herstellung eines miniaturendoskops mit weicher lithografie |
WO2014117130A1 (en) | 2013-01-28 | 2014-07-31 | The General Hospital Corporation | Apparatus and method for providing diffuse spectroscopy co-registered with optical frequency domain imaging |
US10893806B2 (en) | 2013-01-29 | 2021-01-19 | The General Hospital Corporation | Apparatus, systems and methods for providing information regarding the aortic valve |
US11179028B2 (en) | 2013-02-01 | 2021-11-23 | The General Hospital Corporation | Objective lens arrangement for confocal endomicroscopy |
JP6378311B2 (ja) | 2013-03-15 | 2018-08-22 | ザ ジェネラル ホスピタル コーポレイション | 物体を特徴付ける方法とシステム |
WO2014186353A1 (en) | 2013-05-13 | 2014-11-20 | The General Hospital Corporation | Detecting self-interefering fluorescence phase and amplitude |
WO2015009932A1 (en) | 2013-07-19 | 2015-01-22 | The General Hospital Corporation | Imaging apparatus and method which utilizes multidirectional field of view endoscopy |
EP3021735A4 (de) | 2013-07-19 | 2017-04-19 | The General Hospital Corporation | Bestimmung der augenbewegung mittels netzhautabbildung mit rückkopplung |
EP3025173B1 (de) | 2013-07-26 | 2021-07-07 | The General Hospital Corporation | Vorrichtung mit optische dispersion nutzender laseranordnung zur anwendung in der fourier-raum optischen kohärenztomographie |
US9733460B2 (en) | 2014-01-08 | 2017-08-15 | The General Hospital Corporation | Method and apparatus for microscopic imaging |
WO2015116986A2 (en) | 2014-01-31 | 2015-08-06 | The General Hospital Corporation | System and method for facilitating manual and/or automatic volumetric imaging with real-time tension or force feedback using a tethered imaging device |
WO2015153982A1 (en) | 2014-04-04 | 2015-10-08 | The General Hospital Corporation | Apparatus and method for controlling propagation and/or transmission of electromagnetic radiation in flexible waveguide(s) |
ES2907287T3 (es) | 2014-07-25 | 2022-04-22 | Massachusetts Gen Hospital | Aparato para imagenología y diagnóstico in vivo |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4950615A (en) * | 1989-02-06 | 1990-08-21 | International Solar Electric Technology, Inc. | Method and making group IIB metal - telluride films and solar cells |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1154773A (ja) * | 1997-08-01 | 1999-02-26 | Canon Inc | 光起電力素子及びその製造方法 |
-
2005
- 2005-03-09 DE DE102005010790A patent/DE102005010790A1/de not_active Withdrawn
-
2006
- 2006-03-07 JP JP2008500185A patent/JP2008533712A/ja not_active Withdrawn
- 2006-03-07 EP EP06708672A patent/EP1859487A2/de not_active Withdrawn
- 2006-03-07 CA CA002599412A patent/CA2599412A1/en not_active Abandoned
- 2006-03-07 US US11/817,167 patent/US20080163928A1/en not_active Abandoned
- 2006-03-07 WO PCT/EP2006/060522 patent/WO2006094980A2/de not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4950615A (en) * | 1989-02-06 | 1990-08-21 | International Solar Electric Technology, Inc. | Method and making group IIB metal - telluride films and solar cells |
Non-Patent Citations (4)
Title |
---|
ANUP MONDAL ET AL: "ELECTROCHEMICAL DEPOSITION OF THIN ZNTE FILMS AS A CONTACT FOR CDTE SOLAR CELLS" SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, Bd. 26, Nr. 3, 1. April 1992 (1992-04-01), Seiten 181-187, XP000274200 ISSN: 0927-0248 * |
BHUNIA S ET AL: "Microwave synthesis, single crystal growth and characterization of ZnTe" JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, Bd. 186, Nr. 4, 7. März 1998 (1998-03-07), Seiten 535-542, XP004121517 ISSN: 0022-0248 * |
GESSERT T A ET AL: "Spectroscopic cathodoluminescence studies of the ZnTe:Cu contact process for CdS/CdTe solar cells" CONFERENCE RECORD OF THE 29TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, Bd. CONF. 29, 19. Mai 2002 (2002-05-19), Seiten 535-538, XP010666362 ISBN: 0-7803-7471-1 * |
V. VALDNA ET AL.: "Photoluminescence of Zn(SeTe) Annealed Phosphors" PHYSICA SCRIPTA, Bd. T69, 1997, Seiten 312-314, XP009071108 * |
Also Published As
Publication number | Publication date |
---|---|
JP2008533712A (ja) | 2008-08-21 |
WO2006094980A3 (de) | 2006-12-07 |
DE102005010790A1 (de) | 2006-09-14 |
EP1859487A2 (de) | 2007-11-28 |
CA2599412A1 (en) | 2006-09-14 |
US20080163928A1 (en) | 2008-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1859487A2 (de) | Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial | |
DE2639841C3 (de) | Solarzelle und Verfahren zu ihrer Herstellung | |
WO2007077114A1 (de) | Photovoltaisch aktives halbleitermaterial und photovoltaische zelle | |
DE202008009492U1 (de) | Halbleitermaterial und dessen Verwendung als Absorptionsmaterial für Solarzellen | |
DE102011054716A1 (de) | Gemischtes Sputtertarget aus Cadmiumsulfid und Cadmiumtellurid und Verfahren zu ihrer Verwendung | |
WO2007039562A2 (de) | Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial | |
DE3308598A1 (de) | Rueckreflektorsystem fuer sperrschicht-fotoelemente | |
DE102012218265B4 (de) | Rückseitenfeld-Strukturen für Mehrfachübergang-III-V-Photovoltaikeinheiten und Verfahren zum Herstellen einer Mehrfachübergang-III-V-Photovoltaikeinheit | |
Dirin et al. | Intrinsic formamidinium tin iodide nanocrystals by suppressing the Sn (IV) impurities | |
EP1807872B1 (de) | Photovoltaische zelle mit einem photovoltaisch aktiven halbleitermaterial | |
EP2887405A1 (de) | Schichtsystem für Dünnschichtsolarzellen | |
WO2013189968A1 (de) | SCHICHTSYSTEM FÜR DÜNNSCHICHTSOLARZELLEN MIT NaxInlSyClz-PUFFERSCHICHT | |
EP2865001A1 (de) | Schichtsystem für dünnschichtsolarzellen | |
DE3049226A1 (de) | "solarzelle" | |
WO2005114756A2 (de) | Antimonide mit neuen eigenschaftskombinationen | |
EP2865012A1 (de) | Schichtsystem für dünnschichtsolarzellen | |
Hien et al. | Investigation of the stability of organic-inorganic halide perovskite thin films: Insight from experimental and simulation | |
DE102010004359B4 (de) | Optoelektronisches Funktionsmaterial, seine Herstellung und Verwendung | |
DE102004052014A1 (de) | Photovoltaische Zelle | |
EP0173641A2 (de) | Halbleiterschicht auf einem Übergangsmetalldichalcogenid, Verfahren zu deren Herstellung und Verwendung derartiger Halbleiterschichten für Solarzellen | |
DE3526908A1 (de) | Halbleiterschicht aus einem uebergangsmetalldichalcogenid, verfahren zu deren herstellung und verwendung derartiger halbleiterschichten fuer solarzellen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 11817167 Country of ref document: US Ref document number: 2599412 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008500185 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006708672 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: RU |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: RU |
|
WWP | Wipo information: published in national office |
Ref document number: 2006708672 Country of ref document: EP |