WO2006069855A1 - Ensemble comprenant un composant electrique et un dispositif de refroidissement a deux phases - Google Patents

Ensemble comprenant un composant electrique et un dispositif de refroidissement a deux phases Download PDF

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Publication number
WO2006069855A1
WO2006069855A1 PCT/EP2005/056107 EP2005056107W WO2006069855A1 WO 2006069855 A1 WO2006069855 A1 WO 2006069855A1 EP 2005056107 W EP2005056107 W EP 2005056107W WO 2006069855 A1 WO2006069855 A1 WO 2006069855A1
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WIPO (PCT)
Prior art keywords
component
cooling device
arrangement according
evaporator
electrical
Prior art date
Application number
PCT/EP2005/056107
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German (de)
English (en)
Inventor
Eric Baudelot
Richard Kenney
Lyndon Shenton
Original Assignee
Siemens Aktiengesellschaft
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Publication of WO2006069855A1 publication Critical patent/WO2006069855A1/fr

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Definitions

  • the invention relates to an arrangement of at least one electrical component and at least one cooling device for dissipating heat that arises during operation of the component.
  • Such an arrangement is, for example, a power semiconductor module known from WO 03/030247 A2.
  • the electrical component of the power semiconductor module is a power semiconductor component which is arranged on a substrate (circuit carrier).
  • the substrate is, for example, a DCB (Direct Copper Bonding) substrate, which consists of a carrier layer of a ceramic material, on both sides of which electrically conductive layers of copper (copper foils) are applied.
  • the ceramic material is, for example, aluminum oxide (Al 2 O 3 ).
  • Power semiconductor device is soldered on one of the electrically conductive layers of copper.
  • Thermal conductivity coefficient ⁇ of aluminum oxide is about 30 Wm ⁇ -K "1. Therefore, the carrier layer of the substrate or the entire substrate functions as a cooling device for dissipating the amount of heat generated during operation of the power semiconductor device. During operation of the power semiconductor component, such a strong evolution of heat may occur that the cooling effect of the substrate is insufficient. As a result, the power semiconductor device or the device of the power semiconductor device on the substrate may be damaged.
  • the two-phase cooling device consists essentially of an evaporator (evaporator) for evaporating a cooling fluid, a condenser (condenser) for liquefying the cooling fluid and a fluid channel for transporting the cooling fluid as both liquid and gaseous phase.
  • evaporator evaporator
  • condenser condenser
  • the two-phase cooling device allows using the evaporation and condensation heat of the cooling fluid (coolant) a high heat flux density.
  • the high heat flow density results as follows:
  • the evaporator is thermally conductively connected to the electrical component.
  • the heat generated during operation of the electrical component is transferred to the evaporator.
  • the transferred heat leads to the evaporation of the liquid cooling fluid.
  • the cooling fluid passes from the liquid phase to the gaseous phase.
  • the cooling fluid absorbs heat of vaporization.
  • the condenser is thermally conductively connected to a heat sink. In the condenser, condensation of the gaseous cooling fluid occurs.
  • the cooling fluid passes from the gaseous phase into the liquid phase.
  • both the evaporator and the condenser have a highly thermally conductive metal, such as aluminum or
  • the object of the present invention is to show how an electrical component can be cooled efficiently.
  • an arrangement of at least one electrical component and at least one cooling device for dissipating heat is specified, which arises during operation of the component.
  • the arrangement is characterized in that the cooling device has at least one two-phase cooling device with at least one evaporator of a cooling fluid and between the component and the evaporator of the two-phase cooling device, an electrical insulation film is arranged.
  • the insulating film may be directly or indirectly connected to the device and the evaporator.
  • the insulating film is glued directly onto the component or to an electrical connection line for electrical contacting of the component.
  • the insulating film is laminated to the device or to the electrical connection line for making electrical contact with the device.
  • the lamination preferably takes place without adhesive.
  • the insulation film is not glued on.
  • the insulation film is laminated onto the component in such a way that a surface contour of the component is imaged in a surface contour of the insulation film which faces away from the component.
  • a topography of the component is molded.
  • the lamination is preferably carried out under application of a vacuum, wherein a particularly intimate and firm contact between the component and the insulating film or the electrical connection line and the insulating film is formed. Due to the intimate and firm contact a particularly good thermal connection and at the same time a robust construction are achieved.
  • the insulating film preferably has an electrical insulation material selected from the group consisting of liquid-crystalline polymer, organically modified ceramic, polyacrylate, polyimide, polyisocyanate, polyethylene, polyphenol, polyether ether ketone, polytetrafluoroethylene and / or epoxide.
  • a necessary film thickness (film thickness) of the insulating film used depends on various factors, for example on the insulating material of the insulating film, on a heat flow to be achieved by the insulating film or also on the conditions under which the arrangement is operated.
  • These specified insulation materials are usually characterized by relatively low thermal conductivity coefficients.
  • a relatively thin insulating film is used.
  • the film thickness of the insulation film is so high that still sufficient electrical insulation is ensured.
  • the film thickness is selected, for example, from the range of 10 microns to 50 microns.
  • the insulating film has, in a special embodiment, thermally conductive material.
  • the insulation film consists of a composite material with the electrical insulation material as the base material and with the thermally conductive material as a filler.
  • the thermally conductive material is preferably electrically insulating. Particularly suitable are ceramic materials such as aluminum oxide or aluminum nitride. These materials are added to the base material of the insulating film as a powder.
  • the evaporator and the electrical component are thermally conductively connected to one another via the insulating film.
  • the evaporator of the two-phase cooling device is glued to the electrical insulation film in a particular embodiment.
  • Insulation foil are connected to each other via an adhesive layer connected.
  • the adhesive preferably has thermally conductive particles.
  • the evaporator of the two-phase cooling device and the electrical insulation film are connected to one another via a pressure contact.
  • the evaporator and the insulation film are pressed against each other. This is achieved, for example, with a pretensioning device. For a good thermal connection is also ensured here for the largest possible connection area.
  • the cooling device is suitable for cooling a single component. Due to the efficient heat transport, the cooling device is particularly suitable for the simultaneous cooling of a plurality of electrical components, which are arranged in a relatively small space to each other. Therefore, in a particular embodiment, the arrangement has a carrier body with a number of electrical components.
  • the carrier body is for example a substrate. On the substrate several components to be cooled can be arranged relatively close to each other. This results in an increased compared to the prior art integration density (number of electrical components per unit area or volume of the carrier body).
  • electrical connection lines between the components can be made very short, with the result that lower electrical losses occur in the connecting lines.
  • At least one heat spreader is arranged between the electrical insulation film and the component in order to reduce a lateral (flat, ie not in the thickness direction of the insulation film) thermal gradient in the insulation film caused by the operation of the component.
  • a lateral (flat, ie not in the thickness direction of the insulation film) thermal gradient in the insulation film caused by the operation of the component As a result, temperature peaks are avoided during operation of the device, which could lead to damage to the insulation film or the entire assembly.
  • Heat spreaders can be additionally increased integration density.
  • the two-phase cooling device on at least two evaporators, which are connected to a condenser of the cooling fluid via at least one fluid channel for transporting the cooling fluid.
  • a plurality of fluid channels are present.
  • the two-phase cooling device is preferably selected from the group thermosiphon and / or heat pipe and / or heat planar.
  • "Heatplanar" is a surface design of the "Heatpipe”.
  • the electrical component may be any active or passive electrical component in which it must be dissipated during operation to such a heat development that heat.
  • the component is a semiconductor component.
  • the semiconductor component is, for example, an SMD (Surface Mounted Device) component applied to a circuit carrier.
  • the semiconductor component is a power semiconductor component.
  • Power semiconductor component is preferably selected from the group diode, MOSFET, IGBT, thyristor and / or bipolar transistor.
  • Power semiconductor device or a whole power semiconductor module.
  • the cooling is so efficient that a compact, space-saving construction results. On a relatively large, voluminous heat sink can be omitted.
  • FIG. 1 shows an arrangement in a lateral cross-section.
  • Figure 2 shows a section of the Anorndung in a lateral cross-section.
  • the exemplary embodiments relate in each case to an arrangement 1 of at least one electrical component 2 and at least one cooling device for dissipating heat which arises during operation of the component 2.
  • the cooling device is a two-phase cooling device 3 with an evaporator 31 for a Cooling fluid 34 and a condenser 32 for condensing the cooling fluid 34.
  • the evaporator 31 and the condenser 32 have thermally highly conductive aluminum.
  • an electrical insulation film 4 is arranged between the electrical component 2 and the evaporator 31 of the two-phase cooling device.
  • the insulating film 4 is configured and applied in such a way that the electrical component 2 and the evaporator 31 are electrically insulated from one another and at the same time an efficient heat conduction path from the component 2 to the evaporator 31 is present.
  • the insulating film 4 on thermally conductive particles. These particles have alumina.
  • the evaporator 31 is connected via a fluid passage 33 with the
  • the two-phase cooling device is designed as a "heat pipe.”
  • the two-phase cooling device is a thermosyphon ,
  • the condenser 32 is in thermal contact with a heat sink 35.
  • the heat sink 35 has a copper block with cooling fins.
  • the heat sink has a heat sink fluid which is conducted past the copper block to absorb heat.
  • the heat sink fluid is air which is guided past the cooling fins of the heat sink 35 by means of a fan (not shown).
  • the heat sink fluid is a liquid.
  • the liquid is water, which has a high heat capacity and is therefore particularly suitable for absorbing heat.
  • the water is passed by means of a pump, not shown, on the heat sink.
  • the electrical component 2 is a
  • Power semiconductor device 21 in the form of a MOSFET.
  • the power semiconductor device 21 is an IGBT.
  • the power semiconductor component 21 is part of a power semiconductor module 26.
  • a plurality of power semiconductor components 21 are applied to a substrate 5.
  • the substrate 5 is a DCB substrate.
  • the DCB substrate has a carrier layer 51 of aluminum oxide and electric power layers 52 and 53 of copper applied to both sides (FIG. 2).
  • an electrical component 2 in the form of a
  • Power semiconductor device 21 soldered.
  • the solder layer 24 results.
  • the power semiconductor component 21 is soldered such that a contact surface 22 of the lead semiconductor component 21 pointing away from the DCB substrate 5 results.
  • a further insulating film 6 is laminated under vacuum. The others
  • Insulation film 6 is laminated onto the DCB substrate and the power semiconductor components 21 in such a way that a surface contour 23 of the power semiconductor component 21 and a surface contour 54 of the DCB substrate 5 are imaged in a surface contour 61 of the further insulation film 6 that corresponds to the DCB substrate 5 and the power semiconductor component 21 is turned away.
  • the topography, which results from the power semiconductor component 21 and the substrate 5, is formed by the further insulation film 6.
  • Power semiconductor device 21 electrically contacted.
  • the window 62 is generated in the further insulating film 6 by laser ablation.
  • the planar electrical contacting of the contact surface 22 of the power semiconductor device 21 is generated by a multi-layer deposition 25 of electrically conductive materials.
  • the power semiconductor module 26 is soldered onto the copper block of the heat sink 35 via the further electrical conduction layer 53. There is another layer of solder 56. Via the solder layer 24, the electrical conduction layer 52, the aluminum oxide layer 51, the further conduction layer 53 and the further solder layer 56, there is thus a further heat conduction path from the power semiconductor component 21 to the heat sink 35.
  • the insulation film 4 which is between the
  • Power semiconductor device 21 and the evaporator 31 is laminated (see, further insulating film 6).
  • the insulating film 4 is laminated to the deposit 25, which is the connecting line for making electrical contact with the contact surface 22 of the
  • Power semiconductor device 21 forms.
  • the surface contour of the deposition is imaged in a surface contour of the insulating film. It is the topography of the deposition 25 and the connecting line molded.
  • the deposition 25, which serves primarily for electrical contacting is a component of the heat conduction path from the power semiconductor component 21 to the evaporator 31.
  • the insulation film 4 ensures that no short circuit occurs between the evaporator 31 and the deposition 25.
  • the insulation film 4 is laminated directly onto the power semiconductor component 21 in such a way that the surface contour of the power semiconductor component 21 is imaged in the surface contour of the insulation film 4, which has turned away from the power semiconductor component 21.
  • the topography of the power semiconductor device 21 is formed by the insulating film 4.
  • the evaporator 31 and the power semiconductor component 21 are connected to one another in a thermally conductive manner.
  • the evaporator 31 is adhesively bonded to the insulating film 4 on the upper side of the power semiconductor module 26 with the aid of a thermally conductive adhesive.
  • the evaporator 31 and the insulating film 4 by a pressure contact with each other.
  • the evaporator 31 and the insulating film 4 are not glued together, but are pressed against each other.
  • FIG. 1 For exemplary embodiments, a plurality of evaporators 31, a plurality of condensers 32 and / or a plurality of heat sinks 35 are used.
  • heat spreaders (not shown) are used. The heat spreaders ensure the lowest possible lateral heat or temperature gradient in the insulation film 4. This avoids temperature peaks that could lead to damage to the insulation film 4 or the entire arrangement. Through the use of heat spreaders, the integration density is additionally increased compared to the prior art.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un dispositif (1) comprenant au moins un composant (2) électrique et au moins un dispositif de refroidissement permettant de dissiper la chaleur apparaissant de le composant. Le dispositif est caractérisé en ce que le dispositif de refroidissement comprend au moins un dispositif de refroidissement (3) à deux phases présentant au moins un évaporateur (31) et un liquide de refroidissement (34) et un feuille d'isolation (4) est placée entre le composant et l'évaporateur du dispositif de refroidissement à deux phases. Le dispositif de refroidissement à deux phases est formé comme un thermosiphon, un tuyau de chaleur, ou un chauffage plan. Selon l'invention, un refroidissement efficace des éléments électriques, en particulier des composants à semi-conducteurs (21) d'un module à semi-conducteurs (26) est également possible lors d'une isolation électrique agissant simultanément sur l'évaporateur du dispositif de refroidissement à deux phases et sur le composant. Une densité d'intégration élevée est également possible.
PCT/EP2005/056107 2004-12-28 2005-11-21 Ensemble comprenant un composant electrique et un dispositif de refroidissement a deux phases WO2006069855A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004063039A DE102004063039B4 (de) 2004-12-28 2004-12-28 Anordnung mit einem elektrischen Leistungshalbleiterbauelement und einer Zwei-Phasen-Kühlvorrichtung
DE102004063039.9 2004-12-28

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WO2006069855A1 true WO2006069855A1 (fr) 2006-07-06

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Cited By (3)

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WO2010112478A3 (fr) * 2009-04-01 2011-08-11 Siemens Aktiengesellschaft Support de pression pour circuit électronique
CN103814282A (zh) * 2011-08-24 2014-05-21 高通Mems科技公司 硅化物间隙薄膜晶体管
WO2015018721A1 (fr) * 2013-08-07 2015-02-12 Siemens Aktiengesellschaft Circuit électronique de puissance présentant un contact électrique planaire

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DE102021106008B3 (de) 2021-03-12 2022-03-24 Bayerische Motoren Werke Aktiengesellschaft Leistungselektronikmodul für einen Stromrichter mit zwei Wärmeleitpfaden, Stromrichter sowie Kraftfahrzeug

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WO2015018721A1 (fr) * 2013-08-07 2015-02-12 Siemens Aktiengesellschaft Circuit électronique de puissance présentant un contact électrique planaire

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DE102004063039B4 (de) 2011-09-22

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