EP1057249A1 - Inverseur de matrice - Google Patents

Inverseur de matrice

Info

Publication number
EP1057249A1
EP1057249A1 EP99964452A EP99964452A EP1057249A1 EP 1057249 A1 EP1057249 A1 EP 1057249A1 EP 99964452 A EP99964452 A EP 99964452A EP 99964452 A EP99964452 A EP 99964452A EP 1057249 A1 EP1057249 A1 EP 1057249A1
Authority
EP
European Patent Office
Prior art keywords
power semiconductor
emitter
power supply
contacts
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99964452A
Other languages
German (de)
English (en)
Inventor
Herbert Schwarzbauer
Walter Springmann
Eckhard Wolfgang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1057249A1 publication Critical patent/EP1057249A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
    • H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
    • H02M5/22—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M5/275—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/297—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal for conversion of frequency
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to an arrangement of power semiconductor components in a suitable mounting device as a matrix converter.
  • EP 0 833 431 A2 describes a three-phase matrix converter in which there are nine main switches combined in three switch groups and an auxiliary commutation device with an auxiliary switch designed as a four-segment switch between the switch groups.
  • IGBTs with a respective inverse diode, two lockable, parallel-connected GTO thyristors or two series-connected parallel circuits of an asymmetrical GTO with an inverse diode are specified as switches. With this device it is possible to convert AC voltages of a given amplitude and frequency into AC voltages of any amplitude and frequency.
  • Such matrix converters will be of great importance in the future, since they open up the possibility of feeding the energy that the motor supplies back into the power grid when a motor controlled by it is operated in generator mode.
  • Previous arrangements of circuit breakers that are suitable for such matrix converters are so complex that compact integration is not possible.
  • IGBTs In contrast to the components described there, conventional IGBTs have three connections: collector, emitter and gate. In IGBT modules, the most commonly used design, the collector is soldered onto a ceramic substrate and the emitter and gate are contacted via bond connections. There are also IGBTs and power diodes in disc cells. The emitter and collector are connected via a pressure contact; the gate connection can be made via a spring contact. Bidirectional components, which have connection contacts on two opposite main sides, require a different new construction technique. The housing or mounting devices for such components must be designed so that the various connections can be contacted electrically isolated from each other.
  • the object of the present invention is to provide a compactly producible matrix converter for high currents and voltages.
  • the matrix converter according to the invention is constructed from nine bidirectional power semiconductor switches, each of which has at least one connection contact for the current flow, referred to below as the emitter connection, on opposite main sides. Also located on everyone Main page a contact to control the switching function, hereinafter referred to as the gate contact.
  • a power semiconductor switch can, for. B. be a bidirectional IGBT, in which an IGBT structure with a channel controlled by a gate electrode is present on each of the two opposite main sides. By applying suitable potentials to the gate contacts of the gate electrodes, the bidirectional IGBT can be switched on or off in both current directions.
  • the potential present at the emitter connections is tapped and fed to the control circuit provided for the switching of the component. This is necessary because high fluctuations in the AC voltages to be commutated may occur on the power lines to be switched.
  • three current conductors aligned next to one another run in the longitudinal direction above the component matrix and three current conductors aligned next to one another run in the transverse direction below the component matrix.
  • the power semiconductor components are adjacent to a current conductor, preferably above or arranged below, and can each be a single chip.
  • one of the three power lines running in the longitudinal direction is connected to one of the three power lines running in the transverse direction.
  • three inputs can therefore optionally be connected to three outputs.
  • the three power lines acting as inputs or outputs are preferably formed by metallic bus bars. Raised contacts of the power semiconductor components can be permanently electrically conductively attached to these busbars by soldering, gluing or a pressing device.
  • the various lines to the gate and auxiliary emitter connections are designed as conductor tracks on or in a thin insulating circuit board or film.
  • the corresponding contacts of the power semiconductor components are attached to the contact surfaces provided for this purpose.
  • the power semiconductor components can also be additionally fastened to other surface portions of the printed circuit board or film, so that the matrix-like arrangement of the nine power semiconductor components can already be largely fixed as a result.
  • Such a printed circuit board or film can be present on both sides of the arrangement of the power semiconductor components or only on one of the two respective main sides.
  • the upper connections can then be formed by leads in a printed circuit board or film which is attached to the top of the matrix-like arrangement.
  • the upper and transverse to the lower busbars are preferably attached to an upper part which presses on the chips with the power semiconductor components from above.
  • a conductor carrying photos can lie between the lower busbars applied to a substrate and the matrix-like arrangement.
  • the connections of the power semiconductor components in a manner known per se, for. B. be connected by means of bond wires with suitably arranged conductor tracks, the z. B. are attached to an upper part which carries the upper busbars.
  • Figure 1 shows a lower part of a matrix converter.
  • Figure 2 shows an upper part of a matrix converter.
  • FIG. 3 shows the design of a printed circuit board or foil provided with conductor tracks.
  • Figure 4 shows a bidirectional semiconductor switch in cross section.
  • FIG. 5 shows a cross section through a matrix-like arrangement of chips in a frame.
  • FIG. 6 shows a diagram of the matrix-like arrangement of the chips in a frame.
  • FIG. 7 shows cross-sectional configurations of alternative connection options for the power semiconductor components.
  • FIG. 1 An example of a lower part 1 of the matrix converter is shown schematically in FIG.
  • a base plate 2 which preferably consists of a material that has a similar coefficient of thermal expansion as the material of the actual substrate 3.
  • the base plate can be, for example, an MMC (metal matrix composite) material, for example AlSiC, CuC or CuSiC.
  • the substrate 3, which carries the power supplies from the network, is preferably A1N.
  • the power supplies are in the example of Figure 1 by metallic bus bars 4, z. B. made of copper.
  • the three required busbars are preferably aligned parallel to one another as shown.
  • For the purpose of Contacting of the gate connections and the auxiliary emitter connections are provided for the chips 5 in the busbars for the chips arranged at the points framed by dashed lines, but these can also be omitted.
  • the emitter connections of the chips provided for the current flow through the closed switches can be attached directly to the busbars.
  • the illustration in FIG. 1 shows the essential components regardless of the special dimensioning in the respective application.
  • the busbars can be narrower, the spaces between them can be wider, so that the chips acting as switches can also be arranged to the side of the busbars.
  • the emitter connections are then contacted, for. B. via connecting wires or conductor tracks, which may be present on the substrate, on a separate circuit board or on a foil provided with conductor tracks.
  • the embodiment shown in Figure 1 has the advantage of simple assembly.
  • a particular advantage of the arrangement of the chips in a 3x3 matrix is that the function of the matrix converter is already realized with the alignment of the upper busbars transversely to the alignment of the lower busbars.
  • FIG. 2 shows a suitable upper part 6 of the matrix converter, which is constructed analogously to the lower part according to FIG. 1.
  • This upper part is placed from above onto the chips arranged on the lower part, in such a way that, in accordance with the orientation shown in FIG. 2, the current leads on the upper part run transversely to the direction of the current leads on the lower part.
  • three metallic busbars 40 are also present as power supply lines.
  • the preferred arrangement of the chips is also marked in FIG. 2 by the outlines drawn in broken lines.
  • the busbars are also on the upper part recesses 50 for the gate and auxiliary emitter connections.
  • the gate contacts are both in the middle of the chip both on the upper edge and on the underside of the chips. Instead, the gate connections can be on the edge or on a corner of the chip. Since the auxiliary emitter connections only serve to transmit the electrical potential applied to the emitter contacts as a reference potential to the control circuit, the auxiliary emitter connections can also be attached, for example, next to the chips on the edges of the busbars.
  • FIG. 3 shows a preferably flexible printed circuit board 7 with conductor tracks 8.
  • the printed circuit board can be a foil made of dielectric material; Polyimide (e.g. Kapton ® ) is particularly suitable for this. Such a film can be produced in a suitable thickness with a sufficient insulating effect.
  • the conductor tracks in this film are provided for connecting the gate or auxiliary emitter of each chip to the control electronics. Therefore, narrow and thin conductor tracks on the film are sufficient.
  • a multilayer structure consisting of at least two layers of the material of the film enables good insulation on both sides of the conductor tracks. There may also be several layers of the film one above the other, between each of which a part of the conductor tracks is arranged.
  • the structured printed circuit board 7 shown in FIG. 3 has openings 71, into which laterally projecting portions 70, here in the form of tongues or tabs, protrude. These tongues fit into the cutouts 5 of the busbars 4 shown in FIG. 1.
  • the square areas shown on the portions 70 in FIG. 3 represent the connections 9 for a gate and the connections 10 for an auxiliary emitter, which are connected to the gate contact on the underside of the respective chip and be contacted with a small area of the emitter contact on the underside of the chip. Since in the case of the auxiliary emitter connections it is only important to tap the potential as close as possible to the respective emitter contacts, the connections 10 for the auxiliary emitters can also be attached directly to suitable contact surfaces of the power supply lines.
  • the terminals 10 of the auxiliary emitters can therefore also be attached to the side of the printed circuit board 7 opposite the gate terminals 9 if suitable contact surfaces are present in the associated cutouts in the busbars.
  • the embodiment shown with auxiliary emitter connections on the emitter contacts of the chips has the advantage of being easy to manufacture, since the gate connections and the auxiliary emitter connections can be produced in the same method step.
  • the dashed lines are those in the structured printed circuit board, for. B. between two layers of a film, extending conductor tracks 8, which are guided from their ends shown below to the control electronics, which is not shown.
  • the conductor tracks can be led out of the circuit board at one edge; the control electronics can also be integrated in or on the circuit board.
  • the circuit board 7 can be formed over the entire surface.
  • corresponding openings 71 or cutouts are provided in the areas of the power supply lines provided for the contacting.
  • At least part of the dik ke of the circuit board can, however, be compensated for by a solder layer or electrically conductive adhesive layer between the emitter contacts and the top of the power supply lines. If the entire arrangement is assembled by pressing the lower part 1 and upper part 6 together (pressure contacts), it may be necessary to cut the power supply lines sufficiently deep in the area of the circuit board resting on them or by means of suitably raised contact surfaces on the power supply lines in the area of the contacts to be contacted Emitter contacts of the chips completely compensate for the thickness of the circuit board.
  • a similar structured printed circuit board or foil according to FIG. 3 and provided with conductor tracks inside and / or on the upper side can be present for the gate and auxiliary emitter connections of the chips on the upper side.
  • This structured circuit board or film then fits z. B. in corresponding recesses 50 of the busbars 40 of the upper part 6 ( Figure 2).
  • the chips with the emitter connections are mounted directly on the lower busbars, but that the upper power supply lines are arranged laterally next to the chips.
  • the emitter connections of the chips can in this case, for. B. be electrically conductively connected by means of bonding wires provided with connection pads of the upper power supply lines.
  • the chips and the top power supply gene can then be arranged approximately in one plane. The attachment of the gate connections and auxiliary emitter connections on the upper side of the chips can then be achieved relatively easily by means of a full-surface printed circuit board or printed circuit foil.
  • the particularly simple and compact embodiment with emitter connections which are soldered, glued or pressed directly onto the busbars, can preferably be realized with an embodiment of the chips with a bidirectional semiconductor switch, as shown in cross section as an example in FIG.
  • the emitter contacts can be present several times and distributed on the relevant main side of the chip; the gate contacts can be placed anywhere on the main page in question and do not have to be in the middle of the main page.
  • the z. B. is aluminum, is preferably reinforced, for example by a thick layer of nickel, which is typically about 30 microns thick. This reinforcement of the contacts made of nickel can be deposited on the metalization without current, which is particularly expedient during production.
  • the surface of the nickel layer can also e.g. B. be planarized by grinding.
  • the dielectric edge terminations of the chips have a passivation 16 on the upper side, which is preferably polyimide.
  • the contacts 13, 14 protrude significantly beyond this polyimide layer and thus enable a simple electrical connection to the power supply lines or the gate Connections and the auxiliary emitter connections. In the example in FIG. 4, a scratching frame is drawn in at the edge of the chip, which makes it easier to separate the chips during manufacture.
  • the circuit board 7 covers the edges of the chips outside the areas of the emitter contacts 14 which are electrically connected to the current leads.
  • the circuit board is preferably glued to the edges of the chips, in particular with a passivation 16 made of polyimide, in order to ensure better electrical insulation of the chips from the power supply lines.
  • FIG. 4 portions of a respective printed circuit board 7 are drawn above and below the passivations 16 above and below the chip.
  • the emitter contacts are attached to the current leads 4, 40 with conductive adhesive layers 11.
  • the tongue-shaped portions 70 of the printed circuit boards 7 are arranged in the cutouts 5, 50 of the power supply lines.
  • the gate connections are shown here. It can also be seen that the upper power supply 40 runs perpendicular to the plane of the drawing and the lower power supply 4 runs in the plane of the drawing.
  • the chips can also be fixed to one another in the matrix-like arrangement. That can e.g. B. be effected in that the side edges of the chips are glued in accordance with the cross section shown in Figure 5 in a recessed plate or frame 18. Thin adhesive layers 19, which fix the chips, are located between the side surfaces (edge surfaces) of the chips 12 and the inner sides of the cutouts of this frame.
  • FIG. 6 shows such a matrix-like arrangement of the chips 12 in a frame 18. The position of the cross section shown in FIG. 5 is shown in FIG. The small squares on the top of the chips represent the gate contacts 13 of the chips.
  • FIG. 7 shows further options for contacting the chips.
  • a chip 12 is shown here as an example, which is fastened in a frame 18 by means of adhesive layers 19 in accordance with the examples of FIGS. 5 and 6.
  • the emitter contacts 14 and the gate contacts 13 protrude above and below this frame.
  • the frame can be left out.
  • the upper conductor rail 40 for connecting the upper emitter contacts of the chip is shown in cross section in FIG. 7 and extends perpendicular to the plane of the drawing.
  • the busbar is not attached to the underside of an upper part, but is fastened in a holder 20 or a further frame by means of adhesive layers 21.
  • connection surfaces 23 on the top of the holder which are connected via bond wires 22 to a gate contact 13 on the top of a chip.
  • a suitable recess 24 is present in the busbar, which exposes the top of the gate contact.
  • a printed circuit board 7 is shown as a flexible conductor track film on the underside of the chip.
  • this conductor track foil there is a conductor track 8, which is provided for connecting the gate contact 13 on the underside of the chip.
  • the busbar is connected to at least one lower emitter contact 14 of the chip, for. B. by means of an electrically conductive adhesive layer 30 for permanent attachment of the chip on the
  • the conductor track foil is drawn in a greatly exaggerated thickness.
  • a very thin conductor foil e.g. B. made of polyimide
  • a very thin adhesive layer 30 is sufficient to attach the emitter contacts directly on the busbar.
  • this conductor track in cross section in FIG. 7 is already parallel to the orientation of the connection from the middle connection contact 9 attached to the gate contact of the chip Chip-guided lower busbar 4 shown.
  • the lower busbar 4 is aligned in the cross section shown in the horizontal of the plane of the drawing.
  • the conductor track is expediently first led out - here perpendicular to the plane of the drawing - into an area to the side of the conductor rail, bends there and then runs parallel to the conductor rail.
  • connection contact 9 of the conductor track 8 and the gate contact 13 of the chip there is a recess 25 in the busbar, the wall of which is preferably insulated with dielectric material 26 and in the interior of which a tip is pressed on with a spring 32 31 or the like is present, which presses against the circuit board.
  • the tip that is available for pressing the circuit board against the gate contact can also be on the side of the Conductor rail can be attached in a region of the substrate which is free from the current leads.
  • the top of the substrate need not be flat.
  • the substrate can fill the area between the busbars.
  • a tip In a region of the upper side of the substrate which is coplanar to the upper side of the busbars, such a tip can preferably be attached, which presses against the conductive foil or the flexible printed circuit board in order to NEN contact contact located therein with a gate contact of the chip arranged to the side of the power supply.
  • a corresponding device can also be present on the top of the chip.
  • the resilient tips are then z. B. attached in the upper part, which carries the upper busbars.
  • the matrix converter according to the invention has the advantage of being able to be accommodated in an extremely small space. If power semiconductor switches are used whose chips are typically 13 mm x 13 mm in size, the entire matrix converter has an area of no more than 5 cm x 5 cm. In principle, the chips can also be made smaller (e.g. 5 mm x 5 mm), which depends on the respective area of application and the current strengths to be processed.
  • the matrix converter according to the invention enables good dissipation of the heat loss by directly connecting the underside of the chip to the heat-conducting power supply lines. Furthermore, good insulation of the two main sides of the chips is achieved by using a flexible printed circuit board or insulating film in which the gate and auxiliary emitter lines are enclosed in an electrically insulated manner.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)

Abstract

Neuf composants de puissance bloquants bidirectionnels sont appliqués sur un substrat (3) sous la forme d'une matrice à trois rangées entre respectivement trois conducteurs électriques (4) placés parallèlement sous et/ou sur le substrat (3). Les conducteurs électriques appliqués sur la matrice sont perpendiculaires aux conducteurs électriques appliqués sous la matrice. Les conducteurs imprimés amenant aux connexions de porte et d'émetteur auxiliaire se trouvent sur ou dans une carte imprimée ou un film mince et isolant(e) et sont fixés aux contacts correspondants de la puce dans les évidements (5) des conducteurs électriques.
EP99964452A 1998-12-21 1999-12-21 Inverseur de matrice Withdrawn EP1057249A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19859127 1998-12-21
DE19859127 1998-12-21
PCT/DE1999/004057 WO2000038306A1 (fr) 1998-12-21 1999-12-21 Inverseur de matrice

Publications (1)

Publication Number Publication Date
EP1057249A1 true EP1057249A1 (fr) 2000-12-06

Family

ID=7892031

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99964452A Withdrawn EP1057249A1 (fr) 1998-12-21 1999-12-21 Inverseur de matrice

Country Status (5)

Country Link
US (1) US6559532B1 (fr)
EP (1) EP1057249A1 (fr)
JP (1) JP2002534050A (fr)
KR (1) KR100635681B1 (fr)
WO (1) WO2000038306A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI282204B (en) * 2003-08-12 2007-06-01 Hitachi Ltd Power conversion device using matrix converter
JP4140552B2 (ja) 2004-04-28 2008-08-27 トヨタ自動車株式会社 自動車用電源装置およびそれを備える自動車
JP4498827B2 (ja) 2004-06-03 2010-07-07 トヨタ自動車株式会社 電力変換装置およびそれを備えた車両
EP1973222A1 (fr) * 2007-03-20 2008-09-24 ALSTOM Technology Ltd Machine électrique avec un convertisseur matriciel
DE102015104956A1 (de) 2015-03-31 2016-10-06 Infineon Technologies Ag Gedruckte Leiterplatte mit einem Leiterrahmen mit eingefügten gehäusten Halbleiterchips
BR122022019305B1 (pt) 2016-03-11 2023-04-18 Itt Manufacturing Enterprises Llc Aparelho incluindo um conjunto de motor
US11451156B2 (en) 2020-01-21 2022-09-20 Itt Manufacturing Enterprises Llc Overvoltage clamp for a matrix converter
US11448225B2 (en) 2020-01-21 2022-09-20 Itt Manufacturing Enterprises Llc Motor assembly for driving a pump or rotary device having a cooling duct
US11394264B2 (en) 2020-01-21 2022-07-19 Itt Manufacturing Enterprises Llc Motor assembly for driving a pump or rotary device with a low inductance resistor for a matrix converter

Family Cites Families (7)

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US4253054A (en) * 1979-02-05 1981-02-24 General Electric Company Phase controlled rectifier circuit for rapidly charging batteries
JPH06202705A (ja) * 1993-01-06 1994-07-22 Matsushita Electric Ind Co Ltd ディジタル制御装置
JP3352840B2 (ja) 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
US5565705A (en) * 1994-05-02 1996-10-15 Motorola, Inc. Electronic module for removing heat from a semiconductor die
US5793064A (en) * 1996-09-24 1998-08-11 Allen Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor
DE19639773A1 (de) 1996-09-27 1998-04-02 Abb Patent Gmbh Dreiphasiger Matrix-Stromrichter und Verfahren zum Betrieb
DE19804192A1 (de) 1998-02-03 1999-08-12 Siemens Ag Verfahren zur Herstellung eines Leistungshalbleiterbauelementes

Non-Patent Citations (1)

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Title
See references of WO0038306A1 *

Also Published As

Publication number Publication date
WO2000038306A1 (fr) 2000-06-29
KR100635681B1 (ko) 2006-10-17
US6559532B1 (en) 2003-05-06
KR20010041162A (ko) 2001-05-15
JP2002534050A (ja) 2002-10-08

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