Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
  • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
  • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/20—Light-sensitive devices
  • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/20—Light-sensitive devices
  • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
  • H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/10—Integrated devices
  • H10F39/12—Image sensors
  • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
  • H10F39/182—Colour image sensors
  • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/542—Dye sensitized solar cells

Definitions

• 'colour detection' is normally synonymous with "visible electromagnetic radiation detection'
• this method can also be used to gain information on the spectral distribution of electromagnetic radiation outside the range of visible light (e.g. ultraviolet, infrared or x-ray) , using filter layers with the according transmission properties.
• the semiconductor can be patterned to provide many individual photo sensors on a single substrate, and the colour filter can be likewise pattered to the same (x-y) dimensions. If it is desired to sense more than one colour with the same photo sensor substrate, particularly to capture a colour image, conventionally the colour filter is patterned with a pixel (picture-point) array of different colour filters, which conventionally control the light transmitted through the filter to adjacent photo sensors. Using pixel elements with different color filters next to each other in a two- dimensional array makes it possible to provide color information for the image detected. Sensing devices applying color filters generally consist of sensor elements lying side-by-side on a sensor plain. Using the response of neighboring pixel elements
• BESTATIGUNGSKOPIE with different sensitivities (typically three to four) it is possible to measure light intensity as well as the spectral distribution of light at a given point.
• the size of one pixel for which full colour information is known is (by area) at least three times greater than the size of the corresponding photo sensor elements: or, to express this in a different way, the areal colour resolution of the colour image detector is at best a third of that which would be achievable for a black-and- white image using the same photosensitive detector array.
• a pixel or picture-point an area for which full colour information is directly measured or transmitted and therefore the number of pixels in an array or display is the number for which distinct full colour information is measured (and not interpreted) or transmitted.
• one pixel is an array of 3 to 4 monochrome sub-pixels as mentioned above.
• Said object has been achieved with a semiconductor image detector with the characteristic features according to claim 1.
• a new type of colour image sensor is described where different colours are sensed with the same (x-y) spatial coordinates. This is achieved by using a stack of sensors each of which is sensitive to one colour and transparent to others. This thus allows the creation of a device, composed of such sensing elements, to have high spatial resolution, and avoid certain sensing artifacts, compared with most other known state of the art devices.
• dye-sensitized wide-bandgap semiconductors allows a higher degree of control over the colour sensitivity of the devices than that obtained with other known vertical-stack devices based on doped conventional semiconductors, in particular allowing sensitivity to narrow bands of electromagnetic radiation, and to electromagnetic radiation beyond the human-visible range.
• the present invention allows the colour pixel to be the same size as the sensor pixel, resulting in at least a three-fold improvement in areal resolution for a device of equivalent photo sensor size (or a corresponding decrease in sensor array size for equivalent picture resolution, provided the photo sensor elements may be reduced so far in size; or any suitable compromise between the two, following the definition above) . It also, importantly, by removing the conventional patterned colour filters, removes many of the problems with manufacture of colour filters (e.g., achieving evenness, dimensional match to the sensor array, problems with patterning defect-free at this high resolution) . It also removes almost all the problems with Moire patterns.
• such a device to realize sensor arrays that are stacked perpendicular to the imaging plane may also for instance be made practically by using dye- sensitized wide bandgap semiconductor layers.
• semi- conductor layers sensitized with different dyes are employed, each of which will select light of one different non- significantly overlapping specific narrow range of wavelengths, and remain transparent to all others.
• the dyes are typically used in combination with a semiconductor, which will only react photosensitively to light when the semiconductor has been sensitized by the dyes. It is also possible to have a distribution of the dye absorption in the different layers according to Fig. 3 and achieve separated and therefore non-significantly overlapping wavelengths responses.
• Dye-sensitized solar cells make use of synthetic or naturally occurring dyes to sensitize wide- bandgap semiconductors such as titanium dioxide to visible light.
• the wide-bandgap semiconductor itself generally exhibits a strong roughness resulting in a high specific surface area.
• the dyes themselves provide the spectral sensitivities - no additional colour filters are required to create sensors with different spectral sensitivities.
• the different spectral sensitivities of individual sensor layers are achieved by the use of different, (in the final result) non-significantly interfering, spectral sensitizers.
• One particular advantage of the present invention is the flexibility it permits in design and manufacture.
• the order of the layers is necessarily fixed in descending wavelength chromatic sequence because it relies on wavelength-related penetration depth; the choice of wavelength of any one layer restricts the wavelength choice of other layers, closely separated wavelengths being impossible to measure because the physical size of the associated structures then prevent certain penetration depths being accessed; wavelengths beyond the human-visible range are not included (possibly an ultra-violet upper layer would be too shallow to construct, and a infra-red layer too deep for a strong enough signal to be sensed, in a single device with fixed dynamic ranges) ; and the image has to be deconvoluted from the measured signals because the upper layers of the device also measure electromagnetic radiation at wavelengths intended to be measured at the lower levels of the device (i.e., the uppermost ⁇ blue' sensing layer will also absorb and record green and red light) .
• the present device has none of the above restrictions.
• the order of the layers is not necessarily fixed in descending chromatic sequence, although this may of course be desirable, because the sensing technology used is not penetration- depth dependant: thus, for instance, a five-layer device measuring infra-red, red, green, blue and ultra-violet signals could be constructed with 120 different possible layer sequences, the optimal one being chosen dependant on the desired results and the sensitivities of the possible layers; and here again, it has to be noted that different dyes could be used to enable different sensitivities to the same narrow wavelength band. Closely spaced wavelength can, if desired, be accurately sensed because the layers do not physically restrict this. Wavelengths beyond the human-visible range are readily detectable with appropriate dyes.
• deconvolution is easier, because although there will be some absorption by the upper layers of wavelengths intended to be measured by the lower layers, this can be avoided to a much greater extent. It also provides that more of the incoming radiation is correctly sensed in the appropriate layers, thus providing a device of greater and more accurate sensitivity as well as improved resolution, which in turn makes reconstruction of a full true-colour image, or whatever false-colour images may be desired, much easier.
• a single sensor element itself is subject matter of claim 1.
• a device containing multiples sensor elements is claimed in claim 14.
• a sensor element is capable of sensing more than one spectral band of electromagnetic radiation with the same (x-y) spatial location, especially where the dimensions x-y-z form a set of Cartesian coordinates with z parallel to the direction of incident electromagnetic radiation. This relates to sensing more 00721
• Said element consists of a stack of sub-elements each capable of sensing different spectral bands of electromagnetic radiation, and these sub-elements each contain a non-silicon semiconductor where the non-silicon semiconductor in each sub-element is sensitive to and/or has been sensitized to be sensitive to different spectral bands of electromagnetic radiation.
• the term "sensitized to be sensitive” has to be seen as comprising that the material is inherently photosensitive to, and/or has been treated with one or more materials hereinafter termed dyes to make the combination of such materials and the semiconductor photosensitive to said spectral bands.
• the sensitization is achieved through the use of dyes within the wide-bandgap semiconductors.
• the sensor element is positioned in an array, which is not necessarily a regular array, e.g. a number of sensors can be arranged in different distances one from another.
• the sensor elements can be used for image capture or for non-image capture applications.
• the sensor element when used as part of a one-dimensional or two-dimensional array or three-dimensional array as part of a device used for image capture where the image capture can be done directly this is related to one instant of time or built up in any way over a period of time, such as but not limited to scanning.
• a sensor element can be a single sensor element.
• one spectral band is in the human- visible range and in other embodiments a band is in the non- human visible range.
• a preferred embodiment uses the full-colour human visible range.
• Another embodiment uses regular 2D arrays, i.e. direct image capture. Such arrays are not necessarily planar.
• Another embodiment uses regular ID arrays and scanning techniques, i.e. 'indirect' capture. Such arrays are not necessarily linear.
• a OD array and ..scanning techniques are used, i.e. very indirect capture, e.g. a single element of one type, scanning, as part of an array of array of such.
• a first sensor high IR, low IR
• R,G,B second sensor
• a third sensor low UV, high UV
• the stack of sub-elements is parallel, wherein in other embodiments the stack is non-parallel to the front surface, i.e. inclined, circular, spherical, including domed or cylindrical, or parabolic geometries etc. .
• Fig. 1 shows a schematic cross-sectional view of a sensor according to the invention showing the geometry of the layers and contacts;
• Fig. 2 shows a schematic cross-sectional view of a device according to the invention with 3 sensors according to Fig. 1;
• Fig. 3 shows a graphic illustration of the absorption for three dyes in dependency on their wavelength
• Fig. 4 the signal response for a sensor according one embodiment of the invention following Fig. 1 or Fig. 2;
• Fig. 5 the signal response for a stacked sensor according to prior art or stacked in a non preferred way
• Fig. 6 the absorption spectra of mesoporous titanium dioxide films dyed with merocyanine dyes ScI, Sc2 and Sc3 ;
• Fig. 7 the normalized spectral response (IPCE) of individual photoelectrochemical cells assembled from the dye- sensitized TiO 2 films shown in Fig. 6;
• Fig. 8 the spectral response of the cells of Fig. 6 and 7;
• Fig. 9 said cells integrated into a stack.
• a colour sensing image device comprises a plurality of sensors 1.
• One such sensor is shown in Fig. 1 with a schematic cross- sectional view showing the geometry of the layers and contacts.
• Each sensor 1 represents one pixel.
• the colour sensing image device consists preferably of a two- dimensional array of pixels, each one of which is preferably identical, and consists of a number of similar but non-identical layers, as shown in Figure 1 (layers 3, 4, 5, 6, 7, and 8) , on top of a substrate 2.
• Said substrate 2 also supports various elements 9 interspersed among the pixels 1.
• the substrate 2 and the elements 9 are structures into which electronic connections 11 and/or active electronic components are embedded to permit addressing of upper layers 3 to 8.
• these contain electronic components of a charge coupled device as known to someone skilled in the art. For sake of simplicity these connections and components are not explained further.
• photosensitive or photoactive layers (layer 3, 5, 7) are deposited onto the substrate 2, separated by insulating layers 4 and 6 deposited alternately with the photosensitive or photoactive layers.
• These photosensitive or photoactive layers 3, 5, and 7 contain a conducting or semiconducting material in which charge is generated upon excitation with electromagnetic radiation. Radiation is either absorbed by the semiconducting or conducting material itself, or preferably by a sensitizer, which sensitizes the generation of charge in the semiconducting or conducting material. Due to the use of different sensitizers or different semiconducting or conducting materials the different layers exhibit different spectral sensitivities towards electromagnetic radiation.
• narrow sensitivity of a lower layer 3 may also comprise and extend to wavelength portions which are already covered by another upper layer, e.g. 5 or 7, because light from said portions of a spectrum will already be absorbed before entering said lower layer, e.g. 3 or 5.
• the photosensitive or photoactive layers 3, 5, and 7 each consists of a porous inorganic semiconductor with an average pore size from 2 - 500 run.
• the layer may also contain a sec- ond medium capable of transporting charge.
• the conductor/semiconductor and the medium preferably form an interpenetrating network.
• this medium is a semiconductor, an organic charge transport material or a solid or liquid electrolyte.
• the photoactive layers are separated by insulating layers (layer 4 and 6) .
• These insulators are preferably porous with an average pore size from 2 - 1000 nm and may contain the same medium as described for layers 3, 5 and 7.
• Element 9 is an insulator positioned on one side of or surrounding the layers 3 to 7 or as shown 8.
• Element 9 hosts electric connections 11, 12 between the photoactive layers and the substrate 2.
• Each photosensitive layer 3, 5, 7 can thereby be addressed via the electronic components or conducting leads 11, 12 of the substrate 2.
• Electrical contact to the medium is thus either provided via direct contact of the medium and an electric connection in the substrate 2 or via element 9 : and/or a further layer 8 or layers can be deposited on top of the uppermost sensitive layer which provides electrical contact to the medium, provided that this layer or layers is/are so constituted and/or designed that it does/they do not block access of electromagnetic radiation to the photosensitive layers.
• All layers can hold additional materials, which absorb electromagnetic radiation.
• these materials are optical filter substances.
• pixels 1 as described in Figure 1 in parallel will produce a one or two dimensional array (see Figure 2 with three pixel 20, 21 and 22) - preferably these pixels form a 2-dimensional array which is then useable for im- aging purposes. They can be formed on a common substrate 2.
• the present invention can be used for example in a two- dimensional embodiment to directly capture images, as in a charge-coupled device, or in a one-dimensional, preferably linear array, to scan images, as in a colour copier.
• the detector 1 comprises a stack of sub- elements stacked parallel or inclined to the direction of the incoming electromagnetic radiation, which is oriented, in Fig, 1 or 2 as to be oriented vertically to the front surface 8 of the pixel detectors 1, 20, 21 or 22.
• the stack elements can be produced as layers 3, 4,5, 6, 7 and 8 perpendicular to the main direction of the incident light. However it is also possible to prepare the layers with a lateral step-function, i.e. when the angle of incidence is not perpendicular to the surface of layer 8 but oblique and inclined.
• the layers 4 and 6 are insulating and/or carry the preferably transparent electrodes to be connected with the control unit of the pixel and the device as a whole.
• Fig. 3, 4 and 5 show two embodiments of a distribution of the dyes used for absorption in the different layers according to Fig. 3 and the resulting wavelengths responses.
• Fig. 3 shows a graphic illustration of the absorption 30 for three dyes in dependency on their wavelength 40;
• Fig. 4 shows the signal 41 of the signal responses for a sensor according one embodiment of the invention following Fig. i or Fig. 2 against the wavelength 40;
• Fig. 5 shows the signal 42 of the signal response for a stacked sensor according to prior art or stacked in a non preferred way.
• the reference numerals 31, 32 and 33 designate the absorption curves of three different dyes; from left to right a blue dye, a green dye and a red dye.
• the name of the dyes relates to the main colour component they absorb. It can be seen that the absorption curves 31, 32 and 33 are overlapping.
• the sequence of the different photosensitive layers 3, 5 and 7 comprises the red, the green and the blue dye, respectively.
• Said dyes having the absorption curves 31, 32 and 33, respectively, have the following effect on the transmitted light.
• the uppermost, the blue dye layer 7 with absorption curve 31 absorbs light from said wavelength range, giving as a result the signal response 51 as shown in Fig. 4.
• the not absorbed light i.e. having a greater wavelength (greener and red) , travels through layer 6 and enters layer 5.
• the so called green dye layer 5 with absorption curve 32 absorbs light from said wavelength range, giving as a result the signal response 52 as shown in Fig. 4.
• the not absorbed light i.e.
• Fig. 5 now shows another embodiment wherein the colours used within the stacked layers 3, 5 and 7 are inverted, i.e. the uppermost layer is the red layer with the absorption curve 33, followed by the green layer with the absorption curve 32 and finally the bottom layer is the blue layer with the absorption curve 31. Then the signal answers of the different layers are 63, 62 and 61, respectively.
• Quantum dots are small devices that contain a tiny droplet of free electrons. They are fabricated in semiconductor materials and have typical dimensions between nanometers to a few microns. Such sensitization can be reached - but is not limited to - by a thin layer of a narrow bandgap semiconductor or particles of the said narrow bandgap semiconductor deposited on top of the wide bandgap semiconductor with a layer thickness or average particle diameter respectively of typically 1 to 400 nm.
• the so-prepared films were immersed into an alcoholic solution (0.5 mg/ml) of different merocyanine dyes as mentioned below for 48 hours at room temperature.
• the dyed TiO 2 electrodes were rinsed with ethanol and dried in air.
• a transparent counter electrode was prepared, consisting of conducting glass and a thin layer of platinum according to N. Papageorgiou, W. F. Maier, M. Graetzel, J. Electrochem Soc. 144 (1997) 876. Closed photoelectrochemical cells were assembled according to P. Wang et al., Nature Materials 2 (2003) 402.
• the electrolyte used contained an organic solvent, 0.5 moles/liter lithium iodide and 0.02 moles/liter iodine.
• IPCE spectral response
• Fig. 6 shows the absorption spectra of mesoporous titanium dioxide films dyed with merocyanine dyes ScI, Sc2 and Sc3.
• the electrodes were deposited onto conducting glass (fluorine-doped tin(IV) oxide) , exposed to an alcoholic solution of the three different merocyanine dyes for 24 hours.
• the three films show distinctively different absorption maxima at 416 nm (ScI) , 509 nm (Sc2) and 548 nm (Sc3) .
• Fig. 7 shows the normalized spectral response (IPCE) of individual photoelectrochemical cells assembled from the dye-sensitized TiO 2 films shown in Fig. 6.
• the spectral response generally follows the shape of the absorption spectra with the maxima of the spectral response corresponding to the maxima apparent in the absorption spectra.
• Fig. 8 shows the spectral response of the same cells integrated into a stack as shown in Pig. 9.
• the three cells have received the reference numerals 30, 31 and 32. They comprise a mesoporous core 40, 41 and 42, respectively, with the dyes ScI, Sc2 and Sc3, respectively.
• the penetration depth of different wave length is shown with arrows 50, 51 and 52, respectively.
• Each cell 30, 31 and 32 has two conducting glass substrates 60 with electrical contacts 61.
• Said dye comprising cores 40, 41 and 42 are mounted on one glass substrate 60 between the two glass substrates 60 of one cell 40, 41 and 42, respectively.
• Sealing elements 62 retain an electrolyte 63 within the confined space between the substrates 60.
• Such a stack is one example of an embodiment with three nearly identical cells, beside the different impregnation of the core 40, 41 and 42 with the dyes ScI, Sc2 and Sc3, respectively.
• the normalized spectral response of the uppermost cell 30 (with ScI) is not affected by the underlying stack.
• the normalized spectral response of cell 31 (with Sc2) changes due to the filter layer of the ScI cell 30 - especially in the area from 400 to 450 nm, where the normalized spectral response is reduced from above 30 to below 10 % through the overlying ScI cell 30.
• the third cell 32 in the stack is most strongly affected by the integration into the stack. Due to the filter effect of top layers the spectral response Of 1 the Sc3 cell 32 within the stack changes significantly.
• the stack of cells 30, 31, 32 is sensitive to three distinct wavelength ranges: 400-475 nm; 475-620 nm and 620 to 700 nm.
• the dyes used are such as but not limited to cyanine, merocya- nine, phtalocyanine, porphyrins, coumarine, squaraine and/or in- doline dyes and/or ruthenium polypyridyl complexes.
• cyanine merocya- nine, phtalocyanine, porphyrins, coumarine, squaraine and/or in- doline dyes and/or ruthenium polypyridyl complexes.
• Using non- sensitized TiO 2 it is possible to assemble a UV-sensitive detector because it starts to absorb light at about 400 Nanometer.
• Ruthenium-dye sensitized photodetectors can detect NIR light up to wavelength of 900 Nanometer.
• Zinc porphyrine dye shows a strong absorption in the blue and three moderate transitions in the spectral range of 500 to 650 Nanometer.
• Ruthenium N749 so called black dye
• the use of thicker films of such a dye with light scattering particles can be contemplated for the bottom cell in a stack of photosensors.
• Coumarine C343 has a strong absorption band around 400 to 450 Nanometer and a good photon to electron conversion efficiency.
• the invention allows to build nanocrystalline semiconductor electrodes.
• Preferred materials for the sensor are p-type material, redox electrolyte and organic charge transport material.
• the photoresponse can be tuned via the thickness of the sensitized TiO 2 layer.
• the top stack elements show a filter effect, i.e. the thickness of these layers are greater.
• a filter effect between 0,5 and 15 micrometer (equally applicable for the dense tin oxide layer, although a thin thickness is usually sufficient)
• increasing the thickness of the top layer from 2 micrometer to 7 micrometer improves the absorption from 85 to 90 % to more than 99 % thus avoiding potential cross-talk in deeper layers.
• the actual interesting thickness heavily depends on the dye used.

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