JP2008522418A - カラー画像検出のための多色高感度デバイス - Google Patents

カラー画像検出のための多色高感度デバイス Download PDF

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JP2008522418A
JP2008522418A JP2007543678A JP2007543678A JP2008522418A JP 2008522418 A JP2008522418 A JP 2008522418A JP 2007543678 A JP2007543678 A JP 2007543678A JP 2007543678 A JP2007543678 A JP 2007543678A JP 2008522418 A JP2008522418 A JP 2008522418A
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sensor element
electromagnetic radiation
element according
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dyes
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JP2008522418A5 (enExample
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グレーツェル、ミヒァエル
エッジ、ゴードン
アートレイ、リチャード、ジョン
バッハ、ウド
Original Assignee
エーペーエフエル ゼルヴィース デス リラツィオーンス インドゥストリエレス（エス・エル・イー）
イーテク アーゲー
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Publication of JP2008522418A publication Critical patent/JP2008522418A/ja
Publication of JP2008522418A5 publication Critical patent/JP2008522418A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2007543678A 2004-12-03 2005-12-05 カラー画像検出のための多色高感度デバイス Pending JP2008522418A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04028707A EP1667246A1 (en) 2004-12-03 2004-12-03 A multi-colour sensitive device for colour image sensing
PCT/CH2005/000721 WO2006058452A1 (en) 2004-12-03 2005-12-05 A multi-colour sensitive device for color image sensing

Publications (2)

Publication Number Publication Date
JP2008522418A true JP2008522418A (ja) 2008-06-26
JP2008522418A5 JP2008522418A5 (enExample) 2010-01-28

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JP2007543678A Pending JP2008522418A (ja) 2004-12-03 2005-12-05 カラー画像検出のための多色高感度デバイス

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US (1) US20090294890A1 (enExample)
EP (2) EP1667246A1 (enExample)
JP (1) JP2008522418A (enExample)
CN (1) CN101069287B (enExample)
WO (1) WO2006058452A1 (enExample)

Cited By (19)

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US7986018B2 (en) 2006-10-23 2011-07-26 Sony Corporation Solid-state imaging device
JP2016530701A (ja) * 2013-06-13 2016-09-29 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 光学検出器及び当該光学検出器の製造方法
US9989623B2 (en) 2013-06-13 2018-06-05 Basf Se Detector for determining a longitudinal coordinate of an object via an intensity distribution of illuminated pixels
US10012532B2 (en) 2013-08-19 2018-07-03 Basf Se Optical detector
US10094927B2 (en) 2014-09-29 2018-10-09 Basf Se Detector for optically determining a position of at least one object
US10120078B2 (en) 2012-12-19 2018-11-06 Basf Se Detector having a transversal optical sensor and a longitudinal optical sensor
US10353049B2 (en) 2013-06-13 2019-07-16 Basf Se Detector for optically detecting an orientation of at least one object
US10412283B2 (en) 2015-09-14 2019-09-10 Trinamix Gmbh Dual aperture 3D camera and method using differing aperture areas
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
US10890491B2 (en) 2016-10-25 2021-01-12 Trinamix Gmbh Optical detector for an optical detection
US10948567B2 (en) 2016-11-17 2021-03-16 Trinamix Gmbh Detector for optically detecting at least one object
US10955936B2 (en) 2015-07-17 2021-03-23 Trinamix Gmbh Detector for optically detecting at least one object
US11041718B2 (en) 2014-07-08 2021-06-22 Basf Se Detector for determining a position of at least one object
US11060922B2 (en) 2017-04-20 2021-07-13 Trinamix Gmbh Optical detector
US11067692B2 (en) 2017-06-26 2021-07-20 Trinamix Gmbh Detector for determining a position of at least one object
US11125880B2 (en) 2014-12-09 2021-09-21 Basf Se Optical detector
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
US11428787B2 (en) 2016-10-25 2022-08-30 Trinamix Gmbh Detector for an optical detection of at least one object
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object

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JP5084730B2 (ja) * 2006-07-05 2012-11-28 日本化薬株式会社 色素増感太陽電池
JP2008066402A (ja) * 2006-09-05 2008-03-21 Fujifilm Corp 撮像素子および撮像装置
DE102006056949B4 (de) * 2006-11-30 2011-12-22 Ruprecht-Karls-Universität Heidelberg Verfahren und Vorrichtung zur Detektion mindestens einer Eigenschaft von mindestens einem Objekt mit einem Mikrochip
DE102007012115A1 (de) * 2006-11-30 2008-06-05 Osram Opto Semiconductors Gmbh Strahlungsdetektor
DE102008016100A1 (de) * 2008-03-28 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Strahlungsdetektor und Verfahren zur Herstellung einer Mehrzahl von Detektorelementen
US7910954B2 (en) * 2008-10-28 2011-03-22 Sony Ericsson Mobile Communications Ab Image sensor element and image sensor
US8816460B2 (en) 2009-04-06 2014-08-26 Nokia Corporation Image sensor
TW201119019A (en) * 2009-04-30 2011-06-01 Corning Inc CMOS image sensor on stacked semiconductor-on-insulator substrate and process for making same
US8179457B2 (en) 2009-06-23 2012-05-15 Nokia Corporation Gradient color filters for sub-diffraction limit sensors
US8198578B2 (en) 2009-06-23 2012-06-12 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
US8134115B2 (en) * 2009-06-23 2012-03-13 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
US8461567B2 (en) * 2010-06-24 2013-06-11 Nokia Corporation Apparatus and method for sensing photons
US8653618B2 (en) * 2011-09-02 2014-02-18 Hoon Kim Unit pixel of color image sensor and photo detector thereof
US9665182B2 (en) 2013-08-19 2017-05-30 Basf Se Detector for determining a position of at least one object
JP6260354B2 (ja) * 2014-03-04 2018-01-17 株式会社リコー 撮像装置、調整装置および調整方法
JP6527417B2 (ja) * 2014-09-05 2019-06-05 パナソニック株式会社 光電変換素子およびその製造方法、ならびに多孔質電極形成用分散液
WO2016146725A1 (en) 2015-03-17 2016-09-22 Basf Se Optical data reader
WO2020054764A1 (ja) * 2018-09-12 2020-03-19 Ｎｓマテリアルズ株式会社 赤外線センサ及びその製造方法

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JP2002176191A (ja) * 2000-09-27 2002-06-21 Fuji Photo Film Co Ltd 高感度受光素子及びイメージセンサー

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DE19808936A1 (de) * 1998-03-03 1999-09-16 Aventis Res & Tech Gmbh & Co Photodetektor und seine Verwendung
US6291763B1 (en) * 1999-04-06 2001-09-18 Fuji Photo Film Co., Ltd. Photoelectric conversion device and photo cell
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP4461656B2 (ja) * 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
US7154545B2 (en) * 2001-04-30 2006-12-26 Hewlett-Packard Development Company, L.P. Image scanner photosensor assembly with improved spectral accuracy and increased bit-depth
FR2869454B1 (fr) * 2004-04-22 2006-11-03 Commissariat Energie Atomique Procede de fabrication de couches minces semi-conductrices photosensibilisees.

Patent Citations (1)

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JP2002176191A (ja) * 2000-09-27 2002-06-21 Fuji Photo Film Co Ltd 高感度受光素子及びイメージセンサー

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969987B2 (en) 2006-10-23 2015-03-03 Sony Corporation Solid-state imaging device
US7986018B2 (en) 2006-10-23 2011-07-26 Sony Corporation Solid-state imaging device
US10120078B2 (en) 2012-12-19 2018-11-06 Basf Se Detector having a transversal optical sensor and a longitudinal optical sensor
US10845459B2 (en) 2013-06-13 2020-11-24 Basf Se Detector for optically detecting at least one object
JP2016530701A (ja) * 2013-06-13 2016-09-29 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 光学検出器及び当該光学検出器の製造方法
US9989623B2 (en) 2013-06-13 2018-06-05 Basf Se Detector for determining a longitudinal coordinate of an object via an intensity distribution of illuminated pixels
US10353049B2 (en) 2013-06-13 2019-07-16 Basf Se Detector for optically detecting an orientation of at least one object
US10823818B2 (en) 2013-06-13 2020-11-03 Basf Se Detector for optically detecting at least one object
US10012532B2 (en) 2013-08-19 2018-07-03 Basf Se Optical detector
US11041718B2 (en) 2014-07-08 2021-06-22 Basf Se Detector for determining a position of at least one object
US10094927B2 (en) 2014-09-29 2018-10-09 Basf Se Detector for optically determining a position of at least one object
US11125880B2 (en) 2014-12-09 2021-09-21 Basf Se Optical detector
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
US10955936B2 (en) 2015-07-17 2021-03-23 Trinamix Gmbh Detector for optically detecting at least one object
US10412283B2 (en) 2015-09-14 2019-09-10 Trinamix Gmbh Dual aperture 3D camera and method using differing aperture areas
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
US10890491B2 (en) 2016-10-25 2021-01-12 Trinamix Gmbh Optical detector for an optical detection
US11428787B2 (en) 2016-10-25 2022-08-30 Trinamix Gmbh Detector for an optical detection of at least one object
US10948567B2 (en) 2016-11-17 2021-03-16 Trinamix Gmbh Detector for optically detecting at least one object
US11415661B2 (en) 2016-11-17 2022-08-16 Trinamix Gmbh Detector for optically detecting at least one object
US11635486B2 (en) 2016-11-17 2023-04-25 Trinamix Gmbh Detector for optically detecting at least one object
US11698435B2 (en) 2016-11-17 2023-07-11 Trinamix Gmbh Detector for optically detecting at least one object
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
US11060922B2 (en) 2017-04-20 2021-07-13 Trinamix Gmbh Optical detector
US11067692B2 (en) 2017-06-26 2021-07-20 Trinamix Gmbh Detector for determining a position of at least one object

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Publication number Publication date
US20090294890A1 (en) 2009-12-03
CN101069287A (zh) 2007-11-07
WO2006058452A1 (en) 2006-06-08
CN101069287B (zh) 2010-11-10
EP1667246A1 (en) 2006-06-07
WO2006058452A8 (en) 2006-09-08
EP1817807A1 (en) 2007-08-15

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