CN101069287A - 用于彩色图像感测的多色敏器件 - Google Patents
用于彩色图像感测的多色敏器件 Download PDFInfo
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- CN101069287A CN101069287A CNA2005800414824A CN200580041482A CN101069287A CN 101069287 A CN101069287 A CN 101069287A CN A2005800414824 A CNA2005800414824 A CN A2005800414824A CN 200580041482 A CN200580041482 A CN 200580041482A CN 101069287 A CN101069287 A CN 101069287A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Electrochemistry (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04028707A EP1667246A1 (en) | 2004-12-03 | 2004-12-03 | A multi-colour sensitive device for colour image sensing |
EP04028707.0 | 2004-12-03 | ||
PCT/CH2005/000721 WO2006058452A1 (en) | 2004-12-03 | 2005-12-05 | A multi-colour sensitive device for color image sensing |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101069287A true CN101069287A (zh) | 2007-11-07 |
CN101069287B CN101069287B (zh) | 2010-11-10 |
Family
ID=34927643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800414824A Expired - Fee Related CN101069287B (zh) | 2004-12-03 | 2005-12-05 | 用于彩色图像感测的多色敏器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090294890A1 (zh) |
EP (2) | EP1667246A1 (zh) |
JP (1) | JP2008522418A (zh) |
CN (1) | CN101069287B (zh) |
WO (1) | WO2006058452A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102986030A (zh) * | 2010-06-24 | 2013-03-20 | 诺基亚公司 | 用于感测光子的设备和方法 |
CN104902165A (zh) * | 2014-03-04 | 2015-09-09 | 株式会社理光 | 成像装置、调节装置以及调节方法 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2655192A1 (en) * | 2006-07-05 | 2008-01-10 | Nippon Kayaku Kabushiki Kaisha | Dye-sensitized solar cell |
JP2008066402A (ja) * | 2006-09-05 | 2008-03-21 | Fujifilm Corp | 撮像素子および撮像装置 |
JP4349456B2 (ja) | 2006-10-23 | 2009-10-21 | ソニー株式会社 | 固体撮像素子 |
DE102006056949B4 (de) * | 2006-11-30 | 2011-12-22 | Ruprecht-Karls-Universität Heidelberg | Verfahren und Vorrichtung zur Detektion mindestens einer Eigenschaft von mindestens einem Objekt mit einem Mikrochip |
DE102007012115A1 (de) * | 2006-11-30 | 2008-06-05 | Osram Opto Semiconductors Gmbh | Strahlungsdetektor |
DE102008016100A1 (de) * | 2008-03-28 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer Strahlungsdetektor und Verfahren zur Herstellung einer Mehrzahl von Detektorelementen |
US7910954B2 (en) | 2008-10-28 | 2011-03-22 | Sony Ericsson Mobile Communications Ab | Image sensor element and image sensor |
US8816460B2 (en) | 2009-04-06 | 2014-08-26 | Nokia Corporation | Image sensor |
TW201119019A (en) * | 2009-04-30 | 2011-06-01 | Corning Inc | CMOS image sensor on stacked semiconductor-on-insulator substrate and process for making same |
US8198578B2 (en) | 2009-06-23 | 2012-06-12 | Nokia Corporation | Color filters for sub-diffraction limit-sized light sensors |
US8134115B2 (en) * | 2009-06-23 | 2012-03-13 | Nokia Corporation | Color filters for sub-diffraction limit-sized light sensors |
US8179457B2 (en) | 2009-06-23 | 2012-05-15 | Nokia Corporation | Gradient color filters for sub-diffraction limit sensors |
US8653618B2 (en) * | 2011-09-02 | 2014-02-18 | Hoon Kim | Unit pixel of color image sensor and photo detector thereof |
AU2013365772B2 (en) | 2012-12-19 | 2017-08-10 | Basf Se | Detector for optically detecting at least one object |
KR102246139B1 (ko) | 2013-06-13 | 2021-04-30 | 바스프 에스이 | 적어도 하나의 물체를 광학적으로 검출하기 위한 검출기 |
JP6440696B2 (ja) | 2013-06-13 | 2018-12-19 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 少なくとも1つの物体の方位を光学的に検出する検出器 |
US9741954B2 (en) | 2013-06-13 | 2017-08-22 | Basf Se | Optical detector and method for manufacturing the same |
KR102191139B1 (ko) | 2013-08-19 | 2020-12-15 | 바스프 에스이 | 광학 검출기 |
WO2015024870A1 (en) | 2013-08-19 | 2015-02-26 | Basf Se | Detector for determining a position of at least one object |
KR102397527B1 (ko) | 2014-07-08 | 2022-05-13 | 바스프 에스이 | 하나 이상의 물체의 위치를 결정하기 위한 검출기 |
JP6527417B2 (ja) * | 2014-09-05 | 2019-06-05 | パナソニック株式会社 | 光電変換素子およびその製造方法、ならびに多孔質電極形成用分散液 |
WO2016051323A1 (en) | 2014-09-29 | 2016-04-07 | Basf Se | Detector for optically determining a position of at least one object |
JP6637980B2 (ja) | 2014-12-09 | 2020-01-29 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 光学検出器 |
WO2016120392A1 (en) | 2015-01-30 | 2016-08-04 | Trinamix Gmbh | Detector for an optical detection of at least one object |
WO2016146725A1 (en) | 2015-03-17 | 2016-09-22 | Basf Se | Optical data reader |
KR102644439B1 (ko) | 2015-07-17 | 2024-03-07 | 트리나미엑스 게엠베하 | 하나 이상의 물체를 광학적으로 검출하기 위한 검출기 |
CN108141579B (zh) | 2015-09-14 | 2020-06-12 | 特里纳米克斯股份有限公司 | 3d相机 |
KR102492134B1 (ko) | 2016-07-29 | 2023-01-27 | 트리나미엑스 게엠베하 | 광학 센서 및 광학적 검출용 검출기 |
JP7241684B2 (ja) | 2016-10-25 | 2023-03-17 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも1個の対象物の光学的な検出のための検出器 |
JP2019532517A (ja) | 2016-10-25 | 2019-11-07 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光学的に検出するための光検出器 |
KR102452770B1 (ko) | 2016-11-17 | 2022-10-12 | 트리나미엑스 게엠베하 | 적어도 하나의 대상체를 광학적으로 검출하기 위한 검출기 |
US11860292B2 (en) | 2016-11-17 | 2024-01-02 | Trinamix Gmbh | Detector and methods for authenticating at least one object |
KR102623150B1 (ko) | 2017-04-20 | 2024-01-11 | 트리나미엑스 게엠베하 | 광 검출기 |
US11067692B2 (en) | 2017-06-26 | 2021-07-20 | Trinamix Gmbh | Detector for determining a position of at least one object |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1051752A2 (en) * | 1998-02-02 | 2000-11-15 | Uniax Corporation | Image sensors made from organic semiconductors |
DE19808936A1 (de) * | 1998-03-03 | 1999-09-16 | Aventis Res & Tech Gmbh & Co | Photodetektor und seine Verwendung |
US6291763B1 (en) * | 1999-04-06 | 2001-09-18 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and photo cell |
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
JP4278080B2 (ja) * | 2000-09-27 | 2009-06-10 | 富士フイルム株式会社 | 高感度受光素子及びイメージセンサー |
JP4461656B2 (ja) * | 2000-12-07 | 2010-05-12 | セイコーエプソン株式会社 | 光電変換素子 |
US7154545B2 (en) * | 2001-04-30 | 2006-12-26 | Hewlett-Packard Development Company, L.P. | Image scanner photosensor assembly with improved spectral accuracy and increased bit-depth |
FR2869454B1 (fr) * | 2004-04-22 | 2006-11-03 | Commissariat Energie Atomique | Procede de fabrication de couches minces semi-conductrices photosensibilisees. |
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2004
- 2004-12-03 EP EP04028707A patent/EP1667246A1/en not_active Withdrawn
-
2005
- 2005-12-05 WO PCT/CH2005/000721 patent/WO2006058452A1/en active Application Filing
- 2005-12-05 JP JP2007543678A patent/JP2008522418A/ja active Pending
- 2005-12-05 CN CN2005800414824A patent/CN101069287B/zh not_active Expired - Fee Related
- 2005-12-05 EP EP05810045A patent/EP1817807A1/en not_active Withdrawn
- 2005-12-05 US US11/720,794 patent/US20090294890A1/en not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102986030A (zh) * | 2010-06-24 | 2013-03-20 | 诺基亚公司 | 用于感测光子的设备和方法 |
CN102986030B (zh) * | 2010-06-24 | 2015-11-25 | 诺基亚公司 | 用于感测光子的设备和方法 |
CN104902165A (zh) * | 2014-03-04 | 2015-09-09 | 株式会社理光 | 成像装置、调节装置以及调节方法 |
CN104902165B (zh) * | 2014-03-04 | 2018-04-24 | 株式会社理光 | 成像装置、调节装置以及调节方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1817807A1 (en) | 2007-08-15 |
US20090294890A1 (en) | 2009-12-03 |
WO2006058452A8 (en) | 2006-09-08 |
JP2008522418A (ja) | 2008-06-26 |
EP1667246A1 (en) | 2006-06-07 |
WO2006058452A1 (en) | 2006-06-08 |
CN101069287B (zh) | 2010-11-10 |
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