CN101069287B - 用于彩色图像感测的多色敏器件 - Google Patents

用于彩色图像感测的多色敏器件 Download PDF

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Publication number
CN101069287B
CN101069287B CN2005800414824A CN200580041482A CN101069287B CN 101069287 B CN101069287 B CN 101069287B CN 2005800414824 A CN2005800414824 A CN 2005800414824A CN 200580041482 A CN200580041482 A CN 200580041482A CN 101069287 B CN101069287 B CN 101069287B
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CN
China
Prior art keywords
array
electromagnetic radiation
sub
sensing
layer
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Expired - Fee Related
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CN2005800414824A
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English (en)
Chinese (zh)
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CN101069287A (zh
Inventor
迈克·格雷塞尔
戈登·埃杰
理查德·约翰·阿特利
乌多·巴克
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EPFL SERVICE DES RELATIONS IND
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ETeCH AG
Sigma Corp
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Publication of CN101069287A publication Critical patent/CN101069287A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN2005800414824A 2004-12-03 2005-12-05 用于彩色图像感测的多色敏器件 Expired - Fee Related CN101069287B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04028707A EP1667246A1 (en) 2004-12-03 2004-12-03 A multi-colour sensitive device for colour image sensing
EP04028707.0 2004-12-03
PCT/CH2005/000721 WO2006058452A1 (en) 2004-12-03 2005-12-05 A multi-colour sensitive device for color image sensing

Publications (2)

Publication Number Publication Date
CN101069287A CN101069287A (zh) 2007-11-07
CN101069287B true CN101069287B (zh) 2010-11-10

Family

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CN2005800414824A Expired - Fee Related CN101069287B (zh) 2004-12-03 2005-12-05 用于彩色图像感测的多色敏器件

Country Status (5)

Country Link
US (1) US20090294890A1 (enExample)
EP (2) EP1667246A1 (enExample)
JP (1) JP2008522418A (enExample)
CN (1) CN101069287B (enExample)
WO (1) WO2006058452A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5084730B2 (ja) * 2006-07-05 2012-11-28 日本化薬株式会社 色素増感太陽電池
JP2008066402A (ja) * 2006-09-05 2008-03-21 Fujifilm Corp 撮像素子および撮像装置
JP4349456B2 (ja) 2006-10-23 2009-10-21 ソニー株式会社 固体撮像素子
DE102006056949B4 (de) * 2006-11-30 2011-12-22 Ruprecht-Karls-Universität Heidelberg Verfahren und Vorrichtung zur Detektion mindestens einer Eigenschaft von mindestens einem Objekt mit einem Mikrochip
DE102007012115A1 (de) * 2006-11-30 2008-06-05 Osram Opto Semiconductors Gmbh Strahlungsdetektor
DE102008016100A1 (de) * 2008-03-28 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Strahlungsdetektor und Verfahren zur Herstellung einer Mehrzahl von Detektorelementen
US7910954B2 (en) 2008-10-28 2011-03-22 Sony Ericsson Mobile Communications Ab Image sensor element and image sensor
US8816460B2 (en) * 2009-04-06 2014-08-26 Nokia Corporation Image sensor
TW201119019A (en) * 2009-04-30 2011-06-01 Corning Inc CMOS image sensor on stacked semiconductor-on-insulator substrate and process for making same
US8198578B2 (en) 2009-06-23 2012-06-12 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
US8134115B2 (en) 2009-06-23 2012-03-13 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
US8179457B2 (en) 2009-06-23 2012-05-15 Nokia Corporation Gradient color filters for sub-diffraction limit sensors
US8461567B2 (en) * 2010-06-24 2013-06-11 Nokia Corporation Apparatus and method for sensing photons
US8653618B2 (en) * 2011-09-02 2014-02-18 Hoon Kim Unit pixel of color image sensor and photo detector thereof
AU2013365772B2 (en) 2012-12-19 2017-08-10 Basf Se Detector for optically detecting at least one object
AU2014280334B2 (en) 2013-06-13 2018-02-01 Basf Se Optical detector and method for manufacturing the same
US10353049B2 (en) 2013-06-13 2019-07-16 Basf Se Detector for optically detecting an orientation of at least one object
JP2016529473A (ja) 2013-06-13 2016-09-23 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 少なくとも１つの物体を光学的に検出する検出器
AU2014310703B2 (en) 2013-08-19 2018-09-27 Basf Se Optical detector
KR20160044009A (ko) 2013-08-19 2016-04-22 바스프 에스이 하나 이상의 물체의 위치를 결정하기 위한 검출기
JP6260354B2 (ja) * 2014-03-04 2018-01-17 株式会社リコー 撮像装置、調整装置および調整方法
EP3167304A4 (en) 2014-07-08 2018-02-21 Basf Se Detector for determining a position of at least one object
JP6527417B2 (ja) * 2014-09-05 2019-06-05 パナソニック株式会社 光電変換素子およびその製造方法、ならびに多孔質電極形成用分散液
CN106716059B (zh) 2014-09-29 2020-03-13 巴斯夫欧洲公司 用于光学确定至少一个对象的位置的检测器
WO2016092451A1 (en) 2014-12-09 2016-06-16 Basf Se Optical detector
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
WO2016146725A1 (en) 2015-03-17 2016-09-22 Basf Se Optical data reader
EP3325917B1 (en) 2015-07-17 2020-02-26 trinamiX GmbH Detector for optically detecting at least one object
US10412283B2 (en) 2015-09-14 2019-09-10 Trinamix Gmbh Dual aperture 3D camera and method using differing aperture areas
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
US11428787B2 (en) 2016-10-25 2022-08-30 Trinamix Gmbh Detector for an optical detection of at least one object
EP3532796A1 (en) * 2016-10-25 2019-09-04 trinamiX GmbH Nfrared optical detector with integrated filter
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
EP4239371A3 (en) 2016-11-17 2023-11-08 trinamiX GmbH Detector for optically detecting at least one object
CN119958702A (zh) 2017-04-20 2025-05-09 特里纳米克斯股份有限公司 光学检测器
CN110998223B (zh) 2017-06-26 2021-10-29 特里纳米克斯股份有限公司 用于确定至少一个对像的位置的检测器
WO2020054764A1 (ja) * 2018-09-12 2020-03-19 Ｎｓマテリアルズ株式会社 赤外線センサ及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1296645A (zh) * 1998-02-02 2001-05-23 优尼爱克斯公司 有机半导体图像传感器
EP1207556A2 (en) * 2000-09-27 2002-05-22 Fuji Photo Film Co., Ltd. Light-receiving device and image sensor
CN1384658A (zh) * 2001-04-30 2002-12-11 惠普公司 改善光谱精度和提高位深度的图像扫描仪光敏传感器装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19808936A1 (de) * 1998-03-03 1999-09-16 Aventis Res & Tech Gmbh & Co Photodetektor und seine Verwendung
US6291763B1 (en) * 1999-04-06 2001-09-18 Fuji Photo Film Co., Ltd. Photoelectric conversion device and photo cell
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP4461656B2 (ja) * 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
FR2869454B1 (fr) * 2004-04-22 2006-11-03 Commissariat Energie Atomique Procede de fabrication de couches minces semi-conductrices photosensibilisees.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1296645A (zh) * 1998-02-02 2001-05-23 优尼爱克斯公司 有机半导体图像传感器
EP1207556A2 (en) * 2000-09-27 2002-05-22 Fuji Photo Film Co., Ltd. Light-receiving device and image sensor
CN1384658A (zh) * 2001-04-30 2002-12-11 惠普公司 改善光谱精度和提高位深度的图像扫描仪光敏传感器装置

Also Published As

Publication number Publication date
US20090294890A1 (en) 2009-12-03
EP1817807A1 (en) 2007-08-15
CN101069287A (zh) 2007-11-07
JP2008522418A (ja) 2008-06-26
WO2006058452A8 (en) 2006-09-08
EP1667246A1 (en) 2006-06-07
WO2006058452A1 (en) 2006-06-08

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