WO2006057246A1 - ダイヤモンド紫外光センサー - Google Patents
ダイヤモンド紫外光センサー Download PDFInfo
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- WO2006057246A1 WO2006057246A1 PCT/JP2005/021451 JP2005021451W WO2006057246A1 WO 2006057246 A1 WO2006057246 A1 WO 2006057246A1 JP 2005021451 W JP2005021451 W JP 2005021451W WO 2006057246 A1 WO2006057246 A1 WO 2006057246A1
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- WO
- WIPO (PCT)
- Prior art keywords
- diamond
- light
- electrode
- receiving part
- ultraviolet light
- Prior art date
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- 239000010432 diamond Substances 0.000 title claims abstract description 71
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 38
- 230000008859 change Effects 0.000 claims description 16
- 239000003870 refractory metal Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000007772 electrode material Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/0435—Schottky electrodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a diamond ultraviolet light sensor.
- Diamond semiconductors are known to behave as insulators in the intrinsic state with a band gap of about 5.5 eV (corresponding to about 225 nm at an optical wavelength) and a fairly large dopant (impurities) not added. ing.
- a method for growing a single crystal thin film is a microwave excitation process using an atmosphere containing substantially carbon and hydrogen, for example, CH (methane) and H (hydrogen) gas.
- Patent Document 1 A plasma vapor deposition method has been developed (Patent Document 1) and is widely used.
- Patent Document 2 a method of controlling the electrical conductivity of p-type (main carriers are holes) by adding B (boron) as a dopant in microwave-excited plasma vapor phase epitaxy is widely used!
- the microwave-excited plasma vapor deposition method is a vapor deposition method using an atmosphere containing hydrogen
- the surface of the grown diamond single crystal film is substantially a surface covered with hydrogen.
- the surface has a CH molecular structure in which dangling bonds of carbon atoms (C) are terminated by hydrogen atoms (H) (hereinafter referred to as “hydrogenation”).
- hydrogenation hydrogen atoms
- a surface conductive layer in which the holes of the main carriers are localized near the surface (within 2 nm) is generated in the nearby diamond.
- This surface conductive layer is also known to exist in undoped and boron-doped (100), (111) plane single crystal thin films and polycrystalline thin films as well.
- this surface conductive layer (1) is stable up to about 200 ° C, and (2) It can only occur on the hydrogenated diamond surface. It is also known that this surface conductive layer disappears by applying a solution treatment (oxidation treatment) that removes bonded hydrogen on the surface, for example, by dipping in a boiling sulfuric acid / nitric acid mixture. The inventors themselves have also confirmed.
- oxidation treatment oxidation treatment
- the light receiving unit is irradiated by a change in electrical resistance of the light receiving unit or a change in the amount of photoinduced current.
- a so-called optical sensor element that detects ultraviolet light Si semiconductors with detection sensitivity for visible light in the wavelength range of 400 nm to 650 nm, and detection sensitivity for visible light and other noise light in the infrared region are also used.
- AlGaN (0 ⁇ x ⁇ 1) semiconductors and diamond semiconductors, which do not have any, as the solid material of the light receiving part has been considered.
- the optical detection principle of these photosensor elements is that an electron-hole pair is generated in the semiconductor by irradiating the semiconductor of the light receiving unit with light having energy greater than or equal to the band gap. It detects changes in resistance or changes in the amount of photoinduced current. Therefore, an element structure can be constructed with a two-terminal element in which two electrodes are bonded to a semiconductor, and an extremely simple ultraviolet light sensor can be manufactured.
- An optical sensor element comprising a two-terminal element has a metal-semiconductor metal structure (MSM) type element having a comb-type electrode structure, and two different types of electrodes, a rectifying electrode and an ohmic electrode, Schottky elements that detect light through rectifying electrodes are widely used.
- MSM metal-semiconductor metal structure
- Non-Patent Document 1 uses a surface conductive layer of a polycrystalline diamond thin film as a light receiving portion, Ti for a first layer electrode, An MSM photoconductive sensor element using Au as an electrode is described which achieves a detection sensitivity of 0.03 AZW for 200 nm ultraviolet light irradiation.
- Non-Patent Document 2 a polycrystalline diamond film from which the surface conductive layer has been removed by an acid bath treatment is used for the light receiving part, Ti is used for the first layer electrode, and Au is used for the second layer electrode.
- Non-Patent Document 3 describes a shot in which Au is used as a rectifying electrode and Ti / Ag / Au (where the 7 "symbol indicates the deposition order) is formed on a polycrystalline diamond thin film as an ohmic electrode.
- the detection sensitivity is unknown, but the visible light blind ratio when irradiated with 200nm and 600nm light is 5 digits.
- Patent Document 2 uses a diamond polycrystalline thin film having a thickness of 40 ⁇ m or a (100) and (111) oriented thin film and a surface from which surface bonded hydrogen is removed as a light receiving portion.
- the output sensitivity is insufficient for practical use.
- Patent Document 3 discloses a diamond ultraviolet light sensor element using a surface conductive layer of diamond as a light receiving portion.
- the detection sensitivity wavelength of this element has characteristics over the entire visible light region, and the characteristics of diamond are as follows. It is a photoconductive sensor element that uses the defect level in the bandgap, and it cannot selectively detect ultraviolet rays below 250 nm.
- Non-Patent Document 1 .J ⁇ ooi, M.D. Whitfield, and R.B. Jackman, Appl. Phys ⁇ etts. 74, 3332 (199 9)
- Non-Patent Document 2 R. D. McKeagandR. B. Jackman, DiamondRelat. Mater. 7, 513 (1998)
- Non-Patent Document 3 M.D.
- Patent Document 1 Japanese Patent Publication No.59-27754
- Patent Document 2 Japanese Patent Laid-Open No. 11-248531
- Patent Document 3 Japanese Patent Laid-Open No. 11-097721
- a conventional ultraviolet light sensor element using a diamond semiconductor as a light-receiving part uses Ti / Au (where the 7 "symbol indicates the deposition order) for both rectifying and ohmic electrodes.
- Ti / Au where the 7 "symbol indicates the deposition order
- a typical Au-based electrode (Au-based electrode material) was used, but the Au-based electrode material had poor adhesion to diamond and low mechanical strength. Furthermore, there was a fatal defect that thermal stability was poor.
- the present invention avoids the complexity of the element structure while taking advantage of the characteristics of the photoconductive sensor element, and also has a high mechanical strength refractory metal carbide compound (TiC, ZrC, H1C, VC, NbC, TaC, CrC, MoC, and WC) are used for the rectifying electrode and the Z or ohmic electrode. Is to provide.
- a high mechanical strength refractory metal carbide compound TiC, ZrC, H1C, VC, NbC, TaC, CrC, MoC, and WC
- ultraviolet light having a wavelength of 260 nm or less irradiated to the light receiving unit is detected by detecting a change in electrical resistance or a light-induced current amount of the light receiving unit, and detecting visible light having a wavelength of 400 nm or more.
- Outgoing sensitivity is extremely small! It is a light sensor element, a flame sensor using the light sensor element, and an ultraviolet light sensor.
- Ultraviolet light sensor elements have already been industrialized in photoconductive, pn, pin, and Schottky types.
- the present invention relates to a photoconductive type or Schottky type sensor element having a two-terminal electrode.
- the present invention provides (1) a photoconductive type or Schottky type having a two-terminal electrode that detects light irradiated to the light receiving part by a change in electrical resistance of the light receiving part material or a change in photoinduced current.
- Carbide compound of refractory metal elements TiC, ZrC, H1C, VC, NbC for the rectifying electrode , TaC, CrC, MoC, and WC as a single layer, a reactive single metal capable of forming a solid solution with carnoid or carbon by reacting with diamond as the first layer on the ohmic electrode
- a diamond ultraviolet light sensor with a structure that uses at least one of the carbide compounds TiC, ZrC, HfC, VC, NbC, TaC, CrC, MoC, and WC in the second layer. is there
- the present invention provides (2) a photoconductive type having a two-terminal electrode that detects light irradiated to the light-receiving part based on a change in electrical resistance of the light-receiving part material or a change in photoinduced current.
- a Schottky-type photosensor element in which the diamond surface from which the surface conductive layer has been removed is used as a bonding interface between the light receiving portion and the electrode, and at least one electrode has a high electrode layer in contact with the diamond surface.
- This is a diamond ultraviolet light sensor composed of at least one carbide among carbide compounds of melting point metal elements TiC, ZrC, H1C, VC, NbC, TaC, CrC, MoC, and WC.
- the present invention provides (3) a photoconductive type having a two-terminal electrode that detects light irradiated to the light receiving part by a change in electrical resistance of the light receiving part material or a change in photoinduced current.
- a Schottky-type photosensor element that uses the diamond surface with the surface conductive layer removed as the interface between the light-receiving part and the electrode, and a carbide compound TiC of a refractory metal element on the uppermost layer of the ohmic electrode.
- the present invention provides (4) the above (1), characterized in that the diamond surface from which the surface conductive layer has been removed is a surface formed by acid-treating the hydrogen-terminated surface of diamond. (2), ( The diamond ultraviolet light sensor according to any one of 3).
- the electrical characteristics of the photoconductive type or Schottky diode also exhibit a reverse current of 10_14 A or less at room temperature and a rectification ratio of 9 digits or more with the forward current.
- the electrical / optical characteristics of the photoconductive or Schottky ultraviolet light sensor element of the present invention do not deteriorate even after a heat test of 500 ° C for 2 hours! ⁇ ⁇ ⁇ Has excellent thermal stability.
- the ultraviolet light sensor of the present invention is a photoconductive or Schottky element having a two-terminal electrode.
- a single-layer WC (thickness 2 nm) high melting point metal element is used in the rectifying electrode for diamond.
- the carbide compound is used, and in the ohmic electrode, Ti (thickness lOnm) is a reactive metal with diamond in the first layer, and WC (thickness) is a refractory metal element carbide compound in the second layer. lOnm) using a two-layer structure!
- the rectifying electrode it is necessary to use a high-melting-point metal power single-bye composite as a single layer without causing a metallurgical reaction with diamond.
- an electrode having a two-layer structure is required.
- the first layer is a single metal element that can react with diamond by heat treatment
- the second layer reacts with diamond by heat treatment.
- the heat treatment is a single metal that can react under vacuum or in an argon gas atmosphere at a temperature of up to 800 ° C. As a result of this heat treatment, a solid solution of carbide or carbon is bonded to the interface between the diamond and the electrode. Form in the vicinity.
- the first layer metal force bonded to diamond is the metal that can form a solid solution with carbide or carbon as a result of reacting with diamond as a result of heat treatment.
- the metal In an embodiment where only a single metal is required, for example, Ti is used.
- refractory metal carbide compounds are extremely heat-stable intermetallic compounds, in order to obtain a heat-stable ultraviolet light sensor, reactive Ti metal that exhibits ohmic properties is combined with refractory metal carbide compounds. It needs to be covered with something.
- high quality electrical and optical diamond semiconductors are CH (methane) and H (hydrogen).
- the present invention relates to a photoconductive or Schottky type sensor element in which the rectifying electrode and the ohmic electrode shown in FIGS. 1 and 2 are formed on the oxidation-treated surface, and ultraviolet and visible light having a wavelength of 220 to 60 Onm. By irradiating diamond light through this rectifying electrode, a visible light blind ratio of 5 digits is achieved.
- the Schottky sensor element shown in FIGS. 1 and 2 was fabricated by the process described below, and the current-voltage (I-V) characteristics and the optical response characteristics to ultraviolet light were measured.
- a diamond-epitaxial single crystal film 2 doped with B (boron), which is a p-type dopant element, includes CH (methane) as a source gas and H (hydrogen) as a source gas. Dilution carrier
- Nitrogen content of length 2.5 X width 2.5 X thickness 0.5 mm produced by high-pressure synthesis method using microwave-excited plasma vapor phase growth method used as a source gas is lb class A thickness of 0.7 m was grown on the diamond (100) single crystal substrate 1.
- the grown diamond (100) plane epitaxial single crystal film 2 is subjected to an oxidation treatment by immersing it in boiling sulfuric acid and hydrochloric acid mixed solution for 15 minutes, and then is overlaid with ultrapure water. Flow washed. After that, dissolve acetone and isopropyl alcohol respectively. Ultrasonic cleaning in liquid and using a photolithography method, the resist for fabrication of the Ti / WC electrode shown in 3 in Fig. 1 and 3 in Fig. 2 (where the 7 "symbol indicates the deposition sequence) is prepared. Putter Jung was held.
- Ti (thickness lOnm) from the sputtering of Ti and WC target material Ti (thickness lOnm), followed by WC (thickness lOnm) from the second layer by magnetron sputtering using Ar gas
- the Ti / WC electrodes were formed by the lift-off method. Thereafter, an ohmic electrode was formed by performing a heat treatment at 500 ° C. for 1 hour in an Ar atmosphere.
- resist patterning of the WC electrode shown in 4 of FIG. 1 and 4 of FIG. 2 was performed again by a photolithography method. Thereafter, WC (thickness 2) was similarly deposited by sputtering, and a WC rectifying electrode was formed by lift-off.
- the width between the Ti / WC electrode and the WC electrode (corresponding to 1L in FIGS. 1 and 2) is 10 ⁇ m, and the diameter of the WC electrode (corresponding to 2L in FIGS. 1 and 2) is It was 200 / zm.
- Thermal stability was achieved by heat-treating the UV sensor in an Ar atmosphere and examining changes in electrical and optical properties.
- the Schottky type sensor element manufactured in this way was set in a vacuum chamber equipped with a two-short prober, and the inside of the chamber was maintained at 0.05 Pa by a turbo molecular pump. I V characteristics were measured by the two probe method. The light response characteristic was measured by irradiating the ultraviolet light sensor element through a quartz window with radiation light from a xenon mercury lamp monochromatized in the range of 220 to 600 nm through a spectrometer.
- Fig. 3a shows the IV characteristics measured in the dark room where no light was applied to the sensor element before heat treatment
- Fig. 3b shows the IV measured while being irradiated with ultraviolet light having a wavelength of 220 nm. Show properties.
- the reverse reverse current that is not irradiated with ultraviolet light of this device is 10_14 A or less, which is below the detection limit up to a voltage of 30 V, and it can be seen that extremely weak dark current is realized.
- the rectification ratio with the forward current value has reached 9 digits or more, and excellent Schottky characteristics can be obtained.
- Fig. 4 shows IV characteristics after heat treatment at 500 ° C for 1 hour
- Fig. 5 shows photoresponse characteristics at a reverse voltage of 3.5 V after heat treatment at wavelengths of 220 to 600 nm.
- the reverse dark current is 10 -14 A or less, and the steepness of the forward current rise is improved compared to that before heat treatment.
- the rectification ratio with the forward current is 9 digits or more, indicating a very thermally stable Schottky characteristic. From the photoresponse characteristics, the wavelength cutoff is about 260 nm, and the visible light blind ratio is about 5 digits!
- a conventional diamond ultraviolet light sensor element uses a laminated or alloy electrode material containing Au, and the intermetallic compound of Au is extremely poor in thermal stability, and its mechanical strength is weak. The company was unable to produce an excellent UV sensor element.
- the present invention has developed a heat stable ultraviolet light sensor by developing a heat stable electrode that can operate sufficiently even after being exposed to a high temperature of 500 ° C.
- the ultraviolet light sensor element of the present invention includes an industrial combustion furnace, a gas turbine engine, a combustion control monitor such as a jet engine, a flame sensor for a flame detector linked to a fire alarm, and a large-scale integration of silicon. It is applied to stepper exposure devices used in circuit manufacturing processes and ultraviolet sensors in ultraviolet irradiation devices, opening up new fields for semiconductor sensor elements.
- FIG. 1 is a cross-sectional view of a diamond ultraviolet light sensor of the present invention.
- FIG. 2 is a plan view showing an electrode pattern of the diamond ultraviolet light sensor of the present invention.
- FIG. 3 is a graph showing (a) dark current IV characteristics of the diamond ultraviolet light sensor of the present invention, and (b) IV characteristics measured during irradiation with ultraviolet light having a wavelength of 220 nm.
- FIG. 4 Dark current IV characteristics of the diamond ultraviolet light sensor of the present invention after heat treatment at 500 ° C for 1 hour.
- FIG. 5 Photoresponse characteristics of the diamond ultraviolet light sensor of the present invention after heat treatment at 500 ° C for 1 hour.
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Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/720,159 US7768091B2 (en) | 2004-11-25 | 2005-11-22 | Diamond ultraviolet sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004340657A JP4123496B2 (ja) | 2004-11-25 | 2004-11-25 | ダイヤモンド紫外光センサー |
JP2004-340657 | 2004-11-25 |
Publications (1)
Publication Number | Publication Date |
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WO2006057246A1 true WO2006057246A1 (ja) | 2006-06-01 |
Family
ID=36497983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/021451 WO2006057246A1 (ja) | 2004-11-25 | 2005-11-22 | ダイヤモンド紫外光センサー |
Country Status (3)
Country | Link |
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US (1) | US7768091B2 (ja) |
JP (1) | JP4123496B2 (ja) |
WO (1) | WO2006057246A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006087937A1 (ja) * | 2005-02-16 | 2006-08-24 | National Institute For Materials Science | ダイヤモンド半導体整流素子 |
JP5019305B2 (ja) * | 2005-08-29 | 2012-09-05 | 独立行政法人物質・材料研究機構 | ダイヤモンド紫外線センサー |
JP4267652B2 (ja) * | 2006-09-15 | 2009-05-27 | 株式会社東芝 | 放電発光デバイス |
JP5460067B2 (ja) * | 2009-02-09 | 2014-04-02 | 株式会社トクヤマ | 放射線検出装置 |
CN102969805B (zh) * | 2012-12-07 | 2015-02-18 | 四川大学 | 微波能量转换装置 |
CN112164732B (zh) * | 2020-09-15 | 2022-04-05 | 五邑大学 | 一种紫外光电二极管及其制备方法 |
CN114242800B (zh) * | 2021-11-24 | 2023-08-22 | 华南理工大学 | 日盲AlGaN紫外光电探测器及其制备方法 |
CN114621637B (zh) * | 2022-03-21 | 2022-11-04 | 南京林业大学 | 一种纳米纤维素穿插Mxene复合材料、制备方法及其应用 |
Citations (4)
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JPH01246867A (ja) * | 1988-03-28 | 1989-10-02 | Sumitomo Electric Ind Ltd | ショットキー接合 |
JPH0653527A (ja) * | 1992-04-27 | 1994-02-25 | Kobe Steel Ltd | 半導体装置用の整流コンタクト及びその形成方法 |
JPH0750424A (ja) * | 1993-05-14 | 1995-02-21 | Kobe Steel Ltd | ダイヤモンド整流素子 |
JPH07321346A (ja) * | 1994-05-23 | 1995-12-08 | Kobe Steel Ltd | ダイヤモンド半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5927754B2 (ja) | 1981-12-17 | 1984-07-07 | 科学技術庁無機材質研究所長 | ダイヤモンドの合成法 |
DE3784612T2 (de) * | 1986-09-26 | 1993-09-02 | Sumitomo Electric Industries | Thermistor und verfahren zu seiner herstellung. |
EP0445754B1 (en) * | 1990-03-06 | 1996-02-14 | Sumitomo Electric Industries, Ltd. | Method for growing a diamond or c-BN thin film |
JPH1197721A (ja) | 1997-09-25 | 1999-04-09 | Kubota Corp | 光導電型受光素子 |
JP3560462B2 (ja) | 1998-03-04 | 2004-09-02 | 株式会社神戸製鋼所 | ダイヤモンド膜紫外線センサ及びセンサアレイ |
CN100382338C (zh) * | 2002-02-19 | 2008-04-16 | Hoya株式会社 | 场效应晶体管类型发光器件 |
JP4166990B2 (ja) * | 2002-02-22 | 2008-10-15 | 浜松ホトニクス株式会社 | 透過型光電陰極及び電子管 |
-
2004
- 2004-11-25 JP JP2004340657A patent/JP4123496B2/ja not_active Expired - Fee Related
-
2005
- 2005-11-22 US US11/720,159 patent/US7768091B2/en not_active Expired - Fee Related
- 2005-11-22 WO PCT/JP2005/021451 patent/WO2006057246A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01246867A (ja) * | 1988-03-28 | 1989-10-02 | Sumitomo Electric Ind Ltd | ショットキー接合 |
JPH0653527A (ja) * | 1992-04-27 | 1994-02-25 | Kobe Steel Ltd | 半導体装置用の整流コンタクト及びその形成方法 |
JPH0750424A (ja) * | 1993-05-14 | 1995-02-21 | Kobe Steel Ltd | ダイヤモンド整流素子 |
JPH07321346A (ja) * | 1994-05-23 | 1995-12-08 | Kobe Steel Ltd | ダイヤモンド半導体装置 |
Non-Patent Citations (2)
Title |
---|
LIAO M., ALVAREZ J., KOIDE Y.: "Tungsten carbide Schottky contact to diamond toward thermally atable photodiode.", DIAMOND AND RELATED MATERIALS., vol. 14, 8 August 2005 (2005-08-08), pages 2003 - 2006, XP005169004 * |
WHITFIELD M.D. ET AL: "Thin film diamond UV photodetectors: photodiodes compared with photoconductive devices for highly selective wavelengh response.", DIAMOND AND RELATED MATERIALS, vol. 5, no. 6-8, May 1996 (1996-05-01), pages 829 - 834, XP000685019 * |
Also Published As
Publication number | Publication date |
---|---|
US7768091B2 (en) | 2010-08-03 |
US20090134403A1 (en) | 2009-05-28 |
JP2006156464A (ja) | 2006-06-15 |
JP4123496B2 (ja) | 2008-07-23 |
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