WO2006045303A2 - Laser multispectral comprenant plusieurs elements de gain - Google Patents

Laser multispectral comprenant plusieurs elements de gain Download PDF

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Publication number
WO2006045303A2
WO2006045303A2 PCT/DE2005/001958 DE2005001958W WO2006045303A2 WO 2006045303 A2 WO2006045303 A2 WO 2006045303A2 DE 2005001958 W DE2005001958 W DE 2005001958W WO 2006045303 A2 WO2006045303 A2 WO 2006045303A2
Authority
WO
WIPO (PCT)
Prior art keywords
array
feedback
elements
laser
grating
Prior art date
Application number
PCT/DE2005/001958
Other languages
German (de)
English (en)
Other versions
WO2006045303A3 (fr
Inventor
Volker Raab
Original Assignee
Volker Raab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Volker Raab filed Critical Volker Raab
Publication of WO2006045303A2 publication Critical patent/WO2006045303A2/fr
Publication of WO2006045303A3 publication Critical patent/WO2006045303A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1828—Diffraction gratings having means for producing variable diffraction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • Multispectral laser with multiple gain elements Multispectral laser with multiple gain elements
  • the collimation element can be characterized by its axis of symmetry (x 1 ), its optical axis (z 1 ) and the axis which is perpendicular to (x 1 ) and (z 1 ).
  • the axis (x ') is defined as the direction of the invariable cross section in the case of a single cylindrical lens (corresponding to Fig. 2) or also as the direction of the transformation vector in the case of multiple lenses (Fig. 3).
  • the grating reflects the light directly back into the gain material due to Bragg or Littrow conditions.
  • the invention is applied to lasers which themselves have a certain extent along the direction of the array, in particular wide-band lasers, a much more precise wavelength selection takes place since, in the prior art, a multi-wavelength operation is also within a design single laser occurs.
  • Superimposing the individual beams outside the (common) resonator can further reduce the power density in the feedback branch and on the optical components.
  • Dispersive element which together with aperture (16) acts as a wavelength filter

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un résonateur laser simple et compact qui permet de faire fonctionner un ensemble d'éléments de gain individuels, de préférence un laser à semi-conducteur, avec une suite de longueurs d'onde qui peuvent ensuite être simplement superposées spectralement à l'extérieur du résonateur. Le dispositif selon l'invention évite des puissances volumiques élevées sur des composants optiques à l'intérieur du résonateur en renonçant à la superposition, interne au résonateur, des faisceaux individuels. Le résonateur laser commun est très compact et comprend, dans le cas idéal, uniquement trois éléments : le barreau laser (1), une lentille de collimation cylindrique (3, 25) basculant légèrement autour de l'axe optique pour émettre les faisceaux individuels selon différents angles, ainsi qu'un réseau de réinjection (5, 7) en agencement de Littrow (voir figure). La lumière utile (4), un ensemble de faisceaux de longueurs d'onde différentes, peut par exemple être simplement découplée par l'intermédiaire de l'ordre de diffraction zéro du réseau. Il est possible de rendre les faisceaux individuels pratiquement colinéaires au moyen d'une autre lentille (11) ou réseau et d'un élément dispersif adapté (12). Au lieu de faire basculer le collimateur (3), on peut également utiliser un réseau à période variable dans l'espace, par exemple un réseau (de Bragg épais) spécialement conçu, ou un réseau ayant une normale à la surface variant dans l'espace, par exemple un réseau usuel vrillé. Il est possible de découpler la lumière utile (4) par l'intermédiaire de l'ordre de diffraction zéro du réseau (5, 7), par l'intermédiaire de la facette arrière du réseau laser (20), au moyen d'un miroir de sortie supplémentaire ou directement à partir de la facette (21) du laser, cette dernière possibilité valant notamment en cas de fonctionnement hors axe des éléments laser. La superposition des faisceaux est possible au moyen de lentilles, prismes, réseaux et/ou au moyen de miroirs dichroïques.
PCT/DE2005/001958 2004-10-29 2005-10-28 Laser multispectral comprenant plusieurs elements de gain WO2006045303A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004053137A DE102004053137A1 (de) 2004-10-29 2004-10-29 Multispektraler Laser mit mehreren Gainelementen
DE102004053137.4 2004-10-29

Publications (2)

Publication Number Publication Date
WO2006045303A2 true WO2006045303A2 (fr) 2006-05-04
WO2006045303A3 WO2006045303A3 (fr) 2006-10-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/001958 WO2006045303A2 (fr) 2004-10-29 2005-10-28 Laser multispectral comprenant plusieurs elements de gain

Country Status (2)

Country Link
DE (1) DE102004053137A1 (fr)
WO (1) WO2006045303A2 (fr)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007092710A2 (fr) * 2006-02-03 2007-08-16 Hewlett-Packard Development Company, L.P. Module a sources de lumiere
WO2012006346A1 (fr) * 2010-07-07 2012-01-12 Daylight Solutions, Inc. Ensemble source laser de forte puissance à longueurs d'onde multiples à faisceau de sortie de précision
WO2011109763A3 (fr) * 2010-03-05 2012-03-15 TeraDiode, Inc. Système et procédé de combinaison de faisceaux de longueur d'onde par rotation et repositionnement sélectifs
US8306077B2 (en) 2008-04-29 2012-11-06 Daylight Solutions, Inc. High output, mid infrared laser source assembly
US8335413B2 (en) 2010-05-14 2012-12-18 Daylight Solutions, Inc. Optical switch
WO2014087726A1 (fr) * 2012-12-03 2014-06-12 三菱電機株式会社 Appareil laser à semi-conducteurs
US8774244B2 (en) 2009-04-21 2014-07-08 Daylight Solutions, Inc. Thermal pointer
WO2014140112A1 (fr) * 2013-03-15 2014-09-18 Trumpf Laser Gmbh + Co. Kg Dispositif de couplage de longueurs d'onde de rayons laser
US9042688B2 (en) 2011-01-26 2015-05-26 Daylight Solutions, Inc. Multiple port, multiple state optical switch
US9104029B2 (en) 2012-02-22 2015-08-11 TeraDiode, Inc. Multi-wavelength beam combining system and method
US9124065B2 (en) 2010-03-05 2015-09-01 TeraDiode, Inc. System and method for wavelength beam combination on a single laser emitter
WO2016013653A1 (fr) * 2014-07-25 2016-01-28 三菱電機株式会社 Dispositif laser à semi-conducteur
US9256073B2 (en) 2010-03-05 2016-02-09 TeraDiode, Inc. Optical cross-coupling mitigation system for multi-wavelength beam combining systems
US9865985B1 (en) 2012-06-20 2018-01-09 TeraDiode, Inc. Widely tunable infrared source system and method
DE112014004244B4 (de) 2013-10-14 2019-05-29 Trumpf Laser Gmbh Laser hoher Helligkeit mit dichter Wellenlängenmultiplexierung
US10444482B2 (en) 2010-03-05 2019-10-15 TeraDiode, Inc. Optical cross-coupling mitigation systems for wavelength beam combining laser systems
US10606089B2 (en) 2012-02-22 2020-03-31 TeraDiode, Inc. Wavelength beam combining laser systems with micro-optics
CN113615014A (zh) * 2019-03-29 2021-11-05 三菱电机株式会社 半导体激光装置
JPWO2023021675A1 (fr) * 2021-08-20 2023-02-23

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Publication number Priority date Publication date Assignee Title
DE102011003142A1 (de) * 2011-01-26 2012-07-26 Trumpf Laser Gmbh + Co. Kg Diodenlaseranordnung mit dichter Wellenlängenkopplung
DE102012208088A1 (de) 2011-05-25 2012-11-29 LASAIR e.K. Laservorrichtung mit einer Mehrzahl von Laserdioden sowie Verfahren zur Überlagerung von Einzel-Ausgabestrahlen mehrerer Laserdioden zu einem Gesamt-Ausgabestrahl

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WO2001048882A1 (fr) * 1999-12-23 2001-07-05 Thales Multiplexeur en longueurs d'ondes de sources lasers
EP1215784A2 (fr) * 2000-12-15 2002-06-19 The Furukawa Electric Co., Ltd. Dispositif laser à semi-conducteur pour un module laser à semi-conducteur et amplificateur optique
WO2003055018A1 (fr) * 2001-12-12 2003-07-03 Universität Potsdam Procede et dispositif de production de rayonnement laser sur la base de semi-conducteurs
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WO2001048882A1 (fr) * 1999-12-23 2001-07-05 Thales Multiplexeur en longueurs d'ondes de sources lasers
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Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007092710A3 (fr) * 2006-02-03 2007-11-15 Hewlett Packard Development Co Module a sources de lumiere
US7627013B2 (en) 2006-02-03 2009-12-01 Hewlett-Packard Development Company, L.P. Light source module
WO2007092710A2 (fr) * 2006-02-03 2007-08-16 Hewlett-Packard Development Company, L.P. Module a sources de lumiere
US8565275B2 (en) 2008-04-29 2013-10-22 Daylight Solutions, Inc. Multi-wavelength high output laser source assembly with precision output beam
US8879590B2 (en) 2008-04-29 2014-11-04 Daylight Solutions, Inc. High output, mid infrared laser source assembly
US8306077B2 (en) 2008-04-29 2012-11-06 Daylight Solutions, Inc. High output, mid infrared laser source assembly
US8774244B2 (en) 2009-04-21 2014-07-08 Daylight Solutions, Inc. Thermal pointer
US9256073B2 (en) 2010-03-05 2016-02-09 TeraDiode, Inc. Optical cross-coupling mitigation system for multi-wavelength beam combining systems
US10871639B2 (en) 2010-03-05 2020-12-22 TeraDiode, Inc. Optical cross-coupling mitigation systems for wavelength beam combining laser systems
CN102986097A (zh) * 2010-03-05 2013-03-20 泰拉二极管公司 选择性重新定位与旋转波长光束组合系统与方法
JP2013521667A (ja) * 2010-03-05 2013-06-10 テラダイオード，インコーポレーテッド 選択的再配置および回転波長ビーム結合システムならびに方法
WO2011109763A3 (fr) * 2010-03-05 2012-03-15 TeraDiode, Inc. Système et procédé de combinaison de faisceaux de longueur d'onde par rotation et repositionnement sélectifs
US9268142B2 (en) 2010-03-05 2016-02-23 TeraDiode, Inc. Optical cross-coupling mitigation system for multi-wavelength beam combining systems
US10444482B2 (en) 2010-03-05 2019-10-15 TeraDiode, Inc. Optical cross-coupling mitigation systems for wavelength beam combining laser systems
US9124065B2 (en) 2010-03-05 2015-09-01 TeraDiode, Inc. System and method for wavelength beam combination on a single laser emitter
US11604340B2 (en) 2010-03-05 2023-03-14 TeraDiode, Inc. Optical cross-coupling mitigation systems for wavelength beam combining laser systems
US8879875B2 (en) 2010-05-14 2014-11-04 Daylight Solutions, Inc. Optical switch
US8335413B2 (en) 2010-05-14 2012-12-18 Daylight Solutions, Inc. Optical switch
WO2012006346A1 (fr) * 2010-07-07 2012-01-12 Daylight Solutions, Inc. Ensemble source laser de forte puissance à longueurs d'onde multiples à faisceau de sortie de précision
US9042688B2 (en) 2011-01-26 2015-05-26 Daylight Solutions, Inc. Multiple port, multiple state optical switch
US9104029B2 (en) 2012-02-22 2015-08-11 TeraDiode, Inc. Multi-wavelength beam combining system and method
US11391958B2 (en) 2012-02-22 2022-07-19 TeraDiode, Inc. Wavelength beam combining laser systems with micro-optics
US10606089B2 (en) 2012-02-22 2020-03-31 TeraDiode, Inc. Wavelength beam combining laser systems with micro-optics
US11043787B2 (en) 2012-06-20 2021-06-22 TeraDiode, Inc. Widely tunable infrared source system and method
US11658454B2 (en) 2012-06-20 2023-05-23 Panasonic Connect North America, division of Panasonic Corporation of North America Widely tunable infrared source system and method
US10686288B2 (en) 2012-06-20 2020-06-16 TeraDiode, Inc. Widely tunable infrared source system and method
US9865985B1 (en) 2012-06-20 2018-01-09 TeraDiode, Inc. Widely tunable infrared source system and method
US10256595B2 (en) 2012-06-20 2019-04-09 TeraDiode, Inc. Widely tunable infrared source system and method
WO2014087726A1 (fr) * 2012-12-03 2014-06-12 三菱電機株式会社 Appareil laser à semi-conducteurs
US9331457B2 (en) 2012-12-03 2016-05-03 Mitsubishi Electric Corporation Semiconductor laser apparatus
JP5911038B2 (ja) * 2012-12-03 2016-04-27 三菱電機株式会社 半導体レーザ装置
CN104838550A (zh) * 2012-12-03 2015-08-12 三菱电机株式会社 半导体激光器装置
US9690107B2 (en) 2013-03-15 2017-06-27 Trumpf Laser Gmbh Device for wavelength combining of laser beams
CN105122561A (zh) * 2013-03-15 2015-12-02 通快激光有限责任公司 用于激光束的波长耦合的方法
WO2014140112A1 (fr) * 2013-03-15 2014-09-18 Trumpf Laser Gmbh + Co. Kg Dispositif de couplage de longueurs d'onde de rayons laser
DE112014004244B4 (de) 2013-10-14 2019-05-29 Trumpf Laser Gmbh Laser hoher Helligkeit mit dichter Wellenlängenmultiplexierung
WO2016013653A1 (fr) * 2014-07-25 2016-01-28 三菱電機株式会社 Dispositif laser à semi-conducteur
CN113615014A (zh) * 2019-03-29 2021-11-05 三菱电机株式会社 半导体激光装置
CN113615014B (zh) * 2019-03-29 2023-12-08 三菱电机株式会社 半导体激光装置
JPWO2023021675A1 (fr) * 2021-08-20 2023-02-23

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