DE102004053137A1 - Multispektraler Laser mit mehreren Gainelementen - Google Patents

Multispektraler Laser mit mehreren Gainelementen Download PDF

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Publication number
DE102004053137A1
DE102004053137A1 DE102004053137A DE102004053137A DE102004053137A1 DE 102004053137 A1 DE102004053137 A1 DE 102004053137A1 DE 102004053137 A DE102004053137 A DE 102004053137A DE 102004053137 A DE102004053137 A DE 102004053137A DE 102004053137 A1 DE102004053137 A1 DE 102004053137A1
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DE
Germany
Prior art keywords
elements
feedback
array
laser source
source according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102004053137A
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German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE102004053137A priority Critical patent/DE102004053137A1/de
Priority to PCT/DE2005/001958 priority patent/WO2006045303A2/fr
Publication of DE102004053137A1 publication Critical patent/DE102004053137A1/de
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1828—Diffraction gratings having means for producing variable diffraction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
DE102004053137A 2004-10-29 2004-10-29 Multispektraler Laser mit mehreren Gainelementen Ceased DE102004053137A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102004053137A DE102004053137A1 (de) 2004-10-29 2004-10-29 Multispektraler Laser mit mehreren Gainelementen
PCT/DE2005/001958 WO2006045303A2 (fr) 2004-10-29 2005-10-28 Laser multispectral comprenant plusieurs elements de gain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004053137A DE102004053137A1 (de) 2004-10-29 2004-10-29 Multispektraler Laser mit mehreren Gainelementen

Publications (1)

Publication Number Publication Date
DE102004053137A1 true DE102004053137A1 (de) 2006-05-11

Family

ID=36118072

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004053137A Ceased DE102004053137A1 (de) 2004-10-29 2004-10-29 Multispektraler Laser mit mehreren Gainelementen

Country Status (2)

Country Link
DE (1) DE102004053137A1 (fr)
WO (1) WO2006045303A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011003142A1 (de) * 2011-01-26 2012-07-26 Trumpf Laser Gmbh + Co. Kg Diodenlaseranordnung mit dichter Wellenlängenkopplung
DE102012208088A1 (de) 2011-05-25 2012-11-29 LASAIR e.K. Laservorrichtung mit einer Mehrzahl von Laserdioden sowie Verfahren zur Überlagerung von Einzel-Ausgabestrahlen mehrerer Laserdioden zu einem Gesamt-Ausgabestrahl
DE112013005773B4 (de) 2012-12-03 2018-03-01 Mitsubishi Electric Corporation Halbleiterlaservorrichtung

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7627013B2 (en) 2006-02-03 2009-12-01 Hewlett-Packard Development Company, L.P. Light source module
US8306077B2 (en) 2008-04-29 2012-11-06 Daylight Solutions, Inc. High output, mid infrared laser source assembly
US8774244B2 (en) 2009-04-21 2014-07-08 Daylight Solutions, Inc. Thermal pointer
US9778448B2 (en) 2010-03-05 2017-10-03 TeraDiode, Inc. Optical cross-coupling mitigation systems for wavelength beam combining laser systems
US9256073B2 (en) 2010-03-05 2016-02-09 TeraDiode, Inc. Optical cross-coupling mitigation system for multi-wavelength beam combining systems
US9124065B2 (en) 2010-03-05 2015-09-01 TeraDiode, Inc. System and method for wavelength beam combination on a single laser emitter
WO2011109763A2 (fr) * 2010-03-05 2011-09-09 TeraDiode, Inc. Système et procédé de combinaison de faisceaux de longueur d'onde par rotation et repositionnement sélectifs
US8335413B2 (en) 2010-05-14 2012-12-18 Daylight Solutions, Inc. Optical switch
WO2012006346A1 (fr) * 2010-07-07 2012-01-12 Daylight Solutions, Inc. Ensemble source laser de forte puissance à longueurs d'onde multiples à faisceau de sortie de précision
US9042688B2 (en) 2011-01-26 2015-05-26 Daylight Solutions, Inc. Multiple port, multiple state optical switch
US9104029B2 (en) 2012-02-22 2015-08-11 TeraDiode, Inc. Multi-wavelength beam combining system and method
US9823480B2 (en) 2012-02-22 2017-11-21 TeraDiode, Inc. Wavelength beam combining laser systems with micro-optics
US9865985B1 (en) 2012-06-20 2018-01-09 TeraDiode, Inc. Widely tunable infrared source system and method
US9690107B2 (en) 2013-03-15 2017-06-27 Trumpf Laser Gmbh Device for wavelength combining of laser beams
US9391713B2 (en) 2013-10-14 2016-07-12 Trumpf Laser Gmbh High brightness dense wavelength multiplexing laser
WO2016013653A1 (fr) * 2014-07-25 2016-01-28 三菱電機株式会社 Dispositif laser à semi-conducteur
US20220123523A1 (en) * 2019-03-29 2022-04-21 Mitsubishi Electric Corporation Semiconductor laser device
JPWO2023021675A1 (fr) * 2021-08-20 2023-02-23

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6192062B1 (en) * 1998-09-08 2001-02-20 Massachusetts Institute Of Technology Beam combining of diode laser array elements for high brightness and power
WO2002084824A1 (fr) * 2001-04-09 2002-10-24 Chromaplex, Inc. Laser modulable a cavite externe, semi-conducteur et longueurs d'onde multiples
US20040095983A1 (en) * 2002-11-19 2004-05-20 Whitley Richard M. Optical system for improving the brightness of a stack of lensed diode lasers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574007A (en) * 1980-06-07 1982-01-09 Takumi Tomijima Multiple wavelength light communication system
JPH0638595B2 (ja) * 1985-12-17 1994-05-18 松下電器産業株式会社 波長多重光通信用光源
US5841797A (en) * 1994-06-28 1998-11-24 Ventrudo; Brian F. Apparatus for stabilizing multiple laser sources and their application
JP3792331B2 (ja) * 1997-01-27 2006-07-05 富士通株式会社 光半導体装置の製造方法、回折格子の形成方法
FR2803116B1 (fr) * 1999-12-23 2002-03-22 Thomson Csf Multiplexeur en longueurs d'ondes de sources lasers
US6782028B2 (en) * 2000-12-15 2004-08-24 The Furukawa Electric Co., Ltd. Semiconductor laser device for use in a semiconductor laser module and an optical amplifier
ES2268029T3 (es) * 2001-04-07 2007-03-16 HENTZE-LISSOTSCHENKO PATENTVERWALTUNGS GMBH & CO. KG Disposicion para corregir una radiacion laser saliente de una fuente de luz laser y procedimiento para fabricar dicha disposicion.
US7106920B2 (en) * 2001-11-13 2006-09-12 Zhongshan Liu Laser array for generating stable multi-wavelength laser outputs
DE10161076A1 (de) * 2001-12-12 2003-09-11 Univ Potsdam Verfahren und Vorrichtung zur Erzeugung von Licht guter Strahlqualität aus Halbleiter-Laserchips

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6192062B1 (en) * 1998-09-08 2001-02-20 Massachusetts Institute Of Technology Beam combining of diode laser array elements for high brightness and power
WO2002084824A1 (fr) * 2001-04-09 2002-10-24 Chromaplex, Inc. Laser modulable a cavite externe, semi-conducteur et longueurs d'onde multiples
US20040095983A1 (en) * 2002-11-19 2004-05-20 Whitley Richard M. Optical system for improving the brightness of a stack of lensed diode lasers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011003142A1 (de) * 2011-01-26 2012-07-26 Trumpf Laser Gmbh + Co. Kg Diodenlaseranordnung mit dichter Wellenlängenkopplung
DE102012208088A1 (de) 2011-05-25 2012-11-29 LASAIR e.K. Laservorrichtung mit einer Mehrzahl von Laserdioden sowie Verfahren zur Überlagerung von Einzel-Ausgabestrahlen mehrerer Laserdioden zu einem Gesamt-Ausgabestrahl
DE112013005773B4 (de) 2012-12-03 2018-03-01 Mitsubishi Electric Corporation Halbleiterlaservorrichtung
DE112013007759B3 (de) * 2012-12-03 2018-05-30 Mitsubishi Electric Corporation Halbleiterlaservorrichtung

Also Published As

Publication number Publication date
WO2006045303A2 (fr) 2006-05-04
WO2006045303A3 (fr) 2006-10-26

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