WO2006045303A3 - Laser multispectral comprenant plusieurs elements de gain - Google Patents

Laser multispectral comprenant plusieurs elements de gain Download PDF

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Publication number
WO2006045303A3
WO2006045303A3 PCT/DE2005/001958 DE2005001958W WO2006045303A3 WO 2006045303 A3 WO2006045303 A3 WO 2006045303A3 DE 2005001958 W DE2005001958 W DE 2005001958W WO 2006045303 A3 WO2006045303 A3 WO 2006045303A3
Authority
WO
WIPO (PCT)
Prior art keywords
grating
laser
resonator
array
beams
Prior art date
Application number
PCT/DE2005/001958
Other languages
German (de)
English (en)
Other versions
WO2006045303A2 (fr
Inventor
Volker Raab
Original Assignee
Volker Raab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Volker Raab filed Critical Volker Raab
Publication of WO2006045303A2 publication Critical patent/WO2006045303A2/fr
Publication of WO2006045303A3 publication Critical patent/WO2006045303A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1828—Diffraction gratings having means for producing variable diffraction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un résonateur laser simple et compact qui permet de faire fonctionner un ensemble d'éléments de gain individuels, de préférence un laser à semi-conducteur, avec une suite de longueurs d'onde qui peuvent ensuite être simplement superposées spectralement à l'extérieur du résonateur. Le dispositif selon l'invention évite des puissances volumiques élevées sur des composants optiques à l'intérieur du résonateur en renonçant à la superposition, interne au résonateur, des faisceaux individuels. Le résonateur laser commun est très compact et comprend, dans le cas idéal, uniquement trois éléments : le barreau laser (1), une lentille de collimation cylindrique (3, 25) basculant légèrement autour de l'axe optique pour émettre les faisceaux individuels selon différents angles, ainsi qu'un réseau de réinjection (5, 7) en agencement de Littrow (voir figure). La lumière utile (4), un ensemble de faisceaux de longueurs d'onde différentes, peut par exemple être simplement découplée par l'intermédiaire de l'ordre de diffraction zéro du réseau. Il est possible de rendre les faisceaux individuels pratiquement colinéaires au moyen d'une autre lentille (11) ou réseau et d'un élément dispersif adapté (12). Au lieu de faire basculer le collimateur (3), on peut également utiliser un réseau à période variable dans l'espace, par exemple un réseau (de Bragg épais) spécialement conçu, ou un réseau ayant une normale à la surface variant dans l'espace, par exemple un réseau usuel vrillé. Il est possible de découpler la lumière utile (4) par l'intermédiaire de l'ordre de diffraction zéro du réseau (5, 7), par l'intermédiaire de la facette arrière du réseau laser (20), au moyen d'un miroir de sortie supplémentaire ou directement à partir de la facette (21) du laser, cette dernière possibilité valant notamment en cas de fonctionnement hors axe des éléments laser. La superposition des faisceaux est possible au moyen de lentilles, prismes, réseaux et/ou au moyen de miroirs dichroïques.
PCT/DE2005/001958 2004-10-29 2005-10-28 Laser multispectral comprenant plusieurs elements de gain WO2006045303A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004053137.4 2004-10-29
DE102004053137A DE102004053137A1 (de) 2004-10-29 2004-10-29 Multispektraler Laser mit mehreren Gainelementen

Publications (2)

Publication Number Publication Date
WO2006045303A2 WO2006045303A2 (fr) 2006-05-04
WO2006045303A3 true WO2006045303A3 (fr) 2006-10-26

Family

ID=36118072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/001958 WO2006045303A2 (fr) 2004-10-29 2005-10-28 Laser multispectral comprenant plusieurs elements de gain

Country Status (2)

Country Link
DE (1) DE102004053137A1 (fr)
WO (1) WO2006045303A2 (fr)

Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
US7627013B2 (en) * 2006-02-03 2009-12-01 Hewlett-Packard Development Company, L.P. Light source module
US8306077B2 (en) 2008-04-29 2012-11-06 Daylight Solutions, Inc. High output, mid infrared laser source assembly
US8774244B2 (en) 2009-04-21 2014-07-08 Daylight Solutions, Inc. Thermal pointer
CN102986097B (zh) * 2010-03-05 2016-03-09 泰拉二极管公司 选择性重新定位与旋转波长光束组合系统与方法
US9124065B2 (en) 2010-03-05 2015-09-01 TeraDiode, Inc. System and method for wavelength beam combination on a single laser emitter
US9778448B2 (en) 2010-03-05 2017-10-03 TeraDiode, Inc. Optical cross-coupling mitigation systems for wavelength beam combining laser systems
US9256073B2 (en) 2010-03-05 2016-02-09 TeraDiode, Inc. Optical cross-coupling mitigation system for multi-wavelength beam combining systems
US8335413B2 (en) 2010-05-14 2012-12-18 Daylight Solutions, Inc. Optical switch
WO2012006346A1 (fr) * 2010-07-07 2012-01-12 Daylight Solutions, Inc. Ensemble source laser de forte puissance à longueurs d'onde multiples à faisceau de sortie de précision
DE102011003142A1 (de) * 2011-01-26 2012-07-26 Trumpf Laser Gmbh + Co. Kg Diodenlaseranordnung mit dichter Wellenlängenkopplung
US9042688B2 (en) 2011-01-26 2015-05-26 Daylight Solutions, Inc. Multiple port, multiple state optical switch
DE102012208088A1 (de) 2011-05-25 2012-11-29 LASAIR e.K. Laservorrichtung mit einer Mehrzahl von Laserdioden sowie Verfahren zur Überlagerung von Einzel-Ausgabestrahlen mehrerer Laserdioden zu einem Gesamt-Ausgabestrahl
US9823480B2 (en) 2012-02-22 2017-11-21 TeraDiode, Inc. Wavelength beam combining laser systems with micro-optics
US9104029B2 (en) 2012-02-22 2015-08-11 TeraDiode, Inc. Multi-wavelength beam combining system and method
US9865985B1 (en) 2012-06-20 2018-01-09 TeraDiode, Inc. Widely tunable infrared source system and method
CN104838550B (zh) * 2012-12-03 2017-09-15 三菱电机株式会社 半导体激光器装置
US9690107B2 (en) * 2013-03-15 2017-06-27 Trumpf Laser Gmbh Device for wavelength combining of laser beams
US9391713B2 (en) 2013-10-14 2016-07-12 Trumpf Laser Gmbh High brightness dense wavelength multiplexing laser
US20170207605A1 (en) * 2014-07-25 2017-07-20 Mitsubishi Electric Corporation Semiconductor laser device
US20220123523A1 (en) * 2019-03-29 2022-04-21 Mitsubishi Electric Corporation Semiconductor laser device
JPWO2023021675A1 (fr) * 2021-08-20 2023-02-23

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EP1215784A2 (fr) * 2000-12-15 2002-06-19 The Furukawa Electric Co., Ltd. Dispositif laser à semi-conducteur pour un module laser à semi-conducteur et amplificateur optique
WO2003055018A1 (fr) * 2001-12-12 2003-07-03 Universität Potsdam Procede et dispositif de production de rayonnement laser sur la base de semi-conducteurs
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WO2001048882A1 (fr) * 1999-12-23 2001-07-05 Thales Multiplexeur en longueurs d'ondes de sources lasers
EP1215784A2 (fr) * 2000-12-15 2002-06-19 The Furukawa Electric Co., Ltd. Dispositif laser à semi-conducteur pour un module laser à semi-conducteur et amplificateur optique
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WO2003055018A1 (fr) * 2001-12-12 2003-07-03 Universität Potsdam Procede et dispositif de production de rayonnement laser sur la base de semi-conducteurs

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DE102004053137A1 (de) 2006-05-11
WO2006045303A2 (fr) 2006-05-04

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