WO2006043125A1 - Generateur de gaz fluor - Google Patents

Generateur de gaz fluor Download PDF

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Publication number
WO2006043125A1
WO2006043125A1 PCT/IB2004/003459 IB2004003459W WO2006043125A1 WO 2006043125 A1 WO2006043125 A1 WO 2006043125A1 IB 2004003459 W IB2004003459 W IB 2004003459W WO 2006043125 A1 WO2006043125 A1 WO 2006043125A1
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WO
WIPO (PCT)
Prior art keywords
gas
conduit
fluorine
valve
fluorine gas
Prior art date
Application number
PCT/IB2004/003459
Other languages
English (en)
Inventor
Fumihiro Honma
Jun Sonobe
Original Assignee
L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude filed Critical L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude
Priority to PCT/IB2004/003459 priority Critical patent/WO2006043125A1/fr
Publication of WO2006043125A1 publication Critical patent/WO2006043125A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B15/00—Operating or servicing cells
    • C25B15/02—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/24—Halogens or compounds thereof
    • C25B1/245—Fluorine; Compounds thereof

Definitions

  • This invention relates to fluorine gas generators and more particularly relates to a fluorine gas generator that is disposed in the gas feed system of a semiconductor processing system.
  • semiconductor processing refers to the various processes that are carried out in order to fabricate a semiconductor device — and/or a structure (comprising, e.g., interconnects, electrodes) that connects to a semiconductor device — on a substrate through the formation of, e.g., semiconductor, dielectric, and conductor layers in desired patterns on the substrate.
  • This substrate can be exemplified by semiconductor wafers and LCD substrates.
  • Various semiconductor processes, such as film formation, etching, and diffusion, are executed on substrates such as semiconductor wafers and LCD substrates during the fabrication of semiconductor devices.
  • fluorine (F)- type gases as process gases for various applications, such as the etching of silicon or silicon oxide films and for cleaning the interior of processing compartments.
  • fluorine gas has been receiving attention as a novel etching gas and cleaning gas, the production of fluorine at the site of semiconductor device fabrication is not generally practiced because issues with safety and reliability have not been completely resolved.
  • Patent Reference 1 discloses a semiconductor processing system in which fluorine is produced onsite and is fed to the processing compartment as a cleaning gas. Fluorine is produced as a cleaning gas in the system disclosed in this reference by the electrolysis of hydrogen fluoride (HF) by a gas generator.
  • HF hydrogen fluoride
  • the cleaning gas is fed through a feed conduit that connects the gas generator to the processing compartment.
  • a refrigerated column is provided in the feed conduit in order to remove the hydrogen fluoride (HF) in the cleaning gas by cryocondensation.
  • HF hydrogen fluoride
  • Patent Reference 2 an apparatus that produces fluorine gas in a gas production plant is disclosed in Patent Reference 2.
  • the fluorine gas generator disclosed in this reference has an electrolytic cell that holds an electrolytic bath comprising molten salt that contains potassium fluoride and hydrogen fluoride.
  • the hydrogen fluoride in the electrolytic bath is subjected to electrolysis with the production of product gas whose main component is fluorine gas on the anode side and the production of by-product gas whose main component is hydrogen gas on the cathode side.
  • the feed conduit for product gas withdrawal is provided with, inter alia, a solenoid valve for liquid level control, a blank column, an absorption column, and a filter column in the given sequence considered from the upstream side.
  • the exhaust conduit for exhaust of the by-product gas is also provided with, inter alia, a solenoid valve for liquid level control, a blank column, and an absorption column (a filter column is not present) in the given sequence considered from the upstream side.
  • the blank column is used to remove electrolytic bath spray that is present in the product gas.
  • the absorption column holds sodium fluoride (NaF) in order to remove hydrogen fluoride (HF) present in the product gas. Particles present in the product gas are removed by the filter column.
  • the object of this invention is to provide a fluorine gas generator that is capable of very safe and highly reliable operations even during long-term use.
  • a particular object of this invention is to provide an onsite and on-demand fluorine gas generator.
  • onsite means that the fluorine gas generator is assembled or incorporated into the particular main processing equipment, for example, the main processing equipment of a semiconductor processing system.
  • On-demand means that the gas can be supplied with the required component adjustments and at a timing that are responsive to the demands of the main processing equipment.
  • a first aspect of the present invention is a fluorine gas generator that is characteristically provided with an electrolytic cell that effects electrolysis of hydrogen fluoride in an electrolytic bath comprising molten salt that contains potassium fluoride and hydrogen fluoride, thereby producing product gas whose main component is fluorine gas in a first gas-phase region on the anode side and producing by-product gas whose main component is hydrogen gas in a second gas-phase region on the cathode side, a first conduit that withdraws the product gas from the first gas-phase region, a second conduit that withdraws the by-product gas from the second gas-phase region, a first valve that is disposed in the first conduit and that controls the flow rate of the gas passing through the first conduit, a first control member that adjusts the aperture of the first valve based on information that directly or indirectly indicates the state within the electrolytic cell, and a first cartridge that is disposed in the first conduit upstream from the first valve and that holds sodium fluoride pellets that adsorb the hydrogen fluoride and mist of the
  • the fluorine gas generator according to the first aspect is characteristically also provided with a second cartridge that is disposed in the second conduit and that holds adsorbent that adsorbs mist of the aforementioned molten salt.
  • the fluorine gas generator according to the second aspect is characterized in that the adsorbent is provided with sodium fluoride pellets.
  • the fluorine gas generator according to the second or third aspect is characteristically also provided with a second valve that is disposed in the second conduit and that controls the flow rate of the gas passing through the second conduit and a second control member that adjusts the aperture of the second valve based on information that directly or indirectly indicates the state within the electrolytic cell, wherein the second cartridge is disposed upstream from the second valve.
  • the fluorine gas generator according to the fourth aspect is characteristically also provided with a first pressure gauge that measures the pressure in the first gas-phase region and a second pressure gauge that measures the pressure in the second gas-phase region, wherein the aforesaid first and second control members adjust, respectively, the apertures of the first and second valves based on the measurement results from the first and second pressure gauges so as to maintain the pressures in the first and second gas-phase regions at substantially equal set values.
  • the fluorine gas generator according to any of the first through fifth aspects is characteristically also provided with a temperature regulator that regulates the temperature of the first cartridge.
  • a temperature regulator that regulates the temperature of the first cartridge.
  • the pressure at both electrodes in the electrolytic cell can be subjected to a very discriminating and highly responsive control by continuously monitoring the pressures at the anode and cathode and subjecting the pressures to fine control independently of the flow rate (using, for example, a flow rate controller that also incorporates a piezo valve) (Japanese Patent Application 2002-202734). Since this type of flow rate control valve has an extremely small gas flow path diameter that poses a risk of blockage by contaminants (for example, microparticles and dust) entrained by the gas, the flow rate control valves are protected by the installation of upstream filters on both the anode and cathode sides.
  • control of the electrolytic bath was excellent during the initial period of electrolysis, but a new problem was created in that continuing operation was made impossible due to the rapid development of blockage in regions within the conduits on both the anode and cathode sides where pressure differences were created (for example, the filters).
  • the cause of this was found to be a mist of molten salt entrained in the respective gases produced by the electrolytic cell: this mist deposited on the filter surfaces and plugged the filter.
  • NaF sodium fluoride
  • HF hydrogen fluoride
  • the present inventors also conducted various experiments with regard to the fluorine gas adsorption capacity of NaF and during these experiments obtaining additional findings with regard to the functionality of NaF as described below.
  • the fluorine gas adsorption capacity of NaF was investigated in some experiments by placing a cartridge filled with NaF pellets in the product gas feed conduit of a fluorine gas generator.
  • the NaF cartridge could also remove the molten salt-derived potassium fluoride (KF) component (main component of the molten salt mist) down to the sub-ppb level.
  • KF molten salt-derived potassium fluoride
  • other components entrained in the molten salt mist were also almost completely absent downstream from the NaF cartridge.
  • Metal analysis was carried out in these experiments by bubbling the product gas directly into a PFA container filled with ultrapure water in order to collect the metal impurities and analyzing the resulting aqueous hydrogen fluoride with an inductively coupled plasma-mass spectrometric (ICP-MS) instrument.
  • ICP-MS inductively coupled plasma-mass spectrometric
  • a pressure gauge 116 and a piezo valve 118 were connected to the cathode of a fluorine gas generator through parallel and switchable first and second conduits 112, 114.
  • the piezo valve 118 was set up to be aperture controllable based on the pressure at the cathode of the fluorine gas generator.
  • a guard filter 124 and NaF pellet-filled cartridge 122 were placed in the first conduit 112, while only a guard filter 126 was placed in the second conduit 114.
  • the first and second conduits 112, 114 were used in alternation and the time required until the occurrence of blockage by mist was measured for each guard filter 124, 126.
  • Blockage was considered to have occurred when the following condition persisted for at least 1 minute: pressure at the pressure gauge 116 ⁇ -30 kPa while the aperture of the piezo valve 118 was at least 100%.
  • the piezo valve 118 was set so as to maintain a valve aperture of about 60% under normal conditions.
  • the aperture of the piezo valve 118 increased when the pressure at the cathode rose due to blockage upstream from the valve: the valve aperture was made larger in an attempt to provide a larger by-product gas flow.
  • V1b were closed and the valves V2a, V2b were opened.
  • the integrated quantity of electrolysis (Ah) prior to starting was recorded.
  • the NaF cartridge 122 was heated to 200 0 C, the valves Via, V1b were opened, and the valves V2a, V2b were closed. (6) The integrated quantity of electrolysis (Ah) prior to starting was recorded.
  • Fluorine electrolysis was halted when the blockage occurrence condition provided above was satisfied and the integrated quantity of electrolysis for fluorine generation was recorded at that point.
  • the mist blockage time of the guard filters was extended by the use of the NaF cartridge 122 by as much as 5-times. Since the conduit diameter of the NaF cartridge 122 is larger than that of ordinary piping, the accompanying reduction in flow rate may have contributed to the improved life.
  • FIG. 1 contains a schematic drawing that illustrates a semiconductor processing system that incorporates a fluorine gas generator according to an embodiment of the present invention.
  • This semiconductor processing system contains a semiconductor processing apparatus 10 that implements a process, such as film formation, etching, or diffusion, on a substrate such as a semiconductor wafer or LCD substrate.
  • the semiconductor processing apparatus 10 is provided with a processing compartment 12 for holding the substrate and for implementing semiconductor processing.
  • a mounting platform 14 (support member) that also functions as a lower electrode is disposed in the processing compartment 12 in order to mount the substrate.
  • An upper electrode 16 is disposed within the processing compartment 12 facing the mounting platform 14.
  • a high-frequency (RF) field for converting the process gas into a plasma is formed in the processing compartment 12 by the application between the two electrodes 14, 16 of RF power from an RF power source 15.
  • the lower region of the processing compartment 12 is connected to an exhaust system 18 for exhausting the interior thereof and establishing a vacuum therein.
  • a gas feed system 20 is also connected at the top of the processing compartment 12 in order to supply process gas.
  • FIG 2 contains a schematic diagram that shows a modified semiconductor processing apparatus 1Ox that can be used in combination with the gas feed system 20 illustrated in Figure 1.
  • the semiconductor processing apparatus 1Ox is provided with a processing compartment 12 for holding the substrate and for implementing semiconductor processing.
  • a mounting platform 14 (support member) is disposed in the processing compartment 12 in order to mount the substrate.
  • the lower region of the processing compartment 12 is connected to an exhaust system 18 for exhausting the interior thereof and establishing a vacuum therein.
  • the top of the processing compartment 12 is connected to a remote plasma compartment 13 that can generate a plasma.
  • a coil antenna 17 is wrapped about the circumference of the remote plasma compartment 13.
  • An induction field for converting the process gas into plasma is formed within the remote plasma compartment 13 by the application of RF power from a high-frequency (RF) power source 15 to the coil antenna 17.
  • RF high-frequency
  • a gas feed system 20 is also connected at the top of the remote plasma compartment 13 in order to supply process gas.
  • the fluorine gas generator according to this embodiment of the present invention can also be used with semiconductor processing tools that do not employ a plasma, for example, it can be used to feed cleaning gas to a thermal CVD tool.
  • a flow management section 22 is disposed in the gas feed system 20; this flow management section 22 is provided in order to selectively switch between or among gases, for example, a process gas for semiconductor processing and a process gas for cleaning the interior of the processing compartment 12, and in order to feed gas at a specified flow rate.
  • the flow management section 22 is connected to a gas storage section 24 that has a plurality of gas sources that store various active and inert gases.
  • the flow management section 22 is also connected to a gas generation section 26 that generates fluorine gas-type process gases by reaction processes.
  • a fluorine gas generator 30 according to this embodiment of the present invention is detachably connected to the flow management section 22 and the gas generation section 26. That is, the generator 30 either directly feeds fluorine gas to the flow management section 22 or is used to feed precursor fluorine gas to the gas generation section 26 (switching valve not shown).
  • the generator 30 has a gastight electrolytic cell 32 that holds an electrolytic bath comprising molten salt that contains hydrogen fluoride.
  • the molten salt comprises a mixture of potassium fluoride (KF) and hydrogen fluoride (HF) (KF/2HF) or Fremy's salt (KF/2HF + additive).
  • the electrolytic cell 32 is partitioned into an anode compartment 34 and a cathode compartment 36 by a partition plate 35 that extends into the molten salt from the top.
  • a carbon electrode (anode) 42 and a nickel electrode (cathode) 44 are immersed in the molten salt, respectively, in an anode compartment 34 and a cathode compartment 36.
  • There are attached to the electrolytic cell 32 a power source 38 to feed current across the anode 42 and cathode 44 and a current integrator 40 that integrates the current input.
  • Hydrogen fluoride gas is admixed (for example, at 5%) in both the product gas and by-product gas in correspondence to the vapor pressure of the hydrogen fluoride gas in the molten salt starting material.
  • a first conduit 52 is connected to the anode compartment 34 in order to withdraw the product gas and transport it to the flow management section 22 and gas generation section 26 of the gas feed system 20.
  • the following, inter alia, are disposed in the first conduit 52 in the given sequence considered from the upstream side: an adsorption cartridge 54, a first flow rate control valve 56, a mini-buffer tank 58, a compressor (suction means) 62, and a main buffer tank 64.
  • the product gas generated in the anode compartment 34 is forcibly suctioned from the anode compartment 34 due to suction of the first conduit 52 by the compressor 62 and is stored in the main buffer tank 64.
  • Reference symbol 66 in Figure 1 refers to a line filter.
  • the pressure within the main buffer tank 64 is continuously measured by a pressure gauge 65 disposed on the tank 64.
  • the result of this measurement is transmitted to a control element 39 that is attached to the power source 38.
  • This control element 39 controls the current feed to the electrolytic cell 32 by switching the power source 38 on and off based on the transmitted measurement result. Specifically, when the pressure in the tank 64 has fallen to some specified pressure, the power source 38 is switched on and fluorine gas generation is begun; when the pressure has risen to some specified pressure, the power source 38 is switched off and fluorine gas generation is halted. This enables electrolysis to be stopped without causing a difference in the molten salt level between the anode compartment 34 and cathode compartment 36 in the electrolytic cell 32.
  • the pressure in the tank 64 is set at, for example, atmospheric pressure to atmospheric pressure + 0.18 MPa.
  • a second conduit 72 is connected to the cathode compartment 36 in order to withdraw the by-product gas.
  • the second conduit 72 is detachably connected to, for example, a conduit in the exhaust system (suction means) 79 of the semiconductor fabrication plant.
  • the following, inter alia, are disposed in the second conduit 72 in the given sequence considered from the upstream side: an adsorption cartridge 74, a second flow rate control valve 76, and a detoxification section 78.
  • the by-product gas generated at the cathode compartment 36 is forcibly suctioned from the cathode compartment 36 due to the suctioning of the second conduit 72 by the exhaust system 79 and is sent into the exhaust system 79 after passage through the detoxification section 78.
  • the pressure balance between the anode compartment 34 and the cathode compartment 36 is prone to disturbance during electrolysis by a variety of factors as described above, leading to fluctuations in the liquid level within the electrolytic cell 32.
  • fluctuations in the liquid level within the electrolytic cell 32 are also prone to occur even when electrolysis is not in progress, mainly directly after a gas switching step such as, for example, a nitrogen purge of the interior of the electrolytic cell 32 or a nitrogen purge after completion of feed of the starting hydrogen fluoride gas. These cause a deterioration in the safety and reliability of the fluorine gas generator.
  • the pressures in the gas-phase region of both the anode compartment 34 and the cathode compartment 36 are continuously measured, respectively, by the first and second pressure gauges 46, 48 in the fluorine gas generator shown in Figure 1.
  • These measurement results are transmitted, respectively, to first and second control members 57, 77 attached to the first and second flow rate control valves 56, 76.
  • the first and second control members 57, 77 adjust the apertures of the first and second flow rate control valves 56, 76 based on the transmitted measurement results so as to maintain the pressures in the gas- phase regions of the anode compartment 34 and the cathode compartment 36 at first and second set values that are substantially equal to one another. That is, the first and second flow rate control valves 56, 76 are subjected to continuous aperture adjustment under control by the respectively attached first and second control members 57, 77.
  • a uniform state is maintained for the molten salt levels in the anode compartment 34 and cathode compartment 36 due to this independent and continuous measurement and control of the pressures in the anode compartment 34 and cathode compartment 36.
  • this configuration protects the electrolytic cell 32 from undesirable influences arising from fluctuations in the status of fluorine generation, the status of the first conduit 52, the status of the second conduit 72, the operating status of the compressor 62, the operating status of the exhaust system 79 in the semiconductor fabrication plant, and other elements of the operating environment. This enables damage to the expensive electrodes, etc., for example, the anode effect, to be avoided before anything happens and enables processing to proceed safely and without unexpected stoppages in electrolysis.
  • the first and second set values for the gas-phase regions of the anode compartment 34 and the cathode compartment 36 are desirably atmospheric pressure to 820 torr and more desirably atmospheric pressure to 770 torr.
  • the apertures of the first and second flow rate control valves 56, 76 must be capable of a very response and continuous adjustment.
  • piezo valves are desirably used as the first and second flow rate control valves 56, 76.
  • hydrogen fluoride is admixed at a few percent (for example, 5%) in the product gas and by-product gas.
  • NaF sodium fluoride
  • the cartridges 54, 74 are held within the cartridges 54, 74 as the adsorbent that adsorptively captures the hydrogen fluoride and molten salt mist.
  • the NaF pellets are produced with a shape and in dimensions suitable for the elaboration of pellet-to-pellet gaps that form gas flow paths.
  • temperature adjustment jackets (heaters) 55, 75 are respectively disposed on the circumferences of the cartridges 54, 74 for purposes of temperature adjustment. Based on the criterion of optimal hydrogen fluoride adsorption, the cartridges 54, 74 are maintained at room temperature to 300 0 C and desirably at 80-120 0 C.
  • the hydrogen fluoride need not necessarily be removed from the by-product gas.
  • the cartridge 74 disposed in the second conduit 72 carrying the by-product gas need only be capable of removing the molten salt mist in order to prevent blockage of the conduit system.
  • the adsorbent filled in the adsorption cartridge 74 for the by-product gas can be an inorganic fluorine compound such as calcium fluoride or potassium fluoride rather than sodium fluoride.
  • the aperture of the first and second flow rate control valves 56, 76 is adjusted using the pressures within the anode compartment 34 and the cathode compartment 36 as the information that directly or indirectly indicates the state within the electrolytic cell 32.
  • this invention is similarly applicable to an apparatus that adjusts the aperture of the flow rate control valves based on other information that directly or indirectly indicates the state within the electrolytic cell 32, for example, based on the liquid level within the electrolytic cell 32.
  • the fluorine gas generator 30 is detachably incorporated in the semiconductor processing system, but it may be permanently installed in the semiconductor processing system.
  • elements situated in the semiconductor fabrication plant may also be used for some of the elements in the fluorine gas generator 30, for example, the compressor 62, main buffer tank 64, detoxification section 78, etc. While the fluorine gas is fed either to the flow management section 22 or the gas generation section 26, this gas may be fed directly to the processing compartment 12 separately from other process gases.
  • the gas generation section 26 can also be set up to generate other fluorine-type process gases that are not interhalogen fluorine compound gases.
  • the present invention provides a fluorine gas generator that is capable of very stable and highly reliable operation even during long-term use.
  • Figure 1 contains a schematic drawing that illustrates a semiconductor processing system that incorporates a fluorine gas generator according to an embodiment of the present invention.
  • Figure 2 contains a schematic drawing that illustrates a modified semiconductor processing apparatus that is used in combination with the gas feed system illustrated in Figure 1.
  • Figure 3 contains a schematic drawing that illustrates an experimental apparatus for confirming the capacity of NaF cartridges to remove molten salt mist.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)

Abstract

La présente invention concerne un générateur de gaz fluor capable de fonctionner de manière très sûre et hautement fiable, même en cas d'utilisation prolongée. Un générateur de gaz fluor (30) comprend une cellule électrolytique (32) qui génère un produit gazeux dont le composant principal est le gaz fluor dans une première zone en phase gazeuse du côté de l'anode et qui génère un sous-produit gazeux dont le composant principal est l'hydrogène dans une seconde zone en phase gazeuse du côté de la cathode. Un premier et un second conduit (52, 72) sont utilisés pour retirer les produits et les sous-produits gazeux. Une première vanne de commande de débit de gaz (56) est placée dans le premier conduit (52), l'ouverture de cette vanne étant ajustée sur la base d'informations qui indiquent directement ou indirectement l'état à l'intérieur de la cellule électrolytique (32). Une première cartouche (54) est disposée dans le premier conduit (52) en amont de la première vanne (56). La première cartouche (54) contient des pastilles de fluorure de sodium qui adsorbent le fluorure d'hydrogène et un brouillard de sel fondu mélangé dans le produit gazeux.
PCT/IB2004/003459 2004-10-20 2004-10-20 Generateur de gaz fluor WO2006043125A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/IB2004/003459 WO2006043125A1 (fr) 2004-10-20 2004-10-20 Generateur de gaz fluor

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Application Number Priority Date Filing Date Title
PCT/IB2004/003459 WO2006043125A1 (fr) 2004-10-20 2004-10-20 Generateur de gaz fluor

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WO2006043125A1 true WO2006043125A1 (fr) 2006-04-27

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011117234A2 (fr) 2010-03-26 2011-09-29 Solvay Sa Procédé d'approvisionnement en fluor
WO2011124642A2 (fr) * 2010-04-08 2011-10-13 Solvay Sa Procédé de fabrication de dispositifs électroniques avec du fluor épuré
WO2012016997A1 (fr) * 2010-08-05 2012-02-09 Solvay Sa Procédé de purification du fluor
US20140360884A1 (en) * 2009-06-12 2014-12-11 Central Glass Company, Limited Fluorine Gas Generating Device
EP3848623A4 (fr) * 2018-09-03 2021-11-17 Showa Denko K.K. Procédé et équipement permettant de fournir un gaz contenant du fluor gazeux
CN113874555A (zh) * 2019-12-27 2021-12-31 昭和电工株式会社 氟气的制造方法及氟气制造装置
CN113906166A (zh) * 2019-12-27 2022-01-07 昭和电工株式会社 氟气制造装置及光散射检测器

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Publication number Priority date Publication date Assignee Title
EP1283280A1 (fr) * 2000-04-07 2003-02-12 Toyo Tanso Co., Ltd. Appareil pour la production de fluor gazeux
WO2004007802A2 (fr) * 2002-07-11 2004-01-22 L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Appareil de production de gaz fluore
US20040099537A1 (en) * 2002-11-08 2004-05-27 Toyo Tanso Co., Ltd. Fluorine gas generator and method of electrolytic bath liquid level control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1283280A1 (fr) * 2000-04-07 2003-02-12 Toyo Tanso Co., Ltd. Appareil pour la production de fluor gazeux
WO2004007802A2 (fr) * 2002-07-11 2004-01-22 L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Appareil de production de gaz fluore
US20040099537A1 (en) * 2002-11-08 2004-05-27 Toyo Tanso Co., Ltd. Fluorine gas generator and method of electrolytic bath liquid level control

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140360884A1 (en) * 2009-06-12 2014-12-11 Central Glass Company, Limited Fluorine Gas Generating Device
US8871174B2 (en) 2010-03-26 2014-10-28 Solvay Sa Method for the supply of fluorine
WO2011117234A3 (fr) * 2010-03-26 2012-06-07 Solvay Sa Procédé d'approvisionnement en fluor
WO2011117234A2 (fr) 2010-03-26 2011-09-29 Solvay Sa Procédé d'approvisionnement en fluor
JP2016033264A (ja) * 2010-03-26 2016-03-10 ソルヴェイ（ソシエテ アノニム） フッ素供給方法
CN102822088A (zh) * 2010-03-26 2012-12-12 索尔维公司 供应氟的方法
KR101866580B1 (ko) * 2010-04-08 2018-06-11 솔베이(소시에떼아노님) 정제된 불소를 이용한 전자장치의 제조 방법
KR20130092393A (ko) * 2010-04-08 2013-08-20 솔베이(소시에떼아노님) 정제된 불소를 이용한 전자장치의 제조 방법
CN102821825A (zh) * 2010-04-08 2012-12-12 索尔维公司 使用纯化过的氟制造电子器件的方法
WO2011124642A3 (fr) * 2010-04-08 2012-08-02 Solvay Sa Procédé de fabrication de dispositifs électroniques avec du fluor épuré
WO2011124642A2 (fr) * 2010-04-08 2011-10-13 Solvay Sa Procédé de fabrication de dispositifs électroniques avec du fluor épuré
US8821821B2 (en) 2010-08-05 2014-09-02 Solvay Sa Method for the purification of fluorine
CN103079992A (zh) * 2010-08-05 2013-05-01 索尔维公司 氟纯化的方法
CN107253700A (zh) * 2010-08-05 2017-10-17 索尔维公司 氟纯化的方法
WO2012016997A1 (fr) * 2010-08-05 2012-02-09 Solvay Sa Procédé de purification du fluor
EP3848623A4 (fr) * 2018-09-03 2021-11-17 Showa Denko K.K. Procédé et équipement permettant de fournir un gaz contenant du fluor gazeux
CN113906166B (zh) * 2019-12-27 2024-02-09 株式会社力森诺科 氟气制造装置及光散射检测器
CN113906166A (zh) * 2019-12-27 2022-01-07 昭和电工株式会社 氟气制造装置及光散射检测器
CN113874555B (zh) * 2019-12-27 2024-01-05 株式会社力森诺科 氟气的制造方法及氟气制造装置
CN113874555A (zh) * 2019-12-27 2021-12-31 昭和电工株式会社 氟气的制造方法及氟气制造装置

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