WO2006035495A1 - 耐熱性樹脂ペースト及びその製造方法 - Google Patents
耐熱性樹脂ペースト及びその製造方法 Download PDFInfo
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- WO2006035495A1 WO2006035495A1 PCT/JP2004/014172 JP2004014172W WO2006035495A1 WO 2006035495 A1 WO2006035495 A1 WO 2006035495A1 JP 2004014172 W JP2004014172 W JP 2004014172W WO 2006035495 A1 WO2006035495 A1 WO 2006035495A1
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- resistant resin
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/20—Compounding polymers with additives, e.g. colouring
- C08J3/205—Compounding polymers with additives, e.g. colouring in the presence of a continuous liquid phase
- C08J3/21—Compounding polymers with additives, e.g. colouring in the presence of a continuous liquid phase the polymer being premixed with a liquid phase
- C08J3/215—Compounding polymers with additives, e.g. colouring in the presence of a continuous liquid phase the polymer being premixed with a liquid phase at least one additive being also premixed with a liquid phase
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/922—Bond pads being integral with underlying chip-level interconnections
- H10W72/9223—Bond pads being integral with underlying chip-level interconnections with redistribution layers [RDL]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
Definitions
- the present invention relates to a heat-resistant resin paste excellent in adhesion, heat resistance, flexibility and workability, and a method for producing the same.
- a heat-resistant resin such as a polyimide resin is excellent in heat resistance and mechanical properties, and has already been widely used in the field of electronics as a surface protective film or an interlayer insulating film of a semiconductor element.
- screen printing methods that do not require complicated steps such as exposure and development as image forming methods for polyimide-based resin films for surface protective films, interlayer insulating films, stress relieving materials, etc. Dispense coating methods have attracted attention.
- a heat-resistant rosin paste having a base resin, a filler, and a solvent and having thixotropic properties is generally used.
- Most of the heat-resistant grease pastes developed so far use silica filler or non-soluble polyimide filler as a filler for imparting thixotropy. If the air gaps and bubbles remain, the film strength is low, and the electrical insulation is poor, the following problems have been pointed out.
- the filler is first dissolved at the time of heating and drying without these problems, and it is a combination of a special organic filler (soluble type filler) and a base resin that are compatible with the base resin.
- a heat-resistant resin paste capable of forming a polyimide pattern having excellent characteristics has been disclosed (see Japanese Patent No. 2697215 and Japanese Patent No. 3087290). Disclosure of the invention
- an object of the present invention is to provide a heat-resistant greaves paste capable of forming a precise pattern, having excellent adhesion, heat resistance, flexibility, and shortening the production time, and the production thereof. Is to provide a method.
- the present invention provides a thixotropic property to a heat-resistant resin paste by using a heat-resistant resin filler that is soluble in the first solvent but is insoluble in the second solvent, and has a screen mark.
- a heat-resistant resin filler that is soluble in the first solvent but is insoluble in the second solvent, and has a screen mark.
- the present invention selects the second organic solvent containing lanthanides as the organic solvent, so that the preparation of the heat-resistant resin filler and the production of the heat-resistant resin paste are the same. It can be carried out in a short time in a solvent and improves the productivity of a heat-resistant resin paste.
- the present invention is soluble in the first organic solvent (A1), the second organic solvent (A2) containing exogenes, and a mixed organic solvent of (A1) and (A2).
- a heat-resistant resin (B) and a heat-resistant resin filler (C) that is soluble in (A 1) and insoluble in (A2) (C), (Al), (A2) and (B
- the present invention relates to a heat-resistant resin paste characterized in that (C) is dispersed in a solution containing).
- the present invention also relates to the above heat-resistant resin paste, wherein the first organic solvent (A2) contains a nitrogen-containing compound.
- the present invention also relates to the above heat-resistant rosin paste, wherein the nitrogen-containing compound is a heterocyclic nitrogen-containing compound.
- the present invention also relates to the above heat-resistant grease paste, wherein the ratatones are ⁇ -petit-mouth ratatones or ⁇ -valerolatatanes.
- the present invention also relates to the above heat-resistant resin paste wherein the heat-resistant resin (resin) and the heat-resistant resin filler (C) are polyimide resin or a precursor thereof.
- the present invention also relates to a heat-resistant resin ( ⁇ ) and ⁇ or heat-resistant resin filler (C) represented by the following general formula (I):
- R, R, R, and R are each independently a hydrogen atom, an alkyl group having 1 to 9 carbon atoms.
- R and R are each independently a hydrogen atom, an alkyl group, a trifluoromethyl group,
- the said heat resistant resin paste which is the polyimide resin obtained by making it react with the tetracarboxylic acids containing the aromatic tetracarboxylic dianhydride represented by these, or its derivative (s), or its precursor.
- the present invention also relates to the above heat resistant resin paste, wherein the heat resistant resin paste has a thixotropic coefficient of 1.5 or more.
- the present invention also relates to the above heat resistant resin paste, wherein the heat resistant resin filler (C) is a filler prepared in the second organic solvent (A2).
- the present invention also relates to a method for producing the above heat-resistant resin paste, wherein the heat-resistant resin filler (C) is prepared in a second organic solvent (A2) containing exogenes.
- FIG. 1 is a cross-sectional view showing an example of a diode using the heat-resistant resin paste of the present invention as an insulating film.
- 1 is an electrode
- 2 is an insulating film
- 3 is an oxide film
- 4 is a chip.
- FIG. 2 is a cross-sectional view showing an example of a semiconductor package using the heat-resistant resin paste of the present invention as a stress relaxation layer.
- 11 is a stress relaxation layer
- 12 is a solder ball
- 13 is an electrode
- 14 is a silicon wafer
- 15 is a polyimide insulating film
- 16 is an aluminum pad.
- the heat-resistant rosin paste of the present invention includes a first organic solvent (A1), a second organic solvent (A2) containing latatones, and a mixed organic solvent of (A1) and (A2). It contains a heat-resistant resin (B) that is soluble, and a heat-resistant resin (C) that is soluble in (A1) and insoluble in (A2). It is a sign.
- the heat-resistant resin (B) when used as a mixed organic solvent with the second organic solvent (A2), the heat-resistant resin (B) is dissolved, There is no particular limitation as long as it does not dissolve the resin filler (C) and can dissolve the heat-resistant resin filler (C) alone with the first organic solvent (A1).
- the heat-resistant resin (B) is dissolved by the first organic solvent (A1) alone.
- (A1) includes, for example, diethylene glycol dimethyl ether, diethylene glycol jetyl ether, triethylene glycol resin methinore ethenore, etherenoic compounds such as triethyleneglycolole retino enotenole, dimethyl sulfoxide, jetyl sulfoxide, dimethyl sulfone.
- Sulfur-containing compounds such as sulfolane, ester compounds such as cellosolve acetate, ketone compounds such as cyclohexanone and methylethyl ketone, N-methylpyrrolidone, N, N, -dimethylacetamide, N, N, -dimethylformamide, 1 , 3-dimethyl-3, 4, 5, 6-tetrahydro-2 (1 H) -pyrimidinone, 1,3-dimethyl-2-imidazolidinone, nitrogen-containing compounds such as various amines, toluene, xylene, etc.
- Aromatic hydrocarbon compounds of May be used in combination alone, or two or more kinds.
- the first organic solvent (A1) used in the present invention preferably contains a nitrogen-containing compound.
- a nitrogen-containing compound There are no particular restrictions on the nitrogen-containing compounds, and the above-mentioned N-methylbicarbidone, N, N, -dimethylacetamide, N, N, -dimethylformamide, 1,3-dimethyl-3, 4, 5, 6— Tetrahydro 1 2 (1H) -pyrimidinone, 1,3-dimethyl-2-imidazolidinone, various amines, etc. can be used, and it is preferably a heterocyclic nitrogen-containing compound from the viewpoint of excellent solubility. .
- the heterocyclic nitrogen-containing compound that is, the heterocyclic polar solvent
- the heat-resistant resin (B) and the heat-resistant resin filter (C) are dissolved.
- N-methylpyrrolidone, 1,3-dimethyl-3, 4, 5, 6-tetrahydro-2 (1H) -pyrimidinone, 1,3-dimethyl-2-imidazolidinone, etc. should be used. Can do.
- the amount of the heterocyclic nitrogen-containing compound used is 40% by weight based on the total amount of the first organic solvent (A1) and the second organic solvent (A2) containing lactones described later. More preferably, it is preferably 50% by weight or more, more preferably 60% by weight or more.
- the amount of the heterocyclic nitrogen-containing compound used is less than 40% by weight, the solubility of (B) heat-resistant rosin and (C) heat-resistant cocoon filler (which will be described later) is reduced, The resulting coating properties tend to be reduced.
- the second organic solvent (A2) used in the present invention is an organic solvent containing latatones, and is a raccoon or a solvate and other mixed solvent.
- the second organic solvent (A2) is used as a mixed organic solvent with the first organic solvent (A1), the heat-resistant resin (B) is dissolved, and the heat-resistant resin filler (C) is dissolved.
- the amount of ratatones used is preferably 5% by weight or more with respect to the total amount of the second organic solvent (A2), more preferably 5-95% by weight.
- Examples of the ratatones include ⁇ -butyrolatatane, ⁇ -valerolataton, ⁇ -force prolatatatone, ⁇ -heptaratatone, ⁇ -acetylyl ⁇ -butyrolatatane, ⁇ -force prolatatatone, etc. Two or more types can be mixed and used. Among these, in consideration of the pot life at the time of applying the heat-resistant rosin paste, it is preferable to use ⁇ -petit-mouthed ratatones and ⁇ -valerolatatanes in terms of high boiling point.
- the solvent mixed with the ratatones is not particularly limited as long as it is compatible with the ratatones.
- the boiling point of each of the organic solvents (A1) and (A2) used in the present invention is preferably 100 ° C or higher in consideration of the pot life at the time of applying the heat-resistant resin paste.
- the boiling point of the mixed solvent of (A 1) and (A2) is preferably 100 to 250 ° C.
- the soluble heat-resistant rosin (B) in the present invention is soluble in a mixed organic solvent of (A1) and (A2), preferably at a temperature of -25 ° C-150 ° C.
- a mixed organic solvent of (A1) and (A2) preferably at a temperature of -25 ° C-150 ° C.
- specific examples include polyimide resin, polyamideimide resin, polyamide resin, and the like, considering heat resistance and the like, polyimide resin or a precursor thereof. Is preferred.
- the heat-resistant resin (B) is soluble in the first organic solvent (A1) alone—more preferably at a temperature of 25 ° C-150 ° C. .
- the heat-resistant resin (B) may be insoluble in the second organic solvent (A2) alone.
- Examples of a method for obtaining the above polyimide resin or precursor thereof include, for example, diamines containing an aromatic, aliphatic or alicyclic diamine compound and a tetracarboxylic acid containing tetracarboxylic dianhydride or a derivative thereof.
- Examples thereof include a method by reaction with acids, and the reaction can be carried out in the presence of an organic solvent.
- the reaction time at which the reaction temperature is preferably 25 ° C to 250 ° C can be appropriately selected depending on the scale of the notch, the reaction conditions employed, and the like.
- Carboxylic acids are not particularly limited, but considering the solubility in a mixed organic solvent of (A1) the first organic solvent and (A2) the second organic solvent containing Radon, Diamines are represented by the following general formula (I) and Z or general formula ( ⁇ ). Preferred to use compounds
- R, R, R, and R are each independently a hydrogen atom, an alkyl group having 1 to 9 carbon atoms.
- R and R are each independently a hydrogen atom, an alkyl group, a trifluoromethyl group,
- Specific examples of the compound represented by the general formula (I) include 2, 2 bis [4 (4 aminophenoxy) phenol] propane, 2, 2 bis [3-methyl-4- (4- Aminophenoxy) phenol] propane, 2,2-bis [4- (4 aminophenoxy) phenol] butane, 2,2-bis [3-methyl-4- (4-aminophenoxy) phenol] butane, 2 , 2 Bis [3,5 dimethyl-4- (4aminophenoxy) phenol] butane, 2,2-bis [3,5 Jib-mouthed 4- (4 aminophenoxy) phenol] butane, 1, 1, 1, 3, 3, 3—Hexafluoro-1,2, bis (4- (4-aminophenol) phenol) propane, 1, 1, 1, 3, 3, 3-hexafluoro-2,2-bis [ 3-methyl-4- (4 aminophenoxy) phenol] propane, 1,1 bis [4- (4 aminophenoxy) phenol] cyclohexane, 1,1 bis [4- 4-Aminophenoxy) phenyl] cyclopentane, bis
- the compound of the general formula (II) include 4,4′-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, 3,4′-diaminodiphenyl sulfone, 4 , 4'-diaminodiphenyl ether, 3, 3'-diaminodiphenyl ether, 3, 4'-diaminodiphenyl ether, 3, 4, diaminobiphenyl, 4, 4, diaminobenzophenone, 3, 3,4-Diaminobenzophenone, 1,4-bis (4, aminophenol) benzene, etc. are mentioned, and among these, 4,4, -diaminodiphenyl ether is the most preferred!
- the aromatic diamine compound represented by the general formulas (I) and Z or the general formula ( ⁇ ) is preferably 1 to 100 mol% with respect to the total amount of diamine compounds. 2-100 mol% is more preferred and 5-100 mol% is more preferred.
- an aromatic diamine compound represented by a formula other than the above general formula (I) may be used.
- diamines in addition to the above aromatic diamine compound, for example, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1, 6 -Diaminohexane, 1,7-Diaminoheptane, 1,8-Diaminooctane, 1,9-Diaminononane, 1,10-Diaminodecane, 1,11-Diaminoundecane, 1,3-bis (3-aminopropyl) tetramethyldisiloxane 1,3 bis (3-aminopropyl) tetramethylpolysiloxanes and other aliphatic diamines and diamine compounds such as diaminosiloxanes can be used.
- 1,2-diaminoethane 1,3-diaminopropane
- 1,4-diaminobutane 1,5-diaminopentane
- diamines may be used alone or in combination of two or more.
- the tetracarboxylic dianhydride or its derivative includes the following general formula (III)
- Specific examples of the compound represented by the general formula (ii) include 3, 3 ', 4, 4'-biphenyltetracarboxylic dianhydride, 2, 2', 3, 3 ' —Biphenyltetracarboxylic dianhydride, 2, 3, 3 '4'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, bis (3 , 4-Dicarboxyphenol) ether dianhydride, 3, 4, 3 ', 4' monobenzophenone tetracarboxylic dianhydride, 2, 3, 2 ', 3'-benzophenone tetracarboxylic acid
- Examples include dianhydrides, tetracarboxylic dianhydrides such as 2, 3, 3 ', 4, monobenzophenone tetracarboxylic dianhydride, and derivatives thereof, among which 3, 3', 4, 4 '' It is preferable to use
- dicarboxylic acids can be used alone or in combination of two or more.
- organic solvent used for the preparation of the polyimide resin or heat-resistant resin (B) or its precursor such as diethylene glycol dimethyl ether, Ether compounds such as N-glycol jetyl ether, triethylene glycol dimethyl ether, triethylene glycol jetyl ether, sulfur-containing compounds such as dimethyl sulfoxide, ethyl sulfoxide, dimethyl sulfone, sulfolane, ⁇ -butyrolatatone, cellosolve acetate, etc.
- A1 first organic solvent
- the heat-resistant resin (wax) has a number average molecular weight force of 1,000 to 200,000 determined by gel permeation chromatography (GPC) method.
- a force S of 2, 00 00—180,000 is preferable to a force S, and a force S of 3,000—160,000 is most preferable.
- the heat resistant cocoon filler (C) is insoluble in the mixed organic solvent of (A1) and ( ⁇ 2), preferably insoluble at least at -25 ° C-250 ° C. Further, the heat resistant cocoon filler (C) is soluble in the first organic solvent (A1) alone, preferably at least at one point of ⁇ 25 ° C. to 250 ° C. Further, the heat-resistant resin filler (C) is insoluble in the second organic solvent (A2) alone, and preferably insoluble at least at ⁇ 25 ° C. to 250 ° C. With such a filler, there is no particular restriction on the heat resistant resin filler (C).
- a polyimide resin, a polyamideimide resin, a polyamide resin, or a resin filler that also has a precursor power thereof can be appropriately selected depending on the solvent used.
- polyimide resin or a precursor thereof is preferable from the viewpoint of heat resistance.
- a polyimide resin or a resin filler that is a precursor thereof examples include, for example, diamines containing aromatic, aliphatic, or alicyclic diamine compounds, and tetra-force sulfonic acid dianhydrides. Or a method by reaction with dicarboxylic acids containing a derivative thereof. And the reaction can be carried out in the presence of an organic solvent.
- the reaction temperature is preferably 10-120 ° C, more preferably 15-100 ° C.
- reaction temperature is less than 10 ° C, the reaction tends to be insufficient and does not proceed, and if it exceeds 120 ° C, the precipitation of the filler tends to be insufficient.
- the reaction time can be appropriately selected depending on the scale of the batch and the reaction conditions employed.
- diamines and dicarboxylic acids described above may be the same as those used in the heat-resistant rosin (B) with no particular restrictions.
- organic solvent used for the preparation of the polyimide resin or its precursor which is a heat resistant resin filler (C), and it is exactly the same as that used for the heat resistant resin (B).
- a second organic solvent (A2) A2
- the heat-resistant resin filler (C) has a number average molecular weight determined by gel permeation chromatography (GPC) method of 1,000 to 200,000.
- GPC gel permeation chromatography
- the force S is more preferably 2,000—180,000, and the force S is most preferably 3,000—160,000.
- the mixing ratio of the heat-resistant resin (B) and the heat-resistant resin filler (C) is preferably 10Z90-90-10 by weight, more preferably 15Z85-85Z15. More preferably, it is 20 / 80-8 0Z20.
- the thixotropic coefficient of the heat-resistant rosin paste of the present invention is 1.5 or more, more preferably 1.6 or more, more preferably 1.7 or more, and particularly preferably 1.8 or more.
- the thixotropy coefficient of the heat-resistant resin paste was measured using an E-type viscometer (Tokyo Keiki Co., Ltd., RE-80U type) at a sample amount of 0.2 g and a measurement temperature of 25 ° C. It is expressed as the apparent viscosity of the lrpm and lOrpm paste, the ratio of r? And r ?, ⁇ ⁇ ⁇ . If the thixotropy coefficient is 1.5,
- the viscosity (measured at 0.5 rpm: 7?) Of the heat resistant rosin paste is preferably 1 lOOOPa's,
- 3-900 Pa's force is more preferable, 3-800 Pa's force is particularly preferable. If the viscosity of the heat-resistant resin paste is less than lPa ⁇ s, printing tends to cause dripping on the paste after application. When it exceeds lOOOPa 's, workability tends to decrease.
- the concentration of the heat-resistant resin (B) and the heat-resistant resin filler (C) in the heat-resistant resin paste is 5 to 90% by weight, 10 to 90% by weight. It is particularly preferable that the amount is 80 to 80% by weight. If it is less than 5% by weight, it tends to be difficult to increase the thickness of the resulting coating film. If it exceeds 90% by weight, the fluidity of the paste is impaired, and workability tends to be reduced.
- An antifoaming agent, a pigment, a dye, a plasticizer, an antioxidant, a coupling agent, a grease modifying agent, and the like can be added to the heat resistant grease paste of the present invention as necessary. .
- the heat-resistant cocoon filler (C) can be prepared in the second organic solvent (A2) containing exogenes and is excellent in workability.
- a method for producing a heat-resistant resin paste can be provided.
- the heat-resistant rosin paste of the present invention is preferably a solution in which a heat-resistant rosin (B) soluble in the first organic solvent (A1) is dissolved in the organic solvent, and the second organic solvent (A2). It can be obtained by mixing a dispersion solution in which an insoluble heat resistant resin filler (C) is dispersed in an organic solvent. Mixing is preferably performed at 10-180 ° C, more preferably 15-160 ° C. If the mixing temperature is less than 10 ° C, the heat-resistant resin solution and the heat-resistant resin filler-dispersed solution tend not to mix well, and if the mixing temperature exceeds 180 ° C, the heat-resistant resin solution becomes an organic solvent. There is a tendency to dissolve in, and there is also a tendency that the coatability is deteriorated when there is a shift.
- the polyimide resin or its precursor, which is a heat resistant resin filler (C), is synthesized by reacting in a second organic solvent (A2) containing ratatones.
- A2 second organic solvent
- the amount of ratatones used is 5-95% by weight, preferably 10-90% by weight, more preferably 15-90% by weight, based on the total amount of organic solvent used in the reaction. It is particularly preferable to use 15 to 85% by weight.
- the amount of ratatones used is less than 5% by weight, it takes time to deposit the heat-resistant organic filler, so the workability tends to be inferior.
- it exceeds 95% by weight it becomes difficult to synthesize a heat-resistant resin filler. Tend.
- the polyimide resin or its precursor which is the heat-resistant resin (B) is synthesized by reacting in the first organic solvent (A1).
- a general method can be used.
- a thermal ring closure method in which dehydration ring closure is performed by heating at normal pressure or reduced pressure
- a chemical ring closure method using a dehydrating agent such as acetic anhydride in the presence or absence of a catalyst, and the like can be used.
- the thermal ring closure method it is preferably carried out while removing water generated by the dehydration reaction from the system.
- reaction solution is carried out by heating the reaction solution to 80-400 ° C, preferably 100-250 ° C.
- a solvent that azeotropes with water such as benzene, toluene, xylene, etc., may be used in combination, and water may be removed azeotropically.
- the reaction is carried out in the presence of a chemical dehydrating agent at 0-120 ° C, preferably 10-80 ° C.
- a chemical dehydrating agent for example, acid anhydrides such as acetic anhydride, propionic anhydride, butyric anhydride and benzoic acid, and carbodiimide compounds such as dicyclohexylcarbodiimide are preferably used.
- a substance that promotes the cyclization reaction such as pyridine, isoquinoline, trimethylamine, triethylamine, aminoviridine, imidazole and the like.
- the chemical dehydrating agent is used in an amount of 90 to 600 mol% based on the total amount of diamine compounds, and the substance that promotes the cyclization reaction is used in an amount of 40 to 300 mol% based on the total amount of diamine compounds.
- a dehydration catalyst such as triphenyl phosphate, tricyclohexyl phosphite, triphenyl phosphate, phosphorus compounds such as phosphoric acid and phosphorus pentoxide, and boron compounds such as boric acid and boric anhydride may be used. Considering reduction of remaining ionic impurities, the above-described thermal ring closure method is preferable.
- the heat-resistant resin paste of the present invention is excellent in adhesion, heat resistance and workability.
- the use of ratatones as the second organic solvent greatly improves the production efficiency of heat-resistant rosin paste.
- the heat-resistant resin paste of the present invention can form a precision pattern by screen printing, dispensing, etc., and a semiconductor device using the heat-resistant resin paste of the present invention gives good characteristics. .
- ⁇ BL ⁇ -butyrorataton
- Example 1 the reaction was exactly the same as in Example 1 except that DMPU 133.25 g and ⁇ -BL 308.59 g of the reaction solvent were changed to DMPU 441.84 g, and then allowed to stand at room temperature for 30 days.
- the polyimide precursor filler did not precipitate.
- the viscosity and thixotropy coefficient of the heat-resistant rosin paste (PIP-1) obtained in Example 5 were 0.2 g of sample amount using an E-type viscometer (manufactured by Tokyo Keiki Co., Ltd., RE-80U type). The measurement temperature was 25 ° C. The viscosity was measured at 0.5 rpm, and the thixotropy coefficient was evaluated based on the apparent viscosity of the pastes with rotation speeds of lrpm and lOrpm, the ratio of and ⁇ / ⁇ .
- Sarako the heat-resistant resin paste (PIP-1) obtained in Example 5 on a silicon wafer, a screen printing machine (LS-34GX with alignment device, manufactured by Neurong Seimitsu Kogyo Co., Ltd.), 2
- the printability was evaluated using a mesh alloy additive-free meshless metal plate (made by Mesh Kogyo Co., Ltd., thickness 50 m, pattern size 8 mm X 8 mm) and Permalex metal squeegee (imported by Sakai Kogyo Co., Ltd.).
- the obtained resin composition was applied onto a Teflon (registered trademark) substrate, heated at 350 ° C to dry the organic solvent, and a coating film having a thickness of 25 ⁇ m was formed.
- the tensile elastic modulus (25 ° C, 10Hz) and glass transition temperature (frequency 10Hz, heating rate 2 ° CZmin) were measured using a dynamic viscoelastic spectrometer (manufactured by Iwamoto Seisakusho Co., Ltd.).
- thermodecomposition starting temperature 5% weight loss temperature
- Example 5 except that the heat-resistant resin solution (PIF-1) obtained in Example 1 was used as the heat-resistant resin solution (PIF-2) obtained in Example 2. The same operation as in No. 5 was performed to obtain a heat-resistant resin paste (PIP-2) in which the heat-resistant resin was dissolved and the heat-resistant resin filler was dispersed.
- Example 5 except that the heat-resistant resin solution (PIF-1) obtained in Example 1 was used as the heat-resistant resin solution (PIF-3) obtained in Example 3. Same as 5 The heat-resistant resin paste (PIP-3) in which the heat-resistant resin was dissolved and the heat-resistant resin filler was dispersed was obtained.
- Example 5 except that the heat-resistant resin solution (PIF-1) obtained in Example 1 was changed to the heat-resistant resin solution (PIF-4) obtained in Example 4. The same operation as in No. 5 was performed to obtain a heat resistant resin paste (PIP-4) in which the heat resistant resin was dissolved and the heat resistant resin filler was dispersed.
- Example 5 the same heat-resistant resin solution (PIF-1) obtained in Example 1 was used as in Example 5 except that the solution obtained in Comparative Example 1 was used. A rosin solution (PIP-5) was obtained.
- the heat-resistant resin paste of the present invention includes various semiconductor devices, semiconductor packages, thermal heads, image sensors, multichip high-density mounting substrates, diodes, capacitors, and transformers. It can be used for protective devices such as various devices such as transistors, flexible wiring boards, various wiring boards such as rigid wiring boards, insulating films, stress relaxation layers, adhesives, various heat-resistant printing inks, etc., and is extremely useful industrially. .
- Fig. 1 shows an example of use as an insulating film of a diode
- Fig. 2 shows an example of use as a stress relaxation layer of a semiconductor device.
- the method for obtaining a precise pattern with the heat-resistant rosin paste of the present invention is not particularly limited.
- a lithographic printing method for example, a screen printing method, a dispensation coating method, a potting method, a curtain coating method, a relief printing method, a four-plate printing method.
- a lithographic printing method for example, a screen printing method, a dispensation coating method, a potting method, a curtain coating method, a relief printing method, a four-plate printing method.
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- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
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Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/573,959 US8765867B2 (en) | 2004-09-28 | 2004-09-28 | Heat-resistant resin paste and method for producing same |
| JP2006537589A JP4710831B2 (ja) | 2004-09-28 | 2004-09-28 | 耐熱性樹脂ペースト及びその製造方法 |
| PCT/JP2004/014172 WO2006035495A1 (ja) | 2004-09-28 | 2004-09-28 | 耐熱性樹脂ペースト及びその製造方法 |
| CNB2004800007151A CN100528966C (zh) | 2004-09-28 | 2004-09-28 | 耐热性树脂浆料及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2004/014172 WO2006035495A1 (ja) | 2004-09-28 | 2004-09-28 | 耐熱性樹脂ペースト及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2006035495A1 true WO2006035495A1 (ja) | 2006-04-06 |
Family
ID=36118647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2004/014172 Ceased WO2006035495A1 (ja) | 2004-09-28 | 2004-09-28 | 耐熱性樹脂ペースト及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8765867B2 (ja) |
| JP (1) | JP4710831B2 (ja) |
| CN (1) | CN100528966C (ja) |
| WO (1) | WO2006035495A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008280509A (ja) * | 2007-04-13 | 2008-11-20 | Hitachi Chem Co Ltd | 耐熱性樹脂ペースト |
| JP2011178855A (ja) * | 2010-02-26 | 2011-09-15 | Pi R & D Co Ltd | 半導体装置用ポリイミド樹脂組成物並びにそれを用いた半導体装置中の膜形成方法及び半導体装置 |
| EP2055747A4 (en) * | 2006-07-31 | 2011-10-05 | Hitachi Chemical Co Ltd | HEAT RESISTANT RESIN PULP |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103298855B (zh) * | 2011-07-08 | 2015-09-02 | 三井化学株式会社 | 聚酰亚胺树脂组合物及含有其的叠层体 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5037862A (en) * | 1987-06-11 | 1991-08-06 | Hitachi Chemical Company, Ltd. | Polyamide-imide resin pastes |
| JPH04153261A (ja) * | 1990-10-17 | 1992-05-26 | Hitachi Chem Co Ltd | 耐熱樹脂ペーストおよびこれを用いたic |
| JPH08120075A (ja) * | 1994-10-21 | 1996-05-14 | Sumitomo Chem Co Ltd | コポリイミドの製造法 |
| JPH09328549A (ja) * | 1996-06-12 | 1997-12-22 | Central Glass Co Ltd | ポリイミド組成物 |
| JP2697215B2 (ja) * | 1988-12-29 | 1998-01-14 | 日立化成工業株式会社 | 耐熱樹脂ペーストおよびこれを用いたic |
| JP3087290B2 (ja) * | 1990-07-26 | 2000-09-11 | 日立化成工業株式会社 | 耐熱性樹脂ペーストおよびこれを用いたic |
| WO2001066645A1 (fr) * | 2000-03-06 | 2001-09-13 | Hitachi Chemical Co., Ltd. | Composition de resine, pate de resine thermoresistante et dispositif a semi-conducteur utilisant cette composition et cette resine et procede de fabrication de ce dispositif |
| JP2001264771A (ja) * | 2001-01-26 | 2001-09-26 | Jsr Corp | 液晶配向剤および液晶配向膜の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6436649A (en) | 1987-07-30 | 1989-02-07 | Hitachi Chemical Co Ltd | Polyamidimide resin paste |
| JP2833744B2 (ja) | 1987-06-11 | 1998-12-09 | 日立化成工業株式会社 | ポリエーテルアミドイミド樹脂ペースト |
| US5087658A (en) | 1988-12-29 | 1992-02-11 | Hitachi Chemical Company, Ltd. | Heat-resistant resin paste and integrated circuit device produced by using the heat-resistant resin paste |
| JPH0387290A (ja) | 1989-08-31 | 1991-04-12 | Toshiba Corp | 情報記録媒体 |
| KR960002268B1 (ko) | 1993-07-23 | 1996-02-14 | 두산개발주식회사 | 유기물 농도감시장치 |
-
2004
- 2004-09-28 US US11/573,959 patent/US8765867B2/en not_active Expired - Fee Related
- 2004-09-28 JP JP2006537589A patent/JP4710831B2/ja not_active Expired - Lifetime
- 2004-09-28 CN CNB2004800007151A patent/CN100528966C/zh not_active Expired - Fee Related
- 2004-09-28 WO PCT/JP2004/014172 patent/WO2006035495A1/ja not_active Ceased
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5037862A (en) * | 1987-06-11 | 1991-08-06 | Hitachi Chemical Company, Ltd. | Polyamide-imide resin pastes |
| JP2697215B2 (ja) * | 1988-12-29 | 1998-01-14 | 日立化成工業株式会社 | 耐熱樹脂ペーストおよびこれを用いたic |
| JP3087290B2 (ja) * | 1990-07-26 | 2000-09-11 | 日立化成工業株式会社 | 耐熱性樹脂ペーストおよびこれを用いたic |
| JPH04153261A (ja) * | 1990-10-17 | 1992-05-26 | Hitachi Chem Co Ltd | 耐熱樹脂ペーストおよびこれを用いたic |
| JPH08120075A (ja) * | 1994-10-21 | 1996-05-14 | Sumitomo Chem Co Ltd | コポリイミドの製造法 |
| JPH09328549A (ja) * | 1996-06-12 | 1997-12-22 | Central Glass Co Ltd | ポリイミド組成物 |
| WO2001066645A1 (fr) * | 2000-03-06 | 2001-09-13 | Hitachi Chemical Co., Ltd. | Composition de resine, pate de resine thermoresistante et dispositif a semi-conducteur utilisant cette composition et cette resine et procede de fabrication de ce dispositif |
| JP2001264771A (ja) * | 2001-01-26 | 2001-09-26 | Jsr Corp | 液晶配向剤および液晶配向膜の製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2055747A4 (en) * | 2006-07-31 | 2011-10-05 | Hitachi Chemical Co Ltd | HEAT RESISTANT RESIN PULP |
| JP5343562B2 (ja) * | 2006-07-31 | 2013-11-13 | 日立化成株式会社 | 耐熱性樹脂ペースト |
| US8759440B2 (en) | 2006-07-31 | 2014-06-24 | Hitachi Chemical Company, Ltd. | Heat-resistant resin paste |
| JP2008280509A (ja) * | 2007-04-13 | 2008-11-20 | Hitachi Chem Co Ltd | 耐熱性樹脂ペースト |
| JP2011178855A (ja) * | 2010-02-26 | 2011-09-15 | Pi R & D Co Ltd | 半導体装置用ポリイミド樹脂組成物並びにそれを用いた半導体装置中の膜形成方法及び半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1833007A (zh) | 2006-09-13 |
| JP4710831B2 (ja) | 2011-06-29 |
| CN100528966C (zh) | 2009-08-19 |
| JPWO2006035495A1 (ja) | 2008-05-15 |
| US8765867B2 (en) | 2014-07-01 |
| US20090088536A1 (en) | 2009-04-02 |
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