WO2006019178A1 - Procédé et dispositif d'exposition - Google Patents

Procédé et dispositif d'exposition Download PDF

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Publication number
WO2006019178A1
WO2006019178A1 PCT/JP2005/015306 JP2005015306W WO2006019178A1 WO 2006019178 A1 WO2006019178 A1 WO 2006019178A1 JP 2005015306 W JP2005015306 W JP 2005015306W WO 2006019178 A1 WO2006019178 A1 WO 2006019178A1
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WO
WIPO (PCT)
Prior art keywords
light
exposure
exposure light
amount
partial
Prior art date
Application number
PCT/JP2005/015306
Other languages
English (en)
Japanese (ja)
Inventor
Akihiro Hashiguchi
Atsuko Shimizu
Original Assignee
Fuji Photo Film Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co., Ltd. filed Critical Fuji Photo Film Co., Ltd.
Publication of WO2006019178A1 publication Critical patent/WO2006019178A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Definitions

  • the present invention relates to an exposure method and apparatus for focusing a plurality of exposure light beams emitted from a plurality of exposure light sources and irradiating the exposure surface with the focused light beams.
  • Japanese Patent Laid-Open No. 9-2 2 1 20 proposes a method in which an optical filter or a reflection mirror is provided in the optical path, and exposure light dimmed by these is photoelectrically detected by a photoelectric sensor or the like Has been.
  • an apparatus using a laser diode as an exposure light source has been proposed.
  • a laser diode is used as an exposure light source as described above, the output of each laser diode is small.
  • a method for acquiring high-power laser light using a plurality of laser diodes has been proposed. Yes. Specifically, a plurality of laser modules that combine laser beams emitted from a plurality of laser diodes by a multimode optical fiber are configured, and the multimode optical fibers of the plurality of laser modules are bundled into a bundle shape.
  • a method of obtaining a high-power laser beam by configuring a light source is employed (for example, Japanese Patent Laid-Open No. 2 0 0 3-3 3 7 4 2 5 and Japanese Patent Laid-Open No. 2 0 0 4- 1 2 6 0 3 (See No. 4).
  • the amount of laser light emitted from each laser diode has a large difference in the amount of light, so when trying to detect these with a photoelectric sensor having a predetermined detectable range, Some light amounts are outside the detectable range, making it difficult to detect all light amounts.
  • a photoelectric sensor having a different detectable range is provided for each light quantity, different types of photoelectric sensors must be prepared, and the same type of photoelectric sensor may be used. Compared to this, the unit price is higher and the cost is increased.
  • an object of the present invention is to provide an exposure method and an exposure apparatus capable of detecting laser light in a wide light quantity range in the exposure apparatus as described above.
  • Another object of the present invention is to provide an exposure method and an exposure apparatus that can detect a laser beam in a wide light amount range without incurring problems due to the above-described cost increase and contamination of the optical filter.
  • the exposure method of the present invention has a plurality of exposure light source sections, focuses the first exposure light emitted from each exposure light source section of the plurality of exposure light source sections, and focuses the focused first exposure light.
  • the exposure surface is irradiated with the second exposure light emitted from the exposure light emitting means that is emitted as the second exposure light, and the light amounts of the first exposure light and the second exposure light are detected by the irradiation means.
  • an attenuating means for forming attenuated light attenuated from incident exposure light with a first attenuation factor and a second attenuation factor larger than the first attenuation factor, and the amount of the first exposure light is detected.
  • each exposure light source unit When the first exposure light emitted from each exposure light source unit is attenuated by the first attenuation factor by the attenuation means, and when the amount of the second exposure light is detected, The second attenuation rate of the second exposure light emitted from the exposure light emission means is reduced by the attenuation means. And detecting the attenuated attenuated light.
  • the amount of attenuated light obtained by attenuating the first exposure light by the first attenuation factor and the amount of attenuated light obtained by attenuating the second exposure light by the second attenuation factor are respectively used.
  • the first attenuation factor and the second attenuation factor are within the detectable range of the same photoelectric detection means.
  • the magnitude of the attenuation rate can be set.
  • the attenuating means includes a first attenuator for extracting a part of the incident exposure light as first partial light, and a part of the first partial light extracted by the first attenuator.
  • a second attenuating part that reflects and takes out as the second partial light and transmits the first partial light other than the above-mentioned part and takes it out as the third partial light.
  • each exposure light source unit of the plurality of exposure light source units has a plurality of exposure light sources, and the third exposure light emitted from each exposure light source of the plurality of exposure light sources is focused, and the The third exposure light shall be emitted as the first exposure light, and the attenuation means shall form attenuation light attenuated from the incident exposure light with a third attenuation factor smaller than the first attenuation factor.
  • the attenuation means shall form attenuation light attenuated from the incident exposure light with a third attenuation factor smaller than the first attenuation factor.
  • the amount of attenuated light obtained by attenuating the first exposure light by the first attenuation factor the amount of attenuated light obtained by attenuating the second exposure light by the second attenuation factor, and the third exposure light by the third attenuation factor.
  • the magnitudes of the first attenuation factor, the second attenuation factor, and the third attenuation factor are set so that the amount of attenuation light attenuated by the rate falls within the detectable range of the same photoelectric detection means. can do.
  • the attenuating means includes a first attenuator for extracting a part of the incident exposure light as first partial light, and a part of the first partial light extracted by the first attenuator.
  • a second attenuator that reflects and takes out as a second partial light and transmits a first partial light other than the above-mentioned part and takes it out as a third partial light; and a second attenuator reflected by the second attenuator
  • the partial light of the first partial light and the third partial light transmitted through the second attenuating part are reflected and extracted as the fourth partial light, and one of the other partial lights.
  • a third attenuator that transmits the partial light and extracts it as the fifth partial light.
  • the light When detecting the amount of the first exposure light, the light is attenuated by the first attenuation factor. No Any one of the partial light, the fourth partial light, and the fifth partial light.
  • the second attenuation factor When detecting the spectrum and detecting the amount of the second exposure light, the second attenuation factor When detecting one of the partial light, the fourth partial light, and the fifth partial light attenuated by the above, and detecting the amount of the third exposure light, Any one of the partial light, the fourth partial light, and the fifth partial light attenuated by the third attenuation factor can be detected.
  • the light quantity of the second exposure light is detected, and when the light quantity of the second exposure light is not more than a predetermined target value, the first light quantity of the exposure light source unit is increased so that the light quantity of the second exposure light is increased.
  • the amount of exposure light can be adjusted.
  • the amount of the second exposure light is detected, and when the amount of the second exposure light is not more than a predetermined target value, the third exposure of the exposure light source is increased so that the amount of the second exposure light is increased.
  • the amount of light can be adjusted.
  • the amount of the second exposure light is detected again, and if the amount of the second exposure light is below a predetermined target value, the exposure light source characteristic data is acquired.
  • the amount of the third exposure light of the exposure light source can be adjusted again based on the characteristic data.
  • the light quantity of the second exposure light is detected again, and when the light quantity of the second exposure light is below a predetermined target value, the light quantity of the third exposure light Obtains information on an exposure light source that is less than or equal to a predetermined target value, and based on the information on the exposure light source, the third light source of an exposure light source other than the exposure light source whose light amount of the third exposure light is less than or equal to a predetermined target value again The amount of exposure light can be adjusted.
  • the irradiation means it is possible to detect the amount of irradiation light irradiated on the exposure surface by the irradiation means. Further, when the detected light amount of the irradiation light is equal to or less than a predetermined target value, the light amounts of the first exposure light of the plurality of exposure light source units are adjusted so that the light amount of the second exposure light is increased. Can be.
  • the exposure apparatus of the present invention has a plurality of exposure light source units, focuses the first exposure light emitted from each exposure light source unit of the plurality of exposure light source units, and focuses the focused first exposure light.
  • Exposure light emitting means for emitting second exposure light; irradiation means for irradiating the exposure surface with second exposure light emitted from the exposure light emitting means; and amounts of first exposure light and second exposure light
  • a photoelectric detecting means for detecting an attenuation means for forming attenuation light attenuated from incident exposure light with a first attenuation factor and a second attenuation factor larger than the first attenuation factor.
  • the second exposure light emitted from the exposure light emitting means It is characterized by detecting the attenuated light attenuated at the second attenuation rate by the attenuation means.
  • the amount of attenuated light obtained by attenuating the first exposure light by the first attenuation factor and the amount of attenuated light obtained by attenuating the second exposure light by the second attenuation factor are respectively used.
  • the first attenuation factor and the second attenuation factor can be set so as to be within the detectable range of the same photoelectric detection means.
  • the attenuating means includes a first attenuator for extracting a part of the incident exposure light as first partial light, and a part of the first partial light extracted by the first attenuator.
  • a second attenuating part that reflects and takes out as the second partial light and transmits the first partial light other than the above-mentioned part and takes it out as the third partial light.
  • each exposure light source unit of the plurality of exposure light source units has a plurality of exposure light sources, and the third exposure light emitted from each exposure light source of the plurality of exposure light sources is focused, and the The third exposure light shall be emitted as the first exposure light, and the attenuation means shall form attenuation light attenuated from the incident exposure light with a third attenuation factor smaller than the first attenuation factor.
  • the attenuation means When detecting the amount of the third exposure light, it is possible to detect the attenuated light obtained by attenuating the third exposure light emitted from the exposure light source by the attenuation means with the third attenuation factor. .
  • the amount of attenuated light obtained by attenuating the first exposure light by the first attenuation factor the amount of attenuated light obtained by attenuating the second exposure light by the second attenuation factor, and the third exposure light by the third attenuation factor.
  • Set the first attenuation factor, the second attenuation factor, and the third attenuation factor so that the amount of attenuated light attenuated by the rate falls within the detectable range of the same photoelectric detector. It can be
  • the attenuating means includes a first attenuator for extracting a part of the incident exposure light as first partial light, and a part of the first partial light extracted by the first attenuator.
  • a second attenuator that reflects and takes out as a second partial light and transmits a first partial light other than the above-mentioned part and takes it out as a third partial light; and a second attenuator reflected by the second attenuator
  • the partial light of the first partial light and the third partial light transmitted through the second attenuating part are reflected and extracted as the fourth partial light, and one of the other partial lights.
  • a third attenuator that transmits the partial light and extracts it as the fifth partial light.
  • any one of the partial light, the fourth partial light, and the fifth partial light is detected.
  • any one of the partial light, the fourth partial light, and the fifth partial light is detected.
  • any one of the partial light, the fourth partial light, and the fifth partial light attenuated by the second attenuation factor 1 If one partial light is detected and the amount of the third exposure light is detected, one of the partial light attenuated by the third attenuation factor, the fourth partial light, and the fifth partial light. Any one of the partial lights can be detected.
  • the first exposure light of the exposure light source unit is increased so that the amount of the second exposure light is increased. It may have a light amount adjusting means for adjusting the light amount.
  • the amount of the second exposure light detected by the photoelectric detection means is less than or equal to a predetermined target value
  • the amount of the third exposure light of the exposure light source is increased so that the amount of the second exposure light is increased. It is possible to have a light amount adjusting means for adjusting.
  • the light amount adjustment means And the light quantity of the third exposure light of the exposure light source can be adjusted again based on the characteristic data.
  • the light amount adjustment means Information on the exposure light source whose light intensity is less than or equal to a predetermined target value is obtained, and based on the information on the exposure light source, the exposure light sources other than the exposure light sources whose light intensity of the third exposure light is less than or equal to the predetermined target value again.
  • the amount of exposure light 3 can be adjusted.
  • Control means for controlling each exposure light source unit so that the exposure light is sequentially emitted, and the emitted first exposure light is detected by the photoelectric detection means, and the amount of the first exposure light detected by the photoelectric detection means If the exposure light source is less than or equal to a predetermined target value, there may be provided an abnormality warning means for giving a warning indicating that the exposure light source unit having a light amount equal to or less than the predetermined target value is abnormal.
  • it can have an irradiation light quantity detection means for detecting the light quantity of the irradiation light irradiated to the exposure surface by the irradiation means.
  • the irradiation light amount detection means when the amount of irradiation light detected by the irradiation light amount detection means is less than or equal to a predetermined target value, the first exposure light of the plurality of exposure light source units is increased so that the amount of second exposure light is increased.
  • An irradiation light amount adjusting means for adjusting the light amount can be provided.
  • Irradiation means abnormality warning means for warning that the irradiation means is abnormal It can have.
  • Attenuation means for forming attenuation light attenuated from incident exposure light at a first attenuation factor and a second attenuation factor larger than the first attenuation factor.
  • the attenuation light obtained by attenuating the first exposure light with the first attenuation factor is detected by the attenuation means, and a plurality of exposure light sources are detected.
  • the attenuated light attenuated by the second attenuation factor by the attenuation means is detected by the attenuation means. Exposure light in a large light amount range can be detected.
  • the amount of attenuated light obtained by attenuating the first exposure light by the first attenuation factor and the amount of attenuated light obtained by attenuating the second exposure light by the second attenuation factor are set so that each is within the detectable range of the same photoelectric detection means. Therefore, the cost can be reduced compared to the case of using different types of photoelectric detection means.
  • the attenuating means includes a first attenuator for extracting a part of the incident exposure light as first partial light, and a part of the first partial light extracted by the first attenuator.
  • a second attenuating part that reflects and takes out as the second partial light and transmits the first partial light other than the above-mentioned part and takes it out as the third partial light. . Is detected by detecting either the second partial light or the third partial light attenuated by the first attenuation rate, and detecting the amount of the second exposure light. In this case, when the other partial light attenuated by the second attenuation factor is detected, the partial light of the second exposure light is extracted and detected using one attenuation part. Compared with, the attenuation factor of the first attenuation part can be reduced, so that the optical efficiency can be improved. .
  • each exposure light source unit of the plurality of exposure light source units has a plurality of exposure light sources, and the third exposure light emitted from each exposure light source of the plurality of exposure light sources is focused, and the It is assumed that the third exposure light is emitted as the first exposure light, and the attenuation means attenuates the incident exposure light by a third attenuation rate that is smaller than the first attenuation rate.
  • the attenuation light obtained by attenuating the third exposure light emitted from the exposure light source with the third attenuation factor is detected. In such a case, it is possible to detect exposure light in a wider light amount range.
  • the light quantity of the second exposure light is detected, and when the light quantity of the second exposure light is not more than a predetermined target value, the first light quantity of the exposure light source unit is increased so that the light quantity of the second exposure light is increased.
  • the exposure light amount or the third exposure light amount of the exposure light source is adjusted, it is possible to irradiate the exposure surface with a more appropriate amount of the second exposure light.
  • the exposure light source characteristic data is acquired.
  • the light amount of the third exposure light of the exposure light source is adjusted again based on the characteristic data, for example, even when the exposure light source has deteriorated and its characteristics have changed. Therefore, it is possible to perform light amount control in consideration of the characteristic change.
  • the light quantity of the second exposure light is detected again, and when the light quantity of the second exposure light is below a predetermined target value, the light quantity of the third exposure light Obtains information on an exposure light source that is less than or equal to a predetermined target value, and based on the information on the exposure light source, the third light source of an exposure light source other than the exposure light source whose light amount of the third exposure light is less than or equal to a predetermined target value again.
  • the exposure light amount is adjusted, for example, even if the exposure light source fails and the third exposure light with the target light amount cannot be emitted, other exposure light sources By capturing with the third exposure light, it is possible to irradiate the second exposure light with an appropriate amount of light.
  • both the detection of the light amount of the second exposure light emitted from the exposure light emitting means should be performed. By doing so, it is possible to determine whether an abnormality has occurred in the exposure light emitting means or an abnormality in the irradiation means.
  • FIG. 1 is a perspective view showing the external appearance of an embodiment of the exposure apparatus of the present invention.
  • FIG. 2 is a perspective view showing a configuration of a scanner of the exposure apparatus shown in FIG.
  • FIG. 3A is a plan view showing an exposed area formed on the photosensitive material
  • FIG. 3B is a view showing an arrangement of exposure areas by each exposure head.
  • FIG. 4 is a perspective view showing a schematic configuration of an exposure head of the exposure apparatus shown in FIG.
  • FIG. 5 is a view showing a configuration of an exposure head and attenuation means of the exposure apparatus shown in FIG. Fig. 6 is a partially enlarged view showing the configuration of the digital micromirror device (D M D). 7A and 7B are explanatory diagrams for explaining the operation of D M D. FIG.
  • FIG. 8 is a perspective view showing a configuration of a fiber array light source.
  • Fig. 9 is a diagram showing a laser emission part in a fiber array light source.
  • FIG. 10 is a schematic configuration diagram of a laser module.
  • FIG. 11 is a block diagram showing an electrical configuration of the exposure apparatus shown in FIG.
  • FIG. 12 is a flowchart for explaining the operation of the exposure apparatus shown in FIG.
  • FIG. 13 is a flowchart for explaining the operation of the exposure apparatus shown in FIG.
  • FIG. 14 is a diagram showing an example of drive current / one light quantity characteristic data of the LD chip.
  • FIGS. 15A and B are views showing another embodiment of the exposure apparatus of the present invention. Preferred form for carrying out the invention
  • the exposure apparatus of the present invention is characterized by a method for detecting the amount of laser light. First, the overall configuration of the exposure apparatus will be described.
  • the exposure apparatus 10 includes a plate-shaped moving stage 14 that holds the sheet-like photosensitive material 12 by adsorbing to the surface, and is supported by four legs 16.
  • Two guides 20 extending along the stage moving direction are installed on the upper surface of the thick plate-shaped installation table 18.
  • the stage 14 is arranged so that the longitudinal direction thereof faces the stage moving direction, and is supported by the guide 20 so as to be reciprocally movable.
  • the exposure apparatus 10 is provided with a stage driving device (not shown) for driving the stage 14 as a moving means along the guide 20.
  • a U-shaped gate 22 is provided at the center of the installation table 18 so as to straddle the movement path of the stage 14. Each end of the U-shaped gate 2 2 is fixed to both side surfaces of the installation base 18.
  • a scanner 24 is provided on one side across the gate 22, and a plurality of (for example, two) sensors 26 for detecting the front and rear ends of the photosensitive material 12 are provided on the other side. ing.
  • the scanner 24 and the sensor 26 are respectively attached to the gate 22 and fixedly arranged above the moving path of the stage 14.
  • the scanner 24 and the sensor 26 are connected to a controller (not shown) that controls them.
  • the stage 14 is provided with an exposure surface measurement sensor 28 that detects the amount of laser light emitted from the scanner 24 to the exposure surface of the photosensitive material 12 when the exposure by the scanner 24 starts.
  • the exposure surface measurement sensor 28 is orthogonal to the stage moving direction at the end of the exposure surface side of the ground surface of the photosensitive material 12 in the stage 14. It is extended in the direction to do.
  • the scanner 24 includes 10 exposure heads 30 arranged in a substantially matrix of 2 rows and 5 columns.
  • each exposure head arranged in the m-th row and the n-th column is indicated, it is expressed as an exposure head 3 O mn .
  • Each exposure head 30 is attached to the scanner 24 so that the pixel row direction of an internal digital 'micromirror' device (DMD) 36 described later forms a predetermined tilt angle 0 with the scanning direction. ing. Therefore, exposure area 3 by each exposure head 30 2 is a rectangular area inclined with respect to the scanning direction. As the stage 14 moves, a strip-shaped exposed region 34 is formed in the photosensitive material 12 for each exposure head 30.
  • the exposure area by the individual exposure heads arranged in the m-th row and the n-th column is referred to as an exposure area 32 mn .
  • each of the nodes 30 is arranged with a predetermined interval (natural number times the long side of the exposure area, twice in this embodiment) in the arrangement direction. Therefore, exposure area 3 in the first row
  • each of the exposure heads 30 is a DMD 36 (US texts) as a spatial light modulation element that modulates incident light for each pixel unit in accordance with image data. Instrumentation).
  • This D M D 36 is connected to a controller having a data processing unit and a mirror drive control unit.
  • the data processing unit of this controller generates a control signal for driving and controlling each micromirror in the use area on the DMD 36 of each exposure head 30 based on the input image data.
  • the mirror drive control unit controls the angle of the reflection surface of each micromirror of the DM 36 of each exposure head 30 based on the control signal generated by the data processing unit. .
  • a fiber array in which the output end (light emitting point) of the optical fiber is arranged in a line along the direction that coincides with the long side direction of the exposure area 32.
  • a light source 3 8 a lens system 40 that collects the laser light emitted from the fiber array light source 3 8 and collects it on the DMD, and the laser light that has passed through the lens system 40 is DMD
  • Mirrors 42 reflecting toward 3 6 are arranged in this order.
  • the lens system 40 is schematically shown.
  • the lens system 40 passes through the condenser lens 4 4 for condensing the laser light as the condensed light emitted from the fiber array light source 3 8 and the condenser lens 4 4. It is composed of a mouth mirror 46 inserted in the optical path of the light, and an imaging lens 48 located in front of the mouth mirror 46, that is, on the mirror 42 side. It is.
  • the rod integrator 46 makes the laser beam emitted from the fiber array light source 38 enter the DMD 36 as a light beam that is close to parallel light and has a uniform beam cross-sectional intensity.
  • the laser beam emitted from the lens system 40 is reflected by the mirror 42 and irradiated onto the DMD 36 via the TIR (total reflection) prism 70.
  • the T I R prism 70 is omitted.
  • a photoelectric sensor SH for detecting the amount of laser light emitted from the fiber array light source 38, output from an LD module described later.
  • Photoelectric sensor SM for detecting the amount of laser light
  • photoelectric sensor SL for detecting the amount of laser light output from the LD chip, which will be described later, and part of the light transmitted through the condenser lens 44
  • An optical filter FL that partially reflects toward the photoelectric sensor S, an optical filter FM that transmits a portion of the reflected light reflected from the optical filter FL, and a portion that reflects toward the photoelectric sensor SM, and
  • the optical filter FH that transmits part of the reflected light reflected from the optical filter FM and reflects part of it toward the photoelectric sensor SH is provided.
  • the optical sensor SH can detect the largest light amount W, and the optical sensor SL can detect the smallest light amount W.
  • the optical sensor SM can detect the light amount W between the light amounts that can be detected by the optical sensor SH and the optical sensor SL.
  • the detectable range of an optical sensor is the minimum detectable range of that optical sensor. It may be considered as a range from the maximum light quantity to the maximum light quantity, or as a range in which linearity is guaranteed in the optical sensor.
  • the attenuating means in the claims comprises an optical filter FL, an optical filter FM, and an optical filter FH.
  • the attenuation means is configured by the three optical filters, and the three optical sensors are used.
  • the optical sensor has a wide detectable range
  • two optical filters are used.
  • the attenuation means may be configured using an optical filter, and detection may be performed using two optical sensors.
  • the reflectance of the optical filter FL is minimized among the three optical filters, that is, the transmittance of the optical filter FL is maximized. Can be further improved.
  • the reflected light reflected by the optical filter FM is received by the optical filter FH.
  • the transmitted light transmitted through the optical filter FM is changed. Light may be received by the optical filter FH.
  • the sealing member portion on the optical path of the reflected light needs to be formed of glass or the like so that the reflected light reflected from the optical filter FL is guided to the optical sensors SL, SM, and SH.
  • an imaging optical system 50 that images the laser beam reflected by the DMD 36 on the photosensitive material 12 is disposed on the light reflecting side of the DMD 36.
  • This imaging optical system 50 is schematically shown in FIG. 4, but as shown in detail in FIG. 5, a first imaging optical system comprising lens systems 5 2 and 5 4 and a lens system 5 7 , 58, a second imaging optical system, a microphone aperture lens array 55 inserted between these imaging optical systems, and an aperture array 59.
  • the above microlens array 55 is attached to each DMD 36 pixel.
  • a number of corresponding microphone mouth lenses 5 5 a are arranged.
  • the micro lens 5 5 a has a focal length of 0.19 mm and an NA (numerical aperture) of 0.11.
  • the aperture array 59 is formed by forming a large number of apertures 59a corresponding to the respective microphone lenses 55a of the microlens array 55.
  • the first imaging optical system enlarges the image by the DMD 36 three times and forms an image on the microlens array 55.
  • the second imaging optical system enlarges the image passing through the microlens array 55 by 1.67 and forms an image on the photosensitive material 12 and projects it. Therefore, as a whole, the image by the DMD 36 is magnified 5 times and formed on the photosensitive material 12 and projected.
  • a prism pair 72 is disposed between the second imaging optical system and the photosensitive material 12.
  • the prism pair 72 can change the optical path length by changing the thickness of the glass on the optical axis by shifting in the surface direction of the surfaces in contact with each other, thereby adjusting the focus of the image on the photosensitive material 12. It can be performed.
  • photosensitive material 12 is sub-scan fed in the direction of arrow Y.
  • the DMD 36 is a mirror device in which a large number of micromirrors 36a constituting pixels (pixels) are arranged in a lattice pattern on an SRAM cell (memory cell) 36b.
  • Each micromirror 36a is supported by a support column, and a material having high reflectivity such as aluminum is deposited on the surface thereof.
  • each micromirror 3 6a supported by the column becomes It tilts to one of the soil ⁇ degrees (for example ⁇ 10 degrees) with respect to the substrate side on which the DMD 36 is placed with the diagonal line as the center line.
  • Fig. 7 ⁇ ⁇ shows a state tilted to + ⁇ degrees when the micromirror 36 a is in the on state
  • Fig. 7 ⁇ ⁇ shows a state tilted to _ ⁇ degrees when the micromirror 36a is in the off state. Therefore, by controlling the inclination of the micro mirror 36a in each pixel of the DMD 36 as shown in FIG. 6 according to the image signal, the laser light B incident on the DMD 36 is changed to each micro mirror ⁇ 36 a Reflected in the tilt direction.
  • Figure 6 shows an enlarged view of a part of DMD 3 6 so that each micromirror 3 6 a has + Q; Or an example of the state controlled by 1 degree is shown.
  • the on / off control of each micromirror 36 a is performed by the controller connected to the DMD 36.
  • a light absorber (not shown) is arranged in the direction in which the laser light reflected by the off-state micromirror 36 a travels.
  • the fiber array light source 3 8 includes a plurality of (for example, 14) LD modules 60, and each LD module 60 has one end of the first multimode optical fiber 62. Are combined.
  • the other end of the first multimode optical fiber 62 is coupled with a second multimode optical fiber 64 having a smaller cladding diameter than the first multimode optical fiber 62.
  • the ends of the second multimode optical fiber 64 opposite to the first multimode optical fiber 62 are arranged along the direction orthogonal to the scanning direction.
  • the laser emission parts 66 are arranged in two rows.
  • the laser emitting portion 66 composed of the end of the second multimode optical fiber 64 is sandwiched and fixed between two support plates 68 having a flat surface.
  • a transparent protective plate such as glass be disposed on the light emitting end face of the second multimode optical fiber 64 for protection.
  • the light exit end face of the second multimode optical fiber 64 has a high light density and is likely to collect dust and easily deteriorate.
  • the protection plate as described above prevents the dust from adhering to the end face. In addition, the deterioration can be delayed.
  • the LD module 60 is composed of a combined laser light source (fiber light source) shown in FIG.
  • the combined laser light source includes a plurality of (for example, seven) LD chips LD 1, LD 2, LD 3, LD 4, LD 5, LD 6, and LD 7 arranged and fixed on a heat block 80, Collimator lenses 8 1, 8 2, 8 3, 84, 8 5, 8 6 and 8 7 provided corresponding to each of the LD chips LD 1 to LD 7, and one condensing lens 90 It consists of a single first multimode optical fiber 62 and force.
  • the number of semiconductor lasers is not limited to seven, but other numbers may be adopted.
  • LD chips LD 1 to LD 7 are chip-like lateral multimode or single mode GaN semiconductor lasers, all of which have a common oscillation wavelength (for example, 405 nm) and have a maximum output of all. Common (for example, 100 mW for multimode lasers and 30 mW for single mode lasers).
  • LD chips LD 1 to LD 7, 3 5 0 ⁇ ! A laser having an oscillation wavelength other than the above-mentioned 4 5 nm may be used in a wavelength range of ⁇ 4 50 nm.
  • the exposure apparatus is provided with an overall control unit 100 that controls the entire apparatus, and a modulation circuit 10 0 1 is connected to the overall control unit 100 and modulated.
  • the circuit 1 0 1 is connected to a controller 1 0 2 that controls the DMD 3 6.
  • the overall control unit 100 is connected to an LD drive circuit 103 that drives the LD chips LD 1 to LD 7.
  • a stage driving device 104 for driving the stage 14 is connected to the overall control unit 100.
  • the LD drive circuit 10 3 can drive and control the LD chips LD 1 to LD 7 independently based on a control signal from the overall control unit 100, and each has different timing from each LD chip. With this, laser light can be emitted.
  • the overall control unit 100 0 receives an electrical signal corresponding to the amount of laser light detected by the photoelectric sensors SL, SH, SM and the exposure surface measuring sensor 28. Predetermined control is performed according to the input electric signal. The control will be described in detail later.
  • a module replacement instruction unit 10 5 that outputs an LD module 60 replacement instruction, an exposure head maintenance instruction that outputs an exposure head 30 cleaning instruction Part 1 0 6 is connected.
  • laser light is emitted from all of the LD chips LD 1 to LD 7 in the LD module 60 of the fiber array light source 38 based on a control signal from the LD drive circuit 103.
  • the laser beams emitted from the LD chips LD 1 to LD 7 are collimated by the corresponding collimator lenses 8 1 to 87, respectively.
  • the collimated laser light is collected by the condenser lens 90 and focused on the incident end face of the core 6 2 a of the first multimode optical fiber 62. Then, the laser beam focused by the condensing lens 90 is incident on the core 62a of the first multimode optical fiber 62, propagates, and is combined with one laser beam to be the first The light enters the second multimode optical fiber 64 coupled to the output end of the multimode optical fiber 62, propagates, and is output from the laser output unit 66.
  • the laser beam emitted from the laser emission part 6 6 of the fiber array light source 3 8 is a lens system.
  • the laser light incident on 40 and transmitted through the lens system 40 is reflected by the mirror 4 2 toward the DMD 3 6 and spatially modulated by the DMD 3 6, and then the TIR prism 70 and the imaging optical system 5
  • the exposure surface 28a of the exposure surface measurement sensor 28 installed on the stage 14 through the 0 and the pair prism 72 is irradiated onto the exposure surface 28a (S10).
  • the exposure surface measurement sensor 28 is irradiated with laser light, and the amount of laser light emitted from the fiber array light source 38, that is, emitted from all LD modules 60.
  • the amount of laser light L is measured by the photoelectric sensor SH (S 1 2). Specifically, a part of the laser light L collected by the condenser lens 44 is reflected by the optical filter FL, a part of the reflected light L 1 is reflected by the optical filter FM, and the reflected light. Part of L 2 is reflected by the optical filter FH, and the reflected light L 3 is photoelectrically converted by the photoelectric sensor SH, and the light quantity r P SH is detected as an electrical signal. Then, the electrical signal is output to the overall control unit 100, and the overall control unit 100 calculates a deterioration rate R1 expressed by the following equation. And the deterioration rate R 1 is
  • the deterioration rate R 1 is 5% or more, it is further confirmed whether or not the deterioration rate R 1 is 10% or less (S 1 8), and the deterioration rate R 1 force S 10 0% If it is greater than the threshold value, the light quantity of each LD module 60 is measured by the photoelectric sensor SM (S 20). More specifically, the LD chip LD 1 to LD 7 of each LD module 60 is driven by the LD drive circuit 60 control signal, and the LD 7 is driven for each LD module 60, and from the laser emitting unit 6 6 of the fiber array light source 3 8 Laser light for each LD module 60 is emitted.
  • a part of the laser light M output from each LD module 60 reflects the optical filter FL, a part of the reflected light M l reflects the optical filter FM, and a part of the reflected light M 2
  • the light passes through the optical filter FH, the transmitted light M3 is photoelectrically converted by the photoelectric sensor SM, and the amount of light rPSM is detected as an electrical signal.
  • the detected light amount r P SM of the laser light of the laser module 6 each 0 are sequentially electric signals corresponding to the amount of that is outputted to the total control unit 1 0 0. Then, the overall control unit 100 calculates a deterioration rate R 2 represented by the following equation for each laser module 60.
  • the overall control unit 100 is connected to the module replacement instruction unit 10 so that the module replacement instruction unit 1 0 5 outputs an LD module 60 replacement instruction.
  • a control signal is output to 1 0 5 (S 2 2, S 2 4).
  • the output of the replacement instruction can be output by any method as long as the LD module 60 whose deterioration rate is greater than 50% is specified and the replacement instruction is output, and a message is displayed.
  • a light emitting means such as an LED provided corresponding to the LD module 60 may emit light, or sound may be output.
  • the degradation rate R2 is 50% or less, the degradation rate R is 1 in S 1 8 If it is 0% or less, the total control unit 100 and the LD drive circuit 10 0 3 drive the LD chips LD 1 to LD 7 so that the amount of laser light output from each LD module 60 increases.
  • the current Ia is controlled (S 26). Specifically, the calculated amount measured by the photoelectric sensor SH r P SH drive current I a by the following equation based on the, the calculated driving current LD chip LD. 1 to: flowed into LD 7.
  • the LD chips LD1 to LD7 of all the LD modules 60 are driven, and in the same manner as above,
  • the amount of laser light emitted from the fiber array light source 38 is detected as an electrical signal by the photoelectric sensor SH (S 28).
  • the electrical signal is output to the overall control unit 100, and the overall control unit 100 calculates an adjustment error e 1 represented by the following expression based on the electrical signal (S 3 0).
  • Adjustment error e 1 1-r P S H / P SH
  • the light amounts of the LD chips LD 1 to LD 7 are measured by the photoelectric sensor SL (S 3 2).
  • the LD chips LD 1 to LD 7 of the LD module 60 are sequentially driven one by one by the drive control of the overall control unit 100 and the LD drive circuit 103, and the fiber array light source 38 emits laser light.
  • Laser light for each LD chip is emitted from the unit 66.
  • a part of the laser light N output from each LD chip reflects the optical filter FL, a part of the reflected light N 1 passes through the optical filter FM, and the transmitted light N 2 is photoelectrically generated by the photoelectric sensor SL.
  • the amount of light r P SL is converted and detected as an electrical signal. Then, the light amount r P SL of the laser light for each LD chip is sequentially detected, and an electric signal corresponding to the light amount is output to the overall control unit 100.
  • drive current-light quantity characteristic data is acquired by the overall control unit 100 as shown in FIG. 14 for each LD chip (S 34). Then, based on the drive current / single light quantity characteristic data of each LD chip, the overall controller 100 obtains a drive current such that each LD chip emits a preset light quantity target value PSL , This drive current information is output to the LD drive circuit 103.
  • the characteristic data may be acquired for all of the LD chips, or only for the LD chip whose light intensity is equal to or less than the preset target value P S L. You may make it acquire characteristic data. Then, only the LD chip from which the characteristic data has been acquired may be obtained as described above.
  • the overall control unit 100 recognizes that the LD chip has failed and acquires the failure information. A message may be displayed based on this failure information, or a light emitting means such as an LED provided for the LD chip may be made to emit a replacement instruction or a warning.
  • the general control circuit 100 has another normal LD so that the insufficient light quantity in the LD chip is captured by another normal LD chip.
  • the drive current of the chip may be obtained, and information on the drive current may be output to the LD drive circuit 103. At this time, the failed LD chip may not be operated, and the light amount of the failed LD chip may be set to 0 to obtain the drive current of the other LD chips. .
  • the LD drive circuit 10 3 receives the drive current from the LD drive circuit 10 3 to the LD chips LD 1 to LD 7 based on the drive current information output from the overall control circuit 100 as described above.
  • the light intensity is adjusted by flowing (S 3 6).
  • the exposure surface measurement sensor 28 detects each exposure head 30.
  • detected light amount r P R is an electrical signal corresponding to the light amount r P R is output to the overall controller 1 0 0 (S 3 8) .
  • the overall controller 1 0 0 is based on the quantity r P R detected in the exposure head 3 each 0, calculates an adjusted error e 2 represented by the following formula, the adjustment error e 2 3 If it is smaller than%, the drive current information for each LD chip obtained as described above is used.
  • the initial value I s is updated as the initial value I s of the LD chip, the laser light quantity adjustment is finished, and exposure to the photosensitive material 12 as described later is started (S 40, S 4 2).
  • the adjustment error e 2 calculated as described above is 3% or more, it is determined whether or not the adjustment error e 2 is 10% or less (S 44). If 2 is greater than 10%, a cleaning maintenance instruction for the exposure head 30 is output (S46).
  • the output of the cleaning maintenance instruction for the exposure head 30 is determined by any method as long as the exposure head 30 having an adjustment error e2 larger than 10% is specified and the cleaning maintenance instruction is output. Of course, a message may be displayed, or a light emitting means such as an LED provided corresponding to the exposure head 30 may emit light, or sound may be output.
  • the light amount adjustment of the LD chips LD1 to LD7 is performed again (S48). Specifically, based on the light amount r P R measured by the exposure surface measurement sensor 28 as described above and the initial value I s updated as described above, the drive current is calculated by the following equation: I b is calculated, and this drive current I b is passed through the LD chips LD 1 to LD 7 by the LD drive circuit 10 3.
  • the light amount of the laser light emitted from each exposure head 30 is again measured by the exposure surface measurement sensor 28 (S 50). Then, the repeat adjustment error e 2 is calculated, and it is determined whether or not the adjustment error e 2 is 3% or less. If the adjustment error e 2 is greater than 3%, the same as above is performed.
  • the adjustment error e 2 is 3% or less
  • the light amount when all the LD modules 60 are driven is detected by the photoelectric sensor SH in the same manner as described above, and the LD module 6
  • the light amount of the laser beam for each 0 is detected by the photoelectric sensor SM (S 5 6), and the light amount adjustment is completed (S 5 8).
  • the initial value Is is updated to the drive current Ib calculated during the light amount adjustment performed in S48, and the target values PSH and PSM of the light amount measured by the photoelectric sensors SH and SM are It is updated to the amount of light measured in S 56 (S 60).
  • each exposure head 30 After the amount of laser light emitted from each exposure head 30 is adjusted as described above, exposure to the actual photosensitive material is started.
  • image data corresponding to the exposure pattern is input from the modulation circuit 101 shown in FIG. 11 to the controller 102 of the DMD 36, and is temporarily stored in the frame memory.
  • This image data is data that represents the density of each pixel composing the image as binary values (whether or not dots are recorded).
  • stage 14 having the photosensitive material 12 2 adsorbed on its surface is moved along the guide 20 from the upstream side to the downstream side of the gate 22 at a constant speed by the stage driving device 104 shown in FIG.
  • stage 14 passes below gate 2 2 and the tip of photosensitive material 12 is detected by sensor 26 attached to gate 22, image data stored in the frame memory is stored for multiple lines.
  • a control signal is generated for each exposure head 30 based on the image data read out one by one and based on the image data read out by the data processing unit.
  • each of the micro mirrors of the DM D 36 is controlled on and off for each exposure head 30 based on the generated control signal by the mirror drive control unit.
  • the fiber light source 3 8 When the fiber light source 3 8 irradiates the DMD 3 6 with laser light, the laser light reflected when the micromirror of the DMD 3 6 is in the on state is applied to the photosensitive material 14 by the lens systems 40, 50. Imaged.
  • fiber array light source 3 8 The laser beam emitted from each pixel is turned on and off for each pixel, and the photosensitive material 12 is exposed in a pixel unit (exposure area 3 2) substantially equal to the number of pixels used in the DMD 36.
  • the photosensitive material 12 is moved at a constant speed together with the stage 14, whereby the photosensitive material 12 is sub-scanned in the direction opposite to the stage moving direction by the scanner 24, and each exposure head 30. A strip-shaped exposed region 34 is formed.
  • the stage 14 is moved to the guide 20 by the stage driving device 10 04. Along the uppermost stream side of the gate 22, and then moved again along the guide 20 from the upstream side of the gate 22 to the downstream side at a constant speed.
  • the attenuating means in the exposure apparatus of the present invention is not limited to the configuration of the above-described embodiment, and may form attenuated light attenuated from the incident exposure light with different attenuation factors.
  • any other configuration may be adopted.
  • the optical filter is fixed. However, when a physical space is allowed, a mechanism for switching the optical filter to mechanical is provided, and detection is performed by one photoelectric sensor. Also good. Specifically, for example, as shown in FIGS. 15A and 15B, a rotating optical filter 70 having optical filters 70 a, 70, and 70 c having different transmittances, and a rotating optical filter 70.
  • FIG. 15B is a view of the rotating optical filter 70 in FIG. 15A as viewed from the direction of the arrow A. .
  • the electrical signal output from the photoelectric sensor is amplified by an amplifier circuit and extracted to improve the SZN of the electrical signal. You may make it make it. Further, when the light quantity of the laser light is detected by a plurality of photoelectric sensors as in the above embodiment, a different amplification factor may be set for each optical sensor. Further, a circuit capable of switching these may be provided.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un dispositif d'exposition qui inclut plusieurs modules laser pour synthétiser les rayons laser émis par plusieurs diodes laser pour que les rayons laser émis par les modules laser convergent pour obtenir une lumière convergente, appliquée à une surface d'exposition. L'intensité lumineuse du rayon laser émis à partir de chacune des diodes laser et du module laser et l'intensité lumineuse de la lumière convergente sont détectées par un type de capteur photoélectrique. Tout en détectant l'intensité lumineuse du rayon laser émis à partir d'une diode laser, le rayon laser réfléchi par un filtre optique (FL) et se transmettant à travers un filtre optique (FM) est détecté. Lorsque l'intensité lumineuse du rayon laser émise à partir d'un module laser est détectée, le rayon laser réfléchi par les filtres optiques (FL, FM) et se transmettant à travers un filtre optique (FH) est détecté. Lorsque l'intensité lumineuse de la lumière convertie est détectée, le rayon laser réfléchi par les filtres optiques (FL, FM, FH) est détecté. Il est ainsi possible de détecter des rayons laser atténués avec différents rapports d'atténuation.
PCT/JP2005/015306 2004-08-20 2005-08-17 Procédé et dispositif d'exposition WO2006019178A1 (fr)

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JP2004240601A JP2006060032A (ja) 2004-08-20 2004-08-20 露光方法および装置
JP2004-240601 2004-08-20

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN101862908A (zh) * 2009-04-03 2010-10-20 肖特公开股份有限公司 工件分离方法和设备

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* Cited by examiner, † Cited by third party
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TWI401538B (zh) * 2007-03-28 2013-07-11 Orc Mfg Co Ltd Exposure drawing device
JP4885029B2 (ja) * 2007-03-28 2012-02-29 株式会社オーク製作所 露光描画装置

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JPH0631980A (ja) * 1992-05-18 1994-02-08 Ricoh Co Ltd 半導体レーザアレイ記録装置
JPH08227159A (ja) * 1994-11-11 1996-09-03 Carl Zeiss:Fa 未処理製品の表面を照射する方法
JPH09211278A (ja) * 1996-02-05 1997-08-15 Asahi Optical Co Ltd 光結像装置の偏光調整方法
JP2003167209A (ja) * 2001-11-30 2003-06-13 Hitachi Printing Solutions Ltd 光記録装置
JP2003318096A (ja) * 2002-04-25 2003-11-07 Dainippon Screen Mfg Co Ltd 光ビーム照射装置
JP2003337427A (ja) * 2002-05-20 2003-11-28 Fuji Photo Film Co Ltd 露光装置
JP2003345030A (ja) * 2002-05-23 2003-12-03 Fuji Photo Film Co Ltd 露光装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0631980A (ja) * 1992-05-18 1994-02-08 Ricoh Co Ltd 半導体レーザアレイ記録装置
JPH08227159A (ja) * 1994-11-11 1996-09-03 Carl Zeiss:Fa 未処理製品の表面を照射する方法
JPH09211278A (ja) * 1996-02-05 1997-08-15 Asahi Optical Co Ltd 光結像装置の偏光調整方法
JP2003167209A (ja) * 2001-11-30 2003-06-13 Hitachi Printing Solutions Ltd 光記録装置
JP2003318096A (ja) * 2002-04-25 2003-11-07 Dainippon Screen Mfg Co Ltd 光ビーム照射装置
JP2003337427A (ja) * 2002-05-20 2003-11-28 Fuji Photo Film Co Ltd 露光装置
JP2003345030A (ja) * 2002-05-23 2003-12-03 Fuji Photo Film Co Ltd 露光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101862908A (zh) * 2009-04-03 2010-10-20 肖特公开股份有限公司 工件分离方法和设备

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