WO2006015763A1 - Procede de tirage en creuset vertical pour produire un corps en verre presentant une teneur elevee en acide silicique et dispositif pour la mise en oeuvre dudit procede - Google Patents

Procede de tirage en creuset vertical pour produire un corps en verre presentant une teneur elevee en acide silicique et dispositif pour la mise en oeuvre dudit procede Download PDF

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Publication number
WO2006015763A1
WO2006015763A1 PCT/EP2005/008343 EP2005008343W WO2006015763A1 WO 2006015763 A1 WO2006015763 A1 WO 2006015763A1 EP 2005008343 W EP2005008343 W EP 2005008343W WO 2006015763 A1 WO2006015763 A1 WO 2006015763A1
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WO
WIPO (PCT)
Prior art keywords
crucible
sio
distributor
grain
layer
Prior art date
Application number
PCT/EP2005/008343
Other languages
German (de)
English (en)
Inventor
Rainer Berg
Helmut Leber
Nigel Whippey
Lothar Hüfner
Original Assignee
Heraeus Quarzglas Gmbh & Co. Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Quarzglas Gmbh & Co. Kg filed Critical Heraeus Quarzglas Gmbh & Co. Kg
Publication of WO2006015763A1 publication Critical patent/WO2006015763A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B3/00—Charging the melting furnaces
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
    • C03B17/04—Forming tubes or rods by drawing from stationary or rotating tools or from forming nozzles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/02—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
    • C03B5/033—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by using resistance heaters above or in the glass bath, i.e. by indirect resistance heating
    • C03B5/0336—Shaft furnaces

Definitions

  • the present invention relates to a process for producing a glass body having a high silica content by drawing from a crucible, comprising introducing SiO 2 grains into a crucible to form a SiO 2 grain layer in an upper region of the crucible, heating the SiO 2 . Graining in the crucible to form a softened, homogeneous glass mass in a lower region of the crucible, continuously withdrawing the softened, homogeneous glass mass via a bottom opening of the crucible to form a glass strand, and then cutting the glass strand to the glass body.
  • the invention relates to a device for carrying out the
  • Crucible pulling method comprising a crucible for receiving SiO 2 grain in an upper region and for receiving a homogeneous glass mass in a lower region thereof, with a feed device for supplying the SiO 2 grain, with a heating device for heating the crucible, and with a trigger for the continuous removal of a glass strand from the softened, homogeneous glass mass through a bottom opening of the crucible.
  • a glass having a high silica content is understood as meaning a glass which has an SiO 2 content of at least 90% by weight.
  • quartz glass even at temperatures close to the sublimation temperature of SiO 2 , a comparatively high viscosity is still present.As a result of their high temperatures and viscosities, quartz glass melts can not readily be homogenized by means normally used in glass processing . In the
  • BEST ⁇ TSGUNGSKOPIE Quartz glass could not be produced with sufficient quality and cost-effectiveness for mass applications, and therefore for large-scale glass products predominantly lower melting glasses would be used, such as borosilicate glasses or soda-lime glasses.
  • the distribution devices otherwise used for refining glass melts of the latter glasses are not suitable for the homogenization of quartz glass melts, as bubbles generated in the glass melt due to the movement of the distributor device can no longer be removed during the drawing process due to the high viscosity.
  • Tiegelzieh compiler for the production of cylindrical components made of quartz glass, especially in the form of tubes and rods with any cross-sectional profile have long been known. Particular attention is paid to avoid inhomogeneities in the stripped glass strand.
  • a hopper which protrudes into the crucible and whose lower end terminates above the surface of the viscous glass mass (hereinafter referred to as the "melt surface"), thereby forming a pour cone of the supernatant floating on the melt surface , granular SiO 2 - raw material.
  • the present invention is therefore based on the object to provide a cost-effective method which improves the melting behavior of the high-siliceous grain, and thereby enables the production of homogeneous glass body from a high-siliceous glass by pulling from the melt. Furthermore, the invention has for its object to provide a structurally simple and with little effort to implement device for performing the method.
  • this object is achieved on the basis of the above-mentioned method according to the invention in that the SiO.sub.2 flow is distributed in contact with a mechanical device acting on it in the crucible.
  • the distributor device causes a more uniform, more horizontal distribution of the SiO 2 grain on the enamel surface.
  • an existing pour cone is substantially eliminated, or the formation of a pronounced bulk cone is prevented.
  • the distributor device is equipped with a mechanical distributor element, which preferably acts from above - as an alternative or in addition to it from a side wall of the crucible - homogenizing and distributing on the SiO 2 -Kömungs slaughter.
  • a mechanical distributor element which preferably acts from above - as an alternative or in addition to it from a side wall of the crucible - homogenizing and distributing on the SiO 2 -Kömungstik.
  • the distributor device acts to compact the SiO 2 grain.
  • the SiO 2 -Kömungstik is compressed prior to melting beyond the degree of their actual bulk density out, which contributes to a reduction of gas inclusions and thus to avoid blistering and to a higher homogeneity of the glass melt.
  • the distributor device In contrast to the known methods for refining low-viscosity glass melts using a distributor device, the distributor device primarily acts on the SiO 2 grain layer forming on the melt surface; However, it does not dive into the actual molten glass or at most slightly. A mechanical one Mixing within the glass melt would lead to bubbles or other inhomogeneities that would not be completely eliminated within the usual process times and would therefore lead to errors in the final product.
  • the distributor device is operated continuously during the drawing process, at fixed time intervals or as required.
  • the distribution of the SiO 2 grain is already homogenized by distributing the distributor device from above or from the side acting on the SiO 2 grain. Preferably, however, at least a part of the distributor device completely or partially immersed in the SiO 2 -Kömung. As a result, a certain mixing within the SiO 2 grain and thereby a more homogeneous melting is achieved.
  • Graining forms a transition region between the SiO 2 -Kömungstik and the homogeneous melt phase, in which a part of the SiO 2 -Kömung is already melted.
  • the raw material is present as still having grain structure, but hardly pourable mass.
  • the use of the distributor device primarily aims at improving the homogeneity of the molten glass. It has been found that in this case a uniform transition of the graining layer to the homogeneous softened glass mass within a transitional area is of essential importance. For example, an approximately equal length of residence of the SiO 2 grain in the transition region, regardless of the crucible position, is desirable. For the duration of residence, the viscosity, the thickness distribution of the transition region and the flow conditions within the crucible play a decisive role.
  • the flow conditions essentially by the axial and radial temperature and Viscosity course within the crucible, are determined by the position of the sampling point and the amount of melt removed via the bottom outlet and by a Gren ⁇ Anlagenbericht on the crucible inner wall, can be changed due to the complex relationships only partially in the direction of a more uniform residence time of the grain.
  • the radial thickness distribution of the transition region can be set comparatively easily by the manner of distributing the SiO 2 grain layer by means of the distributor device.
  • a method is particularly preferred in which the Si ⁇ 2 -Kö tion layer, a moving distributor element of the distributor device acts to form a predetermined radial distribution profile.
  • a radial distribution profile is understood as meaning a height profile of the SiO 2 granulation layer in a plane extending parallel to the crucible center axis.
  • particularly suitable embodiments of the method according to the invention will be described with regard to the resulting radial distribution profile.
  • the SiO 2 grain layer is distributed by means of the distributor element in a horizontal plane.
  • a distribution profile with a horizontal free surface is impressed on the SiO 2 granulation layer by means of the distributor element.
  • a distributor element which meshes parallel to the surface of the melt can be used, which ensures a homogeneous horizontal distribution of the SiO 2 grain on the enamel surface. In addition, an unwanted, strong vertical mixing of grain and melt phase is avoided.
  • a trough-shaped distribution profile is impressed on the SiO 2 granulation layer by means of the distributor element.
  • a depression of the granulation layer forms in the region of the center of the crucible.
  • the lower weight of the grain in the middle of the crucible influences the course of the flow and the residence time of the grain in the transition area.
  • the SiO 2 grain layer is impressed by the distributor element a bale-shaped distribution profile.
  • the distributor element is moved above the glass mass at a predetermined distance along the crucible inner wall.
  • Crucible cross section sought. However, contact between the moving distributor element and the metallic crucible wall is not desired to avoid jamming or jamming.
  • a typical and suitable distance between distributor element and crucible wall is in the range of 1 mm to 25 mm, preferably between 2 and 15 mm.
  • the above-explained embodiments of the distribution profile of the granulation layer can be adjusted by the geometric shape of the distributor element and by its trajectory within the crucible.
  • the location of the preferred action of the distributor element on the SiO 2 grain plays an important role for the homogenization of the crucible contents, since higher shear forces occur there, which can have an effect on the flow behavior in conjunction with a stronger compaction of the grain.
  • the distributor device preferably acts on a region of the granulation layer, which is located in extension along the crucible center axis above the bottom opening.
  • the distributor device acts on a region of the granulation layer near the crucible inner wall.
  • the formation of bubbles or streaks in the melt phase can no longer be corrected if the distributor device dips too deeply into the homogeneous glass mass.
  • the distributor device therefore preferably does not dip into the homogeneous glass mass at all.
  • the temperature-stressed parts of the distributor device consist of high-temperature-resistant materials, such as molybdenum, tungsten, oxide ceramics, such as Al 2 O 3 , nitrides, carbides and / or quartz glass.
  • Components of the distribution device made of the two metals molybdenum and tungsten are characterized by a high thermal stability. These also withstand strong shear forces, and are therefore particularly suitable for mixing melt phase-containing SiO 2 -Kömungsmassen that are only slightly free-flowing, as they are present for example in the transition region.
  • Components of the quartz glass distributor consist of "inherent material" of the quartz glass melt and are therefore preferred for applications in which high purity of the quartz glass component is important.
  • the distribution device may also comprise components made of other materials or of combinations of said materials.
  • a distributor device which has a distributor element made of molybdenum or tungsten, of which at least partial regions come into contact with the SiO 2 grain layer, and that these partial regions are provided with a protective layer.
  • a distributor device which is equipped with an optical conductor accessible from outside the crucible and which can be used for pyrometrically detecting a temperature within the crucible.
  • a process-relevant temperature within the crucible for example the temperature of the SiO 2 grain or the temperature of the SiO 2 melt, is detected by way of the light conductor by means of a pyrometer, which is arranged outside the crucible. This allows a more accurate process control.
  • a thermocouple which can be brought up to the granulation layer via a bore of the distributor device.
  • the method according to the invention has an advantageous effect, in particular, when the SiO 2 grain is introduced into the crucible together with a dopant.
  • the distributor device also effects thorough mixing of the SiO 2 grain in the crucible and thus counteracts segregation, as otherwise observed upon addition of a dopant. This avoids the formation of inhomogeneities in the molten glass.
  • the introduction of the dopant takes place in that the quartz glass of the SiO 2 grain is provided with a dopant and / or in that the dopant is mixed in advance with SiO 2 grain.
  • the abovementioned object is achieved on the basis of a device of the type mentioned at the outset in that a mechanical distributor device is arranged in the crucible, which distributes it from above in contact with the SiO 2 grain.
  • the distributor device is equipped with a mechanical distributor element, which acts on the SiO 2 grain layer either from above or from a side wall of the crucible.
  • the distributor device preferably has a distributor element which, when moving, in particular when rotating about a crucible central axis, executes a movement path in a horizontal plane in the upper region of the crucible.
  • the movement and shape of the distributor element determine the radial
  • the distributor element acts on a side wall of the crucible, it is, for example, a slide which can be moved above the molten glass.
  • the distributor element acts similarly to a stirrer, a distributor screw or a whirl. In the simplest case, it is a one-axis or multiaxial cylinder mounted on a vertical rotary shaft and rotating in the horizontal about the rotary shaft.
  • the one cylinder it is also possible to provide a plurality of cylinders, for example arranged in a cruciform or star shape, or structures which rotate in the horizontal, such as a spiral, a helix, a grid, a spoked wheel, a disk or the like.
  • the distribution of the grain can also be achieved by a simple spreading, tilting or pivoting movement of the distributor element. It is only important that the distributor element moves above the molten glass and, in a continuous melting process, allows the SiO 2 granules coming from above to pass to the molten surface.
  • the distributor device has a distributor element, whose lower side facing the SiO 2 flow is shaped in such a way that it circumscribes an envelope having a concave curvature on rotation about a crucible center axis.
  • a depression of the granulation layer forms in the region of the center of the crucible. This is achieved by a corresponding curvature of the distributor element.
  • the distributor device has a distributor element whose underside facing the SiO 2 flow is shaped in such a way that, when rotating about a crucible center axis, it circumscribes an envelope with a convex curvature.
  • the temperature-stressed parts of the distributor device consist of high-temperature-resistant materials, such as molybdenum, tungsten, oxide ceramics, such as Al 2 O 3 , nitrides, carbides and / or quartz glass.
  • Components of the distribution device made of the two metals molybdenum and tungsten are characterized by a high thermal stability. These also withstand high shear forces, and are therefore particularly suitable for mixing melt phase-containing SiO 2 granules, which are only slightly free-flowing, as they are present for example in the transition region.
  • Components of the quartz glass distribution device have the advantage that they consist of "inherent material" of the quartz glass melt, which are therefore preferred for applications in which high purity of the quartz glass component is important.
  • the distributor device can also be composed of other materials or of combinations having said materials.
  • a distributor device which has a distributor element made of molybdenum or tungsten, of which at least partial regions come into contact with the SiO 2 grain layer, and in that these partial regions with a Protective layer of ceramic, SiO 2 or refractory metal are provided.
  • the distributor device has a distributor element, which is designed as a light guide.
  • the light guide is, for example, a rod made of quartz glass, which can simultaneously serve as a holding rod for a distributor element rotating in the crucible, and whose upper end protrudes from the crucible.
  • the quartz glass rod can also be surrounded by a jacket made of another material, for example a jacket tube made of molybdenum, tungsten or Al 2 O 3.
  • a thermocouple can be inserted into the bore of the jacket tube.
  • the distributor device is preferably connected to a height adjustment device, by means of which the working height of the distributor device is adjustable in the direction of the crucible central axis.
  • FIG. 1 shows a first embodiment of the device according to the invention in a side view
  • Figure 2 shows a second embodiment of the device according to the invention in a side view
  • Figure 3 shows a third embodiment of the device according to the invention in a side view.
  • FIG. 1 shows how SiO 2 grain 3 is continuously filled into a crucible 1 made of tungsten via a plurality of feed nozzles 2 .
  • the crucible 1 possesses a bottom outlet opening 4 through which molten quartz glass emerges and is withdrawn as a strand 16.
  • the crucible 1 is closed at the top with a cover 7, through which the supply nozzle 2 protrude into the crucible 1.
  • a resistance heating element 8 is arranged around the crucible. The heating element 8 is surrounded to the outside by a heat insulation 9.
  • the space between the heating element 8 and the crucible outer wall is rinsed with a hydrogen-containing inert gas, which is supplied via the nozzles 10 and 15 and discharged in the region of the lower end of the crucible 1.
  • a hydrogen-containing inert gas supplied via the nozzles 10 and 15 and discharged in the region of the lower end of the crucible 1.
  • a helium-hydrogen gas mixture is introduced via an inlet 14 into the crucible interior 5.
  • the stirring tool 11 comprises a holding rod 21, which protrudes through an opening of the lid 7 in the central axis 18 from above into the crucible 1, and which is rotatable about the central axis 18 by means of a rotating device 27 acting on its upper end.
  • the holding rod consists of a coaxial arrangement of a molybdenum cladding tube 19 with an outer diameter of 40 mm, in the inner bore of a quartz glass rod 20 is fixed with an outer diameter of 10 mm.
  • a stirring rod 22 made of molybdenum with a diameter of 20 mm is fixed, which extends perpendicular to the central axis 18 on both sides of the holding rod 21 to close to the inner wall of the crucible 1.
  • flat molybdenum plates 23 are fixed, which extend at a distance of 5 mm to the crucible wall over a length of about 8 cm from the lower edge of the stirring bar 22 vertically downwards.
  • the stir bar 22, the Molybdenum plate 23, and the lower portion of the holding rod 21 (about up to half of the protruding into the inner space 5 part) are coated with Al 2 O 3 .
  • the SiO 2 grain 3 is fed into the crucible 1 and thereby the stirring tool 11 is rotated continuously about the center axis 18 at a rotational speed of 1 rpm.
  • the SiO 2 grain particles 3 are uniformly distributed over the entire cross section of the crucible interior 5, so that a relatively flat granulation layer 24 is formed.
  • the formation of a pronounced bulk cone of the silica particles 3 is prevented.
  • an axial Temperaturgardient forms, wherein the silicon dioxide particles 3 are heated to a maximum temperature of about 2200 0 C.
  • a homogeneous, bubble-free glass mass 25 forms on the bottom of the crucible 1, on which the granulation layer 24 of SiO 2 particles 3 floats.
  • the agitating tool 11 rotating about the crucible central axis 18, the granulation layer 24 is impressed with a radial distribution profile with a horizontally extending free surface.
  • the stirring tool 11 is introduced into the crucible 1 just enough so that the stirring rod 22 projects into the SiO 2 grain layer 24, but not at all or at most 1 cm deep into the transition region 26.
  • the measurement and monitoring of the temperature of the SiO 2 grain layer 24 takes place by means of a pyrometer 13 whose measuring spot is exactly transferred to the SiO 2 -Kömungstik 24 by means of serving as a light guide quartz glass rod 20.
  • the softened silicon dioxide mass flows out via the bottom outlet opening 4 and is subsequently drawn down in the form of a cylindrical quartz glass strand 16 in the form of a rod or tube, as indicated by the directional arrow 17. From the cooled quartz glass strand 16 pieces are separated in the desired length.
  • FIGS. 2 and 3 construction-identical or equivalent components and components are referred to, as explained in more detail above with reference to the description of the first embodiment of the device according to the invention.
  • an inductive heating of the crucible 1 is provided, so that an induction coil 28 is provided instead of a heating element.
  • an induction coil 28 is provided instead of a heating element.
  • a bent molybdenum rod 29 rotatable about the central axis 18 is provided instead of the straight stirring rod (reference numeral 22 in FIG. 1). The bend is such that, as viewed from above, the rotation results in a convex-shaped envelope.
  • the molybdenum rod 29 and the lower portion of the support rod 21 are enveloped with Si02.
  • a solid screw 30 of molybdenum is provided, which is rotatable about the central axis 18 in the manner of a screw conveyor.
  • the agitator 30 acts essentially in the central region of the crucible 1, where it ensures a particularly strong compaction of the granulation layer 24. This receives a radial distribution profile with a central depression.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Selon un procédé connu de tirage en creuset vertical, servant à produire un corps en verre présentant une teneur élevée en acide silicique, on introduit des granulés de SiO2 (3) dans un creuset (1) pour former une couche de granulés de SiO2 (24) dans une zone supérieure du creuset (1). Sous l'effet du chauffage des granulés de SiO2 (3), une masse vitreuse (25) homogène ramollie se forme dans la zone inférieure du creuset, cette masse étant prélevée en continu par l'intermédiaire d'un orifice (4) ménagé dans le fond du creuset (1) et formant une barre de verre (16). L'objectif de l'invention est d'améliorer la fusion des granulés à teneur élevée en acide silicique pour produire ainsi des corps de verre homogènes à partir d'un verre à teneur élevée en acide silicique par tirage à partir de la matière fondue. A cet effet, les granulés de SiO2 (3) sont répartis dans le creuset (1) en étant mis en contact avec un dispositif de répartition (11) agissant mécaniquement sur ces derniers.
PCT/EP2005/008343 2004-08-02 2005-08-02 Procede de tirage en creuset vertical pour produire un corps en verre presentant une teneur elevee en acide silicique et dispositif pour la mise en oeuvre dudit procede WO2006015763A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004037692.1 2004-08-02
DE102004037692 2004-08-02

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WO2006015763A1 true WO2006015763A1 (fr) 2006-02-16

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Cited By (15)

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DE102008030115A1 (de) 2008-06-27 2009-12-31 Heraeus Quarzglas Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung eines Quarzglaszylinders
DE102009030852B3 (de) * 2009-06-26 2010-07-08 Heraeus Quarzglas Gmbh & Co. Kg Verfahren und Vorrichtung zum Ziehen eines Quarzglaszylinders aus einem Schmelztiegel
DE102013102989A1 (de) 2013-03-22 2014-09-25 Heraeus Quarzglas Gmbh & Co. Kg Verfahren und Vorrichtung zum Ziehen eines Stabes, eines Rohres oder einer Platte aus Quarzglas
WO2017103162A1 (fr) * 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Fabrication d'un corps en verre de silice dans un creuset fritté debout
US10618833B2 (en) 2015-12-18 2020-04-14 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a synthetic quartz glass grain
US10676388B2 (en) 2015-12-18 2020-06-09 Heraeus Quarzglas Gmbh & Co. Kg Glass fibers and pre-forms made of homogeneous quartz glass
US10730780B2 (en) 2015-12-18 2020-08-04 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a multi-chamber oven
US11053152B2 (en) 2015-12-18 2021-07-06 Heraeus Quarzglas Gmbh & Co. Kg Spray granulation of silicon dioxide in the preparation of quartz glass
US11236002B2 (en) 2015-12-18 2022-02-01 Heraeus Quarzglas Gmbh & Co. Kg Preparation of an opaque quartz glass body
US11299417B2 (en) 2015-12-18 2022-04-12 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a melting crucible of refractory metal
US11339076B2 (en) 2015-12-18 2022-05-24 Heraeus Quarzglas Gmbh & Co. Kg Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass
RU2780190C1 (ru) * 2021-11-16 2022-09-20 Общество с ограниченной ответственностью научно-производственное предприятие "Наноструктурная Технология Стекла" (ООО НПП "НТС") Устройство для изготовления стеклоизделий
US11492285B2 (en) 2015-12-18 2022-11-08 Heraeus Quarzglas Gmbh & Co. Kg Preparation of quartz glass bodies from silicon dioxide granulate
US11492282B2 (en) 2015-12-18 2022-11-08 Heraeus Quarzglas Gmbh & Co. Kg Preparation of quartz glass bodies with dew point monitoring in the melting oven
US11952303B2 (en) 2015-12-18 2024-04-09 Heraeus Quarzglas Gmbh & Co. Kg Increase in silicon content in the preparation of quartz glass

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DE10225850A1 (de) * 2002-06-01 2003-12-18 Schott Glas Schmelztiegel zum Erzeugen eines Glasstranges
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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008030115A1 (de) 2008-06-27 2009-12-31 Heraeus Quarzglas Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung eines Quarzglaszylinders
US8613207B2 (en) 2008-06-27 2013-12-24 Heraeus Quarzglas Gmbh & Co. Kg Method and apparatus for producing a quartz glass cylinder
DE102009030852B3 (de) * 2009-06-26 2010-07-08 Heraeus Quarzglas Gmbh & Co. Kg Verfahren und Vorrichtung zum Ziehen eines Quarzglaszylinders aus einem Schmelztiegel
WO2010149530A1 (fr) * 2009-06-26 2010-12-29 Heraeus Quarzglas Gmbh & Co. Kg Procédé et dispositif d'étirage d'un cylindre de verre quartzeux à partir d'un creuset de fusion
CN102471118A (zh) * 2009-06-26 2012-05-23 赫罗伊斯石英玻璃股份有限两合公司 用于从熔化坩埚中拉制石英玻璃柱体的方法和装置
DE102013102989A1 (de) 2013-03-22 2014-09-25 Heraeus Quarzglas Gmbh & Co. Kg Verfahren und Vorrichtung zum Ziehen eines Stabes, eines Rohres oder einer Platte aus Quarzglas
US10676388B2 (en) 2015-12-18 2020-06-09 Heraeus Quarzglas Gmbh & Co. Kg Glass fibers and pre-forms made of homogeneous quartz glass
US10618833B2 (en) 2015-12-18 2020-04-14 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a synthetic quartz glass grain
WO2017103162A1 (fr) * 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Fabrication d'un corps en verre de silice dans un creuset fritté debout
US10730780B2 (en) 2015-12-18 2020-08-04 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a multi-chamber oven
US11053152B2 (en) 2015-12-18 2021-07-06 Heraeus Quarzglas Gmbh & Co. Kg Spray granulation of silicon dioxide in the preparation of quartz glass
US11236002B2 (en) 2015-12-18 2022-02-01 Heraeus Quarzglas Gmbh & Co. Kg Preparation of an opaque quartz glass body
US11299417B2 (en) 2015-12-18 2022-04-12 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a melting crucible of refractory metal
US11339076B2 (en) 2015-12-18 2022-05-24 Heraeus Quarzglas Gmbh & Co. Kg Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass
US11492285B2 (en) 2015-12-18 2022-11-08 Heraeus Quarzglas Gmbh & Co. Kg Preparation of quartz glass bodies from silicon dioxide granulate
US11492282B2 (en) 2015-12-18 2022-11-08 Heraeus Quarzglas Gmbh & Co. Kg Preparation of quartz glass bodies with dew point monitoring in the melting oven
US11708290B2 (en) 2015-12-18 2023-07-25 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a multi-chamber oven
US11952303B2 (en) 2015-12-18 2024-04-09 Heraeus Quarzglas Gmbh & Co. Kg Increase in silicon content in the preparation of quartz glass
RU2780190C1 (ru) * 2021-11-16 2022-09-20 Общество с ограниченной ответственностью научно-производственное предприятие "Наноструктурная Технология Стекла" (ООО НПП "НТС") Устройство для изготовления стеклоизделий

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