WO2006012818A3 - Lumineszenzdiode mit einer reflexionsmindernden schichtenfolge - Google Patents

Lumineszenzdiode mit einer reflexionsmindernden schichtenfolge Download PDF

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Publication number
WO2006012818A3
WO2006012818A3 PCT/DE2005/001065 DE2005001065W WO2006012818A3 WO 2006012818 A3 WO2006012818 A3 WO 2006012818A3 DE 2005001065 W DE2005001065 W DE 2005001065W WO 2006012818 A3 WO2006012818 A3 WO 2006012818A3
Authority
WO
WIPO (PCT)
Prior art keywords
reflection
layer sequence
reducing layer
luminescent diode
diode provided
Prior art date
Application number
PCT/DE2005/001065
Other languages
English (en)
French (fr)
Other versions
WO2006012818A2 (de
Inventor
Ines Pietzonka
Wolfgang Schmid
Ralph Wirth
Original Assignee
Osram Opto Semiconductors Gmbh
Ines Pietzonka
Wolfgang Schmid
Ralph Wirth
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Ines Pietzonka, Wolfgang Schmid, Ralph Wirth filed Critical Osram Opto Semiconductors Gmbh
Priority to EP05760046A priority Critical patent/EP1771890A2/de
Priority to KR1020077004555A priority patent/KR101145541B1/ko
Priority to JP2007522905A priority patent/JP2008508697A/ja
Priority to US11/659,066 priority patent/US20080224156A1/en
Publication of WO2006012818A2 publication Critical patent/WO2006012818A2/de
Publication of WO2006012818A3 publication Critical patent/WO2006012818A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Bei einer Lumineszenzdiode (1) mit einer aktiven Zone (7), die elektromagnetische Strahlung in eine Hauptstrahlrichtung (15) emittiert, wobei der aktiven Zone (7) in der Hauptstrahlrichtung (15) eine reflexionsmindernde Schichtenfolge (16) nachgeordnet ist, enthält die reflexionsmindernde Schichtenfolge einen aus mindestens einem Schichtpaar (11, 12) gebildeten DBR-Spiegel (13), eine dem DBR-Spiegel (13) in der Hauptstrahlrichtung (15) nachfolgende Vergütungsschicht (9) und eine zwischen dem DBR-Spiegel (13) und der Vergütungsschicht (9) angeordnete Zwischenschicht (14).
PCT/DE2005/001065 2004-07-30 2005-06-15 Lumineszenzdiode mit einer reflexionsmindernden schichtenfolge WO2006012818A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP05760046A EP1771890A2 (de) 2004-07-30 2005-06-15 Lumineszenzdiode mit einer reflexionsmindernden schichtenfolge
KR1020077004555A KR101145541B1 (ko) 2004-07-30 2005-06-15 반사감소층 시퀀스가 구비된 발광 다이오드
JP2007522905A JP2008508697A (ja) 2004-07-30 2005-06-15 反射低減層列を備えたルミネセンスダイオード
US11/659,066 US20080224156A1 (en) 2004-07-30 2005-06-15 Luminescent Diode Provided with a Reflection- Reducing Layer Sequence

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102004037100 2004-07-30
DE102004037100.8 2004-07-30
DE102004040968.4 2004-08-24
DE102004040968A DE102004040968A1 (de) 2004-07-30 2004-08-24 Lumineszenzdiode mit einer reflexionsmindernden Schichtenfolge

Publications (2)

Publication Number Publication Date
WO2006012818A2 WO2006012818A2 (de) 2006-02-09
WO2006012818A3 true WO2006012818A3 (de) 2006-04-06

Family

ID=35563164

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/001065 WO2006012818A2 (de) 2004-07-30 2005-06-15 Lumineszenzdiode mit einer reflexionsmindernden schichtenfolge

Country Status (7)

Country Link
US (1) US20080224156A1 (de)
EP (1) EP1771890A2 (de)
JP (1) JP2008508697A (de)
KR (1) KR101145541B1 (de)
DE (1) DE102004040968A1 (de)
TW (1) TWI305692B (de)
WO (1) WO2006012818A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010278355A (ja) * 2009-05-29 2010-12-09 Fujifilm Corp 発光デバイス
TW201307460A (zh) * 2011-08-01 2013-02-16 W Green Technology Corp Sa 具特定區段波長匹配折射率之材料組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997048138A2 (en) * 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
US6097041A (en) * 1998-08-24 2000-08-01 Kingmax Technology Inc. Light-emitting diode with anti-reflector
US20010011730A1 (en) * 2000-02-08 2001-08-09 Kabushiki Kaisha Toshiba Semiconductor light emimiting device
US20040104398A1 (en) * 2002-11-25 2004-06-03 Schang-Jing Hon Gallium nitride based light-emitting device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404282A (en) * 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
US5397920A (en) * 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
JP2002026385A (ja) 2000-07-06 2002-01-25 Hitachi Cable Ltd 発光ダイオード
US6542531B2 (en) * 2001-03-15 2003-04-01 Ecole Polytechnique Federale De Lausanne Vertical cavity surface emitting laser and a method of fabrication thereof
US6546029B2 (en) * 2001-03-15 2003-04-08 Ecole Polytechnique Federale De Lausanne Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof
JP4048056B2 (ja) 2002-01-15 2008-02-13 シャープ株式会社 半導体発光素子及びその製造方法
JP2004031513A (ja) * 2002-06-24 2004-01-29 Sharp Corp 半導体発光素子
JP2005340567A (ja) * 2004-05-28 2005-12-08 Fuji Xerox Co Ltd 表面発光型半導体レーザ素子およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997048138A2 (en) * 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
US6097041A (en) * 1998-08-24 2000-08-01 Kingmax Technology Inc. Light-emitting diode with anti-reflector
US20010011730A1 (en) * 2000-02-08 2001-08-09 Kabushiki Kaisha Toshiba Semiconductor light emimiting device
US20040104398A1 (en) * 2002-11-25 2004-06-03 Schang-Jing Hon Gallium nitride based light-emitting device

Also Published As

Publication number Publication date
TWI305692B (en) 2009-01-21
EP1771890A2 (de) 2007-04-11
JP2008508697A (ja) 2008-03-21
TW200614612A (en) 2006-05-01
DE102004040968A1 (de) 2006-03-23
US20080224156A1 (en) 2008-09-18
KR20070046146A (ko) 2007-05-02
WO2006012818A2 (de) 2006-02-09
KR101145541B1 (ko) 2012-05-15

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