WO2006008922A1 - 弾性表面波フィルタ - Google Patents
弾性表面波フィルタ Download PDFInfo
- Publication number
- WO2006008922A1 WO2006008922A1 PCT/JP2005/011826 JP2005011826W WO2006008922A1 WO 2006008922 A1 WO2006008922 A1 WO 2006008922A1 JP 2005011826 W JP2005011826 W JP 2005011826W WO 2006008922 A1 WO2006008922 A1 WO 2006008922A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- idt electrode
- input
- wave filter
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/14552—Transducers of particular shape or position comprising split fingers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Definitions
- the present invention relates to a transversal surface acoustic wave filter, and more particularly to a transversal surface acoustic wave filter in which a shield electrode is disposed between an input-side IDT electrode and an output-side IDT electrode.
- a transversal surface acoustic wave filter has been widely used as a bandpass filter for video intermediate frequency (VIF) of a television receiver.
- VIF video intermediate frequency
- a shield electrode connected to the ground potential is often disposed between the input-side IDT electrode and the output-side IDT electrode. This is in order to suppress electromagnetic and electrostatic coupling between the input-side IDT electrode and the output-side IDT electrode by arranging the shield electrode.
- Patent Document 1 discloses a surface acoustic wave filter having a structure for suppressing the above-described unnecessary waves.
- FIG. 5 is a schematic plan view for explaining the surface acoustic wave filter described in Patent Document 1.
- FIG. 5 is a schematic plan view for explaining the surface acoustic wave filter described in Patent Document 1.
- a shield electrode 104 is disposed between the input-side IDT electrode 102 and the output-side IDT electrode 103. Between the shield electrode 104 and the input-side IDT electrode 102, two floating electrode fingers 105a and 105b having a line width of ⁇ 8 and a force S ⁇ 8 are arranged with a gap therebetween. Note that ⁇ is used in the surface acoustic wave filter 101. Indicates the wavelength of the surface wave.
- the excitation point of the unwanted wave described above exists at the midpoint between the end of the shield electrode 104 on the input IDT electrode side and the end of the input IDT electrode 102 on the shield electrode 104 side. Therefore, by disposing the floating electrode fingers 105a and 105b so as to sandwich the midpoint, the excitation field of unnecessary waves is canceled out.
- Patent Document 1 Japanese Patent Publication No. 2-44168
- An object of the present invention is a transversal type in which a re-excitation wave that hardly suppresses an unnecessary wave generated between a shield electrode and an IDT electrode can hardly be generated even when downsizing is advanced. It is an object of the present invention to provide a surface acoustic wave filter.
- the present invention relates to a surface wave substrate, an input side interdigital electrode formed on the surface wave substrate, and an output side disposed on the surface wave substrate and separated from the input side interdigital electrode.
- a transversal surface acoustic wave filter comprising an interdigital electrode and a shield electrode connected between the input interdigital electrode and the output interdigital electrode and connected to a ground potential
- An excitation point closest to the shield electrode of the input-side interdigital electrode, an end of the input-side interdigital electrode on the shield electrode side, and an end of the shield electrode on the input-side interdigital electrode side It is characterized in that the distance from the midpoint is in the range of 0.8 mm to 0.975 ⁇ when the wavelength of the surface wave is taken.
- one of the input-side IDT electrode and the output-side IDT electrode is an unbalanced IDT electrode, and the input-side IDT electrode and the output-side IDT The other electrode is a balanced IDT electrode.
- one of the input-side IDT electrode and the output-side IDT electrode is weighted.
- the input-side IDT electrode and the output-side IDT electrode are regular IDT electrodes.
- a shield electrode connected to the ground potential is disposed between the input-side IDT electrode and the output-side IDT electrode, and the excitation point of the input-side IDT electrode is Of these, the excitation point closest to the shield electrode and the unwanted wave excitation point that is the midpoint between the input electrode IDT electrode shield electrode end and the shield electrode input IDT electrode end. Since the distance X is in the range of 0.8 to 0.975, ripples in the passband can be effectively suppressed. In other words, even if the distance between the IDT electrode on the input side and the shield electrode is shortened, ripples due to unnecessary waves can be effectively suppressed, and no split floating electrode is provided. Reexcitation waves are also unlikely to occur. Therefore, even when the size is reduced, it is possible to obtain good filter characteristics with less ripple as compared with the conventional surface acoustic wave filter as described in Patent Document 1.
- a split type floating electrode is not used, undesired re-excitation waves are hardly generated. Yes. Therefore, according to the present invention, there is provided a surface acoustic wave filter that is small and has good filter characteristics, in which undesired ripples are unlikely to occur even when the distance between the IDT electrode and the shield electrode is reduced to reduce the size. It becomes possible to do.
- a balanced-unbalanced conversion function is provided.
- a surface acoustic wave filter having good filter characteristics can be provided.
- the input-side IDT electrode and the output-side IDT electrode may be composed of regular IDT electrodes.
- the filter has good filter characteristics according to the present invention.
- a surface acoustic wave filter can be provided inexpensively and easily.
- FIG. 1 is a plan view of a surface acoustic wave filter according to an embodiment of the present invention.
- FIG. 2 is a diagram showing changes in the magnitude of ripples when the distance ⁇ is variously changed in the surface acoustic wave filter shown in FIG.
- FIG. 3 is a diagram showing changes in the magnitude of ripple when the distance ⁇ is variously changed in the vicinity of 0.875 in the surface acoustic wave filter shown in FIG.
- FIG. 4 is a diagram showing the frequency characteristics of a surface acoustic wave filter according to an embodiment of the present invention and a conventional surface acoustic wave filter prepared for comparison.
- FIG. 5 is a plan view showing an example of a conventional surface acoustic wave filter.
- FIG. 1 is a plan view of a surface acoustic wave filter according to an embodiment of the present invention.
- the surface acoustic wave filter 1 has a surface wave substrate 2.
- Surface wave substrate 2 is LiTaO, LiNb
- Piezoelectric single crystals such as O or quartz, or piezoelectric ceramics such as PZT ceramics
- the surface wave substrate 2 may have a structure in which a piezoelectric thin film is formed on an insulating substrate such as glass.
- the input-side IDT electrode 3 and the output-side IDT electrode 4 are disposed so as to be separated in the surface wave propagation direction.
- the input-side IDT electrode 3 is an IDT electrode that is subjected to cross width weighting.
- the input-side IDT electrode 3 is an unbalanced IDT electrode.
- the input-side IDT electrode 3 includes a comb-shaped electrode 3A having a plurality of electrode fingers and a comb-shaped electrode 3B having a plurality of electrode fingers.
- the plurality of electrode fingers of the comb-shaped electrodes 3A, 3B are each composed of a force split type electrode.
- a split electrode is an electrode composed of a pair of electrode fingers connected to the same potential.
- the electrode finger of the IDT electrode is not limited to the split electrode.
- the output-side IDT electrode 4 is an IDT electrode that can extract a balanced output.
- the output IDT electrode 4 has a pair of comb electrodes 4A and 4B.
- the electrode fingers of the comb-shaped electrode 4A are also composed of split electrodes as in the case of the input-side IDT electrode. Even on the output side IDT electrode 4, the electrode fingers are not limited to those using split electrodes!
- the shield electrode 5 is connected to the input side IDT electrode 3 and the output side IDT electrode. Between 4 and 4. The shield electrode 5 is connected to the ground potential.
- the input-side IDT electrode 3, the output-side IDT electrode 4, and the shield electrode 5 can be formed of an appropriate conductive material such as A1 or an A1 alloy.
- the surface acoustic wave filter 1 of the present embodiment is characterized by the excitation point A closest to the shield electrode 5 among the excitation points of the input IDT electrode 3, and the shield electrode side end of the input IDT electrode 3
- the distance X between the end of the shield electrode 5 near the input side IDT electrode 3 and the midpoint B is in the range of X force 0.8 to 0.975.
- ⁇ is the wavelength of the surface wave used in the surface acoustic wave filter 1.
- the excitation point in the input-side IDT electrode is located at the center point between electrode fingers connected to different potentials adjacent to each other.
- a force with a plurality of excitation points is present in the IDT electrode 3 on the input side.
- the excitation point ⁇ ⁇ is the excitation point closest to the shield electrode among the plurality of excitation points.
- the surface acoustic wave filter 101 of the present embodiment since no floating electrode fingers are provided, the re-excitation wave as described above does not occur, and therefore a ripple based on the re-excitation wave hardly occurs.
- the ripple caused by the unnecessary wave generated when the human power JIDT electrode 3 and the shield electrode 5 are brought close to each other can be effectively suppressed only by setting the distance X in the range of 0.8 to 0.975 ⁇ .
- a specific experimental example will be described to explain that ripples in the passband can be effectively suppressed when the distance X is in the range of 0.8 to 0.975.
- An input side IDT electrode 3, an output side IDT electrode 4, and a shield electrode 5 were formed on a surface wave substrate 2 made of glass, using A1 as an electrode material. 25 ⁇ piezoelectric thin film on top It was formed with a thickness of m. The wavelength was 59.48 ⁇ m, and the distance between the input IDT electrode 3 and the output IDT electrode 4 was 400 ⁇ m. The number of electrode fingers of the input side IDT electrode 3 is 151 pairs, and the number of output side IDT electrodes 4 is 9 pairs. In this way, a surface acoustic wave filter that can be used as a VIF bandpass filter for digital television with a center frequency of 4 MHz was fabricated.
- the ripple is larger when the distance X is 0.625 compared to the ripple when the distance X is 1.91 ⁇ . That is, it can be seen that when the distance X is shortened and the size is reduced, the ripple in the passband tends to increase. However, it can be seen that as the distance X decreases, the magnitude of the ripple does not necessarily increase.
- X is between 0.85 and 0.9 ⁇
- the magnitude of the ripple can be reduced to 0.4dB or less, and the size of X is 1.5 ⁇ or more.
- the same characteristics as a large surface acoustic wave filter can be obtained.
- the frequency characteristics of a conventional surface acoustic wave filter are shown by a broken line in Fig. 4 for comparison.
- ripples appear obscene.
- a surface wave filter may be configured.
- the input-side IDT electrode 3 is subjected to cross width weighting, and the output-side IDT electrode 4 is composed of a regular IDT electrode.
- Output-side IDT electrode 4 may be subjected to cross width weighting, and the IDT electrode 3 on the input side may be composed of a regular IDT electrode.
- the weighting of the IDT electrodes is not limited to the above-described intersection width weighting, and other weighting methods such as a thinning method may be used! /.
- both the input-side IDT electrode and the output-side IDT electrode may be constituted by regular IDT electrodes.
- the phase of the surface wave depends on the position of the excitation point, even if the IDT electrode is weighted or not weighted, the distance X is set to the specific range. According to the present invention, unnecessary waves can be effectively suppressed.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006528704A JPWO2006008922A1 (ja) | 2004-07-15 | 2005-06-28 | 弾性表面波フィルタ |
| US11/619,243 US7271685B2 (en) | 2004-07-15 | 2007-01-03 | Surface acoustic wave filter |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-208293 | 2004-07-15 | ||
| JP2004208293 | 2004-07-15 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/619,243 Continuation US7271685B2 (en) | 2004-07-15 | 2007-01-03 | Surface acoustic wave filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2006008922A1 true WO2006008922A1 (ja) | 2006-01-26 |
Family
ID=35785045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2005/011826 Ceased WO2006008922A1 (ja) | 2004-07-15 | 2005-06-28 | 弾性表面波フィルタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7271685B2 (ja) |
| JP (1) | JPWO2006008922A1 (ja) |
| KR (1) | KR100773700B1 (ja) |
| WO (1) | WO2006008922A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3079101B1 (fr) * | 2018-03-16 | 2020-11-06 | Frecnsys | Structure de transducteur pour suppression de source dans les dispositifs de filtres a ondes acoustiques de surface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646333U (ja) * | 1979-09-17 | 1981-04-25 | ||
| JPH07162260A (ja) * | 1993-12-13 | 1995-06-23 | Toshiba Corp | 弾性表面波フィルタ |
| JPH08316773A (ja) * | 1995-05-22 | 1996-11-29 | Fujitsu Ltd | 表面弾性波装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5580911A (en) | 1978-12-15 | 1980-06-18 | Nippon Hoso Kyokai <Nhk> | Elastic surface wave device |
| US4206380A (en) * | 1978-12-22 | 1980-06-03 | Hitachi, Ltd. | Piezoelectric surface acoustic wave device with suppression of reflected signals |
| JPH0244168B2 (ja) | 1982-08-23 | 1990-10-03 | Nippon Electric Co | Danseihyomenhasochi |
| JP2535822B2 (ja) * | 1986-02-27 | 1996-09-18 | 日本電気株式会社 | 弾性表面波フイルタ |
| JPH07122962A (ja) | 1993-10-22 | 1995-05-12 | Murata Mfg Co Ltd | 表面波フィルタ |
| JP2001044791A (ja) | 1999-08-02 | 2001-02-16 | Mitsubishi Materials Corp | 表面弾性波フィルタ |
-
2005
- 2005-06-28 JP JP2006528704A patent/JPWO2006008922A1/ja active Pending
- 2005-06-28 WO PCT/JP2005/011826 patent/WO2006008922A1/ja not_active Ceased
- 2005-06-28 KR KR1020067023489A patent/KR100773700B1/ko not_active Expired - Lifetime
-
2007
- 2007-01-03 US US11/619,243 patent/US7271685B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646333U (ja) * | 1979-09-17 | 1981-04-25 | ||
| JPH07162260A (ja) * | 1993-12-13 | 1995-06-23 | Toshiba Corp | 弾性表面波フィルタ |
| JPH08316773A (ja) * | 1995-05-22 | 1996-11-29 | Fujitsu Ltd | 表面弾性波装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070103259A1 (en) | 2007-05-10 |
| KR100773700B1 (ko) | 2007-11-05 |
| US7271685B2 (en) | 2007-09-18 |
| KR20070015197A (ko) | 2007-02-01 |
| JPWO2006008922A1 (ja) | 2008-05-01 |
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