WO2006004199A1 - Filtre à ondes de surface de résonateur - Google Patents

Filtre à ondes de surface de résonateur Download PDF

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Publication number
WO2006004199A1
WO2006004199A1 PCT/JP2005/012634 JP2005012634W WO2006004199A1 WO 2006004199 A1 WO2006004199 A1 WO 2006004199A1 JP 2005012634 W JP2005012634 W JP 2005012634W WO 2006004199 A1 WO2006004199 A1 WO 2006004199A1
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WO
WIPO (PCT)
Prior art keywords
electrode
interdigital
section
surface acoustic
acoustic wave
Prior art date
Application number
PCT/JP2005/012634
Other languages
English (en)
Japanese (ja)
Inventor
Michiaki Takagi
Katsuro Yoneya
Masahiro Oshio
Original Assignee
Seiko Epson Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corporation filed Critical Seiko Epson Corporation
Priority to JP2006528988A priority Critical patent/JP4432968B2/ja
Priority to US11/571,432 priority patent/US7579932B2/en
Priority to CN2005800230445A priority patent/CN1981434B/zh
Publication of WO2006004199A1 publication Critical patent/WO2006004199A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0023—Balance-unbalance or balance-balance networks
    • H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
    • H03H9/0033—Balance-unbalance or balance-balance networks using surface acoustic wave devices having one acoustic track only
    • H03H9/0042—Balance-unbalance or balance-balance networks using surface acoustic wave devices having one acoustic track only the balanced terminals being on opposite sides of the track
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14544—Transducers of particular shape or position
    • H03H9/14588—Horizontally-split transducers

Definitions

  • an input side and an output side interdigital electrode and a pair of reflectors on both sides are formed on a piezoelectric flat plate, and a Rayleigh wave or STW (Surface Ti; (Surface Skimming Bulk Acoustic Wave), 'relates to a resonator type SAW filter such as a longitudinal multimode type, which is realized by using an inertial surface wave such as an SH wave, a love wave, or a sesa wave.
  • a quartz quartz substrate which is a piezoelectric material, has been used as the substrate for resonator-type SAW filters.
  • the substrate has a surface acoustic wave (S TW or SSBW) velocity as fast as 51 m / sec and is a GH z-band SAW device. I came.
  • the above-mentioned quartz S TW cut substrate is already well known.
  • a SAW device using this substrate uses STW or SSBW type surface acoustic waves that propagate in the direction of the optical axis after rotation of the plate (see Non-Patent Document 1).
  • a resonator type SAW filter such as a vertical double mode type or vertical triple mode type can be configured to realize a SAW device in the 1 GHz to 3 GHz band. It can.
  • Examples of the prior art of the resonator type SAW filter include Patent Document 1, Patent Document '2, and Patent Document 3.
  • Non-patent document 2 can be cited as an example of a resonator type SAW filter realized by the conventional technology.
  • Patent Document 1 Japanese Patent Laid-Open No. Sho 62-1-8 8 5 1 2
  • Patent Document 2 WO 0 0 Z 1 3 3 1 6
  • Patent Document 3 US Patent No. 5 2 2 0 2 3 4 Specification
  • Non-Patent Document 1 T. N I SHI K AWA et al: “SH-T YPE SUR FACE ACOUSTIC CAVE SON R OTA TED Y-CUT QUART Z P roc. 3 4 th a n.
  • Non-Patent Document 2 Hiromi Y atsuda: "S AW D evice A ssenbly T echnology", Internationa 1 Symposi um on A coustic Wave D evice for Future Mobile Communication S ystems, C hiba Universitypp. 1 8 9— 1 9 4 (5 th M arch 2 0 0 1)
  • the pass ratio bandwidth is the value obtained by dividing the 3 dB bandwidth by the filter center frequency.
  • the technical and theoretical means used in the present invention are based on the introduction of a new control interdigital electrode having a periodic structure and the “frequency potential design method” designed by the inventor. It solves the point.
  • the above-mentioned “frequency potential design method” can be simply described as follows.
  • X is the position coordinate in the phase traveling direction of the surface acoustic wave.
  • the invention of the present application is caused by the above invention, and causes noise It provides a solution to improve the sideband component (second problem>).
  • An object of the present invention is to realize a longitudinal multiple mode resonator type SAW filter having a low insertion loss and a wide specific bandwidth.
  • the width of the electrode fingers of the electrode (with a dimension of ⁇ 4) is used, and the longitudinal multimode type is stable with a low insertion loss and a wide bandwidth of 200 to 400 ppm. It is to realize a resonator type SAW filter. Disclosure of the invention.
  • the resonator type SAW filter includes an input interdigital electrode for exciting a surface acoustic wave and an output interdigital transducer for receiving the surface acoustic wave excited by the input interdigital electrode on a piezoelectric plate.
  • a control interdigital electrode for controlling the state of the surface acoustic wave between the input interdigital electrode and the output interdigital electrode, and on both sides of the input interdigital electrode and the output interdigital electrode.
  • a pair of reflectors, and a resonator type SAW filter arranged in the direction in which the surface acoustic wave propagates, the input side interdigital electrode and the output side interdigital electrode.
  • the control blinds and electrical poles are composed of electrode fingers arranged in two different sections C and E, which are arranged one after the other.
  • the width L of the electrode fingers is The wavelength of the surface acoustic wave is approximately ⁇ 4
  • the pair of fingers MC is one pair
  • the electrode period length ⁇ in the section ⁇ is ⁇ ⁇
  • the pair of electrode fingers ⁇ 1 is one pair
  • the ratio of the electrode period length of the section C and the section PE PEZPC Is within the range of 0.8 ′ ⁇ ⁇ 'PC ⁇ 1, and the electrode fingers provided in the section C and the section ⁇ ⁇ ⁇ are both connected to the feeding conductor.
  • the effective reflection coefficient of one electrode finger is reduced and wideband is achieved.
  • a resonator type SAW filter such as a vertical double mode type or vertical triple mode type can be easily realized.
  • the electrode fingers in section C and section E are electrically connected and the elastic wave is excited and is not interrupted, the sideband component can be made sufficiently small.
  • the electromechanical coupling coefficient of the crystal S TW force that allows the surface acoustic wave velocity to be as high as 5 100 / sec and therefore high-frequency operation can be obtained.
  • the vertical triple resonator type S AW with a pass ratio bandwidth of 3 0 0 0 to 4 0 0 Q ppm A filter can be realized.
  • an LZ 4 electrode having a film thickness of about 100 nm is formed at 1.5 GHz, and a resonator type SAW filter having the above-mentioned pass ratio bandwidth characteristic can be realized.
  • the surface acoustic wave reflection coefficient ⁇ indicated by one of the electrode fingers formed by the piezoelectric plate and the interdigital electrode is in the range of 0.03 to 0.110. desirable. ' ⁇ According to this configuration, the surface acoustic wave velocity is as fast as 5 100 m / sec. Therefore, the crystal S TW cut substrate capable of high frequency operation, or the velocity is .. 1 0.0 OQm / se: A substrate using diamond of .c, which is faster, can use a substrate with a large reflection coefficient ⁇ .
  • a sufficiently thick film thickness (about l OO nm) without being bothered by an increase in the reflection coefficient ⁇ due to an increase in the film thickness.
  • the / 4 electrode can be formed to form a reliable resonator type SAW filter.
  • the resonance mode to be used is a longitudinal triple mode synthesized from the resonance phenomenon of the fundamental wave symmetric mode S 0, the fundamental wave oblique symmetric mode A 0, and the first order symmetric mode S 1, and the electrode
  • the equivalent reflection coefficient ⁇ ce of the surface acoustic wave represented by one of the electrode fingers of the interdigital electrode formed by alternately arranging the periodic lengths PC and PE is from 0.0 1 to 0.0 2 5 Be in range desirable.
  • a longitudinal triple mode type is used for a bandwidth of 200,000 ppm of a longitudinal double mode type composed of a fundamental wave symmetric mode S 0 and a fundamental wave oblique symmetric mode A 0.
  • a resonator-type SAW filter with a wide bandwidth of about 4 OOO ppm can be realized, so that the frequency of the insulator can be easily adjusted and the cost can be reduced.
  • the flat plate is a quartz STW cut substrate
  • the interdigital electrode is formed of aluminum metal
  • the reflection coefficient ⁇ of the surface acoustic wave indicated by one electrode finger is 0. 0 5 ⁇ 0. 0 2 and the ratio of the electrode period lengths P EZP C is 0.9 ⁇ 0. 0 2
  • the logarithm ⁇ of the electrode fingers of the interdigital electrodes for control is' 10 to 30 pairs
  • the sum of the electrode fingers of the input interdigital electrode and the output interdigital electrode is 80 ⁇ 10
  • the electrode finger crossing width of the electrode fingers WC is preferably 50 to 80 ⁇
  • the number of conductors of the reflector is preferably 30 to 100.
  • the resonator type SAW filter of the present invention includes an input side interdigital electrode for exciting a surface acoustic wave and an output side interdigital transducer for receiving the surface acoustic wave excited by the input side interdigital electrode on a piezoelectric plate.
  • the interdigital electrode and the control interdigital electrode are crossed!
  • the electrode fingers are provided in two different sections G and H, respectively, and the width L of the electrode fingers is equal to the surface acoustic wave.
  • the electrode period 'length P which is a sum of the electrode finger width L and the electrode finger dimension S, is P 2 L + S
  • the electrode period length P in the section G is PG and the number of electrode fingers NG is one
  • the electrode period length P in the section H is PH and the number of electrode fingers NH is one
  • the ratio PH / PG of the electrode period lengths of the section G and the section H is in the range of 0.8 to PH / PG 1 and the electrode fingers of the sections G and H are used as feeding conductors having different polarities. It is characterized by being connected. '
  • the effective reflection coefficient of one electrode finger is reduced to widen the bandwidth.
  • Resonator type SAW filters such as vertical double mode type and vertical triple mode type can be easily realized.
  • the electrode fingers in section G. and section H are electrically connected, and the sideband component can be completely removed because the elastic wave is excited and is not interrupted.
  • the surface acoustic wave velocity is as high as 5 100 m / sec. Therefore, the electromechanical coupling coefficient K 2 of the crystal S TW force capable of high-frequency operation is high.
  • the pass ratio bandwidth ranges from 3 0 00 to 4 0 O p pm. Filter can be realized. For example, by forming a / 4 electrode having a film thickness of about 10 nm at 1.5 GHz, it is possible to realize a resonator type SAW filter having the characteristics of the pass ratio bandwidth.
  • the reflection coefficient y of the surface acoustic wave indicated by the one electrode finger formed by the piezoelectric flat plate and the interdigital electrode is in the range of 0.03 to 0.10. .
  • the surface acoustic wave velocity is as fast as 5 100 m / sec, and therefore a quartz S TW cut substrate capable of high-frequency operation, or the velocity is 10 00 00 m / sec.
  • a high-speed substrate with a large reflection coefficient ⁇ such as a substrate using sec diamond, can be used.
  • Resonator type SAW filter having the frequency of 1 to 3 GHz using the above-mentioned substrate.
  • the resonance mode to be used is the longitudinal triple mode synthesized from the resonance phenomenon of the fundamental wave symmetry mode S 0, the fundamental wave oblique symmetry mode A 0 and the first order symmetry mode S 1, and
  • the equivalent reflection coefficient ygh indicated by the one electrode finger of the entire interdigital electrode formed by alternately arranging the electrode cycle lengths PG and PH is in the range of 0.01 to 0.025. Is desirable. '
  • the vertical dual mode type bandwidth composed of the fundamental wave symmetric mode S 0 and the fundamental wave oblique symmetric mode A 0 is compared to the vertical triple mode.
  • the mode type it is possible to realize a resonator type SAW filter with a wider bandwidth of about 400 ⁇ ⁇ , so that the frequency adjustment of the element is easy and the cost can be reduced.
  • the piezoelectric plate is a quartz crystal STW cut substrate
  • the interdigital electrode is formed of aluminum metal
  • the reflection coefficient ⁇ of the surface acoustic wave indicated by one electrode finger is 0.0.
  • the electrode period length ratio I 3 H / P G. is ..0 .-. 9 ⁇ 0.0.2
  • the control interdigital electrode is The number of pairs of electrode fingers MKL is in the range of ⁇ 0. to 30 pairs. _ And the input.
  • the sum of the pairs of the side interdigital electrodes and the output interdigital electrodes ⁇ is 4 0 ⁇ 10 pairs.
  • the electrode finger crossing width WC of the electrode fingers is preferably 50 to 80 ⁇ , and the number of conductors of the reflector is preferably 30 to 100.
  • the center frequency f (Ref) of the reflector is matched with the frequency f (IDT) generated by the interdigital electrode with the electrode period length PE or PH. It is desirable that
  • the frequency temperature coefficient is zero temperature coefficient with the substrate, and the secondary temperature coefficient j3 gar 6. Since a 4 X 1 0- 8 Z ° C 2, temperature range one From 45 to 85 ° C, the frequency fluctuation of the element itself is as small as 270 ppm and is stable, so there is an effect that the influence on the jitter (time and time accuracy variation) of the received signal is small.
  • Period C and E or G and H are periodically configured to reduce the reflection coefficient of the IDT, so that a filter with a pass ratio bandwidth of approximately 300 ppm can be realized.
  • the pass bandwidth of 3 MHz it is necessary and sufficient to cover the frequency component range 2 MHz of the signal used in the GPS device.
  • a 50 ⁇ filter with a small amplitude ripple within the passband width can be created.
  • Level of receiving apparatus can be low reduced to approximately 1/1 0 '. Since the frequency fluctuation is small with respect to the temperature change, a digital signal with low phase fluctuation and low jitter and low phase noise can be received, and there is no variation in geodetic accuracy, and the GPS can measure the position with high accuracy. Equipment can be provided to the market.
  • FIG. 1 is a schematic plan view showing an electrode pattern of a resonator type SAW filter according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram defining the elements of the interdigital electrode according to the present invention.
  • FIG. 3 is a diagram showing the electrode circumference and the length of an embodiment of the resonator type S A W filter of the present invention. :-.
  • FIG. 4 is a schematic diagram for explaining a periodic structure of a resonator type SAW filter according to the present invention.
  • FIG. 5 is a characteristic diagram showing reflection characteristics of a periodic structure of a resonator type SAW filter according to the present invention. .
  • FIG. 6 is a schematic diagram illustrating the operating principle of a resonator type S A W filter according to the present invention.
  • FIG. 7 is a reflection coefficient ⁇ characteristic diagram showing an S TW substrate used in the resonator type SAW filter according to the present invention.
  • FIG. 8A is a diagram showing a state of vibration displacement of the resonator type SAW filter according to the present invention.
  • FIG. 9 is a transmission characteristic diagram of a resonator type SAW filter according to a conventional technique.
  • FIG. 11 is a transmission characteristic diagram showing one embodiment of the resonator type SAW filter of the present invention. '
  • FIG. 12 is another transmission characteristic diagram showing one embodiment of the 2-wire cascaded resonator type SAW filter of the present invention.
  • FIG. 1 3 Transmission characteristics diagram showing the sideband component when two resonator S A W filters are cascaded.
  • FIG. 14 is a transmission characteristic diagram showing a sideband component when the resonator type SAW filters according to the present invention are cascaded in two stages.
  • FIG. 15 is a schematic plan view showing an electrode pattern of a resonator type SAW filter in Example 2 of the present invention.
  • FIG. 16 is a transmission characteristic diagram showing sideband components when the resonator-type SAW filters according to the present invention are cascaded in two stages.
  • FIG. Fig. 3 Fig. 4, Fig. 5, Fig. 6, Fig. 8 explain the basic operation principle
  • Fig. 9, Fig. 10 and Fig. 13 show the characteristics of conventional products
  • Fig. 7, Fig. 1 The characteristics of the resonator-type SAW filter of the present invention “f” will be described in detail with reference to FIGS. 1, 12, and 14. ,
  • FIG. 1 is a schematic plan view illustrating an electrode pattern formed on a piezoelectric plate for explaining one embodiment of a resonator type SAW filter (hereinafter sometimes referred to as an element for short) according to the present invention. It is.
  • IDT Interdigital Transducer
  • 10 6 A and 10 6 B are conductor strips constituting the reflector
  • 10 07 are electrode fingers on the positive side of the input side IDT connected to the feed conductor (pass bar)
  • 10 08 are Input side 'IDT's negative electrode finger connected to the feed conductor (bus bar)
  • 1 0 9 is the output side IDT's positive electrode finger connected to the feed conductor (bus bar)
  • 1 1 0 is the feed conductor It is the electrode finger on the negative side of the output side IDT connected to the (bus bar).
  • 1 1 2 and 1 1 3 are the positive side and negative side input side feed conductors (bus), 1 1 4 and 1 1 5 are each positive side And an output-side power supply conductor (bus bar) on the negative electrode side.
  • 1 2 3 is the X axis that is the phase propagation direction of the surface acoustic wave to be used, 1 2 1 is a signal source for driving this element, and 1 2 2 is an impedance ZL that becomes a load of this element.
  • 1 1 6 is the output side IDT 1 0 4 part corresponding to section C
  • 1 1 7 is the output side IDT 1 0 4 part corresponding to section E
  • 1 1 9 is the input side IDT corresponding to section C
  • the parts 1 0 3 and 1 2 0 are the input side IDTs 1 0 and 3 corresponding to the section E.
  • 1 1 8 A and 1 1 8 B are the control- ⁇ ⁇ ID .T 1 0 5 parts corresponding to section C and section E, respectively.
  • the input side IDT 1 0 3j is continuously arranged between section C and section E.
  • the output side I DT 1 0 4 is also continuously connected with section C and section E. It is arranged and configured.
  • IDT 1 0 5 for control consists of section C and section E arranged alternately and continuously.
  • a pair of reflectors 1 0 1 and 1 0 2 are arranged on both sides in the X-axis direction of the input side IDT 10 3 and the output side IDT 1 0 4 thus configured.
  • the reflectors 1 0 1 and 1 0 2 may be omitted, but adding them can significantly improve the characteristics of the device.
  • Figure 2 is a partial plan view of the IDT.
  • the IDT 1 3 0 is arranged so that, for example, the electrode finger 13 1 on the positive electrode side and the electrode finger 13 2 on the negative electrode side are held together.
  • the IDT electrode period length in section C is PC, and the IDT electrode period length in section E is PE.
  • PR is the electrode period length of the conductor strip in the reflector.
  • the pair of positive and negative electrode fingers is called a pair, and the sum of the number of electrode fingers in the entire input side and output side I D T is M.
  • the number of electrode fingers in section C is MC
  • the number of electrode fingers in section E is ME
  • the number of electrode fingers in control I D T is MK.
  • the width at which the positive electrode finger 1 3 1 and the negative electrode finger 1 3 2 intersect is defined as the electrode finger cross width WC
  • this electrode finger cross width WC is defined with respect to the surface acoustic wave wavelength. Expressed in multiples.
  • section C has one pair of IDT electrode fingers 3 ⁇ 4 "MC, while section ⁇ has one pair of electrode fingers ME, and section E has an electrode finger pair E.
  • Each of them is connected to a power supply conductor, and the state of being connected to this power supply conductor means that an electrical connection has been made.
  • the width L of each electrode finger is the wavelength of the surface acoustic wave that propagates. Is set to a dimension of 4.
  • the ratio P EZP C of the electrode period length between section C and section E is set within the range of 0.8 ⁇ PE / PC ⁇ 1.
  • the co-insulator type SAW filter of the present example is obtained by cutting out a piezoelectric plate 1.00 from a piezoelectric material such as quartz crystal and polishing the surface thereof.
  • Input side IDT 1 0 3 and output side IDT in which electrode fingers of a number of parallel conductors made of, for example, metal aluminum are periodically arranged perpendicular to the phase propagation direction of surface acoustic waves such as SS BW type Configure 1 0 4
  • a control IDT 1 0 5 is provided between the input side IDT 1 0 3 and the output side IDT 1 0 4 for controlling the state of the surface acoustic wave.
  • the surface acoustic wave generated at the input side IDT 10 3 is reflected by a pair of reflectors 1 0 1 and 1 0 2 to form a standing wave vibration state for use.
  • a natural resonance mode to be generated is generated.
  • These eigenmodes are the three * vibration states of fundamental wave symmetric mode S0, fundamental wave oblique symmetric mode AO, and primary symmetric mode S1 in which vibration displacement changes in the X-axis direction.
  • a vertical triple mode SAW filter is configured.
  • the reflection coefficient ⁇ ce of the surface acoustic wave indicated by one equivalent electrode finger of the entire IDT, in which section C and section E are arranged alternately is 0.0 1 Is in the range of 0.02 to 5.
  • the reason why the reflection coefficient ⁇ ce is referred to as an equivalent reflection coefficient is that the reflection coefficient formed by the entire IDT generated by the electrode finger arrangement structure in the above-described section C and section E with different electrode period lengths is the total IDT reflection coefficient. This is to obtain a converted value divided by the number of electrodes.
  • the piezoelectric flat plate 100 and the electrode of the IDT (1 0 3, 1 0 4, 1-0 5 etc.).
  • the reflection coefficient ⁇ of the surface acoustic wave indicated by one finger is 0_. In the case where the force is in the range above 0, this is the means of the present invention.
  • the piezoelectric plate 100 is a quartz STW substrate, and the IDT is formed of aluminum metal, and the reflection coefficient ⁇ of the surface acoustic wave indicated by one electrode finger ⁇ Is 0. 0 5 ⁇ 0..0 2, and the number of electrode fingers MC and ME in each of the sections C and E is one pair, and the electrode fingers 1 1 1 in the control IDT 1 0 5
  • the logarithm MK ranges from 10 to 30 pairs.
  • the electrode fingers of section C and section E are connected to the feed conductors 1 1 2, 1 1 1 3, 1 1 4, 1 1 5, and the electrode fingers of the input side IDT 1 0 3 and the output side IDT 1 0 4
  • the sum M is 8 0 ⁇ 10 pairs.
  • the crystal S TW cut substrate is a crystal plate that is rotated 35 to 38 degrees counterclockwise around the crystal axis about the electrical axis (X axis) and displays Euler angles. (, ⁇ , ⁇ ) And (0 °, 1 2 5 to 1 2 8 °, 90 °).
  • the IDs are arranged so that the propagation direction of the surface acoustic wave is in the same direction as the optical axis after the rotation of the quartz plate.
  • FIG. 3 An example of the detailed setting of the electrode period length ⁇ (X) corresponding to this configuration condition is shown in FIG.
  • the horizontal axis is the X-coordinate position of the element
  • the vertical axis is the ratio P (X) ZPC of P (X) to the electrode period length PC of the section.
  • Fig. 4 explains the structure and operation of the device of this example.
  • Fig. 4 shows the IDT that takes a periodic structure consisting of section C and section E as shown in Fig. 1, using the "frequency potential design method". This is what is displayed.
  • 20.0 and 20_2 are: the intervals described above. It is a block ⁇ ..., .... 20 1 .. and 203 are blocks consisting of section E.
  • the white circles 2 0 4 etc. on the dispersion curve indicate the operating points of surface acoustic waves generated by IDT, and the right traveling wave and left traveling wave indicated by the arrows 2 0 8 are generated.
  • the frequency difference amount D indicated by 26 is the frequency change rate display described above, and is the frequency potential difference between Section C and Section E.
  • the frequency difference amount D FTPC — It is related to FTPE.
  • the normal type transversal filter is an element that does not have the reflectors 1 0 1 and 1 0 2 in FIG.
  • Fig. 5 shows the physical characteristics of the reflection phenomenon of elastic surface waves in which I D T as shown in Fig. 4 has a circumferential structure. ..
  • the vertical axis in the figure is the frequency axis F
  • the horizontal axis located on the right half of the frequency axis F represents the magnitude of the reflection coefficient ⁇
  • the horizontal axis located on the left half is the phase of the reflection coefficient ⁇ .
  • the angle is 0, which corresponds to the phase angle 0 of the reflected wave.
  • the characteristic curve 5 0 0 in the figure is the above Is the amplitude characteristic of the reflection coefficient ⁇ c in section C
  • 5 0 2 is the phase characteristic of the reflection coefficient ⁇ c.
  • a characteristic curve .5 0 1 shifted by +0.22 in terms of frequency change rate from the characteristic curve 500 is the amplitude characteristic of the reflection coefficient ⁇ e of the section ⁇ .
  • 5 0 3 is the phase characteristic of the reflection coefficient ⁇ e.
  • the electrode fingers in section C and section E are both connected to the feed conductor and excite surface acoustic waves.
  • the characteristic curve 500 is calculated based on the case where the number of electrode finger pairs MC in section C of electrode period length PC is 4 and the reflection coefficient ⁇ indicated by one electrode finger is 0.05.
  • the frequency at which the reflection coefficient ⁇ 0 indicates that the surface acoustic wave passes, and the incident wave passes through the section C without being reflected.
  • the stop band width BW which is the width of the lower propagation point and the upper propagation point, is a large width of 0.25 (25%). This is because the electrode finger has a large reflection coefficient ⁇ and a logarithmic MP of 4 pairs.
  • the characteristic curve 5 0 1 is calculated in the same manner when the number of electrode finger pairs ME in the period E of the electrode period 'long PE is 4 and the reflection coefficient ⁇ per electrode finger is 0.05.
  • the characteristic curve 5 0 1 is a rise of the characteristic curve 5 0.0-0.
  • the stop band width BW of the curve 5 0 1 is 0.25 (25%), which is the same as section C.
  • the frequency in the vicinity of the operating points B 1 and B 2 becomes a non-reflection propagation band.
  • the above is the description of the phenomenon that forms the basis of the present invention.
  • the frequency increase is in the range of 0 to +0.22
  • the number of repetitions of section C and section E will be The total reflection coefficient takes a value between 1 and 0.
  • the characteristics shown in Fig. 5 can be interpreted as indicating this state.
  • section E a surface acoustic wave having a frequency corresponding to operating point B 1 is excited to form the fill characteristics of the element of the present invention.
  • the present invention is based on the above operation principle, the state is in the range reflection coefficient gamma c e is 0.0 1 Achieved 0.0 2 5 indicated equivalent one electrode fingers included in the total IDT of the section C and the section E It realizes a resonator-type SAW filter using three resonance states of the fundamental wave symmetric mode S0, the fundamental wave oblique symmetric mode A0, and the 'primary symmetric mode S1'.
  • Fig. 7 is a characteristic diagram of the reflection coefficient ⁇ exhibited by one electrode finger in a quartz STW force.
  • the S TW cuts in this characteristic diagram are expressed in Euler angles ( ⁇ , ⁇ , ⁇ ) and are (0 °, 1 27 ⁇ 1 °, 90). It is operated by the elastic wave called SS BW surface acoustic wave.
  • the horizontal axis in Fig. 7 is the ratio of the electrode finger conductor width L to the ratio of electrode-cycle length ⁇ to the line width ratio L.
  • the vertical axis represents one electrode finger. Reflection coefficient shown: y value in%.
  • a film thickness of at least about 100 nm is required, and the reflection coefficient ⁇ in this state is about 5 to 6%.
  • Fig. 8 uses an electrode finger having the reflection coefficient ⁇ described above on a piezoelectric plate.
  • ⁇ Schematic diagram showing the state in which the vertical triple mode SAW resonator of this example is constructed.
  • 7 0 0 is a piezoelectric plate
  • 7 0 1 and 7 0 2 is a reflector
  • 7 0 3 and 7 04 are IDTs on the input and output sides
  • 7 0 5 is a control IDT area, which are configured by alternately arranging Section C and Section E.
  • the relative value of the vibration displacement distribution U (X) of the inherent resonance mode used in the element is illustrated in correspondence with the X-axis position of 7 09 of the element.
  • 7 0 6 is a fundamental wave symmetric mode S 0 having a vibration displacement distribution almost symmetrical with respect to the center position in the direction X in which the surface acoustic wave propagates, and 7 0 7 is about the center position described in Sti.
  • This is the basic 10-wave oblique symmetry mode A 0 with oblique vibration displacement distribution
  • 7 0 8 is first order symmetry with two nodes in the vibration displacement distribution and almost symmetrical with respect to the central position.
  • the horizontal axis of this figure is the frequency change rate d f f (p p m), and the vertical axis is the amount of operating transmission of the filter S ⁇ (f) expressed in decibels (d B).
  • ⁇ is frequency.
  • the characteristic curve 8 0 0, 8 0 1 indicating the peak indicates the passband width of the filter, and 25 ′, it can be seen that it has a narrow band characteristic with a single peak.
  • the present invention provides a means for improving such a unimodal characteristic state and having a wide pass bandwidth.
  • the characteristic curve 9 0 1 shows the transmission characteristic of the filter, and the specific bandwidth of the passband is 12.0 0 J) pm.
  • the characteristic curve 9 0 2 shows the transmission characteristics of the filter, and the specific bandwidth of the passband is about 100 ppm. The meaning of Fig.
  • the passband width can be widened by reducing the sum M of the number of pairs of electrode fingers on the input side and output side I DT as a whole, and if the reflection coefficient ⁇ is reduced, the input side and output This means that even if the sum of the number of electrode fingers in the entire side ID ⁇ is large, the passband width can be widened.
  • the present invention makes use of the above conclusion that the sum of the logarithm of the electrode fingers in the entire input side and output side IDT is reduced and the reflection coefficient ⁇ is reduced.
  • a resonator type S .. AW filter with a specific bandwidth of 400 ppm is realized. As pass ratio already mentioned in the prior art bandwidth about 5 0 0 p P .m it was limited. This is because the reflection coefficient ⁇ indicated by one electrode finger reaches 5 to 10% in the case of a practical electric pole thickness. ''
  • FIG. 11 shows the transmission characteristic 1 0 0 1 of the filter in the upper part, and the reflection characteristic 1 0 0 2 of the reflector constituting this element is shown in the lower part.
  • the center frequency f (Ref) of the reflector is matched with the center frequency f (IDT) of the passband width of the filter.
  • the electrode period length PR of the reflector was set to 0.96 8 PC.
  • the IDT electrode fingers are 20 pairs, and the reflection coefficient ⁇ of one electrode finger is 0.05.
  • Fig. 12 shows the amount of operating transmission S ⁇ (f) in decibels when the vertical triple mode SAW filter of Fig. 11 is connected in two stages.
  • the horizontal axis is the frequency change rate d f / f (p p m), and the vertical axis is the operating transmission amount S B (f) of the filter.
  • This element is designed so that the filter impedance is 50 ⁇ .
  • the operating frequency of this element is 1.5 GHz.
  • the transmission characteristics are as shown in the characteristic curve 1 1 0 0 in Fig. 1 2 (a), and the minimum value of the insertion loss is about 2. O dB, and the width of the flat region that is the passband ( The specific bandwidth is approximately 400 ppm.
  • 1 1 0 1 is the image impedance Z (f) ( ⁇ ) of the filter.
  • Characteristic curve 1 1 0 0 frequency 9 0 0 Near Q ppm is the first order symmetric mode S 1
  • near 1 2 0 0 0 ppm is the fundamental oblique symmetry mode A
  • 1 4 0 0 0 Near ppm is the fundamental symmetry mode S0.
  • FIG. 1 2 (b) shows the filter characteristics 1 1 0 2 when the frequency range is expanded.
  • the suppression characteristics outside are limited to about 5.0 dB except for narrow frequencies, and it can be seen that good characteristics are obtained.
  • ..1: 1.0.3 is the reflection characteristic of the reflector, and the reflection amount was multiplied by 100 times so that the relative position could be understood.
  • the above is the description of the present embodiment for the first problem.
  • the improvement results for the generation of the sideband component generated by this embodiment (second problem) will be described next.
  • the first cause is due to amplitude modulation due to the presence or absence of surface acoustic wave excitation in section C and section E of the input IDT
  • the second is the electrode period length PC in sections C and E, This is due to frequency modulation caused by different PEs. From the perspective of the cause of these sideband components, the situation in Figure 13 will be explained. .
  • Figure 13 shows the case where the electrode fingers of section E are connected to the power supply conductor, the electrode fingers of section C are not connected to the power supply conductor, and the number of electrode fingers NPM of section C and section E is changed. This is the situation of sidebands.
  • 1 2 0 0 is a desired passband
  • each peak of 1 2 0 1, 1 2 0 2, and 1 2 0 3 is a sideband component corresponding to the number of electrode fingers NPM.
  • the magnitude of these amplitudes is a big problem from 62 dB to 30 dB.
  • the NPM value is an even value, but the odd side value indicates the same sideband component value.
  • the sideband component is small when NPM is 2 or 6, and it is 6 2 dB.
  • the effective reflection coefficient indicated by one electrode finger is reduced. It is possible to easily realize a vertical triple mode resonator SAW filter with a reduced bandwidth.
  • the electrode fingers in section C and section E are electrically connected to excite the surface acoustic wave, the sideband components that cause noise can be made sufficiently small.
  • FIG. 15 is a schematic plan view illustrating an electrode pattern formed on a piezoelectric plate in one embodiment of the resonator type SAW filter according to the present invention.
  • 1 5 0 is quartz, piezoelectric plate made of L i T a 0 3 etc.
  • 1 5 1 and 1 5 2 are reflectors
  • 1 5 is the input side 1 01 ⁇ 1 5 4 is the output IDT
  • 1 5 5 is the control IDT
  • 1 5 6 A and 1 5 6 B are the conductor strips that make up the reflector
  • 1 5 7 is connected to the feed conductor (busbar) IDT positive electrode finger
  • 1 5 8 connected to the feed conductor (busbar)
  • IDT negative electrode finger connected to the feed conductor (busbar)
  • 1 5 9 connected to the feed conductor (buspar)
  • the electrode finger on the positive side of the output side I DT, and 160 is the electrode finger on the negative side of the output side IDT connected to the feeding conductor (bus bar).
  • 1 6 1 etc. are control IDT electrode fingers
  • 1 6 2 and 1 6 3 are the positive side and negative side input side feed conductors (busbars)
  • 1 6 4 and 1 6 5 are each positive side And the output-side power supply conductor (bus bar) on the negative electrode side.
  • 1 7 3 on the piezoelectric plate is the X axis that is the phase propagation direction of the surface acoustic wave to be used
  • 1 7 1 is the signal source for driving this element
  • 1 7 2 is the impedance that becomes the load of this element ZL.
  • 1 6 6 is the output IDT part corresponding to section G
  • 1 6 7. is the output IDT part corresponding to section H
  • 19 is the section.
  • D T. part, 1.7 0 ⁇ is the input side I D. T part corresponding to section H.
  • Sections 1 6 8 A and 1 6 8 B are control I D T sections having electrode period lengths P G and P H, respectively.
  • the input IDT 15 3 is configured by alternately arranging sections G and H alternately
  • the output IDT 15 4 is also configured by alternately arranging sections G and H alternately. It is configured.
  • the control IDT 1 5 5 is composed of section G and section H arranged alternately and continuously.
  • a pair of reflectors 1 5 1 and 1 5 2 are arranged on both sides in the X-axis direction of the input side IDT 15 3 3 and the output side IDT 1 5 4 thus configured.
  • the reflectors 1 5 1 and 1 5 2 may be omitted, but if added, the characteristics of the element can be significantly improved.
  • the section G is a positive or negative polarity component constituting the IDT.
  • the number of electrode fingers NG is one, while the section H is composed of one electrode finger NH having a polarity different from that of the section G, and the electrode fingers of the sections G and H are both fed. Connected to conductor.
  • the electrode period length P which is the sum of the electrode width dimension L and the inter-electrode dimension S, is P 2 L + S
  • the section G is' the electrode period length P is PG; Is assumed that the electrode period length P is PH.
  • the ratio PH // PG of the electrode period length between the section G and the section H is set in the range of 0.8 ⁇ P HZ PG ⁇ 1. '
  • the center frequency f (Ref) of the reflectors 15 1 and 15 2 is matched with the frequency f (IDT) at which the IDT of the section H is generated, and both frequencies are the IDT of the section G and
  • f (Ref) f (IDT) And set.
  • the elastic surface wave generated by the IDT on the input side is reflected by a pair of reflectors 1 5 1 and 1 5 2 to form a standing wave vibration state.
  • These eigenmodes are the fundamental wave symmetric mode S 0 and the fundamental wave oblique symmetric mode A 0 that change the vibration displacement in the X-axis direction, and the primary symmetric mode S 1 ⁇ three resonance states.
  • a vertical and triple mode SAW filter is constructed by combining the current images. ..
  • the difference from the conventional technique is that the reflection coefficient ⁇ gh indicated by one equivalent electrode finger of the entire IDT in which the sections G and H are alternately arranged has a reflection coefficient ⁇ gh of from 0.0 1 to 0.0 2 5 Is in the range.
  • the reflection coefficient ⁇ of the surface acoustic wave indicated by one electrode finger of the piezoelectric plate 1 5 0 and the I DT (1 5 3, 1 5 4, 1 5 5, etc.) is 0.0 3.
  • the means of the present invention is particularly effective.
  • the piezoelectric plate is a quartz STW force substrate, and the ID layer is made of aluminum metal, and the reflection coefficient of the surface acoustic wave indicated by one electrode finger is shown.
  • ⁇ is 0. 0 5 ⁇ 0. 0 2
  • the number of electrode fingers NG and NH in section G and section H is one, and the logarithm MK of electrode finger 16 1 in control IDT i 55 is in the range of 10 to 30 pairs.
  • the electrode fingers of the section G and the section H are connected to the power supply conductor, and the sum M of the electrode fingers of the input side IDT and the output side IDT is 40 ⁇ 10 pairs.
  • the crystal S TW cut substrate is a crystal plate that rotates the crystal ⁇ 3 ⁇ 4 about 35 ° to 38 ° counterclockwise around the electrical axis (X axis), and displays the angle of the boiler ( ⁇ , ⁇ ,) (0 °, 1 2 5 to 1 2 8 °, 90 °).
  • the IDs are arranged so that the propagation direction of the surface acoustic wave is in the direction of the optical axis after rotation of the quartz plate. .
  • the basic operating principle of the resonator type SAW filter configured as described above is the same as that described in FIG. 2, FIG. 3, FIG. 4, FIG. 5, FIG. 6, and FIG. . Further, in this example, the filter characteristics described in FIGS. 7, 11, and '12 also have similar results.
  • the difference between the first embodiment and the second embodiment is that there are differences in the number of electrode fingers constituting section 0 and section ⁇ of 10 pieces.
  • the effective reflection coefficient indicated by one electrode finger is reduced. It is possible to easily realize a vertical triple mode resonator SAW filter with a reduced bandwidth.
  • the electrode fingers in section G and section H are electrically connected to excite the surface acoustic wave, the sideband components that cause noise can be completely eliminated.
  • the structure and characteristics of the surface acoustic wave filter using the STW type surface acoustic wave have been described for the substrate made only of quartz.
  • the substrate is made of a material other than quartz, for example, a diamond substrate, even thin film such as S i 0 2, Z n O on the substrate surface is formed to the extent not such impair the characteristics of the device, add that it is valid as long as the configuration condition is satisfied of the present invention .
  • a vertical triple mode type resonator type S A W filter has been described as an example.
  • a vertical double mode type resonator type S A W filter may be used.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Cette invention concerne un filtre à ondes de surface de résonateur multimode longitudinal ayant une largeur de bande passante importante en annulant et en réduisant le coefficient de réflexion des doigts d'électrodes même si une électrode à 1/4 de longueur d'onde est utilisée. Ce filtre à ondes de surface de résonateur comprend une électrode côté entrée en forme de persienne résonant avec une onde acoustique de surface, une électrode côté sortie en forme de persienne recevant l'onde acoustique de surface oscillée par l'électrode côté entrée en forme de persienne, une électrode de commande en forme de persienne pour contrôler l'état de l'onde acoustique de surface, et une paire de réflecteurs. Les électrodes du côté entrée, du côté sortie et de commande en forme de persienne ont chacune deux types alternés de sections (C, E). Dans la section (C), la longueur de période de l'électrode P = L+S est PE, L étant la largeur de l'électrode, S étant l'intervalle entre les électrodes et le nombre de paires ME de l'électrode en forme de persienne étant un. Dans la section (E), la longueur de période de l'électrode P est PE et le nombre de paires ME de l'électrode en forme de persienne est un. Les doigts d'électrodes dans la section (C, E) sont tous connectés à un conducteur d'alimentation.
PCT/JP2005/012634 2004-07-06 2005-07-01 Filtre à ondes de surface de résonateur WO2006004199A1 (fr)

Priority Applications (3)

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JP2006528988A JP4432968B2 (ja) 2004-07-06 2005-07-01 共振子型ｓａｗフィルタ
US11/571,432 US7579932B2 (en) 2004-07-06 2005-07-01 Resonator SAW filter having a control interdigital transducer between input and output interdigital transducers
CN2005800230445A CN1981434B (zh) 2004-07-06 2005-07-01 谐振器型saw滤波器

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JP2004199425 2004-07-06
JP2004238059 2004-08-18
JP2004-238059 2004-08-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114337583A (zh) * 2021-12-03 2022-04-12 中国科学院上海微系统与信息技术研究所 一种声表面波谐振器
CN116405003A (zh) * 2023-03-15 2023-07-07 北京航天微电科技有限公司 镜像换能器电极宽度确定方法、装置、设备及滤波器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5652606B2 (ja) * 2010-12-03 2015-01-14 セイコーエプソン株式会社 弾性表面波共振子、弾性表面波発振器、及び電子機器
JP6445152B2 (ja) * 2016-01-29 2018-12-26 京セラ株式会社 弾性波共振子、弾性波フィルタ、分波器および通信装置
JP7095745B2 (ja) * 2018-10-18 2022-07-05 株式会社村田製作所 弾性波装置、帯域通過型フィルタ、デュプレクサ及びマルチプレクサ
TWI829483B (zh) * 2022-01-07 2024-01-11 三友電子股份有限公司 具有不同週期或柵欄間距之表面聲波共振裝置及其濾波器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132409A (ja) * 1990-09-25 1992-05-06 Hitachi Ltd 弾性表面波共振器
JPH08204502A (ja) * 1995-01-20 1996-08-09 Toyo Commun Equip Co Ltd 縦型複合４重モードｓａｗフィルタ
WO2000013316A1 (fr) * 1998-08-28 2000-03-09 Seiko Epson Corporation Filtre d'ondes de surface a plusieurs modes longitudinaux
JP2002528987A (ja) * 1998-10-28 2002-09-03 エプコス アクチエンゲゼルシャフト 少なくとも２つの表面波構造体を備えた表面波装置
JP2003179461A (ja) * 2001-09-28 2003-06-27 Seiko Epson Corp 縦多重モード型ｓａｗフィルタ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4616197A (en) 1985-12-05 1986-10-07 R. F. Monolithics, Inc. Resonator
US5220234A (en) 1992-03-02 1993-06-15 Hewlett-Packard Company Shear transverse wave device having selective trapping of wave energy
JP3310132B2 (ja) * 1995-04-27 2002-07-29 株式会社日立製作所 弾性表面波装置及びそれを用いたアンテナ分波器
JPH09321567A (ja) * 1996-05-28 1997-12-12 Showa Electric Wire & Cable Co Ltd 共振器型ｓａｗフィルタ
EP0961405A3 (fr) * 1998-05-27 2002-04-03 Kabushiki Kaisha Toshiba Dispositif à ondes acoustiques de surface
AU1709100A (en) 1998-10-26 2000-05-15 Emc Automation, Inc. Broadband antenna incorporating both electric and magnetic dipole radiators
JP3391346B2 (ja) * 2000-04-18 2003-03-31 株式会社村田製作所 縦結合共振子型弾性表面波フィルタ
JPWO2003003574A1 (ja) * 2001-06-29 2004-10-21 松下電器産業株式会社 弾性表面波フィルタ
EP1276235A1 (fr) * 2001-07-13 2003-01-15 Matsushita Electric Industrial Co., Ltd. Filtre à ondes acoustiques de surface et dispositif de communication l'utilisant
JP4090250B2 (ja) * 2001-12-10 2008-05-28 富士通メディアデバイス株式会社 弾性表面波フィルタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132409A (ja) * 1990-09-25 1992-05-06 Hitachi Ltd 弾性表面波共振器
JPH08204502A (ja) * 1995-01-20 1996-08-09 Toyo Commun Equip Co Ltd 縦型複合４重モードｓａｗフィルタ
WO2000013316A1 (fr) * 1998-08-28 2000-03-09 Seiko Epson Corporation Filtre d'ondes de surface a plusieurs modes longitudinaux
JP2002528987A (ja) * 1998-10-28 2002-09-03 エプコス アクチエンゲゼルシャフト 少なくとも２つの表面波構造体を備えた表面波装置
JP2003179461A (ja) * 2001-09-28 2003-06-27 Seiko Epson Corp 縦多重モード型ｓａｗフィルタ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114337583A (zh) * 2021-12-03 2022-04-12 中国科学院上海微系统与信息技术研究所 一种声表面波谐振器
CN114337583B (zh) * 2021-12-03 2024-03-29 中国科学院上海微系统与信息技术研究所 一种声表面波谐振器
CN116405003A (zh) * 2023-03-15 2023-07-07 北京航天微电科技有限公司 镜像换能器电极宽度确定方法、装置、设备及滤波器
CN116405003B (zh) * 2023-03-15 2023-12-26 北京航天微电科技有限公司 镜像换能器电极宽度确定方法、装置、设备及滤波器

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CN1981434A (zh) 2007-06-13
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JPWO2006004199A1 (ja) 2008-04-24
CN1981434B (zh) 2011-10-26
US7579932B2 (en) 2009-08-25

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