WO2005117080A1 - Générateur de plasma, appareil de traitement de plasma utilisant ledit générateur et dispositif électronique - Google Patents

Générateur de plasma, appareil de traitement de plasma utilisant ledit générateur et dispositif électronique Download PDF

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Publication number
WO2005117080A1
WO2005117080A1 PCT/JP2005/009459 JP2005009459W WO2005117080A1 WO 2005117080 A1 WO2005117080 A1 WO 2005117080A1 JP 2005009459 W JP2005009459 W JP 2005009459W WO 2005117080 A1 WO2005117080 A1 WO 2005117080A1
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WO
WIPO (PCT)
Prior art keywords
plasma
temperature
plasma generator
generator according
chamber
Prior art date
Application number
PCT/JP2005/009459
Other languages
English (en)
Japanese (ja)
Inventor
Hiroyuki Ito
Bunji Mizuno
Yuichiro Sasaki
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Publication of WO2005117080A1 publication Critical patent/WO2005117080A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

Definitions

  • Plasma generator Plasma generator, plasma processing apparatus using the same, and electronic equipment
  • the present invention relates to a plasma generator, a plasma processing apparatus and an electronic apparatus using the same, and more particularly to a method of applying a kinetic energy after ionizing a substance, and particularly using ion implantation, plasma doping, and the like. It relates to temperature control in surface treatment such as plasma surface treatment.
  • a switching transistor composed of a thin film transistor is also being miniaturized. Under such circumstances, the amount of current flowing through the transistor tends to increase, for example, the energy of ions required in forming the source and drain regions of the transistor is low, such as low energy current.
  • FIG. 8 is a sectional structural view of a main part of a microwave plasma source for an ion implanter.
  • a high frequency wave 120 is introduced into a waveguide 110 connected to the plasma chamber 100 and guided through the plasma chamber 100. This energy is controlled by the solenoid coil 130 so that there is no loss, and plasma is generated in the plasma chamber 100. Pull it out to get ion beam 140 You can do it.
  • the present invention has a temperature control function in or near a plasma chamber having an ion source.
  • a channel for passing the refrigerant and a heater for heating are provided on a part or all of the wall forming the plasma chamber of the plasma source, or a temperature control plate that can be in close contact with or close to the plasma chamber is provided near the plasma chamber.
  • a plasma generating apparatus of the present invention includes a plasma generating chamber, plasma generating means for generating plasma in the plasma generating chamber, and temperature adjusting means for adjusting the temperature of plasma generated by the plasma generating means. It is characterized by having done.
  • the plasma chamber can be cooled and the temperature of the external field in contact with the plasma, that is, the temperature of the wall of the plasma chamber can be reduced, so that the plasma can be generated with high efficiency.
  • the plasma generator of the present invention includes a plasma generator in which the temperature adjusting means adjusts the temperature of a raw material gas for generating plasma.
  • a desired plasma source can be efficiently obtained by controlling the temperature of the source gas.
  • the plasma generator of the present invention includes a plasma generator in which the temperature adjusting means is provided in the plasma generation chamber.
  • the plasma generator of the present invention includes one in which the temperature adjusting means is provided on a wall of the plasma generation chamber.
  • the temperature can be more efficiently adjusted by adjusting the temperature of the outside world in contact with the plasma, that is, the temperature of the wall of the plasma chamber.
  • the temperature adjusting means is a temperature adjusting block disposed so as to surround the plasma generating chamber.
  • the temperature can be more efficiently adjusted by being detachable, easy to handle, and by adjusting the distance to the plasma generation chamber or by inserting a member whose thermal conductivity is adjusted between them. Can be.
  • the temperature adjustment block can adjust an interval between the temperature adjustment block and the plasma generation chamber.
  • the temperature adjustment unit is provided in the plasma generation unit. It is characterized by being beaten.
  • the plasma generator of the present invention includes a plasma generator in which the temperature adjusting means is provided on a filament constituting the plasma generating means.
  • the plasma generator of the present invention includes a plasma generator in which the temperature adjusting means is arranged near the filament.
  • the plasma generating apparatus of the present invention includes an apparatus for performing temperature adjustment so that the temperature adjusting means can obtain a predetermined beam current.
  • the plasma density can be controlled with high accuracy.
  • the plasma generator of the present invention includes one in which the temperature adjusting means is capable of adjusting a flow rate of a fluid as a heat medium.
  • the temperature can be adjusted only by adjusting the flow rate of the fluid serving as the heat medium.
  • the plasma generator of the present invention includes a plasma generator in which the temperature adjusting means is capable of adjusting the thermal conductivity of a fluid as a heat medium.
  • the plasma generator of the present invention includes one in which the temperature adjusting means is capable of controlling the temperature by a spatial position.
  • the plasma generating apparatus of the present invention includes an apparatus configured to perform plasma processing on a substrate to be processed.
  • the method for manufacturing an electronic device of the present invention includes a step of forming an electronic device by performing a plasma treatment on a substrate to be processed.
  • An electronic device of the present invention uses the above-described plasma generator to generate a plasma on a substrate to be processed. It is formed by performing processing.
  • the plasma generator of the present invention includes the following.
  • a plasma generator having a temperature adjustment function (1) A plasma generator having a temperature adjustment function.
  • the plasma generator having a temperature control function, wherein the type of the plasma generator is a high-frequency plasma generator.
  • a method for producing an electronic device characterized in that the electronic device is produced using the above-mentioned mechanical device or a mechanical device having characteristics of a plasma generator of this mechanical device.
  • FIG. 1 is a three-dimensional structural view of an example in which a cooling and heating mechanism is embedded in a constituent wall of a plasma chamber.
  • FIG. 2 is a cross-sectional view from three directions of an example in which a cooling and heating mechanism is embedded in a constituent wall of a plasma chamber.
  • FIG. 3 is a three-dimensional structure diagram of an example in which a temperature control panel is installed near the plasma chamber.
  • FIG. 4 is a cross-sectional structure diagram of an example in which a temperature control panel is installed near the plasma chamber.
  • FIG. 5 is a cross-sectional structural view from three directions of an example in which a cooling and heating mechanism is embedded in a constituent wall of a plasma chamber of a DC plasma generator requiring a filament.
  • Fig. 6 is a sectional structural view for explaining an ion implanter.
  • FIG. 7 is a sectional structural view for explaining the basic principle of plasma doping.
  • this high-frequency plasma generator is a three-dimensional structure diagram of the plasma chamber 100 taken out of FIG. 8 described in the background art, and FIG. It is represented by a sectional view.
  • a part or all of the plasma chamber 100 connected to the high-frequency waveguide is made of ceramic, an electrical insulator, or the like so that high-frequency waves can enter.
  • a gas that is a source of generating plasma is introduced into the plasma chamber.
  • a substance that is difficult to obtain in a gas state is introduced in a solid or liquid state (material introduction means such as gas is expressed in a drawing,,,,).
  • the introduced substance is supplied to the plasma chamber in the form of gas or other gasified or mixed gas, and is energized by high frequency to generate plasma.
  • a channel is formed in a plasma chamber, and a coolant or a fluid having good heat conductivity is flowed and cooled using the channel.
  • a good material for the plasma chamber is selected in consideration of thermal conductivity. That is, in FIG. 1, for example, a cooling pipe 160 is pierced in the constituent material of the plasma chamber 100, and a path is provided in another part, and a heater 170 is installed here. As described above, the cooling or heating is performed by the cooling pipe 160 and the heater 170, but the cooling pipe 160 and the heater 170 can be installed at the same time. It is also possible to control its own temperature by feedback-controlling the current flowing through the temperature monitor 180 via the temperature monitor 180.
  • a device 180 having a temperature monitoring function was embedded in the constituent wall of the plasma chamber 100. This may be brought into contact, or a method such as measuring infrared rays without contact may be adopted.
  • Fig. 2 is an exploded view of the three-dimensional structure diagram of Fig. 1 is there. Looking at the top view, there is a wall constituting the plasma chamber around the plasma chamber, and the cooling pipe 160, the heater 170, and the temperature monitoring device 180 are installed inside the wall.
  • the desired molecular ions are obtained by controlling the wall temperature of the plasma chamber using this apparatus.
  • the cooling function is mainly used, and the temperature is controlled using the cooling pipe 160 and the heater 170 while feeding back via the temperature monitoring device 180 so that the wall temperature can be maintained at 100 ° C. .
  • a second method for adjusting the temperature of the wall of the plasma chamber is employed. This method will be described with reference to FIGS.
  • This method uses a functional component equipped with a temperature control plate 200 as a cooling mechanism adjacent to the plasma chamber when it is difficult or inappropriate to secure a flow path inside the plasma chamber due to the nature of the material of the plasma chamber. It is installed, and He, which is a gas with good thermal conductivity, is flowed through the gap 210 between the plasma chamber and the functional components to remove heat and cool it.
  • the temperature control plate 200 as described above, the cooling pipe 160 and the heater 170 are installed.
  • FIG. 4 is a sectional structural view of the three-dimensional structural view of FIG. 3 as viewed from one direction.
  • the cooling function is mainly used, and the temperature is controlled using the cooling pipe 160 and the heater 170 while feeding back via the temperature monitoring device 180 so that the wall temperature can be maintained at 100 ° C. .
  • the distance between the plasma chamber and the temperature control plate 200 can be changed mechanically. Thereby, the gap 210 between the plasma chamber 100 and the temperature control plate 200 can be adjusted, and the distance related to heat conduction can be controlled to achieve a predetermined wall temperature. Also, the gap between the plasma chamber 100 and the temperature control plate 200 It is also possible to set 10 to zero and make it completely in contact.
  • the force using He as a gas having good heat conductivity is not limited to He, and can be appropriately selected.
  • Cooling and heating can be similarly realized using a similar device, but in the case of heating, as a third method, radiant heating can be performed using an infrared lamp 220 as shown in FIG. That is, a functional component capable of holding a heating means such as an infrared lamp is installed, and the temperature is increased mainly by radiant heat.
  • the wall temperature of the plasma chamber 100 rises, and even in a high-frequency plasma generator, it becomes possible to generate an atom ion plasma predominantly.
  • a molecular ion plasma in a DC plasma generator having a filament 224, can be generated by cooling the filament 224 by flowing a coolant through a cooling pipe 160. it can.
  • DC plasma generators with filaments are widely used as plasma sources in semiconductor ion implanters.
  • the main purpose of this device is to generate a large amount of atomic ion plasma, The goal was to accelerate the ions to high energy and implant them into the semiconductor substrate.
  • thermoelectrons are generated to generate plasma.
  • a channel is formed in the constituent wall of the plasma chamber 100 to function as a cooling pipe 160, and a fluid such as a refrigerant is introduced into the cooling chamber 160 for cooling. Is it difficult to drill a channel directly into the plasma chamber?
  • a temperature control plate including a cooling pipe 160 and the like may be provided.
  • introduction of a gas having high thermal conductivity, such as helium, partially into the plasma chamber is also effective for cooling the plasma chamber.
  • the plasma can be controlled by adjusting the temperature of the filament.
  • the ion implanter has, as a rule, an electromagnetic field application mechanism for separating energy and substances by using the plasma source described above as a source of ions.
  • the purpose is to inject a necessary substance with a predetermined energy into a target object, for example, a silicon semiconductor substrate in the semiconductor industry.
  • a plasma source 230 is used as an ion source, and the generated ions are extracted by an extraction electrode 240. It is extracted to form an ion beam 140. In order to analyze this beam, the energy is adjusted to a predetermined energy by the post-acceleration / deceleration electrode 270 via the mass analysis magnet 260, and arrives at the antenna 280. Since the ion implanter is a vacuum device, several vacuum pumps 290 are installed, and a charge neutralization device 300 for neutralizing the charge of ions is installed.
  • Example 1 of the present invention describes an example in which BH was introduced as a gas for plasma generation.
  • boron atomic ions are introduced into the semiconductor substrate as B + or BF +.
  • a plasma density of 10 14 3 2 6 is obtained, a current amount 10 times equivalent can be obtained equivalently, and doping can be performed with energy reduced to 1/10.
  • the current amount of a 1 KEV ion implanter that can be used industrially is IMA, doping can be equivalently performed at 10 MA with energy of 100 EV.
  • the original density of the plasma source decreases, the original purpose cannot be achieved.
  • the device for the plasma chamber of the present invention is adopted, and if the plasma source 230 described in Fig. 6 is replaced with the plasma generator already described in the present invention, the limited plasma chamber of the same ion implanter is used. It is possible to efficiently generate the plasma density obtained with the size of. Therefore, even if molecular ions are generated, a sufficiently large amount of current can be obtained. In addition, if the plasma generator can be mounted on an ion implanter already in use, the life of the apparatus can be extended and waste can be reduced.
  • FIG. 7 is a conceptual cross-sectional view in which a wafer 280 as an object to be processed is installed inside the plasma chamber 100 of FIG.
  • plasma processing that is, plasma doping is performed.
  • the heating or cooling of the plasma chamber can be used in two more ways.
  • the decomposition of the doping gas is suppressed, and the molecular ion plasma can be generated with higher efficiency.
  • the ion implanter includes the high-frequency plasma source. Or a DC plasma source.
  • the current was taken out. This is equivalent to an energy of 150 EV and a current of 5 MA in terms of boron atoms. This boron was applied to the so-called source-drain extension of MOS transistors. A junction with a depth of 15 NM and a sheet resistance of 1000 ⁇ / port was obtained, and it was applied to a MOS transistor with a gate length of 25 NM.
  • a technology for extracting different ion species including atoms and molecules at a high current without changing the plasma source, such as an ion implanter in semiconductor manufacturing, is extremely demanding, especially in a factory that requires mass production. The economic effect of high productivity can be demonstrated.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

Il est prévu un générateur de plasma capable de générer de manière efficace à la fois des ions moléculaires et des ions atomiques à l’aide d’une seule source ionique. En prévoyant un canal pour faire passer un réfrigérant, et un radiateur pour chauffer dans une partie de la paroi, ou dans cette dernière toute entière, définissant la chambre à plasma de la source de plasma, ou en prévoyant une plaque de régulation de température au voisinage de la chambre à plasma de telle sorte que la plaque de régulation de température soit proche de ou en contact étroit avec la chambre à plasma, la température du gaz dans la chambre à plasma est régulée in situ, et des types d’ions différents peuvent ainsi être générés de manière extrêmement efficace comme des ions moléculaires et des ions atomiques sans extraire la source de plasma.
PCT/JP2005/009459 2004-05-25 2005-05-24 Générateur de plasma, appareil de traitement de plasma utilisant ledit générateur et dispositif électronique WO2005117080A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004183111A JP2007266022A (ja) 2004-05-25 2004-05-25 プラズマ発生装置、これを用いたプラズマ処理装置および電子機器
JP2004-183111 2004-05-25

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Publication Number Publication Date
WO2005117080A1 true WO2005117080A1 (fr) 2005-12-08

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JP7414602B2 (ja) 2020-03-18 2024-01-16 住友重機械イオンテクノロジー株式会社 イオン生成装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002048425A2 (fr) * 2000-12-15 2002-06-20 Axcelis Technologies, Inc. Procede et systeme pour l'implantation d'icosaborane
JP2003303784A (ja) * 2002-04-05 2003-10-24 Semiconductor Energy Lab Co Ltd イオンドーピング装置及びイオンドーピング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002048425A2 (fr) * 2000-12-15 2002-06-20 Axcelis Technologies, Inc. Procede et systeme pour l'implantation d'icosaborane
JP2003303784A (ja) * 2002-04-05 2003-10-24 Semiconductor Energy Lab Co Ltd イオンドーピング装置及びイオンドーピング方法

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JP2007266022A (ja) 2007-10-11

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