WO2005101651A1 - Dispositif actif haute fréquence - Google Patents

Dispositif actif haute fréquence Download PDF

Info

Publication number
WO2005101651A1
WO2005101651A1 PCT/JP2005/002121 JP2005002121W WO2005101651A1 WO 2005101651 A1 WO2005101651 A1 WO 2005101651A1 JP 2005002121 W JP2005002121 W JP 2005002121W WO 2005101651 A1 WO2005101651 A1 WO 2005101651A1
Authority
WO
WIPO (PCT)
Prior art keywords
line
slot
active device
frequency
cut
Prior art date
Application number
PCT/JP2005/002121
Other languages
English (en)
Japanese (ja)
Inventor
Hiroyasu Matsuzaki
Koichi Sakamoto
Shigeyuki Mikami
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to JP2006512272A priority Critical patent/JP4211061B2/ja
Publication of WO2005101651A1 publication Critical patent/WO2005101651A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices

Definitions

  • the present invention relates to a high-frequency active device used in a millimeter-wave band or a microwave band.
  • slot line facilitates connection with a semiconductor element and the like and allows a balanced high-frequency signal to be propagated.
  • Slot lines are being used for input / output lines for high-frequency signals and some modules (for example, Patent Document 1).
  • FIG. 11 is a schematic plan view showing the high-frequency active device of Patent Document 1.
  • this high-frequency active device is a high-frequency amplifier, and has a configuration in which an FET 200 is mounted on slot lines 100 and 101 for high-frequency transmission.
  • the slot lines 100 and 101 are arranged in a straight line, and the parallel slot lines IOC) 'and 101 are bent at right angles.These are connected to the ends of these slot lines 100 and 101 to generate the high-frequency signal M3. It extends to the length of 1Z4 of the wavelength.
  • a DC (direct current) cut circuit 110 is formed on the extension of the slot lines 10 (, 101 '.
  • the DC cut circuit 110 has a fixed width which also extends the force of the slot lines 10 (, 101'. It consists of thin DC cut lines 111, 112 and substantially circular stubs 113, 114 formed on these DC cut lines 111, 112. This allows the substrate 300 to have a ground electrode 301, a gate electrode 302, and a drain electrode 303.
  • the FET 200 is mounted on the substrate 300 with the source terminal S connected to the ground electrode 301, the gate terminal G connected to the gate electrode 302, and the drain terminal D connected to the drain electrode 303. Then, a DC voltage is supplied from the gate electrode 302 and the drain electrode 303 to the gate terminal G and the drain terminal D of the FET 200.
  • the high-frequency signal M input from the slot line 100 is amplified by the FET 200 and output from the slot line 101.
  • the DC cut circuit 110 The stubs 113 and 114 prevent the high-frequency signal M3 from leaking to these slot lines 10 (, 101 ').
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2002-280847
  • the high-frequency signal M3 propagating through the slot lines 100 and 101 is a signal whose frequency is prevented from leaking to the slot lines 10 and 101 by the DC cut circuit 110.
  • the high-frequency signal outside the band of 114 flows into the slot line 10 (, 101 'side.
  • the DC cut lines 111 and 112 are microstrip lines and coplanar lines forming electrodes, the electromagnetic waves of the high-frequency signal Therefore, if the DC supply line is connected to the end of the substrate 300, the DC cut lines 111 and 112 do not suddenly appear open at the end of the substrate.
  • the DC cut lines 111 and 112 are slot lines, and allow the electromagnetic wave to propagate in the groove between the gate electrode 302 and the drain electrode 303. For this reason, even when the DC supply line is connected to the end of the substrate, the open ends 111a and 112a of the DC cut lines 111 and 112 suddenly appear to be open. That is, the impedance at the open ends 11 la and 112 a suddenly increases in view of the DC cut line 111 and 112 side forces. For this reason, the electromagnetic waves that have propagated through the DC cut lines 111 and 112 may be reflected at the opening ends 11 la and 112 a, and parasitic oscillation may occur.
  • the present invention has been made to solve the above-described problem, and has an object to provide a high-frequency active device in which parasitic oscillation due to a reflected wave in a DC cut line is suppressed to improve operation characteristics.
  • a high-frequency active device includes an input slot line and an output slot line formed on a substrate, and the input slot line or the output slot line. At least one force of the line is also branched, one or more DC cut lines having an opening at the end of the board and having a short stub of a predetermined length in the middle, and a force on the input slot line side mounted on the board and input.
  • a high-frequency active device comprising: a transistor that outputs a signal on a line side; wherein a reflection suppressing unit that opens at a DC cut line with a slot width larger than a slot width at a short stub forming position is formed at an end of a substrate in a DC cut line.
  • the high-frequency signal input to the input slot line is processed in the transistor and output from the output slot line. Also, the high-frequency signal that has flowed into the DC cut line reaches the inside of the reflection suppression unit and is radiated by its aperture force. At this time, the reflection suppressing section is opened with a slot width larger than the slot width at the position where the short stub is formed. Therefore, a sudden change in impedance at the opening is reduced, and reflection at the opening is reduced.
  • the reflection suppressing section is a tapered slot line that linearly increases the slot width toward the edge of the substrate.
  • the powerful configuration not only mitigates the sudden change in impedance at the aperture, but also reduces the impedance of the reflection suppressor linearly.Therefore, impedance matching can be achieved at the connection between the DC cut line and the reflection suppressor. There is almost no reflected wave at the strong connection.
  • a third aspect of the present invention is the high-frequency active device according to the first aspect, wherein the reflection suppressing section is a tapered slot line curved toward the end of the substrate.
  • a fourth aspect of the present invention is the high-frequency active device according to the first aspect, wherein the reflection suppressing section is a tapered slot line that gradually increases the slot width toward the edge of the substrate.
  • a fifth aspect of the present invention is the high-frequency active device according to the first aspect, wherein the reflection suppressing unit is a rectangular slot having a constant slot width opened at an end of the substrate.
  • the reflection suppressing section is configured such that a rectangular slot having substantially the same slot width as the rectangular opening slot is formed through a small slot width slot line.
  • the configuration is a skewered slot line connected as described above.
  • a seventh aspect of the present invention is the high-frequency active device according to any one of the first to sixth aspects, wherein the opening of the reflection suppressing section is closed with a first radio wave absorber. Due to the powerful structure, the aperture force of the reflection suppression unit allows the radio wave of the radiated signal to be absorbed by the radio wave absorber.
  • the invention according to claim 8 is the high-frequency active device according to any one of claims 1 to 7, wherein a part or all of the upper part of the reflection suppressing unit is covered with a second radio wave absorber. Configuration.
  • the radio wave of the signal radiated above the reflection suppressing unit is absorbed by the radio wave absorber.
  • the length of the short stub of the DC cut line is set to 1Z4, which is the wavelength of the high-frequency signal to be transmitted.
  • the position where the short stub is formed is set to the position of 1Z4 of the wavelength of the high-frequency signal from the branch point.
  • the powerful structure prevents the high-frequency signal required for short stub force transmission from flowing into the DC cut line.
  • the invention according to claim 10 is the high-frequency active device according to any one of claims 1 to 9, wherein one or more short stubs for stopping a high-frequency signal of a predetermined wavelength other than the transmission high-frequency signal are connected to the DC. It is configured to follow the cut line.
  • the powerful configuration prevents multiple signals required for transmission of multiple short stub forces from flowing into the DC cut line.
  • the invention according to claim 11 is the high-frequency active device according to any one of claims 1 to 10, wherein the one or more DC cut lines are the first and second DC cut lines branched in parallel from the input slot line. 2 DC cut line, and 3rd and 4th branches parallel to the output slot line
  • the transistor has a gate terminal, a drain terminal, and a source terminal, and the gate terminal is connected to the first DC electrode separated by the first and second DC cut lines.
  • the drain terminal is connected to the second DC electrode separated by the third and fourth DC cut lines, and the source terminal is connected to the input slot line, the first DC cut line, the output slot line, and the third DC cut line.
  • the ground electrode separated by the DC cut line is the ground electrode separated by the DC cut line.
  • the first and second DC cut lines that separate the first DC electrode connected to the gate terminal of the transistor and the third and second DC electrodes that separate the second DC electrode connected to the drain terminal are formed by a powerful configuration.
  • the transmitted high-frequency signals are removed, and the reflected waves of the high-frequency signals are reduced.
  • the reflection pressing portion suppresses the reflected wave due to the high-frequency signal flowing into the DC cutting line, so that the parasitic oscillation due to the reflected wave is suppressed.
  • the reflection pressing portion suppresses the reflected wave due to the high-frequency signal flowing into the DC cutting line, so that the parasitic oscillation due to the reflected wave is suppressed.
  • the curvature of the reflection suppression unit that can suppress the generation of the reflected wave at the opening of the DC cut line, the band of the ⁇ signal that has been subjected to the reflection suppression can be reduced. It can be adjusted!
  • the reflection suppression processing is performed a plurality of times on the signal of the specific frequency, it is possible to further suppress the generation of the unnecessary reflection wave due to the signal of the specific frequency.
  • the radio wave of the signal radiated from the opening of the reflection suppressing section is absorbed by the radio wave absorber, the generation itself of the reflected wave can be suppressed.
  • a plurality of necessary high-frequency signals can be prevented from leaking to the DC cut line, so that the band of the high-frequency signal whose loss is desired to be reduced can be widened.
  • the first and second DC cut lines for separating the first DC electrode connected to the gate terminal of the transistor and the second DC electrode for separating the second DC electrode connected to the drain terminal are separated.
  • the reflected wave of the high-frequency signal excluding the transmitted high-frequency signal can be suppressed, so that parasitic oscillation due to the reflected wave can be prevented.
  • a high-frequency active device having excellent operation characteristics can be provided.
  • FIG. 1 is a perspective view showing a substrate and a transistor constituting a high-frequency active device according to a first embodiment of the present invention.
  • FIG. 2 is a schematic plan view showing a high-frequency active device according to a first embodiment of the present invention.
  • FIG. 3 is a schematic plan view showing terminals of a transistor.
  • FIG. 4 is a sectional view taken along the line AA of FIG. 2.
  • FIG. 5 is a partially enlarged plan view showing a connection state of a transistor.
  • FIG. 6 is a partially enlarged plan view showing a reflection suppressing unit.
  • FIG. 7 is a schematic diagram of a reflection suppression unit for explaining reflection suppression of a high-frequency signal.
  • FIG. 8 is a schematic diagram of a reflection suppressor for explaining reflection suppression of a broadband high-frequency signal.
  • FIG. 9 is a schematic plan view showing a high-frequency active device according to a second embodiment of the present invention.
  • FIG. 10 is a schematic plan view showing various modifications of the reflection suppressing section.
  • FIG. 11 is a schematic sectional view showing a conventional high-frequency active device.
  • FIG. 1 is a perspective view showing a substrate and a transistor constituting a high-frequency active device according to a first embodiment of the present invention
  • FIG. 2 shows a high-frequency active device according to the first embodiment
  • FIG. 3 is a schematic plan view showing a terminal of the transistor
  • FIG. 4 is a cross-sectional view taken along a line AA in FIG. 2
  • FIG. 5 is a partially enlarged view showing a connection state of the transistor.
  • FIG. 6 is a plan view, and FIG. 6 is a partially enlarged plan view showing a reflection suppressing unit.
  • the high-frequency active device of this embodiment is a high-frequency amplifier, and includes a substrate 1 and a chip-shaped transistor 2.
  • the substrate 1 is composed of a dielectric plate la and conductors lb provided on both sides of the dielectric plate la. A predetermined portion of the conductor lb is deleted to form a plurality of slot lines. These slot lines constitute an input-side line section 3 and an output-side line section 4.
  • the input-side line section 3 has an input slot line 30, and a first DC cut line 31 and a second DC cut line 32 that are parallel to each other. And these lines 30-32 separate and form the first DC electrode 10.
  • the input slot line 30 is a line for inputting and transmitting a high-frequency signal of a desired frequency, and extends from an open end 30 a as a signal input end to the center of the substrate 1. And the tip 30b is short-circuited (short-circuited). Further, the input slot line 30 is partially curved to form a pad portion 1 Oa for connecting the transistor 2 to the tip of the DC electrode 10.
  • the DC cut line 31 branches substantially vertically from the input slot line 30 toward the end lc of the substrate 1, and has a short stub 33 having a short end and a reflection suppressing unit 35 in the middle thereof. I have.
  • the short stub 33 is formed at a position ⁇ ⁇ 4 (where ⁇ is the wavelength of the high-frequency signal) from a branch point S1 with the input slot line 30, and has a length of ⁇ ⁇ 4. Is set.
  • the reflection suppressing section 35 is opened at the edge lc of the substrate 1 with a slot width D2 larger than the slot width D1 at the position P where the short stub 33 is formed.
  • the reflection suppressing unit 35 is a tapered slot line having a length L. Then, the slot width Dx of the reflection suppressing unit 35 linearly increases toward the end lc of the substrate 1 at a rate of (D2 ⁇ Dl) ZL.
  • the DC cut line 32 branches off from the input slot line 30 substantially vertically before the DC cut line 31, and is directed toward the end lc of the substrate 1.
  • This DC cut line 32 also has a short stub 34 having a length of ⁇ 4 at a position ⁇ 4 from the branch point S2, and has a reflection suppression unit 36 having the same shape as the reflection suppression unit 35 on the end lc side.
  • the output side line section 4 is formed at a position substantially point-symmetric with the input side line section 3.
  • the output side line section 4 has an output slot line 40, and a third DC cut line 41 and a fourth DC cut line 42 which are parallel to each other. Then, these lines 40 to 42 separate and form the second DC electrode 11.
  • the output slot line 40 is a line for outputting and transmitting the high-frequency signal, and extends from the short end 40a located at the center of the substrate 1 to the open end 40b as a signal output end.
  • This base is also partially curved, and a pad 1 la for connecting the transistor 2 is formed at the tip of the DC electrode 11.
  • the DC cut line 41 branches off from the output slot line 40 and is directed toward the end Id of the substrate 1, and the DC cut line 42 is behind the DC cut line 41 and also has an output slot line 40 force. It branches to the edge Id of the substrate 1. Like the DC cut lines 31 and 32, these DC cut lines 41 and 42 also have short stubs 43 and 44 each having a length of / 4 at each branch point and at a position ⁇ ⁇ 4 from the S3 and S4 forces. On the side of the end Id of the substrate 1, there are provided reflection suppression portions 45, 46 having the same shape as the reflection suppression portions 35, 36.
  • the DC electrode 10 is formed separately on the substrate 1 by the lines 30-32 of the input side line section 3, and the DC electrode 11 is formed separately by the lines 40-42 of the output side line section 4.
  • the ground electrode 12 is formed separately by the input slot line 30 and the DC cut line 31 and the output slot line 40 and the DC cut line 41.
  • the transistor 2 is connected to such DC electrodes 10, 11 and the ground electrode 12.
  • the transistor 2 is an active element that amplifies a high-frequency signal input from the input slot line 30 of the input side line unit 3 and outputs the amplified signal to the output slot line 40 of the output side line unit 4.
  • an FET field effect transistor
  • the transistor 2 has a gate terminal G, a drain terminal D, and a source terminal S arranged in a coplanar shape, as shown in FIGS.
  • the bump 22 of the gate terminal G is provided on the pad 10a of the DC electrode 10
  • the bump 22 of the drain terminal D is provided on the pad 11a of the DC electrode 11, as shown by the broken lines in FIGS.
  • Flip chip mounting is performed with the bumps 22 of both source terminals S positioned on the ground electrode 12, respectively.
  • the arrangement direction of the gate terminal G and the drain terminal D of the transistor 2 is set at right angles to the input slot line 30 and the output slot line 40, and the force is also the gate terminal G and the drain terminal D force.
  • the input slot line 30 and the output slot line 40 are disposed in front of the ends 30b and 40a by a distance of ⁇ 4.
  • the high-frequency active device as described above is further provided with first radio wave absorbers 37 and 47 and second radio wave absorbers 38 and 48. .
  • radio wave absorbers 37, 38, 47, and 48 serve as long members, and prevent the radio waves from being reflected at the openings of the reflection suppression units 35, 36, 45, and above. That is, the radio wave absorber 37 (47) covers the reflection suppression units 35, 36 (45, 46), and the radio wave absorber 38 (48) covers the reflection suppression units 35, 36 (45, 46). Specifically, as shown in FIG. 4, the radio wave absorber 37 (47) is fixed to the end lc (ld) of the substrate 1, whereby the radio wave absorber 37 (47) Open 35a, 36a (45a, 46a) at 35, 36 (45, 46).
  • the radio wave absorber 38 (48) is mounted and fixed on the substrate 1 so as to pass over the reflection suppressing sections 35, 36 (45, 46), whereby the radio wave absorber 38 (48) Most of the reflection suppression sections 35, 36 (45, 46) are covered from above.
  • the tip 30b of the input slot line 30 is short-circuited, and the gate terminal G and the drain terminal D of the transistor 2 are set at a position ⁇ Z4 from the tip 30b. Therefore, the input slot line 30 is open at this position. Therefore, the high-frequency signal Ml propagates to the gate terminal G and both source terminals S without further propagating in the input slot line 30.
  • the high-frequency signal Ml to which the gate terminal G side force is also input is amplified by the transistor 2, and the amplified high-frequency signal M2 is output from the drain terminal D side.
  • the gate terminal G, the drain terminal D, and both the source terminals S are arranged in a coplanar shape, the gate terminal G and the drain terminal D function as so-called hot, and the high-frequency signal power transistor 2 operates in the coplanar mode ( In the TEM mode), the signal is transmitted to the output slot line 40 side.
  • the high-frequency signal M2 amplified by the transistor 2 reaches the output slot line 40 via the drain terminal D.
  • the output slot line 40 is open at this position when viewed from the opening end 40b side. Therefore, the high-frequency signal M2 does not propagate to the front end 40a, but propagates inside the output slot line 40 toward the open end 40b. Then, the high-frequency signal M2 is directed in the output slot line 40 toward the opening end 40b, and reaches a branch point S4 of the DC cut line 42 (see FIG. 2).
  • the branch point S4 is short-circuited by looking at the output slot line 40 side force, so that the high-frequency signal M2 is prevented from propagating to the DC cut line 42 side.
  • the inside of the output slot line 40 without loss is directed toward the open end 40b.
  • the high-frequency signal Ml (M2) having the wavelength ⁇ as described above flows into the DC cut lines 31, 32 (41, 42) by the function of the short stubs 33, 34 (4 3, 44). Will be blocked.
  • the high-frequency signal M having a wavelength different from that of the high-frequency signal Ml (M2) is not blocked by the short stubs 33, 34 (43, 44) and is applied to the DC cut lines 31, 32 (41, 42). You will be a runaway.
  • the slot width of the DC cut lines 31, 32 (4 1, 42) is small and the force is equal to the opening as in the conventional technique shown in FIG. 11, the impedance at the opening sharply increases. become. For this reason, the electromagnetic wave of the high-frequency signal M is reflected at the opening end, and there is a possibility that a parasitic force is generated on the transistor 2 side and parasitic oscillation occurs.
  • FIG. 7 is a schematic diagram of a reflection suppression unit for explaining reflection suppression of a high-frequency signal.
  • the reflection suppressing unit 35 is configured by four types of spaces bl—b4 having slot widths nl—n4.
  • the impedance is significantly larger than the impedance, and the high-frequency signal M flowing into the reflection suppression unit 35 from the DC cut line 31 is almost reflected at the aperture 35a.
  • the slot width nl of the space bl is shortened. If the position P of the stub 33 is set to be larger than the slot width, the impedance of the space bl increases, and the reflection coefficient at the opening 35a can be reduced. As a result, the reflection of the high-frequency signal M at the aperture 35a is suppressed, and the reflected wave is reduced.
  • the reflection suppressing unit 35 the difference in impedance between the slot width nl of the space bl and the slot width n2 of the space b2, the force difference, and the impedance difference between these spaces is small. Therefore, the reflection of the high-frequency signal M from space b2 to space bl at the boundary indicated by the broken line is very small. Similarly, at the boundary between the spaces b2 and b4, since the reflected wave of the high-frequency signal M is very small, it can be said that the reflected wave generated inside the reflection suppressing unit 35 is also very small. From this point of view, the reflection suppressing unit 35 applied to this embodiment can suppress the reflected wave generated at the location by the opening 35a having the wide slot width D2.
  • the reflection suppressing portion 35 has a tapered shape in which the slot width Dx is linearly increased from the slot width D1 at the position P where the short stub 33 is formed, a thin space having almost no difference in the slot width is formed therein. It can be considered as infinite. As a result, there is no reflected wave generated at the above boundary of the internal space of the reflection suppressing unit 35, and the DC cut line 31 and the reflection suppressing unit 35 are aligned at the position P where the short stub 33 is formed, and the reflection at this connection portion is No waves are generated!
  • FIG. 8 is a schematic diagram of a reflection suppressor for explaining reflection suppression of a broadband high-frequency signal.
  • the side wall of the reflection suppressing unit 35 is simulated stepwise, and four types of lines al-a4 having a length of ml-m4 are formed.
  • the high-frequency signal M that has entered the reflection suppression unit 35 is reflected by the aperture 35a.
  • This reflected wave is trapped on one of the lines al-a4 depending on its wavelength.
  • the line al functions as a cavity resonator, and while the high-frequency signal M flows into the reflection suppression unit 35, the line a Resonance occurs within 1. Therefore, the reflected wave of this wavelength does not return to the transistor 2 side through the formation position P. Therefore, in the schematic diagram of FIG.
  • the reflection suppressor 35 traps high-frequency signals M of four different wavelengths, thereby preventing reflection on the transistor 2 side.
  • the reflection suppressing section 35 of this embodiment has an It is linearly increasing toward the end, and it can be considered that lines having different lengths as described above exist theoretically almost infinitely, so that many types of wavelengths, that is, high frequencies of many types of frequencies are considered. It can prevent the reflection of signal M to transistor 2 side.
  • the opening 35 a of the reflection suppression unit 35 is closed by the radio wave absorber 37, most of the high frequency signal M flowing into the DC cut line 31 is absorbed by the radio wave absorber 37. , The reflected wave itself decreases.
  • the joint area with the radio wave absorber 37 having a wide slot width at the opening 35a of the reflection suppressing section 35 is large, the radio wave absorbing ability of the radio wave absorber 37 can be sufficiently brought out.
  • the high frequency signal M going upward of the reflection suppressing unit 35 is also absorbed by the radio wave absorber 38, and the reflected wave is further reduced. Can be achieved.
  • the reflection suppression units 36, 45, 46 and the radio wave absorbers 38, 47, 48 also perform the same antireflection action on the high-frequency signal M flowing into the DC cut lines 32, 41, 42.
  • the reflection of the high-frequency signal M flowing into the DC cut lines 31, 32, 41, and 42 to the transistor 2 side is transmitted to the reflection suppression units 35, 36, 45, 46 and the radio wave.
  • Absorbers 37, 38, 47, and 48 can efficiently prevent the occurrence of parasitic oscillation, and provide a high-frequency active device with high operation reliability.
  • FIG. 9 is a schematic plan view showing a high-frequency active device according to a second embodiment of the present invention.
  • the high-frequency active device of this embodiment is different from the first embodiment in the number of short stubs. That is, as shown in FIG. 9, as shown in FIG. 9, the short cut stub 33 (34, 34) of the DC cut line 31 (32, 41, 42) The short stub 33 '(34 z, 43,, 44,) of ⁇ U was added to the calo between 43, 44) and the reflection suppression ⁇ 35 (36, 45, 46).
  • the short stub 33 '(34', 43 ', 44') transmits a high-frequency signal having a wavelength ⁇ 1 different from the wavelength of the high-frequency signal targeted by the short stub 33 (34, 43, 44). It is a stub for stopping and its length is set to 1Z4 of ⁇ 1. This prevents the high-frequency signal of wavelength ⁇ 1 that leaks only from the high-frequency signal of wavelength ⁇ from leaking to the DC cut line 31 (32, 41, 42), and prevents loss of high-frequency signals in two bands. be able to.
  • the tapered reflection suppressing unit 35 (36, 45, 46) whose slot width linearly increases toward the end lc (Id) of the substrate 1 is applied.
  • the tapered reflection suppressing unit 35 (36, 45, 46) whose slot width linearly increases toward the end lc (Id) of the substrate 1 is applied.
  • it is not limited to this.
  • the reflection suppressing portion may be formed by a tapered slot line 39-1 which is curved toward the end lc (ld) of the substrate 1.
  • the impedance of the reflection suppressing unit 39-1 changes in accordance with the degree of curvature, so that by adjusting the degree of curvature, the band of the signal whose reflection is to be suppressed can be adjusted.
  • the reflection suppressing portion may be formed by a tapered slot line 39-2 which gradually increases the slot width toward the edge lc (ld) of the substrate 1.
  • the slot line 39-2 is increased in four stages, so that reflection of high-frequency signals in four different bands can be suppressed.
  • the reflection suppression unit is a rectangular slot 39-3 having a constant slot width opened at the end lc (Id) of the substrate 1 to reflect a high-frequency signal of a specific wavelength. You can also try to suppress them. That is, by using the reflection suppressing unit 39-3, it is possible to suppress reflection by targeting only a signal of a specific frequency for which reflection is not desired.
  • a rectangular slot 39-4 having the same shape as the rectangular open slot 39-3 'is connected in a skewered manner through a small slot width slot line 31'. It can also be a reflection suppression unit.
  • a two-stage reflection suppression process is performed on a high-frequency signal of a specific wavelength, so that the reflection suppression effect can be further enhanced, and the generation of unnecessary reflected waves due to the signal of the specific frequency is further suppressed. be able to.
  • the input slot line 30 and the output slot line 30 are used.
  • An example is shown in which a reflection suppression unit is provided for each of the two DC cut lines provided in the lot line 40, but the input slot line or output slot is not limited to such DC cut lines. If at least one of the lines cuts off at least one of the DC cut lines having at least one DC cut line that opens at the end of the substrate and has a short stub of a predetermined length in the middle of the line, the reflection suppression unit can be used for any DC cut line. Can be provided. Therefore, it is a matter of course that the DC suppression lines 111 and 112 according to the conventional example shown in FIG.
  • a high-frequency active device lacking any or all of these electromagnetic wave absorbers 37, 38, 47, 48 is constituted by a force having a configuration provided with the electromagnetic wave absorbers 37, 38, 47, 48. It does not mean to exclude from,.
  • the DC cut line 31 (32, 41, 42) is provided with two short stubs 33, 33, (34, 34,, 43, 43,, 44, 44,).

Landscapes

  • Microwave Amplifiers (AREA)
  • Waveguide Connection Structure (AREA)

Abstract

Il est fourni un dispositif actif haute fréquence dans lequel les caractéristiques de fonctionnement sont améliorées en supprimant l’oscillation parasite en raison d’une onde réfléchie sur une ligne de coupe CC. Sont fournies respectivement une ligne à fente d’entrée (30) et une ligne à fente de sortie (40), avec des lignes de coupe CC (31, 32) et (41, 42). Il se forme une courte lame 33 (34, 43, 44) pour bloquer la fuite de transmission du signal haute fréquence dans chaque ligne de coupe CC 31 (32, 41, 42). Après l’étage de la courte lame 33 (34, 43, 44), il se forme une partie de suppression de la réflexion 35 (36, 45, 46) ouvrant sur l’extrémité 1c (1d) d’un substrat (1). La partie de suppression de la réflexion 35 (36, 45, 46) est fermée par un absorbeur d’ondes radio (37 (47) et est couverte du dessus par un absorbeur d’ondes radio 38 (48). De préférence, la partie de suppression de la réflexion 35 (36, 45, 46) est effilée ou rectangulaire.
PCT/JP2005/002121 2004-04-12 2005-02-14 Dispositif actif haute fréquence WO2005101651A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006512272A JP4211061B2 (ja) 2004-04-12 2005-02-14 高周波能動装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004117122 2004-04-12
JP2004-117122 2004-04-12

Publications (1)

Publication Number Publication Date
WO2005101651A1 true WO2005101651A1 (fr) 2005-10-27

Family

ID=35150306

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/002121 WO2005101651A1 (fr) 2004-04-12 2005-02-14 Dispositif actif haute fréquence

Country Status (2)

Country Link
JP (1) JP4211061B2 (fr)
WO (1) WO2005101651A1 (fr)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127282A (en) * 1978-03-27 1979-10-03 Nippon Telegr & Teleph Corp <Ntt> Power composition unit of transistor
JPS5955606A (ja) * 1982-09-24 1984-03-30 Mitsubishi Electric Corp フインライン平衡ミキサ
JPS60101814U (ja) * 1983-12-15 1985-07-11 三洋電機株式会社 マイクロ波増幅回路
JPS62188802U (fr) * 1986-05-22 1987-12-01
JPS63164276A (ja) * 1986-12-25 1988-07-07 A T R Koudenpa Tsushin Kenkyusho:Kk 半導体装置
JPH0195602A (ja) * 1987-10-08 1989-04-13 Nec Corp チップ化モジュール
JPH0585101U (ja) * 1992-04-22 1993-11-16 三菱電機株式会社 マイクロ波半導体装置用バイアス回路
JPH09172335A (ja) * 1995-12-20 1997-06-30 Fujitsu Ltd 高周波回路
JPH1041714A (ja) * 1996-07-26 1998-02-13 Murata Mfg Co Ltd 誘電体線路
JP2000196344A (ja) * 1998-12-25 2000-07-14 Toshiba Corp アンテナ装置
JP2002280847A (ja) * 2001-03-15 2002-09-27 Murata Mfg Co Ltd 高周波増幅器、高周波モジュール、および通信装置
JP2003152476A (ja) * 2001-11-16 2003-05-23 Fujitsu Ltd 分布増幅器

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127282A (en) * 1978-03-27 1979-10-03 Nippon Telegr & Teleph Corp <Ntt> Power composition unit of transistor
JPS5955606A (ja) * 1982-09-24 1984-03-30 Mitsubishi Electric Corp フインライン平衡ミキサ
JPS60101814U (ja) * 1983-12-15 1985-07-11 三洋電機株式会社 マイクロ波増幅回路
JPS62188802U (fr) * 1986-05-22 1987-12-01
JPS63164276A (ja) * 1986-12-25 1988-07-07 A T R Koudenpa Tsushin Kenkyusho:Kk 半導体装置
JPH0195602A (ja) * 1987-10-08 1989-04-13 Nec Corp チップ化モジュール
JPH0585101U (ja) * 1992-04-22 1993-11-16 三菱電機株式会社 マイクロ波半導体装置用バイアス回路
JPH09172335A (ja) * 1995-12-20 1997-06-30 Fujitsu Ltd 高周波回路
JPH1041714A (ja) * 1996-07-26 1998-02-13 Murata Mfg Co Ltd 誘電体線路
JP2000196344A (ja) * 1998-12-25 2000-07-14 Toshiba Corp アンテナ装置
JP2002280847A (ja) * 2001-03-15 2002-09-27 Murata Mfg Co Ltd 高周波増幅器、高周波モジュール、および通信装置
JP2003152476A (ja) * 2001-11-16 2003-05-23 Fujitsu Ltd 分布増幅器

Also Published As

Publication number Publication date
JPWO2005101651A1 (ja) 2008-03-06
JP4211061B2 (ja) 2009-01-21

Similar Documents

Publication Publication Date Title
JP2011066822A (ja) フィルタ及び増幅回路
US7463110B2 (en) Transition device between a waveguide and two redundant circuits coupled each to a coplanar line
JP2007336048A (ja) 高周波用電力増幅器
JP4624401B2 (ja) 高周波回路および受信装置
JPS6127925B2 (fr)
JP4472652B2 (ja) 高周波抑圧回路
JP3067675B2 (ja) 平面誘電体集積回路
KR980012701A (ko) 유전체 선로
JP2000357903A (ja) 平面型フィルタ
JPH06303010A (ja) 高周波伝送線路及び該高周波伝送線路を用いた集積回路装置並びに高周波平面回路の接続方法
WO2005101651A1 (fr) Dispositif actif haute fréquence
JP3119191B2 (ja) 平面誘電体集積回路
JP2008079085A (ja) 伝送線路導波管変換器
JP5478102B2 (ja) 高周波遮断回路
US20090102578A1 (en) Broadband planar magic-t with low phase and amplitude imbalance
JPH07226609A (ja) 方向性結合器
JPH03209905A (ja) 増幅器とそれを用いた衛星通信用屋外装置
JP2002135014A (ja) 分岐回路、高域通過フィルタおよび分波器
JP4643845B2 (ja) フィルタ回路
JP2008236174A (ja) Ｄｃカット回路
JPH1022302A (ja) 高周波半導体デバイス
WO2024057539A1 (fr) Coupleur de type à couplage par fente
JP3823889B2 (ja) 高周波能動装置および送受信装置
JPS63283202A (ja) マイクロ波線路装置
JP4542531B2 (ja) 伝送モードの変換構造

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2006512272

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase