WO2005098927A1 - Tftシートおよびその製造方法 - Google Patents
Tftシートおよびその製造方法 Download PDFInfo
- Publication number
- WO2005098927A1 WO2005098927A1 PCT/JP2005/004679 JP2005004679W WO2005098927A1 WO 2005098927 A1 WO2005098927 A1 WO 2005098927A1 JP 2005004679 W JP2005004679 W JP 2005004679W WO 2005098927 A1 WO2005098927 A1 WO 2005098927A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- forming
- tft
- rotating
- sheet
- support member
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000010408 film Substances 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 26
- 238000001035 drying Methods 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 229920005989 resin Polymers 0.000 abstract description 41
- 239000011347 resin Substances 0.000 abstract description 41
- 239000010410 layer Substances 0.000 description 111
- 239000000463 material Substances 0.000 description 42
- 239000007772 electrode material Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 21
- 239000010419 fine particle Substances 0.000 description 20
- 238000001514 detection method Methods 0.000 description 18
- -1 poly (3-substituted pyrrole Chemical class 0.000 description 18
- 239000006185 dispersion Substances 0.000 description 17
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 15
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 15
- 239000007789 gas Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000005871 repellent Substances 0.000 description 11
- 229920001940 conductive polymer Polymers 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 10
- 238000000059 patterning Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005299 abrasion Methods 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000002940 repellent Effects 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052809 inorganic oxide Inorganic materials 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 230000001846 repelling effect Effects 0.000 description 7
- 229920002379 silicone rubber Polymers 0.000 description 7
- 239000004945 silicone rubber Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000000975 dye Substances 0.000 description 6
- 229920001477 hydrophilic polymer Polymers 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 108010010803 Gelatin Proteins 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 238000007743 anodising Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000007607 die coating method Methods 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000008273 gelatin Substances 0.000 description 4
- 229920000159 gelatin Polymers 0.000 description 4
- 235000019322 gelatine Nutrition 0.000 description 4
- 235000011852 gelatine desserts Nutrition 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920001197 polyacetylene Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 150000005215 alkyl ethers Chemical class 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 230000009969 flowable effect Effects 0.000 description 3
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000004898 kneading Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000128 polypyrrole Polymers 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- RJCHVBHJXJDUNL-UHFFFAOYSA-N 5,8-dicarbamoylnaphthalene-1,4-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=N)O)=CC=C(C(O)=N)C2=C1C(O)=O RJCHVBHJXJDUNL-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229920008347 Cellulose acetate propionate Polymers 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004373 Pullulan Substances 0.000 description 2
- 229920001218 Pullulan Polymers 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910002115 bismuth titanate Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000366 colloid method Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920001088 polycarbazole Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000015 polydiacetylene Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920000414 polyfuran Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 235000019423 pullulan Nutrition 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- NLELYIIJDKQXTL-UHFFFAOYSA-N (2,3-diethoxyphenyl)-phenylmethanone Chemical compound CCOC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1OCC NLELYIIJDKQXTL-UHFFFAOYSA-N 0.000 description 1
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 150000004057 1,4-benzoquinones Chemical class 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- 125000001318 4-trifluoromethylbenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])*)C(F)(F)F 0.000 description 1
- DWLWGAWWEOVHEU-UHFFFAOYSA-N 5,8-bis(octylcarbamoyl)naphthalene-1,4-dicarboxylic acid Chemical class C1=CC(C(O)=O)=C2C(C(O)=NCCCCCCCC)=CC=C(C(O)=NCCCCCCCC)C2=C1C(O)=O DWLWGAWWEOVHEU-UHFFFAOYSA-N 0.000 description 1
- MSZMWDBZELLPEM-UHFFFAOYSA-N 6,7-dicarbamoylanthracene-2,3-dicarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=N)O)=C3)C(O)=N)C3=CC2=C1 MSZMWDBZELLPEM-UHFFFAOYSA-N 0.000 description 1
- SXSMKKHDMTYQSU-UHFFFAOYSA-N 6,7-dicarbamoylnaphthalene-2,3-dicarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=N)C(C(=N)O)=CC2=C1 SXSMKKHDMTYQSU-UHFFFAOYSA-N 0.000 description 1
- 229920003026 Acene Polymers 0.000 description 1
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- GAXKDCZTJLZOGM-WJXKTOMQSA-N C(C)(=O)O.C(\C=C\C=C\C)(=O)OCC Chemical compound C(C)(=O)O.C(\C=C\C=C\C)(=O)OCC GAXKDCZTJLZOGM-WJXKTOMQSA-N 0.000 description 1
- MKYNTMZXWMDMPY-UHFFFAOYSA-N C1=CC=CC2=CC3=C(C(O)=N)C(C(=N)O)=C(C(O)=O)C(C(O)=O)=C3C=C21 Chemical class C1=CC=CC2=CC3=C(C(O)=N)C(C(=N)O)=C(C(O)=O)C(C(O)=O)=C3C=C21 MKYNTMZXWMDMPY-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920002307 Dextran Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229920004933 Terylene® Polymers 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- YVRQEGLKRIHRCH-UHFFFAOYSA-N [1,4]benzothiazino[2,3-b]phenothiazine Chemical compound S1C2=CC=CC=C2N=C2C1=CC1=NC3=CC=CC=C3SC1=C2 YVRQEGLKRIHRCH-UHFFFAOYSA-N 0.000 description 1
- WWPPGEJAMWSVJJ-UHFFFAOYSA-N [Na].[K].[K] Chemical compound [Na].[K].[K] WWPPGEJAMWSVJJ-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- CSLZEOQUCAWYDO-UHFFFAOYSA-N [O-2].[Ti+4].[Ta+5] Chemical compound [O-2].[Ti+4].[Ta+5] CSLZEOQUCAWYDO-UHFFFAOYSA-N 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QQHJESKHUUVSIC-UHFFFAOYSA-N antimony lead Chemical compound [Sb].[Pb] QQHJESKHUUVSIC-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- HKQOBOMRSSHSTC-UHFFFAOYSA-N cellulose acetate Chemical compound OC1C(O)C(O)C(CO)OC1OC1C(CO)OC(O)C(O)C1O.CC(=O)OCC1OC(OC(C)=O)C(OC(C)=O)C(OC(C)=O)C1OC1C(OC(C)=O)C(OC(C)=O)C(OC(C)=O)C(COC(C)=O)O1.CCC(=O)OCC1OC(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C1OC1C(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C(COC(=O)CC)O1 HKQOBOMRSSHSTC-UHFFFAOYSA-N 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical group [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 229940061607 dibasic sodium phosphate Drugs 0.000 description 1
- FMULMJRDHBIBNO-UHFFFAOYSA-N dibenzo[a,c]pentacene Chemical compound C1=CC=C2C3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C3=CC=CC=C3C2=C1 FMULMJRDHBIBNO-UHFFFAOYSA-N 0.000 description 1
- JNTHRSHGARDABO-UHFFFAOYSA-N dibenzo[a,l]pyrene Chemical compound C1=CC=CC2=C3C4=CC=CC=C4C=C(C=C4)C3=C3C4=CC=CC3=C21 JNTHRSHGARDABO-UHFFFAOYSA-N 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- PPSZHCXTGRHULJ-UHFFFAOYSA-N dioxazine Chemical compound O1ON=CC=C1 PPSZHCXTGRHULJ-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- QPMJENKZJUFOON-PLNGDYQASA-N ethyl (z)-3-chloro-2-cyano-4,4,4-trifluorobut-2-enoate Chemical compound CCOC(=O)C(\C#N)=C(/Cl)C(F)(F)F QPMJENKZJUFOON-PLNGDYQASA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000004886 head movement Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- KDEZIUOWTXJEJK-UHFFFAOYSA-N heptacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC7=CC=CC=C7C=C6C=C5C=C4C=C3C=C21 KDEZIUOWTXJEJK-UHFFFAOYSA-N 0.000 description 1
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- FZWBNHMXJMCXLU-BLAUPYHCSA-N isomaltotriose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@@H](OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O)O1 FZWBNHMXJMCXLU-BLAUPYHCSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- COQAIRYMVBNUKQ-UHFFFAOYSA-J magnesium;barium(2+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Mg+2].[Ba+2] COQAIRYMVBNUKQ-UHFFFAOYSA-J 0.000 description 1
- ZADYMNAVLSWLEQ-UHFFFAOYSA-N magnesium;oxygen(2-);silicon(4+) Chemical compound [O-2].[O-2].[O-2].[Mg+2].[Si+4] ZADYMNAVLSWLEQ-UHFFFAOYSA-N 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- LSQODMMMSXHVCN-UHFFFAOYSA-N ovalene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3C5=C6C(C=C3)=CC=C3C6=C6C(C=C3)=C3)C4=C5C6=C2C3=C1 LSQODMMMSXHVCN-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- BAQNULZQXCKSQW-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Ti+4] BAQNULZQXCKSQW-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- DGTNSSLYPYDJGL-UHFFFAOYSA-N phenyl isocyanate Chemical compound O=C=NC1=CC=CC=C1 DGTNSSLYPYDJGL-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910002029 synthetic silica gel Inorganic materials 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- RIQXSPGGOGYAPV-UHFFFAOYSA-N tetrabenzo(a,c,l,o)pentacene Chemical compound C1=CC=CC2=C(C=C3C(C=C4C=C5C6=CC=CC=C6C=6C(C5=CC4=C3)=CC=CC=6)=C3)C3=C(C=CC=C3)C3=C21 RIQXSPGGOGYAPV-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 229940001496 tribasic sodium phosphate Drugs 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
Definitions
- the present invention relates to a method for manufacturing a TFT sheet and a TFT sheet manufactured by the method.
- a display medium is formed using elements utilizing liquid crystal, organic EL, electrophoresis, or the like. Also, in such display media, in order to ensure the uniformity of screen brightness and the screen rewriting speed, the technology that uses an active drive element composed of a thin film transistor (TFT) as the image drive element has become mainstream!
- TFT thin film transistor
- the TFT element is usually formed on a glass substrate mainly by a semiconductor thin film such as a-Si (amorphous silicon) or p-Si (polysilicon) or a metal thin film such as a source, a drain, and a gate electrode.
- a semiconductor thin film such as a-Si (amorphous silicon) or p-Si (polysilicon) or a metal thin film such as a source, a drain, and a gate electrode.
- a semiconductor thin film such as a-Si (amorphous silicon) or p-Si (polysilicon) or a metal thin film such as a source, a drain, and a gate electrode.
- a semiconductor thin film such as a-Si (amorphous silicon) or p-Si (polysilicon)
- a metal thin film such as a source, a drain, and a gate electrode.
- the manufacture of flat panel displays using TFTs usually requires high-precision photolithographic processes in addition
- Patent Documents 2 and 3 propose a method of manufacturing an organic TFT element using an inkjet.
- Patent Document 1 JP-A-10-190001
- Patent Document 2 U.S. Pat.No. 6,087,196
- Patent Document 3 International Publication No. 01Z46987 pamphlet
- Non-Patent Document 1 Advanced Material Magazine 2002 No. 2, p. 99 (review)
- Non-Patent Document 2 SID '02 Digest p57
- the present invention has been made in view of the above circumstances, and an object of the present invention is to propose a manufacturing method for efficiently and accurately forming all elements constituting a TFT on a resin film. I do.
- a method for manufacturing a TFT sheet comprising, after manufacturing a sheet, performing two or more steps of forming an element while rotating the rotary support member after fixing the support sheet on the rotary support member.
- the TFT sheet according to (1), wherein the two or more steps performed while rotating the rotation supporting member include any of a source electrode forming step, a drain electrode forming step, and a source bus line forming step.
- Production method (3) The method for producing a TFT sheet according to the above (1) or (2), which includes a process-force inkjet method or a laser irradiation method in which an element is formed while rotating the rotation support member.
- FIG. 1 is a diagram showing an example of an arrangement of an additional capacitor type organic TFT sheet.
- FIG. 2 is an example of a sheet on which a storage capacitor type organic TFT is arranged.
- FIG. 3 is a schematic equivalent circuit diagram of an example of a sheet on which a plurality of TFT elements are arranged.
- FIG. 4 is a model diagram showing a mechanism for detecting the position of a previously formed element. is there.
- FIG. 5 is a diagram schematically showing detection of a gate bus line when a source bus line and a pixel electrode are formed by laser irradiation.
- FIG. 6 is a view showing an example of a head configuration of an additional element forming means.
- FIG. 7 is a diagram schematically illustrating an example of an apparatus configuration according to a method for manufacturing a TFT sheet of the present invention when detecting the position of an element.
- FIG. 8 is a diagram showing a flow of outputting position and shape information in synchronization with detection of a bus line, and further outputting the image data to a driver of an ink jet printer or a laser exposure apparatus as image data on-time.
- FIG. 9 is a diagram illustrating an example of production of a support sheet fixed on a rotation support member according to the production method of the present invention.
- FIG. 10 is a diagram illustrating an example of production of a support sheet fixed on a rotation support member according to the production method of the present invention.
- FIG. 11 is a diagram schematically showing a configuration of an apparatus used in Example 1.
- FIG. 12 is a view showing an electrode pattern of a TFT sheet manufactured in Example 1.
- FIG. 13 is a diagram schematically showing a configuration of an apparatus used in Example 2.
- FIG. 14 is a view for explaining a TFT element forming process in Example 3.
- FIG. 15 is a diagram schematically showing another device configuration according to the present invention.
- the method of manufacturing a TFT sheet according to the present invention includes a step of fixing a support sheet on a rotary support member such as a rotary drum or an endless belt, and then forming an element of a TFT element while rotating the rotary support member. It is characterized by performing two or more (multiple).
- the TFT sheet according to the present invention includes a plurality of thin film transistors having, as elements, a gate electrode, a gate insulating layer, and a source electrode and a drain electrode connected by a channel including a semiconductor layer on a support sheet.
- the elements are formed by being connected via a gate bus line and a source nos line.
- the thin film transistor element has a source electrode and a drain electrode in contact with the semiconductor layer on a support, and a top-gate type in which a gate electrode is provided thereon with a gate insulating layer interposed therebetween. It is roughly classified into a bottom gate type having a gate electrode and having a source electrode and a drain electrode connected by a semiconductor layer via a gate insulating layer.
- FIG. 1 shows an example of an arrangement of a sheet having a bottom-gate type organic TFT element.
- the organic TFT is an addition capacitor type, and has a gate electrode 4 on a support first. It has a source electrode 2 and a drain electrode 3 connected by a channel composed of a semiconductor layer 1 via an insulating layer, and they are connected on a support sheet via a gate bus line 7 and a source bus line 8.
- . 9 is a pixel electrode and 20 is an additional capacitor.
- Fig. 2 shows an example of a sheet on which storage capacitor type organic TFTs are arranged, and 21 is a storage capacitor.
- FIG. 3 is a schematic equivalent circuit diagram of an example of a sheet on which a plurality of TFT elements are arranged.
- the organic TFT sheet 10 has a large number of organic TFTs 11 arranged in a matrix. 7 is a gate bus line of each TFT11, and 8 is a source bus line of each TFT11.
- An output element 12 is connected to a source electrode of each TFT 11, and the output 12 is, for example, a liquid crystal or an electrophoretic element, and constitutes a pixel in a display device.
- the pixel electrode may be used as an input electrode of an optical sensor.
- the liquid crystal is shown as an output element by an equivalent circuit having resistance and capacitor power.
- 13 is a storage capacitor
- 14 is a vertical drive circuit
- 15 is a horizontal drive circuit.
- the TFT element is a bottom gate type, and two or more process forces are performed while rotating the rotation support member.
- the process of forming the source electrode 2, the process of forming the drain electrode 3, and the process of forming the source bus line 8 are performed. It is preferable to include any of them in terms of the effective force of production.
- the manufacturing method of the present invention after a support sheet on which at least one type of element is formed in advance is fixed on a rotating support member, the position of the formed element is detected, and the position information is detected. It is preferable to output information on at least one type of arrangement position and shape of another element additionally formed while rotating the rotation support member based on the above, and to form the other element at the arrangement position.
- Examples of the semiconductor material constituting the channel include known materials such as a-Si, p-Si, and organic semiconductor materials.
- ⁇ -conjugated materials such as polypyrrole, poly ( ⁇ -substituted pyrrole), poly (3-substituted pyrrole), and poly (3,4-disubstituted pyrrole)
- Polypyrroles polythiophenes, poly (3-substituted thiophenes), poly (3,4-disubstituted thiophenes), polythiophenes such as polybenzothiophene, polyisothianaphthenes such as polyisothianaphthene, polychethylenes such as polychenylenevinylene Poly ( ⁇ -phenylenevinylene) s such as direnvinylenes, poly ( ⁇ -phenylenevinylene), polyaniline, poly ( ⁇ -substituted a-phosphorus), poly (3-substituted
- Polyazulenes such as polypyrenes, polypyrenes such as polypyrene, polycarbazoles such as polycarbazole and poly ( ⁇ -substituted carbazole), polyselenophenes such as polyselenophene, polyfurans such as polyfuran and polybenzofuran, poly ( poly ( ⁇ -phenylene) such as ⁇ -phenylene, polyindole such as polyindole, polypyridazine such as polypyridazine, naphthacene, pentacene, hexacene, heptacene, dibenzopentacene, tetrabenzopentacene, pyrene Polyacetylenes such as dibenzopyrene, tarisene, perylene, coronene, terylene, ovalene, quaterylene, and sultan guanthracene; and carbon atoms of polyacenes such as N,
- Oligomers such as bis (3-butoxypropynole) -a-secisethiophene and styrylbenzene derivatives can also be suitably used.
- copper phthalocyanine metal phthalocyanines such as fluorine-substituted copper phthalocyanine described in JP-A-11-251601, naphthalene 1,4,5,8-tetracarboxylic acid diimide, N, N, 1-bis ( N, N, 1bis (1H, 1H-perfluorooctyl), N, N, 1bis (1H) along with 4-trifluoromethylbenzyl) naphthalene 1,4,5,8-tetracarboxylic acid diimide , 1 Naphthalene tetracarboxylic acids such as H-perfluorobutyl) and N, N'-dioctylnaphthalene 1,4,5,8-tetracarboxylic diimide derivatives, naphthalene 2,3,6,7 tetracarboxylic diimide Condensed ring tetracarboxylic diimides such as diimides and anthracene t
- Dyes such as guanine dyes and hemicyanine dyes.
- thiophene, vinylene, divinylenevinylene, phenylenevinylene, ⁇ -phenylene, a substituted product thereof, or two or more of these materials are used as a repeating unit. It is composed of an oligomer having a number of repeating units ⁇ of 10 or a polymer having a number ⁇ of 20 or more of such repeating units, a condensed polycyclic aromatic compound such as pentacene, a fullerene, a condensed ring tetracarboxylic diimide, and a metal phthalocyanine. At least one selected from the group is preferred.
- organic semiconductor materials include tetrathiafulvalene (TTF) -tetracyanoquinodimethane (TCNQ) complex, bisethylenetetrathiafulvalene (BEDTTTF) -perchlorate complex, BEDTTTF-iodine complex, TCNQ-iodine Organic molecular complexes such as complexes can also be used. Further, sigma-conjugated polymers such as polysilane and polygermane, and organic-inorganic hybrid materials described in JP-A-2000-260999 can also be used.
- a material having a functional group such as acrylic acid, acetoamide, dimethylamino group, cyano group, carboxyl group, or nitro group in the organic semiconductor layer, a benzoquinone derivative, or tetrasia
- Electron-accepting materials such as ethylene and tetracyanoquinodimethane and their derivatives, and functional groups such as amino, triphenyl, alkyl, hydroxyl, alkoxy, and phenyl groups
- electron donors such as substituted amines such as phenylenediamine, anthracene, benzanthracene, substituted benzoanthracenes, pyrene, substituted pyrene, kylbazole and derivatives thereof, and tetrathiafuronol and derivatives thereof.
- a material that can serve as a donor May be applied.
- the doping means that an electron donating molecule (acceptor) or an electron donating molecule (donor) is introduced as a dopant into the thin film. Therefore, the doping
- the thin film is a thin film containing the condensed polycyclic aromatic compound and a dopant. Known dopants can be used for the present invention.
- These organic thin films are prepared by vacuum evaporation, molecular beam epitaxy, ion cluster beam, low energy ion beam, ion plating, CVD, sputtering, plasma polymerization, and the like. , Electrolytic polymerization, chemical polymerization, spray coating, spin coating, blade coating, dip coating, casting, roll coating, bar coating, die coating, LB coating, etc. Can be used.
- a spin coating method, a blade coating method, a dip coating method, a roll coating method, a vacuum coating method, a die coating method which can easily and accurately form a thin film using an organic semiconductor solution.
- forming the organic semiconductor layer in the coating step while rotating the rotation supporting member is one of the preferable embodiments.
- the subsequent drying step is also preferably performed while rotating the rotation supporting member.
- the precursor film formed by coating is heat-treated.
- a thin film of a target organic material may be formed. This heat treatment step is also preferably performed while rotating the rotation support member.
- the thickness of the semiconductor layer is not particularly limited, but is generally 1 ⁇ m or less, and particularly preferably 10-300 ⁇ m.
- the material forming the drain electrode 3, the source bus line 8, the source electrode 2, the gate electrode 4, the gate bus line 7, and the pixel electrode 9 is not particularly limited as long as it is a conductive material.
- a known conductive polymer whose conductivity has been improved by doping or the like for example, conductive poly-phosphorus, conductive polypyrrole, conductive polythiophene, a complex of polyethylene dioxythiophene and polystyrene sulfonic acid, and the like are also preferably used. Among them, those having low electric resistance on the contact surface with the semiconductor layer are preferred.
- a method for forming an electrode As a method for forming an electrode, a method for forming an electrode using a known photolithographic method or a lift-off method on a conductive thin film formed using the above materials as a raw material by vapor deposition, sputtering, or the like, aluminum, copper, etc. There is a method of etching using a resist by thermal transfer, ink jet, or the like on the metal foil.
- a conductive polymer solution or dispersion, or a conductive fine particle dispersion may be directly patterned by ink jetting, or may be formed from a coating film by lithography or laser ablation.
- a method of patterning a fluid electrode material such as an ink containing a conductive polymer or conductive fine particles, a conductive paste, or the like by a printing method such as letterpress, intaglio, lithographic, or screen printing can also be used.
- a method for producing such a metal fine particle dispersion liquid a physical production method such as an in-gas evaporation method, a sputtering method and a metal vapor synthesis method, and a metal ion in a liquid phase such as a colloid method and a coprecipitation method are used. And a chemical production method of producing metal fine particles by reduction of the same. Preferred are methods disclosed in JP-A Nos. 11-76800, 11-80647, 11-319538, and JP-A-2000-239853.
- the solvent is dried, and further heat-treated at a temperature of 100 to 300 ° C, preferably 150 to 200 ° C. Are thermally fused to form an electrode.
- a method of infiltrating a flowable electrode material into an insulating layer that receives the material in an electrode or bus line pattern can be used.
- the insulating layer for receiving the fluid electrode material a porous film containing inorganic fine particles and a small amount of a hydrophilic polymer is preferable.
- inorganic fine particles for example, light calcium carbonate, heavy calcium carbonate, magnesium carbonate, kaolin, clay, talc, calcium sulfate, barium sulfate, titanium dioxide, zinc oxide, zinc hydroxide, sulfide Zinc, zinc carbonate, hydrated talcite, aluminum silicate, diatomaceous earth, calcium silicate, magnesium silicate, synthetic amorphous silica, colloidal silica, alumina, colloidal alumina, pseudoboehmite, aluminum hydroxide, lithobon, Examples include zeolite and magnesium hydroxide.
- hydrophilic polymer examples include gelatin (eg, alkali-treated gelatin, acid-treated gelatin, a derivative gelatin in which an amino group is blocked with phenyl isocyanate, phthalic anhydride, and the like), and polybutyl alcohol (average degree of polymerization). 300-4000, saponification degree of 80-99.5% is preferred), polybutylpyrrolidone, polyethylene oxide, hydroxylethyl cellulose, polyacrylamide, agar, pullulan, dextran, acrylic acid, carboxymethyl cellulose, Casein, alginic acid and the like can be mentioned, and two or more kinds can be used in combination.
- gelatin eg, alkali-treated gelatin, acid-treated gelatin, a derivative gelatin in which an amino group is blocked with phenyl isocyanate, phthalic anhydride, and the like
- polybutyl alcohol average degree of polymerization. 300-4000, saponification degree of 80-99.5% is preferred
- the source bus line 8 when the source bus line 8, the source electrode 2, the drain electrode 3, the gate electrode 4, the gate bus line 7, and the pixel electrode are formed as elements, an ink jet method is used. Alternatively, laser irradiation is preferable because the position and shape can be easily controlled.
- FIG. 4 schematically shows a mechanism for detecting the position of a previously formed element.
- the position detection sensor 31 precedes an element forming means 32 such as an ink jet printer or a laser exposing device on the downstream side in the conveying direction (drum rotation direction) y of the support sheet 6, and the rotating drum 30 Moves in the X direction in the figure adjacent to the drum, and detects the position of a preformed element on the support sheet 6 fixed on the drum.
- the elements on the entire surface of the support sheet may be detected or may be partially sampled and detected.
- a plurality of position detection sensors may be provided, or a linear head in which a plurality of detection sensors are arranged may be used. Further, it is preferable to detect the reflection of the electrode or the bus line using an optical sensor in which the light emitting element 310 and the light receiving element 311 are combined as shown in FIG. Alternatively, a detection sensor may be embedded in the rotating drum 30.
- any method for fixing the support sheet can be used, such as suppressing the end of the sheet with a clamp mechanism or bringing the sheet into close contact with a drum.
- the nozzles of the head of the ink jet printer and the beam head of the laser-exposure device are multi-layered as the element forming means 32. Also, by connecting these heads 321 and arranging them in-line as shown in FIG. 6 (a), the patterning time can be reduced and the output position accuracy can be improved. Further, the output resolution can be increased by tilting the head as shown in FIG. 6 (b).
- An abrasion layer is used for forming an electrode by laser irradiation, and the abrasion layer can be composed of an energy light absorber, a binder resin, and various additives added as necessary.
- the energy light absorber various organic and inorganic materials that absorb the energy light to be irradiated can be used.
- an infrared laser is used as a laser light source
- pigments, dyes, metals, metals, and the like that absorb infrared light are used.
- metal oxides, metal nitrides, metal carbides, metal borides, graphite, carbon black, titanium black, ferromagnetic metal powders such as metal magnetic powders mainly composed of Al, Fe, Ni, Co, etc.
- dyes such as carbon black and cyanine, and Fe-based ferromagnetic metal powder are preferable.
- the content of the energy light absorber is about 30 to 95% by mass, preferably 40 to 80% by mass of the components for forming the abrasion layer.
- the binder resin for the abrasion layer can be used without any particular limitation as long as it can sufficiently retain the coloring material fine particles.
- examples thereof include polyurethane resin, polyester resin, and Shiridani vinyl.
- Resin polyvinyl acetal resin, cellulose resin, acrylic resin, phenoxy resin, polycarbonate, polyamide resin, phenol resin, epoxy resin and the like.
- the content of the noinder resin is about 5 to 70% by mass, preferably 20 to 60% by mass, for the component for forming the abrasion layer.
- the abrasion layer refers to a layer that is ablated by irradiation with high-density energy light, and the ablation referred to here means that the abrasion layer completely scatters due to a physical or chemical change, and a part of the layer is destroyed. Scattered or scattered, only near the interface with the adjacent layer Includes the phenomenon that physical or chemical changes occur. A resist image is formed using this ablate, and an electrode is formed.
- the high-density energy light can be used without any particular limitation as long as it is active light that generates ablation.
- flash exposure using a xenon lamp, a halogen lamp, a mercury lamp, or the like may be performed through a photomask, or scanning exposure may be performed by converging laser light or the like.
- the energy density preferably 50- 500MjZcm 2, more preferably 100- 300 mj / cm Ru 2 der.
- a photosensitive layer is formed, an electrode material repelling layer having a property of repelling the electrode material is formed on the photosensitive layer, and the photosensitive layer is exposed to light and exposed to light. It is also preferable to form an electrode pattern by patterning the electrode material repelling layer by forming an image and supplying the electrode material to the patterned electrode material repelling layer. That is, by supplying the flowable electrode material to the region from which the electrode material repellent layer has been removed where the patterning has been performed, the flowable electrode material adheres and the electrode is formed, which becomes the electrode pattern.
- the electrode material repelling layer is a layer that has the property of repelling the electrode material to be an electrode, and is a layer that can be putt für exposing and developing the photosensitive layer.
- Examples of such an electrode material repellent layer include JP-A-9-292703, JP-A-9-319075, JP-A-10-244773, JP-B-54-26923, and JP-B-56-23150.
- the silicone rubber layer can be appropriately selected from those known in the art, such as those described in JP-A-7-164773, and the silicone rubber layer is formed by a condensation reaction described in JP-A-10-244773. Two types, a condensation cross-linking type for curing the layer composition and an addition cross-linking type for curing the silicone rubber layer composition by an addition reaction, are preferably used.
- the silicone rubber layer composition is dissolved in an appropriate solvent and used as a solution.
- the thickness of the electrode material repulsion layer is preferably 0.05 to 10 m, and more preferably 0.1 to 2 m.
- the patterning method of the photosensitive layer and the electrode material repulsion layer may be any method that can pattern the electrode material repulsion layer by exposing and developing the photosensitive layer. I do not care.
- the photosensitive layer for example, a photosensitive layer used in a patterning method used in a waterless flat plate technique can be used. Preferably, it is an abrasion layer.
- FIG. 5 is a model diagram showing detection in the case where the gate bus line 7 is detected, and the source node line and the pixel electrode are formed by laser irradiation while rotating the rotation supporting member.
- a gate bus line 7 formed on a support 6 having an anode has an anodized film 23 and is covered with a gate insulating layer 5, on which an abrasion layer and metal fine particles of an electrode material are dispersed. Is formed, the position of the gate bus line is detected.
- FIG. 7 schematically shows an example of a device configuration according to the method for manufacturing a TFT sheet of the present invention when detecting the position of an element.
- the support sheet on which the gate bus line is formed is conveyed by the rotation of the rotary support member, and the position detection sensor 31 determines the position of the gate bus line gl, g 2.
- the position information is detected and output to the central processing unit (CPU) 101 of the TFT sheet manufacturing process control computer 100.
- the computer 100 has in advance in the ROM 102 a calculation program for outputting the data of the arrangement of the TFT elements corresponding to the production lot and the position and the shape as a memory, and the bus line position information output from the position detection sensor 31.
- the operation program is read out from the ROM 102 based on the data, and the actual array of the elements of the individual TFT elements formed on the TFT sheet is calculated with reference to the arrangement data of the ROM 102, and the data (information) of the position and shape is manufactured. Write it to the RAM 103 in association with the lot.
- the gate bus lines gl and g2- ⁇ gN have some variation in each interval, and the lines have some fluctuation. Even so, since the nosline position is detected and the position and shape data of other elements are created based on the nosline position, all TFT element forces are reliably connected via the gate bus line and the source bus line.
- the CPU 101 When forming an element that outputs position and shape information by an inkjet method or a laser irradiation method, the CPU 101 reads out the position and shape information associated with the production lot from the RAM 103, and outputs an interface (not shown).
- the image data is output as image data to the driver 110 of the inkjet printer 111 or the driver 120 of the laser exposure device 121 via / F), and the element is formed while rotating the rotation support member.
- FIG. 8 shows a flow in this case of outputting position and shape information in synchronization with detection of a bus line, and further outputting the data as image data to a driver of an ink jet printer or a laser exposure apparatus on time.
- the position and shape information is output at the same time as the detection.
- step S101 The conveyance of the sheet on which the bus line is formed by the rotation of the rotary drum 30 is started (step S101), and the clock means of the CPU 101 starts counting (step S102).
- the position detection sensor 31 includes a plurality of optical sensors si, s2-, sn, and transmits a signal to the CPU 101 when each optical sensor detects the bus line bi (step S104).
- the CPU 101 associates the clock count with the signal from the optical sensor and calculates the position and fluctuation of the bus line bi as image data to be plotted on, for example, xy coordinates (step S105).
- the CPU 101 calculates the actual arrangement of the elements of the TFT elements on the bus line bi formed on the TFT sheet while referring to the arrangement data of the ROM 102 (step S106). Then, the image data is output as image data to the driver of the inkjet printer or the laser exposure device (step S107).
- step S109 When the detection of all the bus lines is completed (YES in step S109), the counting of the clock means is terminated (step S110), and the process is terminated.
- the source electrode 2 and the drain electrode 3 by using a photolithographic method.
- the photosensitive layer is formed on the entire surface of the organic semiconductor layer via the protective layer. ⁇ Apply a resin solution to form a photosensitive resin layer.
- the photosensitive resin layer it is preferable to use a laser-sensitive material capable of performing exposure with a power laser capable of using a known positive-type or negative-type material.
- a photosensitive resin material include (1) dye-sensitized photopolymerizable photosensitive materials such as JP-A-11-271969, JP-A-2001-117219, JP-A-11-311859 and JP-A-11-352691.
- dye-sensitized photopolymerizable photosensitive materials such as JP-A-11-271969, JP-A-2001-117219, JP-A-11-311859 and JP-A-11-352691.
- Negatives which are sensitive to infrared lasers as disclosed in JP-A-9-179292, U.S. Pat. No. 5,340,699, JP-A-10-90885, JP-A-2000-321780 and JP-A-2001-154374.
- the source electrode or the drain electrode is thereafter patterned by using a dispersion containing metal fine particles or a conductive polymer as a material for the source electrode and the drain electrode, and then heat-sealed as necessary. Electrodes can be easily manufactured with high accuracy, patterning in various forms becomes easy, and organic TFTs can be easily manufactured.
- Solvents for forming the coating solution of the photosensitive resin include propylene glycol monomethyl enoate, propylene glycol monoethyl enolate, methinolacelo sonolev, methinolace Examples include rosonoleb acetate, ethinolacelo sonoleb, ethyl sorbate acetate, dimethylformamide, dimethylsulfoxide, dioxane, acetone, cyclohexanone, trichloroethylene, and methylethylketone. These solvents are used alone or in combination of two or more.
- a coating method such as a spray coating method, a spin coating method, a blade coating method, a dip coating method, a casting method, a roll coating method, a bar coating method, a die coating method, or the like is used. Is used.
- the light-sensitive resin layer contains a coloring material such as a dye or an ultraviolet absorber from the viewpoint of suppressing light reaching the organic semiconductor layer in order to suppress deterioration of the organic semiconductor layer due to light.
- the light transmittance may be reduced.
- the photosensitive resin layer is subjected to pattern jungle exposure.
- the light source for the Butter-Jung exposure is Ar laser, semiconductor laser, He-Ne laser
- a YAG laser, a carbon dioxide laser, and the like preferably a semiconductor laser having an oscillation wavelength in the infrared.
- the output is suitably 50 mW or more, preferably 100 mW or more.
- an aqueous alkaline developer is suitable.
- the aqueous alkaline developer include sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium metasilicate, potassium metasilicate, dibasic sodium phosphate, and tribasic sodium phosphate.
- alkaline compounds such as pyrrole, piperidine, 1,8-diazabicyclo- [5,4,0] -7-indene, 1,5-diazabicyclo- [4,3,0] -5-nonanecan be mentioned.
- the concentration of the alkaline conjugate in the alkaline developer is usually 110 to 10% by mass, preferably 2 to 5% by mass.
- an organic solvent such as an aionic surfactant, an amphoteric surfactant or an alcohol can be added to the developer.
- Organic solvents include propylene glycol and ethylene Glycol monophenyl ether, benzyl alcohol, n -propyl alcohol and the like are useful.
- the photosensitive resin material is preferably a positive photosensitive resin material. It is preferable to mix a phenolic resin such as novolak resin or polybutylphenol with the composition for forming the photosensitive resin layer.
- Novolak resins include, for example, phenol'formaldehyde resin, cresol'formaldehyde resin, phenol'taresol'formaldehyde copolycondensate resin described in JP-A-55-57841, Examples thereof include ⁇ -substituted phenols and phenols, and copolycondensates of talesol and formaldehyde as described in JP-A-55-127553.
- the photosensitive resin layer is removed after the metal fine particle dispersion or the conductive polymer layer is notched, the photosensitive resin layer of alcohol, ether, ester, ketone, glycol ether or the like may be removed.
- the organic solvent power is appropriately selected and used for removal.
- ether-based or ketone-based solvent it is preferable to use an ether-based or ketone-based solvent in order to further reduce the influence on the conductive polymer layer, that is, to prevent a decrease in conductivity or to improve the residual ratio of the conductive polymer layer.
- ether solvents such as tetrahydrofuran (THF).
- the protective layer a material that does not affect the organic semiconductor layer during or after the production of the organic TFT is used, and a photosensitive composition such as a photosensitive resin layer is formed on the protective layer.
- a material that is not affected by the coating process Known polymers such as acrylic polymer copolymer such as polymethyl methacrylate (PMMA), urethane resin polyester resin and polyolefin resin can be selected in consideration of the effect on the organic semiconductor layer. .
- PMMA polymethyl methacrylate
- urethane resin polyester resin polyolefin resin
- a material which is not affected by the patterning of the photosensitive resin layer is preferable.
- Such a material is preferably a material containing a hydrophilic polymer, and more preferably an aqueous solution or dispersion of a hydrophilic polymer.
- the hydrophilic polymer is a polymer having solubility or dispersibility in water or an acidic aqueous solution, an alkaline aqueous solution, an alcohol aqueous solution, or an aqueous solution of various surfactants.
- polybutyl alcohol, 2-hydroxyethyl methacrylate (HEMA), Atari Homopolymers and copolymers composed of components such as phosphoric acid and acrylamide can be suitably used.
- the organic semiconductor protective layer is preferably formed by applying an aqueous solution or aqueous dispersion of such a hydrophilic polymer.
- materials for the organic semiconductor protective layer materials containing an inorganic oxide or an inorganic nitride are also preferable because they do not affect the organic semiconductor and do not affect other application steps.
- materials for the inorganic oxide and the inorganic nitride a material for a gate insulating layer described later can be preferably used.
- the organic semiconductor protective layer containing an inorganic oxide or an inorganic nitride is preferably formed by an atmospheric pressure plasma method.
- the thickness of the organic semiconductor protective layer is preferably 0.01 ⁇ m to 10 m.
- Such a developing step or a washing step is also preferably a step performed while rotating the rotation supporting member.
- an inorganic oxide film having a high relative dielectric constant is preferable.
- the inorganic oxide include silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate, and titanium.
- Lead lanthanum, strontium titanate, barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth titanate, strontium bismuth tantalate, bismuth tantalate bismuth niobate, yttrium trioxide and the like can be mentioned.
- preferred are silicon oxide, aluminum oxide, titanium oxide tantalum, and titanium titanium oxide.
- Inorganic nitrides such as silicon nitride and aluminum nitride can also be suitably used.
- Examples of the method of forming the film include a vacuum deposition method, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, and an atmospheric pressure plasma method. Dry process, application method such as spray coating method, spin coating method, blade coating method, dip coating method, casting method, roll coating method, bar coating method, die coating method, etc. And a wet process according to the material.
- the wet process is a method of applying and drying a liquid obtained by dispersing fine particles of an inorganic oxide in an optional organic solvent or water using a dispersing agent such as a surfactant as necessary.
- a so-called sol-gel method of applying and drying a solution of an oxide precursor, for example, an alkoxide, is used.
- the atmospheric pressure plasma method is preferable, and it is also preferable in the present invention to perform the atmospheric pressure plasma step while rotating the rotating support member!
- a method for forming an insulating film by plasma film formation under atmospheric pressure is a process in which a discharge is performed under atmospheric pressure or a pressure close to atmospheric pressure, a reactive gas is plasma-excited, and a thin film is formed on a substrate.
- the method is described in the following [Kotatsu-Patama JP-A-11-61406, JP-A-11-133205, JP-A-2000-121804, JP-A-2000-147209, JP-A-2000-185362, etc.] Atmospheric pressure plasma method). Thereby, a highly functional thin film can be formed with high productivity.
- the gate insulating layer is composed of an anodized film or an anodized film and an insulating film. It is desirable that the anodizing film is subjected to a sealing treatment.
- the anodized film is formed by anodizing a metal capable of being anodized by a known method.
- Examples of the metal that can be anodized include aluminum or tantalum, and the method of the anodization may be a known method without any particular limitation.
- An oxide film is formed by performing the anodic oxidation treatment.
- the electrolytic solution used for the anodizing treatment any electrolytic solution can be used as long as it can form a porous oxide film.
- sulfuric acid, phosphoric acid, oxalic acid, chromic acid, boric acid, and the like can be used.
- Sulfamic acid, benzenesulfonic acid, and the like, and a mixed acid obtained by combining two or more thereof, and salts thereof are used.
- Anodizing treatment conditions vary depending on the electrolyte used and cannot be specified unconditionally. However, in general, the concentration of the electrolyte is 1 to 80% by mass, the temperature of the electrolyte is 5 to 70 ° C, and the current A density of 0.5 to 60 AZdm 2 , a voltage of 1 to 100 volts, and an electrolysis time of 10 seconds to 5 minutes is appropriate.
- a preferable anodic oxidation treatment is a method in which an aqueous solution of sulfuric acid, phosphoric acid, or boric acid is used as an electrolytic solution and treatment is performed with a direct current, but an alternating current may be used.
- the concentration of these acids is preferably 5 to 45% by mass, and the electrolytic treatment is preferably performed at an electrolyte temperature of 20 to 50 ° C and a current density of 0.5 to 20 AZdm 2 for 20 to 250 seconds! / ,.
- the organic compound film may be a polyimide, polyamide, polyester, polyatalylate, photo-curable resin of photo-radical polymerization type, photo-thion polymerization type, or acrylonitrile coating.
- a copolymer containing a polybutadiene, polybutylphenol, polybutyl alcohol, novolak resin, cyanoethyl pullulan and the like can also be used.
- the above-mentioned wet process is preferable.
- the inorganic oxide film and the organic acid film can be laminated and used together.
- the thickness of these insulating films is generally 50 nm to 3 ⁇ m, preferably 100 nm to 1 ⁇ m.
- Any orientation treatment may be performed between the gate insulating layer and the semiconductor channel.
- a silane coupling agent such as octadecyltrichlorosilane, trichloromethylsilazane, or a self-assembled alignment film such as alkenic phosphoric acid, alkanesulfonic acid, or alkanecarboxylic acid is preferably used.
- a plastic film sheet which is preferably made of a resin
- the plastic film include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetherimide, polyetheretherketone, polyphenylenesulfide, polyarylate, polyimide, polycarbonate (PC ), Cellulose triacetate (TAC) and cellulose acetate propionate (CAP).
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PES polyethersulfone
- PES polyetherimide
- polyetheretherketone polyphenylenesulfide
- PC polycarbonate
- TAC Cellulose triacetate
- CAP cellulose acetate propionate
- the two or more different steps of forming an element while rotating the rotation supporting member include an ink jet step, a laser irradiation step, a coating step, a drying step, a heating step, and an atmospheric pressure plasma step. Since various processes such as a development process, a cleaning process, and an element position detection process are combined, the time required for each process changes as the rotation support member rotates, and the time required for each process changes. It is preferable to respond while changing the rotation conditions.
- the figure shows a roll of resin film (200 ⁇ m thick) such as polyimide, polyethersulfone (PES), or polyethylene naphthalate (PEN) 60 rolls.
- 4 shows a process for producing a support sheet to be fixed on a member.
- I is a washing step, in which the surface of the film is washed by a known washing method, and the attached particles are removed by, for example, performing an undercoating process by an atmospheric pressure plasma method in advance.
- step II in step II, a dispersion liquid of copper fine particles having an average particle diameter of 20 nm is discharged from a piezo-type inkjet head to form a gate bus line 7 in a line shape as shown in the figure.
- the inkjet head uses a line-shaped multi-nozzle head over the film width, detects the film end face with a sensor, and detects the conveyance deviation in the direction perpendicular to the conveyance direction.
- the head movement was linked so that a line was formed at the position.
- the substrate was dried at 100 ° C. and subjected to a heat treatment at 150 ° C. Step III, and the copper fine particles were thermally fused to form a pattern of the gate bus line 7 having a thickness of 500 nm.
- the capacitor line 24 may be formed at the same time as shown.
- step IV on the surface having the gate bus line 7, Snowtex PSM (manufactured by Nissan Chemical Industries, solid content 20% by mass) was applied, and dried in step V.
- a non-ionic surfactant (polyoxyethylene alkyl ether) was added to an aqueous dispersion (Baytron, Baytron P) of a complex of polystyrenesulfonic acid and poly (ethylenedioxythiophene) (PEDOTZPS S complex). . 05 mass 0/0 were added, were prepared.
- the conductive polymer solution was discharged to the position shown in the figure using a piezo-type inkjet head, impregnated in the receiving layer, and dried in step VII to form the gate electrode 4.
- a force for similarly providing the capacitor electrode 26 on the capacitor line 24 or an electrode for the additional capacitor 20 is provided on the adjacent bus line.
- step VIII
- Step IX after drying at 90 ° C. for 1 minute, curing was performed for 4 seconds by irradiating a distance force of 10 cm using a high-pressure mercury lamp 33 of 60 WZcm.
- step X a 200-nm-thick silicon oxide film was formed as gate insulating layer 5 by an atmospheric pressure plasma method under the following conditions (X-1). At this time, the temperature of the film was 180 ° C.
- Inert gas helium 98.25 volume 0/0
- Reactive gas oxygen gas 1.5% by volume
- Reactive gas Tetraethoxysilane vapor
- the silicon oxide film was subjected to an atmospheric pressure plasma treatment using only trimethoxypropyl silane as a reactive gas, and subjected to a water-repellent treatment (X-2).
- a 50 nm semiconductor layer 1 is formed by applying a solution of a semiconductor material such as a ⁇ -conjugated polymer (Step XI in FIG. 10 (a)).
- a well-purified regioregular form of poly (3-hexylthiophene) (manufactured by Aldrich) was prepared in a closed-mouth form solution, and the dissolved oxygen in the solution was removed by publishing with N gas.
- a photosensitive layer composition consisting of 1 part of a curing agent such as a polyisocyanate compound.
- a photosensitive layer composition was prepared. This was applied (Step ⁇ ) and dried (Step XIV) to form a photosensitive layer 27 having a thickness of 0.3 ⁇ m.
- a composition diluted with Isopar E "(isoparaffin-based hydrocarbon, manufactured by Exxonani Kagaku Co., Ltd.) is coated with a liquid diluted to a solid content of 10.3% by mass (process XV), and dried (process XVI). ), An electrode material repelling layer 28 of a silicone rubber layer having a thickness of 0.4 m was formed.
- the support sheet 60 produced by the above method was cut into an appropriate size (Step XVII).
- Figure 10 (b) shows the cross-sectional configuration of the sheet.
- the cut support sheet 60 is set in an apparatus having a configuration schematically shown in FIG.
- the rotation support member 30 of this embodiment is a cylindrical drum having a diameter of 70 cm and a width of 150 cm, and can rotate at a speed of 0.1 to 100 rpm.
- the reflection type position detection sensor 31 After the gate bus line is set on the drum 30 so as to be in the direction shown in FIG. 12 with respect to the rotation direction of the drum by clamping and depressurizing suction at the sheet end, the reflection type position detection sensor 31 Then, the positions of the gate bus line 7 and the gate electrode 4 are detected, and the laser output position described later is determined so that the electrode pattern as shown in FIG. 12 (see FIGS. 1 and 2) is superimposed.
- a laser beam that can output an oscillation wavelength of 830 nm and a maximum output of 300 mW is linear
- a semiconductor laser head 322 that can output 500 lasers the outer surface of the cylinder is scanned to develop a pattern shown in FIG. 12 after development, so that the electrode material repulsion layer 28 has a pattern shown in FIG. Exposure was performed while rotating the drum at 800 rpm to achieve an energy density of 300 mjZcm 2 in the pattern of line 8.
- the silicone rubber layer in the exposed area was removed by brushing in the developing section 34 of the apparatus while rotating at a speed of 0.5 rpm, and the exposed photosensitive layer was methylated. It was removed by washing with chill ketone (MEK). After further washing with pure water, the drying unit 36 at 90 ° C. was dried while being conveyed at a speed of 0.1 rpm.
- MEK chill ketone
- the PED OTZPSS prepared by adding 0.01% by mass of a non-ionic surfactant (polyoxyethylene alkyl ether) from the coater head 35 was added.
- An aqueous dispersion of the complex (Baytron, Baytron P) was supplied and applied to the entire surface of the support sheet. Since the pattern portion of the electrode material repellent layer 28 repelled this solution, it adhered only to the portion other than the pattern (the region corresponding to the electrode and the source bus line 8) (see FIG. 12).
- the drying unit 36 at 90 ° C was dried while being conveyed at a speed of 0.1 rpm to form electrodes made of a conductive polymer.
- a dispersion liquid of copper fine particles having an average particle diameter of 20 nm is discharged, and the pattern of the source bus line 8 is formed.
- a pattern was formed at 0.5 rpm.
- the drying section 36 in which the radiant heat of the eight portions of the source nos line was set to 160 ° C was reciprocated five times at 0.1 rpm to fuse the bus line pattern.
- Example 13 was carried out in the same manner as in Example 1 except that the pattern of the source noise line was changed as follows, and the apparatus was changed to the apparatus shown in FIG.
- the ink supply mechanism 323 used here the ink is transferred from the ink fountain to the kneading roller via the ink source roller, is thinned at the kneading roller, and the transfer roll force transfers the ink onto the support sheet. Configuration It was.
- a commercially available silver paste was transferred from the ink supply mechanism 323 to the entire surface of the support sheet. Since the pattern portion of the electrode material repellent layer 28 repelled this paste, it was attached only to portions other than the pattern (regions corresponding to the electrodes and the source bus lines 8).
- the drying section 36 in which the radiant heat of the paste portion was set to 160 ° C. was reciprocated five times at 0.1 rpm to fuse the paste pattern.
- FIG. 14 is a view for explaining a TFT element forming process.
- the amount of copper fine particles having an average particle diameter of 20 nm was measured.
- the sprinkled liquid was discharged to form a turn of the source bus line 8. Based on the detected position information, continuous spraying is performed between the repulsive areas 29, a pattern is formed at a drum rotation speed of 0.5 rpm, and the drying section 36 that rotates the radiant heat of the source bus line 8 at 160 ° C. is rotated by the drum.
- the pattern was reciprocated five times at several 0.1 rpm to fuse the bus line pattern (Fig. 14 (c)).
- the MEK solution of polybutylphenol is discharged from the inkjet head 321 onto the source bus line 8 at a drum rotation speed of 0.5 rpm, and is passed through the drying unit 36 at a drum rotation speed of 2 rpm to be dried. , And sealed.
- a semiconductor laser head 322 capable of arranging 500 laser beams capable of outputting an oscillation wavelength of 830 nm and a maximum output of 300 mW in a line, and scanning the outer surface of a cylinder, an energy density of 3 OOmiZcm 2 is obtained.
- the portions other than the gate electrode and gate bus line pattern were exposed while rotating the drum at 800 rpm.
- the photoresist material in the exposed area was removed with an alkali developing solution and washed well with a developing mechanism 34 of the apparatus while rotating the drum at a speed of 0.5 rpm.
- the developing mechanism 34 was changed to an etching mechanism, and while rotating at a speed of 0.5 rpm, the exposed aluminum deposition layer was removed using an etchant, and the remaining photoresist layer was removed using MEK.
- the drying unit 36 at 90 ° C. was dried while being conveyed at a speed of 0.1 rpm.
- a 200-nm-thick silicon oxide film was formed as a gate insulating layer using the atmospheric pressure plasma mechanism 37 of the apparatus.
- the temperature of the surface of the drum 30 was set at 200 ° C., and the atmospheric pressure plasma treatment was performed under the following conditions while reciprocatingly rotating at a speed of 0.1 Irpm.
- Inert gas helium 98.25 volume 0/0
- Reactive gas oxygen gas 1.5% by volume
- Reactive gas Tetraethoxysilane vapor 0.25% by volume
- atmospheric pressure plasma treatment was performed by using only trimethoxypropyl silane as a reactive gas while rotating once at a speed of Irpm, and water-repellent treatment was performed.
- a piezo-type inkjet head 321 arranged in a line across the width of the drum was used to apply a chromate form solution of the following compound to the gate electrode portion.
- a pattern of a semiconductor layer was formed.
- the temperature on the drum was set to 200 ° C, and a heat treatment was performed for 5 minutes to form an organic semiconductor layer, a pentacene thin film having a thickness of 50 nm. Formed.
- a dispersion liquid of gold fine particles having an average particle diameter of 20 nm was ejected using the inkjet head 321 to form a pattern of a source electrode and a drain electrode.
- a dispersion of copper fine particles having an average particle diameter of 20 nm was ejected so as to form a pattern of pixel electrodes and source bus lines.
- the drying unit 36 with radiant heat of 230 ° C. was reciprocated five times at 0.1 lpm to fuse the patterns of each electrode and the source bus line.
- a TFT sheet can be easily and efficiently manufactured, thereby obtaining a TFT sheet with improved positional accuracy and reduced variation in performance between individual TFTs. Further, since a plurality of steps are performed on the rotating support member to which the support sheet is fixed, the positional accuracy between the elements corresponding to each step can be improved without performing positioning for each step.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006511952A JPWO2005098927A1 (ja) | 2004-03-31 | 2005-03-16 | Tftシートおよびその製造方法 |
EP05720930A EP1732115A4 (en) | 2004-03-31 | 2005-03-16 | TFT SHEET AND PRODUCTION METHOD THEREOF |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-103245 | 2004-03-31 | ||
JP2004103245 | 2004-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005098927A1 true WO2005098927A1 (ja) | 2005-10-20 |
Family
ID=35096784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/004679 WO2005098927A1 (ja) | 2004-03-31 | 2005-03-16 | Tftシートおよびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050233491A1 (ja) |
EP (1) | EP1732115A4 (ja) |
JP (1) | JPWO2005098927A1 (ja) |
WO (1) | WO2005098927A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017191802A (ja) * | 2016-04-11 | 2017-10-19 | 株式会社小森コーポレーション | 電子デバイス製造装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007067541A2 (en) * | 2005-12-05 | 2007-06-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing a film, and thin films |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
GB2453766A (en) * | 2007-10-18 | 2009-04-22 | Novalia Ltd | Method of fabricating an electronic device |
TW201001624A (en) | 2008-01-24 | 2010-01-01 | Soligie Inc | Silicon thin film transistors, systems, and methods of making same |
WO2009128833A1 (en) * | 2008-04-18 | 2009-10-22 | Hewlett-Packard Development Company, L.P. | Ink-jet overcoat composition and related systems and methods |
US20160150637A1 (en) * | 2012-11-15 | 2016-05-26 | Amichai Ziv | Device kit and method for absorbing leakage current |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095677A (ja) * | 2002-08-29 | 2004-03-25 | Mitsubishi Heavy Ind Ltd | 基板処理装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4443504A (en) * | 1982-06-09 | 1984-04-17 | E. I. Du Pont De Nemours & Company | Coating method |
JP3223142B2 (ja) * | 1997-08-22 | 2001-10-29 | チッソ株式会社 | 液晶表示素子の製造法 |
JP3919972B2 (ja) * | 1998-07-31 | 2007-05-30 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US6274508B1 (en) * | 1999-02-05 | 2001-08-14 | Alien Technology Corporation | Apparatuses and methods used in forming assemblies |
JP2003177682A (ja) * | 2001-09-05 | 2003-06-27 | Konica Corp | ディスプレイパネルおよびその製造方法 |
EP1291932A3 (en) * | 2001-09-05 | 2006-10-18 | Konica Corporation | Organic thin-film semiconductor element and manufacturing method for the same |
GB2379414A (en) * | 2001-09-10 | 2003-03-12 | Seiko Epson Corp | Method of forming a large flexible electronic display on a substrate using an inkjet head(s) disposed about a vacuum roller holding the substrate |
JP2003234473A (ja) * | 2002-02-06 | 2003-08-22 | Canon Inc | 有機半導体素子の製造方法 |
US6740900B2 (en) * | 2002-02-27 | 2004-05-25 | Konica Corporation | Organic thin-film transistor and manufacturing method for the same |
US6885146B2 (en) * | 2002-03-14 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates |
US20040072385A1 (en) * | 2002-10-15 | 2004-04-15 | Bauer Donald G. | Chip alignment and placement apparatus for integrated circuit, mems, photonic or other devices |
KR20040054441A (ko) * | 2002-12-18 | 2004-06-25 | 한국전자통신연구원 | 반도체 소자의 버퍼 절연막 형성 방법 및 이를 이용한박막 트랜지스터 제조 방법 |
EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
US7037767B2 (en) * | 2003-03-24 | 2006-05-02 | Konica Minolta Holdings, Inc. | Thin-film transistor, thin-film transistor sheet and their manufacturing method |
-
2005
- 2005-03-16 US US11/081,377 patent/US20050233491A1/en not_active Abandoned
- 2005-03-16 EP EP05720930A patent/EP1732115A4/en not_active Withdrawn
- 2005-03-16 JP JP2006511952A patent/JPWO2005098927A1/ja active Pending
- 2005-03-16 WO PCT/JP2005/004679 patent/WO2005098927A1/ja not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095677A (ja) * | 2002-08-29 | 2004-03-25 | Mitsubishi Heavy Ind Ltd | 基板処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017191802A (ja) * | 2016-04-11 | 2017-10-19 | 株式会社小森コーポレーション | 電子デバイス製造装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050233491A1 (en) | 2005-10-20 |
EP1732115A4 (en) | 2009-03-04 |
JPWO2005098927A1 (ja) | 2008-03-06 |
EP1732115A1 (en) | 2006-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6913944B2 (en) | Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet | |
EP1434281A2 (en) | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit | |
WO2005098927A1 (ja) | Tftシートおよびその製造方法 | |
JP2004146430A (ja) | 有機薄膜トランジスタ、有機tft装置およびそれらの製造方法 | |
JP4572501B2 (ja) | 有機薄膜トランジスタの製造方法 | |
JP2004031933A (ja) | 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート | |
JP2008170515A (ja) | 表面処理材料、基板、基板表面の処理方法、薄膜トランジスタ及び半導体デバイスの製造方法 | |
WO2007015364A1 (ja) | 薄膜トランジスタの製造方法 | |
WO2006033282A1 (ja) | 薄膜トランジスタと薄膜トランジスタ素子シート、及び、薄膜トランジスタと薄膜トランジスタ素子シートの作製方法 | |
JP2004221562A (ja) | 有機薄膜トランジスタ素子の製造方法、該製造方法により製造した有機薄膜トランジスタ素子、及び有機薄膜トランジスタ素子シート | |
JP4860101B2 (ja) | 有機薄膜トランジスタ及び有機薄膜トランジスタシートの製造方法 | |
JP4281324B2 (ja) | 有機薄膜トランジスタ素子、その製造方法及び有機薄膜トランジスタシート | |
JP2004165427A (ja) | 有機薄膜トランジスタ素子 | |
JP4396109B2 (ja) | 薄膜トランジスタ素子の製造方法、薄膜トランジスタ素子及び薄膜トランジスタ素子シート | |
JP2005183889A (ja) | 薄膜トランジスタシート及びその作製方法、それにより形成された薄膜トランジスタ素子 | |
WO2008018271A1 (fr) | transistor organique en couche mince et SA méthode de fabrication | |
JP2008147346A (ja) | 有機薄膜トランジスタの製造方法、及び該製造方法により作製した有機薄膜トランジスタ | |
JP4423864B2 (ja) | 薄膜トランジスタ素子及びその製造方法 | |
JP4581423B2 (ja) | 薄膜トランジスタ素子、当該素子シート及びその作製方法 | |
JP4479163B2 (ja) | 薄膜トランジスタ及び薄膜トランジスタの作製方法 | |
JP2004200365A (ja) | 有機薄膜トランジスタ素子 | |
JP2004281477A (ja) | 有機薄膜トランジスタおよびその製造方法 | |
JP4419383B2 (ja) | 薄膜トランジスタ用シートの製造方法 | |
JP2004289044A (ja) | 薄膜トランジスタ素子シート及び薄膜トランジスタ素子シートの作製方法 | |
JP4423870B2 (ja) | 画像駆動素子シート及びその作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2006511952 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005720930 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2005720930 Country of ref document: EP |