WO2005093803A1 - Composition pour polir un semi-conducteur - Google Patents

Composition pour polir un semi-conducteur Download PDF

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Publication number
WO2005093803A1
WO2005093803A1 PCT/JP2005/005767 JP2005005767W WO2005093803A1 WO 2005093803 A1 WO2005093803 A1 WO 2005093803A1 JP 2005005767 W JP2005005767 W JP 2005005767W WO 2005093803 A1 WO2005093803 A1 WO 2005093803A1
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Prior art keywords
fumed silica
polishing
polishing composition
acid
particle size
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PCT/JP2005/005767
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English (en)
Japanese (ja)
Inventor
Yoshiharu Ohta
Yasuyuki Itai
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Nitta Haas Incorporated
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Priority to US10/594,636 priority Critical patent/US20070209288A1/en
Publication of WO2005093803A1 publication Critical patent/WO2005093803A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the present invention relates to a semiconductor polishing composition.
  • the I ⁇ mechanical polishing (CMP, Chemical Mechanical Polishing) is to flatten the semiconductor wafer, in order to achieve high performance and high integration of semiconductor devices, the current in the required essential technique ⁇ 1 It has become.
  • the wafer is placed on the pad attached to the polishing platen so that the polished surface of the wafer is in contact with the pad, and a pressing head is pressed against the wafer to apply a certain load to the wafer and polish it.
  • the wafer is polished by rotating the pad and the pressure head while supplying the composition for use to the pad surface.
  • the polishing composition is an aqueous slurry in which a polishing agent is dispersed, and an appropriate polishing agent is selected from various polishing agents depending on the material of a film formed on the surface to be polished of the wafer.
  • a polishing agent is dispersed
  • an appropriate polishing agent is selected from various polishing agents depending on the material of a film formed on the surface to be polished of the wafer.
  • silica-based abrasives such as colloidal silica and fumed silica are widely used (for example, see JP-A-52-47369).
  • colloidal silica has excellent dispersion stability in water. Therefore, when the concentration of the colloidal silica in the polishing composition, which is an aqueous dispersion of colloidal silica, is within an appropriate range, aggregation of the colloidal silica hardly occurs even after long-term storage.
  • colloidal silica has the advantage of requiring more time to polish wafers with relatively low polishing rates. Therefore, a polishing accelerator such as an organic acid, an oxidizing agent such as hydrogen peroxide, a corrosion inhibitor such as a benzotriazole compound, a surfactant, and the like are used together with colloidal silica.
  • Colloidal silica is industrially manufactured using sodium silicate as a raw material, and as a result, may contain impurities such as sodium and contaminate the wafer during polishing. Therefore, it is necessary to purify and highly purify colloidal silica. As described above, when colloidal silica is manufactured industrially, a purification step for high purification is indispensable, productivity is reduced, and manufacturing cost is reduced. To rise.
  • fumed silica has a higher polishing rate than colloidal silica. Since it is synthesized by combustion of silicon tetrachloride in an oxyhydrogen flame, the amount of impurities is small and it is industrially inexpensive. However, fumed silica has poor dispersibility in water. Therefore, the polishing composition, which is an aqueous dispersion of fumed silica, is subjected to a pipe load (such as a collision with the inner wall of the pipe) during supply to the CMP process, and a load of a supply pump (such as a pressure load by the supply pump).
  • a pipe load such as a collision with the inner wall of the pipe
  • a supply pump such as a pressure load by the supply pump
  • Fumed silica Agglomeration of fumed silica occurs due to external loads such as pressure applied to the pressure head (pressure applied by the pressure head, etc.) and environmental conditions during transportation. Also, fumed silica is likely to aggregate during long-term storage. Fumed silica, which has become large particles due to agglomeration, generates many polishing scratches on the wafer. Such a polishing flaw impairs the reliability of the electrical connection of the wafer. If there are many polishing flaws, particularly if the polishing flaw exceeds 0.2 xm in diameter per wafer, the wafer is damaged. Becomes defective, and the yield in the polishing process decreases.
  • aqueous dispersion containing a high concentration of fumed silica For example, water and fumed silica are mixed while being subjected to high shearing force to obtain an aqueous dispersion containing a high concentration of fumed silica.
  • a polishing composition containing mudosilica for example, see Japanese Patent No. 2935125.
  • an acid and fumed silica are sequentially added and mixed with water while applying a high shearing force, and after further adding water, an alkali aqueous solution is added to obtain a polishing composition containing fumed silica.
  • an alkali aqueous solution is added to obtain a polishing composition containing fumed silica.
  • fumed silica is added to water having a pH of 2 to 4 while applying a high shearing force so that the concentration becomes 40 to 60% by weight, and further water is added. Adjust the viscosity to 2 ⁇ :!
  • An object of the present invention is to provide a semiconductor polishing composition which is an aqueous dispersion of fumed silica and which can efficiently polish a semiconductor device such as a wafer at a high polishing rate without causing polishing scratches. It is to be.
  • the present invention is an aqueous dispersion of fumed silica, wherein the content of fumed silica having a particle size of 100 nm or less is 15% by volume or more of the total amount of fumed silica, and is a composition for polishing a semiconductor. .
  • the semiconductor polishing composition of the present invention is characterized in that the content of fumed silica having a particle size of 100 nm or less is 15 to 90% by volume (15 to 90% by volume) of the total amount of fumed silica. I do.
  • the semiconductor polishing composition of the present invention is characterized in that the maximum frequency particle size is in the range of 115 nm or less in the volume-based particle size distribution of fumed silica. Further, the semiconductor polishing composition of the present invention is characterized in that, in the volume-based particle size distribution of fumed silica, the maximum frequency particle size is in the range of 80 to 115 nm (80 nm or more and 115 nm or less). .
  • the semiconductor polishing composition of the present invention is characterized in that the content of the above-mentioned fumed silica is 10 to 30% by weight (10% to 30% by weight) of the total amount of the composition. Further, the semiconductor polishing composition of the present invention is characterized by being prepared by adding an acidic fumed silica dispersion to an aqueous alkaline solution.
  • the semiconductor polishing composition of the present invention is characterized in that the pH of the above-mentioned aqueous solution is 12 to 14 (12 or more, 14 or less).
  • FIG. 1 is a drawing schematically showing a CMP process.
  • FIG. 2 is a graph showing a volume ratio (%) of particles having a particle diameter and particles having a particle diameter smaller than the particle diameter in all the fumed silica particles in the semiconductor polishing composition.
  • FIG. 3 is a graph showing, as a frequency (%), a volume ratio of particles of each particle diameter to all fumed silica particles in the semiconductor polishing composition of the present invention.
  • FIG. 4 is a graph showing, as a frequency (%), a volume ratio of particles of each particle diameter to all fumed silica particles in a semiconductor polishing composition of a comparative example.
  • the semiconductor polishing composition of the present invention (hereinafter simply referred to as “polishing composition” unless otherwise specified) is an aqueous dispersion of fumed silica having a content of fumed silica having a particle size of 100 nm or less. It is 15% by volume or more, preferably 15 to 90% by volume of the total amount of fumed silica.
  • fumed silica having a content of fumed silica having a particle size of 100 nm or less. It is 15% by volume or more, preferably 15 to 90% by volume of the total amount of fumed silica.
  • the polishing composition of the present invention preferably has a maximum frequency particle size (that is, a particle size having the largest volume ratio to the total amount of fumed silica) of 115 nm or less in the volume-based particle size distribution of fumed silica. More preferably, it is 80 to 115 nm. When the maximum frequency is in the above range, the effects of the present invention are more remarkably exhibited.
  • the volume-based particle size distribution and the particle size (including the average particle size) of the fumed silica are measured by a laser diffraction / scattering type particle size distribution analyzer (trade name: LA910, manufactured by Horiba, Ltd.) It is a value measured using.
  • the average primary particle diameter is preferably 1 to 500 nm, more preferably. Is 5 to 300 nm, particularly preferably 5 to 80 nm.
  • the specific surface area of the fumed silica is not particularly limited, the specific surface area measured by the BET method is preferably 400 m 2 / g or less, more preferably 50 to 50 ⁇ m, in consideration of its water dispersibility and polishing rate. 200 m 2 / g, particularly preferably 50 to 150 m 2 / g.
  • fumed silica two or more kinds of fumed silica having different average primary particle diameters and Z or specific surface areas can be used in combination.
  • Fumed silica can be produced, for example, by gas phase hydrolysis of silicon tetrachloride in an oxyhydrogen flame. Further, it can be produced by the method described in JP-A-2000-86227. According to the publication, a volatile silicon compound is supplied to a burner together with a combustible gas and a mixed gas containing oxygen, and is burned at a temperature of 1000 to 2100 ° C. to thermally decompose the volatile silicon compound. Thus, fumed silica can be produced.
  • known volatile silicon compounds can be used, for example, SiH, SiCl, CH SiCl, CH
  • a volatile silicon compound containing a halogen atom is preferable.
  • the volatile silicon compounds can be used each alone or two or more of them can be used in combination.
  • the combustible gas a gas that generates water by combustion in the presence of oxygen is preferable, and examples thereof include hydrogen, methane, and butane. Air can be used instead of oxygen.
  • the usage ratio of the volatile silicon compound and the mixed gas is appropriately selected according to the type of combustible gas contained in the mixed gas. For example, when the combustible gas is hydrogen, about 2.5 to 3.5 moles of oxygen and about 1.5 to 3.5 moles of hydrogen may be used per mole of the volatile silicon compound.
  • a commercially available fumed silica can also be used.
  • Specific examples thereof include AEROSIL 90G and AEROSIL 130 (both are trade names, manufactured by Nippon Aerosil Co., Ltd.).
  • the content of the fumed silica in the polishing composition of the present invention is not particularly limited and can be appropriately selected from a wide range according to the average primary particle diameter, the specific surface area, and the like.
  • the polishing composition is preferably used in an amount of from: to 30% by weight, more preferably from 10 to 28% by weight, based on the total amount of the polishing composition.
  • the polishing composition of the present invention may include, for example, a polishing accelerator, an oxidizing agent, an organic acid, a complexing agent, a corrosion inhibitor, a surfactant and the like within a range that does not impair the water dispersibility of the fumed silica. Common additives may be included.
  • Examples of the polishing accelerator include piperazines, primary amine compounds having 1 to 6 carbon atoms, and quaternary ammonium salts.
  • Examples of the piperazine include piperazine, anhydrous piperazine, piperazine hexahydrate, N-aminoethylpiperazine, 1,4-bis (3-aminopropyl) pirazine, and the like.
  • Examples of the primary amine compound having a carbon number of! To 6 include ⁇ -oxshetylamine ( ⁇ -aminoethyl alcohol), monoethanolamine (aminoaminoethyl alcohol), and aminoethylethanol. Min, triethylenetetramine, ethylenediamine and the like.
  • Examples of the quaternary ammonium salts include, for example, tetramethylammonium chloride, tetramethylammonium hydroxide, dimethylethylammonium chloride, ⁇ , ⁇ -dimethylmorpholinium sulfate, and tetrabutylammonium salt. And ammonium bromide.
  • One type of polishing accelerator can be used alone, or two or more types can be used in combination.
  • the content of the polishing accelerator in the polishing composition of the present invention is not particularly limited, but is preferably about 0.001 to 5% by weight of the total amount of the polishing composition.
  • Examples of the oxidizing agent include potassium iodate, periodic acid, potassium iodide, iodic acid and the like.
  • One oxidizing agent can be used alone, or two or more oxidizing agents can be used in combination.
  • the content of the oxidizing agent in the polishing composition of the present invention is not particularly limited, but is preferably about 0.01 to 20% by weight of the total amount of the polishing composition.
  • organic acids include monocarboxylic acids having 2 to 6 carbon atoms such as formic acid, acetic acid, propionic acid, butyric acid, valeric acid, and lactic acid, oxalic acid, malonic acid, succinic acid, tartaric acid, malic acid, fumaric acid, and the like.
  • examples thereof include dicarboxylic acids having 2 to 6 carbon atoms, tricarboxylic acids having 3 to 6 carbon atoms such as citric acid and isocunic acid, aromatic carboxylic acids such as salicylic acid, and ascorbic acid.
  • Organic acids also include the salts of the carboxylic acids and ascorbic acid.
  • One type of organic acid can be used alone, or two or more types can be used in combination.
  • the content of the organic acid in the polishing composition of the present invention is not particularly limited, but is preferably about 0.005 to 5% by weight of the total amount of the polishing composition.
  • complexing agents include ethylenediaminetetraacetic acid (EDTA), Rangenamine triacetic acid (HEDTA), diethylenetriamine pentaacetic acid (DTP A), nitrite triacetic acid (NTA), triethylenetetramine hexaacetic acid (TTHA), hydroxyethylimino diacetic acid (HIDA), dihydroxyethylglycine (DHEG), ethylene glycol-bis (/ 3-aminoethynoleether) -N, N, 14-acetic acid (EGTA), 1,2-diaminocyclohexane-N, N, ⁇ ,, ⁇ '_4 acetic acid (CDTA), etc. Is mentioned.
  • EDTA ethylenediaminetetraacetic acid
  • HEDTA Rangenamine triacetic acid
  • DTP A diethylenetriamine pentaacetic acid
  • NTA nitrite triacetic acid
  • TTHA triethylenetetramine hexaacetic acid
  • One complexing agent can be used alone, or two or more complexing agents can be used in combination.
  • the content of the complexing agent in the polishing composition of the present invention is not particularly limited, but is preferably about 0.005 to 5% by weight of the total amount of the polishing composition.
  • the corrosion inhibitor examples include benzotriazole, tolyltriazole, benzotriazole-4 monocarboxylic acid and its alkyl ester, naphthotriazole and its derivative, imidazole, quinaldic acid, and invar derivative.
  • One type of corrosion inhibitor can be used alone, or two or more types can be used in combination.
  • the content of the corrosion inhibitor in the polishing composition of the present invention is not particularly limited, but is preferably about 0.005 to 0.5% by weight of the total amount of the polishing composition.
  • surfactant examples include anionic surfactants such as a polyacrylate, an alkylbenzene sulfonate, an alkane sulfonate, and a -olefin sulfonate, a fatty acid monoethanolamide, a fatty acid diethanolamide, and a fatty acid ethylene.
  • anionic surfactants such as a polyacrylate, an alkylbenzene sulfonate, an alkane sulfonate, and a -olefin sulfonate, a fatty acid monoethanolamide, a fatty acid diethanolamide, and a fatty acid ethylene.
  • One surfactant may be used alone, or two or more surfactants may be used in combination.
  • the content of the surfactant is not particularly limited, but is preferably about 1% by weight or less of the total amount of the polishing composition, more preferably about 0.001 to:!% By weight.
  • the polishing composition of the present invention may contain alcohols as long as the preferable properties are not impaired.
  • alcohols for example, dissolution stability of a polishing accelerator or the like can be improved.
  • the alcohols aliphatic saturated alcohols having 1 to 6 carbon atoms are preferred. Specific examples thereof include, for example, methanol, ethanol, propanol, isopropanol, butanol, isobutanol, tert-butanol. And linear or branched aliphatic saturated alcohols having 1 to 6 carbon atoms, such as toluene, pentanol and hexanol. These alcohols may have a substituent such as a hydroxyl group in the alkyl moiety. Alcohols can be used alone or in combination of two or more.
  • the content of the alcohol in the polishing composition of the present invention is not particularly limited, but is preferably about 0.0 :! to 5% by weight of the total amount of the polishing composition.
  • the polishing composition of the present invention can be produced, for example, by a method including the following steps (1) to (5).
  • an acidic aqueous solution is prepared.
  • the acidic aqueous solution can be prepared by adding an acid to water.
  • Known acids can be used as the acid, and examples thereof include inorganic acids such as hydrochloric acid, nitric acid, and sulfuric acid, and organic acids such as phosphoric acid. Of these, hydrochloric acid, which is preferred by inorganic acids, is particularly preferred.
  • the acids can be used alone or in combination of two or more if necessary.
  • the pH of the acidic aqueous solution is preferably 1.0 to 3.0, more preferably 1.0 to 2.7, and particularly preferably 2.
  • an acidic aqueous solution and fumed silica are mixed to prepare an acidic fumed silica dispersion. It is preferable that the mixing is performed while high shearing force is applied.
  • the mixing time is not particularly limited, but is preferably 1 hour or more, and more preferably 2 hours or more.
  • the concentration of the fumed silica in the acidic fumed silica dispersion is not particularly limited, but is preferably 40 to 60% by weight, more preferably 46 to 54% by weight of the total amount of the dispersion.
  • water is added to the acidic fumed silica dispersion to dilute the concentration of the fumed silicate in the dispersion to preferably 30 to 45% by weight, more preferably 33 to 44% by weight.
  • the acidic fumed silica dispersion the concentration of fumed silica added 1 weight 0/0 decreased to that amount of water and mixed for about 10 to 40 minutes.
  • the mixing time after adding water to the acidic fumed silica dispersion liquid is not limited to the above, and can be appropriately selected according to the degree of dilution (water addition). In general, the greater the degree of dilution, the longer the mixing time.
  • an aqueous alkaline solution is prepared.
  • the alkaline aqueous solution can be prepared by adding alkali to water.
  • alkali can be used, for example, hydroxides of alkali metals such as ammonium hydroxide, sodium hydroxide and potassium hydroxide, and alkaline earth metals such as calcium hydroxide, barium hydroxide and magnesium hydroxide. Hydroxide and the like. Of these, ammonium hydroxide is more preferred, with alkali metal hydroxides and ammonium hydroxide being preferred.
  • One alkali can be used alone, or two or more alkalis can be used in combination as needed.
  • One or more general additives such as a polishing accelerator, an oxidizing agent, an organic acid, a complexing agent, a corrosion inhibitor, a surfactant and the like can be added to the aqueous alkali solution.
  • the pH of the alkaline aqueous solution is preferably 12-14.
  • the polishing composition of the present invention is prepared.
  • the polishing composition of the present invention can be prepared by calorically mixing an acidic aqueous fumed silica dispersion with an aqueous alkaline solution.
  • an acidic fumed silica dispersion For mixing, it is necessary to add an acidic fumed silica dispersion to an aqueous alkaline solution. Conversely, when an aqueous alkali solution is added to the acidic fumed silica dispersion, the water dispersibility of the fumed silica is reduced, and a desired polishing composition cannot be obtained. Also, upon mixing, the aqueous alkaline solution is strongly alkaline and the acidic fumed silica dispersion is strongly acidic. Agglomeration of do silica tends to occur. Therefore, according to the concentration of the fumed silica in the acidic fumed silica dispersion, it is preferable to add the calories so as not to cause aggregation. More preferably, an alkaline aqueous solution of an acidic fumed silica dispersion liquid It should be carried out so that the addition to the solution is completed within 5 hours.
  • the mixing ratio of the acidic fumed silica dispersion and the aqueous alkali solution is not particularly limited, but the pH of the polishing composition is preferably 8 to 12 and the fumed silica concentration is preferably 10 to 30% by weight. Mixing may be performed.
  • the polishing composition thus obtained can be subjected to classification, if necessary.
  • Classification can be performed according to a known method, for example, filtration with a filter.
  • a filter used for the filter filtration for example, a depth type filter having a filtration accuracy of about!
  • the water used for preparing the polishing composition of the present invention is not particularly limited, but in consideration of use, ultrapure water, pure water, ion-exchanged water, distilled water, and the like are preferable.
  • polishing a semiconductor device such as a wafer using the polishing composition of the present invention
  • a wafer 3 is placed on a pad 2 affixed to a polishing platen 1 such that a surface to be polished of the wafer 3 is in contact with the pad 2, and a pressure head 4 is mounted on the wafer 3.
  • the wafer 3 is polished by rotating the node 2 and the pressure head 4 while pressing and applying a constant load to the wafer 3 and supplying the polishing composition 5 to the surface of the pad 2. .
  • the polishing composition of the present invention can be used as a polishing composition in general CMP processing of wafers.
  • thin films formed on wafers such as metal films such as W, Cu, Ti, and Ta, ceramic films such as TiN, TaN, and SiN, and oxide films such as SiO and p-TEOS
  • a thin film such as a low dielectric film such as a HSQ film, a methylated HSQ film, a SiLK film, or a porous film is formed.
  • polishing composition of the present invention is not limited to CMP processing of a semiconductor wafer, and can be suitably used when polishing metals, ceramics, and the like for other uses.
  • a 0.9 wt% aqueous solution of ammonium hydroxide was added to ultrapure water to prepare a pH 13 aqueous solution of anorecali.
  • the obtained polishing composition was filtered with a filter having a filtration accuracy of 1 ⁇ m (trade name: Profile 2, manufactured by Pall Corporation) to remove coarse aggregated particles.
  • the polishing composition had an average particle size of fumed silica of 90 nm, a fumed silica concentration of 25% by weight, and a pH of 10.5.
  • the polishing composition of the present invention (fumed silica) was prepared in the same manner as in Example 1 except that the mixing time between the aqueous hydrochloric acid solution of pH 2 and the fumed silica was changed to 2 hours.
  • An average particle diameter of 110 nm, a fumed silica concentration of 25% by weight, and a pH of 10.5) were prepared.
  • the polishing composition of the present invention (fumed silica) was prepared in the same manner as in Example 1 except that the mixing time of the pH 2 aqueous hydrochloric acid solution and the fumed silica was changed to 4 hours.
  • the fumed silica is crushed in ultrapure water to a concentration of 30% by weight, dispersed for 30 minutes, and further dispersed by applying a shearing force using a high-shear disperser (Hibis Disper) to obtain a fumed silica concentration. 30 wt 0/0, were prepared fumed silica dispersion.
  • This fumed silica dispersion was mixed with a 0.9% by weight aqueous solution of ammonium hydroxide to obtain a polishing composition of Comparative Example 1 (average particle diameter of fumed silica 150 nm, fumed silica concentration 13% by weight, pH 10 7) was prepared.
  • a polishing composition was prepared according to Example 1 of the specification of Japanese Patent No. 2935125, filtered through a filter having a filtration accuracy of 5 ⁇ m, and then subjected to a polishing composition of Comparative Example 2 (average particle diameter of fumed silica of 120 nm). Fumed silica concentration 25% by weight, pH 11). In addition, this polishing composition was clogged with a filter having a filtration accuracy of 1 ⁇ m, and could not be sufficiently filtered.
  • a polishing composition was prepared according to Example 1 of the specification of Japanese Patent No. 2949633, and filtered through a filter having a filtration accuracy of 10 ⁇ m.
  • the polishing composition of Comparative Example 3 (average particle diameter of fumed silica of 120 nm) was used. , fumed silica concentration of 25 weight 0/0, pHl l) was prepared. In addition, this polishing composition was clogged with a filter having a filtration accuracy of 1 ⁇ m, and could not be sufficiently filtered.
  • a polishing composition was prepared according to Example 1 of JP-A-2001-26771, and filtered with a filter having a filtration accuracy of 3 ⁇ m.
  • the polishing composition of Comparative Example 4 (average particle diameter of fumed silica) was used. 131 nm, fumed silica concentration 12.5 wt 0/0, ⁇ . 5) was prepared. Note that this The polishing composition was clogged with a filter having a filtration accuracy of 1 ⁇ m, and could not be sufficiently filtered.
  • Fig. 2 shows the particle size (xm) on the horizontal axis and the frequency accumulation (%) on the vertical axis, and the volume ratio of particles of each particle size ( ⁇ ) or less in the polishing composition to the total fumed silica particles.
  • 3 and 4 the horizontal axis represents the particle diameter m) and the vertical axis represents the frequency (%), and the frequency (%) of the particles of each particle diameter in the polishing composition relative to the total fumed silica particles is expressed as the frequency (%). %).
  • 3A shows Example 1
  • FIG. 3B shows Example 2
  • FIG. 3C shows Example 3.
  • FIG. 4A shows Comparative Example 1
  • FIG. 4B shows Comparative Example 2
  • FIG. 4C shows Comparative Example 4.
  • the volume ratio of particles having a particle size of lOOnm or less is as follows: Example 1: 78%, Example 2: 20%, Example 3: 89%, Comparative example 1: 3%, Comparative example 2: 6%, Comparative example 4: 9%. Note that Comparative Example 3 showed almost the same as Comparative Example 2.
  • Example 1 0.100 xm
  • ⁇ row 2 115 xm
  • ⁇ row 3 0.087 zm
  • i comparison ⁇ Row 2 0.131 ⁇ m
  • Comparative Example 4 0.131 zm. Note that Comparative Example 3 showed almost the same value as Comparative Example 2.
  • polishing of silicon wafers was performed under the following conditions.
  • Silicon wafer 8 "_PETE ⁇ S, manufactured by Advantech Co., Ltd.
  • Polishing device Product name SH24, SpeedFam manufactured polishing pad: Product name IC1400A2, 0 50 K-Grv.24 "P9H Polishing table rotation speed: 60rpm
  • Polishing load surface pressure about 4.83 X 10 4 Pa (7psi)
  • the polished semiconductor wafer surface was observed with a wafer surface inspection device, and the number of polishing scratches having a diameter of 0.2 x m or more per semiconductor wafer was examined.
  • the polishing test was performed three times for each composition. The results are shown in Table 1.
  • the semiconductor polishing compositions of Examples: ⁇ 2 have less than 100 polishing scratches with a diameter of 0.2 / m or more, whereas the comparative examples:! ⁇ 3 It is evident that significantly more than 100 polishing scratches occur. At present, it is required that the number of polishing scratches having a diameter of 0.2 m or more is less than 100 for the purpose of securing the reliability of electrical connection of the semiconductor wafer. It is clear that this is an excellent semiconductor polishing composition that can satisfy the requirements.
  • a water dispersion of fumed silica 15 volumes of content force fumed silica the total amount of the following Hiyu fumed silica particle size lOOnm 0/0 or more, preferably 15 to 90 body product%
  • a semiconductor polishing composition is provided.
  • the polishing composition of the present invention has very little aggregation of fumed silicon force due to external load and / or long-term storage. Therefore, when a semiconductor device is polished using the polishing composition, the reliability of the electrical connection after polishing of the semiconductor device, which hardly causes polishing scratches on the semiconductor device, can be further improved. In addition, semiconductor devices can be efficiently polished (planarized) at a high polishing rate. Therefore, the yield of the semiconductor device after polishing can be improved, and the production efficiency can be increased.
  • the content of the fumed silica having a particle size of 100 nm or less is 15 vol% or more, preferably 15 to 90 vol%, and the maximum frequency in the volume-based particle size distribution of the fumed silica.
  • the content of fumed silica in the polishing composition of the present invention is preferably 10 to 30% by weight, more preferably 10 to 28% by weight of the total amount of the composition.
  • the content of fumed silica is within this range, its water dispersibility is particularly good.
  • the polishing composition of the present invention can be produced preferably by adding an acidic pseudosilica dispersion to an aqueous alkaline solution and mixing.
  • the pH of the aqueous alkali solution is 12 to: 14.

Abstract

Les stries de polissage à la surface d’un dispositif semi-conducteur sont réduites de manière significative sans endommager le bénéfice de la silice fumée, c’est-à-dire une vitesse élevée de polissage, même si la silice fumée fait partie d’un agent de polissage. Lorsqu’une puce (3) montée sur un bloc (2) collé sur un plateau rotatif (1) est polie en exerçant une force sur la puce (3) au moyen d’une tête de pression (4) et en faisant tourner le bloc (2) et la tête de pression (4), un liquide de dispersion aqueuse de silice fumée contenant 15 % ou plus de particules de silice fumée ayant une taille moyenne des particules de 100 nm ou moins sur la base de la totalité des particules de silice fumée est utilisé en tant que composition de polissage (5) fournie sur le bloc (2). Étant donné qu’il se produit rarement une agrégation de silice fumée en raison d’une charge externe et/ou d’une stockage de longue durée, les stries de polissage à la surface d'un dispositif semi-conducteur poli, en particulier celles ayant un diamètre de 0,2 µm ou plus sont rarement produites et on atteint une vitesse élevée de polissage.
PCT/JP2005/005767 2004-03-29 2005-03-28 Composition pour polir un semi-conducteur WO2005093803A1 (fr)

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JP2008235481A (ja) * 2007-03-19 2008-10-02 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物、その製造方法、及び研磨加工方法
JP5196819B2 (ja) * 2007-03-19 2013-05-15 ニッタ・ハース株式会社 研磨用組成物
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JP6846193B2 (ja) * 2016-12-26 2021-03-24 ニッタ・デュポン株式会社 研磨用スラリー

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JPH09193004A (ja) * 1995-11-10 1997-07-29 Tokuyama Corp 研磨剤
JP2001323255A (ja) * 2000-05-12 2001-11-22 Kao Corp 研磨液組成物
JP2004146780A (ja) * 2002-08-28 2004-05-20 Kao Corp 研磨液組成物

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JP3721497B2 (ja) * 1999-07-15 2005-11-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition

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Publication number Priority date Publication date Assignee Title
JPH09193004A (ja) * 1995-11-10 1997-07-29 Tokuyama Corp 研磨剤
JP2001323255A (ja) * 2000-05-12 2001-11-22 Kao Corp 研磨液組成物
JP2004146780A (ja) * 2002-08-28 2004-05-20 Kao Corp 研磨液組成物

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