WO2005078422A1 - Procede de fabrication d'un detecteur de gaz de combustion catalytique a microstructure, et detecteur de gaz utilisant ce detecteur de gaz de combustion catalytique a microstructure - Google Patents

Procede de fabrication d'un detecteur de gaz de combustion catalytique a microstructure, et detecteur de gaz utilisant ce detecteur de gaz de combustion catalytique a microstructure Download PDF

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Publication number
WO2005078422A1
WO2005078422A1 PCT/KR2005/000436 KR2005000436W WO2005078422A1 WO 2005078422 A1 WO2005078422 A1 WO 2005078422A1 KR 2005000436 W KR2005000436 W KR 2005000436W WO 2005078422 A1 WO2005078422 A1 WO 2005078422A1
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WO
WIPO (PCT)
Prior art keywords
gas
sensor
gas sensor
semiconductor
sensing
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Application number
PCT/KR2005/000436
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English (en)
Inventor
Won-Bae Lee
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Seju Engineering Co., Ltd.
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Filing date
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Application filed by Seju Engineering Co., Ltd. filed Critical Seju Engineering Co., Ltd.
Publication of WO2005078422A1 publication Critical patent/WO2005078422A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • G01N21/783—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour for analysing gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
    • G01N25/22—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures

Definitions

  • the present invention relates to a method for manufacturing a micro-structure catalytic combustion type gas sensor and a composite sensor using the same; and, more particularly, to a method for manufacturing a micro- structure catalytic combustion type gas sensor by using a micro-electro mechanical system (MEMS) , a single and a composite gas sensors using the method and a method for sensing a gas by using the same.
  • MEMS micro-electro mechanical system
  • a catalytic combustion type gas sensor used for detecting the combustible gas is a sense device using the change of the heating line e.g., a platinum line, generated by raising the temperature of the device due to a combustion heat of sensing gas.
  • a conventional catalytic combustion type gas sensor demands a lot of power for being heated since it has a large detecting surface in a shape of bead as well as it is manufactured in manual in producing structures and raising detectors.
  • the types of gas sensor are classified into a semiconductor type, a catalytic combustion type, a Galvani type, a potentiostatic type and an optical fiber type. Each sensor is used differently according to the ' types and the concentration of gases.
  • Fig. 1 is the perspective view of one embodiment for a composite sensor composing a conventional semiconductor type gas sensor in an array method.
  • Fig. 1 is a sensing device of composite gas sensor employing a semiconductor gas sensor.
  • a composite sensor integrated with a semiconductor gas sensor by a conventional technology includes: an alumina substrate 10; sensing material 40 as a plurality of sensors catalyst positioned on the top of the alumina substrate 10; a plurality of electrodes to measure the resistance change of the sensing material 40; and a platinum heater providing the heat to the sensing material.
  • the selectivity to the gas of semiconductor sensor can be increased.
  • each unit material shows similar gas reaction pattern, thereby causing a problem is difficult to have the precise quantization and selectivity according to the gas concentration.
  • the semiconductor sensor has a merit to use semi-permanently, , but also has a problem that the reliability is lower than that of the catalytic gas sensor, which lowers the reliability of the measured value than
  • an object of the present invention to provide a micro-structure catalytic combustion gas sensor, and sensing ability improved than using a single sensor by providing a composite gas sensor integrated with the semiconductor in the catalytic combustion gas sensor, and the composite gas sensor which can sense a gas reaction pattern more precisely than semiconductor composite sensor. It is, therefore, another object of the present invention to provide the composite gas sensor that when integrating the semiconductor gas sensor in the catalytic combustion gas sensor, semiconductor sensor is used in a general state, but gas sensing method to measure a gas reaction pattern by the catalytic combustion gas sensor is used in a state that the gas is detected, which can extend the life time of the sensor and make the sense ability more precise. 5 Technical Solution
  • a method for manufacturing a0 micro-structure catalytic combustion type gas sensor comprising the steps of: forming a sensor substrate by forming a pair of thin insulation layers on both surfaces of a silicon substrate; forming at least one window by locally etching portions of one of the thin insulation5 layers of the sensor substrate to expose the silicon substrate; forming a conductive pattern provided with at least one heater and a plurality of electrodes, wherein the conductive pattern is extended to both ends of the insulation layer with crossing tops of the windows formed0 on the substrate; forming at least one groove by etching portions below the heaters which are exposed by the windows; and forming at least one catalytic combustible sensing material by coating an alumina carrier in a form of paste, wherein the alumina carrier is obtained by highly5 diffusing a catalyst such as platinum and palladium on the conductive pattern.
  • a gas sensor including: a substrate; a plurality of electrodes formed on the substrate; at least one heater electrically connected to two electrodes to supply a heat; at least one catalytic combustible gas sensing device formed by coating an alumina carrier obtained by highly diffusing a catalyst on tops of the heaters; and at least one groove formed by etching5 portions of the substrate below the heaters to increase a thermal efficiency of the sensor.
  • gas sensor further including: at least one heater including the same structure with the gas sensor; a plurality of electrodes connected to the heater; at least one compensating device formed on tops of the heaters; and at least one groove formed by etching portions of the substrate below the heaters.
  • a gas sensor including: at least one heater including a material similar to that of the gas sensor; a plurality of electrode connected to the heaters; at least one semiconductor sensing device obtained by coating and sintering an oxide semiconductor doped with a platinum (Pt) on the heaters; a plurality of resistance sensing lines for measuring the resistance of the semiconductor sensing devices; and at least one groove formed by etching portions of the substrate below the heaters .
  • the catalyst of the catalytic combustible sensing devices are a material selected from a group consisting of a platinum(Pt) , a palladium (Pd) or a combination thereof.
  • a method for sensing a gas by using a sensor integrated with a catalytic combustible gas sensing unit provided with a catalytic combustible gas sensing device and a semiconductor gas sensing unit in a gas sensor separated with each other, including; operating the semiconductor gas sensing unit at an initial operating environment; identifying whether the gas is measured or not through the semiconductor gas sensing unit; and operating the catalytic combustible gas sensing unit and the semiconductor gas sensing unit, when the measuring gas is sensed at the step of identifying the gas .
  • a method further comprising the steps of: quantizing a measured value such as a concentration of the measured gas through a microprocessor or the like; and displaying the quantized result so as to identify the result of the quantized result by the operator.
  • the present invention can raise the selectivity of gas sensing by integrating a plurality of catalytic combustion gas sensing unit and improve the precision of the gas sensing by compensating the measured value.
  • this invention can raise the selectivity of gas sensing by the sensing unit integration of heterogeneous method since integrating the semiconductor sensing unit with the catalytic combustion sensing unit.
  • gas is detected by the method of gas sensing according to the invention, and precise measuring is needed, that is, only in case that a gas is detected in the semiconductor gas sensing unit, the catalytic combustion sensing unit having a short life time than the semiconductor gas sensing unit is operated, which enables the life time of the catalytic combustion sensing unit to be expanded by reducing the unnecessary operation.
  • Fig. 1 is a perspective view illustrating an embodiment for a semiconductor composite sensor integrated with the semiconductor gas sensor in an array method according to a conventional art
  • Figs. 2 to 6 are cross-sectional diagrams showing a process for manufacturing a miniaturized catalytic combustion gas sensor in accordance with the present invention
  • Fig. 7 is a conceptual 'diagram showing a first embodiment of the catalytic combustion gas sensor provided with compensating devices in accordance with the present invention
  • Fig. 1 is a perspective view illustrating an embodiment for a semiconductor composite sensor integrated with the semiconductor gas sensor in an array method according to a conventional art
  • Figs. 2 to 6 are cross-sectional diagrams showing a process for manufacturing a miniaturized catalytic combustion gas sensor in accordance with the present invention
  • Fig. 7 is a conceptual 'diagram showing a first embodiment of the catalytic combustion gas sensor provided with compensating devices in accordance with the present invention
  • Fig. 1 is a perspective view illustrating an embodiment for a semiconductor composite sensor integrated with the
  • FIG. 8 is a plan view showing a composite gas sensor integrated with a semiconductor gas sensor as a compensating device in the catalytic combustion gas sensor provided with a compensating device in accordance with a second embodiment of the present invention
  • Fig. 9 is a plan view showing a composite gas sensor integrated with the semiconductor gas sensor with the catalytic combustion gas sensor in accordance with a third embodiment of the present invention
  • Fig. 10 is a flow chart showing a process for sensing a gas by using a composite gas sensor integrated with the semiconductor gas sensor and the catalytic combustion gas sensor in accordance with the second and third embodiments of the present invention.
  • a method for manufacturing a micro-structure catalytic combustion type gas sensor using a Micro Electro Mechanical System(MEMS) technology includes the steps of: forming a sensor substrate 100 by forming a pair of insulation layers 101 and 103, which is 0.1 to 10 microns, in particular, 2 microns, on both surfaces of a silicon substrate 100 (Fig.
  • forming at least one window 104 by locally etching central portions of one 101 of insulation layers of the sensor substrate 100 by a method such as a photolithography to expose the silicon substrate 102 (Fig. 3) ; forming a conductive pattern 130 functioning as a heater, a sensing unit and an electrode, wherein the conductive pattern is extended with crossing a top of the window 104 formed on the substrate 100 to both ends of the insulation layer(Fig. 4); forming at least one groove 110 below the conductive pattern by etching the part of the silicon substrate 102 exposed through the windows 104 with dipping the substrate 100 into an alkali solution, wherein the conductive pattern 130 is formed on the window 104 (Fig.
  • a gas sensor in accordance with another aspect of the present invention includes: a substrate 100; a first electrode 120 and a second electrode 121 formed on the substrate; a heater electrically connected to two electrodes to supply a heat and the first platinum conducting line 130 which is the conductive pattern working as a gas sensing device; a catalytic combustible gas sensing material 106 by coating an alumina carrier in the form of paste, wherein the alumina carrier is obtained by highly diffusing a catalyst on the conductive pattern 130; and at least one groove 110 formed by etching portions of the substrate below the heaters to increase a thermal efficiency of the sensor.
  • Fig. 7 is a conceptual diagram showing a second embodiment of catalytic combustion gas sensor provided with compensating devices in accordance with the present invention. A composite sensor in accordance with a second embodiment of the present invention, as shown in Fig.
  • a third electrode 122 on the substrate 100 further includes: a third electrode 122 on the substrate 100; a second platinum conducting line connecting the second electrode 121 and the third electrode 122 among the electrodes of the substrate 100; a catalytic combustion sensing material 107 by coating an alumina carrier in a form of paste, wherein the alumina carrier is obtained by highly diffusing a catalyst such as platinum and palladium on the second platinum conducting line 131; a groove 111 formed by etching a portion of a substrate below the second platinum conducting line 131 to increase a thermal efficiency of the sensor, into the gas sensor in accordance with the first embodiment.
  • the composite sensor measures the gas more precisely by compensating the values measured at each sensing device.
  • the composite sensor includes the two sensing materials 106 and 107 in accordance with the preferred embodiment of the present invention, but additional sensing materials can be added thereinto.
  • Figs. 8 and 9 are plan views of the third and the fourth embodiments of the present invention integrated with the catalytic combustion sensor and the semiconductor gas sensor into one sensor. As shown in Fig. 8, in accordance with the third embodiment of the present invention, the composite sensor further includes the semiconductor sensing device into the first embodiment.
  • the composite sensor comprises; a silicon substrate 200 provided with a first electrode 220, a second electrode 221, a third electrode 222 and a fourth electrode 223; a first platinum conducting line 230 connecting the second electrode 221 to the first electrode 220 of the substrate 220; a second platinum conducting line 231 connecting the second electrode 221 to the third electrode 222; a catalytic combustion sensing material 206 formed by coating an alumina carrier in a form of paste, wherein the alumina carrier is obtained by highly diffusing a catalyst such as platinum and palladium on the first platinum conducting line 230; a semiconductor sensing material 207 obtained by coating and sintering the oxide semiconductor doped with the platinum catalyst on the second platinum conducting line 231; a resistance sensing line 232 formed in such a way that it is contact to the semiconductor sensing material 207 with extending to the fourth electrode 223 to measure the resistance of the semiconductor sensing material; a first groove 210 and a second groove 211 formed by etching portions of the silicon substrate 200 below the first platinum conducting line
  • the fourth electrode 223 is not the electrode for providing the heat such as other electrodes, but is the resistance measuring electrode for measuring the resistance of the semiconductor sensing device 211 with connecting to the resistance sensing line.
  • Such a structure can embody the merits of each sensor in one sensor by integrating the semiconductor gas sensor and the catalytic combustion gas sensor.
  • the merits of the semiconductor gas sensor are that the output change is large, that the time for the initial stabilization does not take long, that the life time is semi-permanent and that using by the low power is possible, and the merits of the catalytic combustion gas sensor are that sensing precision is high and that are not effected much by the temperature and humidity, and finally the gas sensor having both advantages of the durability of the semiconductor gas sensor and the precision of the catalytic combustion gas sensor is realized.
  • the method to sense such a gas sensor is described as following with reference to Fig. 10. Fig.
  • Fig. 9 is a fourth embodiment of the present invention further including the catalytic combustion sensing device as a compensating device for compensating the measured value of the catalytic combustion sensing device in accordance with the second embodiment. That is, Fig. 9 is the integration of the second embodiment and the third embodiment . In accordance with third embodiment of the present invention, as shown in Fig.
  • a composite gas sensor inlcudes: a silicon substrate 300 provided with a first electrode 320, a second electrode 321, a third electrode 322, a fourth electrode 323 and a fifth electrode 324; a first platinum conducting line 330 connecting the first electrode 320 to the second electrode 321 of the silicon substrate 300; a second platinum conducting line 331 connecting the second electrode 321 to the third electrode 322 of the silicon substrate 300; the third platinum conducting line 332 connecting the third electrode 322 and the fourth electrode 323 of the silicon substrate 300; a first catalytic combustion sensing material 306 formed by coating an alumina carrier in a form of paste, wherein the alumina carrier is obtained by highly diffusing a catalyst such as platinum and palladium on the first platinum conducting line 330; a second catalytic combustion sensing material 307 formed by coating an alumina carrier in a form of paste, wherein the alumina carrier is obtained by highly diffusing a catalyst such as platinum and palladium on the second platinum conducting line 331; a semiconductor sensing
  • the second catalytic combustion sensing material 311 is added and functions as a compensating device in the third embodiment, it is possible to perform the more precise measurement.
  • the number of the sensing device is not limited to the number related to the mentioned embodiment, but the selectivity and the precision of the gas sensing can be raised by integrating one or more semiconductor sensing device and one or more catalytic combustion sensing device.
  • each platinum conducting line functions as the heater providing heat and sensing the gas, and the material is not limited to the platinum, but the conducting lines are available.
  • Fig. 10 is a flow chart showing a process for sensing a gas by using a composite gas sensor integrated with the catalytic combustion gas sensor and the semiconductor gas sensor in accordance with the third and fourth embodiment of the present invention.
  • Fig. 10 is a flow chart showing a process for sensing a gas by using a composite gas sensor integrated with the catalytic combustion gas sensor and the semiconductor gas sensor in accordance with the third and fourth embodiment of the present invention.
  • a method for sensing a gas including the steps of: operating semiconductor gas sensing unit at an initial operating environment if the sensor is turned on, and the operation of the sensor is started in order to sense a gas at step 1002; identifying whether the gas is measured or not through the semiconductor gas sensing unit at step 1003; operating the catalytic combustible gas sensing unit and the semiconductor gas sensing unit at step 1005; quantizing the measured value such as a gas concentration of the measured gas through a micro processor or the like at step 1006; and displaying the quantized result so as to identify the quantized result by the operator at step 1007.
  • the procedure operating the semiconductor gas sensing device is continuously performed at step 1004, in case that the gas is detected, the procedure operating all sensing devices of the composite gas sensor are performed at step 1006, thereby more precisely quantizing the measurement value by ⁇ compensating the measurement value.
  • the composite gas sensor of the present invention is capable of expending the life time of the ' catalytic combustion gas sensing device incorporated thereinto.
  • the catalytic combustion gas sensor in accordance with the first embodiment has an advantage in operating at a low power by forming the groove 110 in the bottom and another advantage for preventing the life time from being shortened by the damage of the silicon substrate 100 due to the heat, since the substrate 100 are not in contact with the platinum conducting line 130.
  • the sensor in case that a sensor is formed by being compositively combined with the catalytic combustion gas sensor like the composite gas sensor, the sensor can have more precise result than the semiconductor composite gas sensor, the superior selectivity to the single catalytic combustion gas sensor, and since the plurality of sensing devices can compensate the measured value and the sensor can have more precise result than the single catalytic combustion gas sensor.
  • the selectivity of the gas sensing can be increased since the each sensing device is operated by different method.
  • the composite gas sensor can quantize with compensating the measured value precisely by measuring with use of several sensing devices. If the method operating the composite gas sensor is performed in accordance with the second and the third embodiments according to the order shown in Fig. 10, the semiconductor gas sensor having a long life time is mainly used, and the catalytic combustion gas sensor is operated in order to raise the precision only when the gas is detected, thereby allowing the catalytic combustion gas device to expand its life time.
  • the present invention can provide a composite gas sensor having excellent characteristics in the life time of the whole gas sensors and in the precision or the like by the above-described operating effects.
  • the present application contains subject matter related to Korean patent application No. 2004-10045, filed in the Korean Intellectual Property Office, the entire contents of which is incorporated herein by reference. While the present invention has been described with respect to certain preferred embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the scope and sprit of the invention as defined in the following claims.

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Abstract

Détecteur de gaz composite pourvu d'un dispositif de compensation par miniaturisation d'un capteur de combustion catalytique. La présente invention a pour objet de proposer un détecteur de gaz composite apte à mesurer un profil de réaction gazeuse avec plus de précision qu'un capteur composite à semi-conducteurs. La présente invention se rapporte donc à un détecteur de gaz de combustion catalytique à microstructure, et à une capacité de détection améliorée par rapport à celle d'un détecteur unique grâce à un détecteur de gaz composite intégré avec le semi-conducteur dans le détecteur de gaz de combustion catalytique, ce détecteur de gaz composite étant apte à détecter un profil de réaction gazeuse avec plus de précision qu'un capteur composite à semi-conducteurs. Selon un autre aspect de la présente invention, le détecteur de gaz comprend un substrat ; deux électrodes formées sur le substrat ; un élément chauffant relié électriquement aux deux électrodes afin de produire de la chaleur et à un conducteur servant de dispositif détecteur de gaz ; un produit détecteur de gaz combustible catalytique par revêtement d'un support en alumine sous forme de pâte, le support en alumine étant obtenu par diffusion poussée d'un catalyseur sur le motif conducteur ; et au moins une rainure formée par gravure dans certaines parties du substrat sous les éléments chauffants afin d'augmenter le rendement thermique du capteur. La présente invention se rapporte également à un procédé de détection d'un gaz à l'aide d'une détecteur de gaz composite incorporant le détecteur de gaz de combustion catalytique et le détecteur de gaz à semi-conducteurs, lequel procédé consiste à faire fonctionner l'unité de détection de gaz à semi-conducteurs dans un milieu initial au cas où le détecteur serait à l'état actif et à amorcer le fonctionnement du détecteur afin de détecter un gaz ; à identifier si oui ou non le gaz est mesuré au moyen de l'unité de détection de gaz à semi-conducteurs ; et à activer l'unité de détection de gaz combustible catalytique et l'unité de détection de gaz à semi-conducteurs.
PCT/KR2005/000436 2004-02-16 2005-02-16 Procede de fabrication d'un detecteur de gaz de combustion catalytique a microstructure, et detecteur de gaz utilisant ce detecteur de gaz de combustion catalytique a microstructure WO2005078422A1 (fr)

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KR1020040010045A KR20050081691A (ko) 2004-02-16 2004-02-16 접촉연소식 소형 가스센서 제조방법 및 접촉연소식 소형가스센서를 이용한 가스센서
KR10-2004-0010045 2004-02-16

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Cited By (5)

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CN104285500A (zh) * 2012-05-08 2015-01-14 剑桥Cmos传感器有限公司 红外线发射器与ndir传感器
JP2016061593A (ja) * 2014-09-16 2016-04-25 ヤマハファインテック株式会社 接触燃焼式ガスセンサ
JP2017156300A (ja) * 2016-03-04 2017-09-07 新コスモス電機株式会社 接触燃焼式ガスセンサ、接触燃焼式ガスセンサの検出素子構造体、および、接触燃焼式ガスセンサの検出素子の製造方法
CN114324481A (zh) * 2021-12-27 2022-04-12 浙江工业大学 一种催化燃烧式氢气传感器及其制备方法
US12013363B2 (en) 2018-12-03 2024-06-18 Carrier Corporation Combustible gas sensor

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KR101498594B1 (ko) * 2013-06-14 2015-03-05 전자부품연구원 접촉 연소식 가스센서 및 가스센서 제조 방법
KR101705542B1 (ko) * 2015-03-09 2017-02-10 한국에너지기술연구원 가스센서를 이용한 가스 누출 폭발 화재 방지 장치 및 그 제어 방법
JP2019211395A (ja) * 2018-06-07 2019-12-12 ヤマハファインテック株式会社 接触燃焼式ガスセンサ及びその製造方法
CN113514499A (zh) * 2020-04-10 2021-10-19 中国石油化工股份有限公司 内嵌式三维结构微加热板及制备方法、气体传感器
CN113984847A (zh) * 2021-10-26 2022-01-28 贵州航天天马机电科技有限公司 一种催化气体传感器及其制作工艺

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WO2001028915A1 (fr) * 1999-10-19 2001-04-26 Seju Engineering Co., Ltd. Capteur de gaz et procede de fabrication associe
JP2003215095A (ja) * 2002-01-23 2003-07-30 Matsushita Electric Ind Co Ltd ガスセンサ
JP2003222608A (ja) * 2002-01-30 2003-08-08 Matsushita Electric Ind Co Ltd ガスセンサの製造方法

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US5401376A (en) * 1993-04-09 1995-03-28 Ciba Corning Diagnostics Corp. Electrochemical sensors
WO2001028915A1 (fr) * 1999-10-19 2001-04-26 Seju Engineering Co., Ltd. Capteur de gaz et procede de fabrication associe
JP2003215095A (ja) * 2002-01-23 2003-07-30 Matsushita Electric Ind Co Ltd ガスセンサ
JP2003222608A (ja) * 2002-01-30 2003-08-08 Matsushita Electric Ind Co Ltd ガスセンサの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104285500A (zh) * 2012-05-08 2015-01-14 剑桥Cmos传感器有限公司 红外线发射器与ndir传感器
JP2016061593A (ja) * 2014-09-16 2016-04-25 ヤマハファインテック株式会社 接触燃焼式ガスセンサ
JP2017156300A (ja) * 2016-03-04 2017-09-07 新コスモス電機株式会社 接触燃焼式ガスセンサ、接触燃焼式ガスセンサの検出素子構造体、および、接触燃焼式ガスセンサの検出素子の製造方法
US12013363B2 (en) 2018-12-03 2024-06-18 Carrier Corporation Combustible gas sensor
CN114324481A (zh) * 2021-12-27 2022-04-12 浙江工业大学 一种催化燃烧式氢气传感器及其制备方法
WO2023123669A1 (fr) * 2021-12-27 2023-07-06 浙江工业大学 Capteur d'hydrogène de type à combustion catalytique et son procédé de préparation

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