WO2005053053A1 - Dispositif emetteur de lumiere comportant une couche de protection contre la gravure - Google Patents

Dispositif emetteur de lumiere comportant une couche de protection contre la gravure Download PDF

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Publication number
WO2005053053A1
WO2005053053A1 PCT/IB2004/052380 IB2004052380W WO2005053053A1 WO 2005053053 A1 WO2005053053 A1 WO 2005053053A1 IB 2004052380 W IB2004052380 W IB 2004052380W WO 2005053053 A1 WO2005053053 A1 WO 2005053053A1
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WO
WIPO (PCT)
Prior art keywords
layer
light
emitting device
etch
anode
Prior art date
Application number
PCT/IB2004/052380
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English (en)
Inventor
Cornelis A. H. A. Mutsaers
Giovanni Nisato
Original Assignee
Koninklijke Philips Electronics N.V.
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Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2005053053A1 publication Critical patent/WO2005053053A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Light-emitting device comprising an etch-protective layer
  • the present invention relates to a light-emitting device comprising a stack of layers of a substrate comprising at least one polymeric layer and at least an inorganic barrier layer, an anode layer, a light-emitting layer, a cathode layer, and optionally metal shunts, at least the anode layer or metal shunts being patterned.
  • the present invention also relates to a stack of said layers as such. Electroluminescent devices such as LED's are known in the art. In US 5,952,778 an encapsulated organic light-emitting device was disclosed comprising an organic light-emitting material sandwiched between a first (anode) electrode and a second (cathode) electrode.
  • the outer surface of the first electrode is suitably contiguous to a substrate preferably transparent e.g., glass.
  • the outer surface of the second electrode is contiguous to a protective cover layer.
  • the second electrode comprises an alkali metal, alkaline earth metal, rare earth metal or alloys thereof.
  • the protective cover layer shields the device from ambient contaminants, oxygen, and water to prevent its oxidation and degradation.
  • the protective cover layer may comprise three contiguous layers as follows: a first layer of thin film deposited passivation metal, a second layer of thin film deposited dielectric material, such as silicon dioxide or silicon nitride and a third layer of a hydrophobic polymer.
  • the protective cover layer protects the organic electroluminescent material and the reactive electrode from oxidative and hydrolytic degradation in an ambient environment, thereby substantially improving the lifetime of the device.
  • Such device is made on a glass substrate.
  • flexible poly-LED's polymer light emitting diodes
  • Organic electroluminescent devices materials and structure are known in the art, for instance as disclosed in Tang, US Pat. No. 4,356,429, Shi et al, U.S. Pat. No. 5,593,788, and Heeger, U.S. Pat. No. 5,408,109, the disclosures of which are incorporated herein by reference for all purposes.
  • Organic electroluminescent devices generally comprise an organic electroluminescent material sandwiched between two electrodes.
  • the organic electroluminescent material is a multilayer structure comprising an electron transport layer, PHNL031371 p c ⁇ /
  • the material Upon application of an electrical current, the material radiates light generated by recombination of electrons and holes in the organic material.
  • the organic luminescent materials are sensitive to contamination, oxidation and humidity.
  • the electrodes are also sensitive to contamination, oxidation, and humidity.
  • Heeger teaches fabricating the OLED cathode electrode from a low work function metal such as calcium.
  • the invention pertains to a light-emitting device comprising a stack of layers of a substrate comprising at least one polymeric layer and at least an inorganic barrier layer, an anode layer, a light-emitting layer, a cathode layer, and optionally metal shunts, at least the anode layer or metal shunts being patterned, wherein sandwiched between the barrier layer and the anode an etch-protective layer is provided.
  • the substrate preferably is a flexible substrate.
  • the device further may have an optional cover layer.
  • the stack of layers as such is a subject of the' invention.
  • the etch-protective layer is etch-resistant to etchants capable of etching indium tin oxide layers, metal layers, in particular to metal layers used in the shunts, and the inorganic barrier layer.
  • the etch-protective layer may consist of a single layer or a multitude of layers. Suitable materials are inorganic compounds like metal oxides (such as titanium oxide, niobium oxide, or tungsten oxide), silicon oxides, silicon nitrides, and silicon oxi-nitrides, and combinations thereof. This layer protects the inorganic barrier layer during the processing with etching agents like HCl, H 3 P0 , HN0 3 , and alkaline solutions.
  • etching agents are typically used to pattern indium tinoxide layers and shunt metal layers.
  • These protective layers can be obtained by known PVD, CVD, PECVD, evaporation, spraying, spin coating, printing (screen-printing), or Blade coating techniques, and the like.
  • the barrier layer is a water and gas impermeable layer, which may consist of a single layer or a multitude of layers. Suitable materials are metal oxides such as aluminum oxide and polymers such as poly(meth)acrylate. Most preferably, the barrier layer is made of aluminum oxide. These barrier layers can be obtained by known PVD, CVD, PECVD, evaporation, spraying, spin coating, printing (screen-printing), or Blade coating techniques, and the like.
  • a multilayered barrier layer that consists of, for instance six thin aluminum oxide layers of 20-40 ⁇ m alternated with polyacrylate layers of about 40-60 ⁇ m.
  • the barrier layer and the protective layer can be blanket deposited onto a substrate.
  • the ITO (anode) as well as the optional metal layer (shunts) are applied and patterned by lithographic techniques and etching.
  • These metals preferably have a lower resistivity than ITO, and are selected from copper, silver, aluminum, gold, tungsten, molybdenum, and the like, or combinations thereof.
  • a photo-resist layer and cathode isolation resist lines (paddo lines) the pixel pattern of the device may be formed. This completes the backplane process.
  • the devices may be covered with a hole-transporting material, such as poly-ethylendioxythiophene (PEDOT).
  • PEDOT poly-ethylendioxythiophene
  • a layer of light- emissive material such as a light emitting polymer or a low molecular weight emissive material is then deposited and on top of this the cathode is evaporated.
  • a barrier layer is used in order to protect the cathode materials and light-emissive material from oxidation by air and or hydrolysis by water vapor.
  • a variety of organic light-emitting compositions can be utilized in the present invention such as those disclosed in the above-mentioned patents.
  • the composition can be of low molecular weight or polymeric.
  • Suitable light-emitting low molecular weight compositions include aromatic compounds such as derivatives of anthracene, naphthalene, phenanthrene, pyrene, chrysene and perylene; butadienes such as 1,4-diphenylbutadiene and tetraphenylbutadiene; coumarins; acridine; stilbenes such as transtilbene; and metallo- quinoline such as tris-hydroxy quinolinate aluminum and other metal chelates and host- dopant combinations such as described in Appl. Phys. Letter 67, 3853 and Appl. Phys. Letter 69, 3309, the disclosures of which are incorporated herein by reference.
  • These low molecular weight light-emitting materials may be deposited by standard thin-film preparation techniques including vacuum evaporation or sublimation. These light-emitting low molecular weight compounds can also be dispersed in a polymeric binder. Suitable binders include poly(vinylcarbazole), poly(vinyltoluene), poly(methylmethacrylate), poly(acrylonitrile), and poly(vinylacetate); and condensation polymers such as polyesters, polycarbonates, polyimides, and polysulfones. Optionally, the polymer can itself exhibit light-emitting properties (e.g., side chain bonding of light-emitting substituent). The light-emitting composition can also be polymeric.
  • Suitable polymers for use in the composition of the present invention are (derivatives of) poly( ⁇ henylene vinylene) e.g., poly(l,4-phenylene vinylene); poly(2,5-dialkoxy-l,4-phenylene vinylene); poly(2,5- dialkyl-l,4-phenylene vinylene); poly(phenylene) poly(2,5-dialkyl-l,4-phenylene); poly((p- phenylene); poly(thiophene) e.g., poly(3-alkylthiophene); poly(fluorene) e.g., poly(9,9- dialkyl fluorene), and copolymers of the above functionalities where the alkyl and alkoxy substituents have 1 -20 carbon atoms.
  • poly( ⁇ henylene vinylene) e.g., poly(l,4-phenylene vinylene); poly(2,5-dialkoxy-l,4-phenylene vinyl
  • the polymers can also be substituted with aryl substituents e.g., phenyl and benzyl.
  • a preferred composition is poly(2-methoxy, 5-(2-ethyl- hexyloxy)-l,4-phenylene vinylene (MEH-PPV).
  • organic salts can be dispersed in the composition. Suitable organic salts are tetra-alkyl, aryl, or hetero-aryl quaternary ammonium salts including tetra Cl-6 alkyl ammonium toluenesulfonate, tetra Cl-6 alkyl ammonium tetrafluoroborate, and tetra Cl-6 alkyl ammonium tetraphenylborate.
  • the hole conducting-injecting material comprises poly(3,4-ethylene dioxythiophene (PEDOT) and the light-emitting material comprises poly(p-arylene vinylene).
  • the light-emitting device can comprise a multi-layered organic structure (e.g., from 3 to 9 layers) with the organic hole injecting and/or transporting materials contiguous to the anode and the organic electron injecting and/or transporting materials adjacent to the cathode.
  • the anode electrode suitably comprises transparent indium tin oxide or doped tin oxide or aluminum doped zinc oxide.
  • the anode electrode is suitably supported on a polymeric transparent substrate such as a polymer substrate such as polyethylene tere- phthalate or polyvinyl acetate.
  • the anode layer is typically patterned.
  • the cathode layer electrode comprises a metal with a low work function (e.g., less than 4.0 eV, preferably less than 3.5 eV) selected from alkali metals, alkaline earth metal, or rare earth metal, or alloys thereof.
  • Preferred metals are barium, calcium or alloys such as magnesium/silver; lithium/aluminum; or magnesium/aluminum. These metals provide low work function and thus enhanced quantum efficiency for the device.
  • the protective cover layer which may be present, is preferably contiguous to cathode layer electrode. It may contain more layers, for instance three. If containing three layers, the first layer of the protective cover layer contiguous to the electrode layer comprises a relatively stable metal, preferably aluminum or a transition metal, to passivate the reactive metal cathode layer.
  • the metal will preferably be deposited onto the electrode using thin film deposition techniques without breaking vacuum through the same mask utilized to deposit the electrode onto the layer of the organic composition. Suitable metals include gold, silver, aluminum, and indium. Thin film, deposition technique are well known to those skilled in the art such as ion beam deposition, electron beam deposition chemical vapor deposition, thermal evaporation, plasma beam deposition, and sputter deposition.
  • the metal layer is preferably deposited by thermal evaporation.
  • the second layer comprises a dielectric material, preferably deposited by thin film deposition techniques. Suitable inorganic dielectric materials include silicon oxide (e.g., silicon monoxide or silicon dioxide), silicon nitride, germanium oxide, and insulating transition metal oxide (e.g., zirconium oxide). Preferably, the second layer is silicon nitride.
  • the second layer is also suitably deposited by thermal or chemical vapor deposition (e.g., plasma enhanced CVD). The second layer is preferably deposited to a thickness less than 500 ran, preferably about 50 nm to 200 nm, to avoid cracking associated with thicker beam deposited layers of inorganic dielectric materials.
  • the third layer of the protective cover layer comprises a hydrophobic polymer.
  • Suitable hydrophobic materials include polysiloxanes, polytetrafluoethylene (Teflon®), and branched polyolefins, e.g. polyethylene and polypropylene.
  • the polymers are preferably adherent, so that they will adhere to the second layer.
  • the optional metal shunts may be a metal selected from Group III or IB metals and transition metals such as silver, gold, copper, aluminum, tungsten, molybdene, chromium, and the like, and are preferably patterned. Combinations and alloys of these metals are very suitable, such as molybdenum chrome / aluminum / molybdenum chrome (MAM).
  • the metal shunts are provided to reduce the line resistance of the anode layer (ITO) and/or the cathode layer. Shunts may be provided in cathodes and/or anodes by commonly known sputtering and etching methods.
  • the etch-protective layer cooperates to effectively protect the barrier layer during the processing of the device, especially against the normal etching procedures that are used to etch the anode layer and/or the shunts.
  • Fig. 1 is a top view of an embodiment of the light-emitting device of the present invention.
  • Fig. 2 is a cross-sectional view of the embodiment of FIG. 1.
  • Fig. 3 is a graph showing the decrease of the layer thickness as function of the etching time.
  • the present invention generally relates to an encapsulated light-emitting device comprising an organic light-emitting composition disposed between a first and second electrode.
  • Fig. 1 and 2 there is shown an embodiment of the device comprising the light-emitting layer 1 sandwiched between and contiguous with cathode layer 2 and transparent anode layer 3.
  • the anode electrode is supported on a substrate 4.
  • An optional cover layer 5 is contiguous to cathode layer 2.
  • When a voltage is applied to electrodes 2 and 3 light is emitted from light-emitting layer 1 and radiates from the device through transparent anode layer 3 and substrate 4.
  • the device according to this figure contains the optional metal shunts 6.
  • the anode or the cathode layer or both may be provided with the optional shunts 6, which are separated from the cathode layer by isolation resist lines 9.
  • an inorganic barrier layer 7 is placed between the substrate 4 and anode layer 3 .
  • the barrier layer 7 is protected with an etch-protective layer 8.
  • the layer 8 protects the barrier layer 7 against processing steps, such as etching the anode layer 3 and the shunts 6.
  • Fig. 1 the isolation resist 9 and the cathode isolation resist lines (10) are shown.
  • the invention enables using materials with suitable barrier properties, which include materials that may dissolve under such etching conditions. Common etching procedures include treatment with inorganic or organic acids, caustic materials, and the like.
  • the etch-protective layer is resistant to the materials of these treatments and protects the barrier layer from contact with such materials.
  • the following example is a detailed description of certain device of the present invention. The detailed description falls within the scope of, and serves to exemplify, the more generally described devices set forth above. The example is presented for illustrative purposes only, and is not intended as a restriction of the scope of the invention.
  • a polymer substrate was provided with a sputtered A1 2 0 3 layer as barrier layer. This layer was exposed to the etching agent for structuring the metal stack (molybdenum/aluminum/molybdenum).
  • the graph drawn in Fig. 3 shows the decrease of the layer thickness d (in Ang) as function of the etching time t (in minutes).
  • a decrease was found from about 1180 A (118 nm) to about 720 A (72 nm) after 20 min of etching time.
  • This test was repeated with a similar system but wherein on the barrier layer a 50 nm thick Si0 2 etch-protective layer was provided, which was deposited by PECVD (plasma enhanced chemical vapor deposition). Etching did not affect the layer thickness of the A1 2 0 3 layer and after 20 min etching time the layer thickness was unchanged at about 1180 A (dotted line)(see Fig. 3).

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention se rapporte à un dispositif émetteur de lumière comportant un empilement de couches d'un substrat comportant au moins une couche polymère et au moins une couche inorganique formant barrière, une couche anodique, une couche émettant la lumière, une couche cathodique et éventuellement des dérivations métalliques, au moins la couche anodique ou les dérivations métalliques étant configurée(s), caractérisé en ce qu'on a prévu une couche de protection contre la gravure prise en sandwich entre la couche formant barrière et l'anode. L'invention se rapporte également à un empilement comportant des couches de ce type.
PCT/IB2004/052380 2003-11-26 2004-11-11 Dispositif emetteur de lumiere comportant une couche de protection contre la gravure WO2005053053A1 (fr)

Applications Claiming Priority (2)

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EP03104381 2003-11-26
EP03104381.3 2003-11-26

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Cited By (15)

* Cited by examiner, † Cited by third party
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WO2007111763A2 (fr) * 2006-03-20 2007-10-04 General Electric Company Dispositifs opto-électroniques présentant une meilleure efficacité
WO2008029060A2 (fr) * 2006-09-07 2008-03-13 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique.
WO2008059185A2 (fr) * 2006-11-17 2008-05-22 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
WO2008090493A1 (fr) 2007-01-22 2008-07-31 Philips Intellectual Property & Standards Gmbh Dispositif émettant de la lumière
WO2008132655A2 (fr) 2007-04-27 2008-11-06 Koninklijke Philips Electronics N.V. Dispositif photoémetteur à métallisation anodisée
WO2008135898A1 (fr) 2007-05-02 2008-11-13 Philips Intellectual Property & Standards Gmbh Dispositif d'émission de lumière faisant appel à des panneaux oled dans une configuration pliée ou déployée
US8334651B2 (en) 2009-02-05 2012-12-18 Koninklijke Philips Electronics N.V. Electroluminescent device with electrical shunt
US8563967B2 (en) 2007-07-11 2013-10-22 Koninklijke Philips N.V. Organic functional device and manufacturing method therefor
US8593055B2 (en) 2007-11-22 2013-11-26 Saint-Gobain Glass France Substrate bearing an electrode, organic light-emitting device incorporating it, and its manufacture
US8753906B2 (en) 2009-04-02 2014-06-17 Saint-Gobain Glass France Method for manufacturing a structure with a textured surface for an organic light-emitting diode device, and structure with a textured surface
US8786176B2 (en) 2007-12-27 2014-07-22 Saint-Gobain Glass France Substrate for organic light-emitting device, and also organic light-emitting device incorporating it
US8808790B2 (en) 2008-09-25 2014-08-19 Saint-Gobain Glass France Method for manufacturing a submillimetric electrically conductive grid coated with an overgrid
US9108881B2 (en) 2010-01-22 2015-08-18 Saint-Gobain Glass France Glass substrate coated with a high-index layer under an electrode coating, and organic light-emitting device comprising such a substrate
US9114425B2 (en) 2008-09-24 2015-08-25 Saint-Gobain Glass France Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, mask having submillimetric apertures and submillimetric electrically conductive grid
WO2015162367A1 (fr) 2014-04-22 2015-10-29 Saint-Gobain Glass France Electrode supportee transparente pour oled

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Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007111763A3 (fr) * 2006-03-20 2008-02-28 Gen Electric Dispositifs opto-électroniques présentant une meilleure efficacité
WO2007111763A2 (fr) * 2006-03-20 2007-10-04 General Electric Company Dispositifs opto-électroniques présentant une meilleure efficacité
JP2010503166A (ja) * 2006-09-07 2010-01-28 サン−ゴバン グラス フランス 有機発光デバイス用基板、基板の使用法およびを製造プロセス、ならびに有機発光デバイス
WO2008029060A2 (fr) * 2006-09-07 2008-03-13 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique.
WO2008029060A3 (fr) * 2006-09-07 2008-04-24 Saint Gobain Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique.
US8339031B2 (en) 2006-09-07 2012-12-25 Saint-Gobain Glass France Substrate for an organic light-emitting device, use and process for manufacturing this substrate, and organic light-emitting device
EP2381743A1 (fr) * 2006-09-07 2011-10-26 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique
EP2381745A1 (fr) * 2006-09-07 2011-10-26 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique
EP2381744A1 (fr) * 2006-09-07 2011-10-26 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique
EP2062462A2 (fr) * 2006-09-07 2009-05-27 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique.
WO2008059185A2 (fr) * 2006-11-17 2008-05-22 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
CN102941711A (zh) * 2006-11-17 2013-02-27 法国圣-戈班玻璃公司 用于有机发光装置的电极、其酸蚀刻以及包括它的有机发光装置
US9099673B2 (en) 2006-11-17 2015-08-04 Saint-Gobain Glass France Electrode for an organic light-emitting device, acid etching thereof and also organic light-emitting device incorporating it
WO2008059185A3 (fr) * 2006-11-17 2008-07-10 Saint Gobain Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
EP2408269A1 (fr) * 2006-11-17 2012-01-18 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
EP2408268A1 (fr) * 2006-11-17 2012-01-18 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
WO2008090493A1 (fr) 2007-01-22 2008-07-31 Philips Intellectual Property & Standards Gmbh Dispositif émettant de la lumière
US8179036B2 (en) 2007-01-22 2012-05-15 Koninklijke Philips Electronics N.V. Light emitting device with a shunt
WO2008132655A2 (fr) 2007-04-27 2008-11-06 Koninklijke Philips Electronics N.V. Dispositif photoémetteur à métallisation anodisée
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WO2008135898A1 (fr) 2007-05-02 2008-11-13 Philips Intellectual Property & Standards Gmbh Dispositif d'émission de lumière faisant appel à des panneaux oled dans une configuration pliée ou déployée
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US8593055B2 (en) 2007-11-22 2013-11-26 Saint-Gobain Glass France Substrate bearing an electrode, organic light-emitting device incorporating it, and its manufacture
US8786176B2 (en) 2007-12-27 2014-07-22 Saint-Gobain Glass France Substrate for organic light-emitting device, and also organic light-emitting device incorporating it
US9114425B2 (en) 2008-09-24 2015-08-25 Saint-Gobain Glass France Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, mask having submillimetric apertures and submillimetric electrically conductive grid
US8808790B2 (en) 2008-09-25 2014-08-19 Saint-Gobain Glass France Method for manufacturing a submillimetric electrically conductive grid coated with an overgrid
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US8753906B2 (en) 2009-04-02 2014-06-17 Saint-Gobain Glass France Method for manufacturing a structure with a textured surface for an organic light-emitting diode device, and structure with a textured surface
US9108881B2 (en) 2010-01-22 2015-08-18 Saint-Gobain Glass France Glass substrate coated with a high-index layer under an electrode coating, and organic light-emitting device comprising such a substrate
WO2015162367A1 (fr) 2014-04-22 2015-10-29 Saint-Gobain Glass France Electrode supportee transparente pour oled
US10319934B2 (en) 2014-04-22 2019-06-11 Saint-Gobain Glass France Transparent supported electrode for OLED

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