WO2005029189A8 - レジスト用化合物および感放射線性組成物 - Google Patents

レジスト用化合物および感放射線性組成物

Info

Publication number
WO2005029189A8
WO2005029189A8 PCT/JP2004/012879 JP2004012879W WO2005029189A8 WO 2005029189 A8 WO2005029189 A8 WO 2005029189A8 JP 2004012879 W JP2004012879 W JP 2004012879W WO 2005029189 A8 WO2005029189 A8 WO 2005029189A8
Authority
WO
WIPO (PCT)
Prior art keywords
compound
radiation
sensitive composition
resist
composition
Prior art date
Application number
PCT/JP2004/012879
Other languages
English (en)
French (fr)
Other versions
WO2005029189A1 (ja
Inventor
Dai Oguro
Masatoshi Echigo
Original Assignee
Mitsubishi Gas Chemical Co
Dai Oguro
Masatoshi Echigo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co, Dai Oguro, Masatoshi Echigo filed Critical Mitsubishi Gas Chemical Co
Priority to US10/570,855 priority Critical patent/US20070059632A1/en
Priority to EP04772828A priority patent/EP1666970A4/en
Publication of WO2005029189A1 publication Critical patent/WO2005029189A1/ja
Publication of WO2005029189A8 publication Critical patent/WO2005029189A8/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
    • C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D311/78—Ring systems having three or more relevant rings
    • C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
    • C07D311/82—Xanthenes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
PCT/JP2004/012879 2003-09-18 2004-08-30 レジスト用化合物および感放射線性組成物 WO2005029189A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/570,855 US20070059632A1 (en) 2003-09-18 2004-08-30 Method of manufacturing a semiconductor device
EP04772828A EP1666970A4 (en) 2003-09-18 2004-08-30 COMPOSITION FOR RESIST AND RADIATION COMPATIBLE COMPOSITION

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2003326686 2003-09-18
JP2003-326686 2003-09-18
JP2003430459 2003-12-25
JP2003-430459 2003-12-25
JP2004-119889 2004-04-15
JP2004119889 2004-04-15
JP2004138712 2004-05-07
JP2004-138712 2004-05-07

Publications (2)

Publication Number Publication Date
WO2005029189A1 WO2005029189A1 (ja) 2005-03-31
WO2005029189A8 true WO2005029189A8 (ja) 2005-05-12

Family

ID=34382100

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/012879 WO2005029189A1 (ja) 2003-09-18 2004-08-30 レジスト用化合物および感放射線性組成物

Country Status (5)

Country Link
US (1) US20070059632A1 (ja)
EP (1) EP1666970A4 (ja)
KR (1) KR20060071423A (ja)
TW (1) TW200519538A (ja)
WO (1) WO2005029189A1 (ja)

Families Citing this family (29)

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EP1739485B1 (en) * 2004-04-15 2016-08-31 Mitsubishi Gas Chemical Company, Inc. Resist composition
TWI494697B (zh) 2004-12-24 2015-08-01 Mitsubishi Gas Chemical Co 光阻用化合物
JP5138157B2 (ja) * 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) * 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
TW200745010A (en) * 2006-02-17 2007-12-16 Jsr Corp Compound having acid dissociable group and radiation sensitive composition containing the same
JP4929110B2 (ja) * 2007-09-25 2012-05-09 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
JP5172378B2 (ja) * 2008-02-19 2013-03-27 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
DE102008017591A1 (de) * 2008-04-07 2009-10-08 Merck Patent Gmbh Neue Materialien für organische Elektrolumineszenzvorrichtungen
JP5836256B2 (ja) * 2011-11-30 2015-12-24 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び電子デバイスの製造方法
EP2955577B1 (en) * 2013-02-08 2018-01-31 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography, and pattern forming method
US10377734B2 (en) 2013-02-08 2019-08-13 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, polyphenol derivative for use in the composition
CN104981463B (zh) * 2013-02-08 2018-04-13 三菱瓦斯化学株式会社 化合物、光刻用下层膜形成材料、光刻用下层膜及图案形成方法
TWI662018B (zh) 2014-03-13 2019-06-11 日商三菱瓦斯化學股份有限公司 抗蝕組成物及抗蝕圖型形成方法
CN106103396B (zh) 2014-03-13 2021-11-30 三菱瓦斯化学株式会社 化合物、树脂、光刻用下层膜形成材料、光刻用下层膜、图案形成方法、及化合物或树脂的纯化方法
KR20170099908A (ko) * 2014-12-25 2017-09-01 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 리소그래피용 하층막 형성 재료, 리소그래피용 하층막, 패턴 형성방법 및 정제방법
US20180030065A1 (en) * 2015-01-27 2018-02-01 Isi Life Sciences, Inc. Fluorescein polymer conjugates
CN107533290B (zh) 2015-03-30 2021-04-09 三菱瓦斯化学株式会社 抗蚀基材、抗蚀剂组合物及抗蚀图案形成方法
US10747112B2 (en) 2015-03-30 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method
EP3279190B1 (en) * 2015-03-31 2020-08-12 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
CN107533291B (zh) * 2015-03-31 2021-06-11 三菱瓦斯化学株式会社 化合物、抗蚀剂组合物及使用其的抗蚀图案形成方法
US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
WO2017038645A1 (ja) * 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、パターン形成方法、樹脂、並びに精製方法
WO2017043561A1 (ja) * 2015-09-10 2017-03-16 三菱瓦斯化学株式会社 化合物、樹脂、レジスト組成物又は感放射線性組成物、レジストパターン形成方法、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、回路パターンの形成方法、及び、精製方法
JP2017090849A (ja) * 2015-11-17 2017-05-25 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 高耐熱性レジスト組成物およびそれを用いたパターン形成方法
KR101852460B1 (ko) * 2015-12-16 2018-04-26 삼성에스디아이 주식회사 중합체, 유기막 조성물, 및 패턴형성방법
KR20180099681A (ko) * 2015-12-25 2018-09-05 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 조성물, 레지스트 패턴 형성방법, 및, 회로 패턴 형성방법
JP2018154600A (ja) * 2017-03-21 2018-10-04 三菱瓦斯化学株式会社 化合物、樹脂、組成物、パターン形成方法及び精製方法
WO2020131245A1 (en) * 2018-12-18 2020-06-25 Indorama Ventures Oxides Llc Benzhydrylated aromatic surfactants
KR102632885B1 (ko) * 2021-08-19 2024-02-05 이근수 플루오렌계 유기 화합물, 이를 포함하는 유기막 및 응용

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ATE137231T1 (de) * 1990-09-13 1996-05-15 Ocg Microelectronic Materials Säurelabile lösungsinhibitoren und darauf basierende positiv und negativ arbeitende strahlungsempfindliche zusammensetzung
JP3039048B2 (ja) * 1991-11-01 2000-05-08 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
JP3203842B2 (ja) * 1992-11-30 2001-08-27 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH06301210A (ja) * 1993-04-15 1994-10-28 Fuji Photo Film Co Ltd ポジ型感光性組成物
US5447960A (en) * 1993-10-04 1995-09-05 Dowelanco Fungicidal use of phenolic aromatic compounds
EP0886183A1 (en) * 1993-12-17 1998-12-23 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
JP3587325B2 (ja) * 1996-03-08 2004-11-10 富士写真フイルム株式会社 ポジ型感光性組成物
JP2000305270A (ja) * 1999-04-20 2000-11-02 Yasuhiko Shirota 化学増幅型新規低分子系レジスト材料を用いるパターン形成
JP4425405B2 (ja) * 2000-02-04 2010-03-03 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4187934B2 (ja) * 2000-02-18 2008-11-26 富士フイルム株式会社 ポジ型レジスト組成物
JP2002363123A (ja) * 2001-03-29 2002-12-18 Kansai Research Institute 光活性化合物および感光性樹脂組成物
JP4956879B2 (ja) * 2001-08-23 2012-06-20 三菱化学株式会社 エポキシ樹脂とその製造方法及びエポキシ樹脂組成物
JP3750994B2 (ja) * 2001-11-16 2006-03-01 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
JP4484479B2 (ja) * 2002-09-27 2010-06-16 大阪瓦斯株式会社 フルオレン誘導体及び光活性化合物

Also Published As

Publication number Publication date
US20070059632A1 (en) 2007-03-15
EP1666970A1 (en) 2006-06-07
WO2005029189A1 (ja) 2005-03-31
KR20060071423A (ko) 2006-06-26
TW200519538A (en) 2005-06-16
EP1666970A4 (en) 2009-09-02

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