WO2005013382A1 - Dispositif emettant de la lumiere a semi-conducteur - Google Patents

Dispositif emettant de la lumiere a semi-conducteur Download PDF

Info

Publication number
WO2005013382A1
WO2005013382A1 PCT/KR2004/001927 KR2004001927W WO2005013382A1 WO 2005013382 A1 WO2005013382 A1 WO 2005013382A1 KR 2004001927 W KR2004001927 W KR 2004001927W WO 2005013382 A1 WO2005013382 A1 WO 2005013382A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
type
layer
light emitting
emitting device
Prior art date
Application number
PCT/KR2004/001927
Other languages
English (en)
Inventor
Tae Kyung Yoo
Original Assignee
Epivalley Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epivalley Co., Ltd. filed Critical Epivalley Co., Ltd.
Publication of WO2005013382A1 publication Critical patent/WO2005013382A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

Definitions

  • the present invention relates to a GaN-based semiconductor light emitting device having an electrode structure for improving the external quantum efficiency.
  • a transparent conductive film having a given thickness is formed on almost all regions of an upper layer in o rder to effectively diffuse current.
  • the absorption of photons caused by such a transparent conductive film lowers efficiency of a device due to a decrease in external efficiency. Therefore, the transparent conductive film is fabricated as thinly as possible in order to ensure optical transmittance within the range of sufficient current diffusion.
  • a generally used semitransparent conductive film consists of Ni/Au-based materials having a thickness of several tens of angstrom to several hundred angstroms.
  • FIG. 1 shows a cross-sectional view of a conventional LED.
  • a buffer layer 11 a lower n-type AI(x)Ga(y)ln(z)N (where 0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 1) layer 12, an AI(x)Ga(y)ln(z)N (where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 1) active layer 13, and a p-type AI(x)Ga(y)ln(z)N (where 0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 1 ) layer 14 are sequentially formed on a substrate 10.
  • a transparent electrode 15 is formed on the whole or partial surface of the uppermost layer.
  • a first electrode 16 is formed to be in contact with the n-type AI(x)Ga(y)ln(z)N layer 12 by eliminating a part of the p-type AI(x)Ga(y)ln(z)N layer 14, the active layer 13 and the n-type AI(x)Ga(y)ln(z)N layer 12.
  • a second electrode 17 of the Au pad is formed to be in contact with the transparent electrode 15. Thereafter, a transparent i nsulation layer 18 is formed.
  • FIG. 2 shows a plan view of the conventional LED. As illustrated, the Au pad 17 occupies a large amount of area on the transparent electrode 15.
  • FIG. 3 shows the absorption of light emitted from the active layer 13 into the Au pad 17 and the transparent electrode 15. Since the light emitted to the upper side is reflected or absorbed, external quantum efficiency deteriorates abruptly.
  • a semiconductor light emitting device including a substrate, a plurality of semiconductor layers which is formed on the substrate and has an active layer for generating light by a recombination of electrons and holes, a transparent electrode formed on the plurality of semiconductor layers, a p-type pad electrode which is in electrical contact with the transparent electrode, and an n-type electrode formed by etching a part of the plurality of semiconductor layers, the p-type pad electrode is located at the surface of the substrate exposed by etching a part of the plurality of semiconductor layers, and the p-type pad electrode contacts the transparent electrode electrically.
  • the semiconductor light emitting device is a rectangle chip and the p-type and n-type electrodes are formed on a diagonal line of the rectangle chip.
  • the transparent electrode is at least one selected from groups consisting of Ni, Au, Ag, Pt, Cr, Ti, Al, In, and Rh.
  • the p-type electrode is at lest one selected from groups consisting of Ti, Al, Cr, Au, Ni, Ag, Pt, In, and Rh.
  • the semiconductor light emitting device is a rectangle chip, the p-type electrode adjoins one side of the rectangle chip, and the n-type electrode adjoins a side opposite to a side at which the p-type electrode is formed.
  • the semiconductor light emitting device is a rectangle chip
  • the p-type and n-type electrodes are formed on a diagonal line of the rectangle chip
  • the p-type and n-type electrodes have respective electrodes for uniform current diffusion density, and these electrodes are expanded from the p-type and n-type electrodes to sides of the rectangle chip to face each other.
  • the transparent insulation layer is silicon oxide.
  • a thin transparent conductive film is formed on a p-type AI(x)Ga(y)ln(z)N (where 0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 1 ) layer, and a pad for bonding is formed on the transparent conductive film. Therefore, a part of light emitted to an upper layer is reflected or absorbed from or into the bonding pad, thereby lowering external quantum efficiency.
  • a p-type bonding pad which decreases the external quantum efficiency is formed on a sapphire substrate.
  • the external quantum efficiency is greatly increased by maximally ensuring a path of light escaping to the upper layer of the transparent conductive film.
  • I f c hips are separated by eliminating a GaN between the chips and performing a scribing process at a front side, the yield of the chips can remarkably improved.
  • FIG. 1 is a cross-sectional view of a conventional LED
  • FIG. 2 is a plan view of a conventional LED
  • FIG. 3 is a diagram illustrating an optical absorption principle into a p-type pad and a transparent electrode of a conventional LED
  • FIG. 4 is a c ross-sectional view of a n LED according to the present invention
  • FIG. 5 is a plan view of an LED according to the present invention
  • FIG. 6 is a diagram illustrating an LED structure optimizing current diffusion according to the present invention.
  • An LED according to the present invention has a basic structure of a compound semiconductor including a buffer layer 11 , a lower n-type AI(x)Ga(y)ln(z)N (where 0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 1) layer 12, an AI(x)Ga(y)ln(z)N (where 0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 1) active layer 13, and a p-type AI(x)Ga(y)ln(z)N (where 0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 1) layer 14 which are formed on a substrate 10.
  • a transparent electrode 15 is formed on the entire or partial surface of the p-type AI(x)Ga(y)ln(z)N layer 14.
  • the p-type AI(x)Ga(y)ln(z)N layer 14, the active layer 13 and the lower n-type AI(x)Ga(y)ln(z)N layer 12 are partially eliminated to expose the substrate 10.
  • the p-type AI(x)Ga(y)ln(z)N layer 14, the active layer 13 and a part of the lower n-type AI(x)Ga(y)ln(z)N layer 12 are eliminated to expose the n-type AI(x)GA(y)ln(z)N layer 12.
  • a transparent insulation layer 18 is formed on the whole surface except on a part of the exposed substrate, a prat of the exposed n-type AI(x)Ga(y)ln(z) layer and a part of the transparent electrode.
  • a first electrode 17 is formed to connect the exposed substrate to the exposed transparent electrode.
  • a second electrode 16 is formed on the exposed n-type AI(x)Ga(y)ln(z)N layer 12.
  • the p-type bonding pad concerned with the deterioration of external quantum efficiency is formed not on the transparent conductive film but on the sapphire substrate, and only its wiring for electric conduction is formed with a minimum size at the upper surface of the transparent conductive film.
  • the area of the n-type bonding pad is 7850 urn 2 for a circle with a diameter of 100 urn.
  • the area of two wirings each having a width of 5 urn and a length of 100 urn is 1000 urn 2 . Consequently, the ratio of the area occupied b y the p-type wiring out of the effective area of the chip is 1.9 percent.
  • FIG. 6 illustrates a structure in which current density flowing into the n-type electrode 16 from the p-type electrode 17 is uniform by expanding a part of the n-type and p-type electrodes toward facing sides.
  • An additional effect can be obtained by this process. That is, the yield of the chip can be maximized because a scribing process can be performed at a front side by all etching GaN between chips. In a general LED, GaN exists between chips, and the scribing is implemented at a back side to separate chips up to the front side.
  • the present invention since the crystal direction of the sapphire or GaN may not coincide with the scribing direction, the chips are separated from the back side to the front side at a slant. Therefore, in some cases, the chip encroaches on a light emitting part at its front side.
  • the reliability of a device can be remarkably improved by minimizing the stress toward the active layer generated during Au wire bonding on a p-type pad.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne un dispositif émettant de la lumière à semi-conducteur à base de GaN qui comprend un substrat, une pluralité de couches semi-conductrices qui sont formées sur le substrat et qui comporte une couche active servant à générer de la lumière par recombinaison d'électrons et de trous, une électrode transparente formée sur les multiples couches semi-conductrices, une électrode pastille du type p qui se trouve en contact électrique avec l'électrode transparente et une électrode du type n formée sur un endroit par la gravure d'une partie de la multitude de couches semi-conductrices, l'électrode pastille du type p étant située au niveau de la surface du substrat qui est exposée par la gravure d'une partie de la multitude de couches semi-conductrices et l'électrode pastille du type p se trouvant en contact électrique avec l'électrode transparente, ceci améliorant ainsi le rendement quantique externe.
PCT/KR2004/001927 2003-07-30 2004-07-30 Dispositif emettant de la lumiere a semi-conducteur WO2005013382A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0052934 2003-07-30
KR20030052934A KR100601143B1 (ko) 2003-07-30 2003-07-30 반도체 발광 소자

Publications (1)

Publication Number Publication Date
WO2005013382A1 true WO2005013382A1 (fr) 2005-02-10

Family

ID=34114227

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2004/001927 WO2005013382A1 (fr) 2003-07-30 2004-07-30 Dispositif emettant de la lumiere a semi-conducteur

Country Status (2)

Country Link
KR (1) KR100601143B1 (fr)
WO (1) WO2005013382A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009132641A1 (fr) 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Puce à diodes électroluminescentes
CN102169937A (zh) * 2010-02-23 2011-08-31 Lg伊诺特有限公司 发光器件、发光器件封装、制造发光器件的方法及照明系统
US8039860B2 (en) 2010-02-11 2011-10-18 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
WO2012016377A1 (fr) * 2010-08-03 2012-02-09 Industrial Technology Research Institute Puce de diode électroluminescente, structure de boîtier de diode électroluminescente et leur procédé de fabrication
CN103187491A (zh) * 2011-12-29 2013-07-03 财团法人工业技术研究院 晶片级发光二极管结构的制造方法及发光二极管芯片
CN103700735A (zh) * 2012-09-28 2014-04-02 上海蓝光科技有限公司 一种发光二极管及其制造方法
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
WO2016115877A1 (fr) * 2015-01-20 2016-07-28 湘能华磊光电股份有限公司 Dispositif luminescent à semi-conducteur du groupe iii

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101158071B1 (ko) * 2005-09-28 2012-06-22 서울옵토디바이스주식회사 다수의 셀이 결합된 발광 소자 및 이의 제조 방법
DE112006002927B4 (de) 2006-01-09 2010-06-02 Seoul Opto Device Co. Ltd., Ansan Licht emittierende Diode mit ITO-Schicht und Verfahren zur Herstellung einer solchen
KR100758542B1 (ko) * 2006-03-14 2007-09-13 서울옵토디바이스주식회사 Ⅰｔｏ층을 갖는 교류용 발광다이오드 및 그 제조방법
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
TWI531088B (zh) 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
CN102668135B (zh) 2010-06-24 2016-08-17 首尔伟傲世有限公司 发光二极管
KR101158075B1 (ko) * 2010-08-10 2012-06-22 서울옵토디바이스주식회사 분포 브래그 반사기를 갖는 발광 다이오드
DE112011102506B4 (de) 2010-07-28 2021-03-25 Seoul Viosys Co., Ltd. Lichtemittierende Diode und lichtemittierende Diodeneinheit
KR102507444B1 (ko) * 2015-09-04 2023-03-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 디스플레이 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163531A (ja) * 1996-11-26 1998-06-19 Nichia Chem Ind Ltd 周縁に電極を有する発光ダイオード
JPH11168239A (ja) * 1997-12-05 1999-06-22 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JPH11340514A (ja) * 1998-05-22 1999-12-10 Nichia Chem Ind Ltd フリップチップ型光半導体素子
JP2000315819A (ja) * 1999-04-30 2000-11-14 Rohm Co Ltd 半導体発光素子の製法
JP2001007397A (ja) * 1999-06-23 2001-01-12 Nichia Chem Ind Ltd 窒化物半導体光素子及びその形成方法
JP2001044498A (ja) * 1999-07-28 2001-02-16 Nichia Chem Ind Ltd 窒化物半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163531A (ja) * 1996-11-26 1998-06-19 Nichia Chem Ind Ltd 周縁に電極を有する発光ダイオード
JPH11168239A (ja) * 1997-12-05 1999-06-22 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JPH11340514A (ja) * 1998-05-22 1999-12-10 Nichia Chem Ind Ltd フリップチップ型光半導体素子
JP2000315819A (ja) * 1999-04-30 2000-11-14 Rohm Co Ltd 半導体発光素子の製法
JP2001007397A (ja) * 1999-06-23 2001-01-12 Nichia Chem Ind Ltd 窒化物半導体光素子及びその形成方法
JP2001044498A (ja) * 1999-07-28 2001-02-16 Nichia Chem Ind Ltd 窒化物半導体発光素子

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009132641A1 (fr) 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Puce à diodes électroluminescentes
US8530923B2 (en) 2008-04-30 2013-09-10 Osram Opto Semiconductor Gmbh LED chip
EP3032593A1 (fr) * 2008-04-30 2016-06-15 Osram Opto Semiconductors Gmbh Puce de diode électroluminescente
US8039860B2 (en) 2010-02-11 2011-10-18 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
CN102169937A (zh) * 2010-02-23 2011-08-31 Lg伊诺特有限公司 发光器件、发光器件封装、制造发光器件的方法及照明系统
US8395182B2 (en) 2010-02-23 2013-03-12 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, method of manufacturing light emitting device and illumination system
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
WO2012016377A1 (fr) * 2010-08-03 2012-02-09 Industrial Technology Research Institute Puce de diode électroluminescente, structure de boîtier de diode électroluminescente et leur procédé de fabrication
CN103180979A (zh) * 2010-08-03 2013-06-26 财团法人工业技术研究院 发光二极管芯片、发光二极管封装结构、及其形成方法
CN103222073A (zh) * 2010-08-03 2013-07-24 财团法人工业技术研究院 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法
US8759865B2 (en) 2010-08-03 2014-06-24 Industrial Technology Research Institute Light emitting diode chip, light emitting diode package structure, and method for forming the same
CN103187491A (zh) * 2011-12-29 2013-07-03 财团法人工业技术研究院 晶片级发光二极管结构的制造方法及发光二极管芯片
CN103700735A (zh) * 2012-09-28 2014-04-02 上海蓝光科技有限公司 一种发光二极管及其制造方法
WO2016115877A1 (fr) * 2015-01-20 2016-07-28 湘能华磊光电股份有限公司 Dispositif luminescent à semi-conducteur du groupe iii

Also Published As

Publication number Publication date
KR100601143B1 (ko) 2006-07-19
KR20050014343A (ko) 2005-02-07

Similar Documents

Publication Publication Date Title
US6933169B2 (en) Optical semiconductor device
US9318530B2 (en) Wafer level light-emitting diode array and method for manufacturing same
WO2005013382A1 (fr) Dispositif emettant de la lumiere a semi-conducteur
US7038245B2 (en) Semiconductor light emitting device having angled side surface
JP5191837B2 (ja) 半導体発光素子及び半導体発光装置
JP4203132B2 (ja) 発光素子及びその製造方法
JP5404596B2 (ja) 発光素子およびその製造方法
US6936861B2 (en) Nitride-based compound semiconductor light-emitting element and method for producing same
JP4766845B2 (ja) 窒化物系化合物半導体発光素子およびその製造方法
US20070010035A1 (en) Light emitting diode and manufacturing method thereof
US10388690B2 (en) Wafer level light-emitting diode array
JP2005123489A (ja) 窒化物半導体発光素子およびその製造方法
JP4946663B2 (ja) 半導体発光素子
KR20010088929A (ko) AlGaInN계 반도체 LED 소자 및 그 제조 방법
JP2770717B2 (ja) 窒化ガリウム系化合物半導体発光素子
JPH0846280A (ja) 半導体発光装置
CN116207203A (zh) 一种发光二极管芯片
JP2005302803A (ja) 窒化物半導体発光素子およびその製造方法
JP2000049376A (ja) 発光素子
US20140239340A1 (en) Light emitting device, light emitting device package, and method for manufacturing light emitting device
US10784420B2 (en) Semiconductor light emitting device
KR100423185B1 (ko) 질화물반도체 발광소자
JP2011061246A (ja) 窒化物半導体発光素子およびその製造方法
JP2017011016A (ja) 半導体発光装置
JP5372220B2 (ja) 半導体発光素子及び半導体発光装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase