WO2004109777A1 - Procede et dispositif d'exposition, procede de fabrication du dispositif et dispositif - Google Patents

Procede et dispositif d'exposition, procede de fabrication du dispositif et dispositif Download PDF

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Publication number
WO2004109777A1
WO2004109777A1 PCT/JP2004/007092 JP2004007092W WO2004109777A1 WO 2004109777 A1 WO2004109777 A1 WO 2004109777A1 JP 2004007092 W JP2004007092 W JP 2004007092W WO 2004109777 A1 WO2004109777 A1 WO 2004109777A1
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WIPO (PCT)
Prior art keywords
illumination
exposure
pattern
optical system
incident angle
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PCT/JP2004/007092
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English (en)
Japanese (ja)
Inventor
Naomasa Shiraishi
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Nikon Corporation
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Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2005506741A priority Critical patent/JPWO2004109777A1/ja
Publication of WO2004109777A1 publication Critical patent/WO2004109777A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to an exposure technique used in a lithographic process for manufacturing various devices such as a semiconductor integrated circuit, an image sensor, a liquid crystal display, and a thin film magnetic head, and particularly relates to an error due to an optical proximity effect. It is suitable for use to reduce ⁇ PE (Optical Proximity Error). Further, the present invention relates to a device manufacturing technique using the exposure technique and a device manufactured by the device manufacturing technique.
  • ⁇ PE Optical Proximity Error
  • a reticle serving as a mask which is drawn by enlarging a pattern to be formed by about 415 times. , Etc.) on a wafer (or a glass plate or the like) as a substrate to be exposed via a projection optical system, and the pattern is exposed and transferred.
  • the resolution of a projection optical system is approximately the value obtained by dividing the exposure wavelength by the numerical aperture (NA) of the projection optical system.
  • the numerical aperture (NA) of the projection optical system is obtained by multiplying the sine (sin) of the maximum incidence angle of the exposure light beam to the wafer by the refractive index of the medium through which the light beam passes.
  • the exposure wavelength of the projection exposure apparatus has been shortened.
  • the exposure wavelength is mainly 248 nm of KrF excimer laser, but the shorter wavelength of 193 nm of ArF excimer laser is entering the practical stage.
  • a projection exposure apparatus using a so-called vacuum ultraviolet exposure light source such as an F laser having a shorter wavelength of 157 nm and an Ar laser having a wavelength of 126 nm has been proposed.
  • high resolution can be achieved by increasing the numerical aperture (increase in NA) of the projection optical system rather than shortening the wavelength alone. Therefore, development has been made to further increase the NA of the projection optical system.
  • the NA of the current state-of-the-art projection optical system is about 0.8.
  • a spatial frequency modulation type phase shift reticle is particularly effective in reducing both the pattern interval (pitch) and the pattern line width of a pattern to be transferred. It is used when manufacturing high-speed devices such as CPUs (Central Processing Units) that require patterns (for example, see Patent Document 1).
  • CPUs Central Processing Units
  • a projection optical system used in a scanning exposure apparatus generally has a rectangular good image area (exposure field) that is long in one direction and short in a direction orthogonal to the direction.
  • a reflective optical system may be used, but a refractive optical system is generally used up to an exposure wavelength of about 193 nm (ArF excimer laser).
  • the rectangular exposure visual field is defined by a circle passing through the center of the circle as a diagonal line from the circle which is an original good image range of the refractive optical system composed of a combination of circular lenses, and inscribed in the circle.
  • the shape is a rectangle. The reason is that the long side of such a rectangular visual field can be maximized and the efficiency is the highest.
  • the length of the short side of the field of view decreases.
  • the exposure field in this direction can be substantially enlarged. Therefore, in a scanning exposure apparatus, the size of the exposure field that can be exposed on the wafer in one scanning exposure is the product of the length of the long side of the field of view and the scanning distance, and a smaller projection optical system is used. However, it is possible to expose a large-area exposure field.
  • Patent Document 1 Japanese Patent No. 1441789
  • phase shift reticle Although the use of the phase shift reticle as described above is extremely effective in improving the resolution, it is necessary to use illumination light having high spatial coherence in order to sufficiently exhibit its performance. . Spatial coherence is the degree of coherence of the illumination light between two different points, and the smaller the incident angle range of the illumination light, the higher the spatial coherence. Therefore, when a phase shift reticle is used, a so-called ⁇ value, which is a coherence factor of illumination light (a value obtained by dividing ⁇ ( ⁇ ) of illumination light illuminating the reticle by ⁇ ( ⁇ AR) on the reticle side of the projection optical system) Needs to be about 0.3 or less. In the future, in order to respond to further miniaturization of semiconductor integrated circuits, etc., the ⁇ value should be about 0.15 in order to secure the required depth of focus while further improving the resolution. It is said that illumination with illumination light is required.
  • the range of the pattern to be considered in the correction by the OPC is a range in which the illuminating light irradiated on the reticle has coherence. If the ⁇ value of the illuminating light used is about 0.3 at present, the range is a region with a radius of about 0.61 X exposure wavelength / (NAR X 0.3). On the other hand, when the ⁇ value of the illumination light becomes 0.15, the range increases to an area having a radius of about 0.61 X exposure wavelength / (NAR X 0.15). As a result, the pattern area to be considered Since the area of the key is quadrupled, and the OPE also increases quantitatively, the amount of correction by OPC also increases. Therefore, there is a problem that the time required for the optical simulation for the OPC correction is increased, the correction cost is increased, and the reticle cost is increased.
  • the present invention has been made in view of such a problem, and a first object of the present invention is to provide an exposure technique capable of improving an error ( ⁇ PE characteristic) due to an optical proximity effect. I do.
  • the present invention provides an exposure technique capable of improving the OPE characteristics of a spatial frequency modulation type phase shift reticle and preventing a decrease in the depth of focus in a pattern having a predetermined pitch, for example, when a spatial frequency modulation type phase shift reticle is used.
  • Another object of the present invention is to provide a device manufacturing technique capable of manufacturing a high-performance electronic device at low cost by using the above-described exposure technique, and a device capable of being manufactured by the device manufacturing technique.
  • a first exposure method includes irradiating a pattern of a mask (R) with illumination light, and projecting an image of the pattern onto a substrate (W) via a projection optical system (23).
  • At least a part of the pattern of the mask is a pattern (LC, LL1, LR1) having a longitudinal direction in a first direction, and an incident angle range of the illumination light on the mask in the first direction. Is made wider than the incident angle range of the illumination light with respect to the mask in a second direction orthogonal to the first direction.
  • a pattern having a longitudinal direction in the first direction on the mask is provided.
  • the imaging light flux that has passed through the (transfer pattern) is distributed on the pupil plane of the projection optical system in a region that extends in the first direction from the second direction.
  • the numerical aperture in the second direction is substantially larger near the optical axis than in the periphery. Therefore,
  • the image formed on the substrate is obtained by adding (intensityally adding) optical image incoherent with substantially different numerical apertures. Therefore, the spatial coherency of the image on the substrate is reduced by the averaging effect, the fluctuation due to the change in the pitch of the transfer line width is reduced, and the OPE (Optical Proximity Error) characteristic, which is an error due to the optical proximity effect, is reduced. It will be improved.
  • OPE Optical Proximity Error
  • an incident angle range of the illumination light with respect to the mask is set so that an effective ⁇ value in the first direction is different from an effective ⁇ value in the second direction. May be.
  • the incident angle range of the illumination light with respect to the mask is set to an effective ⁇ value of 0.6 or more in the first direction and an effective ⁇ value of 0.3 or less in the second direction. It is desirable to make it larger than 0.
  • the effective ⁇ value of the illumination light on the mask in a predetermined direction is defined as a sine (sin) of a maximum value of an incident angle of the illumination light on the mask in the predetermined direction.
  • the effective ⁇ value of the illumination light is greater in the first direction than in the second direction, if the refractive indices of the media above and below the mask are substantially equal, the angle of incidence in the first direction The range becomes wider than the incident angle range in the second direction.
  • the effective ⁇ value in the second direction to 0.3 or less, high resolution can be obtained in the second direction on the same principle as so-called small ⁇ illumination.
  • the incident angle range of the illumination light with respect to the mask is defined as
  • the effective ⁇ value be 0.7 or more in one direction and the effective ⁇ value be 0.2 or less in the second direction orthogonal to the first direction. As a result, the resolution is further improved, and the ⁇ characteristic is further improved.
  • the pattern of the mask is a spatial frequency modulation type phase shift pattern having a longitudinal direction in the first direction.
  • the ⁇ characteristics can be improved, and a decrease in the depth of focus in a pattern having a predetermined pitch can be prevented.
  • a predetermined intensity distribution adjusting member (1 1) The incident angle range of the illumination light with respect to that is adjusted.
  • the intensity distribution adjusting member is disposed on or near a pupil plane of an illumination optical system (50) that illuminates the mask with the illumination light, and has a rectangular or elliptical opening (12).
  • the illumination system aperture stop (11) provided. Only by setting the shape of the aperture of the illumination aperture stop, the incident angle range of the illumination light in the first direction and the second direction or the effective ⁇ value can be easily set to a desired state.
  • the polarization state of the illumination light be a state mainly composed of linearly polarized light whose electric field direction coincides with the first direction. Thereby, the imaging performance is further improved.
  • the intensity distribution of the illumination light with respect to the mask with respect to the incident angle in the first direction may be weakened in the middle of the incident angle range where both ends of the incident angle range are strong. Thereby, the ⁇ characteristics may be further improved.
  • the intensity distribution at both ends of the incident angle range is 1.5 to 3 times the intensity distribution at the center of the incident angle range.
  • a projection optical system (23) having a rectangular field having a long side in the first direction (X direction) and an illumination optical system (50) having a rectangular illumination field (IAR) having a long side in the first direction are provided.
  • a pattern having a longitudinal direction in the first direction is projected as it is by the projection optical system having the rectangular visual field, and a pattern extending from the illumination visual field in the second direction is subjected to scanning exposure. Projected onto the substrate.
  • the second exposure method of the present invention illuminates a pattern of a mask with illumination light, and projects an image of the pattern onto a substrate (W) via a projection optical system (23).
  • the substrate is exposed by multiple exposure of a first exposure using the first exposure method of the present invention and a second exposure using another exposure method.
  • various patterns can be transferred onto a substrate at high resolution.
  • the exposure apparatus provides an illumination optical system (50) for illuminating the mask (R) with illumination light.
  • a projection optical system (23) for projecting an image of a pattern of the mask onto a substrate (W), the incident angle range of the illumination light with respect to the mask in a first direction on the mask. Is wider than the incident angle range of the illumination light to the mask in the second direction orthogonal to the first direction.
  • the OPE characteristic of the image of the pattern is improved.
  • a spatial frequency modulation type phase shift pattern having a longitudinal direction in the first direction is formed on the mask, the OPE characteristic is improved, and the depth of focus of the pattern having a predetermined pitch is improved. Drop can be prevented.
  • the incident angle range of the illumination light with respect to the mask is set so that the effective ⁇ value in the first direction is different from the effective ⁇ value in the second direction. May be.
  • the incident angle range of the illumination light with respect to the mask is set to an effective ⁇ value of 0.6 or more in the first direction and an effective ⁇ value of 0.3 or less in the second direction. It is desirable to make it larger than 0.
  • the incident angle range in the first direction is wider than that in the second direction.
  • the incident angle range of the illumination light to the mask has an effective ⁇ value of 0.7 or more in the first direction and an effective ⁇ value of 0.7 in the second direction. It is desirable to be 2 or less. As a result, a higher resolution can be obtained, and the ⁇ characteristic can be further improved.
  • an intensity distribution adjusting member (11) for adjusting the incident angle range of the illumination light with respect to the mask is desirable to have an intensity distribution adjusting member (11) for adjusting the incident angle range of the illumination light with respect to the mask.
  • the intensity distribution adjusting member is disposed on or near the pupil plane of the illumination optical system (50) as an example, and an illumination system aperture stop provided with a rectangular or elliptical aperture (12) is provided. (1 1). With the illumination system aperture stop, the incident angle range of the illumination light or the effective ⁇ value can be easily set to a desired state in two orthogonal directions.
  • the illumination optical system changes the polarization state of the illumination light and the electric field direction to the first direction. It is desirable to have a polarization control member (4) that makes linearly polarized light having the same direction as the main component. Thereby, the imaging performance is further improved.
  • the intensity distribution of the illumination light with respect to the mask with respect to the incident angle in the first direction is weakened in the middle of the incident angle range where both ends of the incident angle range are strong. As a result, the PE characteristics may be further improved.
  • the intensity distribution at both ends of the incident angle range is 1.5 to 3 times the intensity distribution at the center of the incident angle range.
  • the illumination optical system has a first illumination condition variable mechanism (10, 11) that makes an incident angle range of the illumination light variable within the conditions of the incident angle range. Further, it is desirable that the illumination optical system has a second illumination condition variable mechanism (10, 11) that further sets the incident angle range of the illumination light outside the incident angle range.
  • the illumination conditions set by the second illumination condition variable mechanism include annular illumination, dipole illumination, or quadrupole illumination.
  • stage mechanism for relatively scanning the mask and the substrate while maintaining the imaging relationship via the projection optical system, and the relative scanning direction is It is desirable that they coincide with the second direction.
  • the exposure field of view of the projection optical system be a rectangular shape having a long side in the first direction.
  • the illumination visual field of the illumination optical system is a rectangular shape having a long side in the first direction.
  • a device manufacturing method includes a step of transferring a device pattern onto a substrate using the exposure method of the present invention.
  • the device of the present invention is a device manufactured by the device manufacturing method of the present invention. According to the present invention, a device having a fine line 'and' space pattern can be manufactured with high accuracy.
  • the range of the incident angle of the illumination light or the effective ⁇ value is determined in two orthogonal directions. Since the conditions are set differently, exposure can be performed while improving the OPE characteristic, which is an error due to the optical proximity effect.
  • a spatial frequency modulation type phase shift reticle when used, its ⁇ PE characteristic can be improved, and a decrease in the depth of focus in a pattern having a predetermined pitch can be prevented.
  • FIG. 1 is a partially cutaway view showing a schematic configuration of a projection exposure apparatus according to an example of an embodiment of the present invention.
  • FIG. 2 is a perspective view schematically showing an optical system from an illumination aperture stop 11 to a reticle R in FIG.
  • FIG. 3 (A) is a plan view showing the illumination aperture stop 1 la of FIG. 2
  • FIG. 3 (B) is a simplified view of the optical system of FIG. 2 viewed in the Y direction
  • FIG. ) Is a simplified view of the optical system of FIG. 2 viewed in the X direction.
  • FIG. 4 (A) is a plan view showing a reticle on which a pattern suitable for exposure by the projection exposure apparatus of this example is drawn
  • FIG. 4 (B) is a view of a field of view when exposed by the projection exposure apparatus.
  • FIG. 4 is a plan view showing a reticle on which a pattern susceptible to the aberration of the projection optical system is drawn at both ends.
  • FIG. 5 (A) is a plan view showing an example of a spatial frequency modulation type phase shift reticle
  • FIG. 5 (B) is an image intensity distribution corresponding to a portion along line AA ′ in FIG. 5 (A). It is a figure showing an example of
  • FIG. 6 (A) is a plan view showing the illumination aperture stop 11a of FIG. 3 (A), and FIG. 6 (B) is a view showing a uniform light amount distribution of an opening 12a in the illumination aperture stop 11a;
  • FIG. 6C is a diagram showing a light amount distribution in which the light amount is larger at the peripheral portion than at the central portion of the opening 12a.
  • FIG. 8 shows the results obtained by performing an optical simulation under the same ⁇ value conditions as in the example of FIG. 7 and using the distribution of FIG. It is a figure showing an example of the result of having calculated the line width PW and DOF (depth of focus).
  • FIG. 9 (A) is a plan view showing the illumination aperture stop 11a of FIG. 3 (A)
  • FIG. 9 (B) is a plan view showing an example of a reticle scale pattern
  • FIG. 9 (C) is a projection optical system.
  • FIG. 14 is a diagram showing a pupil plane PP of the system 23;
  • FIG. 9 is a diagram illustrating an example of a calculation result.
  • FIG. 9 is a diagram illustrating an example of a calculation result.
  • FIG. 12 (A) is a view showing a reticle pattern used for explaining the effect of the embodiment of the present invention
  • FIG. 12 (B) is a resist formed by transferring the pattern of FIG. 12 (A). It is a figure showing a pattern.
  • FIG. 12B is a diagram showing a relationship between the line width of the resist pattern of FIG. 12B and the position in the X direction.
  • FIG. 12B is a diagram showing a relationship between the line width of the resist pattern of FIG. 12B and the position in the X direction.
  • 13B is a diagram showing the relationship between the line width of the resist pattern of FIG. 12B and the position in the X direction when exposure is performed at the best focus position and at the position defocused by 50 nm, respectively, by adopting 0.15.
  • FIG. 16 is a diagram showing an example of a lithographic process for manufacturing a semiconductor device using the projection exposure apparatus of the embodiment of the present invention.
  • This example is a scanning exposure type projection exposure apparatus (scanning exposure apparatus) using a step 'and' scan method.
  • the present invention is applied to the case where the exposure is performed in (1).
  • FIG. 1 is a partially cutaway view showing the projection exposure apparatus of this example.
  • an excimer laser light source such as KrF (wavelength 247 nm) or ArF (wavelength 193 nm) is used as the exposure light source 1.
  • Exposure light sources include an F (fluorine molecule) laser light source (wavelength 157 nm), a Kr laser light source (wavelength 146 nm), an Ar laser light source (wavelength 126 ⁇ m), a YAG laser harmonic generation light source, and a solid-state laser (semiconductor laser, etc.). ), Or a bright line lamp or the like can be used.
  • the illumination light (exposure light) IL for exposure as an exposure beam emitted from the exposure light source 1 at the time of exposure enters the polarization control member 4 via the relay lenses 2 and 3 along the optical axis AX1.
  • the details of the polarization control member 4 will be described later.
  • the illumination light IL emitted from the polarization control member 4 is incident on a first illuminance equalization member 5 as an optical integrator (uniformizer or homogenizer).
  • a fly-eye lens (fly-eye 'integrator) is used as the illuminance uniforming member 5, but instead, a diffractive optical element (DOE: Diifractive) such as an internal reflection type integrator (eg, a so-called glass rod) or a diffraction grating is used. Optical Element) etc. can be used.
  • DOE Diifractive
  • the illumination light IL emitted from the first illuminance equalizing member 5 reaches a mirror 7 for bending the optical path via a relay lens 6.
  • the illumination light IL reflected by the mirror 7 passes through the relay lens 8 along the optical axis AX2 and enters the second illuminance equalizing member 9 as an optical integrator.
  • a fly-eye lens is used as the illuminance uniforming member 9 in this example, an internal reflection type integrator, a diffractive optical element (DOE), or the like can be used instead.
  • An emission aperture stop 11 for variously changing the shape of the aperture of the illumination aperture stop (a so-called ⁇ stop) is provided on the emission-side surface (the emission-side focal plane) of the second illuminance equalization member 9. It is arranged rotatably.
  • the illumination aperture stop 11 as an intensity distribution adjusting member includes an aperture 12 (to be described in detail later) for reducing errors due to the optical proximity effect, a circular aperture (iris stop) having a variable radius, and a ring.
  • An opening 13 composed of a band-shaped stop, a stop for modified illumination (dipole illumination, quadrupole illumination, etc.) having a plurality of openings, and the like is arranged.
  • the illuminating aperture stop 11 is driven by the turret-type exchanging mechanism 10 so that any of the apertures ( ⁇ stop) ) It is configured such that it can be arranged on the exit side surface of the degree uniformizing member 9.
  • an opening 12 is arranged on the emission-side surface of the illuminance equalizing member 9.
  • the illumination aperture stop 11 and the exchange mechanism 10 correspond to the first and second illumination condition variable mechanisms of the present invention.
  • the illumination light IL that has exited the opening 12 passes through the relay lens 14, the illumination field stop 15, and the condenser lens 16 along the optical axis AX2, and enters the mirror 17 for bending the optical path.
  • the illumination light IL reflected by the mirror 17 passes through the condenser lens 18 along the optical axis AX3, and illuminates the rectangular illumination visual field IAR on the pattern surface (lower surface) of the reticle R as a mask with a uniform illuminance distribution. .
  • the relay lenses 2 and 3, the polarization control member 4, the first illuminance equalizing member 5, the relay lenses 6 and 8, the mirrors 7 and 17, the second illuminance uniforming member 9, the aperture 12 (or Other apertures), a relay lens 14, an illumination field stop 15, and condenser lenses 16 and 18 constitute an illumination optical system 50.
  • the optical path bending mirrors 7 and 17 are not essential for optical performance, but if the optical axes AX1, AX2 and AX3 of the illumination optical system 50 are arranged in a straight line, the projection exposure apparatus In order to increase the overall height of the illumination optical system 50, it is arranged at an appropriate position in the illumination optical system 50 for the purpose of saving space.
  • the optical axis AX1 of the illumination optical system 50 is bent by the mirror 7 to become the optical axis AX2, and the optical axis AX2 is bent by the mirror 17 to become the optical axis AX3.
  • the illumination field stop 15 is a fixed field stop that defines the shape of the illumination field IAR on the reticle R.
  • a movable field stop (not shown) is also provided to gradually open and close the illuminated field of view IAR in the scanning direction so that unnecessary parts are not exposed at the beginning and end of each scanning exposure. Have been.
  • the latter movable field stop is also used to limit the illuminated field of view IAR to a non-scanning direction orthogonal to the scanning direction.
  • the pattern in the illumination field IAR of the reticle R is projected, for example, at a projection magnification of / 3 (/ 3 is 1Z4, 1/5, etc.) via the bilateral telecentric projection optical system 23. Then, the image is reduced and projected on an exposure area on one shot area on the wafer W coated with a photoresist as a substrate to be exposed (substrate).
  • the exposure area is elongated and shaped in a non-scanning direction orthogonal to the scanning direction of the wafer W conjugate with the illumination visual field IAR.
  • the reticle R and the wafer W can be regarded as a first object and a second object, respectively.
  • Wafer W is, for example, semiconductor (silicon etc.) Alternatively, it is a disk-shaped substrate such as SII (silicon on insulator) having a diameter of about 200 to 300 mm.
  • the projection optical system 23 of the present example is, for example, a refractive optical system.
  • the Z axis is taken parallel to the optical axis AX4 of the projection optical system 23, and scanning is performed in a plane (XY plane) perpendicular to the Z axis along the running direction of the reticle R and the wafer W during exposure.
  • the explanation is given taking the Y axis and the X axis along the non-traveling direction. In this example, the XY plane is almost horizontal.
  • the optical axis AX4 of the projection optical system 23 matches the optical axis AX3 of the illumination optical system 50 on the reticle R.
  • the reticle R on which the pattern to be exposed and transferred is formed is sucked and held on the reticle stage 20, and the reticle stage 20 moves at a constant speed in the Y direction on the reticle base 19 and corrects a synchronization error.
  • the reticle R by slightly moving it in the X, Y, and Z directions.
  • the position of the reticle stage 20 in the X and Y directions and the rotation angle are measured by a movable mirror 21 and a laser interferometer 22 provided thereon.
  • the reticle stage drive system 52 controls the position and speed of the reticle stage 20 via a drive mechanism (not shown) such as a linear motor.
  • a reticle alignment microscope (not shown) for reticle alignment is arranged above the periphery of the reticle R.
  • the wafer W is held by suction on a wafer stage 24 via a wafer holder (not shown).
  • the wafer stage 24 can move at a constant speed in the Y direction on the wafer base 27 and It is mounted so that it can move stepwise in the Y direction.
  • the wafer stage 24 also incorporates a Z-leveling mechanism for adjusting the surface of the wafer W to the image plane of the projection optical system PL based on the measurement value of an autofocus sensor (not shown). .
  • the position and rotation angle of the wafer stage 24 in the X and Y directions are measured by a moving mirror 25 and a laser interferometer 26 provided thereon.
  • the wafer stage drive system 53 controls the position and speed of the wafer stage 24 via a drive mechanism (not shown) such as a linear motor.
  • a drive mechanism such as a reticle stage 20, a reticle base 19, a wafer stage 24, a wafer base 27, and a linear motor (not shown) corresponds to the stage mechanism of the present invention.
  • an alignment element on the wafer W is provided for wafer alignment.
  • An FIA type alignment sensor is disclosed in, for example, Japanese Patent Application Laid-Open No. 7-183186.
  • the reticle stage 20 and the wafer stage 24 are driven while the illumination field IL on the reticle R is irradiated with the illumination light IL, and the reticle R and the wafer W are driven.
  • the ratio of the running speed between the wafer stage 24 and the reticle stage 20 during the synchronous running is determined by the projection optical system 23 in order to maintain the imaging relationship between the reticle R and the wafer W via the projection optical system 23. Equal to the projection magnification (for example, 1Z4, 1/5, etc.).
  • FIG. 2 is an enlarged view showing members from the illumination aperture stop 11 to the reticle R in the illumination optical system 50 of the projection exposure apparatus shown in FIG.
  • the mirror 17 for bending the optical path in FIG. 1 is omitted, whereby the optical axis AX2 of the illumination optical system 50 in FIG. 1 coincides with the optical axis AX3 and both are parallel to the Z axis.
  • the illumination aperture stop 11, the aperture 12, the relay lens 14, the illumination field stop 15, and the condenser lenses 16 and 18 in FIG. 1 are shown, and in FIG. 2, the illumination aperture stop l la and the aperture 12a are respectively shown.
  • the relay lens 14a, the illumination field stop 15a, and the condenser lenses 16a and 18a are referred to by adding the letter a to the code.
  • the configuration and function of the member in FIG. 1 and the corresponding member in FIG. 2 (and the members after FIG. 3) are the same.
  • the projection exposure apparatus of the present example uses a force that causes the reticle R to move in the Y direction during scanning exposure, the field of view of the projection optical system 23 in FIG. It is desirable that the visual field IAR be a rectangle having a long side in the X direction (non-scanning direction). Therefore, the shape of the opening 15b of the illumination field stop 15a is also a rectangle having a long side in the X direction. This opening Illumination power transmitted through section 15b Irradiates into rectangular illumination field of view IAR on reticle R via condenser lenses 16a and 18a.
  • the shape of the opening 12a on the illumination aperture stop 11a is also a rectangle having a long side in the X direction (non-scanning direction) as shown in FIG.
  • the emission-side surface of the second illuminance equalizing member 9 in FIG. 1 is at or near the position that becomes the Fourier transform surface of the pattern surface of the reticle R via the relay lens 14a and the condenser lenses 16a and 18a in FIG. Placed in The Fourier transform plane for the reticle R in the illumination optical system is the incident light flux force S on the reticle R of the illumination light passing through a position at a predetermined distance D from the optical axis within that plane, and becomes approximately parallel light flux. Is the plane of incidence at an incident angle ⁇ that satisfies the relationship, and generally corresponds to the plane called the pupil plane of the illumination optical system.
  • f is the combined focal length of the relay lens 14a and the condenser lenses 16a and 18a.
  • the illumination aperture stop 11a is disposed on the exit side surface of the second illuminance equalization member 9 in FIG. 1, that is, on the Fourier transform plane (pupil plane) for the reticle R in the illumination optical system 50 or in the vicinity thereof.
  • the incident angle range of the light beam transmitted through the opening 12a having a long side in the X direction to the reticle R is large in the X direction and small in the Y direction.
  • FIG. 3 is a diagram showing a relationship between the illumination aperture stop 11a shown in FIG. 2 and an incident angle range of the illumination light IL1 (corresponding to the illumination light IL in FIG. 1) to the reticle R.
  • the relay lens 14a and the condenser lenses 16a, 18a in FIG. One of the condenser lenses displayed as 180.
  • the distance between the virtual condenser lens 180 and the illumination aperture stop 11a and the distance between the condenser lens 180 and the reticle R are equal to the focal length f of the condenser lens 180, respectively. Equivalent to the combined focal length with 6a and 18a.
  • FIG. 3 (A) is a plan view of the illumination aperture stop 11a.
  • the illumination aperture stop 1 la has a light-shielding substrate centered on the optical axis AX3 in the X direction.
  • a rectangular opening 12a having a long side in the X direction (in this example, the non-scanning direction) having a half width of Sx and a half width in the Y direction of Sy is formed.
  • the illumination aperture stop 11a has another opening (not shown). .
  • the illumination light IL1 transmitted through the opening 12a is incident on the reticle R with a predetermined incident angle range by the condenser lens 180 shown in FIGS. 3 (B) and 3 (C).
  • the incident angle range of the illumination light IL1 to the reticle R is as follows: the X direction is the angle range of the earth ⁇ X centered on the direction of the optical axis AX3 as shown in FIG. 3 (B), and the Y direction is as shown in FIG. As shown in (C), the angle range of the earth is around the direction of the optical axis AX3. The following relationship holds between the size (half width Sx, Sy) of the opening 12a of the illumination aperture stop 11a and the range of the angle of incidence of the illumination light IL1 on the reticle R.
  • the range of the incident angle of the illumination light on the reticle R is generally represented by a coherence factor (a so-called ⁇ value).
  • ⁇ value is the value obtained by dividing the numerical aperture ( ⁇ ) of the illumination light for illuminating the reticle by the numerical aperture (NAR) on the reticle side of the projection optical system as follows.
  • the numerical aperture (NAI) of the illuminating light for illuminating the reticle is defined as the sine of the maximum incident angle of the illuminating light on the reticle (this is ⁇ ), and the refraction of the medium above the reticle. Multiplied by the rate na.
  • NAI na X sm ⁇
  • NAR nb X sin 0
  • the medium above and below the reticle is a gas, and the refractive indices na and nb can be considered to be substantially 1.
  • the refractive index of the medium above and below the reticle R a gas such as air, nitrogen gas, or a rare gas (such as helium gas) in this example
  • the shape of the opening on the illumination aperture stop 11a is generally a circle having a predetermined radius R.
  • the incident angle range of the illumination light transmitted through the circle to the reticle is an angle ⁇ that satisfies the following equation in both the X and Y directions.
  • the projection optical system 23 of the present example is rotationally symmetric, and has the same numerical aperture in the X and Y directions. At this time, the X direction and the Y direction of the present example correspond to the first direction and the second direction of the present invention, respectively, and the following equation is established.
  • ⁇ x sm ⁇ x / sm ⁇
  • ⁇ y sm ⁇ ⁇ / sm ⁇
  • the incident angle range (earth ⁇ X) of the illuminating light with respect to the reticle R in the X direction (first direction) is set to the reticle angle R in the Y direction (second direction). It is desirable to make it wider than the incident angle range of the illuminating light (Soil ⁇ ). That is, in the projection exposure apparatus of this example, it is desirable to set the value of ⁇ X to be larger than the value of ⁇ y. New More specifically, in this example, it is preferable that the value of ⁇ ⁇ be about 0.6 or more and the value of ⁇ ⁇ be about 0.3 or less and larger than 0. More preferably, in this example, o (Di O.7 or more is about 7 or more, and the value is about 0.2 or less.
  • the incident angle range of the illumination light IL1 to the reticle R is set to such a condition, that is, in the case of the illumination condition of the present example, the optical proximity which has been a problem in the conventional small ⁇ illumination has The improvement of the increase in OPE (Optical Proximity Error), which is an error due to the effect, and the improvement of the depth of focus in a pattern of a specific pitch will be described using optical simulation results.
  • OPE Optical Proximity Error
  • FIG. 5A is a plan view showing a reticle pattern used in the following simulation.
  • line patterns LC, LL1, LL2, LR1, LR2 are arranged on a transparent reticle substrate RP at a period (pitch) PT in the Y direction. Te, ru.
  • the XY coordinates in FIG. 5A are the same as the coordinates shown in FIGS.
  • the longitudinal direction of each of the line patterns LC, LL1, LL2, LR1, and LR2 coincides with the X direction, and the line width in the short Y direction is WD.
  • light-shielding patterns CL and CR are arranged at intervals (inter-spacings) SP, respectively.
  • phase shift parts PS1, PS2, PS3 force S are formed every other, and the transmitted light of that part is formed.
  • a so-called spatial frequency modulation type phase shift pattern (spatial frequency modulation type phase shift reticle) in which the phase is shifted by 180 ° with respect to the transmitted light from another reticle substrate RP is formed.
  • the phase shift sections PS 1, PS 2, PS 3 are formed, for example, by excavating the reticle substrate RP by etching.
  • the exposure wavelength is 193 nm
  • the numerical aperture NA on the wafer side of the projection optical system is 0.92
  • each dimension of the reticle pattern in FIG. 5A is the projection magnification / 3
  • the line width WD is 50 nm
  • the distance SP is 140 nm
  • the width of the light-shielding patterns CR and CL in the Y direction is 10 ⁇ m
  • the length of each pattern in the X direction is calculated in consideration of the reduction ratio.
  • the height was set to 10 zm.
  • the pitch PT of the line patterns LC, LL1, LL2, LR1, and LR2 was made variable to evaluate the PE characteristics and the depth of focus at each pitch.
  • the illumination light IL1 is used in the direction of the electric field to improve the imaging performance.
  • FIG. 5 (B) shows a projection image generated when the reticle pattern shown in FIG. 5 (A) is projected on a wafer by using the projection exposure apparatus of this embodiment, and is represented by AA ′ in FIG. 5 (A).
  • the intensity distribution Img at the part corresponding to the line is obtained by optical simulation.
  • the line width at which the line pattern LC at the center in Fig. 5 (A) is transferred onto the wafer is determined by the part (dark area IC) of the image intensity distribution Img corresponding to the line pattern LC, and the predetermined slice level SL. Can be calculated as the slice width PW when binarized.
  • the intensity distribution Img of the optical image when the pitch PT of the line pattern LC etc. is 600 nm is first calculated under each illumination condition, and the slice level SL where the slice width PW of the dark portion IC of the image is 35 nm is 35 nm. Ask for.
  • the pitch PT is made variable, the image intensity distribution Img at each pitch PT is calculated, and the line width PW of the transfer pattern is obtained from the slice width of the partial IC of each image at the slice level SL. This determines the relationship between the line width PW of the transfer pattern and the pattern pitch PT.
  • D ⁇ F depth of focus
  • the relationship between D ⁇ F and pitch PT was obtained by changing the pitch PT of the line pattern LC and the like, calculating the depth of focus at each pitch PT.
  • Calculation of D ⁇ F I applied the ED-Tree method.
  • the ED-Tree method is disclosed, for example, in Reference 2 “Burn J. Lin et al .: Metnods to Print Optical Images at Low_k ⁇ Factors, SPIE Vol. 1264, pp. 2-13, (1990)”. .
  • the target line width was set to 35 nm, and the assumed error was set to an allowable line width error of ⁇ 2.8 nm and an exposure error of ⁇ 2.5%.
  • the patterns are assumed to have a line width WD of 53 nm assuming a manufacturing error of +3 nm for the reticle line width, and a pattern of 47 nm assuming a manufacturing error of ⁇ 3 nm for the reticle line width. A common depth of focus was determined.
  • FIG. 7 the results will be described with reference to FIGS. 7, 10, and 11.
  • the change in (vertical axis) is large. To 10.5 nm.
  • the line width WD of the pattern on the reticle R that cancels this line width change is corrected (the method of correcting by increasing or decreasing the line width itself of the pattern on the reticle).
  • Proximity Correction the method of correcting by increasing or decreasing the line width itself of the pattern on the reticle.
  • a relatively large ⁇ PE is generated even in a large pitch pattern with a pitch power of about 460 nm. This indicates that it is necessary to consider a large range of patterns centered on a predetermined pattern (a range extending to a radius of 60 Onm or more on the wafer) around the predetermined pattern in the above OPC. The number of data to be processed and the processing time further increase.
  • D ⁇ ⁇ ⁇ ⁇ F decreases due to the increase in the illumination ⁇ value, and as shown in FIG. 11 (B), for a pattern with a pitch PT of 260 nm or less, the DOF falls below 150 nm, Transferring a fine pitch pattern becomes extremely difficult.
  • the OPE characteristics are as shown in Fig. 7 (A), and when the pitch PT is in the range of 250 nm to 600 nm.
  • the change width of the transfer line width PW is 5.5 nm, which is as good as that of the conventional example shown in FIG.
  • the reduction in the transfer line width PW is large in a fine pitch pattern with a pitch 200 of about 200 nm or less.
  • the pitch ⁇ ⁇ ⁇ is 140 nm—6 nm as shown in FIG.
  • the incident angle range is not limited to this value. That is, if the illumination light has an ay force of 3 or less and a ⁇ power of SO.6 or more, it is possible to obtain the effect of the present invention of achieving both good OPE characteristics and good depth of focus. Also, the pitch PT of the reticle pattern to be exposed is finer. In some cases, the use of illumination light having a ⁇ power of SO.2 or less and a ⁇ power of 0.7 or more enables the above effects to be more excellently exhibited.
  • FIG. 9A is a diagram showing the illumination aperture stop 11a shown in FIG. 3A.
  • This illumination light is applied almost perpendicularly to a reticle R having a pattern ⁇ ⁇ ⁇ having a longitudinal direction in the X direction and a periodicity in the ⁇ direction shown in FIG. 9B, and diffracted in the ⁇ direction from the pattern ⁇ . Light is generated.
  • FIG. 9 shows a diagram showing the illumination aperture stop 11a shown in FIG. 3A.
  • the diffracted light spreads and spreads in the ⁇ direction like distributions DIFPC and DIFMC on the pupil plane of the projection optical system 23.
  • the range of the distribution is limited by the radius of the pupil plane ⁇ , that is, ⁇ of the projection optical system 23.
  • the illumination light existing in the peripheral portion ES located at a position away from the optical axis AX3 by ST on the right side in FIG. 9A is in the X direction with respect to the reticle pattern PM. Incline at an angle.
  • diffracted light from the reticle pattern PM is also generated inclined in the X direction, and the diffracted light DIFPE and DIFME are transmitted from the optical axis AX4 on the pupil plane PP of the projection optical system 23 in FIG. 9C.
  • Only ST will be distributed in the X direction.
  • the distribution in the Y direction is limited by the effective numerical aperture NAb, which is smaller than the radius (ie, NA) of the pupil plane PP.
  • the image of the reticle pattern PM formed by the illumination light emitted from the central part CS and the peripheral part ES of the opening 12a is formed by the power illumination light exposed on the wafer W, as described above.
  • the effective numerical apertures are formed by different optical systems. Then, since the optical images with the different numerical apertures are added incoherently (strongly added) on the wafer W, the spatial coherency of the image on the wafer W is reduced by the averaging effect, and the image is transferred. Variation of line width PW due to change in pitch PT is reduced, and PE characteristics are improved. To improve.
  • the reduction in the depth of focus at a specific pitch which is caused by the conventional small ⁇ illumination, occurs when the pitch becomes a predetermined multiple (for example, about 1.5 times) of the exposure wavelength / ⁇ . This is a phenomenon that occurs. Therefore, in the superposition exposure using light beams having substantially different numerical apertures caused by the illumination conditions of this example, the adverse effect at the predetermined pitch is improved by averaging, and the deterioration of the depth of focus at the predetermined pitch is improved. become.
  • the fine pattern arranged on the reticle is irradiated with the illumination light within the optimum incident angle range, thereby exposing the pattern with good ⁇ characteristics. It becomes possible. In addition, it is possible to prevent a decrease in the depth of focus in a pattern having a specific pitch, which has been a problem in the conventional small-sigma illumination. Exposure with depth can be performed.
  • the above-mentioned averaging by light beams having substantially different numerical apertures is not considered by the illumination light generated from the central part CS and the peripheral part ES in FIG. Needless to say, the illumination is continuously performed by the illumination light generated from the position. This averaging is also performed by illumination light generated from a portion (a portion in the X direction) on the left side of the optical axis # 3 in the opening 12a.
  • the value of the effective numerical aperture NAb in the Y direction does not change linearly with respect to the position ST in the X direction of the peripheral portion ES.
  • the change in the numerical aperture NAb slows down and its value remains close to NA.
  • the light flux whose effective numerical aperture in the Y direction is NA (the X direction in the opening 12a)
  • the degree of contribution of the luminous flux distributed near the optical axis AX3 becomes large, and the averaging effect by the illuminating luminous flux generated from the peripheral position ES in the X direction of the opening 12a may not be sufficiently exhibited.
  • FIG. 6A is a diagram showing the illumination aperture stop 11a and the aperture 12a
  • FIGS. 6B and 6C show the intensity distribution in the X direction of the illumination light transmitted through the aperture 12a.
  • FIG. 6A is a diagram showing the illumination aperture stop 11a and the aperture 12a
  • FIGS. 6B and 6C show the intensity distribution in the X direction of the illumination light transmitted through the aperture 12a.
  • the uniform light amount distribution Dstl shown in FIG. 6 (B) was used.
  • the light intensity distribution Dst2 shown in FIG. 6 (C) is a distribution in which the distribution intensity of the light intensity distribution at the central part in the X direction is half of the light intensity distribution density at the peripheral parts (both ends) in the X direction. As can be seen, a further averaging effect can be expected.
  • FIG. 8 (A) is a graph showing ⁇ PE characteristics
  • FIG. 8 (B) is a graph showing DOF.
  • the variation in the transfer line width PW when changing to a pattern pitch PT force of 250 nm to 600 nm was 4.5 nm, and the OPE characteristics were further improved from those shown in Fig. 7 (A). Have been.
  • the illumination light intensity distribution (distribution density) in the illumination light flux transmitted through the opening 12a should be emphasized to about twice the size near both ends in the X direction and near the center in the X direction.
  • the OPE characteristics of the transferred pattern can be further improved.
  • Such an intensity distribution of the illumination light on the opening 12a can be generated by partially changing the transmittance of the opening 12a. Specifically, a light-absorbing thin film made of a metal such as chromium or a dielectric is formed on a transparent substrate such as glass or quartz by changing its thickness according to the position. It is possible to manufacture the openings 12a having a strong intensity distribution. Note that the distribution density ratio of about twice as described above is not necessarily limited to this. If the distribution density is about 1.5 to 13 times, it is more favorable than when the distribution in the X direction is uniform. OPE characteristics can still be obtained.
  • the averaging is performed by illuminating the reticle R with illumination light having a wide range of incident angles in the X direction, so that the shape of the opening 12a is rectangular.
  • the opening 12a shown in FIG. 3 (A) may be an ellipse whose longer axis matches the X direction and whose shorter axis matches the Y direction instead of the rectangle shown in FIG. 3 (A).
  • 1/2 (half width) of the major axis of the ellipse is Sx and 1/2 (half width) of the minor axis is Sy.
  • the width in the Y direction is wide at the center and narrow at the periphery in the X direction, so that the intensity distribution of the illumination light on the elliptical aperture stop in the Y direction
  • the integrated value at is large at the center in the X direction and small at the periphery. This is opposite to the more preferable distribution shown in FIG. 6 (C), and is a distribution in which the averaging effect according to the present example is hardly generated. Therefore, when an elliptical opening is used, it is desirable to further enhance the illumination light amount distribution per unit area in the opening in the peripheral portion in the X direction.
  • the illumination light is discretely distributed in the X direction, a part of the light is distributed near the optical axis AX3 and the other illumination light is distributed at the end in the X direction.
  • the averaging of the present example is performed by those illuminating lights, so that the effect of the present invention can be obtained.
  • ⁇ ⁇ , ay is defined based on the sine of the maximum value of the incident angle in the X direction when the illumination light distributed at the end in the X direction is incident on the reticle R, and
  • the effects of the present invention can be obtained by satisfying the conditions of the example, 0 ⁇ 0.3 and ⁇ 0.6. Further, if 0 ⁇ 0.2 and ⁇ 0.7, the above-mentioned effect can be achieved more favorably.
  • the opening 12 and the openings having different transmittance distributions are provided on the illumination aperture stop 11 in FIG.
  • turret type according to the pattern on the reticle R to be exposed. Exposure can be performed while exchanging by an exchange mechanism 10 such as an exchange mechanism.
  • an exchange mechanism 10 such as an exchange mechanism.
  • a plurality of openings 12, 13 and the like having different shapes can be provided on the illumination aperture stop 11. The shape of each of these openings is a rectangle as shown in FIG. 3 (A), and those with different lengths Sx and Sy on each side are arranged, and the pattern on the reticle R to be exposed is They can be used interchangeably as needed.
  • the optical path space between the projection optical system 23 and the wafer W is filled with a gas such as air, nitrogen gas, or a rare gas (such as helium gas).
  • a configuration in which this portion is filled with a liquid such as water may be adopted.
  • immersion type exposure apparatus is disclosed, for example, in International Publication No. 99Z49504. In this case, since the wavelength of the exposure light applied to the wafer W is substantially reduced by the refractive index of the liquid, the resolution of the projection optical system 23 is improved.
  • the shape of the aperture of the pupil plane PP of the projection optical system 23 is, for example, two points separated in the ⁇ X direction and two points separated in the soil Y direction with respect to the optical axis AX4, for a total of four points. If the squares are the vertices, the effective numerical aperture NAb in the Y direction decreases linearly with the distance ST. Therefore, if such a projection optical system 23 is adopted, it is possible to exert a good averaging effect in the same manner as described above, even if the illumination light amount distribution on the opening 12a is uniform in the X direction. . In order to set the shape of the opening of the pupil plane PP in this way, a stop having such a (square) opening may be mounted on the pupil plane of the projection optical system 23.
  • the stop be a variable stop rather than a fixed stop. This can be realized, for example, by arranging four variable aperture blades corresponding to each side of the above-mentioned square so as to be movable radially around the optical axis AX4 of the projection optical system 23. it can.
  • the projection exposure apparatus of this example may expose a reticle other than the spatial frequency modulation type phase shift reticle shown in FIG. 5 (A).
  • Circular aperture for normal illumination ⁇ value of about 0.1-0.9, or annular aperture for annular illumination, and aperture corresponding to dipole and quadrupole illumination suitable for exposure It is preferable to arrange the parts and replace them according to the reticle R to be exposed, so that they can be used.
  • the setting of the incident angle range of the illumination light IL1 to the reticle R cannot be made only by the shape of the opening 12 (or 12a) on the illumination aperture stop 11 (or 11a). Les ,. That is, if the intensity distribution itself of the illumination light on the exit side surface of the second illuminance uniformizing member 9 in FIG. 1 can be made into the above-mentioned desired shape, the incident angle range of the illumination light IL1 to the reticle R can be set to the desired range. In this case, the illumination aperture stop 11a and the opening 12 need not be used.
  • a predetermined diffraction grating may be used as the first illuminance uniforming member 5 in FIG.
  • the diffraction pattern formed on the diffraction grating has a periodicity and a directionality such that the diffracted light generated therefrom is distributed in the above-described predetermined shape on the incident surface of the second illuminance equalizing member 9.
  • a phase grating as the diffraction grating in order to suppress the generation of 0th-order diffracted light (straight light).
  • a number of such diffraction gratings can be installed at the position of the first illuminance equalizing member 5 in Fig. 1 and can be interchangeably installed at the position of the optical axis AX1 of the illumination optical system 50. It is also possible to perform the exposure by exchanging the diffraction grating according to the pattern on the reticle R to be exposed. At this time, each of these diffraction gratings includes one that realizes at least one of the illumination conditions of the present example in which ⁇ X is 0.3 or less and ⁇ X is 0.6 or more, as well as ordinary illumination and annular zones. It is desirable to include lighting, dipole and quadrupole lighting, respectively.
  • the shape of the intensity distribution of the illumination light formed on the exit side surface of the second illuminance equalizing member 9 that is, at or near the pupil plane of the illumination optical system 50, that is, to the reticle R of the illumination light can be made variable with more degrees of freedom.
  • a force that uses a fly-eye lens as the second illuminance equalizing member 9 is used as the second illuminance uniforming member 9, for example, a so-called glass rod as an internal reflection type integrator. (Rod integrator) can also be used.
  • This glass rod enters the illuminating light from one surface into a rectangular parallelepiped made of a transmissive material such as glass, quartz, and quartz, and reflects the internal reflection on the other surface (side surface) when exiting from the opposing surface. It is an optical member that makes uniform the intensity distribution of illumination light on the exit surface by using it. Therefore, when a glass rod is used as the second illuminance uniformizing member 9, the exit surface of the glass port is arranged on a conjugate plane with respect to the pattern surface of the reticle R.
  • a pupil plane in an illumination optical system that relays the glass rod and the reticle R is placed on the pupil plane.
  • an aperture stop having an opening having a shape similar to that shown in FIG.
  • An aperture may be provided.
  • the illumination optical system from the exposure light source to the glass rod in the vicinity of the glass rod incident surface, diffraction having a predetermined periodicity and directionality in the vicinity of the conjugate surface with respect to the incident surface of the glass rod.
  • the grating By arranging the grating, it is possible to set the range of the angle of incidence of the illumination light on the reticle R within a predetermined range.
  • the exposure light source A polyhedral prism or a conical prism can be installed at any position in the illumination optical system up to the rod, so that the range of the angle of incidence of the illumination light on the reticle R can be set to a predetermined range.
  • a combination of the diffraction grating or prism and the aperture stop is used.
  • the setting of the range of the angle of incidence of the illumination light to the reticle R is not limited. In the case where the above-described diffraction grating or prism is used without using the illumination aperture stop, the boundary of the angle range of the illumination light beam incident on the reticle R tends to be slightly blurred.
  • ⁇ X and ⁇ y corresponding to the incident angle range of the illumination light to the reticle R which is a feature of this example, is as follows: ⁇ ⁇ is the illumination angle of the illumination light to the reticle R in the X direction The sine of the angle at half the full width at half maximum (FWHM) of the density function of the light intensity distribution is divided by the numerical aperture NAR on the reticle side of the projection optical system 23, and ay is the Y direction of the illumination light to the reticle R.
  • FWHM full width at half maximum
  • the effective ⁇ X and the effective ⁇ y satisfy the conditions of the present example, ⁇ ⁇ 0.6 and 0 ⁇ ⁇ 0.3.
  • the imaging performance for a pattern having a finer pitch is further improved.
  • the incident angle range of the illumination light in the X direction on the reticle patterns LC, LLI, LL2, LR1, LR2, etc. as shown in FIG. Since it expands to 0.6, the coherence (spatial coherence) in the X direction of the illumination light applied to the reticle R is reduced to the conventional small ⁇ illumination with ⁇ of about 0.15-0.3. Compared to this, it is significantly reduced.
  • the use of the illumination conditions of the present invention improves the uniformity of the line width in the X direction of the transferred image of the pattern formed on the reticle R and having the longitudinal direction in the X direction onto the wafer W. There is also an effect. This effect is obtained by reducing the coherence in the X direction of the illumination light applied to the reticle, which is an effect achieved by the present invention. Hereinafter, this effect will be described with reference to FIGS.
  • FIG. 12A is a diagram showing a reticle pattern used in a computer simulation described below.
  • the reticle R is covered with a light-shielding film RP 2 such as chrome, in which six transmission patterns GL2, SL1, GL1, SRI and GL2 whose longitudinal directions coincide with the X direction are included.
  • GR1, SR2 force S formed and level.
  • the transmission patterns GL2, SL1, GL1, SRI, GR1, and SR2 the three transmission patterns SL1, SRI, and SRf and the phases of the transmitted light from the patterns are arranged adjacent to them.
  • a spatial frequency modulation type phase shift reticle pattern which is shifted by 180 ° with respect to the phase of the transmitted light of GL2, GL1 and GR1.
  • Fig. 12 (A) the fountain component XOf or the transmission node. Represents the center position of the turn GL2, SL1, GL1, SRI, GR1, SR2 in the X direction.
  • FIG. 12 (B) is a diagram showing a resist pattern RS formed when the pattern force is exposed and transferred onto the wafer W in FIG. 12 (A).
  • the photoresist on the wafer W is of a positive type (the exposed and exposed portions are dissolved by development). Therefore, on the wafer W, portions corresponding to the six transmission patterns GL2, SL1, GL1, SR1, GR1 and SR2 on the reticle R are respectively removed from the portions VL3, VL2, VL1 where the resist is removed. , VR1, VR2, VR3 are formed. Then, a resist pattern is formed between the respective portions.
  • FIG. 7 is a diagram illustrating a relationship between an axis (X) and a position XI (horizontal axis) in an X direction.
  • the position XI being 0 corresponds to the center position ⁇ 0 in the X direction.
  • FIG. 13 (A) shows the result at the best focus position
  • FIG. 13 (B) shows the result at the 50 nm defocused position.
  • the other conditions of the optical simulation and the method of calculating the line width to be transferred are the same as those in the above-described optical simulation.
  • the illumination light on reticle R has high coherence in both the X and ⁇ directions, so it can be more accurately determined by the position in the X direction on the reticle pattern.
  • the line width to be transferred varies greatly accordingly.
  • the range of fluctuation is about 4 nm when XI is in the range of 400 nm with zero force.
  • the line width of the transferred pattern fluctuates along the longitudinal direction (here, the X direction), for example, when the pattern is a gate pattern of the M ⁇ S transistor, the line width becomes A thinner part causes a short circuit in the transistor (increase in off-current), and a thicker part causes disconnection in the transistor (decrease in on-current). As a result, the performance of the transistor formed by these methods is reduced. [0113] To prevent this, the line width change in the X direction is predicted in advance, and the line width WD2 of the reticle pattern itself is changed according to the position in the X direction in order to correct the change. That is, OPC (Optical Proximity Correction) is required. And this OPC correction also increases the reticle manufacturing cost.
  • OPC Optical Proximity Correction
  • Fig. 14 (A) shows the results at the best focus position
  • the variation width of the line width PW1 with respect to the change of the position XI in the X direction is reduced, and is about 2.5 nm in the range of XI from 0 to 400 nm.
  • FIG. 15A shows the result at the best focus position
  • FIG. 15B shows the result at the 50 nm defocused position.
  • the ⁇ value ( ⁇ ⁇ ) in the X direction of the illumination light is as large as 0.6 or more, or even 0.7 or more. Low interference. Therefore, the fluctuation width of the line width PW1 with respect to the change of the position XI in the X direction is greatly reduced, and the force of X1 is within about 2 nm in the range of 400 nm.
  • the change in the line width of the transferred pattern relative to the change in the longitudinal position (the position in the X direction) of the gate is slight.
  • the performance of the manufactured transistor can be improved.
  • the case where the illumination method of the present invention is adopted Does not require reticle OPC correction. Therefore, in this case, it is possible to realize an exposure method having high resolution and a sufficient depth of focus for a pattern having an arbitrary pitch without increasing the reticle manufacturing cost at all.
  • the illuminating light to the reticle R is polarized in the same direction as that of the electric field.
  • the polarization control member 4 is an optical member for this purpose, and controls the polarization state of the illumination light applied to the reticle R.
  • the polarization control member 4 a member that converts (rotates) the polarization direction of the linearly polarized light to a desired direction may be used. That is, a half-wave plate made of an optical material having birefringence, such as quartz (silicon dioxide crystal) or magnesium fluoride crystal, is set to be rotatable around the optical axis AX1 of the illumination optical system 50. This can be achieved.
  • the polarization direction of the illumination light illuminating the reticle R is controlled by setting the rotation angle of the half-wave plate.
  • the exposure light source 1 emits a light beam other than linearly polarized light such as a lamp or a randomly polarized laser
  • a polarization filter or a polarization beam splitter that transmits only linearly polarized light in a predetermined direction is used as the polarization control member 4.
  • most of the illumination light intensity for example, about 80% or more
  • the polarization selectivity of the polarizing filter or the polarizing beam splitter is about 80% or more.
  • the polarization control member 4 of the projection exposure apparatus of this example was detachable.
  • the exposure light source 1 in FIG. 1 is a laser light source that emits a light beam of substantially linear polarization
  • two 1/4 wavelength plates arranged in series along the optical axis AX1 are used as the polarization control member 4. By using them and individually rotating them around the optical axis AX1 as the center of rotation, the emitted light can be made linearly polarized light or circularly polarized light (substantially non-polarized light).
  • the longitudinal direction of the pattern on the reticle R to be exposed coincides with the predetermined one direction (the X direction in the above embodiment) as described above. Is preferred. Therefore, when a large number of patterns exist on the reticle R, the directionality of each pattern is unified with respect to a pattern (for example, a gate pattern of a transistor) in which the imaging characteristics are particularly important. It is desirable to make the longitudinal direction coincide with the predetermined one direction.
  • FIGS. 4A and 4B are plan views each showing an example of a reticle on which an original pattern suitable for exposure by the projection exposure apparatus of this embodiment is drawn.
  • FIG. 4A is a diagram showing a reticle R1 in which patterns PHC, PHE1 and PHE2 whose longitudinal directions are all parallel to the X direction are formed in a pattern area PA1.
  • a force S including a pattern other than this, and other patterns are omitted because they are not patterns in which imaging characteristics are particularly important.
  • the projection exposure apparatus of this example is a scanning type exposure apparatus, and its scanning direction (the scanning direction of the reticle R and the wafer W) is the Y direction, so that the exposure field of the projection optical system 23 of FIG. (And the illumination visual field of the illumination optical system 50)
  • the IAR is a rectangle whose long side direction coincides with the X direction (non-scanning direction). Therefore, the longitudinal directions of the patterns PHC, PHE1, and PHE2 are parallel to the longitudinal direction of the exposure field IAR of the projection optical system 23, and are orthogonal to the scanning direction.
  • the reticle R1 is scanned in the Y direction with respect to the exposure field (illumination field) IAR, other patterns existing inside the pattern area PA1 and outside the exposure field IAR at the positions shown in the figure are also projected. It goes without saying that the wafer W is exposed through the optical system 23.
  • FIG. 4 (B) is a diagram showing a reticle R2 in which pattern PVC, PVE1, PVE2 whose longitudinal directions are all parallel to the Y direction are formed in the pattern area PA2.
  • Retic A force S including a pattern other than the above, and other patterns are not described on the nose R2 because the imaging characteristics are not particularly important, and thus the description is omitted.
  • the patterns P VC, PVE 1, and PVE 2 on the reticle R 2 are different from the pattern in FIG. 4A, and the longitudinal direction is orthogonal to the longitudinal direction of the exposure field IAR of the projection optical system 23 and parallel to the scanning direction. .
  • an aberration that degrades the imaging characteristic remains in the optical system.
  • residual aberration is extremely small as compared with an optical system for another use, but it is inevitable that a certain amount of aberration remains. Further, the residual amount of aberration generally increases in the periphery compared to the center of the exposure field of the projection optical system.
  • These residual aberrations include a component that blurs the transferred image in the radial direction from the optical axis of the projection optical system to the periphery (radial direction component), and a component that blurs the concentric direction around the optical axis of the projection optical system. (Concentric component), but the radial component is generally larger.
  • the aberration components in the radial direction are coma and chromatic aberration of magnification. Coma is difficult to correct, both in terms of design and manufacturing errors, and it is difficult to completely eliminate it.
  • the patterns PVE1 and PVE2 having the longitudinal direction in the Y direction near both ends in the X direction of the exposure field IAR in FIG. 4B are most susceptible to the aberration of the projection optical system. It becomes a pattern. Therefore, the transferred images of these patterns on the wafer W are highly likely to cause fluctuations in the transfer line width and poor resolution. The performance of the manufactured LSI is likely to be degraded, and the yield is likely to be reduced. Les ,.
  • the fine pattern force on the reticle R to be exposed is arranged so that its longitudinal direction coincides with the long side direction (X direction) of the exposure field IAR of the projection optical system 23.
  • the fine pattern force on the reticle R to be exposed is assumed to be arranged perpendicular to the running direction (Y direction) of the reticle R. It is desirable to set the incident angle range of the above-mentioned illumination light suitable for imaging of the tickle pattern.
  • the scanning exposure apparatus has been described.
  • the exposure apparatus to which the illumination conditions of the present invention can be applied is not limited to the scanning type.
  • the present invention is also applicable to a stepper type (a type in which a reticle R and a wafer W are exposed while being stationary).
  • the projection field of view of the projection optical system is a square or a rectangle with a ratio of the long side length to the short side length close to 1: 1.
  • the X direction and the ⁇ direction assumed when defining ⁇ ⁇ 0.6, 0 and ⁇ ⁇ 0.3, etc., as the illumination conditions of the present example are the same as those of the entire reticle R
  • the direction does not have to have a predetermined relationship with respect to the external shape.
  • the longitudinal direction of the pattern arranged on the reticle R and the projection optical system will be the same as when using a stepper type exposure apparatus. Since there is no longer a particularly desirable relationship with the shape of the exposure field of the system, the X and ⁇ directions used in defining the illumination conditions in this example are relative to the entire exposure apparatus, the scanning direction, and the outer shape of the reticle R. Therefore, the direction does not have to have a predetermined relationship.
  • the above-described exposure method is particularly suitable for exposure of a spatial frequency modulation type phase shift reticle.
  • the parts of the gate pattern that require high resolution are exposed using a spatial frequency modulation type phase shift reticle, and other parts such as wiring parts are exposed.
  • double exposure is used, which usually uses a reticle (binary reticle) for exposure.
  • double exposure can also be employed in the present invention. That is, the wafer W to be exposed is exposed using the spatial frequency modulation type phase shift reticle under the illumination conditions of the present invention, and then the reticle is replaced using a reticle exchange mechanism (not shown). Normally, the same wafer W may be subjected to overlay exposure by replacing the wafer with a reticule. At this time, when exposing the normal reticle, the illumination conditions It is desirable to change from normal lighting to transit band lighting or dipole and quadrupole illumination.
  • FIG. 16 shows an example of a semiconductor device manufacturing process.
  • a wafer W is manufactured from a silicon semiconductor or the like.
  • a photoresist is applied on the wafer W (step S10), and in the next step S12, a reticle (tentatively R1) is loaded on the reticle stage of the projection exposure apparatus of the above embodiment (FIG. 1).
  • the pattern (represented by the symbol A) of the reticle R1 is transferred (exposed) to all the shot areas SE on the wafer W by the scanning exposure method.
  • double exposure is performed as necessary.
  • the wafer W is, for example, a wafer having a diameter of 300 mm (12-inch wafer).
  • the size of the shot area SE is, for example, a rectangular area having a width of 25 mm in the non-scan direction and a width of 33 mm in the scan direction.
  • a predetermined pattern is formed in each shot region SE of the wafer W by performing development, etching, ion implantation, and the like.
  • step S16 a photoresist is applied on the wafer W, and then in step S18, a reticle (tentatively R2) is placed on the reticle stage of the projection exposure apparatus of the above embodiment (FIG. 1). ) Is loaded and the pattern (represented by the symbol B) of the reticle R2 is transferred (exposed) to each shot area SE on the wafer W by a scanning exposure method. Then, in step S20, a predetermined pattern is formed in each shot area of the wafer W by performing development, etching, ion implantation, and the like of the wafer W.
  • Step S16-Step S20 The above-described exposure process-pattern forming process (Step S16-Step S20) is repeated as many times as necessary to manufacture a desired semiconductor device. Then, through a dicing process (Step S22) for separating each chip CP on the wafer W one by one, a bonding process and a packaging process (Step S24), the semiconductor device SP as a product is obtained. Is manufactured.
  • the device manufacturing method of this example since the exposure is performed under the illumination conditions of the above-described embodiment, the cost of the reticle required for manufacturing the semiconductor integrated circuit and the cost of the circuit design can be reduced. S can. Further, it becomes possible to manufacture a highly integrated semiconductor integrated circuit with a higher yield than before. And, due to the above effects, the device manufacturing method of this example Then, a highly integrated and high-performance semiconductor integrated circuit can be manufactured at low cost.
  • the projection exposure apparatus of the above embodiment includes an illumination optical system composed of a plurality of lenses and a projection optical system incorporated in the exposure apparatus main body, performs optical adjustment, and includes many mechanical parts. It can be manufactured by attaching the reticle stage and wafer stage to the exposure apparatus main body, connecting wiring and piping, and then performing comprehensive adjustments (electrical adjustment, operation confirmation, etc.). It is desirable that the exposure apparatus be manufactured in a clean room in which temperature, cleanliness, etc. are controlled.
  • the application of the exposure apparatus of the present invention is not limited to an exposure apparatus for manufacturing semiconductor devices.
  • a liquid crystal display element formed on a square glass plate or a display apparatus such as a plasma display It can be widely applied to an exposure apparatus for manufacturing various devices such as an exposure apparatus for imaging, an imaging device (CCD, etc.), a micro machine, a thin film magnetic head, and a DNA chip.
  • the present invention can be applied to an exposure step (exposure apparatus) when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithographic process. it can.
  • the magnification of the projection optical system is not limited to a reduction system, and may be any one of an equal magnification and an enlargement system.
  • the projection optical system may use either a refractive optical system consisting of only a lens member or a catadioptric optical system consisting of both a lens member and a reflective member. it can.
  • the configuration of the phase shift pattern in which it is preferable to employ a reflection type reticle, forms a step on the reticle surface and forms a phase difference by a phase difference generated in reflected light due to the step. It can be a method.
  • a high-performance device can be manufactured at low cost.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé et un dispositif d'exposition, dont la caractéristique OPE (erreur de proximité optique), une erreur causée par l'effet de proximité optique, est améliorée en utilisant, par exemple, un réticule de décalage de phase de modulation de fréquence spatiale. Sur un réticule (R), un motif, dont la longueur est dans la direction X, est formé dans la direction Y par des pas prédéterminés. Sur le réticule (R), une zone d'éclairage (IAR) est éclairée, sa longueur étant dans la direction X. L'ouverture (12a) de l'arrêt (11a) d'ouverture d'éclairage d'un système optique d'éclairage est un rectangle dont la longueur est dans la direction X. Ainsi, la lumière éclairant la zone d'éclairage (IAR) a une valeur effective σ supérieure à 0.6 dans la direction X et inférieure à 0.3 dans la direction Y. Durant l'exposition, le réticule (R) et une plaquette sont balayées dans la direction Y relativement à un système optique de projection.
PCT/JP2004/007092 2003-06-03 2004-05-25 Procede et dispositif d'exposition, procede de fabrication du dispositif et dispositif WO2004109777A1 (fr)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032401A1 (de) * 2004-07-03 2005-09-29 Infineon Technologies Ag Projektionsbelichtungseinrichtung, Illuminatorgeometrie, Hybridmaske und Verfahren zu deren Einsatz
JP2006267997A (ja) * 2005-02-25 2006-10-05 Nikon Corp マスク基板、フォトマスク、露光方法、露光装置の管理方法、及びデバイス製造方法
JP2006302953A (ja) * 2005-04-15 2006-11-02 Nec Electronics Corp 半導体集積回路装置の製造方法
JP2007158313A (ja) * 2005-11-10 2007-06-21 Asml Netherlands Bv 光学システム、リソグラフィ装置および投影方法
JP2007293271A (ja) * 2006-02-06 2007-11-08 Asml Holding Nv 開口数を変化させる光学系
CN1892418B (zh) * 2005-07-01 2010-06-09 联华电子股份有限公司 检验相移光掩模的相移角的方法、光刻工艺与相移光掩模
TWI638225B (zh) * 2017-08-09 2018-10-11 華邦電子股份有限公司 光罩及半導體裝置的形成方法
WO2023282208A1 (fr) * 2021-07-05 2023-01-12 株式会社ニコン Appareil d'exposition à des motifs, procédé de fabrication de dispositif et appareil d'exposition

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04204737A (ja) * 1990-11-30 1992-07-27 Hitachi Ltd マスク及び投影露光装置並びにパタン形成方法
JPH05304076A (ja) * 1992-02-26 1993-11-16 Nikon Corp 投影露光装置
JPH08330212A (ja) * 1995-05-31 1996-12-13 Nikon Corp 露光装置
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
JPH1020236A (ja) * 1996-07-09 1998-01-23 Canon Inc 照明光学系及び露光装置
JP2000021722A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光方法及び露光装置
JP2001126983A (ja) * 1999-09-29 2001-05-11 Asm Lithography Bv リソグラフィー方法および装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04204737A (ja) * 1990-11-30 1992-07-27 Hitachi Ltd マスク及び投影露光装置並びにパタン形成方法
JPH05304076A (ja) * 1992-02-26 1993-11-16 Nikon Corp 投影露光装置
JPH08330212A (ja) * 1995-05-31 1996-12-13 Nikon Corp 露光装置
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
JPH1020236A (ja) * 1996-07-09 1998-01-23 Canon Inc 照明光学系及び露光装置
JP2000021722A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光方法及び露光装置
JP2001126983A (ja) * 1999-09-29 2001-05-11 Asm Lithography Bv リソグラフィー方法および装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032401A1 (de) * 2004-07-03 2005-09-29 Infineon Technologies Ag Projektionsbelichtungseinrichtung, Illuminatorgeometrie, Hybridmaske und Verfahren zu deren Einsatz
JP2006267997A (ja) * 2005-02-25 2006-10-05 Nikon Corp マスク基板、フォトマスク、露光方法、露光装置の管理方法、及びデバイス製造方法
JP4692745B2 (ja) * 2005-02-25 2011-06-01 株式会社ニコン マスク基板、フォトマスク、露光方法、露光装置の管理方法、及びデバイス製造方法
JP2006302953A (ja) * 2005-04-15 2006-11-02 Nec Electronics Corp 半導体集積回路装置の製造方法
CN1892418B (zh) * 2005-07-01 2010-06-09 联华电子股份有限公司 检验相移光掩模的相移角的方法、光刻工艺与相移光掩模
JP2007158313A (ja) * 2005-11-10 2007-06-21 Asml Netherlands Bv 光学システム、リソグラフィ装置および投影方法
JP2007293271A (ja) * 2006-02-06 2007-11-08 Asml Holding Nv 開口数を変化させる光学系
JP4551415B2 (ja) * 2006-02-06 2010-09-29 エーエスエムエル ホールディング エヌ．ブイ． 開口数を変化させる光学系
TWI638225B (zh) * 2017-08-09 2018-10-11 華邦電子股份有限公司 光罩及半導體裝置的形成方法
WO2023282208A1 (fr) * 2021-07-05 2023-01-12 株式会社ニコン Appareil d'exposition à des motifs, procédé de fabrication de dispositif et appareil d'exposition

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