TWI278912B - Exposure method and device, and device manufacturing method - Google Patents

Exposure method and device, and device manufacturing method Download PDF

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Publication number
TWI278912B
TWI278912B TW092130385A TW92130385A TWI278912B TW I278912 B TWI278912 B TW I278912B TW 092130385 A TW092130385 A TW 092130385A TW 92130385 A TW92130385 A TW 92130385A TW I278912 B TWI278912 B TW I278912B
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TW
Taiwan
Prior art keywords
reticle
illumination
whose length
optical system
exposure
Prior art date
Application number
TW092130385A
Other languages
English (en)
Other versions
TW200428481A (en
Inventor
Naomasa Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200428481A publication Critical patent/TW200428481A/zh
Application granted granted Critical
Publication of TWI278912B publication Critical patent/TWI278912B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

101年06月04日替換頁 偏光控制構件。 •—種曝光裝置 光學系統，與將該光罩 糸統’其特徵在於： ’係具有以照光來照明光罩之照明 之圖案像轉印至基板上之投影光學 該光罩上楚1 ^ 第1方向之該照明光對該光罩之入射角度辜 圍’見於在與該第1方 门正又之第2方向之該照明光對自 光罩之入射角度範圍； 具有用來調整該昭明氺钭兮土 s 夫*對6亥先罩之人射角度範圍的劳
度分佈調整構件； 該強度分佈調整構侔，在 王稱件係配置在以該照明光來照明驾 光罩之照明光學系统 ^ 子乐，·元之先曈面上、或此附近，設有長方开 或橢圓狀開口之照明系統孔徑光闌； / -亥月光學系統，具有將該照明光之偏光狀態，設茨 成以其電場方向與設於該照明系統孔徑光闌之開口之長道 方向致之直線偏光為主成分偏光控制構件。 6 · 一種曝光裝置，係具有以照光來照明光罩之照明
光學系統’與將該光罩之圖案像轉印至基板上之投影光學 糸統’其特徵在於： 該光罩上第丨方向之該照明光對該光罩之入射角度範 圍’寬於在與該第i方向正交之第2方向之該照明光對該 光罩之入射角度範圍； 該照明光對該光罩之該第工方向之入射角度之強度分 佈，係在入射角度範圍之兩端部強，而在入射角度範圍之 中間部弱； 59 1278912 - ••’ 101年06月04日替換頁 在入射角度範圍兩端部之強度分佈，係在該入射角度 範圍中間部之強度分佈的1.5倍至3倍。 拾壹、圖式： 如次頁
60
TW092130385A 2003-06-03 2003-10-31 Exposure method and device, and device manufacturing method TWI278912B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003158732 2003-06-03

Publications (2)

Publication Number Publication Date
TW200428481A TW200428481A (en) 2004-12-16
TWI278912B true TWI278912B (en) 2007-04-11

Family

ID=33508490

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092130385A TWI278912B (en) 2003-06-03 2003-10-31 Exposure method and device, and device manufacturing method

Country Status (3)

Country Link
JP (1) JPWO2004109777A1 (zh)
TW (1) TWI278912B (zh)
WO (1) WO2004109777A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032401A1 (de) * 2004-07-03 2005-09-29 Infineon Technologies Ag Projektionsbelichtungseinrichtung, Illuminatorgeometrie, Hybridmaske und Verfahren zu deren Einsatz
JP4692745B2 (ja) * 2005-02-25 2011-06-01 株式会社ニコン マスク基板、フォトマスク、露光方法、露光装置の管理方法、及びデバイス製造方法
JP2006302953A (ja) * 2005-04-15 2006-11-02 Nec Electronics Corp 半導体集積回路装置の製造方法
CN1892418B (zh) * 2005-07-01 2010-06-09 联华电子股份有限公司 检验相移光掩模的相移角的方法、光刻工艺与相移光掩模
US20070103789A1 (en) * 2005-11-10 2007-05-10 Asml Netherlands B.V. Optical system, lithographic apparatus and method for projecting
US7532403B2 (en) * 2006-02-06 2009-05-12 Asml Holding N.V. Optical system for transforming numerical aperture
TWI638225B (zh) * 2017-08-09 2018-10-11 華邦電子股份有限公司 光罩及半導體裝置的形成方法
CN117616338A (zh) * 2021-07-05 2024-02-27 株式会社尼康 图案曝光装置、器件制造方法及曝光装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04204737A (ja) * 1990-11-30 1992-07-27 Hitachi Ltd マスク及び投影露光装置並びにパタン形成方法
JP3277589B2 (ja) * 1992-02-26 2002-04-22 株式会社ニコン 投影露光装置及び方法
JPH08330212A (ja) * 1995-05-31 1996-12-13 Nikon Corp 露光装置
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
JP3796294B2 (ja) * 1996-07-09 2006-07-12 キヤノン株式会社 照明光学系及び露光装置
JP3647272B2 (ja) * 1998-06-30 2005-05-11 キヤノン株式会社 露光方法及び露光装置
TW587199B (en) * 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus

Also Published As

Publication number Publication date
JPWO2004109777A1 (ja) 2006-07-20
WO2004109777A1 (ja) 2004-12-16
TW200428481A (en) 2004-12-16

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