WO2004077574A3 - Halbleiterspeicherzelle und verfahren zu deren herstellung - Google Patents

Halbleiterspeicherzelle und verfahren zu deren herstellung Download PDF

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Publication number
WO2004077574A3
WO2004077574A3 PCT/DE2004/000365 DE2004000365W WO2004077574A3 WO 2004077574 A3 WO2004077574 A3 WO 2004077574A3 DE 2004000365 W DE2004000365 W DE 2004000365W WO 2004077574 A3 WO2004077574 A3 WO 2004077574A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
cell
gox
ferroelectric
producing
Prior art date
Application number
PCT/DE2004/000365
Other languages
English (en)
French (fr)
Other versions
WO2004077574A2 (de
Inventor
Cay-Uwe Pinnow
Thomas Mikolajick
Original Assignee
Infineon Technologies Ag
Cay-Uwe Pinnow
Thomas Mikolajick
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Cay-Uwe Pinnow, Thomas Mikolajick filed Critical Infineon Technologies Ag
Publication of WO2004077574A2 publication Critical patent/WO2004077574A2/de
Publication of WO2004077574A3 publication Critical patent/WO2004077574A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties

Abstract

Es werden eine Halbleiterspeicherzelle und ein Verfahren zu deren Herstellung vorgeschlagen, bei welchen die Kapazität (CFe) einer ferroelektrischen Kondensatoranordnung, welche gebildet wird von dem Kontakt und/oder dem Bereich eines im Wesentlichen konstanten Potenzials zwischen einem Gateisolatiosbereich (GOX) und einem Ferroelektrikumsbereich (16), dem Ferroelektrikumsbereich (16) und einer oberen Gateelektrode (18), relativ zu herkömmlichen Verhältnissen und/oder relativ zur Kapazität (CGOX) einer Gateisolationskondensatoranordnung, welche gebildet wird von der Grenzfläche zwischen einem Kanalbereich (K) und dem Gateisolationsbereich (GOX), dem Gateisolationsbereich (GOX) und dem Kontakt und/oder dem Bereich eines im Wesentlichen konstanten Potenzials zwischen einem Gateisolatiosbereich (GOX) und dem Ferroelektrikumsbereich (16), reduziert ausgebildet ist oder wird.
PCT/DE2004/000365 2003-02-28 2004-02-27 Halbleiterspeicherzelle und verfahren zu deren herstellung WO2004077574A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10308970.5 2003-02-28
DE10308970A DE10308970A1 (de) 2003-02-28 2003-02-28 Halbleiterspeicherzelle und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
WO2004077574A2 WO2004077574A2 (de) 2004-09-10
WO2004077574A3 true WO2004077574A3 (de) 2004-11-18

Family

ID=32842060

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/000365 WO2004077574A2 (de) 2003-02-28 2004-02-27 Halbleiterspeicherzelle und verfahren zu deren herstellung

Country Status (2)

Country Link
DE (1) DE10308970A1 (de)
WO (1) WO2004077574A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11335702B1 (en) * 2020-11-13 2022-05-17 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131792A (ja) * 1997-07-14 1999-02-02 Oki Electric Ind Co Ltd 半導体記憶素子およびその製造方法
WO2001024272A1 (de) * 1999-09-28 2001-04-05 Infineon Technologies Ag Ferroelektrischer transistor
EP1246254A2 (de) * 2001-03-28 2002-10-02 Sharp Kabushiki Kaisha MFOS-Speicher-Transistor und diesbezügliches Herstellungsverfahren
EP1302978A2 (de) * 2001-10-16 2003-04-16 Sharp Kabushiki Kaisha Herstellungsverfahren eines selbstjustierten ferrroelektrischen Speichertransistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384729A (en) * 1991-10-28 1995-01-24 Rohm Co., Ltd. Semiconductor storage device having ferroelectric film
JP3136045B2 (ja) * 1994-04-28 2001-02-19 沖電気工業株式会社 メモリセルトランジスタ
JP3281839B2 (ja) * 1997-06-16 2002-05-13 三洋電機株式会社 誘電体メモリおよびその製造方法
JPH11330275A (ja) * 1998-05-18 1999-11-30 Sony Corp 半導体装置およびその製造方法
EP1220318A4 (de) * 1999-09-30 2007-06-06 Rohm Co Ltd Nichtflüchtiger speicher
US6420742B1 (en) * 2000-06-16 2002-07-16 Micron Technology, Inc. Ferroelectric memory transistor with high-k gate insulator and method of fabrication
JP3627640B2 (ja) * 2000-09-22 2005-03-09 松下電器産業株式会社 半導体メモリ素子
JP2002110932A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
US6602720B2 (en) * 2001-03-28 2003-08-05 Sharp Laboratories Of America, Inc. Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131792A (ja) * 1997-07-14 1999-02-02 Oki Electric Ind Co Ltd 半導体記憶素子およびその製造方法
WO2001024272A1 (de) * 1999-09-28 2001-04-05 Infineon Technologies Ag Ferroelektrischer transistor
EP1246254A2 (de) * 2001-03-28 2002-10-02 Sharp Kabushiki Kaisha MFOS-Speicher-Transistor und diesbezügliches Herstellungsverfahren
EP1302978A2 (de) * 2001-10-16 2003-04-16 Sharp Kabushiki Kaisha Herstellungsverfahren eines selbstjustierten ferrroelektrischen Speichertransistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 05 31 May 1999 (1999-05-31) *

Also Published As

Publication number Publication date
WO2004077574A2 (de) 2004-09-10
DE10308970A1 (de) 2004-09-09

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