WO2004066455A2 - Systeme d'eclairage par projection equipe d'un dispositif d'eclairage - Google Patents

Systeme d'eclairage par projection equipe d'un dispositif d'eclairage Download PDF

Info

Publication number
WO2004066455A2
WO2004066455A2 PCT/EP2004/000330 EP2004000330W WO2004066455A2 WO 2004066455 A2 WO2004066455 A2 WO 2004066455A2 EP 2004000330 W EP2004000330 W EP 2004000330W WO 2004066455 A2 WO2004066455 A2 WO 2004066455A2
Authority
WO
WIPO (PCT)
Prior art keywords
gas flow
purge gas
monitoring
light source
projection
Prior art date
Application number
PCT/EP2004/000330
Other languages
German (de)
English (en)
Other versions
WO2004066455A3 (fr
Inventor
Otto Hahnemann
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Publication of WO2004066455A2 publication Critical patent/WO2004066455A2/fr
Publication of WO2004066455A3 publication Critical patent/WO2004066455A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Definitions

  • the invention relates to a projection exposure system with an illumination system with a light source, in particular a UV light-emitting laser, with a projection objective, with a reticle plane in which a reticle is arranged, with a wafer plane in which a wafer is arranged, with a purging gas system for purging the interior of the projection lens and / or the outer areas, in particular the reticle level and the wafer level, and with at least one device for monitoring at least one purging gas flow, which, when the purging gas flow falls below a predetermined amount, emits the radiation from the light source to the Projection lens interrupts, the device for monitoring the purge gas flow being connected to the light source via a control device.
  • a light source in particular a UV light-emitting laser
  • a projection exposure system of this type is known, for example, from EP 1 143 491 AI. Since UV light in particular when irradiated leads to impurities in the air leading to deposits on the optical elements in the projection exposure system, for example in conjunction with antireflection layers for salt formation, which leads to severe impairments and ultimately to a failure of the projection exposure system. For this reason, it must be ensured that such deposits are avoided. This is achieved through one or more purge gas systems. Since the projection lens itself is the most vulnerable part of the system, it is known to completely rinse its interior. For this purpose, purging gas is supplied at one point via corresponding supply lines and at another, from the inlet device removed the purge gas in such a way that the entire interior or at least the area in which optical elements are located is purged.
  • EP 1 143 491 A1 which monitors the purging gas flow and which interrupts the radiation from the light source to the projection lens when the purging gas flow rate falls below a predetermined value.
  • the present invention is therefore based on the object of a projection exposure system with a purge gas system the type mentioned at the beginning, which is provided with a device for monitoring the purge gas flow in order to be able to interrupt the radiation from the light source if necessary, to further improve it, in particular for practical operation, for example with regard to expenditure, to optimize it even more.
  • control device is provided with a time switch device.
  • the at least one device according to the invention for monitoring the purge gas flow creates a monitoring system in this way, which ensures that the projection exposure system is switched more or less without function by interrupting the radiation from the light source. In this way, despite failure or impairment of the purge gas, the projection exposure system continues to operate and can cause deposits on the optical elements which are removed only in a complicated manner is avoided, can '.
  • the purging gas flow or flows can be monitored in a variety of ways.
  • One possibility for this is, for example, the use of sensors that measure the purge gas flow rate or the pressure of the purge gas.
  • sensors that measure the purge gas flow rate or the pressure of the purge gas.
  • mass flow meters or pressure drop detection devices such as pressure sensors are suitable for this.
  • Such sensors can be used to forward changes in the purge gas flow rate to a control device which, when the value falls below the predetermined value, sends a switch-off signal to the lighting system with the light source.
  • a control device which, when the value falls below the predetermined value, sends a switch-off signal to the lighting system with the light source.
  • a warning signal e.g. an optical or acoustic warning device is activated in order to give the operating or maintenance personnel the opportunity to complete an exposure that has begun on the wafer. Only then is the shutter inserted into the beam path with a time delay.
  • a shutter can be introduced into the beam path at any point in the beam path, as a result of which the further beam path to the endangered optical elements is interrupted.
  • the laser is only switched off in a second step if it should emerge that the purging gas flow is not just a brief interruption or that it cannot be remedied within a short time.
  • the single figure shows a basic illustration of a projection exposure system for microlithography, which can be used for the exposure of structures on wafers coated with photosensitive materials.
  • a projection exposure system 1 for microlithography serves for the exposure of structures on a substrate coated with photosensitive materials, which generally consists predominantly of silicon and is referred to as wafer 2, for the production of semiconductor components, such as e.g. Computer chips.
  • the projection exposure system 1 essentially consists of an illumination device 3, a device 4 for receiving and precisely positioning a mask provided with a lattice-like structure, a so-called reticle 5, by means of which the later structures on the wafer 2 are determined, and a device 6 for holding , Movement and exact positioning of this wafer 2 and an imaging device, namely a projection lens 7 with a plurality of optical elements, such as lenses 8, which are mounted via sockets 9 in a lens housing 10 of the projection lens 7.
  • the basic functional principle provides that the structures introduced into the reticle 5 on the wafer 2 are exposed with a reduction in the size of the structures.
  • the wafer 2 After exposure has taken place, the wafer 2 is moved further in the direction of the arrow, so that a large number of individual fields, each with the structure specified by the reticle 5, are exposed on the same wafer 2. Due to the gradual feed movement of the wafer 2 in the projection exposure system 1, this is often also referred to as a stepper.
  • the illumination device 3 provides a projection beam 11, for example light or a similar electromagnetic radiation, required for imaging the reticle 5 on the wafer 2.
  • a laser or the like can be used as the source for this radiation.
  • the radiation is shaped in the lighting device 3 via optical elements so that the projection beam 11 has the desired properties with regard to diameter, polarization, shape of the wavefront and the like when it hits the reticle 5.
  • An image of the reticle 5 is generated via the projection beam 11 and transferred to the wafer 2 by the projection objective 7 in a correspondingly reduced size, as already explained above.
  • the projection objective 7 has a large number of individual refractive and / or diffractive optical elements, such as, for example, lenses, mirrors, prisms, end plates and the like.
  • a feed line 20 which is connected to a pressure source 21, not shown in detail. Purge gas is introduced into the interior of the projection objective 7 by the pressure source 21.
  • the output line 22 for the purge gas At the end of the projection lens 7 opposite the input side, in the present case in the output region of the exposure radiation leading to the wafer 2, there is an output line 22 for the purge gas.
  • the exact purge gas flow in the interior of the projection lens 7 is not discussed in detail here, since it is known from the prior art.
  • the interior is flushed, it is ensured that the optical elements 9 located therein are swept by the flushing gas stream.
  • nitrogen or helium is often used as the purge gas for higher purity.
  • purging gas lines 23 and 24 are provided, which are provided with one or more outlet nozzles through which purging gas is introduced into the area of the reticle level and into the area of the wafer level becomes.
  • Separate pressure sources 21 or a common pressure source are also provided here for introducing purge gas.
  • a mass flow meter 25 is used as a sensor in the output area of the projection lens 7, for example in the output line 22.
  • the mass' n wishpound- knife 25 is connected via a control line 26 to a monitoring and control device 27, which in turn over a Control line 28 is connected to a switch-off device 29 for the light source of the lighting device for its activation.
  • Another control line 30 leads from the control and control device 27 to a shutter 31, which can be inserted into the beam path 11 of the projection exposure system 1 when it is activated via an actuator, not shown.
  • the mass flow meter 25 can also be arranged in the line 20.
  • its arrangement in the outlet line 22 has the advantage that it reliably detects whether the predetermined purge gas flow rate flows through the entire projection lens 7. In the case of an arrangement in the feed line, any faults, such as leaks, in the projection objective 7, which would reduce the required purge gas flow rate, would not be detectable. If sensors, for example in the form of mass flow meters 32 and 33, are also arranged in the purge gas lines 23 and 24 and are also connected to the control and control device 27 via control lines 34 and 35, the entire purge gas system is monitored.
  • mass flow meters as sensors
  • other measuring elements that detect disturbances in the purge gas flow rate and report them accordingly.
  • Another possibility for this are, for example, pressure drop detection devices which are arranged in the purge gas lines.
  • the pressure sources 21 can also be monitored for proper functioning for this purpose.
  • the control and control device 27 can also be provided with a time switch device 36.
  • the shutter 31 is activated in a first step in the control and control device 27 if the purge gas flow rate falls below the predetermined value such that it is inserted into the beam path 11 of the light source. If the shutter 31 is located in the beam path in front of the reticle level, the entire subsequent area is protected from the damaging UV rays. If the disturbance in the purge gas flow rate is not remedied within a predetermined period of time, then the shutdown device 29 for the light source is actuated in a second step.
  • the time switching device 36 connected to the control and control device 27 can ensure that in the event of only a short-term disturbance in the purge gas flow rate, which does not yet pose a risk of damage to the optical elements 8, the shutter 31 and / or the shutdown device 29 comes.

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un système d'éclairage par projection (1) comportant un dispositif d'éclairage (3) pourvu d'une source lumineuse, en particulier un laser émetteur de lumière ultraviolette, un objectif de projection (7), un plan réticule dans lequel est placé un réticule (5), un plan tranche dans lequel est placée une tranche (2) ainsi qu'un système à gaz de lavage permettant de laver l'intérieur de l'objectif de projection (7) et/ou les zones extérieures, en particulier les plans réticule et tranche. Ledit système comporte au moins un dispositif (25, 32, 33) destiné à surveiller au moins un flux de gaz de lavage, lequel dispositif interrompt le rayonnement de la source lumineuse vers l'objectif de projection (7) lorsque la limite inférieure d'un débit de gaz de lavage prescrit est dépassée. Ce dispositif (25, 32, 33) destiné à surveiller le flux de gaz de lavage est relié à la source lumineuse par l'intermédiaire d'un dispositif de commande, lequel dispositif de commande (27) est équipé d'une minuterie (36).
PCT/EP2004/000330 2003-01-24 2004-01-17 Systeme d'eclairage par projection equipe d'un dispositif d'eclairage WO2004066455A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2003102665 DE10302665A1 (de) 2003-01-24 2003-01-24 Projektionsbelichtungsanlage mit einem Beleuchtungssystem
DE10302665.7 2003-01-24

Publications (2)

Publication Number Publication Date
WO2004066455A2 true WO2004066455A2 (fr) 2004-08-05
WO2004066455A3 WO2004066455A3 (fr) 2005-04-21

Family

ID=32694941

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/000330 WO2004066455A2 (fr) 2003-01-24 2004-01-17 Systeme d'eclairage par projection equipe d'un dispositif d'eclairage

Country Status (2)

Country Link
DE (1) DE10302665A1 (fr)
WO (1) WO2004066455A2 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1004937A2 (fr) * 1998-11-27 2000-05-31 Nikon Corporation Appareil d'exposition et système optique pour celui-ci
US6295121B1 (en) * 1996-01-05 2001-09-25 Canon Kabushiki Kaisha Exposure apparatus
EP1143491A1 (fr) * 1998-11-19 2001-10-10 Nikon Corporation Dispositif optique, systeme d'exposition et source de faisceau laser, procede d'alimentation en gaz, procede d'exposition et procede de fabrication de dispositif
WO2002054464A1 (fr) * 2000-12-28 2002-07-11 Nikon Corporation Construction a liaison gpib et son utilisation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6295121B1 (en) * 1996-01-05 2001-09-25 Canon Kabushiki Kaisha Exposure apparatus
EP1143491A1 (fr) * 1998-11-19 2001-10-10 Nikon Corporation Dispositif optique, systeme d'exposition et source de faisceau laser, procede d'alimentation en gaz, procede d'exposition et procede de fabrication de dispositif
EP1004937A2 (fr) * 1998-11-27 2000-05-31 Nikon Corporation Appareil d'exposition et système optique pour celui-ci
WO2002054464A1 (fr) * 2000-12-28 2002-07-11 Nikon Corporation Construction a liaison gpib et son utilisation

Also Published As

Publication number Publication date
WO2004066455A3 (fr) 2005-04-21
DE10302665A1 (de) 2004-08-12

Similar Documents

Publication Publication Date Title
DE69817663T2 (de) Optischer Belichtungsapparat und optisches Reinigungsverfahren
DE60131203T2 (de) Lithographischer Apparat
DE3406421A1 (de) Vorrichtung zur ueberwachung der intensitaet einer uv-quelle
EP1258780A2 (fr) Système optique de formation d'image avec moyens de polarisation et plaque de cristal de quartz pour ceux-ci
WO2008061681A2 (fr) Optique d'éclairage pour la microlithographie par projection et procédé de mesure et de contrôle pour une telle optique d'éclairage
DE10209493A1 (de) Vorrichtung, EUV-Lithographiegerät und Verfahren zur Vermeidung und Reinigung von Kontamination auf optischen Elementen
DE10061248A1 (de) Verfahren und Vorrichtung zur In-situ-Dekontamination eines EUV-Lithographiegerätes
WO2007085290A2 (fr) Procédé et dispositif de correction d'erreurs de reproduction
DE102009016319A1 (de) Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage
EP1189112A2 (fr) Appareil d' exposition par projection
WO2014044392A1 (fr) Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif
DE102011075465A1 (de) Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
DE60130348T2 (de) Lithographischer Apparat und Verfahren zur Herstellung einer integrierten Schaltungsanordnung
DE602004003015T2 (de) Verfahren und Gerät zur Herstellung einer Schutzschicht auf einem Spiegel
WO2019057708A1 (fr) Procédé de caractérisation d'au moins un composant optique d'une installation de lithographie par projection
DE102019117964A1 (de) Lithographieanlage mit einer Überwachungseinrichtung für ein Pellikel
WO2024068293A1 (fr) Réflectomètre euv et procédé de mesure
WO2004066455A2 (fr) Systeme d'eclairage par projection equipe d'un dispositif d'eclairage
DE102011082481A1 (de) Beleuchtungssystem einer mikrolithographischen projektionsbelichtungsanlage und verfahren zu deren betrieb
WO2007101860A1 (fr) Objectif hors axe muni d'un élément optique rotatif
DE102010006326A1 (de) Anordnung zur Verwendung in einer Projektionsbelichtungsanlage für die Mikrolithographie mit einem reflektiven optischen Element
DE602004000459T2 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE10253162B4 (de) Verfahren zum Spülen einer optischen Linse
DE102017205452A1 (de) Debris-Detektor
DE102015220144A1 (de) Optisches System und Lithographieanlage

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase