WO2004059720A1 - Three-dimensional device fabrication method - Google Patents

Three-dimensional device fabrication method Download PDF

Info

Publication number
WO2004059720A1
WO2004059720A1 PCT/US2002/041181 US0241181W WO2004059720A1 WO 2004059720 A1 WO2004059720 A1 WO 2004059720A1 US 0241181 W US0241181 W US 0241181W WO 2004059720 A1 WO2004059720 A1 WO 2004059720A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
front surface
forming
stud
opening
Prior art date
Application number
PCT/US2002/041181
Other languages
French (fr)
Inventor
H. Bernhard Pogge
Roy Yu
Original Assignee
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corporation filed Critical International Business Machines Corporation
Priority to PCT/US2002/041181 priority Critical patent/WO2004059720A1/en
Priority to CNB028300335A priority patent/CN100383936C/en
Priority to EP02808338A priority patent/EP1573799B1/en
Priority to AU2002368524A priority patent/AU2002368524A1/en
Priority to DE60235267T priority patent/DE60235267D1/en
Priority to US10/538,905 priority patent/US7354798B2/en
Priority to JP2004563148A priority patent/JP4575782B2/en
Priority to AT02808338T priority patent/ATE456860T1/en
Priority to TW092133840A priority patent/TWI242249B/en
Publication of WO2004059720A1 publication Critical patent/WO2004059720A1/en
Priority to IL169264A priority patent/IL169264A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16147—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a bonding area disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06593—Mounting aids permanently on device; arrangements for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Definitions

  • This invention relates to the manufacture of very large-scale integrated semiconductor devices, and more particularly to methods for fabricating three-dimensional, vertically interconnected chips.
  • Microprocessor chips generally include a logic unit and cache memory. If both the logic unit and the memory devices of a microprocessor are arranged in a two-dimensional (2-D) pattern, limitations on the physical size of the chip (imposed by poor process yields for large-area chips) may lead to restrictions on the amount of cache memory. The performance of the microprocessor may therefore be severely limited.
  • a typical 3-D fabrication process includes building devices on wafers which are then thinned to less than 20 ⁇ m; providing vertical interconnections through the wafers; stacking the wafers so that vertical connections are established between wafers at different levels; and bonding the wafers with a suitable material. See, for example, J.-Q. Lu et al., "Fabrication of via- chain test structures for 3D IC technology using dielectric glue bonding on 200 mm wafers," Materials Research Society ULSI XVII Conference Proceedings 151 (2002); P. Ramrn et al.,
  • the present invention addresses the above-described concerns by providing a method for fabricating a three-dimensional integrated device including a plurality of vertically stacked and interconnected wafers, in which the wafers may be reliably bonded together and the requirements for wafer flatness and highly precise alignment between wafers may be relaxed.
  • a via is formed in the first wafer extending from the front surface, the via being characterized by a lateral dimension at the front surface. Material is removed from the first wafer at the back surface thereof, thinning the wafer to less than 20 ⁇ m.
  • An opening is formed in the back surface of the first wafer, thereby exposing the via; the opening has a lateral dimension greater than that of the via.
  • a layer of conducting material is formed in this opening.
  • a stud and a layer of bonding material are formed on the front surface of the second wafer, the studs projecting vertically therefrom.
  • the stud is then aligned to the opening in the back surface of the first wafer; the wafers are bonded using the layer of bonding material, so that the stud makes electrical contact with the via.
  • the second wafer is further provided with a via extending from the front surface of the wafer, and the second wafer is thinned by removing material from the second wafer at the back surface thereof.
  • An opening is formed in the back surface of the second wafer, thereby exposing the via therein; this opening has a lateral dimension greater than the lateral dimension of the via.
  • the third wafer has a layer of bonding material and a stud formed on the front surface thereof; the stud is aligned to the opening in the back surface of the second wafer.
  • the third wafer is then bonded to the second wafer using the layer of bonding material, so that the stud of the third wafer makes electrical contact with the via of the second wafer, with the stud of the second wafer, and with the via of the first wafer.
  • the vias in the respective wafers need not extend vertically from the front surface to the back surface of the wafers.
  • a conducting body, provided in the wafer beneath the device region and extending laterally, may connect the via with the metallized opening in the back surface. Accordingly, the conducting path through the wafer may be led underneath the devices thereof.
  • the bonding layer is preferably a thermoplastic material, and in particular may be polyimide. This permits wafers to be bonded with less stringent requirements regarding flatness and cleanliness.
  • Additional openings may be formed in the back surface of the first wafer, to connect to additional studs on the front surface of the second wafer, where the additional openings and studs are insulated from the vias. These additional connections serve as vertical heat conduction pathways between the wafers.
  • the present invention therefore realizes 3-D vertical integration with both reliable electrical connections and improved heat conduction between wafers.
  • Figures 1 A- II are schematic illustrations of steps in a fabrication process for a
  • FIGS. 2A-2F are schematic illustrations of steps in a fabrication process for a 3-D integrated device, in accordance with a second embodiment of the invention.
  • Figure 3 illustrates a vertical interconnect between wafers extending laterally under a device region of the wafer, in accordance with the invention.
  • FIGS 4A-4C illustrate a fabrication process for improving heat conduction in a 3-D integrated device, also in accordance with the invention.
  • Figure 5 illustrates a completed microprocessor device including a logic unit and a 3-D stacked memory unit, the memory unit being fabricated in accordance with the invention, where the logic and memory units are connected in a 2-D interconnection scheme using C4 technology on a multichip module (MCM).
  • MCM multichip module
  • Figure 6 illustrates a completed microprocessor device including a logic unit and a 3-D stacked memory unit, the memory unit being fabricated in accordance with the invention, where the logic and memory units are connected in a 2-D transfer and join (T&J) interconnection scheme using stud/via connections.
  • T&J 2-D transfer and join
  • Figure 7 illustrates a completed microprocessor device including a logic unit and memory units, where all the units are vertically integrated in accordance with the invention.
  • a plurality of thinned wafers with devices formed thereon may be stacked and vertically interconnected.
  • a three-level stack is fabricated and connected; it will be appreciated that this is for illustration purposes only, and that the process may be adapted to more or fewer than three levels.
  • the 3-D, vertically integrated device may be constructed in two ways, as detailed below.
  • Figure 1 A shows in cross-section a wafer 1 having devices and several levels of high-density interconnection wiring 11 (typically Cu) in a region Id of the wafer near the front surface la thereof.
  • Metallized vias 12 are formed in the wafer, extending below the region Id of devices and lateral interconnects; these vias will become part of the vertical through-connections after wafer 1 is thinned.
  • Vias 12 are typically formed by etching holes in wafer 1, forming a layer of liner material on the sides and bottom of the holes, and filling the holes with metal (preferably copper).
  • the depth of the vias 12 is less than the eventual thickness of wafer 1 after thinning; thus, if the wafer after thinning is about 10 ⁇ m thick, the vias are less than 10 ⁇ m deep.
  • the diameter of the vias 121 must be chosen to balance heat conduction and space concerns. A diameter of approximately 1 ⁇ m consumes minimal space on the wafer surface while providing acceptable heat conduction through the wafer; a smaller via diameter may be used but may not be adequate for conducting heat through the vertical wafer stack.
  • via 12 is shown extending straight downward with a uniform diameter into a region of the wafer below that of the devices. Size requirements for the vias may in practice be substantially relaxed below region Id. Other arrangements are possible which involve the through-connections extending laterally underneath the devices, as discussed in more detail below.
  • a handling plate (typically of glass) 15 is attached to the front surface la of the wafer.
  • the wafer 1 and plate 15 are bonded together using a layer 16 of a thermoplastic bonding material, preferably polyimide.
  • the handling plate 15 attached to the wafer 1 the wafer is thinned by grinding or polishing the back side lb (see Figure IB).
  • the resulting thickness of wafer 1 is less than 20 ⁇ m, preferably about 10 ⁇ m. As shown in Figure IB, the thinning process stops short of exposing the bottom of vias 12.
  • Openings 13 are then etched in the back surface lb of the wafer, exposing the bottom of vias 12 ( Figure 1C).
  • the metal in the via may itself serve as an etch stop for this process; alternatively, an etch stop layer may be provided at another portion of the wafer (not populated by devices) to provide control for this process.
  • openings 13 have a greater diameter than that of vias 12.
  • the openings at the back surface lb are generally larger than the vias at the front surface la.
  • the interior surfaces 14 of opening 13 are then coated with metal (preferably by sputtering) to make contact with the bottom end of the corresponding via 12, so that a conducting path is formed through wafer 1.
  • opening 13 has a diameter greater (typically two times greater) than that of the corresponding via 12; this is to facilitate vertical connection with another wafer.
  • Figure ID shows a second wafer 2 which is to be vertically integrated with wafer
  • Wafer 2 has devices and interconnect wiring 21 formed thereon, similar to wafer 1.
  • metallized vias 22 (typically filled with copper) extend downward into wafer 2; vias 22 have a lateral dimension 221 at surface 2a.
  • a layer of polyimide 26 is deposited on the front surface 2a of wafer 2. Studs 27 are formed on surface 2a, extending above the top surface of layer 26 a distance which typically is 5 ⁇ m or less. Studs 27 may be formed of Ni, Cu, Ni-plated Cu, W or some other metal or combination of metals.
  • a layer 28 of low- melting-point alloy material is deposited on the surface of the stud; this facilitates formation of an electrical connection during the process of vertically joining wafers 1 and 2.
  • the alloy material is typically 90/10 Pb/Sn solder, 2 ⁇ m or less thick; alternative alloy materials include Au/Sn and Sn Ag.
  • the alloy material may be subjected to a thermal reflow process so that layer 28 acquires a rounded shape, as shown in Figure ID; this facilitates alignment of the studs on wafer 2 to corresponding openings in wafer 1.
  • the studs extend electrical connections vertically upward from the devices of wafer 2, while the vias 22 extend electrical connections vertically downward.
  • Wafer 1 (attached to handling plate 15) is then attached to wafer 2 using a bonding and lamination process.
  • studs 27 on wafer 2 are brought into registration with openings 13 on wafer 1, with the back surface lb of wafer 1 in contact with the front surface of polyimide layer 26.
  • the lamination process is performed at a temperature and pressure sufficient to (1) ensure bonding between wafer 1 and layer 26 and (2) ensure electrical contact between stud 27 and metal 14 (and thence to via 12).
  • the temperature may be in the range 200 °C - 400 °C and the pressure may be in the range 10 psi - 200 psi.
  • the bonding and lamination process causes the solder 28 to flow so that solder either partially or completely fills opening 13.
  • the openings 13 have a greater diameter than the studs 27, and are thus able to accommodate imprecision in the lateral placement of wafer 2 relative to wafer 1.
  • surfaces lb and 2a are not directly in contact, but have layer 26 between them.
  • Polyimide layer 26 has sufficient thickness to cover small surface particles, fill in minor surface defects, or accommodate differences in flatness of the two wafers. Accordingly, layer 26 plays an important role in ensuring a reliable mechanical bond between the wafers, while the stud/via connection 27-28-14-12 provides a reliable vertical electrical connection.
  • Wafer 2 (now bonded to wafer 1) is then thinned to less than 20 ⁇ m, preferably about 10 ⁇ m.
  • openings 23 are formed in the back surface 2b of wafer 2, exposing the bottom of vias 22.
  • the interior surfaces of opemngs 23 are coated with metal 24 (preferably by sputtering as with wafer 1), to provide electrical connection to another wafer 3.
  • Figure 1G illustrates preparation of wafer 3 for bonding to wafers 1 and 2.
  • Wafer 3 also has devices and interconnection wiring 31 near the front surface thereof.
  • studs 37 are formed on the front side 3 a of wafer 3. Studs 37 have an alloy material 38 on the surface thereof, similar to studs 27 and alloy material 28 respectively on wafer 2.
  • a polyimide layer 36 is also deposited on surface 3 a, similar to layer 26.
  • wafer 3 is the final wafer of the vertical stack to be bonded; accordingly, wafer 3 is not thinned (in order to provide mechanical strength for the stack) and does not require through-wafer vias.
  • Figure IH shows the result of the bonding and lamination process for wafer 3. Studs 37 are brought into electrical contact with via 22, as a result of alloy material 38 filling opening 23 and bonding to metal layer 24.
  • Polyimide layer 36 is bonded to surface 2b of wafer 2, similarly to layer 26 between wafers 1 and 2. Since the unthinned wafer 3 provides mechanical strength to thinned wafers 1 and 2, the handling plate 15 is no longer required and may be removed at this point. This may conveniently be done by laser ablation; that is, if plate 15 is transparent to ablating radiation, a laser may be used to ablate the interface between plate 15 and layer 16, thereby detaching the plate.
  • the vertically interconnected wafer stack 1-2-3 may then have external connections attached, as shown in Figure II.
  • Figure II shows, for example, C4 technology used to connect the vertical stack to other components in a larger device. Openings 40 are formed in layer 16 to expose the metallized vias 12 of wafer 1; metal pads 41 are then deposited in the openings. C4 solder bumps 42 are then formed on these pads, using (for example) solder mask techniques known in the art.
  • the completed vertically integrated device 100 is then ready to be bonded to C4 pads on a multichip module (MCM) or the like.
  • MCM multichip module
  • wafers 1, 2 and 3 have been illustrated only schematically; in fact, these wafers may be fabricated by a variety of methods and may have different functions. For example, all three wafers may have cache memory devices; wafers 1 and 2 may have memory while wafer 3 has logic devices; one or more of the wafers may incorporate micro-electromechanical systems (MEMS); and so forth.
  • MEMS micro-electromechanical systems
  • the present inventors have found that successful wafer-level vertical integration is ensured by (1) thinning wafers to about 10 ⁇ m, to minimize vertical heat-transfer problems in the vias; (2) using polyimide as a thermoplastic bonding material, to relax wafer flatness and cleanliness requirements; and (3) using stud/via connections where the backside via opening is substantially larger than the stud, to relax lateral registration requirements.
  • FIG. 2A-2E An alternative process for bonding wafers in a vertical stack is illustrated in Figures 2A-2E; this process will be detailed for three wafers but, as noted above, may be adapted to more or fewer wafers.
  • a wafer 1 is first prepared in accordance with the process shown in Figures 1 A-1C; this wafer thus is thinned to about lO ⁇ m, has metallized vias 12 with openings 13 on the back surface, and has a handling plate 15 attached to the front surface with a polyimide layer 16.
  • a second wafer 5, having lateral interconnect wiring 51, is then prepared as shown in Figure 2A
  • Wafer 5 has both vias 52 and studs 57 with alloy material 58, similar to wafer 2 in the process described above (compare Figure ID).
  • a handling plate 55 is provided for wafer 5; plate 55 is covered with a polyimide coating 56 which is patterned to accommodate studs 57.
  • Wafer 5 is then bonded to handling plate 55, which permits the wafer to be thinned ( Figure 2B). Openings 53 are formed in the backside 5b of the thinned wafer, and the interior surfaces thereof are coated with a metal layer 54 as described previously.
  • wafers 1 and 5 each have respective handling plates 15 and 55, they may be prepared, bonded and thinned separately.
  • a third wafer 6, having lateral interconnect wiring 61, is prepared as shown in Figure 2C.
  • This wafer (similar to wafer 3 as shown in Figure IG) has a polyimide layer 66 on its front surface and studs 67, with alloy material 68 on the surfaces thereof, for making vertical electrical connections to the other wafers. Studs 67 protrude from layer 66 a sufficient distance to make contact with the metal layer 54 on wafer 5 (that is, about 5 ⁇ m). Wafers 5 and 6 are then bonded and laminated together, as shown in Figure 2D. Since wafer 6 is not thinned, handling plate 55 is not required after the bonding process and is therefore removed.
  • the interconnection length between chips is much smaller than in a 2-D arrangement of such chips.
  • the vias are shown extending straight downward through the wafers and with a uniform diameter, for convenience of illustration. It is not necessary for the vertical chip-to-chip interconnects to have a small diameter through the full thickness of the wafer, or even for the entire 10 ⁇ m thickness of the thinned wafer.
  • wafer 1 may be prepared with a large metal region 102 embedded therein.
  • the vertical interconnect may then include a vertical wire 12 with a small diameter (less than 1 ⁇ m) to save space as it extends through the device area Id of the wafer, and a much larger metal region 102 extending laterally underneath the device area and connecting with the metallized interior surface of backside opening 103. Opening 103 is thus separated laterally from via 12 in accordance with the lateral extent of region 102.
  • This arrangement minimizes the space needed for the vertical interconnect in the device area while at the same time reducing the resistance of the interconnect.
  • this arrangement makes it possible to locate interconnect areas directly underneath device areas on the wafer (for example, interconnection to another wafer through opening 103 located directly underneath devices in region Id). This in turn permits flexibility in the size and location of openings 103, and thus further relaxes the need for precise alignment between wafers (in this example, between wafers 1 and 2).
  • the metallized vertical connections between wafers may be used for heat conduction as well as for electrical signals.
  • an electrical pathway is routed laterally under the device region of wafer 1 to provide additional space between electrical connection openings 13 on the back side lb of the wafer.
  • Additional openings 113 are formed in the wafer surface and have their interior surfaces 114 coated with metal, similar to openings 13 and metallization 14. (Openings 13, 113 may be formed in the same process step; similarly for metallization 14, 114.)
  • the additional openings 113 do not form part of an electrical connection, but serve to provide a pathway for heat conduction through the wafer stack.
  • studs 127 are formed on the front surface 2a of wafer 2, as shown in Figure 4B.
  • studs 127 connect with the metal 114 in openings 113, to form a metallized heat conduction pathway between wafers 1 and 2 (see Figure 4C).
  • studs 127 may or may not connect electrically with vias 22 or studs 27; no electrical signal is carried to the front surface of wafer 1.
  • Figure 5 illustrates a device 400 having a vertically integrated stack (e.g. a cache memory unit) 100 which is laterally connected to a chip (e.g. a logic unit) 200, using C4 connections to a multichip module (MCM) 300.
  • the vertical memory stack and logic chip have C4 solder bumps 42 and 242 respectively which are bonded to C4 pads 301 on the MCM.
  • the MCM 300 may then be integrated into a larger and more complex device.
  • a closer connection between the cache memory and logic units may be realized by using stud/via connections, as shown in Figure 6.
  • the cache memory unit 401 is prepared according to one of the processes described above, but with metallized vias 420 in polyimide layer 411 (compare Figures II and 2F). Similar vias are formed in polyimide layer 412 on logic unit 402.
  • An insulating layer 450 (of a low-k dielectric material, an oxide, or polyimide), having interconnect wiring embedded therein, has studs 422 formed thereon to match the locations of the vias.
  • Layer 450 may be built up on a handling plate (not shown), with units 401 and 402 then brought into alignment with the studs 422; after a bonding process in which studs 422 are connected with metal pads 421 in the vias, the handling plate is removed from surface 450b.
  • the gap 403 between units 401 and 402 may be filled with a suitable material (e.g. polyimide) for increased mechanical stability.
  • the combined device (now including memory unit 401, logic unit 402, and interconnect layer 450) may then have C4 pads 451 and C4 solder bumps 452 formed on surface 450b, to create an external connection for the device.
  • Combined device 500 includes a logic unit 510 integrated with cache memory chips 501 and 502. In this arrangement, logic unit 510 is at the top of the stack, where it is easiest to remove excess heat.
  • units 100, 200, 401, 402, 500 in Figures 5-7 need not be merely logic and/or memory devices, but may in fact be any of a wide variety of devices.
  • the present invention is generally applicable to semiconductor device structures where high areal density of devices is required.
  • the invention is particularly applicable to chips requiring large memory cache contents which cannot be fabricated with presently available methods due to reticle size limitations or due to limited process yields.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
  • Dicing (AREA)

Abstract

A method is described for fabricating a three-dimensional integrated device including a plurality of vertically stacked and interconnected wafers. Wafers (1, 2, 3) are bonded together using bonding layers (26, 36) of thermoplastic material such as polyimide; electrical connections are realized by vias (12, 22) in the wafers connected to studs (27, 37). The studs connect to openings (13, 23) having a lateral dimension larger than that of the vias at the front surfaces of the wafers. Furthermore, the vias in the respective wafers need not extend vertically from the front surface to the back surface of the wafers. A conducting body (102), provided in the wafer beneath the device region and extending laterally, may connect the via with the matallized opening (103) in the back surface. Accordingly, the conducting path through the wafer may be led underneath the devices thereof. Additional connections may be made between openings (113) and studs (127) to form vertical heat conduction pathways between the wafers.

Description

THREE-DIMENSIONAL DEVICE FABRICATION METHOD
Technical Field
This invention relates to the manufacture of very large-scale integrated semiconductor devices, and more particularly to methods for fabricating three-dimensional, vertically interconnected chips.
Background Art
Microprocessor chips generally include a logic unit and cache memory. If both the logic unit and the memory devices of a microprocessor are arranged in a two-dimensional (2-D) pattern, limitations on the physical size of the chip (imposed by poor process yields for large-area chips) may lead to restrictions on the amount of cache memory. The performance of the microprocessor may therefore be severely limited.
To address the problem of providing adequate cache memory for microprocessors (and more generally the problem of 2-D real estate on a chip), a number of researchers are exploring methods for building three-dimensional (3-D) integrated circuits. A typical 3-D fabrication process includes building devices on wafers which are then thinned to less than 20 μm; providing vertical interconnections through the wafers; stacking the wafers so that vertical connections are established between wafers at different levels; and bonding the wafers with a suitable material. See, for example, J.-Q. Lu et al., "Fabrication of via- chain test structures for 3D IC technology using dielectric glue bonding on 200 mm wafers," Materials Research Society ULSI XVII Conference Proceedings 151 (2002); P. Ramrn et al.,
"Interchip via technology by using copper for vertical system integration," Materials Research Society Advanced Metallization Conference 159 (2002); and Rahman et al., "Thermal analysis of three-dimensional integrated circuits," IEEE International Interconnect Technology Conference Proceedmgs 157 (2001). Significant problems in the present state of the art of 3-D integration include (1) the need for reliable wafer bonding; (2) stringent wafer cleanliness and flatness requirements; (3) the need for reliable, low-resistance inter-wafer vertical connections; (4) stringent wafer-to-wafer lateral registration requirements; and (5) the need for efficient heat conduction through the 3-D device. A process for making 2-D chip-to-chip interconnects is described in "Process for making fine pitch connections between devices and structure made by the process," U.S. Pat. No. 6,444,560 assigned to International Business Machines Corporation, the disclosure of which is incorporated herein by reference. As noted in this patent, chips having different functions and possibly of different materials may be connected through a wiring layer of polyimide using stud/via connections between the wiring layer and the respective chips. It is desirable to extend the techniques discussed in this patent to achieve 3-D chip-level and wafer-level integration.
Disclosure of Invention
The present invention addresses the above-described concerns by providing a method for fabricating a three-dimensional integrated device including a plurality of vertically stacked and interconnected wafers, in which the wafers may be reliably bonded together and the requirements for wafer flatness and highly precise alignment between wafers may be relaxed. In order to vertically connect a first wafer and a second wafer, a via is formed in the first wafer extending from the front surface, the via being characterized by a lateral dimension at the front surface. Material is removed from the first wafer at the back surface thereof, thinning the wafer to less than 20 μm. An opening is formed in the back surface of the first wafer, thereby exposing the via; the opening has a lateral dimension greater than that of the via. A layer of conducting material is formed in this opening. A stud and a layer of bonding material are formed on the front surface of the second wafer, the studs projecting vertically therefrom. The stud is then aligned to the opening in the back surface of the first wafer; the wafers are bonded using the layer of bonding material, so that the stud makes electrical contact with the via. In order to interconnect three wafers, the second wafer is further provided with a via extending from the front surface of the wafer, and the second wafer is thinned by removing material from the second wafer at the back surface thereof. An opening is formed in the back surface of the second wafer, thereby exposing the via therein; this opening has a lateral dimension greater than the lateral dimension of the via. A layer of conducting material is formed in this opening. The third wafer has a layer of bonding material and a stud formed on the front surface thereof; the stud is aligned to the opening in the back surface of the second wafer. The third wafer is then bonded to the second wafer using the layer of bonding material, so that the stud of the third wafer makes electrical contact with the via of the second wafer, with the stud of the second wafer, and with the via of the first wafer. According to the present invention, the vias in the respective wafers need not extend vertically from the front surface to the back surface of the wafers. A conducting body, provided in the wafer beneath the device region and extending laterally, may connect the via with the metallized opening in the back surface. Accordingly, the conducting path through the wafer may be led underneath the devices thereof. The bonding layer is preferably a thermoplastic material, and in particular may be polyimide. This permits wafers to be bonded with less stringent requirements regarding flatness and cleanliness.
Additional openings may be formed in the back surface of the first wafer, to connect to additional studs on the front surface of the second wafer, where the additional openings and studs are insulated from the vias. These additional connections serve as vertical heat conduction pathways between the wafers. The present invention therefore realizes 3-D vertical integration with both reliable electrical connections and improved heat conduction between wafers.
Brief Description of Drawings Figures 1 A- II are schematic illustrations of steps in a fabrication process for a
3-D integrated device, in accordance with a first embodiment of the invention.
Figures 2A-2F are schematic illustrations of steps in a fabrication process for a 3-D integrated device, in accordance with a second embodiment of the invention.
Figure 3 illustrates a vertical interconnect between wafers extending laterally under a device region of the wafer, in accordance with the invention.
Figures 4A-4C illustrate a fabrication process for improving heat conduction in a 3-D integrated device, also in accordance with the invention.
Figure 5 illustrates a completed microprocessor device including a logic unit and a 3-D stacked memory unit, the memory unit being fabricated in accordance with the invention, where the logic and memory units are connected in a 2-D interconnection scheme using C4 technology on a multichip module (MCM).
Figure 6 illustrates a completed microprocessor device including a logic unit and a 3-D stacked memory unit, the memory unit being fabricated in accordance with the invention, where the logic and memory units are connected in a 2-D transfer and join (T&J) interconnection scheme using stud/via connections.
Figure 7 illustrates a completed microprocessor device including a logic unit and memory units, where all the units are vertically integrated in accordance with the invention.
Best Mode for Carrying Out the Invention In accordance with the present invention, a plurality of thinned wafers with devices formed thereon may be stacked and vertically interconnected. In the embodiments described herein, a three-level stack is fabricated and connected; it will be appreciated that this is for illustration purposes only, and that the process may be adapted to more or fewer than three levels. The 3-D, vertically integrated device may be constructed in two ways, as detailed below.
(1) Top-down wafer stack process
Figure 1 A shows in cross-section a wafer 1 having devices and several levels of high-density interconnection wiring 11 (typically Cu) in a region Id of the wafer near the front surface la thereof. Metallized vias 12 are formed in the wafer, extending below the region Id of devices and lateral interconnects; these vias will become part of the vertical through-connections after wafer 1 is thinned. Vias 12 are typically formed by etching holes in wafer 1, forming a layer of liner material on the sides and bottom of the holes, and filling the holes with metal (preferably copper). The depth of the vias 12 is less than the eventual thickness of wafer 1 after thinning; thus, if the wafer after thinning is about 10 μm thick, the vias are less than 10 μm deep. The diameter of the vias 121 must be chosen to balance heat conduction and space concerns. A diameter of approximately 1 μm consumes minimal space on the wafer surface while providing acceptable heat conduction through the wafer; a smaller via diameter may be used but may not be adequate for conducting heat through the vertical wafer stack. For convenience of illustration, via 12 is shown extending straight downward with a uniform diameter into a region of the wafer below that of the devices. Size requirements for the vias may in practice be substantially relaxed below region Id. Other arrangements are possible which involve the through-connections extending laterally underneath the devices, as discussed in more detail below.
In order to facilitate handling of the thinned wafer, a handling plate (typically of glass) 15 is attached to the front surface la of the wafer. The wafer 1 and plate 15 are bonded together using a layer 16 of a thermoplastic bonding material, preferably polyimide. With the handling plate 15 attached to the wafer 1, the wafer is thinned by grinding or polishing the back side lb (see Figure IB). The resulting thickness of wafer 1 is less than 20 μm, preferably about 10 μm. As shown in Figure IB, the thinning process stops short of exposing the bottom of vias 12.
Openings 13 are then etched in the back surface lb of the wafer, exposing the bottom of vias 12 (Figure 1C). The metal in the via may itself serve as an etch stop for this process; alternatively, an etch stop layer may be provided at another portion of the wafer (not populated by devices) to provide control for this process. It should be noted that openings 13 have a greater diameter than that of vias 12. Although numerous arrangements of vias are possible (as discussed further below), the openings at the back surface lb are generally larger than the vias at the front surface la. The interior surfaces 14 of opening 13 are then coated with metal (preferably by sputtering) to make contact with the bottom end of the corresponding via 12, so that a conducting path is formed through wafer 1. It should be noted that opening 13 has a diameter greater (typically two times greater) than that of the corresponding via 12; this is to facilitate vertical connection with another wafer. Figure ID shows a second wafer 2 which is to be vertically integrated with wafer
1. Wafer 2 has devices and interconnect wiring 21 formed thereon, similar to wafer 1. In addition, metallized vias 22 (typically filled with copper) extend downward into wafer 2; vias 22 have a lateral dimension 221 at surface 2a.. A layer of polyimide 26 is deposited on the front surface 2a of wafer 2. Studs 27 are formed on surface 2a, extending above the top surface of layer 26 a distance which typically is 5 μm or less. Studs 27 may be formed of Ni, Cu, Ni-plated Cu, W or some other metal or combination of metals. A layer 28 of low- melting-point alloy material is deposited on the surface of the stud; this facilitates formation of an electrical connection during the process of vertically joining wafers 1 and 2. The alloy material is typically 90/10 Pb/Sn solder, 2 μm or less thick; alternative alloy materials include Au/Sn and Sn Ag. The alloy material may be subjected to a thermal reflow process so that layer 28 acquires a rounded shape, as shown in Figure ID; this facilitates alignment of the studs on wafer 2 to corresponding openings in wafer 1. The studs extend electrical connections vertically upward from the devices of wafer 2, while the vias 22 extend electrical connections vertically downward. Wafer 1 (attached to handling plate 15) is then attached to wafer 2 using a bonding and lamination process. As shown in Figure IE, studs 27 on wafer 2 are brought into registration with openings 13 on wafer 1, with the back surface lb of wafer 1 in contact with the front surface of polyimide layer 26. The lamination process is performed at a temperature and pressure sufficient to (1) ensure bonding between wafer 1 and layer 26 and (2) ensure electrical contact between stud 27 and metal 14 (and thence to via 12). Depending on the materials used, the temperature may be in the range 200 °C - 400 °C and the pressure may be in the range 10 psi - 200 psi. As shown in Figure IE, the bonding and lamination process causes the solder 28 to flow so that solder either partially or completely fills opening 13. It should be noted that the openings 13 have a greater diameter than the studs 27, and are thus able to accommodate imprecision in the lateral placement of wafer 2 relative to wafer 1. Furthermore, it should be noted that surfaces lb and 2a are not directly in contact, but have layer 26 between them. Polyimide layer 26 has sufficient thickness to cover small surface particles, fill in minor surface defects, or accommodate differences in flatness of the two wafers. Accordingly, layer 26 plays an important role in ensuring a reliable mechanical bond between the wafers, while the stud/via connection 27-28-14-12 provides a reliable vertical electrical connection.
Wafer 2 (now bonded to wafer 1) is then thinned to less than 20 μm, preferably about 10 μm. As shown in Figure IF, openings 23 are formed in the back surface 2b of wafer 2, exposing the bottom of vias 22. The interior surfaces of opemngs 23 are coated with metal 24 (preferably by sputtering as with wafer 1), to provide electrical connection to another wafer 3.
Figure 1G illustrates preparation of wafer 3 for bonding to wafers 1 and 2. Wafer 3 also has devices and interconnection wiring 31 near the front surface thereof. In order to make electrical contact with the back side of wafer 2, studs 37 are formed on the front side 3 a of wafer 3. Studs 37 have an alloy material 38 on the surface thereof, similar to studs 27 and alloy material 28 respectively on wafer 2. A polyimide layer 36 is also deposited on surface 3 a, similar to layer 26. In this illustration, wafer 3 is the final wafer of the vertical stack to be bonded; accordingly, wafer 3 is not thinned (in order to provide mechanical strength for the stack) and does not require through-wafer vias.
Figure IH shows the result of the bonding and lamination process for wafer 3. Studs 37 are brought into electrical contact with via 22, as a result of alloy material 38 filling opening 23 and bonding to metal layer 24. Polyimide layer 36 is bonded to surface 2b of wafer 2, similarly to layer 26 between wafers 1 and 2. Since the unthinned wafer 3 provides mechanical strength to thinned wafers 1 and 2, the handling plate 15 is no longer required and may be removed at this point. This may conveniently be done by laser ablation; that is, if plate 15 is transparent to ablating radiation, a laser may be used to ablate the interface between plate 15 and layer 16, thereby detaching the plate.
The vertically interconnected wafer stack 1-2-3 may then have external connections attached, as shown in Figure II. Figure II shows, for example, C4 technology used to connect the vertical stack to other components in a larger device. Openings 40 are formed in layer 16 to expose the metallized vias 12 of wafer 1; metal pads 41 are then deposited in the openings. C4 solder bumps 42 are then formed on these pads, using (for example) solder mask techniques known in the art. The completed vertically integrated device 100 is then ready to be bonded to C4 pads on a multichip module (MCM) or the like.
It should be noted that the internal structure of wafers 1, 2 and 3 has been illustrated only schematically; in fact, these wafers may be fabricated by a variety of methods and may have different functions. For example, all three wafers may have cache memory devices; wafers 1 and 2 may have memory while wafer 3 has logic devices; one or more of the wafers may incorporate micro-electromechanical systems (MEMS); and so forth. The present inventors have found that successful wafer-level vertical integration is ensured by (1) thinning wafers to about 10 μm, to minimize vertical heat-transfer problems in the vias; (2) using polyimide as a thermoplastic bonding material, to relax wafer flatness and cleanliness requirements; and (3) using stud/via connections where the backside via opening is substantially larger than the stud, to relax lateral registration requirements.
(2) Bottom-up wafer stack process
An alternative process for bonding wafers in a vertical stack is illustrated in Figures 2A-2E; this process will be detailed for three wafers but, as noted above, may be adapted to more or fewer wafers. A wafer 1 is first prepared in accordance with the process shown in Figures 1 A-1C; this wafer thus is thinned to about lOμm, has metallized vias 12 with openings 13 on the back surface, and has a handling plate 15 attached to the front surface with a polyimide layer 16.
A second wafer 5, having lateral interconnect wiring 51, is then prepared as shown in Figure 2A Wafer 5 has both vias 52 and studs 57 with alloy material 58, similar to wafer 2 in the process described above (compare Figure ID). A handling plate 55 is provided for wafer 5; plate 55 is covered with a polyimide coating 56 which is patterned to accommodate studs 57. Wafer 5 is then bonded to handling plate 55, which permits the wafer to be thinned (Figure 2B). Openings 53 are formed in the backside 5b of the thinned wafer, and the interior surfaces thereof are coated with a metal layer 54 as described previously.
Since wafers 1 and 5 each have respective handling plates 15 and 55, they may be prepared, bonded and thinned separately.
A third wafer 6, having lateral interconnect wiring 61, is prepared as shown in Figure 2C. This wafer (similar to wafer 3 as shown in Figure IG) has a polyimide layer 66 on its front surface and studs 67, with alloy material 68 on the surfaces thereof, for making vertical electrical connections to the other wafers. Studs 67 protrude from layer 66 a sufficient distance to make contact with the metal layer 54 on wafer 5 (that is, about 5 μm). Wafers 5 and 6 are then bonded and laminated together, as shown in Figure 2D. Since wafer 6 is not thinned, handling plate 55 is not required after the bonding process and is therefore removed. At this point layer 56, on the front surface 5a of wafer 5, is reduced in thickness so as to expose about 5 μm in height of studs 57. Studs 57 are then ready for bonding to metal layer 14 of wafer 1. The result of this bonding process, wherein stacked wafers 5 and 6 are joined to wafer 1, is shown in Figure 2E; alloy material 58 fills the opening 13 in thinned wafer 1, making electrical contact with metal layer 14 and thence to via 12. After wafers 5 and 6 are bonded to wafer 1, handling plate 15 is no longer required and may be removed, thereby exposing layer 16. Layer 16 may then have openings 40 formed therein and metal pads 41 and C4 solder bumps 42 formed to connect to vias 12 (Figure 2F; compare Figure II). It will be appreciated that the above-described techniques for stacking a plurality of thinned chips, and incorporating vertical interconnects from chip to chip, greatly increases chip content and function without increasing its areal (two-dimensional) size. These processes are particularly attractive for chips having the same content, since each of the thinned and stacked chips will then have the same size. This in turn makes the overall processing for the device significantly simpler and more economical. It should be noted that these processes permit wafer-level chip-to-chip interconnection, thus making the process of creating 3-D chips significantly less expensive when compared to single-chip vertical placement, bonding and interconnection processes. In contrast to previously described vertical interconnection schemes, the chip-to-chip interconnections in the present invention are not made along the sides of the chip, but are formed directly through the chip.
It is noteworthy that with the reduced thickness of the stacked wafer (about 10 μm), the interconnection length between chips (e.g. between cache memory units) is much smaller than in a 2-D arrangement of such chips. This gives the added benefit of improved device performance, besides the savings of two-dimensional space. In Figures 1A-1I and 2A-2F, the vias are shown extending straight downward through the wafers and with a uniform diameter, for convenience of illustration. It is not necessary for the vertical chip-to-chip interconnects to have a small diameter through the full thickness of the wafer, or even for the entire 10 μm thickness of the thinned wafer. For example, as shown in Figure 3, wafer 1 may be prepared with a large metal region 102 embedded therein. The vertical interconnect may then include a vertical wire 12 with a small diameter (less than 1 μm) to save space as it extends through the device area Id of the wafer, and a much larger metal region 102 extending laterally underneath the device area and connecting with the metallized interior surface of backside opening 103. Opening 103 is thus separated laterally from via 12 in accordance with the lateral extent of region 102. This arrangement minimizes the space needed for the vertical interconnect in the device area while at the same time reducing the resistance of the interconnect. In addition, it should be noted that this arrangement makes it possible to locate interconnect areas directly underneath device areas on the wafer (for example, interconnection to another wafer through opening 103 located directly underneath devices in region Id). This in turn permits flexibility in the size and location of openings 103, and thus further relaxes the need for precise alignment between wafers (in this example, between wafers 1 and 2).
The metallized vertical connections between wafers may be used for heat conduction as well as for electrical signals. For example, as shown in Figure 4A, an electrical pathway is routed laterally under the device region of wafer 1 to provide additional space between electrical connection openings 13 on the back side lb of the wafer. Additional openings 113 are formed in the wafer surface and have their interior surfaces 114 coated with metal, similar to openings 13 and metallization 14. (Openings 13, 113 may be formed in the same process step; similarly for metallization 14, 114.) The additional openings 113 do not form part of an electrical connection, but serve to provide a pathway for heat conduction through the wafer stack. Additional studs 127, capped with low melting point alloy material
128, are formed on the front surface 2a of wafer 2, as shown in Figure 4B. When the wafers are bonded together in the above-described processes, studs 127 connect with the metal 114 in openings 113, to form a metallized heat conduction pathway between wafers 1 and 2 (see Figure 4C). As shown in Figure 4C, studs 127 may or may not connect electrically with vias 22 or studs 27; no electrical signal is carried to the front surface of wafer 1.
Although the heat conduction pathway in Figures 4A-4C is shown as being formed between wafers 1 and 2, it will be appreciated that this technique may be used to improve heat conduction between any of the wafers in the stack in either of the above- described integration processes (between wafers 2 and 3 shown in Figure IH; between wafers 5 and 6 shown in Figure 2D; and so forth). Figure 5 illustrates a device 400 having a vertically integrated stack (e.g. a cache memory unit) 100 which is laterally connected to a chip (e.g. a logic unit) 200, using C4 connections to a multichip module (MCM) 300. The vertical memory stack and logic chip have C4 solder bumps 42 and 242 respectively which are bonded to C4 pads 301 on the MCM. The MCM 300 may then be integrated into a larger and more complex device.
A closer connection between the cache memory and logic units may be realized by using stud/via connections, as shown in Figure 6. The cache memory unit 401 is prepared according to one of the processes described above, but with metallized vias 420 in polyimide layer 411 (compare Figures II and 2F). Similar vias are formed in polyimide layer 412 on logic unit 402. An insulating layer 450 (of a low-k dielectric material, an oxide, or polyimide), having interconnect wiring embedded therein, has studs 422 formed thereon to match the locations of the vias. Layer 450 may be built up on a handling plate (not shown), with units 401 and 402 then brought into alignment with the studs 422; after a bonding process in which studs 422 are connected with metal pads 421 in the vias, the handling plate is removed from surface 450b. The gap 403 between units 401 and 402 may be filled with a suitable material (e.g. polyimide) for increased mechanical stability. The combined device (now including memory unit 401, logic unit 402, and interconnect layer 450) may then have C4 pads 451 and C4 solder bumps 452 formed on surface 450b, to create an external connection for the device. Alternatively, in a device incorporating cache memory and a logic unit, both may be integrated in a vertical stack, as shown in Figure 7. Combined device 500 includes a logic unit 510 integrated with cache memory chips 501 and 502. In this arrangement, logic unit 510 is at the top of the stack, where it is easiest to remove excess heat.
It will be understood that units 100, 200, 401, 402, 500 in Figures 5-7 need not be merely logic and/or memory devices, but may in fact be any of a wide variety of devices.
Accordingly, different device technologies may easily be combined in a 3-D integrated device using the process of the present invention. Industrial Applicability
The present invention is generally applicable to semiconductor device structures where high areal density of devices is required. The invention is particularly applicable to chips requiring large memory cache contents which cannot be fabricated with presently available methods due to reticle size limitations or due to limited process yields.
While the present invention has been described in terms of specific embodiments, it is evident in view of the foregoing description that numerous alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, the invention is intended to encompass all such alternatives, modifications and variations which fall within the scope and spirit of the invention and the following claims.

Claims

Claims
1. A method for fabricating a three-dimensional integrated device including a plurality of vertically stacked and interconnected wafers, the method comprising the steps of: providing a first wafer (1) having a front surface (la) and a back surface (lb), the first wafer having devices formed in a region (Id) adjacent to the front surface thereof; forming a via (12) in the first wafer extending from the front surface, the via being characterized by a lateral dimension (121) at the front surface; removing material from the first wafer at the back surface (lb) thereof; forming an opening (13) in the back surface of the first wafer, thereby exposing the via, the opening having a lateral dimension greater than said lateral dimension of the via; forming a layer of conducting material (14) in said opening; providing a second wafer (2) having a front surface (2a) and a back surface (2b), the second wafer having devices formed therein adjacent to the front surface thereof; forming a stud (27) on the front surface of the second wafer; forming a layer of bonding material (26) on the front surface (2a) of the second wafer, the studs projecting vertically therefrom; aligning the stud (27) to the opening (13) in the back surface of the first wafer; and bonding the second wafer to the first wafer using the layer of bonding material (26), so that the stud makes electrical contact with the via.
2. A method according to claim 1, further comprising the steps of: forming a via (22) in the second wafer (2) extending from the front surface thereof (2a), the via being characterized by a lateral dimension (221) at the front surface (2a); removing material from the second wafer at the back surface (2b) thereof; forming an opening (23) in the back surface (2b) of the second wafer, thereby exposing the via (22) therein, said opening (23) having a lateral dimension greater than said lateral dimension (221) of the via (22); forming a layer of conducting material (24) in said opening; providing a third wafer (3) having a front surface (3 a), the third wafer having devices formed therein adjacent to the front surface thereof; forming a stud (37) on the front surface (3 a) of the third wafer; forming a layer of bonding material (36) on the front surface (3 a) of the third wafer, the studs projecting vertically therefrom; aligning the stud (37) to the opening (23) in the back surface of the second wafer; and bonding the third wafer to the second wafer using the layer of bonding material (36), so that the stud (37) of the third wafer makes electrical contact with the via (22) of the second wafer, with the stud (27) of the second wafer, and with the via (12) of the first wafer.
3. A method according to claim 1 or claim 2, characterized in that said step of removing material causes the wafer to have a thickness of less than 20μm.
4. A method according to claim 1 or claim 2, further comprising the step of attaching a handling plate (15) to the front surface (la) of the first wafer (1) using a layer of bonding material (16).
5. A method according to any preceding claim, further comprising the step of forming a conducting body (102) in one of the first wafer (1) and the second wafer (2) and connecting to the via (12/22) in the wafer, the conducting body extending laterally under the devices of the wafer, and characterized in that the opening (103) in the back side of the wafer is separated laterally from the via in accordance with the lateral extent of the conducting body (102).
6. A method according to any preceding claim, further comprising the steps of: forming an additional opening (113) in the back surface of the first wafer; forming an additional layer of conducting material (114) in said additional opening; forming an additional stud (127) on the front surface of the second wafer; and aligning the additional stud (127) to the additional opening (113) in the back surface of the first wafer; and characterized in that said step of bonding the second wafer to the first wafer forms a connection between the additional stud (127) and the additional layer of conducting material (114) for conducting heat between the second wafer and the first wafer.
7. A method according to claim 6, characterized in that the additional layer of conducting material (114) is electrically insulated from the via (12).
8. A method according to claim 2, further comprising the steps of: forming an additional opening in the back surface of the second wafer; forming an additional layer of conducting material in said additional opening; forming an additional stud on the front surface of the third wafer; and aligning the additional stud to the additional opening in the back surface of the second wafer; and characterized in that said step of bonding the third wafer to the second wafer forms a connection between the additional stud and the additional layer of conducting material for conducting heat between the third wafer and the second wafer.
9. A method according to any preceding claim, characterized in that said bonding material is a thermoplastic material.
10. A method according to claim 9, characterized in that the thermoplastic material is polyimide.
11. A method according to any of claims 1-10, further comprising the step of attaching the three-dimensional integrated device (100) to a multichip module (300).
12. A method according to any of claims 1-10, further comprising the step of attaching the three-dimensional integrated device (401) to an insulating layer having wiring formed therein (450) using a stud-via connection.
13. A method according to any of claims 2-12, characterized in that the first wafer and second wafer have cache memory devices, and the third wafer has logic devices.
14. A method according to any of claims 2-12, characterized in that at least one of the first wafer, the second wafer and the third wafer includes a MEMS device.
PCT/US2002/041181 2002-12-20 2002-12-20 Three-dimensional device fabrication method WO2004059720A1 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
PCT/US2002/041181 WO2004059720A1 (en) 2002-12-20 2002-12-20 Three-dimensional device fabrication method
CNB028300335A CN100383936C (en) 2002-12-20 2002-12-20 Three-dimensional device fabrication method
EP02808338A EP1573799B1 (en) 2002-12-20 2002-12-20 Three-dimensional device fabrication method
AU2002368524A AU2002368524A1 (en) 2002-12-20 2002-12-20 Three-dimensional device fabrication method
DE60235267T DE60235267D1 (en) 2002-12-20 2002-12-20 METHOD OF MANUFACTURING A THREE-DIMENSIONAL DEVICE
US10/538,905 US7354798B2 (en) 2002-12-20 2002-12-20 Three-dimensional device fabrication method
JP2004563148A JP4575782B2 (en) 2002-12-20 2002-12-20 Manufacturing method of three-dimensional device
AT02808338T ATE456860T1 (en) 2002-12-20 2002-12-20 PROCESS FOR PRODUCTION OF A THREE-DIMENSIONAL DEVICE
TW092133840A TWI242249B (en) 2002-12-20 2003-12-02 Three-dimensional device fabrication method
IL169264A IL169264A0 (en) 2002-12-20 2005-06-19 Three-dimensional device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/041181 WO2004059720A1 (en) 2002-12-20 2002-12-20 Three-dimensional device fabrication method

Publications (1)

Publication Number Publication Date
WO2004059720A1 true WO2004059720A1 (en) 2004-07-15

Family

ID=32679941

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/041181 WO2004059720A1 (en) 2002-12-20 2002-12-20 Three-dimensional device fabrication method

Country Status (9)

Country Link
EP (1) EP1573799B1 (en)
JP (1) JP4575782B2 (en)
CN (1) CN100383936C (en)
AT (1) ATE456860T1 (en)
AU (1) AU2002368524A1 (en)
DE (1) DE60235267D1 (en)
IL (1) IL169264A0 (en)
TW (1) TWI242249B (en)
WO (1) WO2004059720A1 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006041580A1 (en) * 2004-10-07 2006-04-20 Hewlett-Packard Development Company, L.P. 3d interconnect with protruding contacts
WO2007050754A2 (en) * 2005-10-24 2007-05-03 Intel Corporation Stackable wafer or die packaging with enhanced thermal and device performance
FR2894070A1 (en) * 2005-11-30 2007-06-01 3D Plus Sa Sa Three-dimensional electronic module, has conducting element and bumps made of material having determined hardness, where hardness of material of element is lower than hardness of material of bumps so that bumps penetrate in element
JP2007220726A (en) * 2006-02-14 2007-08-30 Asahi Glass Co Ltd Multi-chip element and manufacturing method thereof
JP2008544481A (en) * 2005-05-09 2008-12-04 サンディスク スリーディー，エルエルシー High density non-volatile memory arrays fabricated at low temperature including semiconductor diodes.
EP2075828A1 (en) 2007-12-27 2009-07-01 Interuniversitair Microelektronica Centrum (IMEC) Semiconductor device and a method for aligining and bonding a first and second element for the fabrication of a semiconductor device
US20090215226A1 (en) * 2004-08-20 2009-08-27 Koninklijke Philips Electronics N.V. Method of Detaching a Thin Semiconductor Circuit From Its Base
JP2009545174A (en) * 2006-07-25 2009-12-17 インターナショナル・ビジネス・マシーンズ・コーポレーション Metal filled through via structure for providing vertical wafer-to-wafer interconnects
WO2009131671A3 (en) * 2008-04-22 2010-02-11 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
EP2154708A1 (en) 2008-08-15 2010-02-17 Shin-Etsu Chemical Co., Ltd. High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
EP2154710A2 (en) 2008-08-15 2010-02-17 Shin-Etsu Chemical Co., Ltd. Substrate joining method and 3-D semiconductor device
DE102009004725A1 (en) * 2009-01-15 2010-07-29 Austriamicrosystems Ag Through-hole semiconductor circuit and method of manufacturing vertically integrated circuits
DE112005003671B4 (en) * 2005-08-31 2010-11-25 Intel Corporation, Santa Clara A microprocessor with a L4 level cache and method of manufacturing the assembly and system comprising the assembly
US8032711B2 (en) 2006-12-22 2011-10-04 Intel Corporation Prefetching from dynamic random access memory to a static random access memory
US8643192B2 (en) 2011-05-19 2014-02-04 Microsemi Semiconductor Limited Integrated circuit package with discrete components surface mounted on exposed side
US8829684B2 (en) 2011-05-19 2014-09-09 Microsemi Semiconductor Limited Integrated circuit package
US9136233B2 (en) 2013-06-06 2015-09-15 STMicroelctronis (Crolles 2) SAS Process for fabricating a three-dimensional integrated structure with improved heat dissipation, and corresponding three-dimensional integrated structure
US9633917B2 (en) 2015-08-20 2017-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional integrated circuit structure and method of manufacturing the same

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485968B2 (en) * 2005-08-11 2009-02-03 Ziptronix, Inc. 3D IC method and device
GB2449853B (en) 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
JP5570689B2 (en) * 2007-07-23 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル Stacked memory
US8486823B2 (en) * 2008-03-07 2013-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming through via
US9136259B2 (en) * 2008-04-11 2015-09-15 Micron Technology, Inc. Method of creating alignment/centering guides for small diameter, high density through-wafer via die stacking
US8853830B2 (en) * 2008-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. System, structure, and method of manufacturing a semiconductor substrate stack
CN101542702B (en) * 2008-06-05 2014-06-04 香港应用科技研究院有限公司 Bonding method of three dimensional wafer lamination based on silicon through holes
US8129256B2 (en) * 2008-08-19 2012-03-06 International Business Machines Corporation 3D integrated circuit device fabrication with precisely controllable substrate removal
TWI402941B (en) * 2009-12-03 2013-07-21 Advanced Semiconductor Eng Semiconductor structure and method for making the same
CN102683265A (en) * 2011-03-15 2012-09-19 中国科学院微电子研究所 Method for filling carbon nanotube bundle into through silicon via of silicon adapter plate
KR102084337B1 (en) 2011-05-24 2020-04-23 소니 주식회사 Semiconductor device
JP2013042052A (en) * 2011-08-19 2013-02-28 Nec Corp Manufacturing method for semiconductor device
JP2013098514A (en) * 2011-11-07 2013-05-20 Seiko Epson Corp Semiconductor device manufacturing method, semiconductor device and electronic apparatus
JP2013201240A (en) * 2012-03-23 2013-10-03 Toshiba Corp Method for manufacturing semiconductor device and glass substrate for semiconductor substrate support
TWI540710B (en) 2012-06-22 2016-07-01 Sony Corp A semiconductor device, a method for manufacturing a semiconductor device, and an electronic device
TWI487041B (en) * 2012-08-08 2015-06-01 Subtron Technology Co Ltd Package carrier and manufacturing method thereof
CN103107128B (en) * 2013-01-14 2014-12-17 武汉新芯集成电路制造有限公司 Metal bonding method of three-dimensional chip structure and bonding structure
JP2014170793A (en) * 2013-03-01 2014-09-18 Fujitsu Semiconductor Ltd Semiconductor device, semiconductor device manufacturing method and electronic apparatus
JP5939184B2 (en) 2013-03-22 2016-06-22 ソニー株式会社 Manufacturing method of semiconductor device
CN104008998B (en) * 2014-06-10 2016-08-03 山东华芯半导体有限公司 Multi-chip laminating method for packing
KR20170018815A (en) * 2014-06-16 2017-02-20 인텔 코포레이션 Embedded memory in interconnect stack on silicon die
CN107994043A (en) * 2017-12-11 2018-05-04 德淮半导体有限公司 Wafer, stacked semiconductor devices and its manufacture method
CN109727848B (en) * 2018-12-29 2020-09-01 长江存储科技有限责任公司 Manufacturing method of three-dimensional memory
EP3847698A4 (en) 2019-01-30 2023-07-12 Yangtze Memory Technologies Co., Ltd. Hybrid bonding using dummy bonding contacts
CN111564424A (en) * 2019-01-30 2020-08-21 长江存储科技有限责任公司 Structures and devices using hybrid bonding and methods of forming the same
US11545435B2 (en) * 2019-06-10 2023-01-03 Qualcomm Incorporated Double sided embedded trace substrate
CN111106022A (en) * 2019-12-30 2020-05-05 武汉新芯集成电路制造有限公司 Bonding structure and manufacturing method thereof
US11581281B2 (en) * 2020-06-26 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Packaged semiconductor device and method of forming thereof
US12040296B2 (en) 2022-01-12 2024-07-16 Changxin Memory Technologies, Inc. Semiconductor structure and method for manufacturing semiconductor structure
CN116469857A (en) * 2022-01-12 2023-07-21 长鑫存储技术有限公司 Semiconductor structure and manufacturing method thereof

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462650A (en) * 1951-01-28 1969-08-19 Telefunken Patent Electrical circuit manufacture
JPS62117316A (en) * 1985-11-16 1987-05-28 Sharp Corp Semiconductor device
US4889832A (en) * 1987-12-23 1989-12-26 Texas Instruments Incorporated Method of fabricating an integrated circuit with metal interconnecting layers above and below active circuitry
US4939568A (en) * 1986-03-20 1990-07-03 Fujitsu Limited Three-dimensional integrated circuit and manufacturing method thereof
US4982266A (en) * 1987-12-23 1991-01-01 Texas Instruments Incorporated Integrated circuit with metal interconnecting layers above and below active circuitry
US5091331A (en) * 1990-04-16 1992-02-25 Harris Corporation Ultra-thin circuit fabrication by controlled wafer debonding
US5229647A (en) * 1991-03-27 1993-07-20 Micron Technology, Inc. High density data storage using stacked wafers
US5268326A (en) * 1992-09-28 1993-12-07 Motorola, Inc. Method of making dielectric and conductive isolated island
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5627106A (en) * 1994-05-06 1997-05-06 United Microelectronics Corporation Trench method for three dimensional chip connecting during IC fabrication
US5786238A (en) * 1997-02-13 1998-07-28 Generyal Dynamics Information Systems, Inc. Laminated multilayer substrates
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US6114768A (en) * 1996-10-07 2000-09-05 Intersil Corporation Surface mount die by handle replacement
US6444560B1 (en) * 2000-09-26 2002-09-03 International Business Machines Corporation Process for making fine pitch connections between devices and structure made by the process
US6489217B1 (en) * 2001-07-03 2002-12-03 Maxim Integrated Products, Inc. Method of forming an integrated circuit on a low loss substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140850A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Manufacture of laminated integration type semiconductor circuit device
JPS60160645A (en) * 1984-02-01 1985-08-22 Hitachi Ltd Laminated semiconductor integrated circuit device
JPS63142663A (en) * 1986-12-04 1988-06-15 Sharp Corp Semiconductor device and its manufacture
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
JPH0555534A (en) * 1991-08-22 1993-03-05 Seiko Instr Inc Production of laminated semiconductor device
WO1995009438A1 (en) * 1993-09-30 1995-04-06 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JP2897827B2 (en) * 1997-04-08 1999-05-31 日本電気株式会社 Multilayer wiring structure of semiconductor device
JP4032454B2 (en) * 1997-06-27 2008-01-16 ソニー株式会社 Manufacturing method of three-dimensional circuit element
JP4063944B2 (en) * 1998-03-13 2008-03-19 独立行政法人科学技術振興機構 Manufacturing method of three-dimensional semiconductor integrated circuit device
US6093969A (en) * 1999-05-15 2000-07-25 Lin; Paul T. Face-to-face (FTF) stacked assembly of substrate-on-bare-chip (SOBC) modules
JP2001326325A (en) * 2000-05-16 2001-11-22 Seiko Epson Corp Semiconductor device and its manufacturing method
JP4123682B2 (en) * 2000-05-16 2008-07-23 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof
JP3951091B2 (en) * 2000-08-04 2007-08-01 セイコーエプソン株式会社 Manufacturing method of semiconductor device
JP4560958B2 (en) * 2000-12-21 2010-10-13 日本テキサス・インスツルメンツ株式会社 Micro electro mechanical system

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462650A (en) * 1951-01-28 1969-08-19 Telefunken Patent Electrical circuit manufacture
JPS62117316A (en) * 1985-11-16 1987-05-28 Sharp Corp Semiconductor device
US4939568A (en) * 1986-03-20 1990-07-03 Fujitsu Limited Three-dimensional integrated circuit and manufacturing method thereof
US4889832A (en) * 1987-12-23 1989-12-26 Texas Instruments Incorporated Method of fabricating an integrated circuit with metal interconnecting layers above and below active circuitry
US4982266A (en) * 1987-12-23 1991-01-01 Texas Instruments Incorporated Integrated circuit with metal interconnecting layers above and below active circuitry
US5091331A (en) * 1990-04-16 1992-02-25 Harris Corporation Ultra-thin circuit fabrication by controlled wafer debonding
US5229647A (en) * 1991-03-27 1993-07-20 Micron Technology, Inc. High density data storage using stacked wafers
US5268326A (en) * 1992-09-28 1993-12-07 Motorola, Inc. Method of making dielectric and conductive isolated island
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
US5627106A (en) * 1994-05-06 1997-05-06 United Microelectronics Corporation Trench method for three dimensional chip connecting during IC fabrication
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US6114768A (en) * 1996-10-07 2000-09-05 Intersil Corporation Surface mount die by handle replacement
US5786238A (en) * 1997-02-13 1998-07-28 Generyal Dynamics Information Systems, Inc. Laminated multilayer substrates
US6444560B1 (en) * 2000-09-26 2002-09-03 International Business Machines Corporation Process for making fine pitch connections between devices and structure made by the process
US6489217B1 (en) * 2001-07-03 2002-12-03 Maxim Integrated Products, Inc. Method of forming an integrated circuit on a low loss substrate

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338228B2 (en) * 2004-08-20 2012-12-25 Nxp B.V. Method of detaching a thin semiconductor circuit from its base
US20090215226A1 (en) * 2004-08-20 2009-08-27 Koninklijke Philips Electronics N.V. Method of Detaching a Thin Semiconductor Circuit From Its Base
WO2006041580A1 (en) * 2004-10-07 2006-04-20 Hewlett-Packard Development Company, L.P. 3d interconnect with protruding contacts
JP2008544481A (en) * 2005-05-09 2008-12-04 サンディスク スリーディー，エルエルシー High density non-volatile memory arrays fabricated at low temperature including semiconductor diodes.
DE112005003671B4 (en) * 2005-08-31 2010-11-25 Intel Corporation, Santa Clara A microprocessor with a L4 level cache and method of manufacturing the assembly and system comprising the assembly
GB2444467A (en) * 2005-10-24 2008-06-04 Intel Corp Stackable wafer or die packaging with enhanced thermal and device performance
WO2007050754A3 (en) * 2005-10-24 2007-06-14 Intel Corp Stackable wafer or die packaging with enhanced thermal and device performance
WO2007050754A2 (en) * 2005-10-24 2007-05-03 Intel Corporation Stackable wafer or die packaging with enhanced thermal and device performance
GB2444467B (en) * 2005-10-24 2010-12-08 Intel Corp Stacked wafer or die packaging with enhanced thermal and device performance
US7723759B2 (en) 2005-10-24 2010-05-25 Intel Corporation Stacked wafer or die packaging with enhanced thermal and device performance
FR2894070A1 (en) * 2005-11-30 2007-06-01 3D Plus Sa Sa Three-dimensional electronic module, has conducting element and bumps made of material having determined hardness, where hardness of material of element is lower than hardness of material of bumps so that bumps penetrate in element
US8264853B2 (en) 2005-11-30 2012-09-11 3D Plus 3D electronic module
JP2009517877A (en) * 2005-11-30 2009-04-30 トロワデー、プリュ 3D electronic module
WO2007063113A1 (en) * 2005-11-30 2007-06-07 3D Plus 3d electronic module
JP2007220726A (en) * 2006-02-14 2007-08-30 Asahi Glass Co Ltd Multi-chip element and manufacturing method thereof
JP2009545174A (en) * 2006-07-25 2009-12-17 インターナショナル・ビジネス・マシーンズ・コーポレーション Metal filled through via structure for providing vertical wafer-to-wafer interconnects
US8032711B2 (en) 2006-12-22 2011-10-04 Intel Corporation Prefetching from dynamic random access memory to a static random access memory
EP2075828A1 (en) 2007-12-27 2009-07-01 Interuniversitair Microelektronica Centrum (IMEC) Semiconductor device and a method for aligining and bonding a first and second element for the fabrication of a semiconductor device
US7821107B2 (en) 2008-04-22 2010-10-26 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
US8546919B2 (en) 2008-04-22 2013-10-01 Micro Technology, Inc. Die stacking with an annular via having a recessed socket
CN102047418A (en) * 2008-04-22 2011-05-04 美光科技公司 Die stacking with an annular via having a recessed socket
US7952171B2 (en) 2008-04-22 2011-05-31 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
CN102047418B (en) * 2008-04-22 2013-10-16 美光科技公司 Die stacking with an annular via having a recessed socket
US8227343B2 (en) 2008-04-22 2012-07-24 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
WO2009131671A3 (en) * 2008-04-22 2010-02-11 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
US8257528B2 (en) 2008-08-15 2012-09-04 Shin-Etsu Chemical Co., Ltd. Substrate joining method and 3-D semiconductor device
US8277600B2 (en) 2008-08-15 2012-10-02 Shin-Etsu Chemical Co., Ltd. High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
EP2154710A2 (en) 2008-08-15 2010-02-17 Shin-Etsu Chemical Co., Ltd. Substrate joining method and 3-D semiconductor device
EP2154708A1 (en) 2008-08-15 2010-02-17 Shin-Etsu Chemical Co., Ltd. High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
EP2154708B1 (en) * 2008-08-15 2017-07-26 Shin-Etsu Chemical Co., Ltd. High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
DE102009004725A1 (en) * 2009-01-15 2010-07-29 Austriamicrosystems Ag Through-hole semiconductor circuit and method of manufacturing vertically integrated circuits
US8643192B2 (en) 2011-05-19 2014-02-04 Microsemi Semiconductor Limited Integrated circuit package with discrete components surface mounted on exposed side
US8829684B2 (en) 2011-05-19 2014-09-09 Microsemi Semiconductor Limited Integrated circuit package
US9136233B2 (en) 2013-06-06 2015-09-15 STMicroelctronis (Crolles 2) SAS Process for fabricating a three-dimensional integrated structure with improved heat dissipation, and corresponding three-dimensional integrated structure
US9633917B2 (en) 2015-08-20 2017-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional integrated circuit structure and method of manufacturing the same

Also Published As

Publication number Publication date
CN100383936C (en) 2008-04-23
EP1573799A1 (en) 2005-09-14
JP2006522461A (en) 2006-09-28
JP4575782B2 (en) 2010-11-04
ATE456860T1 (en) 2010-02-15
TW200520108A (en) 2005-06-16
CN1708840A (en) 2005-12-14
AU2002368524A1 (en) 2004-07-22
EP1573799A4 (en) 2009-02-25
IL169264A0 (en) 2007-07-04
DE60235267D1 (en) 2010-03-18
TWI242249B (en) 2005-10-21
EP1573799B1 (en) 2010-01-27

Similar Documents

Publication Publication Date Title
US7354798B2 (en) Three-dimensional device fabrication method
EP1573799B1 (en) Three-dimensional device fabrication method
KR100441698B1 (en) Process for making fine pitch connections between devices and structure made by the process
JP7455110B2 (en) A multichip package structure with a chip interconnect bridge that provides power connections between the chip and the package substrate.
US6864165B1 (en) Method of fabricating integrated electronic chip with an interconnect device
KR100527232B1 (en) Chip and wafer integration process using vertical connections
TWI619210B (en) Face-to-face semiconductor assembly having semiconductor device in dielectric recess
CN115527972A (en) High-density interconnection three-dimensional integrated device packaging structure and manufacturing method thereof
US11791326B2 (en) Memory and logic chip stack with a translator chip
CN115274475A (en) Chip packaging method with high-density connecting layer and chip packaging structure thereof
KR100621960B1 (en) Three-dimensional device fabrication method
CN114334805A (en) Heat dissipation interconnection forming method for 3D packaging
CN115527869A (en) Three-dimensional stacked fan-out type chip packaging method and packaging structure

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020057009031

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 20028300335

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 2006121690

Country of ref document: US

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 10538905

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2004563148

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1-2005-501156

Country of ref document: PH

WWE Wipo information: entry into national phase

Ref document number: 169264

Country of ref document: IL

WWE Wipo information: entry into national phase

Ref document number: 1339/CHENP/2005

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2002808338

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020057009031

Country of ref document: KR

Ref document number: 2002808338

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 10538905

Country of ref document: US