JPS62117316A - Semiconductor device - Google Patents

Abstract

PURPOSE:To evaluate the crystallinity of a semiconductor during manufacture easily by forming one conduction type region, to which an additive of a predetermined kind is added selectively, and a reaction region to which another additive is added selectively in not less than concentration where magnetic resonance absorption is generated. CONSTITUTION:In a three-element circuit 21, N<+> type regions 23, 24 as one conduction type region are shaped into a substrate such as a P-type Si substrates 22, and an insulating layer 25 is formed selectively onto the surface of the substrate 22. Electrodes 28-30 are shaped, coating through-holes 26, 27 for the layer 25. An insulating layer 31 is formed onto the electrodes 28-30, a single crystal semiconductor layer in Si or Ge is shaped onto the insulating layer 31, and a P-type Si growth layer 22a is grown. Likewise, an Si growth layer 22b is shaped. An additive, such as P, AS, etc. capable of measuring magnetic resonance absorption is added to these growth layers 22a, 22b, thus forming reaction layers 35, 36. These additives are added previously to the Si substrate having excellent crystallizability, magnetic resonance absorption is measured beforehand, and the data of the measurement and the magnetic resonance absorption data of the Si growth layer are compared, thus evaluating the crystallinity of the Si growth layer.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Application of Industry-1- The present invention relates to a semiconductor device such as a substrate made of a single semiconductor material, and more particularly, to a semiconductor device such as a substrate made of a single semiconductor material.

The configuration in which the crystal +1 of the conductor material can be evaluated in physical PIi terms is a.
Then, on top of that, a half-sized body appeared.

In recent years, research and development of so-called three-dimensional integrated circuits, which have a structure in which several semiconductor integrated circuits are stacked, has been active. Figure 5 shows a conventional silicon S1-based two-dimensional integrated circuit (fJ,
1 is a cross-sectional view showing a structural example of a circuit (abbreviated as 'l'-dimensional circuit). In the tertiary upper circuit 1, for example, an n' type region 34 is formed in the P type silicon layer 2, and p yfI
selectively forming an insulating layer 5 on the surface of the Y silicon layer 2;
Through holes 6 and 7 were formed. The through holes 6, 7, etc. of the insulating layer 5 are covered to form electrodes), 9. in is formed. Above this) F) type silicon layer 2, n1 type region 3.4, insulating layer 5
and electric i8.9.10 constitute a field effect type transistor (hereinafter abbreviated as F).

Further, an insulating layer 11 is formed to cover the direct electrode +1.9.1Q. A P-type silicon layer 342a is grown on this insulation M111:. Similarly, growth (42)
l+, 11° type region, '(a, 4 a; 3)it
4 b, insulating layers 5 a, 5 b, through holes 6 at 7 a;
61i, 7b, electrodes 8a, 9a, 10a
;81+, 9 b, 1 (l b and absolute M7%11
a are formed in this order. 1, 3rd order jt circuit 1
To the silicon growth layers 2a and 2b in ``!'':
Since the semiconductor device f- such as T has been formed,! 11 crystalline silicon growth 1fJ 2 a + 211 crystallinity is
Subtly affects the performance of semiconductor materials. Therefore, at the stage of mass production of the two-dimensional circuit 1, it is extremely important to quickly evaluate the crystallinity of the silicon growth layers 21I and 211 during the device manufacturing process in order to improve the yield of semiconductor device manufacturing. .

In particular, if a large number of three-dimensional circuits fail, it may take a long period of time, such as several weeks, to complete device fabrication. In this case, performing crystallinity evaluation during device manufacturing is effective in improving mass productivity and yield.

Problem to be solved by the invention, α In the prior art, it was difficult to evaluate the crystallinity of the semiconductor layer growth J (12a, 2b) existing inside the three-dimensional circuit 1 as described above. .

An object of the present invention is to solve the above-mentioned problems and
An object of the present invention is to provide a semiconductor device in which the crystallinity of a semiconductor layer included in the semiconductor device can be easily evaluated during the manufacturing process.

Means for Solving the Problems The present invention provides a semiconductor layer formed on J% &, a Jj conductivity type region formed by selectively adding a predetermined type of additive; It is characterized by including such a semiconductor layer having a reaction region in which an additive of a different type from the additive is selectively added at a concentration lower than the level at which magnetic resonance absorption due to electromagnetic waves occurs. This is a semiconductor device.

The semiconductor device of the present invention is a semiconductor layer formed on a substrate, and a conductive type region formed by selectively adding a predetermined type of additive, and a semiconductor layer formed by selectively adding a predetermined type of additive, and a semiconductor layer formed by selectively adding a predetermined type of additive. The present invention includes such a semiconductor layer having a J-suppression region formed by selectively doping a type of additive at a concentration higher than that at which magnetic resonance absorption due to electromagnetic waves occurs. The magnetic resonance absorption of the hole type additive changes based on the interaction with the ions of the molecules constituting the semiconductor layer in which this additive is included. Therefore, the degree of crystallinity of the semiconductor layer can be detected by observing magnetic resonance absorption due to electromagnetic waves at the stage of adding the hole type additive -:(-.

Examples Since the present invention uses magnetic resonance absorption (ESR) technology, an outline of magnetic resonance absorption will be explained below.

The present invention is basically based on the principle of resonance absorption of microwaves by magnetic ions, and magnetic resonance absorption will be briefly described using FIG. 2. The line 71 in FIG. 2 (1) shows the dependence of the absorption amount Y (II ) on the magnetic field 2, and the line 2 in FIG. II)/dH. Magnetic resonance absorption is
Amount of microwave absorption Y (H) by ions or atoms in a substance (hereinafter referred to as magnetic ions for simplicity)
is measured against the magnetic field H. The dependence of the absorption amount Y(I() on the magnetic field 1-1 is simply shown in Figure 2 (1). Generally, in magnetic resonance absorption, from the viewpoint of sensitivity, the absorption amount Y(I() is Without directly measuring H), the absorption amount Y (
dY()I)/dll, which is the first computation of H), is measured. Important springs in magnetic resonance absorption are the resonance magnetic field I-1 and the absorption #1 width ΔII shown in FIG. -11, Resonant magnetic field II O has a Lande g~1 factor order relationship.

11; Blank constant ν; Frequency of microwave used β; Bohr magneton It is.

In one shell, in magnetic resonance absorption, the resonant magnetic field Ll. The above factor can be determined from the measured value of .

The magnetic ions added as additives interact with the surrounding host ions (or primitive r), and this interaction can be observed by magnetic resonance absorption of the magnetic ions. Therefore, by measuring the Be factor and absorption line width ΔH by magnetic resonance absorption, the crystallinity of the parent material can be evaluated. - FIG. 1 is a sectional view showing an example of the structure of a silicon Si-based three-dimensional integrated circuit (hereinafter abbreviated as three-dimensional circuit) 21 according to an embodiment of the present invention. In the three-dimensional circuit 21, for example, in the P-type silicon substrate 22, a negative conductive type region is formed.
'Insulation) +:j l) 5 selectively shaped J & 4,
The electrodes 28 +29.30 are formed by covering the through holes 26.27 of the insulation J25.
Pbe 11 silicon jlH&22, u” type region 2; U, 24, insulating layer 25J9 and electric (small 28
is a field-effect type F-run star (1Ll・, IP1ΣT
(abbreviated as).

In addition, an insulating layer 31 is formed by covering the electrode 2 (1129,3
L! X: ()≦X≦1) A single crystal conductor layer (-1P type) is formed (forms a silicon growth layer 22a). As a method for forming the silicon growth layer 22, for example, Amorphous silicon 84 on 1-1 of 11
Also, the polycrystalline silicon layer is processed by sputtering, etc.
Formation using the l method [7], followed by annealing using a laser beam or the like. On top of this annealing, I
Portion Amol 7T silicon layer 1, 1 is polycrystalline silicon) (41,t Q1 prefecture product, silicon growth layer 22a
can be obtained.

In the same manner, 14. layer 221],)1+desired area p
3a, 24 a; 23 +1, 24 b, insulating layer 2Sa
, 25b, through hole 2611+ 27 a; 2 B! +,
2711, electrodes 28 a, 29 a, 3 +) a:
28 lJ, 2911. :(il LjH and the insulating layer 11a are formed in the following order: 2, ζ In the invention, the P-type conductor 1 is plate 22t; J, and the silicon growth layers 22a, 221] But it is fruitful even if it is 1.
23.24.;23
a, 24a; 2311.24+1 may be of type I)+2. In the present invention, 1 is shown in FIG. 'The reaction layer 35, 36 is formed by adding an additive. These reaction layers 35 and 36 are formed simultaneously with the formation of the amorphous 7Tλ layer or the polycrystalline layer. 81), Bismuth Bi1 Aluminum Uno, Aga, Galiumi (1a1 Indium In, Manganese Mn
, g Fe, nickel Ni, and various +f materials can be used.

These additives are included in the semiconductor peripheral plate 22 and silicon growth/M22a, 221+, or ■) mold soil 11 i soil N7.
- In each case I'': Depending on the month, if the selector is J, I''.

In either case, 1. Magnetic resonance absorption of 1 and 1 is observed in the above additives. The crystallinity of the silicon grown layer can be evaluated by comparing the magnetic resonance absorption data of +1V and the magnetic resonance absorption data of the silicon growth layer.

tjS3 FIG. 3 (1) and FIG. 3 (2) show the molecular configuration 6 when the crystallinity of the silicon grown M22a, 22b is good and bad, respectively, t-tQ+. Third
In FIG. 1, for example, silicon molecules 37 in the silicon growth layer 22a follow a normal crystal structure (i), and an additive molecule 38 replaces one silicon molecule 37 in this crystal structure. In Figure 3 (2), silicon J & It
The silicon molecules 37 of the layer 22a deviate from the normal crystal structure, and the additive molecules -38 are in an irregular position j6 relationship with the silicon molecules 37.

Crystalline? Good ill, current magnetic resonance absorption I: Seki 12, first = 8- ・1 Figure (1) Noah in, (' 3 te, 1, absorption amount 'l' (II) d Y, old I If, f
f121''<](1)ノ54>, e1ノ, l:)na-Jl: 1, which is the differential of a curve close to the normal distribution curve, that is, the absorption line width ΔII changes to the current 11 objective.Crystallinity Bad 1. The absorption line width Δ11 changes irregularly, as shown in the line 1417 in Fig. 4 (2), and the resonance magnetic field I1.. also changes. 11, Figure 4 (
1) resonant magnetic field +1. , , and a different resonant magnetic field I1. I2
becomes. 1 In this way, the crystallinity of the general 1:1″J body is
Magnetic resonance absorption of additives! v line width ΔII and iq 6
-Factor- is left on the left. .

Next, the silicon growth layer (-selection of additives to be added) will be described below. [Silicon Go, Next] 1- In the circuit 21, Fire - For example, as shown in FIG.
]1ffl+area 23124:23a? 24a;2
3b, 24b formation f Yume, sotl each type 11 additive,
and 1) Use of desired additives 1. Therefore, depending on the type of additives, l<,>, magnetic resonance absorption of these additives may be observed9. ．． Mu, 221. i reaction layer 35, 3['
The additive used to form L-method is for crystal evaluation, and is preferably of a different type from the above-mentioned additives. By selecting different types of materials, magnetic resonance absorption of the signal! It is possible to prevent n-duplication.

Furthermore, when the types of additives used to form the reaction layers 35 and 36 are different, their magnetic resonance absorption signals do not overlap, so that the crystallinity of the silicon grown RIs 22a and 22b can be evaluated simultaneously. In the above-described embodiment, the three-dimensional circuit 21 constitutes a field effect transistor, but it may also constitute an element that converts light into electricity.

Effects By intentionally adding an additive whose magnetic resonance absorption can be observed to the semiconductor layer, the crystallinity of the semiconductor layer can be evaluated quickly and can be evaluated even during the manufacturing process. Therefore, the yield in the mass production process can be significantly improved.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a three-dimensional circuit 21 according to an embodiment of the present invention;
Fig. 2 is a graph showing a magnetic resonance absorption curve, Fig. 3 is a drawing showing the molecular arrangement when the additive 35 is added to the silicon growth layer 22a of the two-dimensional circuit 21, and Fig. 4 is a graph showing the magnetic resonance absorption curve of the crystal. FIG. 5, which is a diagram for explaining the dependence on gender, is a cross-sectional view of the three-dimensional circuit 1 of the prior art. 21... Three-dimensional circuit, 22... P-type silicon layer, 2
3.24; 23a, 24a; 23b, 24b-n+
Mold region 25...Insulating layer, 22a, 22b...Silicon growth layer Agent Patent attorney Number of strokes Keiichi 1st figure 2nd figure

Claims (1)

[Claims] A semiconductor layer formed on a substrate, comprising: a conductive type region formed by selectively adding a predetermined type of additive; and a semiconductor layer formed by selectively adding a predetermined type of additive; 1. A semiconductor device comprising such a semiconductor layer having a reaction region in which a substance is selectively added at a concentration higher than that which causes magnetic resonance absorption due to electromagnetic waves.