Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45572—Cooled nozzles
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B08—CLEANING
  • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
  • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
  • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Definitions

• the present invention relates to a substrate processing apparatus and a cleaning method for the substrate processing apparatus.
• a film forming apparatus for forming a thin film on a semiconductor wafer (hereinafter simply referred to as “wafer”), a film forming apparatus for forming a thin film chemically is known.
• a thin film is formed on a wafer by generating a radical from a processing gas by plasma or the like.
• the reaction products adhere to the inner wall of the processing chamber after the thin film is formed on the wafer, the susceptor disposed in the processing chamber, and the like. If a thin film is formed on a wafer in a state where the reaction product adheres to the inner wall of the processing chamber, the reaction product may peel off from the inner wall of the processing chamber and contaminate the wafer. In order to suppress such a situation, the inside of the processing chamber is periodically cleaned to remove reaction products attached to the inner wall of the processing chamber.
• the cleaning inside the processing chamber uses various methods of force S, one of which is to generate radicals in an external chamber installed outside the processing chamber, and to generate radicals in the processing chamber.
• force S one of which is to generate radicals in an external chamber installed outside the processing chamber, and to generate radicals in the processing chamber.
• the liquid is supplied to the processing chamber to perform talling in the processing chamber.
• An object of the present invention is to provide a substrate processing apparatus capable of suppressing deactivation of active species in a transport pipe and a cleaning of the substrate processing apparatus.
• Processing container an external container disposed outside the processing container, a cleaning source gas supply system for supplying a cleaning source gas into the external container, and a tarry source supplied into the external container.
• An active species generation mechanism that excites the gas and generates active species for cleaning the inside of the processing vessel from the cleaning source gas, and transports the active species generated in the external vessel into the processing vessel It has a transport pipe and a cooling mechanism for cooling the inner wall surface of the transport pipe.
• the “active species” of the present invention includes radicals and ions. Since the substrate processing apparatus of the present invention includes such a cooling mechanism, it is possible to suppress the deactivation of the active species in the transport pipe.
• Another substrate processing apparatus of the present invention includes: a processing container for storing a substrate; an external container disposed outside the processing container; a cleaning source gas supply system for supplying a cleaning source gas into the external container; An active species generating mechanism that excites the raw material gas supplied into the outer container and generates active species for cleaning the inside of the processing container from the cleaning raw material gas;
• the inner wall surface is formed of a substance that hardly reacts with the active species, and includes a transport pipe for transporting the active species generated in the outer container into the processing container. Since the substrate processing apparatus of the present invention is provided with such a transport pipe, it is possible to suppress the deactivation of active species in the transport pipe.
• the transport pipe may be formed of at least two kinds of substances. By constructing the transport piping with at least two types of substances, even if substances other than the substances forming the inner wall surface of the transport pipe are easily reactive with active species, loss of the active species in the transport pipe will occur. Activity can be suppressed.
• the transport pipe may be made of one type of substance. By configuring the transport pipe with one type of substance, deactivation of active species in the transport pipe can be reliably suppressed.
• the cleaning raw material gas may be a fluorine-containing gas
• the inner wall surface of the transport pipe may be made of a substance containing any of A1, F, and Cr.
• the fluorine-containing gas include NF 3 , SF 6 , CF 4 , C 2 F 6 , CHF 3 , HF, F 2 , and CF 3 COOH.
• the material containing A 1 for example, solid A 1, A 1 is anodized, and A 1 2 0 3 and the like.
• the substance containing F include a fluororesin such as polytetrafluoroethylene (PTFE).
• PTFE polytetrafluoroethylene
• the material containing C r for example, C r 2 0 3 or the like.
• the cleaning raw material gas may be a chlorine-containing gas
• the inner wall surface of the transport pipe may be made of a substance containing any of Si and C.
• a chlorine-containing gas for example, HC 1, C 1 2, ⁇ Pi BC 1 3, etc. can be mentioned, et al are.
• Ru include S i ⁇ 2.
• the substance containing C include, for example, DLC (Diamond Like Carbon).
• the cleaning method for a substrate processing apparatus includes: a transport pipe cooling step of cooling an inner wall surface of a transport pipe disposed between a processing chamber of the substrate processing apparatus and an external container; A cleaning raw material gas supply process for supplying gas, and an active species generation that excites the cleaning raw material gas supplied to the external container (2) to generate active species for cleaning the inside of the processing container from the cleaning raw material gas And an active species transporting step of transporting active species generated in the outer container into the processing container via a transport pipe. Since the cleaning method of the substrate processing apparatus of the present invention includes such a transportation pipe cooling step, it is possible to suppress deactivation of active species in the transportation pipe.
• a cleaning method of another substrate processing apparatus includes a cleaning raw material gas supply step of supplying a cleaning raw material gas into an external container, and a cleaning raw material supplied to the external container.
• FIG. 1 is a schematic configuration diagram of a film forming apparatus according to the first embodiment.
• FIG. 2 is a flowchart showing a flow of film formation performed by the film formation apparatus according to the first embodiment.
• FIG. 3 shows a flow of cleaning performed by the film forming apparatus according to the first embodiment. It is a flowchart showing this.
• FIG. 4A to FIG. 4D are schematic process diagrams of the cleaning according to the first embodiment.
• FIG. 5 is a schematic configuration diagram of a film forming apparatus according to the second embodiment.
• FIG. 6 is a flowchart showing the flow of the cleaning performed by the film forming apparatus according to the second embodiment.
• FIG. 7 is a schematic process diagram of cleaning according to the second embodiment.
• Figure 8 is c 9 is a schematic vertical cross-sectional view of the transport pipe according to the third embodiment implementing the c invention is a schematic vertical cross-sectional view of the transport pipe according to the fourth embodiment Best form for
• FIG. 1 is a schematic configuration diagram of a film forming apparatus according to the present embodiment.
• a film forming apparatus 1 includes a processing chamber 2 formed of, for example, aluminum / stainless steel.
• the treatment chamber 2 may be subjected to a surface treatment such as an alumite treatment.
• An opening 2A is formed on the side of the processing chamber 2, and when the wafer W is loaded into the processing chamber 2 or the wafer W is unloaded from the processing chamber 2 near the opening 2A.
• a gate valve 3 that opens and closes is installed.
• a substantially disk-shaped susceptor 4 on which the wafer W is placed is disposed in the processing champer 2.
• the susceptor 4 is formed, for example, from ceramic task such as A 1 N and A 1 2 0 3.
• An electrode 5 serving as a lower electrode is provided in the susceptor 4. The electrode 5 is grounded.
• a heater 6 for heating the susceptor 4 to a predetermined temperature is provided in the susceptor 4. Has been established. When a current flows through the heater 6, the susceptor 4 is heated to a predetermined temperature, and the wafer W placed on the susceptor 4 is heated to a predetermined temperature.
• the three of the susceptor 4 are formed in the holes 4 A is vertical Direction for raising and lowering the the wafer W, holes 4 A to be inserted wafer lift pins 7 are disposed respectively below the hole 4 A ing.
• the wafer elevating pins 7 are fixed to the wafer elevating pin support 8 so that the wafer elevating pins 7 stand upright.
• An air cylinder 9 is fixed to the wafer lifting pin support 8. When the rod 9A of the air cylinder 9 is retracted by the driving of the air cylinder 9, the wafer elevating pins 7 are lowered, and the wafer W is placed on the susceptor 4. Further, when the air cylinder 9 is driven to extend the opening 9A, the wafer elevating pins 7 are raised, and the wafer W is separated from the susceptor 4.
• An elastic bellows 10 that covers the rod 9A is disposed inside the processing chamber 2. By covering the rod 9A with the bellows 10, the airtightness in the processing chamber 2 is maintained.
• a heater 11 for heating the processing chamber 2 to a predetermined temperature is wound outside the processing chamber 2.
• the processing chamber 2 is heated to a predetermined temperature.
• An opening is formed in the upper part of the processing chamber 2.
• a shower head 12 that supplies Si (OC 2 H 5) 4 (tetraethoxysilane: TEOS) and O 2 toward the susceptor 4 and acts as an upper electrode is introduced.
• a high frequency power supply 13 is connected to the shower head 12.
• TEOS and O 2 are supplied into the processing chamber 2 and the high-frequency power supply 13 is operated, a high-frequency voltage is applied between the shower head 12 and the electrode 5, and the shower head 1 2 Plasma is generated between the susceptor and the susceptor.
• Head 1 2 to shower it has become a T EO S TEOS supply unit 1 2 A supplies, 0 2 was divided into an O 2 supply unit 1 2 B supplies structure. With such a structure of the shear head 12, TEOS and O 2 are mixed outside the shear head 12.
• TEOS supply holes for supplying TEOS are formed in the TEOS supply section 12A. Further, likewise 0 2 supply unit 1 2 B, a number of O 2 supply hole you supplied is formed a 0 2.
• a TEOS supply system 20 that supplies TEOS to the TEOS supply unit 12A is connected to the TEOS supply unit 12A. Moreover, 0 the second supply unit 1 2 B, O 2 supply unit 1 2 0 2 supply system 3 0 supplying O 2 to B are connected.
• the TEOS supply system 20 includes a TEOS supply source 21 containing TEOS.
• the TEOS supply source 21 is connected to a TEOS supply pipe 22 having one end connected to the TEOS supply section 12A.
• a valve 23 and a mass flow controller (MFC) 24 for adjusting the flow rate of TEOS are interposed in the TEOS supply pipe 22. By opening the valve 23 with the mass flow controller 24 adjusted, TEOS is supplied from the TEOS supply source 21 to the TEOS supply unit 12A at a predetermined flow rate.
• MFC mass flow controller
• O 2 supply system 3 0 has a O 2 source 3 1 containing the O 2.
• the O 2 supply source 31 is connected to an O 2 supply pipe 32 having one end connected to the O 2 supply unit 12 B.
• a valve 33 and a mass flow controller 34 for adjusting the flow rate of O 2 are interposed.
• 0 2 supply 3 0 to 1 at a predetermined flow rate 2 is supplied to the 0 2 supply unit 1 2 B.
• An exhaust system 40 for exhausting the inside of the processing chamber 2 is connected to the bottom of the processing chamber 2.
• the exhaust system 40 includes an exhaust pipe 41 to which one end is connected to a pressure reducing pump (not shown). Check that the vacuum pump (not shown) Thus, the inside of the processing chamber 2 is exhausted through the exhaust pipe 41.
• An auto pressure controller (APC) 42 for controlling the pressure in the processing chamber 2 is interposed between the processing chamber 2 and the exhaust pipe 41. By adjusting the conductance by the auto-pressure controller 42, the pressure in the processing chamber 2 ⁇ is controlled to a predetermined pressure.
• the NF 3 supply system 52 includes an NF 3 supply source 53 containing NF 3 .
• the NF 3 supply source 53 is connected to an NF 3 supply pipe 54 whose one end is connected to the external chamber 51.
• the NF 3 supply pipe 54 has a valve 55 and a mass flow controller (MFC) 56 for adjusting the flow rate of the NF 3 interposed therebetween.
• MFC mass flow controller
• a radical generating mechanism 57 that excites NF 3 supplied into the external chamber 51 to generate F radicals from NF 3 is provided.
• the radical generating mechanism 57 is mainly composed of a copper wire 58 wound around the external chamber 51 and a high-frequency power source 59 connected to the copper wire 58.
• a high-frequency current is supplied to the copper wire 58 by the operation of the high-frequency power supply 59, the NF 3 supplied into the external chamber 51 is excited to generate F radicals.
• F radicals F ions and the like are also generated.
• a transport pipe 60 for transporting F radicals generated in the external chamber 51 to the processing chamber 2 is provided between the external chamber 51 and the processing chamber 2.
• Transportation pipeline 6 0 of this embodiment the shape of S I_ ⁇ 2 Has been established.
• a Peltier element 61 for cooling the inner wall surface of the transport pipe 60 is attached to the outer wall surface of the transport pipe 60. When a current flows through the Peltier element 61, the temperature of the Peltier element 61 decreases, and the inner wall surface of the transport pipe 60 is cooled to a predetermined temperature.
• the transport pipe 60 is provided with a gut valve 62 which is closed at the time of film formation and opened at the time of cleaning.
• a flange 60A is formed at the end of the transport pipe 60 on the processing chamber 2 side.
• Annular heat insulating members 65 and 66 are interposed between the flange 60 A and the interposition member 64 and between the flange 60 A and the processing chamber 2, respectively. By interposing the heat insulating members 65 and 66 respectively, it becomes difficult for heat to be transmitted from the processing champ 2 to the transport pipe 60.
• Seal members 67 and 68 are interposed between the flange 60 A and the heat insulating member 66 and between the processing chamber 2 and the heat insulating member 66, respectively. The airtightness in the processing chamber 2 is maintained by interposing the seal members 67 and 68.
• FIG. 2 is a flowchart showing a flow of film formation performed by the film forming apparatus 1 according to the present embodiment.
• a vacuum pump (not shown) is operated to evacuate the processing chamber 2 (step 10l). C Then, current flows through the heaters 6, 11 Then, the susceptor 4 and the processing channel 2 are heated (step 102).
• the pressure in the processing chamber 2 drops to a predetermined pressure, and the temperature of the susceptor 4 stabilizes at about 350 to 400 ° C and the temperature of the processing chamber 2 stabilizes at about 100 ° C.
• the gate valve 3 is opened, the transfer arm (not shown) holding the wafer W is extended, and the wafer W is loaded into the processing chamber 2 (Step 103).
• the transfer arm is retracted, and the wafer W is placed on the wafer elevating pins 7.
• the wafer elevating pins 7 are lowered by driving the air cylinder 9, and the wafer W is placed on the susceptor 4 (Step 104).
• valves 23 and 33 are opened while the pressure in the processing chamber 2 is maintained at about 7 ° Pa, and the flow rate of TEOS is set at about 100 sccm. There about 1 0 0 0 ⁇ 2 0 0 sccm flow 2 is supplied into the processing chamber 2 is supplied into the processing chamber 2 (step 1 0 5).
• Step 106 a high frequency voltage of 13.56 MHz is applied between the shower head 12 and the electrode 5 from the high frequency power supply 13.
• a high-frequency voltage is applied between the shear head 12 and the electrode 4, so that the shower head 12 and the susceptor 4 During this time, plasma is generated, and a SiO 2 film is formed on the wafer W.
• valve 2 3, 3 3 is closed, Ding £ 0 3 with the supply of ⁇ Pi 0 2 is stopped both the high-frequency voltage is stopped, the formation of S io 2 film is terminated (Step 107).
• FIG. 3 is a flowchart showing the flow of the cleaning performed by the film forming apparatus 1 according to the present embodiment
• FIGS. 4A to 4D are schematic processes of the cleaning according to the present embodiment.
• a vacuum pump (not shown) is operated to evacuate the processing chamber 2 (step 201A).
• an electric current is applied to the heaters 6 and 11 to heat the susceptor 4 and the processing chamber 2, and an electric current is applied to the Peltier element 61 as shown in FIG.
• the walls are cooled (Step 202A).
• C The pressure in the processing chamber 2 is maintained at about 100 OPa, the temperature of the susceptor 4 is about 200 ° C, and the temperature of the processing chamber 2 is about 1
• the valve 55 is opened, and the flow rate of NF 3 is about 500 sccm as shown in Figure 4B.
• NF 3 is supplied together with a carrier gas.
• the high-frequency power supply 59 is operated, and as shown in FIG. High-frequency current flows (step 204 A).
• NF 3 is supplied into the external chamber 51
• a high-frequency current is applied to the copper wire 58, whereby the NF 3 in the external chamber 51 is excited and radicals are generated.
• the generated F radicals are pushed out by the exhaust gas in the processing chamber 2 and the supplied NF 3 , and are transported into the processing chamber 2 through the transport pipe 60 as shown in FIG. 4D (step 2). 0 5 A).
• F radical When transported into the processing chamber 2, F radicals react with SiO 2 adhering to the inner wall surface of the processing chamber 2 to generate Si F 4 . Since the generated SiF 4 is vaporized, it is quickly discharged from the processing chamber 2 by exhaust. NF 3 is always supplied during the tally jungle.
• Step 206A After a lapse of a predetermined time, the valve 55 is closed, the supply of the high-frequency current is stopped, and the cleaning in the processing chamber 2 is completed.
• F radicals are transported while cooling the inner wall surface of transport pipe 60, so that the deactivation of F radicals in transport pipe 60 can be suppressed. That is, one of the causes of F radical deactivation in the transport pipe is that the F radical collides with the transport pipe and the F radical reacts with the transport pipe.
• the temperature decreases, the number of substances exceeding the activation energy decreases, so that the reaction becomes difficult. Therefore, by cooling the inner wall surface of the transport pipe 60, the reaction of the F radical with the transport pipe 60 becomes difficult, and the deactivation of the F radical in the transport pipe 60 is suppressed.
• Equation (1) When ⁇ , ⁇ F , and ⁇ a are constant and the etch rate at a temperature of 120 ° C is compared with that at a temperature of 0 ° C using Equation (1), the temperature is 0.
• the etch rate for the same case is about 1/10 of the etch rate for a temperature of 120 ° C. From this result, by cooling the inner wall surface of the transportation pipe 60, It can be said that the deactivation of the F radical is suppressed. Equation (1) can be applied to the case where another substance is used.
• FIG. 5 is a schematic configuration diagram of a film forming apparatus according to the present embodiment.
• a cooling pipe 71 for cooling the inner wall surface of the transport pipe 60 is wound around the transport pipe 60. Both ends of the cooling pipe 71 are connected to a cooling tank 72 storing cooling water.
• a pump 73 for pumping cooling water from a cooling tank 72 is interposed in the cooling pipe 71. By operating the pump 73, the cooling water in the cooling tank 72 is pumped out, and the cooling water circulates in the cooling pipe 71.
• the Peltier element 61 is not attached to the outer wall surface of the transportation pipe 60.
• FIG. 6 is a flowchart showing the flow of the cleaning performed in the film deposition apparatus 1 according to the present embodiment
• FIG. 7 is a schematic process diagram of the cleaning according to the present embodiment.
• valve 55 is opened, and NF 3 is supplied into the external chamber 51 (step 203B).
• the high-frequency power supply 59 is operated, and a high-frequency current flows through the copper wire 58 (step 204B).
• the generated F radicals are pushed out by the exhaust gas in the processing chamber 2 and the supplied NF 3 , and are transported into the processing chamber 2 via the transport pipe 60 (step 205B).
• Step 206B After a lapse of a predetermined time, the valve 55 is closed, the supply of the high-frequency current is stopped, and the cleaning of the inside of the processing chamber 2 is completed (Step 206B).
• FIG. 8 is a schematic vertical sectional view of the transport pipe according to the present embodiment.
• the transportation pipeline 6 0 composed of a S i 0 2 formed from S i O 2 pipe 6 0 B and PTFE layer 6 formed from F radicals react with hard PTFE 0 C Have been.
• the PTFE layer 60 C is coated on the inner wall surface of the SiO 2 tube 60 B.
• FIG. 9 is a schematic vertical sectional view of the transport pipe according to the present embodiment.
• the transport piping 60 is formed from A1.
• the transportation pipe 60 is formed from A1.
• F radicals are not deactivated in the transportation pipe 60. Be suppressed. That is, A 1 reacts with the F radical to produce a reaction S, and A 1 reacts with the F radical to produce aluminum fluoride.
• aluminum fluoride has low reactivity with F radical.
• a 1 reacts with the F radical to form a thin film of aluminum fluoride on the inner wall surface of the transport pipe 60, the activity of the F radical is less likely to be lost. Therefore, even when the transport pipe 60 is formed from A 1, the deactivation of F radical in the transport pipe 60 is suppressed.
• plasma is generated to generate F radicals, but F radicals may be generated by light irradiation.
• SiO 2 adhering to the inner wall surface or the like of the processing chamber is removed, but Ti N may be removed.
• C 1 radicals are generated to remove T i N.
• C 1 radical is, for example, can be generated from any such HC 1, C 1 2, and BC 1 3.
• the wafer W is used, but a glass substrate may be used.
• the film forming apparatus has been described, the present invention is not limited to the film forming apparatus but can be applied to an etching apparatus. Industrial applicability
• the substrate processing apparatus and the method for cleaning a substrate processing apparatus according to the present invention can be used in the semiconductor manufacturing industry.

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• Metallurgy (AREA)
• Organic Chemistry (AREA)

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Citations (7)

• 2003
  • 2003-08-28 AU AU2003261791A patent/AU2003261791A1/en not_active Abandoned
  • 2003-08-28 WO PCT/JP2003/010938 patent/WO2004020694A1/ja not_active Application Discontinuation
  • 2003-08-29 TW TW92124043A patent/TWI227511B/zh not_active IP Right Cessation

Patent Citations (7)

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