WO2003098701A1 - Diode varactor semi-conductrice et circuit oscillant la comprenant - Google Patents

Diode varactor semi-conductrice et circuit oscillant la comprenant Download PDF

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Publication number
WO2003098701A1
WO2003098701A1 PCT/EP2003/005132 EP0305132W WO03098701A1 WO 2003098701 A1 WO2003098701 A1 WO 2003098701A1 EP 0305132 W EP0305132 W EP 0305132W WO 03098701 A1 WO03098701 A1 WO 03098701A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
varactor
varactor according
voltage
semiconductor varactor
Prior art date
Application number
PCT/EP2003/005132
Other languages
German (de)
English (en)
Inventor
Wolfgang Winkler
Karl-Ernst Ehwald
Bernd Heinemann
Original Assignee
Ihp Gmbh-Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ihp Gmbh-Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik filed Critical Ihp Gmbh-Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik
Publication of WO2003098701A1 publication Critical patent/WO2003098701A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Abstract

L'invention concerne une diode varactor semi-conductrice comportant une première capacité (103, 107) asservie en tension et une deuxième capacité (103, 109) asservie en tension et couplée en série avec la première. Ces deux capacités asservies en tension comprennent chacune une électrode collectrice (107, 109) ainsi qu'une zone semi-conductrice commune (103), par laquelle lesdites capacités asservies en tension sont couplées en série. Le couplage en série des capacités asservies en tension permet de disposer les électrodes collectrices (107, 109) à faible distance l'une de l'autre et de réduire ainsi le cheminement du signal dans son ensemble.
PCT/EP2003/005132 2002-05-15 2003-05-15 Diode varactor semi-conductrice et circuit oscillant la comprenant WO2003098701A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10222764.0 2002-05-15
DE2002122764 DE10222764B4 (de) 2002-05-15 2002-05-15 Halbleitervaraktor und damit aufgebauter Oszillator

Publications (1)

Publication Number Publication Date
WO2003098701A1 true WO2003098701A1 (fr) 2003-11-27

Family

ID=29285650

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/005132 WO2003098701A1 (fr) 2002-05-15 2003-05-15 Diode varactor semi-conductrice et circuit oscillant la comprenant

Country Status (2)

Country Link
DE (1) DE10222764B4 (fr)
WO (1) WO2003098701A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323763B2 (en) 2004-07-08 2008-01-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having an improved voltage controlled oscillator
WO2018194743A1 (fr) * 2017-04-21 2018-10-25 Qualcomm Incorporated Structures de condensateur variable ayant une résistance de canal réduite

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ2012939A3 (cs) * 2012-12-20 2014-08-20 Vysoké Učení Technické V Brně Elektronicky přeladitelné oscilátory s fraktálními prvky

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541097A (fr) * 1967-08-23 1968-10-04 Europ Des Semiconducteurs Soc Perfectionnements aux diodes semiconductrices à capacité variable et à leurs procédés de fabrication
US4005466A (en) * 1975-05-07 1977-01-25 Rca Corporation Planar voltage variable tuning capacitors
GB2060250A (en) * 1979-03-12 1981-04-29 Clarion Co Ltd Controllable Semiconductor Capacitors
EP0169122A1 (fr) * 1984-07-03 1986-01-22 Thomson-Csf Elément à capacité variable, commandable par une tension continue
US5220194A (en) * 1989-11-27 1993-06-15 Motorola, Inc. Tunable capacitor with RF-DC isolation
US5283462A (en) * 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
EP0893831A1 (fr) * 1997-07-23 1999-01-27 STMicroelectronics S.r.l. Condensateur à haute tension
US6100770A (en) * 1997-09-11 2000-08-08 Telefonaktiebolaget Lm Ericsson (Publ) MIS transistor varactor device and oscillator using same
EP1113498A2 (fr) * 1999-12-29 2001-07-04 Motorola, Inc. Condensateur variable en fonction de la tension avec C-V linéarité améliorée

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2327810B (en) * 1997-02-07 1999-06-09 United Microelectronics Corp Manufacturing integrated circuit devices with different gate oxide thicknesses

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541097A (fr) * 1967-08-23 1968-10-04 Europ Des Semiconducteurs Soc Perfectionnements aux diodes semiconductrices à capacité variable et à leurs procédés de fabrication
US4005466A (en) * 1975-05-07 1977-01-25 Rca Corporation Planar voltage variable tuning capacitors
GB2060250A (en) * 1979-03-12 1981-04-29 Clarion Co Ltd Controllable Semiconductor Capacitors
EP0169122A1 (fr) * 1984-07-03 1986-01-22 Thomson-Csf Elément à capacité variable, commandable par une tension continue
US5220194A (en) * 1989-11-27 1993-06-15 Motorola, Inc. Tunable capacitor with RF-DC isolation
US5283462A (en) * 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
EP0893831A1 (fr) * 1997-07-23 1999-01-27 STMicroelectronics S.r.l. Condensateur à haute tension
US6100770A (en) * 1997-09-11 2000-08-08 Telefonaktiebolaget Lm Ericsson (Publ) MIS transistor varactor device and oscillator using same
EP1113498A2 (fr) * 1999-12-29 2001-07-04 Motorola, Inc. Condensateur variable en fonction de la tension avec C-V linéarité améliorée

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323763B2 (en) 2004-07-08 2008-01-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having an improved voltage controlled oscillator
DE102005030658B4 (de) * 2004-07-08 2015-01-15 Mitsubishi Denki K.K. Halbleitervorrichtung mit einer verbesserten spannungsgesteuerten Oszillatorschaltung
WO2018194743A1 (fr) * 2017-04-21 2018-10-25 Qualcomm Incorporated Structures de condensateur variable ayant une résistance de canal réduite

Also Published As

Publication number Publication date
DE10222764A1 (de) 2003-11-27
DE10222764B4 (de) 2011-06-01

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