WO2003095999A2 - Sensoranordnung zum messen einer gaskonzentration - Google Patents
Sensoranordnung zum messen einer gaskonzentration Download PDFInfo
- Publication number
- WO2003095999A2 WO2003095999A2 PCT/DE2002/004207 DE0204207W WO03095999A2 WO 2003095999 A2 WO2003095999 A2 WO 2003095999A2 DE 0204207 W DE0204207 W DE 0204207W WO 03095999 A2 WO03095999 A2 WO 03095999A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sensor arrangement
- gas
- arrangement according
- electrode structures
- electrode
- Prior art date
Links
- 238000009413 insulation Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005259 measurement Methods 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 3
- 239000012774 insulation material Substances 0.000 claims abstract 12
- 239000007789 gas Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910021426 porous silicon Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000010354 integration Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002847 impedance measurement Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
Definitions
- the invention relates to a sensor arrangement for measuring a gas concentration, in particular of carbon monoxide (CO), hydrogen (H 2 ), nitrogen oxide (NO x ) and / or hydrocarbons.
- a sensor arrangement for measuring a gas concentration, in particular of carbon monoxide (CO), hydrogen (H 2 ), nitrogen oxide (NO x ) and / or hydrocarbons.
- Integrated sensor arrangements with a high sensitivity to these gases generally indicate ! a gas-sensitive layer of metal oxides, which is formed by means of heat conductor structures on z. B. heated several hundred degrees Celsius and evaluated electrically, mostly resistively, via electrode structures.
- the electrode layers are conventionally structured laterally in such a way that an interdigital finger structure results, in which the two electrodes intermesh like a comb.
- the gas-sensitive layer is provided in a meandering manner, so that the large electrical surfaces of the electrodes result in a low total electrical resistance between the electrodes.
- a high level of integration is desired for cost-effective production with little material and small space requirements. Furthermore, with smaller dimensions of the gas-sensitive layer between the electrodes, the number of grain boundaries within the gas-sensitive material is reduced, so that more precise measurements are possible.
- the distances between the electrodes are determined by the structural accuracy of the semiconductor process used. With known ⁇ -mechanics this is above 1 ⁇ m, with CMOS processes below 1 ⁇ m. However, higher integration is difficult to achieve.
- writing processes for example using an electron beam imagesetter, structure widths can also be realized significantly below 1 ⁇ m; however, such methods are operationally complex and costly.
- the sensor arrangement according to the invention with the features of claim 1 offers, in particular, the advantage that it can be produced with relatively little effort, in particular also inexpensively, and nevertheless enables precise measurements. 'Advantageously, in this case obtained multipara- metrale sensor signals.
- the electrodes are thus designed as electrode structures in vertically spaced electrode layers. Their contact distance is thus determined by the layer thickness of the one or more insulation layers lying between them.
- layer thicknesses and thus electrode spacings of a few nm can be realized using common methods, for example CVD, PVD.
- CVD chemical vapor deposition
- PVD physical vapor deposition
- essential disadvantages of the conventional only laterally structured sensor arrangements can be partially or completely avoided and also small contact distances can be achieved with relatively little effort and conventional technologies.
- a high level of integration can be achieved with a small space requirement and low material expenditure.
- nanostructured materials can advantageously be used for the gas-sensitive layer, in which only a few crystallites or a single crystallite is provided between the electrodes, so that better measuring properties, in particular with regard to the sensitivity and selectivity of the gases and gas concentration ranges in question, can be achieved. Due to the achievable low layer thicknesses of the gas sensitive layer, which nevertheless has a large surface against good dynamic response can also be achieved.
- Another advantage according to the invention is that in addition to the vertical structuring, a lateral structuring can be formed. As a result, higher integration can be achieved with less space.
- the additional formation of further electrode layers can on the one hand increase the accuracy of the measurement; in particular, the selectivity can be increased by comparing the various signals and further data, in particular statements about the state of the sensor, for example its age and the degree of its poisoning, can be obtained.
- a free space in a central area of the substrate allows a membrane which is largely decoupled thermally from the substrate to be formed from the insulation layers, the gas-sensitive layer, the electrodes and the heat conductor structure.
- the insulation layers can e.g. B. from silicon nitride (Si 3 N 4 ), silicon oxide, silicon oxynitride, silicon carbide or combinations of these materials, whereby an inexpensive formation of a membrane under tension is achieved.
- the thermal insulation can also be provided by a cavity in the substrate or the use of a layer of porous substrate, eg. B. porous silicon can be achieved
- FIG. 1 shows a vertical section through a sensor arrangement according to an embodiment of the invention
- FIG. 2 shows a vertical section through a sensor arrangement according to a further embodiment of the invention
- a first insulation layer 4, a second insulation layer 6, a third insulation layer 8 and a fourth insulation layer 10 are formed on a silicon substrate 2.
- a left and right second electrode structure 14, 15, for example made of a metal are formed at a distance from one another in the lateral direction and extend parallel in the longitudinal direction.
- Heating conductor structures 7, 11 are provided laterally outside the second electrode structures.
- a left and a right first electrode structure 12, 13 are formed in the fourth insulation layer 10 via the third insulation layer 8.
- a recess 9 is provided in the third and fourth insulation layers, which partially exposes the electrode structures 12, 13, 14, 15.
- a gas-sensitive layer 16 made of, for example, a metal oxide covers this cutout and part of the surface of the fourth insulation layer 10, as a result of which all the electrode structures are covered with respect to the exterior.
- the layers 11 to 16 extend parallel to one another in the longitudinal direction. Due to the symmetrical arrangement of the heating conductor structures 7 and 11, uniform heating of the central area with electrodes and gas-sensitive layer is achieved.
- a space 18 is formed in the substrate 2 for thermal decoupling, so that the central region forms a membrane 17.
- a vertical distance d between the first electrode structures 12, 13 and second electrode structures 14, 15 is, for example, 2 nm to 10 ⁇ , for example approximately 1,500 nm, or a few nm in the case of nanostructured gas-sensitive layer 16.
- FIG. 2 shows a further embodiment, in which thermistor structures 7, 11, which are covered by the second insulation layer 6, are applied to the first insulation layer 4 laterally on the outside left and right. Between Four parallel second electrode structures 14, 24, 26, 15 are applied to the heating conductor structures 7, 1 i on the first insulation layer 4 and are each covered on their upper side by the second insulation layer 6. Four parallel first electrode structures 12, 20, 22, 13 are applied to the second insulation layer 6 each above a second electrode structure. In the second insulation layer 6, a recess 33 is formed in each of the second insulation layer 6 between two adjacent second electrode structures and filled with the gas-sensitive layer 16, so that each first and second electrode structure adjoins the gas-sensitive layer 16.
- FIG. 3 is modified compared to the embodiment of FIG. 2 in that a second electrode structure 28 extending in the lateral direction below the four first electrode structures is provided in the second insulation layer 6.
- an upper insulation layer 10 is applied to the second insulation layer 6, in which laterally heating conductor structures 31 and 32 are formed above the heating conductor structures 7, 11.
- the upper insulation layer 10 adjoins the laterally outer first electrode structures 12 and 13, all first and second electrode structures adjoining the gas-sensitive layer 16.
- a third electrode 30 is provided in the first insulation layer 4, which extends in the lateral direction over at least the first and second electrode structures and does not adjoin the gas-sensitive layer 16.
- the sensor arrangements shown in the figures can be evaluated resistively by means of a constant voltage source or by means of an alternating voltage source by capacitive measurement or measurement of the impedance.
- a voltage can be applied between the first and the second electrode structures, between them in the vertical direction only a small distance d is formed, so that only a few or only a single crystallite of the material of the gas-sensitive layer 16 is arranged between the electrodes.
- the surface of the transition between the first and second electrode structures is higher than in the embodiment of FIG. 1, so that a larger signal can be obtained.
- a lateral measurement of the ohmic resistance, the capacitance and / or impedance between the laterally spaced first electrode structures and / or between the laterally spaced second electrode structures is possible.
- a measurement is carried out directly between the first electrode structures 12 and 13; in the embodiments of FIGS. 2 to 4, resistive four-point measurements can be carried out between the four laterally spaced electrode structures, in which a voltage between the laterally outer electrode structures 12 and 13 or 14 and 15 applied and the voltage drop across the middle electrode structures 20 and 22 or 24 and 26 is measured.
- the third electrode layer or electrode structure 30 shown in the embodiment in FIG. 4 can accordingly also be provided in the embodiments in FIGS. 1 to 3.
- an electrical field can be coupled into the gas-sensitive layer 16, whereby the sensor effects in resistive, capacitive measurement or impedance measurement in vertical or lateral measurement are targeted can be influenced.
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Biochemistry (AREA)
- Electrochemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Measuring Oxygen Concentration In Cells (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/514,211 US20050199041A1 (en) | 2002-05-11 | 2002-11-14 | Sensor assembly for measuring a gas concentration |
EP02779214A EP1504253A2 (de) | 2002-05-11 | 2002-11-14 | Sensoranordnung zum messen einer gaskonzentration |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10221084A DE10221084A1 (de) | 2002-05-11 | 2002-05-11 | Sensoranordnung zum Messen einer Gaskonzentration |
DE10221084.5 | 2002-05-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003095999A2 true WO2003095999A2 (de) | 2003-11-20 |
WO2003095999A3 WO2003095999A3 (de) | 2004-03-04 |
Family
ID=29265242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/004207 WO2003095999A2 (de) | 2002-05-11 | 2002-11-14 | Sensoranordnung zum messen einer gaskonzentration |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050199041A1 (de) |
EP (1) | EP1504253A2 (de) |
DE (1) | DE10221084A1 (de) |
WO (1) | WO2003095999A2 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005012893A1 (de) * | 2003-07-25 | 2005-02-10 | Paragon Ag | Mikrostrukturierter chemischer sensor |
WO2005050174A1 (de) * | 2003-11-18 | 2005-06-02 | Robert Bosch Gmbh | Sensor zum erfassen von partikeln in einem gasstrom, sowie verfahren zu seiner herstellung |
Families Citing this family (26)
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GB0500393D0 (en) * | 2005-01-10 | 2005-02-16 | Univ Warwick | Microheaters |
WO2008033419A2 (en) * | 2006-09-14 | 2008-03-20 | Agency For Science, Technology And Research | Electrochemical sensor with interdigitated microelectrodes and conducted polymer |
US20180080891A1 (en) * | 2016-09-21 | 2018-03-22 | General Electric Company | Systems and methods for environment sensing |
US20080154432A1 (en) * | 2006-12-20 | 2008-06-26 | Galloway Douglas B | Catalytic alloy hydrogen sensor apparatus and process |
US20080154434A1 (en) * | 2006-12-20 | 2008-06-26 | Galloway Douglas B | Catalytic Alloy Hydrogen Sensor Apparatus and Process |
KR20090064693A (ko) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | 마이크로 가스 센서 및 그 제작 방법 |
KR101094870B1 (ko) * | 2008-12-17 | 2011-12-15 | 한국전자통신연구원 | 습도 센서 및 이의 제조 방법 |
JP5055349B2 (ja) * | 2009-12-28 | 2012-10-24 | 日立オートモティブシステムズ株式会社 | 熱式ガスセンサ |
US8410560B2 (en) * | 2010-01-21 | 2013-04-02 | Cambridge Cmos Sensors Ltd. | Electromigration reduction in micro-hotplates |
EP2762865A1 (de) * | 2013-01-31 | 2014-08-06 | Sensirion Holding AG | Chemische Sensor und Verfahren zur Herstellung solch eines chemischen Sensors |
EP2833128A1 (de) * | 2013-07-30 | 2015-02-04 | Sensirion AG | Integrierter chemischer Metalloxidsensor |
KR101649586B1 (ko) | 2014-04-07 | 2016-08-19 | 주식회사 모다이노칩 | 센서 |
US10578572B2 (en) | 2016-01-19 | 2020-03-03 | Invensense, Inc. | CMOS integrated microheater for a gas sensor device |
US10383967B2 (en) | 2016-11-30 | 2019-08-20 | Invensense, Inc. | Substance sensing with tracers |
TWI626627B (zh) * | 2017-08-31 | 2018-06-11 | 研能科技股份有限公司 | 致動傳感模組 |
US11674916B2 (en) | 2018-11-12 | 2023-06-13 | Sciosense B.V. | Gas sensor |
US20200150069A1 (en) * | 2018-11-12 | 2020-05-14 | Ams Sensors Uk Limited | Gas sensor |
US11932080B2 (en) | 2020-08-20 | 2024-03-19 | Denso International America, Inc. | Diagnostic and recirculation control systems and methods |
US11760169B2 (en) | 2020-08-20 | 2023-09-19 | Denso International America, Inc. | Particulate control systems and methods for olfaction sensors |
US11813926B2 (en) | 2020-08-20 | 2023-11-14 | Denso International America, Inc. | Binding agent and olfaction sensor |
US11636870B2 (en) | 2020-08-20 | 2023-04-25 | Denso International America, Inc. | Smoking cessation systems and methods |
US12017506B2 (en) | 2020-08-20 | 2024-06-25 | Denso International America, Inc. | Passenger cabin air control systems and methods |
US11760170B2 (en) | 2020-08-20 | 2023-09-19 | Denso International America, Inc. | Olfaction sensor preservation systems and methods |
US11881093B2 (en) | 2020-08-20 | 2024-01-23 | Denso International America, Inc. | Systems and methods for identifying smoking in vehicles |
US11828210B2 (en) | 2020-08-20 | 2023-11-28 | Denso International America, Inc. | Diagnostic systems and methods of vehicles using olfaction |
DE102022211374A1 (de) | 2022-10-26 | 2024-05-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verbesserte Sensoranordnung basierend auf einerMetalloxid-Sensormaterialstruktuktur |
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US4953387A (en) * | 1989-07-31 | 1990-09-04 | The Regents Of The University Of Michigan | Ultrathin-film gas detector |
US5545300A (en) * | 1993-12-04 | 1996-08-13 | Goldstar Co., Ltd. | Low power consumption type thin film gas sensor |
DE19544303A1 (de) * | 1994-11-29 | 1997-06-05 | Martin Hausner | Vorrichtung und Verfahren zur Steuerung der Selektivität von gassensitiven chemischen Verbindungen über exteren Potentiale |
WO2001002844A1 (fr) * | 1999-07-02 | 2001-01-11 | Microchemical Systems S.A. | Capteur chimique de gaz a oxide metallique et son procede de fabrication |
US20020017126A1 (en) * | 1999-01-15 | 2002-02-14 | Dimeo Frank | Micro-machined thin film sensor arrays for the detection of H2, NH3, and sulfur containing gases, and method of making and using the same |
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JP2542643B2 (ja) * | 1987-10-31 | 1996-10-09 | 株式会社東芝 | センサの製造方法 |
GB9316280D0 (en) * | 1993-08-05 | 1993-09-22 | Capteur Sensors & Analysers | Gas sensors |
DE4433102A1 (de) * | 1994-09-16 | 1996-03-21 | Fraunhofer Ges Forschung | Elektrodenanordnung zur Signalerfassung gassensitiver Schichten |
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EP0795625A1 (de) * | 1996-03-11 | 1997-09-17 | Tokyo Gas Co., Ltd. | Verfahren zur Abscheidung einer dünnen Schicht sowie Gassensor hergestellt nach dem Verfahren |
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2002
- 2002-05-11 DE DE10221084A patent/DE10221084A1/de not_active Withdrawn
- 2002-11-14 WO PCT/DE2002/004207 patent/WO2003095999A2/de not_active Application Discontinuation
- 2002-11-14 EP EP02779214A patent/EP1504253A2/de not_active Withdrawn
- 2002-11-14 US US10/514,211 patent/US20050199041A1/en not_active Abandoned
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US5545300A (en) * | 1993-12-04 | 1996-08-13 | Goldstar Co., Ltd. | Low power consumption type thin film gas sensor |
DE19544303A1 (de) * | 1994-11-29 | 1997-06-05 | Martin Hausner | Vorrichtung und Verfahren zur Steuerung der Selektivität von gassensitiven chemischen Verbindungen über exteren Potentiale |
US20020017126A1 (en) * | 1999-01-15 | 2002-02-14 | Dimeo Frank | Micro-machined thin film sensor arrays for the detection of H2, NH3, and sulfur containing gases, and method of making and using the same |
WO2001002844A1 (fr) * | 1999-07-02 | 2001-01-11 | Microchemical Systems S.A. | Capteur chimique de gaz a oxide metallique et son procede de fabrication |
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STORM U ET AL: "A resistive gas sensor with elimination and utilization of parasitic electric fields" SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, Bd. 77, Nr. 1-2, 15. Juni 2001 (2001-06-15), Seiten 529-533, XP004246604 ISSN: 0925-4005 * |
ZACHEJA J ET AL: "Multi-electrode substrate for selectivity enhancement in air monitoring" SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, Bd. 43, Nr. 1-3, 1. September 1997 (1997-09-01), Seiten 11-17, XP004103423 ISSN: 0925-4005 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005012893A1 (de) * | 2003-07-25 | 2005-02-10 | Paragon Ag | Mikrostrukturierter chemischer sensor |
WO2005050174A1 (de) * | 2003-11-18 | 2005-06-02 | Robert Bosch Gmbh | Sensor zum erfassen von partikeln in einem gasstrom, sowie verfahren zu seiner herstellung |
US7574895B2 (en) | 2003-11-18 | 2009-08-18 | Robert Bosch Gmbh | Sensor for detecting particles in a gas stream and method for its manufacture |
Also Published As
Publication number | Publication date |
---|---|
WO2003095999A3 (de) | 2004-03-04 |
EP1504253A2 (de) | 2005-02-09 |
US20050199041A1 (en) | 2005-09-15 |
DE10221084A1 (de) | 2003-11-20 |
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