WO2003077303A1 - Procede de traitement par plasma, methode de detection de fin de stabilisation et dispositif de traitement par plasma - Google Patents
Procede de traitement par plasma, methode de detection de fin de stabilisation et dispositif de traitement par plasma Download PDFInfo
- Publication number
- WO2003077303A1 WO2003077303A1 PCT/JP2003/002932 JP0302932W WO03077303A1 WO 2003077303 A1 WO2003077303 A1 WO 2003077303A1 JP 0302932 W JP0302932 W JP 0302932W WO 03077303 A1 WO03077303 A1 WO 03077303A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- seasoning
- processing container
- measurement data
- processing
- plasma processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 141
- 235000011194 food seasoning agent Nutrition 0.000 title claims abstract description 85
- 238000003672 processing method Methods 0.000 title claims abstract description 24
- 238000001514 detection method Methods 0.000 title description 5
- 238000005259 measurement Methods 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000000491 multivariate analysis Methods 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000012360 testing method Methods 0.000 claims description 28
- 238000000513 principal component analysis Methods 0.000 claims description 20
- 238000000295 emission spectrum Methods 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 abstract description 54
- 238000004458 analytical method Methods 0.000 abstract description 19
- 239000007789 gas Substances 0.000 description 43
- 238000005530 etching Methods 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 11
- 238000007405 data analysis Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 238000005070 sampling Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Definitions
- a processing apparatus such as an etching processing apparatus includes a processing container having an airtight structure, and a holding member disposed in the processing container and holding a processing object, and generates plasma in the processing container to perform processing. It is configured to perform predetermined processing on the body. If the processing of the object to be processed is continued, the inside of the processing container is contaminated with by-products and the like, and internal components are consumed. For this reason, the processing equipment is temporarily stopped, and maintenance such as cleaning of the processing container and replacement of consumables is performed. Then, after the maintenance is completed, the processing device is restarted.
- etching processing apparatus when restarting, a predetermined number of dummy wafers are supplied into the processing container and the etching cycle is repeated to perform so-called seasoning in which the processing container is adjusted to a state required for production. After the seasoning, the etching rate and the uniformity of the etching in the wafer surface are examined. Data analysis is performed using measurement data obtained from a plurality of dummy wafers during seasoning, for example, measurement data of the emission spectrum obtained by an end point detector. Then, it is determined whether or not the seasoning has ended by observing the change in the analysis data.
- the present invention has been made to solve the above problems, and has as its object to provide a plasma processing method and a plasma processing apparatus and a plasma processing apparatus capable of clearly determining the end of seasoning. .
- the plasma processing method according to claim 5 of the present invention is the plasma processing method according to claim 1 or 2, wherein the high-frequency voltage obtained by the electric measurement device is used as the measurement data. Is used.
- FIG. 1 is a configuration diagram showing an example of a plasma processing apparatus to which a seasoning data analysis method, a plasma processing method, and a seasoning end detection method of the present invention are applied.
- FIG. 4 is a graph showing a contribution ratio of measured data of a light emission spectrum used in still another embodiment of the present invention to a residual.
- FIGS. 6A and 6B are diagrams showing analysis results obtained using the wavelengths shown in FIG. 4, and are graphs corresponding to FIGS. 2A and 2B, respectively.
- FIGS. 9A and 9B show other analysis results obtained by the conventional analysis method. Each of the results when using the 121st to 130th dummy wafers on the first day of seasoning is shown in FIG. A, a graph corresponding to Figure 2B.
- a large number of holes 5B are formed on the lower surface of the upper electrode 5 so as to be evenly dispersed, and the processing gas is uniformly distributed and supplied into the processing vessel 2 from each hole 5B. Accordingly, while the inside of the processing vessel 2 is evacuated by the exhaust device 11 and a predetermined etching gas is supplied at a predetermined flow rate from the processing gas supply source 12, the lower electrode 3 and the upper electrode 5 are each raised in height. A frequency power is applied to generate plasma of an etching gas in the processing container 2, and a predetermined etching is performed on the wafer W on the lower electrode 3. A temperature sensor (not shown) is mounted on the lower electrode 3, and the temperature of the wafer W on the lower electrode 3 is constantly monitored via the temperature sensor.
- FIGS. 3A and 3B are views showing a data analysis method according to another embodiment of the present invention.
- an average value of 18 pieces of measurement data (297 wavelengths) obtained for each dummy wafer W is obtained, and the main component is calculated using these average values.
- An analysis was performed to determine eigenvalues and eigenvectors.
- the plots of the sum of squares of the principal component scores and the sum of squares of the residuals of each dummy wafer W are shown in FIGS. 3A and 3B.
- the end of the seasoning can be determined similarly to the graphs of the above-described embodiment shown in FIGS. 2A and 2B.
- the values on the horizontal axis indicate the number of dummy wafers.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2003221362A AU2003221362A1 (en) | 2002-03-12 | 2003-03-12 | Plasma processing method, seasoning end detection method, and plasma processing device |
| US10/937,905 US7313451B2 (en) | 2002-03-12 | 2004-09-10 | Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002-66369 | 2002-03-12 | ||
| JP2002066369A JP4173311B2 (ja) | 2002-03-12 | 2002-03-12 | シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/937,905 Continuation-In-Part US7313451B2 (en) | 2002-03-12 | 2004-09-10 | Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003077303A1 true WO2003077303A1 (fr) | 2003-09-18 |
Family
ID=27800250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2003/002932 WO2003077303A1 (fr) | 2002-03-12 | 2003-03-12 | Procede de traitement par plasma, methode de detection de fin de stabilisation et dispositif de traitement par plasma |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4173311B2 (enrdf_load_stackoverflow) |
| CN (1) | CN100355040C (enrdf_load_stackoverflow) |
| AU (1) | AU2003221362A1 (enrdf_load_stackoverflow) |
| TW (1) | TW200421411A (enrdf_load_stackoverflow) |
| WO (1) | WO2003077303A1 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7313451B2 (en) | 2002-03-12 | 2007-12-25 | Tokyo Electron Limited | Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium |
| US7393459B2 (en) * | 2004-08-06 | 2008-07-01 | Applied Materials, Inc. | Method for automatic determination of substrates states in plasma processing chambers |
| US20230315047A1 (en) * | 2022-03-31 | 2023-10-05 | Tokyo Electron Limited | Virtual metrology model based seasoning optimization |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100557673B1 (ko) * | 2003-12-22 | 2006-03-06 | 어댑티브프라즈마테크놀로지 주식회사 | 플라즈마 장비를 시즌닝하는 방법 |
| JP4640828B2 (ja) * | 2006-03-17 | 2011-03-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN102315112B (zh) * | 2011-09-28 | 2016-03-09 | 上海华虹宏力半导体制造有限公司 | 堆栈金属栅极的刻蚀方法 |
| US10896833B2 (en) * | 2018-05-09 | 2021-01-19 | Applied Materials, Inc. | Methods and apparatus for detecting an endpoint of a seasoning process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1131599A (ja) * | 1997-07-08 | 1999-02-02 | Sumitomo Metal Ind Ltd | プラズマ処理装置における予熱方法及びプラズマ処理装置 |
| EP1089146A2 (en) * | 1999-07-07 | 2001-04-04 | Applied Materials, Inc. | Method and apparatus for monitoring a process by employing principal component analysis |
| JP2002025981A (ja) * | 2000-07-04 | 2002-01-25 | Tokyo Electron Ltd | 運転状態の監視方法及び処理装置の評価方法 |
-
2002
- 2002-03-12 JP JP2002066369A patent/JP4173311B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-12 CN CNB038058618A patent/CN100355040C/zh not_active Expired - Fee Related
- 2003-03-12 WO PCT/JP2003/002932 patent/WO2003077303A1/ja active Application Filing
- 2003-03-12 TW TW92105530A patent/TW200421411A/zh not_active IP Right Cessation
- 2003-03-12 AU AU2003221362A patent/AU2003221362A1/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1131599A (ja) * | 1997-07-08 | 1999-02-02 | Sumitomo Metal Ind Ltd | プラズマ処理装置における予熱方法及びプラズマ処理装置 |
| EP1089146A2 (en) * | 1999-07-07 | 2001-04-04 | Applied Materials, Inc. | Method and apparatus for monitoring a process by employing principal component analysis |
| JP2002025981A (ja) * | 2000-07-04 | 2002-01-25 | Tokyo Electron Ltd | 運転状態の監視方法及び処理装置の評価方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7313451B2 (en) | 2002-03-12 | 2007-12-25 | Tokyo Electron Limited | Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium |
| US7393459B2 (en) * | 2004-08-06 | 2008-07-01 | Applied Materials, Inc. | Method for automatic determination of substrates states in plasma processing chambers |
| US20230315047A1 (en) * | 2022-03-31 | 2023-10-05 | Tokyo Electron Limited | Virtual metrology model based seasoning optimization |
| US12032355B2 (en) * | 2022-03-31 | 2024-07-09 | Tokyo Electron Limited | Virtual metrology model based seasoning optimization |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200421411A (en) | 2004-10-16 |
| CN100355040C (zh) | 2007-12-12 |
| CN1643664A (zh) | 2005-07-20 |
| TWI297904B (enrdf_load_stackoverflow) | 2008-06-11 |
| AU2003221362A1 (en) | 2003-09-22 |
| JP2003264179A (ja) | 2003-09-19 |
| JP4173311B2 (ja) | 2008-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4317701B2 (ja) | 処理結果の予測方法及び予測装置 | |
| JP4464276B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| KR100612736B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
| CN100552889C (zh) | 等离子体处理装置 | |
| CN109075066A (zh) | 使用无晶片干式清洗发射光谱来控制干式蚀刻过程特征 | |
| JP2004349419A (ja) | プラズマ処理装置の異常原因判定方法及び異常原因判定装置 | |
| US20210375602A1 (en) | Plasma processing method and plasma processing apparatus | |
| JP2004335841A (ja) | プラズマ処理装置の予測装置及び予測方法 | |
| JP3905466B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| JP2020513647A (ja) | 製造プロセスにおける粒子によって誘発されるアークの検出のための組成発光分光分析 | |
| WO2003098677A1 (fr) | Procede de prediction d'etat de dispositif de traitement ou de resultat de traitement | |
| JP2024178337A (ja) | その場でのリアルタイムのプラズマチャンバ条件監視 | |
| JP2004039952A (ja) | プラズマ処理装置の監視方法およびプラズマ処理装置 | |
| JP4224454B2 (ja) | 処理装置の多変量解析モデル式作成方法，処理装置用の多変量解析方法，処理装置の制御装置，処理装置の制御システム | |
| WO2003077303A1 (fr) | Procede de traitement par plasma, methode de detection de fin de stabilisation et dispositif de traitement par plasma | |
| KR20070020226A (ko) | Ｖ-ｉ프로브 진단을 이용한 플라즈마 에칭 종료점 검출방법 | |
| JP4220378B2 (ja) | 処理結果の予測方法および処理装置 | |
| JP4675266B2 (ja) | 基板処理装置の処理結果の予測方法及び予測装置 | |
| US7313451B2 (en) | Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium | |
| JP2004039805A (ja) | プロセスの予測方法及び処理装置 | |
| JP3959318B2 (ja) | プラズマリーク監視方法，プラズマ処理装置，プラズマ処理方法，およびコンピュータプログラム | |
| KR20070069359A (ko) | 플라즈마 장치 및 이를 이용한 플라즈마 제어방법 | |
| US20210111008A1 (en) | Method of determining cleaning conditions and plasma processing device | |
| Miakonkikh et al. | Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection | |
| KR20090116391A (ko) | 플라즈마 검사 방법 및 이를 수행하기 위한 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| WWE | Wipo information: entry into national phase |
Ref document number: 10937905 Country of ref document: US |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 20038058618 Country of ref document: CN |
|
| 122 | Ep: pct application non-entry in european phase |