JP4173311B2 - シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置 - Google Patents

シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置 Download PDF

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Publication number
JP4173311B2
JP4173311B2 JP2002066369A JP2002066369A JP4173311B2 JP 4173311 B2 JP4173311 B2 JP 4173311B2 JP 2002066369 A JP2002066369 A JP 2002066369A JP 2002066369 A JP2002066369 A JP 2002066369A JP 4173311 B2 JP4173311 B2 JP 4173311B2
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JP
Japan
Prior art keywords
seasoning
processing
measurement data
test object
plasma
Prior art date
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Expired - Fee Related
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JP2002066369A
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English (en)
Japanese (ja)
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JP2003264179A5 (enrdf_load_stackoverflow
JP2003264179A (ja
Inventor
直樹 高山
斌 王
智 原田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Priority to JP2002066369A priority Critical patent/JP4173311B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW92105530A priority patent/TW200421411A/zh
Priority to CNB038058618A priority patent/CN100355040C/zh
Priority to AU2003221362A priority patent/AU2003221362A1/en
Priority to PCT/JP2003/002932 priority patent/WO2003077303A1/ja
Publication of JP2003264179A publication Critical patent/JP2003264179A/ja
Priority to US10/937,905 priority patent/US7313451B2/en
Publication of JP2003264179A5 publication Critical patent/JP2003264179A5/ja
Application granted granted Critical
Publication of JP4173311B2 publication Critical patent/JP4173311B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2002066369A 2002-03-12 2002-03-12 シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置 Expired - Fee Related JP4173311B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002066369A JP4173311B2 (ja) 2002-03-12 2002-03-12 シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置
CNB038058618A CN100355040C (zh) 2002-03-12 2003-03-12 等离子体处理方法和老化结束检测方法以及等离子体处理装置
AU2003221362A AU2003221362A1 (en) 2002-03-12 2003-03-12 Plasma processing method, seasoning end detection method, and plasma processing device
PCT/JP2003/002932 WO2003077303A1 (fr) 2002-03-12 2003-03-12 Procede de traitement par plasma, methode de detection de fin de stabilisation et dispositif de traitement par plasma
TW92105530A TW200421411A (en) 2002-03-12 2003-03-12 Plasma processing method, seasoning end detection method, and plasma processing device
US10/937,905 US7313451B2 (en) 2002-03-12 2004-09-10 Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002066369A JP4173311B2 (ja) 2002-03-12 2002-03-12 シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2003264179A JP2003264179A (ja) 2003-09-19
JP2003264179A5 JP2003264179A5 (enrdf_load_stackoverflow) 2005-09-08
JP4173311B2 true JP4173311B2 (ja) 2008-10-29

Family

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Family Applications (1)

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JP2002066369A Expired - Fee Related JP4173311B2 (ja) 2002-03-12 2002-03-12 シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置

Country Status (5)

Country Link
JP (1) JP4173311B2 (enrdf_load_stackoverflow)
CN (1) CN100355040C (enrdf_load_stackoverflow)
AU (1) AU2003221362A1 (enrdf_load_stackoverflow)
TW (1) TW200421411A (enrdf_load_stackoverflow)
WO (1) WO2003077303A1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7313451B2 (en) 2002-03-12 2007-12-25 Tokyo Electron Limited Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium
KR100557673B1 (ko) * 2003-12-22 2006-03-06 어댑티브프라즈마테크놀로지 주식회사 플라즈마 장비를 시즌닝하는 방법
US7393459B2 (en) * 2004-08-06 2008-07-01 Applied Materials, Inc. Method for automatic determination of substrates states in plasma processing chambers
JP4640828B2 (ja) * 2006-03-17 2011-03-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN102315112B (zh) * 2011-09-28 2016-03-09 上海华虹宏力半导体制造有限公司 堆栈金属栅极的刻蚀方法
US10896833B2 (en) * 2018-05-09 2021-01-19 Applied Materials, Inc. Methods and apparatus for detecting an endpoint of a seasoning process
US12032355B2 (en) * 2022-03-31 2024-07-09 Tokyo Electron Limited Virtual metrology model based seasoning optimization

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置
US6368975B1 (en) * 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis
JP4570736B2 (ja) * 2000-07-04 2010-10-27 東京エレクトロン株式会社 運転状態の監視方法

Also Published As

Publication number Publication date
TWI297904B (enrdf_load_stackoverflow) 2008-06-11
TW200421411A (en) 2004-10-16
CN1643664A (zh) 2005-07-20
WO2003077303A1 (fr) 2003-09-18
JP2003264179A (ja) 2003-09-19
CN100355040C (zh) 2007-12-12
AU2003221362A1 (en) 2003-09-22

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