TW200421411A - Plasma processing method, seasoning end detection method, and plasma processing device - Google Patents
Plasma processing method, seasoning end detection method, and plasma processing device Download PDFInfo
- Publication number
- TW200421411A TW200421411A TW92105530A TW92105530A TW200421411A TW 200421411 A TW200421411 A TW 200421411A TW 92105530 A TW92105530 A TW 92105530A TW 92105530 A TW92105530 A TW 92105530A TW 200421411 A TW200421411 A TW 200421411A
- Authority
- TW
- Taiwan
- Prior art keywords
- processing container
- measurement data
- aging
- processing
- aging treatment
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 144
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 235000011194 food seasoning agent Nutrition 0.000 title abstract 9
- 238000001514 detection method Methods 0.000 title description 6
- 238000005259 measurement Methods 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000000491 multivariate analysis Methods 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 230000032683 aging Effects 0.000 claims description 72
- 238000012360 testing method Methods 0.000 claims description 24
- 238000000513 principal component analysis Methods 0.000 claims description 20
- 238000000295 emission spectrum Methods 0.000 claims description 12
- 230000002431 foraging effect Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 abstract description 53
- 238000004458 analytical method Methods 0.000 abstract description 14
- 238000005530 etching Methods 0.000 description 24
- 238000007405 data analysis Methods 0.000 description 10
- 238000004088 simulation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 238000001748 luminescence spectrum Methods 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052704 radon Inorganic materials 0.000 description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007728 cost analysis Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002066369A JP4173311B2 (ja) | 2002-03-12 | 2002-03-12 | シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200421411A true TW200421411A (en) | 2004-10-16 |
| TWI297904B TWI297904B (enrdf_load_stackoverflow) | 2008-06-11 |
Family
ID=27800250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92105530A TW200421411A (en) | 2002-03-12 | 2003-03-12 | Plasma processing method, seasoning end detection method, and plasma processing device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4173311B2 (enrdf_load_stackoverflow) |
| CN (1) | CN100355040C (enrdf_load_stackoverflow) |
| AU (1) | AU2003221362A1 (enrdf_load_stackoverflow) |
| TW (1) | TW200421411A (enrdf_load_stackoverflow) |
| WO (1) | WO2003077303A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI834662B (zh) * | 2018-05-09 | 2024-03-11 | 美商應用材料股份有限公司 | 用於檢測陳化製程的終點的方法與設備 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7313451B2 (en) | 2002-03-12 | 2007-12-25 | Tokyo Electron Limited | Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium |
| KR100557673B1 (ko) * | 2003-12-22 | 2006-03-06 | 어댑티브프라즈마테크놀로지 주식회사 | 플라즈마 장비를 시즌닝하는 방법 |
| US7393459B2 (en) * | 2004-08-06 | 2008-07-01 | Applied Materials, Inc. | Method for automatic determination of substrates states in plasma processing chambers |
| JP4640828B2 (ja) * | 2006-03-17 | 2011-03-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN102315112B (zh) * | 2011-09-28 | 2016-03-09 | 上海华虹宏力半导体制造有限公司 | 堆栈金属栅极的刻蚀方法 |
| US12032355B2 (en) * | 2022-03-31 | 2024-07-09 | Tokyo Electron Limited | Virtual metrology model based seasoning optimization |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1131599A (ja) * | 1997-07-08 | 1999-02-02 | Sumitomo Metal Ind Ltd | プラズマ処理装置における予熱方法及びプラズマ処理装置 |
| US6368975B1 (en) * | 1999-07-07 | 2002-04-09 | Applied Materials, Inc. | Method and apparatus for monitoring a process by employing principal component analysis |
| JP4570736B2 (ja) * | 2000-07-04 | 2010-10-27 | 東京エレクトロン株式会社 | 運転状態の監視方法 |
-
2002
- 2002-03-12 JP JP2002066369A patent/JP4173311B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-12 WO PCT/JP2003/002932 patent/WO2003077303A1/ja active Application Filing
- 2003-03-12 CN CNB038058618A patent/CN100355040C/zh not_active Expired - Fee Related
- 2003-03-12 AU AU2003221362A patent/AU2003221362A1/en not_active Abandoned
- 2003-03-12 TW TW92105530A patent/TW200421411A/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI834662B (zh) * | 2018-05-09 | 2024-03-11 | 美商應用材料股份有限公司 | 用於檢測陳化製程的終點的方法與設備 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4173311B2 (ja) | 2008-10-29 |
| TWI297904B (enrdf_load_stackoverflow) | 2008-06-11 |
| CN1643664A (zh) | 2005-07-20 |
| WO2003077303A1 (fr) | 2003-09-18 |
| JP2003264179A (ja) | 2003-09-19 |
| CN100355040C (zh) | 2007-12-12 |
| AU2003221362A1 (en) | 2003-09-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |